Biosensing element, biosensor and bio-detection chip
By introducing a hydrophobic protective layer with a water contact angle greater than that of the gate insulating layer into the thin-film transistor, the characteristic drift problem of thin-film transistor biosensors is solved, improving the stability and accuracy of detection, and making it suitable for early screening of Alzheimer's disease.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING BOE TECH DEV CO LTD
- Filing Date
- 2025-01-17
- Publication Date
- 2026-07-17
AI Technical Summary
Existing thin-film transistor biosensors are prone to characteristic transfer curve drift when operating for extended periods or affected by environmental factors, resulting in poor detection stability and accuracy, which limits their application, especially in the early screening of Alzheimer's disease.
Introducing a protective layer into a thin-film transistor (TFT) with a water contact angle greater than that of the gate insulating layer creates a highly hydrophobic protective layer. This avoids oxygen vacancy defects and charge traps between the active layer and the gate insulating layer, thereby improving the stability of the TFT.
It effectively alleviates the drift problem of thin-film transistor characteristic transfer curves, improves the detection performance stability and accuracy of biosensor elements, and is suitable for early screening of Alzheimer's disease.
Smart Images
Figure CN122409796A_ABST