Method for controlling silicon negative electrode battery, silicon negative electrode battery, and electronic device

Abstract

The application provides a control method of a silicon negative electrode battery, the silicon negative electrode battery and an electronic device. The method comprises the following steps: determining a current silicon capacity in the silicon negative electrode battery; and in the case that the current silicon capacity meets a target repair condition, repairing silicon capacity loss in the silicon negative electrode battery by using a target pulse parameter, wherein the current silicon capacity represents reversible use capacity that can be contributed by a silicon component material in the silicon negative electrode battery, and the target pulse parameter is related to the current silicon capacity.

Description

Technical Field

[0001] This application relates to battery technology, and more particularly to a control method for a silicon anode battery, a silicon anode battery, and an electronic device. Background Technology

[0002] During the repeated charging and discharging of high-density silicon anode batteries, the chemical reaction mechanism of the internal silicon component materials is accompanied by huge volume expansion and contraction. This periodic and large-scale volume change process causes the binder that binds the silicon component materials to be continuously stretched. As the charging and discharging process continues, the binder gradually suffers irreversible damage and loses its adhesive effect, causing some silicon component materials to detach from the anode conductive network, thereby losing electrical contact with the conductive agent and current collector, forming "island active materials", that is, isolated silicon particles.

[0003] Although these isolated silicon particles retain their chemical properties, they can no longer participate in electrochemical reactions and therefore no longer contribute to capacity. This leads to a sharp decline in the reversible capacity of the battery and a shortened cycle life. Summary of the Invention

[0004] This application provides a control method for a silicon anode battery, a silicon anode battery, and an electronic device, which at least partially solve the above-mentioned problems.

[0005] The technical solution of this application embodiment is implemented as follows: In a first aspect, embodiments of this application provide a control method for a silicon anode battery, the method comprising: Determine the current silicon capacity in the silicon anode cell, which characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute. Given that the current silicon capacity meets the target repair conditions, the silicon capacity loss in the silicon anode cell is repaired using the target pulse parameters, which are related to the current silicon capacity.

[0006] Secondly, embodiments of this application provide a silicon anode battery, including a package shell, a cell structure disposed in the package shell, and a control chip. The control chip is configured to perform the following: determining the current silicon capacity in the silicon anode battery, whereby the silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode battery can contribute; and, if it is determined based on the current silicon capacity that a target repair condition is met, repairing the silicon capacity loss in the silicon anode battery using a target pulse parameter, wherein the target pulse parameter is related to the current silicon capacity.

[0007] Thirdly, embodiments of this application provide an electronic device, including: a body and a silicon anode battery disposed on the body, wherein the silicon anode battery includes a package shell, a cell structure disposed on the package shell, and a control chip, the control chip being configured to perform: determining the current silicon capacity in the silicon anode battery, the silicon capacity being a characterizing the reversible usable capacity that the silicon component material in the silicon anode battery can contribute; and, if it is determined based on the current silicon capacity that a target repair condition is met, repairing the silicon capacity loss in the silicon anode battery using a target pulse parameter, wherein the target pulse parameter is related to the current silicon capacity.

[0008] Fourthly, embodiments of this application provide a control device for a silicon anode battery, the device comprising: The determination module is used to determine the current silicon capacity in the silicon anode cell, which characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute. The repair module is used to repair the silicon capacity loss in the silicon anode cell by using target pulse parameters, provided that the current silicon capacity meets the target repair conditions. The target pulse parameters are related to the current silicon capacity.

[0009] This application provides a computer-readable storage medium storing a computer program or computer-executable instructions for implementing the control method for a silicon anode battery provided in this application when executed by a processor.

[0010] This application provides a computer program product, including a computer program or computer-executable instructions. When the computer program or computer-executable instructions are executed by a processor, they implement the control method for the silicon anode battery provided in this application.

[0011] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and are not intended to limit the technical solutions of this application. Attached Figure Description

[0012] Figure 1 A schematic diagram of the implementation process of a control method for a silicon anode battery provided in this application embodiment. Figure 1 ; Figure 2 A schematic diagram of the implementation process of a control method for a silicon anode battery provided in this application embodiment. Figure 2 ; Figure 3 A schematic diagram of the implementation process of a control method for a silicon anode battery provided in this application embodiment. Figure 3 ; Figure 4 This application provides a schematic diagram illustrating the structural changes of silicon particles during cyclic charging and discharging in a silicon anode battery. Figure 5A schematic diagram of a repair principle provided in an embodiment of this application; Figure 6 A schematic diagram of an exemplary repair method provided in this application embodiment; Figure 7 This is a schematic diagram of the composition structure of a control device for a silicon anode battery provided in an embodiment of this application; Figure 8 This is a schematic diagram of the hardware entity of an electronic device provided in an embodiment of this application. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application are further described in detail below with reference to the accompanying drawings and embodiments. The described embodiments should not be regarded as limitations on this application. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0014] In the following description, references to "some embodiments" refer to a subset of all possible embodiments. It is understood that "some embodiments" may be the same or different subsets of all possible embodiments and may be combined with each other without conflict. The terms "first / second / third" are used merely to distinguish similar objects and do not represent a specific ordering of objects. It is understood that "first / second / third" may be interchanged in a specific order or sequence where permitted, so that the embodiments of this application described herein can be implemented in an order other than that illustrated or described herein.

[0015] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terminology used herein is for descriptive purposes only and is not intended to limit the scope of this application.

[0016] High-density silicon anode battery design is a key technology for improving the energy density of lithium-ion batteries. However, during charging and discharging, the internal silicon components of silicon anode batteries undergo significant volume expansion, which can easily lead to binder failure and cause some silicon particles to become "isolated silicon particles" due to loss of electrical contact. These isolated silicon particles cannot participate in the reaction, resulting in a sharp capacity decay and severely hindering the practical application of silicon anode batteries.

[0017] Therefore, there is an urgent need for a control method that can repair silicon capacity loss.

[0018] In view of this, embodiments of this application provide a control method for a silicon anode battery, a silicon anode battery, and an electronic device. The control method for the silicon anode battery includes: determining the current silicon capacity in the silicon anode battery; and, when the current silicon capacity is determined to meet the target repair conditions, repairing the silicon capacity loss in the silicon anode battery using a target pulse parameter. The current silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode battery can contribute, and the target pulse parameter is related to the current silicon capacity.

[0019] In this way, by detecting the current silicon capacity, the health status of the battery can be accurately quantified. When the current silicon capacity meets the repair conditions, it is determined that the silicon anode battery needs to repair its silicon capacity loss. At this point, the most suitable target pulse parameters are dynamically calculated based on the current silicon capacity, and repair is performed based on the appropriate target pulse parameters. On the one hand, this achieves precise repair of the capacity decay of the silicon anode battery, ensuring that the repair energy is just right. This allows isolated silicon particles to contribute capacity again and restore conductivity, while avoiding poor repair results due to pulses that are too strong or too weak. On the other hand, timely intervention when the reversible usable capacity of the silicon anode battery decays significantly improves the retention rate and lifespan of the reversible usable capacity of the silicon anode battery, providing a reliable capacity repair guarantee for the large-scale application of silicon anode batteries.

[0020] This application provides a control method for a silicon anode battery. This method can be executed by an electronic device, which may be, but is not limited to, a server, laptop, tablet, desktop computer, smart TV, set-top box, mobile device (such as mobile phone, portable video player, personal digital assistant, dedicated messaging device, portable gaming device), or other device with data processing capabilities.

[0021] Figure 1 A schematic diagram of the implementation process of a control method for a silicon anode battery provided in this application embodiment. Figure 1 ,like Figure 1 As shown, the method includes the following steps S101 and S102: Step S101: Determine the current silicon capacity in the silicon anode cell.

[0022] Among them, the current silicon capacity characterizes the reversible capacity that silicon component materials in silicon anode cells can contribute.

[0023] Here, silicon anode batteries can refer to lithium-ion batteries that use silicon or silicon-based composite materials in their anode active materials. Compared with traditional lithium-ion batteries that use graphite as the anode material, the core difference of silicon anode batteries lies in the different anode materials, while other components such as the positive electrode, separator, and electrolyte are basically similar.

[0024] In some embodiments, the silicon anode battery includes silicon component materials that form a conductive network. Here, silicon component materials can refer to all silicon-containing active materials in the anode that participate in electrochemical reactions, such as pure silicon particles, silicon suboxide, silicon-carbon composite materials, silicon alloy materials, etc.

[0025] In the embodiments of this application, the silicon component material in the silicon anode battery is capable of cyclic charging and discharging, and the capacity of such reversible charging and discharging can be characterized by silicon capacity. In the embodiments of this application, the current silicon capacity can refer to the reversible charging and discharging capacity that all silicon component materials in the silicon anode battery can actually contribute at the current detection time. This parameter reflects the effectiveness of the silicon component materials in participating in the electrochemical reaction in the current state and is the core indicator for judging the health status and degradation degree of the battery.

[0026] It is understandable that the silicon capacity will continuously decrease with the cycle charging and discharging of silicon anode batteries. Different repair strategies need to be customized for different degrees of decrease. Only by accurately grasping the current capacity can precise repair be achieved and blind operation be avoided. Therefore, it is necessary to determine the current silicon capacity.

[0027] Regarding the process of determining the current silicon capacity, in one possible implementation, the current silicon capacity can be determined by an experimentally established silicon capacity decay model. The input data of this silicon capacity decay model can be some measurable parameters, such as open-circuit voltage and temperature, and the output data is the current silicon capacity. This silicon capacity decay model can be trained based on data such as open-circuit voltage, temperature, state of charge, rated capacity of the battery, and number of charge-discharge cycles during the historical charge-discharge process of the silicon anode battery.

[0028] In another possible implementation, the process for step S101, "determining the current silicon capacity in the silicon anode cell," may include the following steps: Step S1011: Determine the open-circuit voltage of the silicon component material in the negative electrode material of the silicon negative electrode battery during the discharge process based on the specification parameters of the silicon negative electrode battery.

[0029] The open-circuit voltage is the starting voltage at which the silicon component material begins to discharge.

[0030] Step S1012: Determine the current silicon capacity based on the difference between the termination voltage and the open-circuit voltage when the silicon component material completes discharge.

[0031] Here, specifications can refer to intrinsic parameters calibrated at the time of manufacture or obtained through prior testing of silicon anode batteries. These parameters reflect the inherent properties of silicon anode batteries, including but not limited to the battery's rated capacity, material composition, positive and negative electrode material system, the mass ratio of silicon to graphite in silicon-carbon composite materials, the lithium intercalation potential window of silicon component materials, and the battery's open-circuit voltage-state-of-charge characteristic curve.

[0032] In some embodiments, the open-circuit voltage may refer to the starting voltage at which the silicon component material begins to discharge.

[0033] It is understandable that silicon anode batteries typically consist of silicon and graphite composite materials. Since silicon and graphite have different lithium intercalation potentials, during discharge, graphite preferentially delithiates in the higher voltage range, while silicon components begin to discharge at the lower voltage range. By determining the open-circuit voltage of the silicon components, the two stages of graphite discharge and silicon component discharge can be accurately distinguished, thereby determining the process by which the silicon components begin to generate electricity and achieving accurate monitoring of the current silicon capacity.

[0034] Regarding the process of determining the open-circuit voltage, in one possible implementation, the specification parameters include the open-circuit voltage, and the open-circuit voltage can be determined directly by obtaining the specification parameters.

[0035] In another possible implementation, the specifications include voltage curve data of the charging and discharging process of the silicon anode battery. It is understood that since graphite and silicon component materials have different voltage plateaus, the curve data will also show different characteristics. By identifying the curve data, the open-circuit voltage of the silicon component material during the discharge process can be detected.

[0036] Once the open-circuit voltage is determined, the termination voltage when the silicon component material completes its discharge can be determined. Here, the termination voltage can refer to the battery voltage corresponding to the completion of the discharge of the silicon component material, which is usually the discharge cutoff voltage of the silicon negative electrode battery.

[0037] Understandably, when a battery discharges to the termination voltage, it signifies that the silicon component material has released most of its reversible capacity. Therefore, the current silicon capacity of the silicon anode battery can be determined based on the difference between the open-circuit voltage and the termination voltage.

[0038] Regarding the process of determining the current silicon capacity of a silicon anode cell based on the difference between the open-circuit voltage and the cut-off voltage, in one possible implementation, during the current discharge process of the silicon anode cell, a curve between voltage and cell capacity can be acquired. By using the difference between the open-circuit voltage and the cut-off voltage, the cell capacity range of the silicon component material during discharge can be accurately identified and determined, thereby determining the current silicon capacity.

[0039] In this way, the characteristic open-circuit voltage at which the silicon component begins to discharge is determined based on specification parameters or online identification. Then, the discharge capacity of the silicon component material is determined by the difference between the open-circuit voltage and the discharge termination voltage. This successfully extracts the reversible capacity actually contributed by the silicon component material in the current cycle from the total battery capacity, providing a reliable data basis for subsequent judgment on whether the silicon anode material meets the target repair conditions and the dynamic matching of pulse parameters.

[0040] Step S102: If the current silicon capacity is determined to meet the target repair conditions, the silicon capacity loss in the silicon anode cell is repaired using the target pulse parameters.

[0041] The target pulse parameters are related to the current silicon capacity.

[0042] Here, the target repair condition can refer to a pre-set judgment criterion used to trigger the silicon capacity loss repair operation. It can be understood that if the current silicon capacity meets the target repair condition, it can be determined that the silicon capacity loss of the silicon anode cell is large and has seriously affected the operation of the cell, so it needs to be repaired.

[0043] It is understandable that repair can restore most of the lost silicon capacity, but not every silicon capacity decay needs to be repaired immediately. Therefore, by setting target repair conditions, ineffective operations can be avoided when the silicon capacity loss is not yet significant or the repair effect is poor, while ensuring that repair is initiated in a timely manner when the silicon capacity loss reaches a level that affects the user experience.

[0044] In one possible implementation, the target repair condition is a specific threshold for silicon capacity loss. When the silicon capacity loss reaches this specific threshold, it can be determined that the current silicon capacity meets the target repair condition.

[0045] In another possible implementation, the target repair condition can be a threshold value representing the percentage of the current silicon capacity relative to the initial silicon capacity. Here, the initial silicon capacity refers to the silicon capacity of the silicon anode battery at the time of manufacture (before undergoing cycle charging and discharging), which is the maximum silicon capacity of the silicon anode battery. The initial silicon capacity can be obtained from the battery's specifications. Thus, once the current silicon capacity is determined, the percentage of the silicon capacity relative to the initial silicon capacity can be calculated, thereby accurately assessing whether the current silicon capacity is normal and whether the loss in silicon capacity needs to be repaired. For example, the target repair condition could be set to "the current silicon capacity is lower than 80% of the initial rated capacity." In this case, when the current silicon capacity value is detected to drop below 80% of the initial silicon capacity for the first time, the target repair condition is deemed met.

[0046] In another possible implementation, the initial silicon capacity can be determined by learning from the first complete discharge process of the silicon anode cell. The capacity contributed by the silicon component material during this discharge process is taken as the initial silicon capacity Qsi0, and in subsequent cycles, the silicon capacity loss parameter is calculated based on the comparison between the current silicon capacity and Qsi0. When it is determined that the current silicon capacity meets the target repair conditions, the silicon capacity loss can be repaired.

[0047] In some embodiments, silicon capacity loss can be repaired by applying a pulsed electrical signal to the silicon anode cell.

[0048] It is understandable that the root cause of the negative electrode capacity loss is that the binder breaks due to the mechanical stress caused by the continuous expansion and contraction of silicon particles, resulting in electrical contact failure. However, an appropriate pulse signal can generate local electric field enhancement, Joule heating effect or electrochemical activation, thereby driving the isolated silicon particles to re-establish electrical connection with the negative electrode conductive network, and the binder becomes effective again.

[0049] It is understandable that the pulse voltage is based on the target pulse parameters output. Here, the target pulse parameters can refer to the set of characteristic parameters of the pulse electrical signal used to perform the capacity repair operation, which may include, but are not limited to, pulse amplitude voltage or current, pulse width, pulse frequency, pulse waveform (square wave, sine wave, triangle wave, etc.), number of pulses, pulse interval, and total repair time.

[0050] In some embodiments, the target repair parameters are dynamically correlated with the current silicon capacity. In this way, different pulse electrical signals can be set for different current silicon capacities to perform more targeted and precise silicon capacity loss repair on silicon anode cells.

[0051] In one possible implementation, a mapping table between the current silicon capacity and the target pulse parameters is preset. In this way, if it is determined that the current silicon capacity meets the target repair conditions, a lookup operation can be performed based on the current silicon capacity to determine the target pulse parameters corresponding to the current silicon capacity.

[0052] In another possible implementation, the silicon capacity loss level corresponding to the current silicon capacity can be determined based on the current silicon capacity. Different levels correspond to different target pulse parameters. In this way, the corresponding silicon capacity loss level can be determined based on the current silicon capacity, and the target pulse parameters can be determined based on the silicon capacity loss level.

[0053] Once the target pulse parameters are determined, the silicon capacity loss of the silicon anode cell can be repaired.

[0054] In some embodiments, the target pulse parameters include pulse voltage, pulse current, and repair duration. Based on the target pulse parameters, a corresponding pulse electrical signal can be output and applied to the silicon anode cell, thereby achieving precise silicon capacity loss repair.

[0055] In one possible implementation, it is possible to determine when the silicon anode cell needs to undergo another silicon capacity loss by continuously monitoring the current silicon capacity.

[0056] In another possible implementation, if the repair is too frequent, it may cause unnecessary pulse shocks to the electrode structure of the silicon anode battery, which may accelerate aging. Therefore, the actual repair needs to take into account other data, such as the number of times the silicon anode battery has been repaired.

[0057] In this embodiment of the application, the interval for repairing the silicon anode battery can be determined based on the current silicon capacity of the silicon anode battery and the number of times the silicon anode battery has been repaired.

[0058] The interval duration is dynamically updated based on the number of repairs.

[0059] Here, the number of repairs can refer to the total number of silicon capacity loss repair operations performed since the silicon anode battery was put into use. This parameter records the battery's repair history and reflects the battery's aging accumulation and the frequency of previous repair interventions.

[0060] In the embodiments of this application, the interval for repairing the silicon anode battery can be determined based on the current silicon capacity and the number of repairs to the silicon anode battery. Here, the interval can refer to the time interval or cycle interval between two adjacent repair operations. This parameter can be a time unit (such as a day or an hour) or a cycle number unit (such as the number of charge and discharge cycles). It is understood that the interval is not a fixed value, but is dynamically updated based on the current silicon capacity and the number of repairs to achieve dynamic adaptation between the repair frequency and the battery degradation state.

[0061] In one possible implementation, a quantification value can be calculated based on the current silicon capacity and the number of repairs. This quantification value can assess the health of the silicon anode cell and determine the minimum interval before the next repair.

[0062] In another possible implementation, after a silicon capacity loss repair, the repair effect of the previous repair can be determined based on the current silicon capacity after repair and the number of repairs, and the interval length can be determined based on the repair effect.

[0063] In this way, by combining the current silicon capacity and the number of repairs, an optimal repair strategy can be formulated that dynamically adjusts with the battery's life stage, maximizing the overall battery life while ensuring capacity recovery.

[0064] In the above embodiments, the health status of the battery is accurately quantified by detecting the current silicon capacity. When the current silicon capacity meets the repair conditions, it is determined that the silicon anode battery needs to repair its silicon capacity loss. At this time, the most suitable target pulse parameters are dynamically calculated based on the current silicon capacity, and repair is performed based on the appropriate target pulse parameters. On the one hand, this achieves precise repair of the capacity decay of the silicon anode battery, ensuring that the repair energy is just right. This allows isolated silicon particles to contribute capacity again and restore conductivity, while avoiding poor repair results due to pulses that are too strong or too weak. On the other hand, timely intervention when the reversible usable capacity of the silicon anode battery decays significantly improves the retention rate and lifespan of the reversible usable capacity of the silicon anode battery, providing a reliable capacity repair guarantee for the large-scale application of silicon anode batteries.

[0065] Figure 2 A schematic diagram of the implementation process of a control method for a silicon anode battery provided in this application embodiment. Figure 2 In the embodiments of this application, the process for determining whether the current silicon capacity meets the target repair conditions can be referred to Figure 2 The control method for the silicon anode battery provided in this application embodiment may further include the following steps: Step S201: Determine whether the current silicon capacity meets the target repair conditions based on the usage parameters of the silicon anode battery and the current silicon capacity.

[0066] Here, the usage parameters can refer to the characteristic parameters that describe the usage history and environmental conditions of silicon anode batteries, reflecting the aging stress and operating conditions experienced by the batteries.

[0067] In some embodiments, the parameters used may include, but are not limited to, battery cycle count (total number of completed charge and discharge cycles), battery health, battery life (cumulative calendar time or power-on time since first use), usage environment records (such as cumulative high temperature duration, duration at maximum voltage, frequency of low temperature use, temperature fluctuation amplitude, etc.), and historical charge and discharge data (such as average depth of discharge, average charge rate, number of overcharges and over-discharges, frequency of high-rate charge and discharge, etc.).

[0068] The target repair condition can refer to a pre-set judgment criterion used to trigger capacity repair operations, such as the silicon loss factor calculated based on the current silicon capacity being greater than or equal to the corresponding threshold.

[0069] It is understandable that the loss of silicon capacity in silicon anode cells may be the result of natural aging or rapid degradation under harsh conditions such as high temperature and high rate. Therefore, when determining whether the current silicon capacity meets the target repair conditions, it is necessary to obtain the usage parameters of the silicon anode cells and determine whether the current silicon capacity meets the target repair conditions based on the usage parameters and the current silicon capacity.

[0070] The process for determining the current silicon capacity can be referred to the aforementioned embodiments, and will not be repeated here.

[0071] Regarding the process of obtaining usage parameters, in some implementations, the usage parameters of the silicon anode battery can be obtained from a default storage location.

[0072] Step S202: If the difference between the silicon capacity loss parameter calculated based on the current silicon capacity and the initial silicon capacity of the silicon anode cell and the reference value corresponding to the usage parameter is within the target threshold range, it is determined that the target repair condition is met.

[0073] Here, the silicon capacity loss parameter can refer to a characteristic quantity that quantifies the degree of silicon capacity decay. In the embodiments of this application, the silicon capacity loss can be calculated based on the current silicon capacity and the initial silicon capacity.

[0074] In some implementations, the process of calculating the silicon capacity loss parameter based on the current silicon capacity and the initial silicon capacity of the silicon anode cell may include at least one of the following methods: Method 1: Use the ratio between the current silicon capacity and the initial silicon capacity as the silicon capacity loss parameter.

[0075] Method 2: Use the difference between the initial silicon capacity and the current silicon capacity as the silicon capacity loss parameter.

[0076] Method 3: Use the curve of the change from the initial silicon capacity to the current silicon capacity, or the curvature of the curve, as the silicon capacity loss parameter; Among them, the reference values ​​corresponding to different types of silicon capacity loss parameters are of different types, and the types of silicon capacity loss parameters correspond to the calculation methods of silicon capacity loss parameters.

[0077] Understandably, the silicon capacity loss parameter is a characteristic quantity that characterizes the degree of silicon capacity loss, and this parameter can have multiple forms of expression.

[0078] In one possible implementation, when the ratio between the current silicon capacity and the initial silicon capacity is used as the silicon capacity loss parameter, the silicon capacity loss parameter reflects the proportion of remaining capacity. In another possible implementation, when the difference between the initial silicon capacity and the current silicon capacity is used as the silicon capacity loss parameter, the silicon capacity loss parameter reflects the absolute amount of silicon capacity loss. In yet another possible implementation, when the curve of the change from the initial silicon capacity to the current silicon capacity or the curvature of the curve is used as the silicon capacity loss parameter, the slope of the curve reflects the rate of loss, and the curvature reflects the acceleration of the loss process, both of which alter the dynamic trend of silicon capacity loss to some extent.

[0079] In this way, based on different types of silicon capacity loss parameters, the degree of silicon capacity loss can be represented from different aspects. In practical applications, one of the calculation methods for setting silicon capacity loss parameters can be selected.

[0080] It is understandable that different calculation methods for silicon capacity loss parameters correspond to different types, and since different types of silicon capacity loss parameters have different manifestations, their corresponding reference values ​​are also different.

[0081] Here, the reference value corresponding to the parameter can refer to the silicon capacity loss parameter value that is expected to be achieved under the specific usage parameter (such as the number of cycles, health status, etc.) and is pre-calibrated.

[0082] In the embodiments of this application, different values ​​of the usage parameters correspond to different reference values. Regarding the process of determining the reference values, in one possible implementation, the reference values ​​corresponding to the usage parameters can be obtained based on the target silicon loss mapping table.

[0083] The target silicon loss mapping table represents the mapping relationship between different usage parameters and different reference values. The usage parameters include at least the number of battery cycles of the silicon anode cell, and the reference values ​​can be updated accordingly as the number of battery cycles changes.

[0084] Here, the target silicon loss mapping table can refer to a pre-established and stored data table describing the mapping relationship between different usage parameters and their corresponding reference values. In some embodiments, the table may be represented in the form of, but is not limited to, a two-dimensional lookup table, a multidimensional array, a database, or a function fitting parameter set. By looking up the table based on the usage parameter, the reference value corresponding to that usage parameter can be determined. This mapping table reflects the statistical regularity of silicon anode cells under normal aging conditions and serves as the basis for judging whether the actual degradation is abnormal. It can be understood that the mapping relationship can refer to the correspondence rule between the usage parameter and the reference value, and can be in the form of a linear relationship, a nonlinear relationship, a piecewise function, or discrete point interpolation, etc.

[0085] In one possible implementation, the reference value can be determined based on a single usage parameter, such as the number of battery cycles, which can characterize the number of charge-discharge cycles of a silicon anode battery.

[0086] In another possible implementation, the determination of the reference value requires the integration of multiple usage parameters, such as temperature, depth of discharge, and duration of exposure to high temperature and high pressure, to achieve a more refined expected baseline and improve the accuracy of repair determination.

[0087] For example, the parameters used to determine the reference value may include the battery cycle count and the total time the cell is in a high temperature and high pressure environment (HVHT time). The reference value Fth can be determined based on these two parameters by looking up the table. For example, it can be substituted into the table formula Fth=f(cycle count)+g(HVHT time).

[0088] It is understandable that the expected degradation level of silicon anode batteries is different at different cycles. For example, the degradation is faster in the early stage and gradually slows down in the later stage. Therefore, in the above embodiment, by establishing a mapping table between the number of cycles and the reference value, the reference value can be automatically updated as the battery cycle count increases, avoiding misjudgment caused by using a fixed threshold.

[0089] After determining the silicon capacity loss parameter and the corresponding reference value, the difference between the reference value and the silicon capacity loss parameter can be calculated. Here, the difference can refer to the deviation between the actual calculated silicon capacity loss parameter and the reference value corresponding to the used parameter. This difference reflects the degree of deviation of the actual attenuation from the expected attenuation.

[0090] Based on the magnitude of the difference, it can be determined whether the silicon capacity loss of the silicon anode cell needs to be repaired.

[0091] In one possible implementation, it can be detected whether the difference is within a target threshold range. Here, the target threshold range can refer to a pre-set difference range used to determine whether the repair conditions are met. It is understood that when the difference falls within this range (such as exceeding a certain threshold), it indicates that the actual attenuation deviates significantly from the expectation and repair intervention needs to be initiated.

[0092] Understandably, due to the different calculation methods and types of silicon capacity loss parameters, their manifestations differ. When the ratio between the current silicon capacity and the initial silicon capacity is the silicon capacity loss parameter, the difference can be a proportional difference. When the difference between the initial silicon capacity and the current silicon capacity is the silicon capacity loss parameter, the difference can be a specific loss value. When the curve of the change from the initial silicon capacity to the current silicon capacity, or the curvature of the curve, is the silicon capacity loss parameter, the difference can be a slope difference or a curvature difference.

[0093] Thus, in the above embodiments, by comprehensively using the reference values ​​of the parameters and the silicon capacity loss parameters determined by the current silicon capacity calculation, it is determined whether the current silicon capacity meets the target repair conditions. This ensures that when determining whether a silicon anode battery needs repair, the determination is not only based on the silicon capacity loss, but also takes into account its specific usage mileage. This allows subsequent pulse parameter design and repair operations to be more focused on the scenarios that truly require intervention, further improving the repair effect and resource utilization efficiency.

[0094] Figure 3 A schematic diagram of the implementation process of a control method for a silicon anode battery provided in this application embodiment. Figure 3 , refer to Figure 3 In this embodiment of the application, the process of step S102, "repairing the silicon capacity loss in the silicon anode cell using target pulse parameters," may include the following steps: Step S301: Determine the target pulse parameters of the repair circuit based on the current silicon capacity.

[0095] The repair circuit is a charging and discharging circuit for silicon anode batteries.

[0096] Here, the repair circuit can refer to a circuit module integrated into the charging and discharging circuit of a silicon anode battery, specifically designed to generate and apply repair pulse signals. In some embodiments, the repair circuit may include a pulse signal generator, a power amplifier circuit, a protection circuit, and connection interfaces with the positive and negative terminals of the battery.

[0097] In this embodiment, the repair circuit can utilize the battery's own charging and discharging circuit to apply a pulse signal for repair without changing the battery's external connections.

[0098] It is understandable that when outputting a pulse signal, it is necessary to determine the corresponding target pulse parameters. Here, the target pulse parameters can refer to the set of characteristic parameters of the pulse electrical signal used to perform the capacity repair operation, which is dynamically determined by the current silicon capacity.

[0099] In some implementations, the target pulse parameters may include, but are not limited to, the target pulse voltage (which may be the voltage amplitude or the voltage value corresponding to different times), the target pulse current (which may be the maximum charging current), and the target duration (the total duration of a repair operation).

[0100] In this embodiment, the target pulse parameter is determined based on the current silicon capacity. In this way, the target pulse parameter most suitable for the current state of the silicon anode cell can be dynamically calculated, thereby providing precise control instructions for the subsequent application of repair signals.

[0101] Regarding the process of determining the target pulse parameters based on the current silicon capacity, in one possible implementation, it can be determined by pre-establishing a mapping table corresponding to the current silicon capacity and the target pulse parameters, and by querying the table, the target pulse parameters corresponding to the current silicon capacity can be determined.

[0102] In another possible implementation, the current silicon capacity can be substituted into a pre-set formula for calculating the target pulse parameter. For example, taking the target pulse parameter as the target duration Tp, the calculation process can refer to the following formula 1: Tp=k(Fsi) Formula 1 Fsi can be a silicon capacity loss parameter calculated based on the current silicon capacity.

[0103] In some implementations, the target parameters include at least one of the target pulse voltage and target duration of the repair circuit. The determination process of step 301, "determining the target pulse parameters of the repair circuit based on the current silicon capacity," may include at least one of the following methods: Method 1: Determine the target pulse voltage based on the silicon content in the anode material of the silicon anode battery, which is determined by the current silicon capacity, and the charging voltage of the silicon anode battery.

[0104] Method 2: Determine the target duration of the target pulse voltage and target pulse current applied to the repair circuit based on the current silicon capacity, where the target pulse current is the maximum charging current of the silicon anode battery.

[0105] Method 1 can be used to calculate the target pulse voltage. Here, silicon component material can refer to the mass or volume ratio of silicon component material in the negative electrode material of silicon negative electrode battery. It can be understood that the silicon component content can be dynamically determined according to the current silicon capacity, for example, it can be determined based on a preset mapping relationship.

[0106] Here, the charging voltage can refer to the normal charging voltage between the positive and negative electrodes of the silicon anode battery during the charging process; the target pulse voltage can refer to the voltage amplitude of the repair pulse to be applied as determined by this method. This parameter is related to the silicon composition content and the charging voltage to ensure that the pulse voltage is within a safe and effective range.

[0107] Regarding the process of determining the target pulse voltage, in one possible implementation, the silicon composition content and charging voltage can be substituted into a preset calculation formula to calculate the target pulse voltage. The calculation formula can refer to Formula 2 below: Vp = Vchg + h(Si%) Formula 2 Where Vchg is the conventional charging voltage, Si% is the silicon content, and h(Si%) is a function calculated based on the silicon content.

[0108] The calculation process for the duration of the target can be referred to Formula 1 above, and will not be repeated here.

[0109] Regarding the target pulse current, in one possible implementation, it can be calculated and determined based on the current silicon capacity; in another possible implementation, the maximum charging current can be directly used as the target pulse current.

[0110] In this way, by incorporating the silicon component content and charging voltage into the determination process of the target pulse voltage, and dynamically matching the target repair duration based on the current silicon capacity, the repair energy is precisely matched with the battery material properties, safety boundaries, and degree of degradation, fundamentally ensuring the targetedness and safety of the repair operation.

[0111] In step S302, the control repair circuit applies a target pulse signal to the silicon anode cell with target pulse parameters, so as to use the pulse electric field formed by the target pulse signal to drive the isolated silicon particles in the silicon anode cell to re-establish electrical connection with the anode conductive network, thereby repairing the silicon capacity loss caused by the isolated silicon particles.

[0112] Here, the target pulse signal can refer to the electrical pulse signal actually generated according to the target pulse parameters and applied to the positive and negative electrodes of the silicon anode cell. This signal is the physical carrier of the repair operation.

[0113] It is understandable that when the target pulse signal is applied to the silicon anode cell, a pulsed electric field will be formed inside the cell, especially around the anode plate and silicon particles. This pulsed electric field can penetrate the failed binder layer, surface passivation film and other interface layers, and generate local electrical breakdown and Joule heating effect between the isolated silicon particles and the conductive network. This drives the isolated silicon particles to move closer to the effective silicon component material in the anode conductive network, thereby re-establishing the electrical connection and repairing the silicon capacity loss caused by the isolated silicon particles.

[0114] Here, isolated silicon particles refer to silicon component material particles that, during repeated charge-discharge cycles, have lost their electrical contact with the conductive agent and current collector due to mechanical stress caused by volume expansion and contraction, resulting in cracking, pulverization, and peeling of the binder network. Although these particles still possess lithium storage capacity, they can no longer participate in electrochemical reactions and no longer contribute to capacity, which is the direct cause of silicon capacity loss.

[0115] The negative electrode conductive network refers to the electron conduction pathway in the negative electrode sheet, which is composed of conductive agents (such as carbon black, carbon nanotubes, graphene, etc.) and current collectors. Silicon particles need to be attached to or connected to this network to achieve charging and discharging.

[0116] In this embodiment of the application, the repair circuit can be controlled to apply a target pulse signal to the silicon anode battery with target pulse parameters. Specifically, the implementation process may include: at the initial moment of charging the silicon anode battery, controlling the repair circuit to apply a target pulse voltage and a target pulse current with a target duration; and after the target duration, charging the silicon anode battery with preset charging parameters.

[0117] Here, the initial charging moment can refer to the starting point of a new charging process for the silicon anode battery. In some implementations, the initial moment can be the moment when the charger is detected to be connected, the battery's state of charge is low, and it is ready to start charging. Applying the repair pulse at this moment can make full use of the "preparation time" in the initial stage of charging, and complete the repair without affecting the subsequent normal charging.

[0118] In this way, a transient voltage pulse can be used to charge the silicon anode battery at the start of charging, thereby applying a pulse electrical signal to complete the repair.

[0119] It is understandable that when outputting a target pulse signal, the amplitude of its pulse voltage can be set according to the target pulse voltage, the pulse current can be set according to the target pulse current, and the duration of maintaining the output pulse signal is set according to the target duration.

[0120] In this embodiment, after the target duration, the repair of the silicon anode battery can be determined to be complete. At this point, the silicon anode battery can be directly charged normally using preset charging parameters. Here, preset charging parameters refer to a set of standard parameters used for regular charging of silicon anode batteries, including but not limited to constant current charging current (e.g., 0.5C, 1C), constant voltage charging voltage (e.g., 4.2V, 4.35V), charging cut-off current, and charging temperature protection threshold. These parameters are preset by the battery management system according to the battery specifications to ensure a safe and efficient charging process.

[0121] In the above embodiments, by precisely arranging the repair pulse to be applied at the initial moment of charging and seamlessly connecting it to the regular charging process after the repair is completed, this step achieves a deep integration of the repair operation with the daily use scenario of the battery. It makes full use of the charging power supply and the initial time window to ensure repair efficiency, and ensures that the battery can be recharged normally in a healthy state by preset charging parameters, without adding extra operational burden. This provides a practical and universal engineering implementation solution for the capacity repair of silicon anode batteries.

[0122] The following describes the application of the embodiments of this application in a real-world scenario.

[0123] High-density silicon anode battery design is a key technology for improving the energy density of lithium-ion batteries.

[0124] Figure 4 This illustration shows the structural changes of silicon particles during cyclic charging and discharging in a silicon anode battery according to an embodiment of this application. It can be seen that the silicon anode battery undergoes significant volume expansion during charging and discharging, which can easily lead to binder failure and cause some silicon particles to become "isolated silicon particles" due to loss of electrical contact. These isolated silicon particles cannot participate in the reaction, resulting in a sharp capacity decay and severely hindering the practical application of silicon anode batteries. This paper studies the repair of "isolated silicon particles," restoring some of the lost capacity and improving battery capacity retention and battery life.

[0125] Based on this, this application provides a repair method. Figure 5 The schematic diagram of a repair principle provided in the embodiment of this application shows that, in A, after a pulse voltage is applied to the silicon negative electrode battery, a pulse electric field is generated inside the battery. Referring to B, isolated silicon particles undergo positive dielectric electrophoresis, while active silicon materials undergo negative dielectric electrophoresis, forming the situation in C. That is, each isolated silicon particle is driven to reconnect with the negative electrode conductive network under the action of dielectric electrophoresis.

[0126] Based on this, refer to Figure 6 This is a schematic diagram of an exemplary repair method provided in an embodiment of this application. The repair method provided in this application may include the following: Step S601, during the discharging process, the capacity from OCVsi (open circuit voltage OCV corresponding to the starting silicon discharging capacity) to full discharge is the silicon capacity Qsi. The change of the silicon capacity Qsi is learned during the discharging process and compared with the initial silicon capacity Qsi0.

[0127] Step S602, calculate the silicon loss factor Fsi = Qsi / Qsi0.

[0128] Step S603, set the silicon loss threshold table Fth = f(cycles) + g(HVHT time) according to the number of battery cycles (cycle) and the cumulative storage time of the battery cell at high temperature and high voltage (the battery cell temperature >= T0 and the maximum battery cell voltage >= V0).

[0129] Step S604, whenever the number of battery cycles increases (cycle + 1), determine whether the current silicon loss factor is less than the threshold, that is, determine whether Fsi(cycle) < Fth exists. It can be understood that Fsi and Fth = f(cycles) + g(HVHT time) correspond to the same cycle count.

[0130] Step S605, if the current silicon loss factor is less than the threshold, start the transient voltage pulse repair.

[0131] Among them, at the start of charging, transient voltage pulse charging is performed. Set the pulse voltage Vp = Vchg + h(Si%), where Vchg is the conventional charging voltage and h(Si%) is set according to the proportion of silicon content in the negative electrode; the pulse current Ip = Ichg max (cellspec) is the maximum charging current defined by the battery cell specification; the pulse time Tp = k(Fsi) is set according to the current silicon loss factor Fsi.

[0132] Step S606, after the transient voltage pulse charging is completed, this repair is completed and the normal charging state is restored.

[0133] Based on the foregoing embodiments, an embodiment of the present application provides a silicon negative electrode battery. The silicon negative electrode battery includes a silicon component material, and the silicon component material is used to provide a reversibly usable capacity for the silicon negative electrode battery to construct a negative electrode conductive network. When the current silicon capacity characterizing the reversibly usable capacity meets the target repair condition, the silicon capacity loss in the silicon negative electrode battery can be repaired by a repair circuit based on the target pulse parameters.

[0134] Here, the silicon negative electrode battery may refer to a lithium-ion battery that uses silicon or a silicon-based composite material in the negative electrode active material, and includes components such as a positive electrode, a negative electrode, a separator, an electrolyte, and a battery management system.

[0135] Silicon-based materials can refer to all silicon-containing active materials in the negative electrode that participate in the electrochemical lithium storage reaction, including but not limited to pure silicon particles, silicon suboxide, silicon-carbon composite materials, and silicon alloy materials. They are the core materials that provide reversible capacity.

[0136] Reversible capacity refers to the amount of lithium ions that silicon-based materials can reversibly store and release during charge-discharge cycles, reflecting the effective activity level of silicon materials.

[0137] The negative electrode conductive network can refer to the electron conduction pathway in the negative electrode sheet, which is composed of conductive agents (such as carbon black, carbon nanotubes, and graphene) and current collectors. Silicon component materials need to be attached to or connected to this network in order to participate in the electrochemical reaction normally.

[0138] Current silicon capacity refers to the reversible capacity that silicon components in a silicon anode battery can contribute at the current testing moment, and is a core indicator for judging the health status of silicon materials.

[0139] The target repair condition can refer to the pre-set judgment criteria used to trigger the capacity repair operation, which can be determined based on the current silicon capacity and usage parameters (such as cycle count, health status, usage environment, etc.).

[0140] Silicon capacity loss can refer to the reversible capacity reduction of silicon anode batteries during cycling due to mechanical deactivation of silicon components (forming isolated silicon particles), excessively thick surface films, poor electrical contact, and other reasons.

[0141] A repair circuit can refer to a circuit module integrated into the charging and discharging circuit of a silicon anode battery, specifically designed to generate and apply repair pulse signals, and is usually part of a battery management system.

[0142] The target pulse parameters can refer to the set of characteristic parameters of the pulse electrical signal used to perform capacity repair operations, including pulse amplitude, pulse width, pulse frequency, pulse waveform, number of pulses, etc., and these parameters are dynamically related to the current silicon capacity.

[0143] The silicon anode battery provided in this application can restore the lost capacity when the silicon component material is separated from the conductive network and forms isolated particles due to volume expansion and contraction during repeated charging and discharging. This can be achieved by real-time monitoring of the current silicon capacity and applying a target pulse parameter dynamically matched to the current silicon capacity using a repair circuit integrated in the charging and discharging circuit when the target repair conditions are met. This restores the lost capacity during normal battery use without disassembling the battery or interrupting user use.

[0144] Based on the foregoing embodiments, this application provides a control device for a silicon anode battery. The device includes various units and modules included in each unit, which can be implemented by a processor or controller in an electronic device; of course, it can also be implemented by specific logic circuits. In the implementation process, the processor can be a central processing unit (CPU), a microprocessor unit (MPU), a digital signal processor (DSP), or a field programmable gate array (FPGA), etc.

[0145] Figure 7 This is a schematic diagram of the composition structure of a control device for a silicon anode battery provided in an embodiment of this application, as shown below. Figure 7 As shown, the control device 700 for a silicon anode cell includes: a determination module 701 and a repair module 702, wherein: The determination module 701 is used to determine the current silicon capacity in the silicon anode cell, which characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute. Repair module 702 is used to repair the silicon capacity loss in silicon anode cells by using target pulse parameters when the current silicon capacity is determined to meet the target repair conditions. The target pulse parameters are related to the current silicon capacity.

[0146] In some embodiments, the device 700 further includes: The judgment module is used to determine whether the current silicon capacity meets the target repair conditions based on the usage parameters of the silicon anode battery and the current silicon capacity. If the difference between the silicon capacity loss parameter calculated based on the current silicon capacity and the initial silicon capacity of the silicon anode battery and the reference value corresponding to the usage parameters is within the target threshold range, it is determined that the target repair conditions are met. The reference values ​​are different for different usage parameters.

[0147] In some embodiments, when the determination module performs the step of "calculating the silicon capacity loss parameter based on the current silicon capacity and the initial silicon capacity of the silicon anode cell", it is specifically used for: The ratio of the current silicon capacity to the initial silicon capacity is used as the silicon capacity loss parameter; The difference between the initial silicon capacity and the current silicon capacity is used as the silicon capacity loss parameter; The curve of change from the initial silicon capacity to the current silicon capacity, or the curvature of the curve, is used as the silicon capacity loss parameter. Among them, the reference values ​​corresponding to different types of silicon capacity loss parameters are of different types, and the types of silicon capacity loss parameters correspond to the calculation methods of silicon capacity loss parameters.

[0148] In some embodiments, the determination module is further configured to: obtain reference values ​​corresponding to the usage parameters based on the target silicon loss mapping table; The target silicon loss mapping table represents the mapping relationship between different usage parameters and different reference values. The usage parameters include at least the number of battery cycles of the silicon anode cell, and the reference values ​​can be updated accordingly as the number of battery cycles changes.

[0149] In some embodiments, the repair module 702 includes: The parameter determination unit is used to determine the target pulse parameters of the repair circuit based on the current silicon capacity. The repair circuit belongs to the charging and discharging circuit of the silicon negative electrode battery. The pulse repair unit is used to control the repair circuit to apply a target pulse signal to the silicon anode cell with target pulse parameters. The pulse electric field formed by the target pulse signal drives the isolated silicon particles in the silicon anode cell to re-establish electrical connection with the anode conductive network, thereby repairing the silicon capacity loss caused by the isolated silicon particles.

[0150] In some embodiments, the target parameters include at least one of the target pulse voltage and target duration of the repair circuit, and the parameter determination unit is used to perform: The target pulse voltage is determined based on the silicon content in the anode material of the silicon anode battery, which is determined by the current silicon capacity, and the charging voltage of the silicon anode battery. The target duration for applying the target pulse voltage and target pulse current to the repair circuit is determined based on the current silicon capacity, where the target pulse current is the maximum charging current of the silicon anode battery.

[0151] In some embodiments, the pulse repair unit is specifically used to perform: At the initial moment of charging the silicon anode cell, the control repair circuit applies a target pulse voltage and a target pulse current for a target duration; and, After the target duration, the silicon anode battery is charged with preset charging parameters.

[0152] In some embodiments, the determining module 701 includes: The first determining unit is used to determine the open-circuit voltage of the silicon component material in the negative electrode material of the silicon negative electrode battery during the discharge process based on the specification parameters of the silicon negative electrode battery. The open-circuit voltage is the starting voltage of the silicon component material to begin discharging. The second determining unit is used to determine the current silicon capacity based on the difference between the termination voltage and the open-circuit voltage when the silicon component material completes discharge.

[0153] In some embodiments, the apparatus further includes: The update module is used to determine the interval for repairing the silicon anode cell based on the current silicon capacity of the silicon anode cell and the number of repairs performed on the silicon anode cell. The interval is dynamically updated based on the number of repairs performed.

[0154] The descriptions of the apparatus embodiments above are similar to those of the method embodiments above, and have similar beneficial effects. In some embodiments, the functions or modules included in the apparatus provided in this application can be used to perform the methods described in the method embodiments above. For technical details not disclosed in the apparatus embodiments of this application, please refer to the descriptions of the method embodiments of this application for understanding.

[0155] It should be noted that, in the embodiments of this application, if the above-described control method for silicon anode batteries is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiments of this application, or the part that contributes to the related technology, can be embodied in the form of a software product. This software product is stored in a storage medium and includes several instructions to cause an electronic device (which may be a personal computer, server, or network device, etc.) to execute all or part of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, mobile hard drives, read-only memory (ROM), magnetic disks, or optical disks. Thus, the embodiments of this application are not limited to any specific hardware, software, or firmware, or any combination of hardware, software, and firmware.

[0156] This application provides an electronic device, which includes a body and a silicon anode battery disposed on the body. The silicon anode battery includes a package shell, a cell structure disposed on the package shell, and a control chip. The control chip is configured to perform the following: Determine the current silicon capacity in the silicon anode cell. The silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute. Based on the current silicon capacity, and assuming that the target repair conditions are met, the silicon capacity loss in the silicon anode cell is repaired using the target pulse parameters, which are related to the current silicon capacity.

[0157] This application provides a silicon anode battery, including a package shell, a cell structure disposed in the package shell, and a control chip. The control chip is configured to perform the following: Determine the current silicon capacity in the silicon anode cell. The silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute. Based on the current silicon capacity, and assuming that the target repair conditions are met, the silicon capacity loss in the silicon anode cell is repaired using the target pulse parameters, which are related to the current silicon capacity.

[0158] This application provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements some or all of the steps in the above-described method. The computer-readable storage medium can be transient or non-transient.

[0159] This application provides a computer program including computer-readable code, wherein when the computer-readable code is executed in an electronic device, a processor in the electronic device performs some or all of the steps in the above-described method.

[0160] This application provides a computer program product, which includes a non-transitory computer-readable storage medium storing a computer program. When the computer program is read and executed by a computer, it implements some or all of the steps in the above-described method. This computer program product can be implemented specifically through hardware, software, or a combination thereof. In some embodiments, the computer program product is specifically embodied as a computer storage medium; in other embodiments, the computer program product is specifically embodied as a software product, such as a software development kit (SDK), etc.

[0161] It should be noted that the descriptions of the various embodiments above tend to emphasize the differences between them, while their similarities or commonalities can be referred to interchangeably. The descriptions of the above embodiments of the device, storage medium, computer program, and computer program product are similar to the descriptions of the above method embodiments and have similar beneficial effects. For technical details not disclosed in the embodiments of the device, storage medium, computer program, and computer program product of this application, please refer to the descriptions of the method embodiments of this application for understanding.

[0162] Figure 8 This is a hardware entity diagram of an electronic device provided in an embodiment of this application, such as... Figure 8 As shown, the hardware entity of the electronic device 800 includes: a processor 801, a communication interface 802, and a memory 803, wherein: The processor 801 executes a program to implement the steps of the control method for the silicon anode cell described above. The processor 801 typically controls the overall operation of the electronic device 800.

[0163] Communication interface 802 enables electronic devices to communicate with other terminals or servers via a network.

[0164] The memory 803 is configured to store instructions and applications executable by the processor 801, and can also cache data to be processed or already processed (e.g., image data, audio data, voice communication data, and video communication data) in the processor 801 and various modules in the electronic device 800. It can be implemented using flash memory or random access memory (RAM). Data transfer between the processor 801, the communication interface 802, and the memory 803 can be performed via bus 804.

[0165] This application provides a computer storage medium storing one or more programs that can be executed by one or more processors to implement the steps of the control method for silicon anode cells as described in any of the above embodiments.

[0166] It should be noted that the descriptions of the storage medium and device embodiments above are similar to the descriptions of the method embodiments above, and have similar beneficial effects. For technical details not disclosed in the storage medium and device embodiments of this application, please refer to the descriptions of the method embodiments of this application for understanding.

[0167] The aforementioned processor can be at least one of the following: Application Specific Integrated Circuit (ASIC), Digital Signal Processor (DSP), Digital Signal Processing Device (DSPD), Programmable Logic Device (PLD), Field Programmable Gate Array (FPGA), Central Processing Unit (CPU), Controller, Microcontroller, and Microprocessor. It is understood that other electronic devices can also implement the functions of the aforementioned processor, and this application does not specifically limit the specific implementation.

[0168] The aforementioned computer storage media / memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), magnetic random access memory (FRAM), flash memory, magnetic surface memory, optical disc, or compact disc read-only memory (CD-ROM), etc.; or it can be various terminals that include one or any combination of the above-mentioned memories, such as mobile phones, computers, tablet devices, personal digital assistants, etc.

[0169] The above description is merely an embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

Claims

1. A control method for a silicon anode cell, comprising: Determine the current silicon capacity in the silicon anode cell, wherein the current silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute; When the current silicon capacity is determined to meet the target repair conditions, the silicon capacity loss in the silicon anode cell is repaired using target pulse parameters, wherein the target pulse parameters are related to the current silicon capacity.

2. The method according to claim 1, further comprising: Based on the usage parameters of the silicon anode battery and the current silicon capacity, determine whether the current silicon capacity meets the target repair conditions; If the difference between the silicon capacity loss parameter calculated based on the current silicon capacity and the initial silicon capacity of the silicon anode cell and the reference value corresponding to the usage parameter is within the target threshold range, it is determined that the target repair condition is met. Different reference values ​​correspond to different usage parameters.

3. The method according to claim 2, wherein the calculation of the silicon capacity loss parameter based on the current silicon capacity and the initial silicon capacity of the silicon anode cell includes at least one of the following: The ratio between the current silicon capacity and the initial silicon capacity is used as the silicon capacity loss parameter. The difference between the initial silicon capacity and the current silicon capacity is used as the silicon capacity loss parameter; The curve of the change from the initial silicon capacity to the current silicon capacity, or the curvature of the curve, is used as the silicon capacity loss parameter. in, Different types of silicon capacity loss parameters correspond to different types of reference values, and the type of silicon capacity loss parameter corresponds to the calculation method of the silicon capacity loss parameter.

4. The method according to claim 2, further comprising: The reference values ​​corresponding to the usage parameters are obtained based on the target silicon loss mapping table; The target silicon loss mapping table represents the mapping relationship between different usage parameters and different reference values. The usage parameters include at least the number of battery cycles of the silicon anode cell, and the reference values ​​can be updated accordingly as the number of battery cycles changes.

5. The method according to any one of claims 1 to 4, wherein repairing the silicon capacity loss in the silicon anode cell using target pulse parameters comprises: The target pulse parameters of the repair circuit are determined based on the current silicon capacity, and the repair circuit belongs to the charging and discharging circuit of the silicon anode battery. The repair circuit is controlled to apply a target pulse signal to the silicon anode cell with the target pulse parameters, so as to use the pulse electric field formed by the target pulse signal to drive the isolated silicon particles in the silicon anode cell to re-establish electrical connection with the anode conductive network, thereby repairing the silicon capacity loss caused by the isolated silicon particles.

6. The method of claim 5, wherein the target parameter includes at least one of the target pulse voltage and target duration of the repair circuit, and determining the target pulse parameter of the repair circuit based on the current silicon capacity includes at least one of the following: The target pulse voltage is determined based on the silicon content in the negative electrode material of the silicon negative electrode battery, which is determined by the current silicon capacity, and the charging voltage of the silicon negative electrode battery. The target duration for which the target pulse voltage and the target pulse current are applied to the repair circuit is determined based on the current silicon capacity, wherein... The target pulse current is the maximum charging current of the silicon anode battery.

7. The method according to claim 6, wherein controlling the repair circuit to apply a target pulse signal to the silicon anode cell with the target pulse parameters comprises: At the initial moment of charging the silicon anode battery, the repair circuit is controlled to apply a target pulse voltage and a target pulse current for a target duration. as well as, After the target duration, the silicon anode battery is charged with preset charging parameters.

8. The method according to claim 1, wherein determining the current silicon capacity in the silicon anode cell comprises: Based on the specifications of the silicon anode battery, the open-circuit voltage of the silicon component material in the anode material of the silicon anode battery during the discharge process is determined, and the open-circuit voltage is the starting voltage at which the silicon component material begins to discharge. The current silicon capacity is determined based on the difference between the termination voltage when the silicon component material completes discharge and the open-circuit voltage; And / or, The method further includes: The interval for repairing the silicon anode battery is determined based on the current silicon capacity of the silicon anode battery and the number of repairs performed on the silicon anode battery. The interval is dynamically updated based on the number of repairs performed.

9. A silicon anode battery, comprising a package housing, a cell structure disposed within the package housing, and a control chip, the control chip being configured to perform: Determine the current silicon capacity in the silicon anode cell, wherein the silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute; Based on the current silicon capacity, if the target repair conditions are met, the silicon capacity loss in the silicon anode cell is repaired using target pulse parameters, wherein... The target pulse parameters are related to the current silicon capacity.

10. An electronic device comprising a body and a silicon negative electrode battery disposed on the body, wherein, The silicon anode cell includes a package housing, a cell structure disposed within the package housing, and a control chip, wherein the control chip is configured to perform: Determine the current silicon capacity in the silicon anode cell, wherein the silicon capacity characterizes the reversible usable capacity that the silicon component material in the silicon anode cell can contribute; If the target repair conditions are met based on the current silicon capacity, the silicon capacity loss in the silicon anode cell is repaired using target pulse parameters, wherein the target pulse parameters are related to the current silicon capacity.

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