Low noise amplifier module layout structure, design method and communication device

Abstract

This invention provides a low-noise amplifier module layout structure, design method, and communication device, relating to the field of layout technology. The low-noise amplifier module layout structure includes multiple low-noise amplifier regions, an output switch region, an analog and digital circuit region, and a low-frequency circuit region. The low-noise amplifier regions, analog and digital circuit regions, and low-frequency circuit regions surround the output switch region. The low-noise amplifiers in each low-noise amplifier region adopt the same topology. Each low-noise amplifier region is obtained by mirroring and / or rotating any other low-noise amplifier region. This invention sets the shape of each low-noise amplifier region as a topological structure that can be obtained by mirroring and / or rotating any other low-noise amplifier region. The low-noise amplifier regions, analog and digital circuit regions, and low-frequency circuit regions surround the output switch region, resulting in a more compact layout, reducing the size of the low-noise amplifier module layout structure, and lowering costs.

Description

Technical Field

[0001] This invention relates to the field of layout technology, and in particular to a low-noise amplifier module layout structure, design method, and communication device. Background Technology

[0002] A Low Noise Amplifier Bank (LNA Bank) is a highly integrated module in the RF front-end field. By integrating multiple low-noise amplifiers (LNAs) and RF switches, an LNA Bank achieves low-noise amplification and path switching of weak RF signals across multiple frequency bands. In 5G and multi-band communication systems, the LNA Bank effectively overcomes the signal-to-noise ratio degradation caused by poor antenna isolation or line loss by improving system sensitivity and selectivity, making it a key component for ensuring the performance of high-speed data transmission / reception links.

[0003] Before LNA Banks can be applied to 5G and multi-band communication systems, LNA Bank chips need to be manufactured on wafers using semiconductor processes. If the size of the LNA Bank chip is too large, it will lead to wasted wafer area and increased costs. Therefore, it is necessary to provide a low-noise amplifier module layout structure optimization scheme to reduce the size of the LNA Bank chip and reduce costs. Summary of the Invention

[0004] This invention provides a low-noise amplifier module layout structure, design method, and communication device to solve the defects of existing LNA Bank chips being too large, resulting in wasted wafer area and increased costs.

[0005] The present invention provides a low-noise amplifier module layout structure, including multiple low-noise amplifier regions, an output switch region, an analog and digital circuit region, and a low-frequency circuit region. The low-noise amplifier regions, the analog and digital circuit regions, and the low-frequency circuit region surround the output switch region. The low-noise amplifiers in each of the low-noise amplifier regions adopt the same topology. Each of the low-noise amplifier regions is obtained by mirroring and / or rotating any other low-noise amplifier region.

[0006] According to a low-noise amplifier module layout structure provided by the present invention, the output switch area is provided with a plurality of output switch pads, each of the output switch pads being connected to a low-noise amplifier in the low-noise amplifier area, the spacing between two adjacent output switch pads being constrained by the layout size of the output switch area, and the optimal connection between the output switch pads and the low-noise amplifier area being the objective.

[0007] According to a low-noise amplifier module layout structure provided by the present invention, one of the boundaries of each low-noise amplifier region is not a straight line, and the non-straight line boundaries of each low-noise amplifier region are staggered with the non-straight line boundaries of another low-noise amplifier region.

[0008] According to a low-noise amplifier module layout structure provided by the present invention, the non-linear boundary of each low-noise amplifier region is composed of a stepped structure formed by multiple broken lines, and the size of each step in the stepped structure is determined based on the size of the constituent components of the low-noise amplifier located at the non-linear boundary.

[0009] According to a low-noise amplifier module layout structure provided by the present invention, the non-linear boundary of each low-noise amplifier region is composed of multiple curves forming a wave structure, and each arc of the wave structure is determined based on the arc of the constituent components of the low-noise amplifier located at the non-linear boundary.

[0010] According to a low-noise amplifier module layout structure provided by the present invention, the plurality of low-noise amplifier regions include a first low-noise amplifier region, a second low-noise amplifier region, a third low-noise amplifier region, and a fourth low-noise amplifier region; the second low-noise amplifier region is obtained by mirroring and rotating the first low-noise amplifier region, the third low-noise amplifier region is obtained by mirroring the second low-noise amplifier region, and the fourth low-noise amplifier region is obtained by mirroring the first low-noise amplifier region; the non-linear boundaries of the first low-noise amplifier region and the second low-noise amplifier region are staggered, and the non-linear boundaries of the third low-noise amplifier region and the fourth low-noise amplifier region are staggered.

[0011] According to a low-noise amplifier module layout structure provided by the present invention, each low-noise amplifier region is provided with multiple input pads, drain inductors, source inductors, core circuitry of the low-noise amplifier, and logic control module; all the input pads are arranged at a preset spacing and deployed on the side of the low-noise amplifier region; the drain inductors and the source inductors are deployed in the low-noise amplifier region at positions other than the input pads; the core circuitry of the low-noise amplifier is deployed in the low-noise amplifier region based on the positions of the input pads, the drain inductors, and the source inductors; and the logic control module is deployed in the empty positions in the low-noise amplifier region other than the drain inductors and the source inductors.

[0012] According to a low-noise amplifier module layout structure provided by the present invention, the low-noise amplifier region is further provided with stacked transistor capacitors and parallel plate capacitors.

[0013] According to the low-noise amplifier module layout structure provided by the present invention, the frequency bands of the low-noise amplifiers arranged in each of the low-noise amplifier areas are all low-mid-high frequency bands.

[0014] The present invention also provides a method for designing a low-noise amplifier module layout structure, used to design the low-noise amplifier module layout structure described in any of the above claims, comprising: The dimensions, design rules, and constituent areas of the low-noise amplifier module layout structure are obtained. The constituent areas of the low-noise amplifier module layout structure include multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas. Based on the dimensions and design rules of the low-noise amplifier module layout structure, the dimensions and locations of multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas are determined. Based on the size of any low-noise amplifier region, determine the layout topology of a single low-noise amplifier, and then mirror and / or rotate the low-noise amplifier regions with determined layout topologies to determine the layout topologies of other low-noise amplifier regions. The design rules include the low-noise amplifier area, the analog and digital circuit area, and the low-frequency circuit area surrounding the output switch area.

[0015] According to a low-noise amplifier module layout design method provided by the present invention, determining the layout topology of a single low-noise amplifier based on the size of any low-noise amplifier region includes: Obtain the size and performance information of the constituent components of a single low-noise amplifier region, wherein the constituent components include multiple input pads, drain inductor, source inductor, core circuit of the low-noise amplifier, and logic control module; The dimensions of the low-noise amplifier region, along with the dimensions and performance information of each component, determine the deployment location of each component. All the input pads are arranged at a preset spacing on the side of the low-noise amplifier region; the drain inductor and the source inductor are arranged in the low-noise amplifier region in a position other than the input pads; the core circuit is arranged in a position other than the input pads, the drain inductor and the source inductor; and the logic control module is arranged in the empty position in the low-noise amplifier region in a position other than the drain inductor and the source inductor.

[0016] The present invention also provides a communication device comprising the low-noise amplifier module layout structure described in any of the preceding claims.

[0017] This invention provides a low-noise amplifier module layout structure, design method, and communication device. The low-noise amplifier module layout structure includes multiple low-noise amplifier regions, an output switch region, an analog and digital circuit region, and a low-frequency circuit region. The low-noise amplifier regions, analog and digital circuit regions, and low-frequency circuit regions surround the output switch region. The low-noise amplifiers in each low-noise amplifier region adopt the same topology. Each of the low-noise amplifier regions is obtained by mirroring and / or rotating any of the other low-noise amplifier regions. This invention sets the shape of each low-noise amplifier region to have the same topology, which can be obtained by mirroring and / or rotating any of the other low-noise amplifier regions. The low-noise amplifier regions, analog and digital circuit regions, and low-frequency circuit regions surround the output switch region, resulting in a more compact layout, reducing the size of the low-noise amplifier module layout structure, and lowering costs. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the layout structure of a low-noise amplifier module in the prior art.

[0020] Figure 2 This is a schematic diagram of the layout structure of the low-noise amplifier module provided by the present invention.

[0021] Figure 3 This is a flowchart illustrating the low-noise amplifier module layout structure design method provided by the present invention.

[0022] Figure 4 This is a schematic diagram of the pad layout provided by the present invention.

[0023] Figure 5 This is a schematic diagram of the layout of the drain inductor and source inductor provided by the present invention.

[0024] In the diagram, 1-Low noise amplifier area, 101-First low noise amplifier area, 102-Second low noise amplifier area, 103-Third low noise amplifier area, 104-Fourth low noise amplifier area, 2-Output switch area, 3-Analog and digital circuit area, 4-Low frequency circuit area. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0026] Figure 1 This is a schematic diagram of the layout structure of a low-noise amplifier module in the prior art, such as... Figure 1 As shown, existing low-noise amplifier module layouts typically do not differentiate between individual low-noise amplifiers during the design process. Instead, they uniformly arrange all components of the low-noise amplifiers according to their categories. For example, the drain inductors of multiple low-noise amplifiers are designed on the same horizontal line, resulting in a large size and high cost of the low-noise amplifier module layout.

[0027] Furthermore, existing low-noise amplifier modules typically employ low-noise amplifiers in different frequency bands, requiring separate design for each amplifier, which significantly reduces design efficiency. To address these shortcomings, this invention provides an optimized layout structure for a low-noise amplifier module. While meeting functional and performance requirements, it reduces the layout area and saves costs. The invention will be described in detail below with reference to the accompanying drawings.

[0028] Figure 2 This is a schematic diagram of the layout structure of the low-noise amplifier module provided by the present invention, as shown below. Figure 2 As shown, the present invention provides a low-noise amplifier module layout structure, including multiple low-noise amplifier regions 1, output switch regions 2, analog and digital circuit regions 3, and low-frequency circuit regions 4. The low-noise amplifier regions 1, the analog and digital circuit regions 3, and the low-frequency circuit regions 4 surround the output switch regions 2. The low-noise amplifiers in each of the low-noise amplifier regions 1 adopt the same topology. Each of the low-noise amplifier regions 1 is obtained by mirroring and / or rotating any other low-noise amplifier region 1.

[0029] Low-noise amplifier area 1 is used to deploy and package low-noise amplifiers. These amplifiers amplify the radio frequency (RF) signals received by the antenna with low noise, outputting the amplified RF signal to the output switch area 2. The output switch receives switch control commands transmitted from the analog and digital circuits deployed and packaged in analog and digital circuit area 3, and outputs the amplified RF signal with low noise. Low-frequency circuit area 4 is used to deploy and package low-frequency circuits. These circuits respond to the enable signals from the analog and digital circuits, providing DC voltage and current to the low-noise amplifier to ensure its normal operation.

[0030] In this invention, the low-noise amplifiers in low-noise amplifier region 1 adopt the same topology. One low-noise amplifier can be designed and deployed in low-noise amplifier region 1 first. Then, mirroring, rotation, and mirroring-rotation operations are performed on the designed low-noise amplifier region 1 to obtain other low-noise amplifier regions 1. Mirroring operations use the horizontal or vertical axis as the mirror axis. Rotation operations can rotate 90° clockwise or 90° counterclockwise. Mirroring and rotation operations can be performed first followed by rotation, or vice versa. When mirroring low-noise amplifier region 1, the low-noise amplifiers are also mirrored, resulting in a symmetrical state between the two low-noise amplifier regions 1 and their internal low-noise amplifiers. Similarly, when rotating low-noise amplifier region 1, the low-noise amplifiers also rotate. This invention requires only one low-noise amplifier region 1 to complete the design of all low-noise amplifier regions 1, reducing design difficulty and time, and improving design efficiency.

[0031] It should be noted that when all the low-noise amplifier regions 1 are combined, a first recess is formed near the center of the layout to accommodate the output switch region 2. The first recess can completely accommodate the output switch region 2 or accommodate a portion of the output switch region 2. When the first recess accommodates a portion of the output switch region 2, the area formed by the combination of the analog and digital circuit region 3 and the low-frequency circuit region 4 has a second recess near the center of the layout to accommodate the output switch region 2. The first recess and the second recess cooperate to surround the output switch region 2.

[0032] It is understood that the present invention sets the shape of each low-noise amplifier region to the same topology, which can be obtained by mirroring and / or rotating any of the other low-noise amplifier regions. The low-noise amplifier region, analog and digital circuit region and low-frequency circuit region surround the output switch region, making the layout more compact, reducing the size of the low-noise amplifier module layout structure and reducing costs.

[0033] As an optional embodiment, the output switch area 2 is provided with a plurality of output switch pads, each of the output switch pads being connected to a low noise amplifier in the low noise amplifier area 1. The spacing between two adjacent output switch pads is constrained by the layout size of the output switch area 2, and the goal is to optimize the connection between the output switch pads and the low noise amplifier area 1.

[0034] The output switch pads within output switch area 2 can be arranged in an array. The horizontal and vertical distances between the output switch pads are the same; furthermore, the horizontal and vertical distances can be the same. The layout dimensions of output switch area 2 serve as constraints, specifically meaning that the sum of the horizontal dimensions of all output switch pads and the horizontal distances between them cannot exceed the horizontal dimension of the layout of output switch area 2, and the sum of the vertical dimensions of all output switch pads and the vertical distances between them cannot exceed the vertical distance of the layout of output switch area 2. The optimal connection between the output switch pads and the low-noise amplifier area 1 is the objective, specifically meaning that the traces between each output switch pad and the low-noise amplifier are the shortest, of equal length, and impedance-matched.

[0035] It is understood that the present invention uses the layout size of the output switch area 2 as a constraint on the spacing between two adjacent output switch pads, and aims to optimize the connection between the output switch pads and the low noise amplifier area 1. This allows the layout space of the output switch area 2 to be planned with the minimum spacing while ensuring the performance of the low noise amplifier module.

[0036] As an optional embodiment, one of the boundaries of each of the low-noise amplifier regions 1 is not a straight line, and the non-straight line boundaries of each of the low-noise amplifier regions 1 are staggered with the non-straight line boundaries of the other low-noise amplifier region 1.

[0037] Specifically, another low-noise amplifier region 1, which is interleaved with any low-noise amplifier region 1, is obtained by mirroring and rotating the aforementioned low-noise amplifier region 1. The interleaving arrangement allows the low-noise amplifier regions to meet the nesting alignment requirements and saves space to the maximum extent. Furthermore, the nesting alignment requires that the interval at the boundary of each low-noise amplifier region is less than a preset threshold.

[0038] The size of the low-noise amplifier region 1 combined with the staggered low-noise amplifier regions 1 is determined based on the number of all low-noise amplifier regions 1 and the size of the low-noise amplifier module layout structure. The size of the analog and digital circuit region 3 and the size of the low-frequency circuit region 4 are both determined based on the size of the low-noise amplifier region 1 combined with the staggered low-noise amplifier regions 1. Specifically, the lateral dimension of the low-noise amplifier region 1 combined with the staggered low-noise amplifier regions 1 is half the lateral dimension of the low-noise amplifier module layout structure. The sum of the vertical dimension of the low-noise amplifier region 1 combined with the vertical dimension of the analog and digital circuit region 3 or the vertical dimension of the low-frequency circuit region 4 is equal to the vertical dimension of the low-noise amplifier module layout structure.

[0039] It is understood that one of the boundaries of each low-noise amplifier region in this invention is not a straight line, and the non-straight line boundaries of each low-noise amplifier region are staggered with the non-straight line boundaries of another low-noise amplifier region, so that the constituent components within the two low-noise amplifier regions 1 are staggered. Compared with the deployment method in the prior art, this can improve the layout area utilization. In addition, the embodiments of this invention also determine the size of the combination of low-noise amplifier regions 1 and staggered low-noise amplifier regions 1 based on the number of all low-noise amplifier regions 1 and the size of the low-noise amplifier module layout structure. Based on the size of the combination of low-noise amplifier regions 1 and staggered low-noise amplifier regions 1, the size of the analog and digital circuit region 3 and the size of the low-frequency circuit region 4 are determined, which can avoid wasting layout area.

[0040] As an optional embodiment, the non-linear boundary of each of the low-noise amplifier regions is composed of a stepped structure formed by multiple broken lines, wherein the size of each step in the stepped structure is determined based on the size of the constituent components of the low-noise amplifier located at the non-linear boundary.

[0041] Optionally, the stepped structure has three steps. The components of the low-noise amplifier include multiple input pads, drain inductors, source inductors, core circuits, and logic control modules. One step is a drain inductor design with a size larger than the drain inductor size, one step is a source inductor design with a size larger than the source inductor size, and one step is an input pad design with a size larger than the input pad size.

[0042] It is understood that the embodiments of the present invention design the non-linear boundary of each low-noise amplifier region as a stepped structure composed of multiple broken lines, which can facilitate the calculation of the size of the non-linear boundary of the low-noise amplifier region while improving the layout utilization rate and improving design efficiency.

[0043] As an optional embodiment, the non-linear boundary of each of the low-noise amplifier regions is composed of a wave structure formed by multiple curves, each arc of the wave structure being determined based on the arc of the constituent components of the low-noise amplifier located at the non-linear boundary.

[0044] Optionally, the low-noise amplifier comprises multiple input pads, a drain inductor, a source inductor, core circuitry, and a logic control module. The curvature of the wave structure is determined based on the diameter of the circumscribed circle of either the drain or source inductor. Specifically, the diameter of the wave structure's curvature is larger than the diameter of the circumscribed circle of either the drain or source inductor.

[0045] Optionally, the wave structure has three radii, where the diameters of two radii are determined based on the diameter of the drain inductor's circumscribed circle, and the diameter of the third radii is determined based on the diameter of the source inductor's circumscribed circle. Specifically, the diameters of two radii are larger than the diameter of the drain inductor's circumscribed circle, and the diameter of the third radii is larger than the diameter of the source inductor's circumscribed circle.

[0046] It is understood that, based on the curvature of the components of the low-noise amplifier located at non-linear boundaries, the embodiments of the present invention determine the wave structure formed by the non-linear boundaries of each low-noise amplifier region, which can further improve the layout utilization. As an optional embodiment, the plurality of low-noise amplifier regions 1 include a first low-noise amplifier region 101, a second low-noise amplifier region 102, a third low-noise amplifier region 103, and a fourth low-noise amplifier region 104; the second low-noise amplifier region 102 is obtained by mirroring and rotating the first low-noise amplifier region 101, the third low-noise amplifier region 103 is obtained by mirroring the second low-noise amplifier region 102, and the fourth low-noise amplifier region 104 is obtained by mirroring the first low-noise amplifier region 101; the non-linear boundaries of the first low-noise amplifier region 101 and the second low-noise amplifier region 102 are staggered, and the non-linear boundaries of the third low-noise amplifier region 103 and the fourth low-noise amplifier region 104 are staggered.

[0047] In this embodiment of the invention, the first low-noise amplifier region 101, the second low-noise amplifier region 102, the third low-noise amplifier region 103 and the fourth low-noise amplifier region 104 are arranged from left to right in the low-noise amplifier module layout structure, surrounding the output switch region.

[0048] It is understood that the embodiments of the present invention define the shape of the low noise amplifier region 1 and the positional relationship between each low noise amplifier region 1, so that the low noise amplifier region 1 can be reused and nested and aligned, thereby improving the layout utilization and design efficiency.

[0049] As an optional embodiment, the low-noise amplifiers in each of the low-noise amplifier regions 1 are configured in the low-mid-high frequency band.

[0050] Existing technologies typically employ a combination of low-to-mid-high frequency low-noise amplifiers and mid-to-high frequency low-noise amplifiers. For example... Figure 1The existing low-noise amplifier module shown uses a combination of two low-mid-high frequency band low-noise amplifiers and two mid-high frequency band low-noise amplifiers, requiring a total layout of four low-noise amplifiers. This not only increases the layout size but also reduces design efficiency. The embodiment of this invention sets the frequency band of the low-noise amplifiers in each of the low-noise amplifier regions 1 to the low-mid-high frequency band, requiring only a single low-noise amplifier layout. This improves design efficiency and facilitates nested alignment between the two low-noise amplifier regions.

[0051] The Low Mid-High Band Low Noise Amplifier (LMHB LNA) is a broadband low-noise amplifier covering low to mid-high frequencies (typically approximately 600MHz to 3GHz). It achieves flat gain across the frequency band through a broadband matching network (such as resistive feedback or a distributed structure) and uses inductor degradation technology to suppress noise. The Mid-High Band Low Noise Amplifier (MHB LNA) is a broadband low-noise amplifier covering mid-high frequencies (1.7GHz to 3GHz). By optimizing the input matching network and adopting a cascode structure, it achieves high gain while effectively suppressing the Miller effect at high frequencies.

[0052] In this embodiment of the invention, all low-noise amplifiers preferably operate in the low-to-mid-high frequency bands, which expands the applicable frequency bands. At the same time, it eliminates the need to design the layout of the low-noise amplifiers in the mid-to-high frequency bands, reducing design difficulty and time, and improving design efficiency.

[0053] As an optional embodiment, each of the low-noise amplifier regions 1 is provided with multiple input pads, drain inductors, source inductors, the core circuitry of the low-noise amplifier, and a logic control module; all the input pads are arranged at a preset spacing and deployed on the side of the low-noise amplifier region 1; the drain inductors and the source inductors are deployed in the low-noise amplifier region 1 in positions other than the input pads; the core circuitry of the low-noise amplifier is deployed in the low-noise amplifier region 1 based on the positions of the input pads, the drain inductors, and the source inductors; and the logic control module is deployed in the empty positions in the low-noise amplifier region 1 in addition to the drain inductors and the source inductors.

[0054] The layout design for the low-noise amplifier area 1 follows this sequence: first, the layout of the input pads; second, the layout of the drain and source inductors; third, the layout of the core circuitry of the low-noise amplifier; and fourth, the layout of the logic control module. It is important to note that the logic control module must not be placed below the drain and source inductors.

[0055] In this embodiment of the invention, the preset spacing of the input pads is set to 130um-140um, preferably 137-138um.

[0056] It is understood that the embodiments of the present invention propose a layout design concept for the low-noise amplifier region 1, and limit the positions of the input pads, drain inductors, source inductors, core circuitry of the low-noise amplifier, and logic control modules. This can reduce the layout area and save costs while ensuring functional and performance requirements. The layout width of the low-noise amplifier module provided by the present invention can be reduced to below 1000um. In one embodiment, the layout size of the low-noise amplifier module is 1395um × 990um.

[0057] As an optional embodiment, the low-noise amplifier region 1 is further provided with stacked transistor capacitors and parallel plate capacitors.

[0058] It is understood that the embodiments of the present invention use a stacked method of transistor capacitors (MOS capacitors) and parallel plate capacitors (MIM capacitors) to increase the capacitance value of the decoupling capacitor, which can reduce the design area required for the capacitor and reduce the design area of ​​the layout.

[0059] The layout design method of the low-noise amplifier module provided by the present invention is described below. The layout design method of the low-noise amplifier module described below can be referred to in correspondence with the layout structure of the low-noise amplifier module described above.

[0060] Figure 3 This is a flowchart illustrating the low-noise amplifier module layout structure design method provided by the present invention, as shown below. Figure 3 As shown, the present invention also provides a low-noise amplifier module layout structure design method for designing the low-noise amplifier module layout structure described in any of the above claims. The design method can be executed based on integrated circuit layout design software and may include steps S100-S300.

[0061] Step S100: Obtain the dimensions, design rules, and constituent areas of the low-noise amplifier module layout structure. The constituent areas of the low-noise amplifier module layout structure include multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas.

[0062] Optionally, integrated circuit layout design software can obtain the dimensions, design rules, and constituent areas of the low-noise amplifier module layout structure by parsing the layout data file.

[0063] Step S200: Based on the dimensions and design rules of the low-noise amplifier module layout structure, determine the dimensions and positions of multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas.

[0064] Step S300: Based on the size of any low-noise amplifier region, determine the layout topology of a single low-noise amplifier, and mirror and / or rotate the low-noise amplifier region with the determined layout topology to determine the layout topology of other low-noise amplifier regions.

[0065] The design rules include the low-noise amplifier region, the analog and digital circuit region, and the low-frequency circuit region surrounding the output switch region. Optionally, the design rules also include that one boundary of each of the low-noise amplifier regions is non-linear, and the non-linear boundaries of each low-noise amplifier region intersect with the non-linear boundaries of another low-noise amplifier region. This interspersed arrangement allows the low-noise amplifier regions to meet nesting alignment requirements and maximizes space saving.

[0066] The low-noise amplifier (LNO) area is used to deploy and package LNO amplifiers. These LNO amplifiers amplify the radio frequency (RF) signals received by the antenna with low noise, outputting the amplified RF signal to the output switch area. The output switch receives switching control commands transmitted from the analog and digital circuits deployed and packaged in the analog and digital circuit area, and outputs the amplified RF signal with low noise. The low-frequency circuit area is used to deploy and package low-frequency circuits. These low-frequency circuits respond to the enable signals from the analog and digital circuits, providing DC voltage and current to the LNO amplifier to ensure its normal operation.

[0067] The output switch area is located near the center of the low-noise amplifier module layout, and all low-noise amplifier areas, analog and digital circuit areas, and low-frequency circuit areas are arranged around the output switch area.

[0068] Based on the dimensions and design rules of the low-noise amplifier module layout, in determining the dimensions and positions of multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas, the deployment of a low-noise amplifier within the low-noise amplifier area is first designed. Then, mirroring, rotation, and a combination of mirroring and rotation operations are performed on the designed low-noise amplifier area to obtain the other low-noise amplifier areas. Mirroring operations use either the horizontal or vertical axis as the mirror axis. Rotation operations can rotate 90° clockwise or 90° counterclockwise. Mirroring and rotation operations can be performed either first followed by rotation, or vice versa.

[0069] After all the low-noise amplifier areas are combined, a first recess is formed near the center of the layout to accommodate the output switch area. The first recess can completely accommodate the output switch area or accommodate part of the output switch area. When the first recess accommodates part of the output switch area, the area formed by the combination of the analog and digital circuit areas and the low-frequency circuit area has a second recess near the center of the layout to accommodate the output switch area. The first recess and the second recess cooperate to surround the output switch area.

[0070] One boundary of each of the low-noise amplifier regions is non-linear, and the non-linear boundaries of each low-noise amplifier region intersect with the non-linear boundaries of another low-noise amplifier region. The lateral dimension of the combination of the low-noise amplifier regions and the interspersed low-noise amplifier regions is half the lateral dimension of the low-noise amplifier module layout structure. The sum of the longitudinal dimension of the combination of the low-noise amplifier regions and the interspersed low-noise amplifier regions and the longitudinal dimension of the analog and digital circuit regions or the longitudinal dimension of the low-frequency circuit regions is equal to the longitudinal dimension of the low-noise amplifier module layout structure, thus obtaining the position of each low-noise amplifier region, analog and digital circuit region, and low-frequency circuit region in the low-noise amplifier module layout structure.

[0071] It is understood that the present invention sets the shape of each low-noise amplifier area to be the same and symmetrically arranged with the adjacent low-noise amplifier areas, so that the low-noise amplifier area, analog and digital circuit area and low-frequency circuit area surround the output switch area, the layout is more compact, the size of the low-noise amplifier module layout structure can be reduced, and the cost can be reduced.

[0072] As an optional embodiment, determining the layout topology of a single low-noise amplifier based on the size of any low-noise amplifier region includes: Obtain the size and performance information of the constituent components of a single low-noise amplifier region, wherein the constituent components include multiple input pads, drain inductors, source inductors, the core circuit of the low-noise amplifier, and logic control modules; Based on the dimensions of the low-noise amplifier region and the dimensions and performance information of each component, the deployment location of each component is determined; The deployment order of the input pads is as follows: First, all input pads are arranged and deployed on the side of the low-noise amplifier area according to a preset spacing; Second, the deployment order of the drain inductor and the source inductor is as follows, deployed in the low-noise amplifier area in positions other than the input pads; Third, the deployment order of the core circuit is as follows, deployed in positions other than the input pads, the drain inductor, and the source inductor; Fourth, the deployment order of the logic control module is as follows, deployed in the empty positions in the low-noise amplifier area in positions other than the drain inductor and the source inductor.

[0073] The design steps for a single low-noise amplifier section are illustrated below with reference to the accompanying diagram: Step 1: Arrange all input pads at a preset spacing and deploy them on the side of the low-noise amplifier area.

[0074] The preset spacing of the input pads is set to 130um-140um, preferably 137-138um.

[0075] like Figure 4 As shown, the input pads of the four low-noise amplifiers are all deployed on the side of the low-noise amplifier module layout, and each low-noise amplifier has four input pads (IN PAD). Additionally, according to... Figure 4 The low-noise amplifier module layout shown has 8 pads in the analog and digital circuit area (including SCLK / SDATA / USID / VIO, etc.) and 5 pads in the low-frequency circuit area, all located on the side of the low-noise amplifier module layout.

[0076] Step 2: Deploy the drain inductor and source inductor in the low-noise amplifier region, except for the input pad.

[0077] The available area in the low-noise amplifier region, excluding the input pad area, is discretized into a grid, with each grid point representing a candidate inductor location. Based on the candidate inductor locations, the mutual capacitance and mutual inductance between the inductor and the input pad, between the inductor and ground, and between the inductors are calculated. The mutual capacitance and mutual inductance are substituted into a simplified LNA equivalent circuit model (such as the π model) to calculate the noise figure (NF) and gain (Gain) corresponding to the candidate inductor locations. The inductor location selection problem is transformed into a multi-objective optimization problem, with the objective function being to minimize NF and maximize Gain while satisfying the layout area constraint, thus obtaining the optimal inductor location.

[0078] like Figure 5 As shown, the drain inductor is located in the red box in the figure, and the source inductor is located in the blue box in the figure. This ensures optimal performance while improving layout utilization.

[0079] Step 3: Based on the location of the input pad, the location of the drain inductor, and the location of the source inductor, deploy the core circuit of the low-noise amplifier in the low-noise amplifier region.

[0080] After determining the location of the input pad, the location of the drain inductor, and the location of the source inductor, a location suitable for accommodating the core circuit of the low-noise amplifier is selected from the remaining available area of ​​the low-noise amplifier region, thus completing the deployment of the core circuit of the low-noise amplifier in the low-noise amplifier region.

[0081] Step 4: Deploy the logic control module in the empty space in the low-noise amplifier region, excluding the drain inductor and the source inductor.

[0082] After determining the location of the core circuit of the low-noise amplifier, the logic control module is deployed in the empty space in the low-noise amplifier area, excluding the drain inductor, the source inductor, and the core circuit of the low-noise amplifier.

[0083] The present invention also provides a communication device comprising the low-noise amplifier module layout structure described in any of the preceding claims.

[0084] It should be noted that the low-noise amplifier module layout structure design method and communication device provided by the present invention have the technical effects corresponding to the low-noise amplifier module layout structure, which will not be elaborated further.

[0085] It should be noted that in the description of the embodiments of the present invention, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The terms "upper," "lower," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Unless otherwise expressly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly, for example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two elements. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0086] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A low-noise amplifier module layout structure, characterized in that, It includes multiple low-noise amplifier regions, output switch regions, analog and digital circuit regions, and low-frequency circuit regions. The low-noise amplifier regions, the analog and digital circuit regions, and the low-frequency circuit regions surround the output switch region. The low-noise amplifiers in each of the low-noise amplifier regions adopt the same topology. Each of the low-noise amplifier regions is obtained by mirroring and / or rotating any other low-noise amplifier region.

2. The low noise amplifier module layout structure of claim 1, wherein, The output switch area is provided with multiple output switch pads. Each output switch pad is connected to a low noise amplifier in the low noise amplifier area. The spacing between two adjacent output switch pads is constrained by the layout size of the output switch area, and the goal is to optimize the connection between the output switch pad and the low noise amplifier area.

3. The low-noise amplifier module layout structure according to claim 1, characterized in that, One of the boundaries of each of the low-noise amplifier regions is not a straight line, and the non-straight line boundaries of each of the low-noise amplifier regions are staggered with the non-straight line boundaries of the other low-noise amplifier region.

4. The low-noise amplifier module layout structure according to claim 3, characterized in that, The non-linear boundary of each of the low-noise amplifier regions is composed of a stepped structure formed by multiple broken lines, and the size of each step in the stepped structure is determined based on the size of the constituent components of the low-noise amplifier located at the non-linear boundary.

5. The low-noise amplifier module layout structure according to claim 3, characterized in that, The non-linear boundary of each of the low-noise amplifier regions is composed of a wave structure formed by multiple curves, and each arc of the wave structure is determined based on the arc of the constituent components of the low-noise amplifier located at the non-linear boundary.

6. The low-noise amplifier module layout structure according to claim 3, characterized in that, The plurality of low-noise amplifier regions include a first low-noise amplifier region, a second low-noise amplifier region, a third low-noise amplifier region, and a fourth low-noise amplifier region; the second low-noise amplifier region is obtained by mirroring and rotating the first low-noise amplifier region, the third low-noise amplifier region is obtained by mirroring the second low-noise amplifier region, and the fourth low-noise amplifier region is obtained by mirroring the first low-noise amplifier region; the non-linear boundaries of the first low-noise amplifier region and the second low-noise amplifier region are staggered, and the non-linear boundaries of the third low-noise amplifier region and the fourth low-noise amplifier region are staggered.

7. The low-noise amplifier module layout structure according to any one of claims 1 to 6, characterized in that, Each of the aforementioned low-noise amplifier regions is provided with multiple input pads, drain inductors, source inductors, the core circuitry of the low-noise amplifier, and a logic control module. All the input pads are arranged at a preset spacing and deployed on the side of the low-noise amplifier region. The drain inductors and source inductors are deployed in the low-noise amplifier region in locations other than the input pads. The core circuitry of the low-noise amplifier is deployed in the low-noise amplifier region based on the positions of the input pads, the drain inductors, and the source inductors. The logic control module is deployed in the empty positions in the low-noise amplifier region in locations other than the drain inductors and source inductors.

8. The low-noise amplifier module layout structure according to claim 7, characterized in that, The low-noise amplifier area also includes stacked transistor capacitors and parallel plate capacitors.

9. The low-noise amplifier module layout structure according to claim 1, characterized in that, The low-noise amplifiers in each of the aforementioned low-noise amplifier zones are configured in the low-to-mid-high frequency band.

10. A method for designing the layout structure of a low-noise amplifier module, used to design the layout structure of the low-noise amplifier module as described in any one of claims 1 to 9, characterized in that, include: The dimensions, design rules, and constituent areas of the low-noise amplifier module layout structure are obtained. The constituent areas of the low-noise amplifier module layout structure include multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas. Based on the dimensions and design rules of the low-noise amplifier module layout structure, the dimensions and positions of multiple low-noise amplifier areas, output switch areas, analog and digital circuit areas, and low-frequency circuit areas are determined. Based on the size of any low-noise amplifier region, determine the layout topology of a single low-noise amplifier, and then mirror and / or rotate the low-noise amplifier regions with determined layout topologies to determine the layout topologies of other low-noise amplifier regions. The design rules include the low-noise amplifier area, the analog and digital circuit area, and the low-frequency circuit area surrounding the output switch area.

11. The low-noise amplifier module layout design method according to claim 10, characterized in that, The step of determining the layout topology of a single low-noise amplifier based on the size of any low-noise amplifier region includes: Obtain the size and performance information of the constituent components of a single low-noise amplifier region, wherein the constituent components include multiple input pads, drain inductor, source inductor, core circuit of the low-noise amplifier, and logic control module; Based on the dimensions of the low-noise amplifier region and the dimensions and performance information of each component, the deployment location of each component is determined; All the input pads are arranged at a preset spacing on the side of the low-noise amplifier region; the drain inductor and the source inductor are arranged in the low-noise amplifier region in a position other than the input pads; the core circuit is arranged in a position other than the input pads, the drain inductor and the source inductor; and the logic control module is arranged in the empty position in the low-noise amplifier region in a position other than the drain inductor and the source inductor.

12. A radio frequency module, characterized in that, Includes the low-noise amplifier module layout structure as described in any one of claims 1 to 9.

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