A tellurium-cadmium-mercury infrared detector and a preparation method thereof

By combining negative photoresist and metal mask, the problem of mismatch between the contact hole and injection area size in mercury cadmium telluride infrared detectors was solved, achieving ultra-small cell spacing and high array uniformity, thus improving detector performance and production efficiency.

CN122373519APending Publication Date: 2026-07-10BEIJING CHIPTRON TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING CHIPTRON TECH CO LTD
Filing Date
2026-04-16
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In the fabrication process of existing mercury cadmium telluride infrared detectors, mismatch between the size of the contact hole and the injection area, as well as photoresist deformation leading to positioning deviations, limit further reduction in the cell spacing and affect the pixel density and array uniformity of the detector.

Method used

A metal mask layer is grown using negative photoresist combined with a lift-off process to define the contact hole pattern. The metal mask is then used as an ion implantation mask to simplify the process flow, ensure that the contact hole and the implantation area are the same size, avoid photoresist deformation, and form a reliable ohmic contact.

Benefits of technology

It achieves precise matching of ultra-small cell spacing (≤5 μm), improves the pixel density and array uniformity of the detector, simplifies the process flow, improves process stability and production efficiency, and ensures the reliability of electrode connection.

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Abstract

This invention discloses a mercury cadmium telluride infrared detector and its fabrication method. The method innovatively employs negative photoresist and a lift-off process to grow a metal mask and define contact hole patterns. This metal mask layer serves as both an ion implantation mask and a contact hole etching mask, solving the problems of implantation region positioning deviation and size mismatch in traditional processes. It enables ultra-small cell spacing, improves the detector's photoelectric performance and array uniformity, and is suitable for the large-scale fabrication of high-density infrared detector planar arrays.
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