High frequency module and communication device

Abstract

The present application relates to a high-frequency module and a communication device, and realizes improvement of shielding. The high-frequency module (100) has: a mounting substrate (9), an elastic wave filter (1), a metal block (3), a resin layer (5), and a shielding layer (6). The mounting substrate (9) has a first main surface (91) and a second main surface (92) opposite to each other, and has a ground layer (94). The elastic wave filter (1) is mounted on the first main surface (91) of the mounting substrate (9). The metal block (3) is arranged on the first main surface (91) of the mounting substrate (9) and is connected with the ground layer (94). The resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9) and covers the outer circumferential surface (13) of the elastic wave filter (1) and the outer circumferential surface (33) of the metal block (3). The shielding layer (6) covers the main surface (12) of the resin layer (5), the metal block (3) and the elastic wave filter (1) on the side opposite to the mounting substrate (9). The metal block (3) is in contact with the shielding layer (6).

Description

Technical Field

[0001] This invention generally relates to high-frequency modules and communication devices, and more specifically, to a high-frequency module having a mounting substrate and a communication device having the high-frequency module. Background Technology

[0002] Patent Document 1 discloses a high-frequency module comprising: a mounting substrate having a first main surface and a second main surface that are opposite to each other, a transmitting filter mounted on the first main surface of the mounting substrate, a resin component covering the transmitting filter, and a shielding electrode layer.

[0003] In the high-frequency module disclosed in Patent Document 1, the shielding electrode layer is formed to cover the top and side surfaces of the resin component.

[0004] Patent Document 1: International Publication No. 2019 / 181590

[0005] In high-frequency modules and communication devices equipped with such modules, enhanced shielding is sometimes required. Summary of the Invention

[0006] The purpose of this invention is to provide a high-frequency module and a communication device that can improve shielding performance.

[0007] A high-frequency module according to one aspect of the present invention includes: a mounting substrate, an elastic wave filter, a metal block, a resin layer, and a shielding layer. The mounting substrate has a first main surface and a second main surface facing each other, and a ground layer. The elastic wave filter is mounted on the first main surface of the mounting substrate. The metal block is disposed on the first main surface of the mounting substrate and connected to the ground layer. The resin layer is disposed on the first main surface of the mounting substrate and covers the outer peripheral surface of the elastic wave filter and the outer peripheral surface of the metal block. The shielding layer covers the resin layer, the metal block, and the main surface of the elastic wave filter opposite to the mounting substrate side. The metal block is in contact with the shielding layer.

[0008] A high-frequency module according to one aspect of the present invention includes: a mounting substrate, an elastic wave filter, a metal component, a metal block, a resin layer, and a shielding layer. The mounting substrate has a first main surface and a second main surface facing each other, and a ground layer. The elastic wave filter is mounted on the first main surface of the mounting substrate. The metal component is disposed on the main surface of the elastic wave filter opposite to the mounting substrate side. The metal block is disposed on the first main surface of the mounting substrate and connected to the ground layer. The resin layer is disposed on the first main surface of the mounting substrate and covers the outer peripheral surface of the elastic wave filter, the outer peripheral surface of the metal component, and the outer peripheral surface of the metal block. The shielding layer covers the resin layer, the metal component, and the metal block. The metal block is in contact with the shielding layer.

[0009] One aspect of the present invention relates to a communication device comprising the aforementioned high-frequency module and signal processing circuit. The signal processing circuit is connected to the aforementioned high-frequency module.

[0010] The high-frequency module and communication device described above by the present invention can achieve improved shielding. Attached Figure Description

[0011] Figure 1 The high-frequency module according to Embodiment 1 is shown in a top view, omitting the shielding layer and the resin layer.

[0012] Figure 2 The high-frequency module shown above is Figure 1 A sectional view along line AA.

[0013] Figure 3 This is a circuit diagram of a communication device equipped with the aforementioned high-frequency module.

[0014] Figure 4 The high-frequency module according to Embodiment 2 is shown in a top view, omitting the shielding layer and the resin layer.

[0015] Figure 5 The high-frequency module shown above is Figure 4 A sectional view along line AA.

[0016] Figure 6 The high-frequency module according to Embodiment 3 is shown in a top view, omitting the shielding layer and the resin layer.

[0017] Figure 7 This is a top view of the aforementioned high-frequency module, taken from the first main surface of the mounting substrate, showing the second main surface of the mounting substrate, the circuit components disposed on the second main surface of the mounting substrate, and a plurality of external connection terminals.

[0018] Figure 8The high-frequency module shown above is Figure 6 A sectional view along line AA.

[0019] Figure 9 The high-frequency module according to Embodiment 4 is shown in a top view, omitting the shielding layer and the resin layer.

[0020] Figure 10 This is a top view of the aforementioned high-frequency module, taken from the first main surface of the mounting substrate, showing the second main surface of the mounting substrate, the circuit components disposed on the second main surface of the mounting substrate, and a plurality of external connection terminals.

[0021] Figure 11 The high-frequency module shown above is Figure 9 A sectional view along line AA.

[0022] Figure 12 This is a cross-sectional view of the high-frequency module involved in Implementation Method 5.

[0023] Figure 13 This is a cross-sectional view of the high-frequency module involved in Implementation Method 6. Detailed Implementation

[0024] The following implementation methods, etc., refer to Figure 1 , 2 Figures 4 through 13 are schematic diagrams. The size and thickness ratios of the constituent elements in the figures may not necessarily reflect the actual size ratios.

[0025] (Implementation Method 1)

[0026] The high-frequency module 100 involved in Implementation Method 1 is, for example, as follows: Figure 1 As shown in Figure 2, the high-frequency module 100 includes a mounting substrate 9, an elastic wave filter 1, a metal block 3, a resin layer 5, and a shielding layer 6. The mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other, and a ground layer 94. The elastic wave filter 1 is mounted on the first main surface 91 of the mounting substrate 9. The metal block 3 is disposed on the first main surface 91 of the mounting substrate 9 and connected to the ground layer 94. The resin layer 5 is disposed on the first main surface 91 of the mounting substrate 9 and covers the outer peripheral surface 13 of the elastic wave filter 1 and the outer peripheral surface 33 of the metal block 3. The shielding layer 6 covers the main surface 12 of the elastic wave filter 1 opposite to the side of the mounting substrate 9, the resin layer 5, and the metal block 3.

[0027] The following is for reference Figures 1-3 The high-frequency module 100 and the communication device 300 involved in Embodiment 1 will be described in more detail.

[0028] (1) High-frequency module and communication device

[0029] (1.1) Circuit structure of high-frequency module and communication device

[0030] like Figure 3 As shown, the high-frequency module 100 is used, for example, in a communication device 300. The communication device 300 is, for example, a mobile phone (e.g., a smartphone), but is not limited to this; it could also be a wearable terminal (e.g., a smartwatch). The high-frequency module 100 is, for example, a module capable of supporting 4G (fourth-generation mobile communication) standards, 5G (fifth-generation mobile communication) standards, etc. The 4G standard is, for example, 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 100 is, for example, a module capable of supporting carrier aggregation and dual connectivity.

[0031] The high-frequency module 100 is configured, for example, to amplify the transmitted signal (high-frequency signal) input from the signal processing circuit 301 and output it to the antenna 310. Additionally, the high-frequency module 100 is configured to amplify the received signal (high-frequency signal) input from the antenna 310 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high-frequency module 100, but is a component of the communication device 300 incorporating the high-frequency module 100. The high-frequency module 100 is controlled, for example, by the signal processing circuit 301 in the communication device 300. The communication device 300 includes the high-frequency module 100 and the signal processing circuit 301. The communication device 300 also includes the antenna 310. The communication device 300 also includes a circuit board on which the high-frequency module 100 is mounted. The circuit board is, for example, a printed circuit board. The circuit board has a ground electrode to which a ground potential is applied.

[0032] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) that performs signal processing on high-frequency signals. The RF signal processing circuit 302 performs up-conversion and other signal processing on the high-frequency signal (transmit signal) output from the baseband signal processing circuit 303, and outputs the processed high-frequency signal. Additionally, the RF signal processing circuit 302 performs down-conversion and other signal processing on the high-frequency signal (receive signal) output from the high-frequency module 100, and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates I-phase and Q-phase signals based on the baseband signals. Baseband signals include, for example, externally input audio signals, image signals, etc. The baseband signal processing circuit 303 performs IQ modulation processing by synthesizing the I-phase and Q-phase signals, and outputs the transmit signal. At this time, the transmitted signal is generated as a modulated signal (IQ signal) by amplitude modulation of a carrier signal of a specified frequency with a period longer than the period of the carrier signal. The received signal, processed by the baseband signal processing circuit 303, is used for image display, for example, as an image signal, or for conversations of the user of the communication device 300, as an audio signal. The high-frequency module 100 transmits high-frequency signals (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.

[0033] The high-frequency module 100 includes a power amplifier 111 and a low-noise amplifier 121. Additionally, the high-frequency module 100 includes multiple (e.g., two) transmitting filters 112A and 112B and multiple (e.g., two) receiving filters 122A and 122B. Furthermore, the high-frequency module 100 includes an output matching circuit 113 and an input matching circuit 123. Additionally, the high-frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. Furthermore, the high-frequency module 100 also includes a controller 115. In the high-frequency module 100, the multiple transmitting filters 112A and 112B and the multiple receiving filters 122A and 122B are paired one-to-one. The transmitting filter 112A among the multiple transmitting filters 112A and 112B whose passband frequency difference with the corresponding receiving filter 122A and 122B is small constitutes the aforementioned elastic wave filter 1 (see reference). Figure 1 And 2).

[0034] In addition, the high-frequency module 100 has multiple external connection terminals 80. These external connection terminals 80 include: an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a control terminal 84, and multiple grounding terminals 85 (see reference). Figure 2 Multiple grounding terminals 85 are terminals that are electrically connected to the grounding electrode of the circuit board of the communication device 300 and are given a grounding potential.

[0035] Power amplifier 111 has input terminals and output terminals. Power amplifier 111 amplifies the transmitted signal input to the input terminal in a first frequency band and outputs it from the output terminal. The first frequency band includes, for example, a first communication band and a second communication band. The first communication band corresponds to the transmitted signal passing through transmit filter 112A, for example, Band 22 of the 3GPP LTE standard. The second communication band corresponds to the transmitted signal passing through transmit filter 112B, for example, Band 11 of the 3GPP LTE standard. The input terminal of power amplifier 111 is connected to signal input terminal 82. The input terminal of power amplifier 111 is connected to signal processing circuit 301 via signal input terminal 82. Signal input terminal 82 is a terminal for inputting a high-frequency signal (transmit signal) from an external circuit (e.g., signal processing circuit 301) to high-frequency module 100. The output terminal of power amplifier 111 is connected to a common terminal 150 of second switch 105 via output matching circuit 113.

[0036] The low-noise amplifier 121 has input terminals and output terminals. The low-noise amplifier 121 amplifies the received signal in a second frequency band input to the input terminal and outputs it from the output terminal. The second frequency band is, for example, the same as the first frequency band, including a first communication band and a second communication band. The input terminal of the low-noise amplifier 121 is connected to a common terminal 160 of the third switch 106 via an input matching circuit 123. The output terminal of the low-noise amplifier 121 is connected to a signal output terminal 83. The output terminal of the low-noise amplifier 121 is connected to a signal processing circuit 301, for example, via the signal output terminal 83. The signal output terminal 83 is a terminal for outputting the high-frequency signal (received signal) from the low-noise amplifier 121 to an external circuit (e.g., the signal processing circuit 301).

[0037] Transmit filter 112A is, for example, a filter that sets the transmit band of the first communication frequency band as a passband. Transmit filter 112B is, for example, a filter that sets the transmit band of the second communication frequency band as a passband. Receive filter 122A is, for example, a filter that sets the receive band of the first communication frequency band as a passband. Receive filter 122B is, for example, a filter that sets the receive band of the second communication frequency band as a passband.

[0038] The first switch 104 has a common terminal 140 and multiple (e.g., two) selectable terminals 141, 142. The common terminal 140 is connected to the antenna terminal 81. An antenna 310 is connected to the antenna terminal 81. Selectable terminal 141 is connected to the connection point between the output terminal of the transmit filter 112A and the input terminal of the receive filter 122A. Selectable terminal 142 is connected to the connection point between the output terminal of the transmit filter 112B and the input terminal of the receive filter 122B. The first switch 104 is, for example, a switch capable of connecting at least one of the multiple selectable terminals 141, 142 to the common terminal 140. Here, the first switch 104 is, for example, a switch capable of one-to-one and one-to-many connections.

[0039] The first switch 104 is controlled, for example, by the signal processing circuit 301. The first switch 104 switches the connection state between the common terminal 140 and the plurality of select terminals 141, 142 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The first switch 104 is, for example, a switch IC (Integrated Circuit).

[0040] The second switch 105 has a common terminal 150 and multiple (e.g., two) selectable terminals 151, 152. The common terminal 150 is connected to the output terminal of the power amplifier 111 via an output matching circuit 113. Selectable terminal 151 is connected to the input terminal of the transmit filter 112A. Selectable terminal 152 is connected to the input terminal of the transmit filter 112B. The second switch 105 is, for example, a switch capable of connecting at least one of the multiple selectable terminals 151, 152 to the common terminal 150. Here, the second switch 105 is, for example, a switch capable of both one-to-one and one-to-many connections.

[0041] The second switch 105 is controlled, for example, by the signal processing circuit 301. The second switch 105 switches the connection state between the common terminal 150 and the multiple select terminals 151, 152 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 105 is, for example, a switch IC.

[0042] The third switch 106 has a common terminal 160 and multiple (e.g., two) selectable terminals 161, 162. The common terminal 160 is connected to the input terminal of the low-noise amplifier 121 via an input matching circuit 123. Selectable terminal 161 is connected to the output terminal of the receiver filter 122A. Selectable terminal 162 is connected to the output terminal of the receiver filter 122B. The third switch 106 is, for example, a switch capable of connecting at least one of the multiple selectable terminals 161, 162 to the common terminal 160. Here, the third switch 106 is, for example, a switch capable of both one-to-one and one-to-many connections.

[0043] The third switch 106 is controlled, for example, by the signal processing circuit 301. The third switch 106 switches the connection state between the common terminal 160 and the multiple select terminals 161, 162 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 106 is, for example, a switch IC.

[0044] Output matching circuit 113 is disposed in the signal path between the output terminal of power amplifier 111 and the common terminal 150 of second switch 105. Output matching circuit 113 is used to achieve impedance matching between power amplifier 111 and transmitting filters 112A, 112B. Output matching circuit 113 includes, for example, two inductors L1, L2 (see reference). Figure 1 However, it is not limited to this. For example, there are cases consisting of a single inductor, or cases containing multiple inductors and multiple capacitors.

[0045] Input matching circuit 123 is disposed in the signal path between the input terminal of low-noise amplifier 121 and the common terminal 160 of third switch 106. Input matching circuit 123 is used to achieve impedance matching between low-noise amplifier 121 and receiving filters 122A, 122B. Input matching circuit 123 consists, for example, of an inductor L3 (see reference). Figure 1 It can be composed of, but is not limited to, for example, it may include multiple inductors and multiple capacitors.

[0046] Controller 115 is connected to control terminal 84. Controller 115 is connected to signal processing circuitry 301 via control terminal 84. Control terminal 84 is a terminal for inputting control signals from external circuitry (e.g., signal processing circuitry 301) to high-frequency module 100. Controller 115 controls power amplifier 111 based on the control signals from signal processing circuitry 301.

[0047] (1.2) Construction of high-frequency module

[0048] like Figure 1As shown in Figure 2, the high-frequency module 100 includes a mounting base plate 9 and multiple circuit components. These circuit components include: a power amplifier 111, an IC chip 120 containing a low-noise amplifier 121, two transmit filters 112A and 112B, two receive filters 122A and 122B, circuit components for an output matching circuit 113 (two inductors L1 and L2), and circuit components for an input matching circuit 123 (inductor L3). Additionally, the multiple circuit components also include a first switch 104, a second switch 105, a third switch 106, and a controller 115. Furthermore, the high-frequency module 100 also includes multiple external connection terminals 80. These external connection terminals 80 include: an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a control terminal 84, and multiple ground terminals 85.

[0049] Mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of mounting substrate 9. Mounting substrate 9 is, for example, a multilayer substrate comprising multiple dielectric layers and multiple conductive layers. Multiple dielectric layers and multiple conductive layers are stacked in the thickness direction D1 of mounting substrate 9. The multiple conductive layers are formed in a predetermined pattern determined by each layer. Each of the multiple conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of mounting substrate 9. The material of each conductive layer is, for example, copper. The multiple conductive layers include a ground layer 94 (see reference). Figure 2 In the high-frequency module 100, multiple ground terminals 85 and ground layer 94 are electrically connected via conductive vias in the mounting substrate 9. The mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 9 is not limited to an LTCC substrate; for example, it can also be a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.

[0050] Furthermore, the mounting substrate 9 is not limited to an LTCC substrate; it can also be a wiring structure, for example. The wiring structure can be, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. If there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined by each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. If there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern determined by each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first surface of two opposing surfaces in the thickness direction of the multilayer structure is the first main surface 91 of the mounting substrate 9, and the second surface is the second main surface 92 of the mounting substrate 9. The wiring structure can also be, for example, an interposer. The interposer can be an interposer using a silicon substrate, or it can be a substrate composed of multiple layers.

[0051] The first main surface 91 and the second main surface 92 of the mounting substrate 9 are separated in the thickness direction D1 of the mounting substrate 9 and intersect the thickness direction D1. The first main surface 91 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. Similarly, the second main surface 92 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. Furthermore, the first main surface 91 and the second main surface 92 of the mounting substrate 9 may also have minute irregularities or recesses or protrusions. For example, if the first main surface 91 of the mounting substrate 9 has a recess, the inner surface of the recess is included in the first main surface 91.

[0052] In the high-frequency module 100 according to Embodiment 1, a plurality of circuit components are mounted on the first main surface 91 of the mounting substrate 9. "Circuit components mounted on the first main surface 91 of the mounting substrate 9" includes both the circuit components being mechanically connected to the first main surface 91 of the mounting substrate 9 and the circuit components being electrically connected to the mounting substrate 9 (appropriate conductor portions). Therefore, in the high-frequency module 100, a plurality of circuit components are disposed on the first main surface 91 of the mounting substrate 9. The high-frequency module 100 is not limited to only a plurality of circuit components mounted on the mounting substrate 9, but may also include circuit elements disposed within the mounting substrate 9.

[0053] The power amplifier 111 is an IC chip containing a circuit section for amplifying a high-frequency signal (transmit signal). The power amplifier 111 is flip-chip mounted on the first main surface 91 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of the power amplifier 111 is quadrilateral. The amplifying transistor is, for example, an HBT (Heterojunction Bipolar Transistor). In this case, the IC chip constituting the power amplifier 111 is, for example, a GaAs-based IC chip. The amplifying transistor is not limited to bipolar transistors such as HBTs; it can also be, for example, a FET (Field Effect Transistor). An FET is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). The IC chip constituting the power amplifier 111 is not limited to a GaAs-based IC chip; it can also be, for example, a Si-based IC chip, a SiGe-based IC chip, or a GaN-based IC chip.

[0054] The IC chip 120, which includes a low-noise amplifier 121, is an IC chip that includes a circuit section comprising a transistor for amplifying a high-frequency signal (received signal). The IC chip 120 is flip-chip mounted on the first main surface 91 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of the IC chip 120 is quadrilateral. The transistor for amplification is a field-effect transistor, but is not limited to it; for example, it could also be a bipolar transistor. The IC chip 120 is a Si-based IC chip, but is not limited to it.

[0055] Each filter in the two transmitting filters 112A and 112B and the two receiving filters 122A and 122B is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. Each filter in the two transmitting filters 112A and 112B and the two receiving filters 122A and 122B is, for example, an elastic wave filter. The multiple series-arm resonators and multiple parallel-arm resonators of the elastic wave filter are each composed of elastic wave resonators. The elastic wave filter is, for example, a surface elastic wave filter utilizing elastic surface waves.

[0056] In a surface elastic wave filter, each of the multiple series arm resonators and multiple parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

[0057] A surface elastic wave filter may include, for example, a piezoelectric substrate, multiple IDT (Interdigital Transducer) electrodes formed on the piezoelectric substrate and corresponding one-to-one with multiple series-arm resonators, and multiple IDT electrodes formed on the piezoelectric substrate and corresponding one-to-one with multiple parallel-arm resonators. The piezoelectric substrate is, for example, a piezoelectric substrate. The piezoelectric substrate may be, for example, a lithium niobate substrate, a lithium tantalate substrate, or a crystal substrate. The piezoelectric substrate is not limited to a piezoelectric substrate; for example, it may be a laminated substrate comprising a silicon substrate, a high-velocity acoustic film on the silicon substrate, a low-velocity acoustic film on the high-velocity acoustic film, and a piezoelectric layer on the low-velocity acoustic film. In the laminated substrate, the material of the piezoelectric layer is, for example, lithium niobate or lithium tantalate. The low-velocity acoustic film is a film in which the velocity of a bulk wave propagating in the low-velocity acoustic film is lower than the velocity of a bulk wave propagating in the piezoelectric layer. The material of the low-velocity acoustic film is, for example, silicon oxide. A hypersonic membrane is a membrane in which the speed of sound of bulk waves propagating is higher than the speed of sound of elastic waves propagating in a piezoelectric layer. Materials for hypersonic membranes include, for example, silicon nitride.

[0058] Each of the two transmitting filters 112A and 112B is, for example, an elastic wave filter for a bare die (also referred to as a bare chip). Viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of each of the two transmitting filters 112A and 112B is quadrilateral. Each of the two transmitting filters 112A and 112B is flip-chip mounted on the first main surface 91 of the mounting substrate 9.

[0059] Each of the two receiving filters 122A and 122B is, for example, an elastic wave filter for a bare die (also referred to as a bare chip). Viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of each of the two receiving filters 122A and 122B is quadrilateral. Each of the two receiving filters 122A and 122B is flip-chip mounted on the first main surface 91 of the mounting substrate 9.

[0060] Each of the first switch 104, the second switch 105, and the third switch 106 is an IC chip containing a circuit section with multiple FETs (Field Effect Transistors). The circuit section is a functional unit that switches the connection state between a common terminal and multiple select terminals. Each of the first switch 104, the second switch 105, and the third switch 106 is flip-chip mounted on the first main surface 91 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of each of the first switch 104, the second switch 105, and the third switch 106 is quadrilateral.

[0061] Each of the two inductors L1 and L2 in the output matching circuit 113 is, for example, a chip inductor. The two inductors L1 and L2 in the output matching circuit 113 are, for example, mounted on the first main surface 91 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of each of the two inductors L1 and L2 is quadrilateral. The output matching circuit 113 may also include an inner layer inductor disposed within the mounting substrate 9. Furthermore, the output matching circuit 113 is not limited to a structure having two inductors L1 and L2; it may also be a transformer.

[0062] The inductor L3 constituting the input matching circuit 123 is, for example, a chip inductor. When viewed from the thickness direction D1 of the mounting substrate 9, the outer periphery of the inductor L3 is quadrilateral. The input matching circuit 123 may also include an inner layer inductor disposed within the mounting substrate 9.

[0063] Multiple external connection terminals 80 are disposed on the second main surface 92 of the mounting substrate 9. "External connection terminals 80 disposed on the second main surface 92 of the mounting substrate 9" includes: mechanical connection between the external connection terminals 80 and the second main surface 92 of the mounting substrate 9, and electrical connection between the external connection terminals 80 and (appropriate conductor portions) of the mounting substrate 9. The material of the multiple external connection terminals 80 is, for example, metal (e.g., copper, copper alloy, etc.).

[0064] In addition to the antenna terminal 81, signal input terminal 82, signal output terminal 83, and control terminal 84 described above, the multiple external connection terminals 80 also include multiple ground terminals 85. The multiple ground terminals 85 are electrically connected to the ground layer 94 of the mounting substrate 9 as described above. The ground layer 94 is the circuit ground of the high-frequency module 100, and multiple circuit components of the high-frequency module 100 include circuit components electrically connected to the ground layer 94.

[0065] The metal block 3 is disposed on the first main surface 91 of the mounting substrate 9. "The metal block 3 is disposed on the first main surface 91 of the mounting substrate 9" includes: the metal block 3 being mechanically connected to the first main surface 91 of the mounting substrate 9, and the metal block 3 being electrically connected to (a suitable conductor portion) of the mounting substrate 9. The conductor portion of the electrically connected metal block 3 is a conductor portion connected to the ground layer 94.

[0066] The metal block 3 is made of materials such as copper or copper alloy. The metal block 3 is bonded to the conductor portion of the mounting substrate 9, for example, by solder, but is not limited to this. For example, it can be bonded using a conductive adhesive (e.g., conductive paste) or directly.

[0067] When viewed from the thickness direction D1 of the mounting substrate 9, the metal block 3 is separated from any of the multiple circuit components. Furthermore, when viewed from the thickness direction D1 of the mounting substrate 9, the metal block 3 is located away from the outer edge of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the metal block 3 is linear. The thickness of the metal block 3 on the thickness direction D1 of the mounting substrate 9 is greater than the thickness of the elastic wave filter 1. The thickness of the metal block 3 is approximately the same as the distance between the mounting substrate 9 and the shielding layer 6 on the thickness direction D1 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the length of the long side of the metal block 3 is longer than the length of each of the four sides of the elastic wave filter 1. Furthermore, when viewed from the thickness direction D1 of the mounting substrate 9, the length of the short side of the metal block 3 is shorter than the length of each of the four sides of the elastic wave filter 1. The metal block 3 is configured such that, when viewed from the thickness direction D1 of the mounting substrate 9, its two long sides are approximately parallel to two of the four sides of the mounting substrate 9. The shape of the metal block 3 when viewed from the thickness direction D1 of the mounting substrate 9 is not limited to a straight line. It can also be any shape such as a curve, a broken line, a combination of straight lines and curves, a comb shape, or a frame shape.

[0068] The resin layer 5 covers at least a portion of each of the plurality of circuit components mounted on the first main surface 91 of the mounting substrate 9. The resin layer 5 comprises resin (e.g., epoxy resin). In addition to resin, the resin layer 5 may also contain fillers. The resin layer 5 covers the outer peripheral surfaces of each of the plurality of circuit components, and also covers the main surface of a portion of the circuit components opposite to the mounting substrate 9 side. Regarding the elastic wave filter 1, the outer peripheral surface 13 of the elastic wave filter 1 is covered by the resin layer 5. However, the main surface 12 of the elastic wave filter 1 opposite to the mounting substrate 9 side is not covered by the resin layer 5.

[0069] The shielding layer 6 is conductive. The shielding layer 6 has a multilayer structure consisting of multiple stacked metal layers, but is not limited to this; it can also be a single metal layer. The metal layers comprise one or more metals. The shielding layer 6 covers the main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, the outer peripheral surface 53 of the resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9. The shielding layer 6 is in contact with at least a portion of the outer peripheral surface of the ground layer 94 of the mounting substrate 9. Additionally, the shielding layer 6 covers the metal block 3. Thus, the shielding layer 6 is in contact with the metal block 3. More specifically, the shielding layer 6 is in contact with the surface 31 of the metal block 3 opposite to the mounting substrate 9 side. Here, the shielding layer 6 is in direct contact with approximately the entire area of ​​the surface 31 of the metal block 3 opposite to the mounting substrate 9 side. Furthermore, the shielding layer 6 covers the main surface 12 of the elastic wave filter 1 opposite to the mounting substrate 9 side. Thus, the shielding layer 6 is in contact with the main surface 12 of the elastic wave filter 1 opposite to the mounting substrate 9 side. Here, the shielding layer 6 is in direct contact with approximately the entire area of ​​the main surface 12 of the elastic wave filter 1 on the side opposite to the mounting substrate 9.

[0070] When the shielding layer 6 has a multi-layer structure, the lowest metal layer among the multiple metal layers can be used as a tight bonding layer for the metal block 3, the elastic wave filter 1 and the resin layer 5, and other metal layers can be formed by metal layers with higher conductivity than the tight bonding layer.

[0071] In the high-frequency module 100 of Embodiment 1, the main surface 12 of the elastic wave filter 1 opposite to the mounting substrate 9, the main surface 51 of the resin layer 5, and the surface 31 of the metal block 3 are approximately on the same plane, but are not limited thereto.

[0072] (1.3) Layout of circuit components in the high-frequency module

[0073] In the high-frequency module 100, the elastic wave filter 1 is a transmitting filter 112A. In the high-frequency module 100, when viewed from the thickness direction D1 of the mounting substrate 9, the elastic wave filter 1 and the metal block 3 are adjacent. "The elastic wave filter 1 and the metal block 3 are adjacent" means that when viewed from the thickness direction D1 of the mounting substrate 9, there are no other circuit components between the elastic wave filter 1 and the metal block 3, and the elastic wave filter 1 and the metal block 3 are adjacent.

[0074] In addition, in the high-frequency module 100, each of the multiple circuit components, including the receiving filter 122A, the IC chip 120 containing the low-noise amplifier 121, the inductor L3 of the input matching circuit 123, and the third switch 106, constitutes the electronic component 2 located on the opposite side of the elastic wave filter 1 when viewed from the metal block 3.

[0075] Viewed from the thickness direction D1 of the mounting substrate 9, the power amplifier 111 is positioned near one of the four corners of the first main surface 91 of the quadrilateral mounting substrate 9. Viewed from the metal block 3, the power amplifier 111 is located on the side opposite to the electronic component 2. Viewed from the elastic wave filter 1, the power amplifier 111 is located on the side opposite to the metal block 3. In the high-frequency module 100, in the direction in which the power amplifier 111 and the elastic wave filter 1 are arranged, there are no other circuit components on the side opposite to the elastic wave filter 1 when viewed from the power amplifier 111; the power amplifier 111 and the shielding layer 6 are adjacent.

[0076] (2) Manufacturing method of high frequency module

[0077] As a manufacturing method for the high-frequency module 100, a manufacturing method comprising a first process, a second process, a third process, and a fourth process can be employed. The first process involves mounting multiple circuit components and arranging a metal block 3 on the first main surface 91 of the mounting substrate 9. The second process involves forming a resin material layer covering the multiple circuit components and the metal block 3, which will form the basis of the resin layer 5, on the side of the first main surface 91 of the mounting substrate 9. The third process involves grinding the resin material layer from the main surface opposite to the mounting substrate 9 side of the resin material layer to expose the elastic wave filter 1 and the metal block 3, and then grinding the resin material layer, the piezoelectric substrate of the elastic wave filter 1, and the metal block 3 to form the resin layer 5, thereby thinning the piezoelectric substrate of the elastic wave filter 1 and the metal block 3. The fourth process involves forming, for example, a shielding layer 6 covering the main surface 51 of the resin layer 5, the main surface 12 of the elastic wave filter 1, and the metal block 3 by vapor deposition, sputtering, or printing.

[0078] (3) Effects

[0079] (3.1) High-frequency module

[0080] The high-frequency module 100 according to Embodiment 1 includes: a mounting substrate 9, an elastic wave filter 1, a metal block 3, a resin layer 5, and a shielding layer 6. The mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other, and a ground layer 94. The elastic wave filter 1 is mounted on the first main surface 91 of the mounting substrate 9. The metal block 3 is disposed on the first main surface 91 of the mounting substrate 9 and connected to the ground layer 94. The resin layer 5 is disposed on the first main surface 91 of the mounting substrate 9 and covers the outer peripheral surface 13 of the elastic wave filter 1 and the outer peripheral surface 33 of the metal block 3. The shielding layer 6 covers the main surface 12 of the elastic wave filter 1 opposite to the mounting substrate 9 side, the resin layer 5, and the metal block 3. The metal block 3 is in contact with the shielding layer 6.

[0081] In the high-frequency module 100 according to Embodiment 1, the metal block 3 connected to the ground layer 94 of the mounting substrate 9 is in contact with the shielding layer 6, thereby improving the shielding performance. In the high-frequency module 100 according to Embodiment 1, the shielding performance of the shielding layer 6 is improved by the contact between the metal block 3 and the shielding layer 6.

[0082] Furthermore, in the high-frequency module 100 according to Embodiment 1, the elastic wave filter 1 is in contact with the shielding layer 6, thus improving heat dissipation. Additionally, in the high-frequency module 100 according to Embodiment 1, heat generated in the elastic wave filter 1 and transferred to the shielding layer 6 is easily transferred to the metal block 3, further improving heat dissipation. From the viewpoint of improving heat dissipation, it is preferable that the shielding layer 6 is in contact with the entire area of ​​the main surface 12 of the elastic wave filter 1 on the side opposite to the mounting substrate 9. However, it is not necessary for the shielding layer 6 to be in contact with the entire surface of the main surface 12 of the elastic wave filter 1.

[0083] In the high-frequency module 100 according to Embodiment 1, the heat generated in the elastic wave filter 1 can be dissipated through the shielding layer 6. Therefore, the high-frequency module 100 according to Embodiment 1 can suppress the temperature rise of the piezoelectric substrate of the elastic wave filter 1. Consequently, the high-frequency module 100 according to Embodiment 1 can stabilize the temperature characteristics of the elastic wave filter 1, and can stabilize the characteristics of the high-frequency module 100.

[0084] Furthermore, in the high-frequency module 100 according to Embodiment 1, the elastic wave filter 1 is a transmitting filter 112A. The heat from the transmitting filter 112A is difficult to transfer to the receiving filter 122A connected to it, thus suppressing the characteristic degradation of the receiving filter 122A. Additionally, in the high-frequency module 100 according to Embodiment 1, the characteristic degradation of the isolation between the transmitting filter 112A and the receiving filter 122A can be suppressed.

[0085] Furthermore, in the high-frequency module 100 according to Embodiment 1, the plurality of electronic components 2 located on the opposite side of the elastic wave filter 1, as viewed from the metal block 3, include: a receiving filter 122A, an IC chip 120 containing a low-noise amplifier 121, an inductor L3 with an input matching circuit 123, and a third switch 106. Therefore, the high-frequency module 100 according to Embodiment 1 can improve the isolation between the elastic wave filter 1 and the plurality of electronic components 2. More specifically, it can suppress the influence (flying towards electronic components 2) of the transmitted signal through the elastic wave filter 1 on the electronic components 2.

[0086] Furthermore, in the high-frequency module 100 according to Embodiment 1, each of the main surface 12 of the elastic wave filter 1 and the surface 31 of the metal block 3 is rougher than the main surface of the electronic component 2 covered by the resin layer 5 on the side opposite to the mounting substrate 9. Therefore, in the high-frequency module 100 according to Embodiment 1, the tightness of the elastic wave filter 1 and the metal block 3 with the shielding layer 6 can be improved. Additionally, in the high-frequency module 100 according to Embodiment 1, unwanted waves (e.g., unwanted bulk waves) propagating along the thickness direction of the lithium niobate substrate or lithium tantalate substrate constituting the piezoelectric substrate in the elastic wave filter 1 can be scattered at the interface between the piezoelectric substrate and the shielding layer 6, thereby improving the filter characteristics of the elastic wave filter 1. Examples of improving filter characteristics include suppressing higher harmonic distortion.

[0087] (3.2) Communication device

[0088] The communication device 300 according to Embodiment 1 includes a signal processing circuit 301 and a high-frequency module 100. The signal processing circuit 301 is connected to the high-frequency module 100.

[0089] Since the communication device 300 according to Embodiment 1 has a high-frequency module 100, it is possible to improve shielding.

[0090] The multiple circuit components constituting the signal processing circuit 301 can be mounted on the circuit board described above, or on a different circuit board (second circuit board) than the circuit board (first circuit board) on which the high-frequency module 100 is mounted.

[0091] (Implementation Method 2)

[0092] Reference Figure 4 The high-frequency module 100a according to Embodiment 2 will be described in section 5. Regarding the high-frequency module 100a according to Embodiment 2, the same reference numerals are used for the same constituent elements as those in the high-frequency module 100 according to Embodiment 1, and descriptions are omitted. Furthermore, the circuit structure of the high-frequency module 100a is the same as that in the reference section. Figure 3 The circuit structure of the high-frequency module 100 described in Embodiment 1 is the same.

[0093] The high-frequency module 100a according to Embodiment 2 differs from the high-frequency module 100 according to Embodiment 1 in that it has multiple (two in the example shown) metal blocks 3. Hereinafter, the metal block 3 disposed between the elastic wave filter 1 and the receiving filter 122A, the inductor L3, the IC chip 120 and the third switch 106 is sometimes referred to as the first metal block 3A, and the metal block 3 disposed between the elastic wave filter 1 and the power amplifier 111 is referred to as the second metal block 3B.

[0094] In the high-frequency module 100a according to Embodiment 2, each of the receiving filter 122A, the IC chip 120 including the low-noise amplifier 121, the inductor L3 of the input matching circuit 123, and the third switch 106 constitutes an electronic component 2 located on the opposite side of the elastic wave filter 1 when viewed from the first metal block 3A.

[0095] Furthermore, in the high-frequency module 100a according to Embodiment 2, the power amplifier 111 constitutes an electronic component 2 located on the opposite side of the elastic wave filter 1 when viewed from the second metal block 3B. In the high-frequency module 100a according to Embodiment 2, the power amplifier 111 and the second metal block 3B are adjacent to each other. "The power amplifier 111 and the second metal block 3B are adjacent to each other" means that when viewed from the thickness direction D1 of the mounting substrate 9, there are no other circuit components between the power amplifier 111 and the second metal block 3B, and the power amplifier 111 and the second metal block 3B are adjacent to each other.

[0096] In the high-frequency module 100a according to Embodiment 2, in the direction in which the second metal block 3B and the first metal block 3A are arranged, the power amplifier 111, the second metal block 3B, the elastic wave filter 1 (transmitting filter 112A), the first metal block 3A, and the receiving filter 122A are arranged in the following order: power amplifier 111, second metal block 3B, elastic wave filter 1 (transmitting filter 112A), first metal block 3A, and receiving filter 122A. Viewed from the second metal block 3B, the elastic wave filter 1 (transmitting filter 112A) and the transmitting filter 112B are located on the opposite side from the power amplifier 111. In the high-frequency module 100a according to Embodiment 2, when viewed from the thickness direction D1 of the mounting substrate 9, the second metal block 3B is located between the transmitting filter 112B and the power amplifier 111. Furthermore, in the high-frequency module 100a according to Embodiment 2, when viewed from the thickness direction D1 of the mounting substrate 9, the power amplifier 111 and the output matching circuit 113 (inductor L1) are adjacent in a direction orthogonal to the direction in which the second metal block 3B and the first metal block 3A are arranged. Here, in the high-frequency module 100a according to Embodiment 2, the power amplifier 111, the output matching circuit 113, and the controller 115 are arranged in the order of power amplifier 111, output matching circuit 113, and controller 115.

[0097] In the high-frequency module 100a according to Embodiment 2, the plurality of metal blocks 3 connected to the ground layer 94 of the mounting substrate 9 are in contact with the shielding layer 6, thus achieving improved shielding performance compared to the high-frequency module 100 according to Embodiment 1. Furthermore, in the high-frequency module 100a according to Embodiment 2, the length of the first metal block 3A is longer than the length of the metal block 3 in the high-frequency module 100 according to Embodiment 1, and is approximately the same as the length of the short side of the mounting substrate 9. In the high-frequency module 100a, the first and second end faces of the first metal block 3A in the long side direction are not covered by the first resin layer 5 and are in contact with the shielding layer 6. Therefore, the high-frequency module 100a according to Embodiment 2 achieves further improvement in shielding performance.

[0098] In addition, the high-frequency module 100a in Embodiment 2 is similar to the high-frequency module 100 in Embodiment 1, with the main surface 12 of the elastic wave filter 1 in contact with the shielding layer 6, thus suppressing the temperature rise of the elastic wave filter 1.

[0099] Furthermore, in the high-frequency module 100a according to Embodiment 2, the electronic component 2 located on the opposite side of the elastic wave filter 1, as viewed from the second metal block 3B, includes a power amplifier 111. Therefore, the heat generated in the power amplifier 111 is difficult to transfer to the elastic wave filter 1, and the temperature rise of the piezoelectric substrate of the elastic wave filter 1 can be suppressed.

[0100] Furthermore, in the high-frequency module 100a according to Embodiment 2, the power amplifier 111 and the second metal block 3B are adjacent to each other, so the signal from the power amplifier 111 can suppress the influence of other electronic components 2 (jump to other electronic components 2).

[0101] (Implementation Method 3)

[0102] Reference Figures 6-8 The high-frequency module 100b according to Embodiment 3 will be described. Regarding the high-frequency module 100b according to Embodiment 3, the same reference numerals are used for the same constituent elements as those in the high-frequency module 100 according to Embodiment 1, and descriptions are omitted. Furthermore, the circuit structure of the high-frequency module 100b is the same as that in the reference numerals. Figure 3 The circuit structure of the high-frequency module 100 described in Embodiment 1 is the same.

[0103] The high-frequency module 100b according to Embodiment 3 differs from the high-frequency module 100 according to Embodiment 1 in that the IC chip 120, which includes a low-noise amplifier 121, is mounted on the second main surface 92 of the mounting substrate 9. Furthermore, the high-frequency module 100b according to Embodiment 3 also differs from the high-frequency module 100 according to Embodiment 1 in that the first switch 104, the third switch 106, and the controller 115 are mounted on the second main surface 92 of the mounting substrate 9.

[0104] Furthermore, the high-frequency module 100b according to Embodiment 3 differs from the high-frequency module 100 according to Embodiment 1 in that each of the plurality of external connection terminals 80 is a columnar electrode. Here, the columnar electrode is, for example, a cylindrical electrode. The plurality of external connection terminals 80 are bonded to the conductor portion of the mounting substrate 9, for example, by solder, but are not limited thereto. For example, conductive adhesive (e.g., conductive paste) can be used for bonding, or they can be directly bonded.

[0105] Furthermore, the high-frequency module 100b according to Embodiment 3 includes a resin layer 7 (hereinafter also referred to as the second resin layer 7) in addition to the resin layer 5 (hereinafter also referred to as the first resin layer 5) disposed on the first main surface 91 of the mounting substrate 9. The second resin layer 7 covers the outer peripheral surfaces of each of the plurality of circuit components (IC chip 120, first switch 104, third switch 106 and controller 115) mounted on the second main surface 92 of the mounting substrate 9 and the outer peripheral surfaces of each of the plurality of external connection terminals 80.

[0106] The second resin layer 7 is formed such that the main surfaces of each of the plurality of circuit components mounted on the second main surface 92 of the mounting substrate 9, opposite to the side of the mounting substrate 9, are exposed. The second resin layer 7 comprises resin (e.g., epoxy resin). In addition to resin, the second resin layer 7 may also contain fillers. The material of the second resin layer 7 may be the same as the material of the first resin layer 5 or a different material.

[0107] In the high-frequency module 100b, the shielding layer 6 also covers the outer peripheral surface 73 of the second resin layer 7.

[0108] Furthermore, in the high-frequency module 100b, the main surfaces of the multiple circuit components mounted on the second main surface 92 of the mounting substrate 9 that are opposite to the mounting substrate 9 side and the main surfaces 71 of the resin layer 7 that are opposite to the mounting substrate 9 side are approximately on the same plane.

[0109] The high-frequency module 100b according to Embodiment 3 is similar to the high-frequency module 100 according to Embodiment 1. The metal block 3 connected to the ground layer 94 of the mounting substrate 9 is in contact with the shielding layer 6, thus improving the shielding performance.

[0110] In addition, the high-frequency module 100b of Embodiment 3 is similar to the high-frequency module 100 of Embodiment 1, in that the main surface 12 of the elastic wave filter 1 is in contact with the shielding layer 6, thus suppressing the temperature rise of the elastic wave filter 1.

[0111] Furthermore, in the high-frequency module 100b according to Embodiment 3, the IC chip 120 including the low-noise amplifier 121 is mounted on the second main surface 92 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the elastic wave filter 1 (transmitting filter 112A) does not overlap with the IC chip 120. Therefore, the high-frequency module 100b according to Embodiment 3 can improve the isolation between the elastic wave filter 1 and the low-noise amplifier 121. In addition, when viewed from the metal block 3 from the thickness direction D1 of the mounting substrate 9, the IC chip 120 of the high-frequency module 100b according to Embodiment 3 is located on the opposite side to the elastic wave filter 1, thus further improving the isolation between the elastic wave filter 1 and the low-noise amplifier 121.

[0112] Furthermore, in the high-frequency module 100b according to Embodiment 3, when viewed from the thickness direction D1 of the mounting substrate 9, the power amplifier 111 and the IC chip 120 do not overlap. Therefore, the high-frequency module 100b according to Embodiment 3 can improve the isolation between the power amplifier 111 and the low-noise amplifier 121.

[0113] Furthermore, in the high-frequency module 100b according to Embodiment 3, a second resin layer 7 is formed so that the main surfaces of each of the multiple circuit components (IC chip 120, first switch 104, third switch 106, and controller 115) mounted on the second main surface 92 of the mounting substrate 9 are exposed on the side opposite to the mounting substrate 9. Thus, in the structure of the high-frequency module 100b according to Embodiment 3, in which circuit components are also arranged on the second main surface 92 of the mounting substrate 9, a low height can be achieved.

[0114] (Implementation Method 4)

[0115] Reference Figures 9-11 The high-frequency module 100c according to Embodiment 4 will be described. Regarding the high-frequency module 100c according to Embodiment 4, the same reference numerals are used for the same constituent elements as those in the high-frequency module 100b according to Embodiment 3, and descriptions are omitted. Furthermore, the circuit structure of the high-frequency module 100c is the same as that in the reference numerals. Figure 3 The circuit structure of the high-frequency module 100 described in Embodiment 1 is the same.

[0116] The high-frequency module 100c according to Embodiment 4 differs from the high-frequency module 100b according to Embodiment 3 in that it has multiple (two in the example shown) metal blocks 3. Hereinafter, the metal block 3 disposed between the elastic wave filter 1, the receiving filter 122A and the inductor L3 is sometimes referred to as the first metal block 3A, and the metal block 3 disposed between the elastic wave filter 1 and the power amplifier 111 is referred to as the second metal block 3B.

[0117] In the high-frequency module 100c according to embodiment 4, each of the inductors L3 of the receiving filter 122A and the input matching circuit 123 constitutes an electronic component 2 located on the opposite side of the elastic wave filter 1 when viewed from the first metal block 3A.

[0118] Furthermore, in the high-frequency module 100c according to Embodiment 4, the power amplifier 111 constitutes an electronic component 2 located on the opposite side of the elastic wave filter 1 when viewed from the second metal block 3B. In the high-frequency module 100c according to Embodiment 4, the power amplifier 111 and the second metal block 3B are adjacent to each other. "The power amplifier 111 and the second metal block 3B are adjacent to each other" means that when viewed from the thickness direction D1 of the mounting substrate 9, there are no other circuit components between the power amplifier 111 and the second metal block 3B, and the power amplifier 111 and the second metal block 3B are adjacent to each other.

[0119] In the high-frequency module 100c according to Embodiment 4, in the direction in which the second metal block 3B and the first metal block 3A are arranged, the power amplifier 111, the second metal block 3B, the elastic wave filter 1 (transmitting filter 112A), the first metal block 3A, and the receiving filter 122A are arranged in the following order: power amplifier 111, second metal block 3B, elastic wave filter 1 (transmitting filter 112A), first metal block 3A, and receiving filter 122A. Viewed from the second metal block 3B, the elastic wave filter 1 (transmitting filter 112A) and the transmitting filter 112B are located on the opposite side from the power amplifier 111. In the high-frequency module 100c according to Embodiment 4, when viewed from the thickness direction D1 of the mounting substrate 9, the second metal block 3B is located between the transmitting filter 112B and the power amplifier 111. Furthermore, in the high-frequency module 100c according to Embodiment 4, when viewed from the thickness direction D1 of the mounting substrate 9, the power amplifier 111 and the output matching circuit 113 (inductor L1) are adjacent in a direction orthogonal to the direction in which the second metal block 3B and the first metal block 3A are arranged.

[0120] In the high-frequency module 100c according to embodiment 4, a plurality of metal blocks 3 connected to the ground layer 94 of the mounting substrate 9 are in contact with the shielding layer 6, thus improving the shielding performance compared to the high-frequency module 100b according to embodiment 3.

[0121] In addition, the high-frequency module 100c in Embodiment 4 is similar to the high-frequency module 100b in Embodiment 3, in that the main surface 12 of the elastic wave filter 1 is in contact with the shielding layer 6, thus suppressing the temperature rise of the elastic wave filter 1.

[0122] Furthermore, in the high-frequency module 100c according to embodiment 4, the electronic component 2 located on the opposite side of the elastic wave filter 1 as viewed from the second metal block 3B includes a power amplifier 111. Therefore, the heat generated in the power amplifier 111 is difficult to be transferred to the elastic wave filter 1, and the temperature rise of the piezoelectric substrate of the elastic wave filter 1 can be suppressed.

[0123] Furthermore, in the high-frequency module 100c according to embodiment 4, the power amplifier 111 and the second metal block 3B are adjacent to each other, so the signal from the power amplifier 111 can be suppressed from affecting other electronic components 2 (jump to other electronic components 2).

[0124] (Implementation Method 5)

[0125] Reference Figure 12 The high-frequency module 100d according to Embodiment 5 will be described. Regarding the high-frequency module 100d according to Embodiment 5, the same reference numerals are used for the same constituent elements as those in the high-frequency module 100c according to Embodiment 4, and descriptions are omitted. Furthermore, the circuit structure of the high-frequency module 100d is the same as that in the reference numerals. Figure 3 The circuit structure of the high-frequency module 100 described in Embodiment 1 is the same.

[0126] The high-frequency module 100d according to Embodiment 5 differs from the high-frequency module 100c according to Embodiment 5 in that it also includes a metal component 4. The metal component 4 is disposed on the main surface 12 of the elastic wave filter 1, opposite to the mounting substrate 9 side.

[0127] A resin layer 5 is disposed on the first main surface 91 of the mounting substrate 9, and covers the outer peripheral surface 13 of the elastic wave filter 1, the outer peripheral surface 43 of the metal component 4, and the outer peripheral surface 33 of each of the plurality of metal blocks 3. A shielding layer 6 covers the resin layer 5, the metal component 4, and the plurality of metal blocks 3. The plurality of metal blocks 3 are in contact with the shielding layer 6. In addition, the metal component 4 is in contact with the shielding layer 6.

[0128] When viewed from the thickness direction D1 of the mounting substrate 9, the metal component 4 is quadrilateral, but is not limited to this. Furthermore, when viewed from the thickness direction D1 of the mounting substrate 9, the metal component 4 is the same size as the elastic wave filter 1, but is not limited to this; it can be larger or smaller than the elastic wave filter 1. The material of the metal component 4 is, for example, copper or a copper alloy. The metal component 4 can be joined to the main surface 12 of the elastic wave filter 1, or it can simply contact it.

[0129] In the high-frequency module 100d according to Embodiment 5, the metal block 3 connected to the ground layer 94 of the mounting substrate 9 is in contact with the shielding layer 6, thus improving the shielding performance. Furthermore, since the high-frequency module 100d according to Embodiment 5 includes multiple metal blocks 3, the shielding performance can be further improved.

[0130] (Implementation Method 6)

[0131] Reference Figure 13 The high-frequency module 100e according to Embodiment 6 will be described. Regarding the high-frequency module 100e according to Embodiment 6, the same reference numerals are used for the same constituent elements as those in the high-frequency module 100d according to Embodiment 5, and the description is omitted.

[0132] The high-frequency module 100e according to Embodiment 6 differs from the high-frequency module 100d according to Embodiment 5 in that the plurality of external connection terminals 80 are ball bumps. Furthermore, the high-frequency module 100e according to Embodiment 6 differs from the high-frequency module 100d according to Embodiment 5 in that it does not possess the resin layer 7 of the high-frequency module 100d according to Embodiment 5. The high-frequency module 100e according to Embodiment 6 may also include a bottom filling portion, which is provided in the gap between the circuit components mounted on the second main surface 92 of the mounting substrate 9 and the second main surface 92 of the mounting substrate 9.

[0133] The material of the ball bumps constituting each of the multiple external connection terminals 80 is, for example, gold, copper, solder, etc.

[0134] Multiple external connection terminals 80 may also coexist, including external connection terminals 80 composed of ball bumps and external connection terminals 80 composed of columnar electrodes.

[0135] The high-frequency module 100e according to embodiment 6 is similar to the high-frequency module 100d according to embodiment 5. The metal block 3 connected to the ground layer 94 of the mounting substrate 9 is in contact with the shielding layer 6, thus improving the shielding performance.

[0136] (Variation example)

[0137] The embodiments 1 to 6 described above are merely one of the various embodiments of the present invention. As long as the purpose of the present invention can be achieved, the embodiments 1 to 6 described above can be modified in various ways according to design, etc.

[0138] The filters in transmitting filter 112A (elastic wave filter 1), transmitting filter 112B, receiving filter 122A, and receiving filter 122B are not limited to bare chip elastic wave filters, but may also have a packaged structure.

[0139] Furthermore, the filters in transmitting filter 112A (elastic wave filter 1), transmitting filter 112B, receiving filter 122A, and receiving filter 122B are not limited to surface elastic wave filters; for example, they could also be BAW (Bulk Acoustic Wave) filters. The resonator in the BAW filter could be, for example, an FBAR (Film Bulk Acoustic Resonator) or an SMR (Solidly Mounted Resonator).

[0140] Furthermore, in the transmit filters 112A and 112B and the receive filters 122A and 122B, each filter in the transmit filter 112A (elastic wave filter 1), transmit filter 112B, receive filter 122A and receive filter 122B is not limited to a trapezoidal filter; for example, it can also be a longitudinally coupled resonator type elastic surface wave filter.

[0141] In addition, the elastic wave filter mentioned above is an elastic wave filter that utilizes surface elastic waves or bulk elastic waves, but it is not limited to these. For example, it can also be an elastic wave filter that utilizes elastic boundary waves, plate waves, etc.

[0142] In addition, the elastic wave filter 1 is electrically connected to the mounting substrate 9 via conductive bumps. However, for the circuit components other than the elastic wave filter 1 among the multiple circuit components mounted on the mounting substrate 9, it is not limited to the case where they are electrically connected to the mounting substrate 9 via conductive bumps. For example, they can also be electrically connected to the mounting substrate 9 via bonding wires.

[0143] The circuit structure of the high-frequency modules 100-100e is not limited to the examples mentioned above. In addition, the high-frequency modules 100-100e may also have a high-frequency front-end circuit corresponding to MIMO (Multi-Input Multi-Output) as the circuit structure.

[0144] Alternatively, the communication device 300 according to Embodiment 1 may also include any one of the high-frequency modules 100a, 100b, 100c, 100d, and 100e to replace the high-frequency module 100.

[0145] In addition, the IC chip 120 containing the low-noise amplifier 121 may include, for example, at least one of the following: a first switch 104, a second switch 105, a third switch 106, and a controller 115, in addition to the low-noise amplifier 121.

[0146] (Way)

[0147] The following methods are disclosed in this specification.

[0148] The high-frequency modules (100, 100a, 100b, 100c, 100e) involved in the first method include: a mounting substrate (9), an elastic wave filter (1), a metal block (3), a resin layer (5), and a shielding layer (6). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other, and has a ground layer (94). The elastic wave filter (1) is mounted on the first main surface (91) of the mounting substrate (9). The metal block (3) is disposed on the first main surface (91) of the mounting substrate (9) and connected to the ground layer (94). The resin layer (5) is disposed on the first main surface (91) of the mounting substrate (9) and covers the outer peripheral surface (13) of the elastic wave filter (1) and the outer peripheral surface (33) of the metal block (3). The shielding layer (6) covers the resin layer (5), the metal block (3), and the main surface (12) of the elastic wave filter (1) opposite to the side of the mounting substrate (9). The metal block (3) is in contact with the shielding layer (6).

[0149] The high-frequency modules (100, 100a, 100b, 100c, 100e) involved in the first method can achieve improved shielding.

[0150] The high-frequency module (100d) involved in the second method includes: a mounting substrate (9), an elastic wave filter (1), a metal component (4), a metal block (3), a resin layer (5), and a shielding layer (6). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other, and has a grounding layer (94). The elastic wave filter (1) is mounted on the first main surface (91) of the mounting substrate (9). The metal component (4) is disposed on the main surface (12) of the elastic wave filter (1) opposite to the side of the mounting substrate (9). The metal block (3) is disposed on the first main surface (91) of the mounting substrate (9) and connected to the grounding layer (94). The resin layer (5) is disposed on the first main surface (91) of the mounting substrate (9) and covers the outer peripheral surface (13) of the elastic wave filter (1), the outer peripheral surface (43) of the metal component (4), and the outer peripheral surface (33) of the metal block (3). The shielding layer (6) covers the resin layer (5), the metal component (4), and the metal block (3). The metal block (3) comes into contact with the shielding layer (6).

[0151] The high-frequency module (100d) involved in the second method can achieve improved shielding.

[0152] For the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the third method, in the first or second method, a plurality of external connection terminals (80) are also provided. The plurality of external connection terminals (80) are disposed on the second main surface (92) of the mounting substrate (9). The plurality of external connection terminals (80) includes a ground terminal (85) connected to the ground layer (94).

[0153] The high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the third method can achieve improved shielding.

[0154] In the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the fourth method, in any one of the first to third methods, the elastic wave filter (1) is the transmitting filter (112A).

[0155] In the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the fourth method, leakage of high-frequency signals (transmit signals) through the transmit filter (112A) can be suppressed.

[0156] For the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the fifth method, the fourth method also includes an electronic component (2). The electronic component (2) is mounted on the first main surface (91) of the mounting substrate (9). Viewed from the metal block (3), the electronic component (2) is located on the opposite side to the elastic wave filter (1).

[0157] In the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the fifth method, it is possible to suppress the influence of the high-frequency signal (transmission signal) transmitted through the transmission filter (112A) on the electronic component (2).

[0158] In the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the sixth method, in the fifth method, the electronic component (2) is a receiving filter (122A).

[0159] In the high-frequency modules (100, 100a, 100b, 100c, 100d, 100e) involved in the sixth method, the isolation between the receiving filter (122A) and the transmitting filter (112A) can be improved.

[0160] In the high-frequency modules (100a, 100c, 100d, 100e) involved in the seventh method, in the fifth method, the electronic component (2) is a power amplifier (111).

[0161] In the high-frequency modules (100a, 100c, 100d, 100e) involved in the seventh method, the heat generated in the power amplifier (111) is difficult to transfer to the transmitting filter (112A), thus suppressing the temperature rise of the transmitting filter (112A).

[0162] In the high-frequency modules (100, 100a) involved in the eighth method, in the fifth method, the electronic component (2) is an IC chip (120) containing a low-noise amplifier (121).

[0163] In the high-frequency modules (100, 100a) involved in the eighth method, the isolation between the low-noise amplifier (121) and the feed filter (112A) can be improved.

[0164] For the high-frequency modules (100b, 100c, 100d, 100e) involved in the ninth method, the fourth method also includes an IC chip (120) containing a low-noise amplifier (121). The IC chip (120) is mounted on the second main surface (92) of the mounting substrate (9). When viewed from the thickness direction (D1) of the mounting substrate (9), the elastic wave filter (1) does not overlap with the IC chip (120).

[0165] In the high-frequency modules (100b, 100c, 100d, 100e) involved in the ninth method, the isolation between the low-noise amplifier (121) and the transmitting filter (112A) can be improved.

[0166] The communication device (300) involved in the tenth method includes a high-frequency module (100, 100a, 100b, 100c, 100d, 100e) and a signal processing circuit (301) of any one of the first to ninth methods. The signal processing circuit (301) is connected to the high-frequency module (100, 100a, 100b, 100c, 100d, 100e).

[0167] In the communication device (300) involved in the tenth method, the shielding can be improved.

[0168] Explanation of reference numerals in the attached figures

[0169] 1…Elastic wave filter; 12…Main surface; 13…Outer peripheral surface; 2…Electronic component; 3…Metal block; 31…Surface; 33…Outer peripheral surface; 4…Metal component; 43…Outer peripheral surface; 5…Resin layer (first resin layer); 51…Main surface; 53…Outer peripheral surface; 6…Shielding layer; 7…Resin layer; 71…Main surface; 73…Outer peripheral surface; 9…Mounting substrate; 91…First main surface; 92…Second main surface; 93…Outer peripheral surface; 80…External connection terminal; 81…Antenna terminal; 82…Signal input terminal; 83…Signal output terminal; 84…Control terminal; 85…Grounding terminal; 100, 100a, 100b, 100c, 100d, 100e…High frequency module; 104…First switch; 140 …Common terminal; 141, 142…Selection terminal; 105…Second switch; 150…Common terminal; 151, 152…Selection terminal; 106…Third switch; 160…Common terminal; 161, 162…Selection terminal; 111…Power amplifier; 112A, 112B…Transmit filter; 113…Output matching circuit; 115…Controller; 120…IC chip; 121…Low noise amplifier; 122A, 122B…Receive filter; 123…Input matching circuit; 300…Communication device; 301…Signal processing circuit; 302…RF signal processing circuit; 303…Baseband signal processing circuit; 310…Antenna; L1, L2…Inductors; L3…Inductor.

Claims

1. A high-frequency module, comprising: The mounting substrate has a first main surface and a second main surface that are opposite to each other, and has a grounding layer; An elastic wave filter is mounted on the first main surface of the mounting substrate. A metal block is disposed on the first main surface of the mounting substrate and is electrically connected to the ground layer. A resin layer is disposed on the first main surface of the mounting substrate and covers at least a portion of the outer peripheral surface of the metal block and the outer peripheral surface of the elastic wave filter; and A shielding layer covers the aforementioned resin layer, the aforementioned metal block, and the main surface of the aforementioned elastic wave filter opposite to the mounting substrate side. The aforementioned metal block comes into contact with the aforementioned shielding layer. When viewed from the thickness direction of the mounting substrate, the shape of the metal block includes curves or broken lines.

2. The high-frequency module according to claim 1, wherein, It also has: Antenna terminals; Receiver filter; and The first switch is electrically connected to the aforementioned elastic wave filter, the aforementioned receiving filter, and the aforementioned antenna terminal.

3. The high-frequency module according to claim 1 or 2, wherein, It also has: The outer peripheral surface of the aforementioned metal block is covered by the aforementioned resin layer.

4. The high-frequency module according to claim 3, wherein, It also has: The thickness of the metal block in the thickness direction of the mounting substrate is greater than the thickness of the elastic wave filter.

5. The high-frequency module according to claim 4, wherein, It also has multiple external connection terminals disposed on the second main surface of the mounting substrate. The aforementioned external connection terminals include grounding terminals that are electrically connected to the aforementioned grounding layer.

6. The high-frequency module according to claim 5, wherein, It also includes electronic components, which are mounted on the first main surface of the mounting substrate. When viewed from any direction within the plane, the aforementioned elastic wave filter, the aforementioned metal block, and the aforementioned electronic components have portions that overlap in this order.

7. The high-frequency module according to claim 6, wherein, The aforementioned elastic wave filter is a SAW filter or a BAW filter.

8. The high-frequency module according to claim 6, wherein, The aforementioned electronic component is a power amplifier.

9. The high-frequency module according to claim 8, wherein, It also has a second switch that is electrically connected to the aforementioned power amplifier and elastic wave filter.

10. The high-frequency module according to claim 6, wherein, The aforementioned electronic component is an IC chip containing a low-noise amplifier.

11. The high-frequency module according to claim 6, wherein, The aforementioned elastic wave filter is a transmitting filter.

12. The high-frequency module according to claim 1 or 2, wherein, When viewed from the thickness direction of the mounting substrate, the length of the short side of the metal block is shorter than the length of each of the four sides of the elastic wave filter.

13. The high-frequency module according to claim 1 or 2, wherein, It also includes an IC chip mounted on the second main surface of the mounting substrate, the IC chip comprising a low-noise amplifier. When viewed from the thickness direction of the mounting substrate, the elastic wave filter does not overlap with the IC chip.

14. The high-frequency module according to claim 1 or 2, wherein, The first and second end faces of the metal block along its long side are in contact with the shielding layer.

15. The high-frequency module according to claim 1 or 2, wherein, It also has: The thickness of the metal block in the thickness direction of the mounting substrate is greater than the thickness of the elastic wave filter.

16. The high-frequency module according to claim 1 or 2, wherein, It also has multiple external connection terminals disposed on the second main surface of the mounting substrate. The aforementioned external connection terminals include grounding terminals that are electrically connected to the aforementioned grounding layer.

17. The high-frequency module according to claim 1 or 2, wherein, It also includes electronic components, which are mounted on the first main surface of the mounting substrate. When viewed from any direction within the plane, the aforementioned elastic wave filter, the aforementioned metal block, and the aforementioned electronic components have portions that overlap in this order.

18. The high-frequency module according to claim 1 or 2, wherein, The aforementioned elastic wave filter is a SAW filter or a BAW filter.

19. The high-frequency module according to claim 1 or 2, wherein, The aforementioned electronic component is a power amplifier.

20. A communication device comprising: The high-frequency module according to any one of claims 1 to 19; and The signal processing circuit is electrically connected to the aforementioned high-frequency module.

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