Piezoelectrically driven silicon-based mems dual resonator structure
By integrating dual resonator units with different frequency temperature coefficients into a piezoelectric-driven silicon-based MEMS resonator, and using one resonator unit as a temperature sensor for real-time compensation, the frequency instability problem of the piezoelectric-driven silicon-based MEMS resonator under temperature changes is solved, achieving high-precision frequency-temperature stability and low-cost temperature compensation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGZHOU LEYI INVESTMENT CO LTD
- Filing Date
- 2025-01-16
- Publication Date
- 2026-07-17
AI Technical Summary
Existing piezoelectric-driven silicon-based MEMS resonators exhibit frequency instability with temperature variations, making it difficult to achieve frequency temperature stability below ±10ppm. Furthermore, existing temperature compensation methods suffer from lag or inaccuracy.
A piezoelectric-driven silicon-based MEMS dual resonator structure is designed. By integrating two resonator units on a substrate, temperature compensation is performed using resonator units with different frequency temperature coefficients. One of the resonator units acts as a temperature sensor, adjusting the frequency signal in real time to achieve high-precision temperature compensation.
It achieves frequency temperature stability of ±5ppb to ±10ppm within a certain temperature range, reduces processing and assembly costs, and improves device performance consistency and temperature compensation accuracy.
Smart Images
Figure CN122419409A_ABST