Method for modifying a mask pattern

By introducing auxiliary patterns and performing preprocessing operations in semiconductor manufacturing, the problems of boundary drift and insufficient development caused by optical proximity effect are solved, and the stability of the mask structure and the satisfaction of design requirements are achieved.

CN122362733APending Publication Date: 2026-07-10SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
Filing Date
2025-01-10
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In the semiconductor manufacturing process, the optical proximity effect caused by the increased chip integration leads to problems such as the circularization of pattern corners, which existing optical proximity correction methods cannot effectively solve. In particular, when processing sub-resolution graphics, boundary drift and insufficient development are prone to occur.

Method used

An initial mask pattern is formed by creating an auxiliary pattern near the target pattern, and preprocessing operations are performed to obtain the preset target pattern. Then, optical correction is performed to ensure boundary stability and compliance with mask manufacturing rules.

Benefits of technology

This reduces the displacement of pattern boundaries in the mask structure after optical correction, avoids photoresist residue caused by insufficient development, and improves the matching degree and design compliance of the final chip structure.

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Abstract

This disclosure provides a method for correcting a mask pattern, comprising: acquiring a target pattern, the target pattern including at least a first pattern and a second pattern, the first pattern and the second pattern being close to each other; forming an auxiliary pattern near the position where the first pattern and the second pattern are close to each other, and using the target pattern and the auxiliary pattern together as an initial mask pattern; performing a preprocessing operation on the target pattern to obtain a preset target pattern, the area of ​​which is smaller than the sum of the areas of the target pattern and the auxiliary pattern; and performing an optical correction operation based on the preset target pattern and the initial mask pattern.
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