Wafer transfer platform and pressure control method thereof, semiconductor apparatus

Abstract

The application discloses a wafer transmission platform and a pressure control method and a semiconductor device thereof. The platform comprises a load lock chamber and a pressure control component. The load lock chamber comprises an upper chamber and a lower chamber. The pressure control component comprises an exhaust pump, an upper exhaust gas path, a lower exhaust gas path, a gas source, an upper backfill gas path and a lower backfill gas path. The platform further comprises a total backfill gas path connected between the gas source and the upper backfill gas path and the lower backfill gas path. The total backfill gas path is provided with a mass flow controller and a first switch valve which are connected in parallel. The mass flow controller is used to control the backfill gas at a preset flow rate to adjust the chamber pressure. The control method comprises the following steps: closing the total backfill gas path to exhaust to a first preset pressure value, opening the mass flow controller to backfill at a preset flow rate to a second preset pressure value, and closing the gas path to detect the pressure stabilization. The pressure precision control is realized, the wafer transmission stability and precision are improved, the particle pollution is reduced, and the production yield is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a wafer transport platform and its pressure control method, as well as semiconductor equipment. Background Technology

[0002] In the ever-evolving semiconductor process equipment, to ensure that wafers can complete the processing flow efficiently and accurately, a sophisticated transport mechanism is typically used to transfer wafers from the external atmospheric environment to the internal process chamber for deposition. After the process is completed, the wafers are then transferred back to the atmospheric environment. Because the process chamber is filled with specific process gases and has a complex and harsh environment, the load-locked chamber, which serves as a transition area, must always be kept highly clean to prevent wafer contamination. At the same time, during the frequent switching between atmospheric and vacuum states in the load-locked chamber, the stability of the internal pressure must be strictly maintained. However, in practical applications, due to the small size of the chamber and the limitations of traditional control methods, pressure fluctuations often occur in the load-locked chamber during frequent switching. This pressure instability not only seriously affects the positioning accuracy of wafer transport but also leads to an increase in particulate matter due to gas disturbances, thereby affecting wafer yield. Therefore, how to achieve precise pressure control of the load-locked chamber during frequent switching between atmospheric and vacuum states while ensuring rapid switching efficiency and effectively suppressing particulate matter generation has become a key technical problem that urgently needs to be solved. Summary of the Invention

[0003] The embodiments of the present invention provide a wafer transfer platform and its pressure control method and semiconductor equipment, which aim to solve the problem that the pressure in the existing load locking chamber is unstable during the frequent switching between atmospheric and vacuum processes, which affects the wafer transfer accuracy and increases the risk of wafer particulate contamination.

[0004] In a first aspect, the present invention provides a wafer transfer platform, comprising: a load locking chamber and a pressure control component, wherein the load locking chamber includes an upper chamber and a lower chamber, and the pressure control component includes a vacuum pump, an upper vacuum air path, a lower vacuum air path, an air source, an upper backfill air path, and a lower backfill air path, wherein the vacuum pump is connected to the upper chamber and the lower chamber respectively through the upper vacuum air path and the lower vacuum air path, and the air source is connected to the upper chamber and the lower chamber respectively through the upper backfill air path and the lower backfill air path; The pressure control component further includes a main backfill gas path, which is connected between the gas source and the upper and lower backfill gas paths. The main backfill gas path is equipped with a mass flow controller and a first switching valve. The mass flow controller and the first switching valve are connected in parallel. The mass flow controller is used to control the backfill gas at a preset flow rate to adjust the pressure of the upper and lower chambers.

[0005] Furthermore, the upper backfill gas path includes at least two independent backfill gas paths, and / or the lower backfill gas path includes at least two independent backfill gas paths, with one end of each independent backfill gas path connected to the total backfill gas path and the other end connected to the corresponding upper or lower chamber.

[0006] Furthermore, each of the independent backfill gas paths includes a fast backfill branch and a slow backfill branch, which are connected in parallel and are both connected between the main backfill gas path and the corresponding upper or lower chamber.

[0007] Furthermore, a diaphragm valve is provided on the fast backfill branch, and a flow-limiting valve and a diaphragm valve are arranged in series on the slow backfill branch.

[0008] Furthermore, both the upper and lower air extraction paths include a fast air extraction branch and a slow air extraction branch, which are connected in parallel and are both connected between the air pump and the corresponding upper or lower chamber.

[0009] Furthermore, a fast suction angle valve is provided on the fast suction branch, and a slow suction angle valve is provided on the slow suction branch. The opening degree of the fast suction angle valve is greater than that of the slow suction angle valve.

[0010] Furthermore, the main backfill air circuit is also equipped with a second switching valve, which is connected in series with the mass flow controller and in parallel with the first switching valve.

[0011] Furthermore, the wafer transfer platform also includes a process chamber and a transfer chamber, the process chamber being connected to the transfer chamber, the transfer chamber being connected to one side of the load locking chamber, and the other side of the load locking chamber being connected to the atmosphere.

[0012] Furthermore, a manual valve, a pressure regulating valve, a pressure detection device, and a filter device are provided between the gas source and the main backfill gas path. The manual valve, the pressure regulating valve, the pressure detection device, and the filter device are sequentially arranged in the gas path between the gas source and the main backfill gas path along the gas flow direction.

[0013] The present invention also provides a control method for a wafer transport platform, applied to the aforementioned wafer transport platform, the method comprising: Close the main backfill air path, open the backfill air path and the extraction air path corresponding to the target chamber, and control the extraction pump to extract air from the target chamber until the pressure in the target chamber reaches the first preset pressure value, wherein the target chamber is the upper chamber or the lower chamber. Close the exhaust gas path corresponding to the target chamber, open the mass flow controller and the backfill gas path corresponding to the target chamber, and use the mass flow controller to control the backfill gas to enter the target chamber through the main backfill gas path and the backfill gas path corresponding to the target chamber at a preset flow rate until the pressure of the target chamber reaches the second preset pressure value. Close the main backfill air path and the backfill air path corresponding to the target chamber, and perform pressure stabilization testing on the target chamber.

[0014] Furthermore, the backfill gas path corresponding to the target chamber includes a fast backfill branch and a slow backfill branch. The slow backfill branch is equipped with a flow-limiting valve and a diaphragm valve connected in series. Opening the backfill gas path corresponding to the target chamber includes: opening only the diaphragm valve of the slow backfill branch corresponding to the target chamber, so that the residual gas in the total backfill gas path and the backfill gas paths corresponding to the target chamber and non-target chambers is reversed and extracted through the flow-limiting valve.

[0015] Furthermore, the air extraction path corresponding to the target chamber includes a parallel fast air extraction branch and a slow air extraction branch. Controlling the air extraction pump to extract air from the target chamber includes: first, opening the slow air extraction branch to extract air from the target chamber until the pressure in the target chamber reaches a third preset pressure value; then, opening the fast air extraction branch to extract air from the target chamber until the pressure in the target chamber reaches the first preset pressure value.

[0016] Furthermore, the wafer transfer platform further includes a transfer chamber and a process chamber, and the method further includes: when in the wafer transfer state, controlling the second preset pressure value to be greater than the pressure of the transfer chamber, and the pressure of the transfer chamber being greater than the pressure of the process chamber.

[0017] Furthermore, the method further includes: when the target chamber is in an idle state, closing the main backfill gas path, opening the extraction gas path corresponding to the target chamber, and controlling the extraction pump to extract gas from the target chamber until the pressure of the target chamber reaches a fourth preset pressure value; closing the extraction gas path corresponding to the target chamber, opening the mass flow controller and the backfill gas path corresponding to the target chamber, and controlling the backfill gas to enter the target chamber at a preset flow rate through the mass flow controller until the pressure of the target chamber reaches a fifth preset pressure value.

[0018] This invention provides a wafer transfer platform and its pressure control method, as well as a semiconductor device. The method involves a structure where a mass flow controller and a first switching valve are connected in parallel on the main backfill gas path. The control method first closes the main backfill gas path and opens the backfill gas path and the extraction gas path corresponding to the target chamber for extraction. This removes residual gas in the backfill gas path during extraction, eliminating interference from residual gas in the pipeline on subsequent backfill flow control. Then, the extraction gas path is closed, and the mass flow controller and the backfill gas path corresponding to the target chamber are opened. The mass flow controller precisely controls the backfill gas to enter the target chamber at a preset flow rate until a second preset flow rate is reached. The pressure value avoids pressure overshoot or fluctuations caused by uncontrollable flow when relying solely on a combination of switching valves and flow limiting valves for backfilling. Finally, the main backfilling air path and the backfilling air path are shut down for pressure stabilization testing to ensure that the chamber pressure is stable at the target value. Thus, during the frequent switching between atmospheric and vacuum in the load-locked chamber, both backfilling speed and pressure control accuracy are achieved. This effectively solves the problems of unstable pressure, affecting wafer transfer accuracy and increasing the risk of wafer particulate contamination during frequent switching between atmospheric and vacuum in existing transfer chambers. It achieves the effects of improving backfilling efficiency, stabilizing wafer transfer pressure, ensuring wafer transfer accuracy, and reducing wafer particulate contamination. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 A schematic block diagram of a wafer transport platform according to an embodiment of the present invention is shown; Figure 2 A partially enlarged schematic diagram of the wafer transport platform according to an embodiment of the present invention is shown; Figure 3 This diagram illustrates the residual gas flow direction of the wafer transport platform according to an embodiment of the present invention. Figure 4 A schematic diagram of the chamber layout of the wafer transport platform according to an embodiment of the present invention is shown; Figure label: 100. Load locking chamber; 101. Upper chamber; 102. Lower chamber; 200. Transfer chamber; 300. Process chamber; 10. Upper evacuation air path; 11. First upper rapid evacuation branch; 12. First upper slow evacuation branch; 20. Lower evacuation air path; 21. First lower rapid evacuation branch; 22. First lower slow evacuation branch; 30. Upper backfill air path; 31. First upper backfill air path; 311. First upper rapid backfill branch; 312. 32. First upper slow backfill branch; 32. Second upper backfill gas branch; 321. Second upper fast backfill branch; 322. Second upper slow backfill branch; 40. Lower backfill gas branch; 41. First lower backfill gas branch; 411. First lower fast backfill branch; 412. First lower slow backfill branch; 42. Second lower backfill gas branch; 421. Second lower fast backfill branch; 422. Second lower slow backfill branch; 50. Main backfill gas branch; 60. Air pump; 70. Gas source. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] The directional terms used in this invention, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding this invention, and not for limiting it. Furthermore, in the drawings, structures that are similar or identical are indicated by the same reference numerals.

[0023] As semiconductor manufacturing process nodes continue to shrink, more stringent requirements are placed on the stability and cleanliness of the wafer transfer process. As a bridge connecting the atmospheric pressure environment and the vacuum process environment, the stability of pressure control in the load-locking chamber during frequent switching between atmospheric and vacuum environments directly determines the wafer transfer quality. However, during frequent switching between vacuuming and backfilling gas, if the flow rate of the backfilling gas cannot be precisely and flexibly controlled, it is easy to cause fluctuations or overshoots in the internal pressure of the chamber. This pressure instability will not only interfere with the positioning accuracy of the robotic arm when gripping and placing the wafer, but will also cause particles attached to the inside of the chamber to be suspended and attached to the wafer surface by the turbulent airflow, thereby affecting the wafer transfer accuracy and significantly increasing the risk of wafer particulate contamination.

[0024] To this end, embodiments of the present invention provide a wafer transfer platform and its pressure control method and semiconductor equipment. By setting a mass flow controller and a first switching valve in parallel on the main backfill gas path 50, and cooperating with a control method that first removes residual gas from the pipeline and then uses the mass flow controller to precisely control the pressure for backfilling, rapid backfilling and precise pressure control are achieved when the load locking chamber 100 frequently switches between atmospheric and vacuum conditions, thereby stabilizing the wafer transfer pressure and reducing the risk of wafer particulate contamination.

[0025] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0026] This invention provides a wafer transport platform, and the overall layout and structure of the wafer transport platform and the connection relationship of each gas path will be described in detail below.

[0027] The load-locking chamber 100 (LL) includes an upper chamber 101 and a lower chamber 102, which are isolated from each other and are used to independently carry and transport wafers under different pressure environments.

[0028] The transfer chamber 200 (TM) is connected to one side of the load-locked chamber 100, the process chamber 300 (PM) is connected to the transfer chamber 200, and the other side of the load-locked chamber 100 is connected to the atmosphere, thereby forming a wafer transfer path from the atmosphere through the load-locked chamber 100 and the transfer chamber 200 to the process chamber 300.

[0029] The upper air extraction path 10 is connected between the air pump 60 and the upper chamber 101. It includes a first upper fast air extraction branch 11 and a first upper slow air extraction branch 12 connected in parallel. The first upper fast air extraction branch 11 is equipped with a first upper angle valve FAV, and the first upper slow air extraction branch 12 is equipped with a second upper angle valve SAV, so as to realize the staged air extraction control of the upper chamber 101.

[0030] The lower-level air extraction passage 20 is connected between the air extraction pump 60 and the lower-level chamber 102. It includes a first lower fast air extraction branch 21 and a first lower slow air extraction branch 22 connected in parallel. The first lower fast air extraction branch 21 is equipped with a first lower angle valve FAV', and the first lower slow air extraction branch 22 is equipped with a second lower angle valve SAV', which are also used to realize the staged air extraction control of the lower-level chamber 102.

[0031] The upper backfill air passage 30 is connected between the main backfill air passage 50 and the upper chamber 101. It includes a first upper backfill air passage 31 and a second upper backfill air passage 32. The first upper backfill air passage 31 includes a first upper fast backfill branch 311 and a first upper slow backfill branch 312 connected in parallel. The first upper fast backfill branch 311 is equipped with a first upper diaphragm valve VU1, and the first upper slow backfill branch 312 is equipped with a first upper diaphragm valve VU2 and a first upper flow limit valve VU3 connected in series. The second upper backfill air passage 32 includes a second upper fast backfill branch 321 and a second upper slow backfill branch 322 connected in parallel. The second upper fast backfill branch 321 is equipped with a second upper diaphragm valve VU1', and the second upper slow backfill branch 322 is equipped with a second upper diaphragm valve VU2' and a second upper flow limit valve VU3' connected in series.

[0032] The lower backfill gas path 40 is connected between the main backfill gas path 50 and the lower chamber 102. It includes a first lower backfill gas path 41 and a second lower backfill gas path 42. The first lower backfill gas path 41 includes a first lower fast backfill branch 411 and a first lower slow backfill branch 412 connected in parallel. The first lower fast backfill branch 411 is equipped with a first lower diaphragm valve VD1, and the first lower slow backfill branch 412 is equipped with a first lower diaphragm valve VD2 and a first lower flow limiting valve VD3 connected in series. The second lower backfill gas path 42 includes a second lower fast backfill branch 421 and a second lower slow backfill branch 422 connected in parallel. The second lower fast backfill branch 421 is equipped with a second lower diaphragm valve VD1', and the second lower slow backfill branch 422 is equipped with a second lower diaphragm valve VD2' and a second lower flow limiting valve VD3' connected in series.

[0033] The main backfill air passage 50 is connected between the air source 70 and the upper backfill air passage 30 and the lower backfill air passage 40. It is equipped with a first switching valve ZV1 and a mass flow controller MFC connected in parallel, and the mass flow controller MFC is connected in series with a second switching valve ZV2 to achieve the synergy of rapid backfilling and precise pressure control.

[0034] In addition, between the gas source 70 and the main backfill gas path 50, a manual valve MV, a pressure regulating valve RV, a pressure detection device PG, and a filter device FILTER are sequentially installed along the gas flow direction for the on / off, pressure regulation, detection, and filtration of the gas source 70.

[0035] As stated above, with reference to Figures 1-4This invention provides a wafer transfer platform, including a load locking chamber 100 and a pressure control component. The load locking chamber 100 includes an upper chamber 101 and a lower chamber 102. The pressure control component includes a vacuum pump 60, an upper vacuum air passage 10, a lower vacuum air passage 20, an air source 70, an upper backfill air passage 30, and a lower backfill air passage 40. The vacuum pump 60 is connected to the upper chamber 101 and the lower chamber 102 through the upper vacuum air passage 10 and the lower vacuum air passage 20, respectively. The air source 70 is connected to the upper backfill air passage 30 and the lower backfill air passage 40. Gas passage 40 is connected to the upper chamber 101 and the lower chamber 102 respectively; wherein, the pressure control assembly further includes a main backfill gas passage 50, which is connected between the gas source 70 and the upper backfill gas passage 30 and the lower backfill gas passage 40. The main backfill gas passage 50 is equipped with a mass flow controller MFC and a first switching valve ZV1. The mass flow controller MFC and the first switching valve ZV1 are connected in parallel. The mass flow controller MFC is used to control the backfill gas at a preset flow rate to adjust the pressure of the upper chamber 101 and the lower chamber 102.

[0036] Specifically, the load locking chamber 100 includes an upper chamber 101 and a lower chamber 102. Both the upper chamber 101 and the lower chamber 102 have sealed spaces to accommodate wafers, used to support wafers under different pressure environments. The upper chamber 101 and the lower chamber 102 are arranged vertically and isolated from each other to achieve independent pressure control. The pressure control assembly includes a vacuum pump 60, an upper vacuum passage 10, a lower vacuum passage 20, an air source 70, an upper backfill passage 30, a lower backfill passage 40, and a main backfill passage 50. The vacuum pump 60 has the function of generating vacuum suction force. The vacuum pump 60 is connected to the upper chamber 101 through the upper vacuum passage 10 and to the lower chamber 102 through the lower vacuum passage 20, so as to perform vacuum operations on the upper chamber 101 and the lower chamber 102 respectively. Gas source 70 provides the inert gas or nitrogen required for backfilling. Gas source 70 is connected to upper chamber 101 through upper backfill gas passage 30 and lower chamber 102 through lower backfill gas passage 40 to replenish gas in the chamber. Main backfill gas passage 50 connects gas source 70 to upper backfill gas passage 30 and lower backfill gas passage 40, serving as a common channel for backfill gas. Main backfill gas passage 50 is equipped with mass flow controller MFC and first switching valve ZV1. Mass flow controller MFC can accurately control gas flow according to set value. First switching valve ZV1 has the function of opening and closing gas passage. First switching valve ZV1 can be a diaphragm valve. Mass flow controller MFC and first switching valve ZV1 are connected in parallel to form two parallel gas passages.

[0037] Specifically, during the evacuation phase, closing the main backfill gas path 50 and opening the evacuation gas path removes residual gas from the backfill pipeline, preventing it from interfering with subsequent pressure control. During the backfilling phase, closing the first switching valve ZV1 and opening the mass flow controller MFC allows gas to enter the chamber. Because the mass flow controller MFC precisely controls the gas flow, it avoids the uncontrollable flow problems associated with traditional methods relying solely on a combination of switching valves and flow restrictors, thus achieving a stable increase in chamber pressure. By setting the mass flow controller MFC and the first switching valve ZV1 in parallel on the main backfill gas path 50, and combining this with the control logic of first evacuating residual gas and then precisely backfilling, a balance between backfilling speed and pressure control accuracy is achieved. This effectively solves the problem of unstable pressure in existing transfer chambers during frequent switching between atmospheric and vacuum conditions, achieving stable wafer transfer pressure, ensuring wafer transfer accuracy, and reducing wafer particulate contamination.

[0038] In one embodiment, the upper backfill air path 30 includes at least two independent backfill air paths, and / or the lower backfill air path 40 includes at least two independent backfill air paths, with one end of each independent backfill air path connected to the total backfill air path 50 and the other end connected to the corresponding upper chamber 101 or lower chamber 102.

[0039] Specifically, the upper backfill gas path 30 includes at least two independent backfill gas paths, each with its own independent gas flow channel for individually supplying backfill gas to the chamber. One end of each independent backfill gas path is connected to the main backfill gas path 50, and the other end is connected to the upper chamber 101, allowing the gas supplied by the main backfill gas path 50 to be diverted into the upper chamber 101. The lower backfill gas path 40 also includes at least two independent backfill gas paths, one end of each connected to the main backfill gas path 50, and the other end connected to the lower chamber 102, enabling the diversion of gas supply to the lower chamber 102. Specifically, the upper backfill gas path 30 and the lower backfill gas path 40 are each configured as multiple independent backfill gas paths. Different numbers of backfill gas paths can be activated based on pressure changes within the chamber. When rapid backfilling is required, multiple paths can be activated simultaneously to increase gas flow; when slow, precise backfilling is needed, only a single path can be activated to reduce gas flow. This multi-path allocation provides more flexible flow regulation. By setting up multiple independent backfill gas paths, multi-level adjustment of the backfill flow rate is achieved, further improving the flexibility and pressure control accuracy of the backfilling process, effectively shortening the backfilling time and avoiding pressure overshoot, thereby improving the overall operating efficiency of the wafer transfer platform.

[0040] In this embodiment, each independent backfill gas path includes a fast backfill branch and a slow backfill branch. The fast backfill branch and the slow backfill branch are arranged in parallel and are both connected between the total backfill gas path 50 and the corresponding upper chamber 101 or lower chamber 102.

[0041] Specifically, each independent backfill gas path includes a fast backfill branch and a slow backfill branch. The fast backfill branch has a large gas flow capacity, used to inject a large amount of gas into the chamber in a short time to quickly increase the pressure. The slow backfill branch has a smaller gas flow capacity, used to inject gas into the chamber at a slower rate to finely regulate the pressure. The fast and slow backfill branches are arranged in parallel and are connected between the main backfill gas path 50 and the corresponding upper chamber 101 or lower chamber 102, forming a parallel dual-channel backfill structure. Specifically, when a rapid increase in chamber pressure is needed in the initial stage of backfilling, the fast backfill branch is opened for high-flow backfilling. When the chamber pressure approaches the target value, the fast backfill branch is closed and the slow backfill branch is opened for fine replenishment with a small flow. This combination of fast and slow methods ensures backfilling efficiency while avoiding pressure overshoot. By setting up parallel fast backfill branches and slow backfill branches in each independent backfill gas path, the backfill process can be controlled in stages. While ensuring the backfill speed, the stability of pressure control is greatly improved, and the impact of pressure fluctuations on the wafer is further reduced.

[0042] Reference Figure 2 In specific implementation, a diaphragm valve is provided on the fast backfill branch, and a flow limiting valve and a diaphragm valve are arranged in series on the slow backfill branch.

[0043] Specifically, a diaphragm valve is installed on the fast backfill branch. The diaphragm valve features rapid on / off switching and good sealing performance, and is used to control the opening and closing of the fast backfill branch. A flow-limiting valve and a diaphragm valve are connected in series on the slow backfill branch. The flow-limiting valve has a throttling function, used to limit the gas flow to achieve slow backfilling. Specifically, it limits the gas flow by reducing the pipe orifice diameter. The diaphragm valve controls the on / off switching of the slow backfill branch. The flow-limiting valve and the diaphragm valve, connected in series, together form the slow backfill channel. It should be noted that the slow backfill branch is not limited to the structure of a flow-limiting valve and a diaphragm valve connected in series. It can also be a structure using a throttling orifice plate and a ball valve connected in series, or an implementation using a needle valve as the sole slow backfill branch. Any structure that can limit the gas flow to achieve the purpose of slow backfilling is within the scope of this patent protection. Specifically, the fast backfill branch uses a diaphragm valve to achieve instantaneous switching of large flow rates, while the slow backfill branch uses a flow-limiting valve and a diaphragm valve in combination to achieve precise control of small flow rates. The two valves work together to achieve the switching between fast and slow backfilling processes. By installing a diaphragm valve in the fast backfill branch and a flow-limiting valve and a diaphragm valve connected in series in the slow backfill branch, a simple and reliable fast / slow backfilling method is provided, ensuring rapid response and fine adjustment capabilities during the backfilling process.

[0044] In one embodiment, both the upper air extraction path 10 and the lower air extraction path 20 include a fast air extraction branch and a slow air extraction branch. The fast air extraction branch and the slow air extraction branch are arranged in parallel and are both connected between the air pump 60 and the corresponding upper chamber 101 or lower chamber 102.

[0045] Specifically, both the upper-level evacuation path 10 and the lower-level evacuation path 20 include a fast-speed evacuation branch and a slow-speed evacuation branch. The fast-speed evacuation branch has a higher evacuation rate, used to quickly reduce the chamber pressure in a short time. The slow-speed evacuation branch has a lower evacuation rate, used to steadily reduce the chamber pressure at a slower rate. The fast-speed and slow-speed evacuation branches are arranged in parallel and are both connected between the evacuation pump 60 and the corresponding upper-level chamber 101 or lower-level chamber 102, forming a parallel dual-channel evacuation structure. Specifically, when the chamber pressure is high at the beginning of evacuation, the slow-speed evacuation branch is activated for low-speed evacuation to prevent excessive airflow from causing wafer slippage or particle lifting. Once the chamber pressure drops to a safe range, the fast-speed evacuation branch is activated for high-speed evacuation to quickly reach the target vacuum level. This slow-then-fast evacuation strategy balances wafer safety and evacuation efficiency. By setting up parallel fast and slow extraction branches in the extraction air path, the extraction process is controlled in stages, which effectively avoids damage to the wafer and particulate matter contamination caused by airflow disturbance in the early stage of extraction, while ensuring the overall extraction efficiency.

[0046] In this embodiment, a fast suction angle valve is provided on the fast suction branch, and a slow suction angle valve is provided on the slow suction branch. The opening degree of the fast suction angle valve is greater than that of the slow suction angle valve.

[0047] Specifically, a fast-acting suction angle valve is provided on the fast-acting suction branch. This valve has a large gas flow capacity and is used to control the on / off state of the fast-acting suction branch and provide a high-flow suction channel. A slow-acting suction angle valve is provided on the slow-acting suction branch. This valve has a smaller gas flow capacity and is used to control the on / off state of the slow-acting suction branch and provide a low-flow suction channel. The opening degree of the fast-acting suction angle valve is greater than that of the slow-acting suction angle valve. The opening degree directly determines the gas flow cross-sectional area and suction rate of the valve. It should be noted that the distinction between the fast-acting and slow-acting suction angle valves is not limited to the difference in opening degree; it can also refer to angle valves with different nominal diameters or different flow conductances. Any valve combination that can achieve switching between different suction rates is within the scope of this patent protection. Specifically, by selecting angle valves with different opening degrees as fast-speed and slow-speed suction angle valves, the gas flow cross-sectional area is small when the slow-speed suction angle valve is opened, thus achieving slow suction; while the gas flow cross-sectional area is large when the fast-speed suction angle valve is opened, thus achieving fast suction. The structure is simple and easy to control. By setting fast-speed and slow-speed suction angle valves with different opening degrees, a well-defined and easy-to-implement fast and slow suction scheme is provided, ensuring the safety and efficiency of the suction process.

[0048] In one embodiment, the main backfill gas path 50 is further provided with a second switching valve, which is connected in series with the mass flow controller MFC and in parallel with the first switching valve ZV1.

[0049] Specifically, the main backfill gas path 50 is also equipped with a second switching valve ZV2. The second switching valve ZV2 has the function of opening and closing the gas path, and is used to control the on / off state of the branch where the mass flow controller (MFC) is located. The second switching valve ZV2 is connected in series with the mass flow controller (MFC) to form a mass flow control branch. This mass flow control branch is then connected in parallel with the first switching valve ZV1, so that the main backfill gas path 50 forms a rapid backfill channel composed solely of the first switching valve ZV1 and a precise backfill channel composed of the second switching valve ZV2 and the mass flow controller (MFC) connected in series. In this embodiment, the first and second switching valves can be diaphragm valves. Specifically, when rapid backfilling is required, the first switching valve ZV1 is opened and the second switching valve ZV2 is closed, allowing gas to flow directly into the chamber in large quantities without passing through the mass flow controller (MFC). When precise pressure control is required, the first switching valve ZV1 is closed and the second switching valve ZV2 is opened, forcing the gas to pass through the mass flow controller (MFC) for flow control before entering the chamber. The second switching valve ZV2 isolates the mass flow controller (MFC) from the gas source 70 when not in operation, preventing long-term pressure damage. Alternatively, the first switching valve ZV1, the second switching valve ZV2, and the mass flow controller (MFC) can all be opened. By adding the second switching valve ZV2 in series with the mass flow controller (MFC) on the main backfill gas path 50, the mass flow controller (MFC) is protected, its service life is extended, and the switching between the rapid backfilling channel and the precise backfilling channel is made more thorough and reliable.

[0050] Reference Figure 4 In one embodiment, the wafer transfer platform further includes a process chamber 300 and a transfer chamber 200, wherein the process chamber 300 is connected to the transfer chamber 200, the transfer chamber 200 is connected to one side of the load locking chamber 100, and the other side of the load locking chamber 100 is connected to the atmosphere.

[0051] Specifically, the wafer transport platform also includes a process chamber 300, a transport chamber 200, an atmospheric robot, and a vacuum robot. The process chamber 300 has the function of performing processes such as thin film deposition or etching on the wafer. The transport chamber 200 has the function of transferring wafers between different chambers. The atmospheric robot has the function of grasping and transporting wafers in an atmospheric environment. The vacuum robot has the function of grasping and transporting wafers in a vacuum environment. The process chamber 300 is connected to the transport chamber 200. The transport chamber 200 is connected to one side of the load locking chamber 100. The other side of the load locking chamber 100 is connected to the atmosphere. The atmospheric robot is located between the atmospheric side and the load locking chamber 100. The vacuum robot is located between the load locking chamber 100, the transport chamber 200, and the process chamber 300, thereby constructing a complete wafer transport path from the atmospheric environment to the vacuum environment. Specifically, the load-locking chamber 100 serves as a transition zone between atmosphere and vacuum. When a wafer needs to enter from the atmospheric side, the load-locking chamber 100 is backfilled to atmospheric pressure and connected to the atmospheric side. An atmospheric robot places the wafer into the load-locking chamber 100, and then the load-locking chamber 100 is evacuated to match the pressure of the transfer chamber 200. A vacuum robot then removes the wafer from the load-locking chamber 100 and delivers it to the process chamber 300 via the transfer chamber 200. This layout and robot operation ensure that the transfer chamber 200 and the process chamber 300 do not need to be exposed to the atmospheric environment, maintaining the cleanliness and stability of the process environment. By setting up the process chamber 300 and the transfer chamber 200 and establishing a specific connection with the load-locking chamber 100, and coordinating the atmospheric robot and the vacuum robot to handle the wafer on the atmospheric side and the vacuum side respectively, a smooth transition of the wafer between atmospheric pressure and vacuum environments is achieved, ensuring the vacuum level and cleanliness of the process chamber 300 and improving the overall process quality.

[0052] In one embodiment, a manual valve, a pressure regulating valve, a pressure detection device, and a filter device are further provided between the gas source 70 and the main backfill gas path 50. The manual valve, the pressure regulating valve, the pressure detection device, and the filter device are sequentially arranged in the gas path between the gas source 70 and the main backfill gas path 50 along the gas flow direction.

[0053] Specifically, a manual valve MV, a pressure regulating valve RV, a pressure detection device PG, and a filter device FILTER are also provided between the gas source 70 and the main backfill gas circuit 50. The manual valve MV has the function of manual operation to shut off the gas source 70 during equipment maintenance or shutdown. The pressure regulating valve RV has the function of automatically adjusting the outlet pressure to reduce the pressure of the high-pressure gas from the gas source 70 and stabilize it to the working pressure required for backfilling. The pressure detection device PG has the function of measuring the gas pressure in real time to monitor whether the gas pressure after the pressure regulating valve meets the standard. The filter device FILTER has the function of intercepting impurity particles in the gas to filter out dust and oil in the backfill gas. The manual valve MV, the pressure regulating valve RV, the pressure detection device PG, and the filter device FILTER are arranged sequentially in the gas circuit between the gas source 70 and the main backfill gas circuit 50 along the gas flow direction to ensure that the gas enters the main backfill gas circuit 50 after passing through on / off control, pressure reduction and stabilization, pressure monitoring, and filtration and purification in sequence. Specifically, the raw gas pressure provided by the gas source 70 often fluctuates significantly and may contain impurities. After the pressure is stabilized by a pressure regulating valve, the mass flow controller (MFC) can accurately control the flow rate under a stable inlet pressure. The filter device prevents impurities from entering the chamber and contaminating the wafer, and the pressure detection device provides pressure feedback to the operator to ensure safe system operation. By sequentially installing a manual valve MV, a pressure regulating valve RV, a pressure detection device PG, and a filter device (FILTER) between the gas source 70 and the main backfill gas path 50, the pressure stability and cleanliness of the backfill gas are ensured. This provides a reliable gas source 70 for the precise pressure control of the mass flow controller (MFC), while simultaneously improving system safety and wafer processing yield.

[0054] This invention also provides a control method for a wafer transport platform, applied to the wafer transport platform described in the above embodiments. This wafer transport platform has been described in detail in the above embodiments, and for the sake of brevity, it will not be repeated here. The method includes steps S1-S3.

[0055] S1. Close the main backfill air passage 50, open the backfill air passage and the extraction air passage corresponding to the target chamber, and control the extraction pump 60 to extract air from the target chamber until the pressure of the target chamber reaches the first preset pressure value, wherein the target chamber is the upper chamber 101 or the lower chamber 102. Specifically, when controlling the pressure of the target chamber, the residual gas removal and evacuation steps are performed first. Taking the upper chamber 101 as the target chamber, the first switch valve ZV1 and the second switch valve ZV2 on the main backfill gas line 50 are closed. At the same time, the diaphragm valves VU1 and VU2 on the upper backfill gas line 30 are opened, and the angle valves FAV and SAV on the upper evacuation gas line 10 are opened. The evacuation pump 60 is controlled to evacuate the upper chamber 101 until the pressure of the upper chamber 101 reaches the first preset pressure value. During this process, since the main backfill gas line 50 is closed and the upper backfill gas line 30 is open, the residual gas in the upper backfill gas line 30 will be drawn away in the reverse direction under the negative pressure of the evacuation pump 60, thereby removing the residual gas in the backfill pipeline. This prevents the residual gas from flowing into the chamber uncontrollably during subsequent backfilling and interfering with the accurate pressure control of the mass flow controller, thus providing a clean pipeline environment for subsequent accurate backfilling. Similarly, the lower chamber 102 also undergoes the same control actions, which will not be described in detail here.

[0056] S2. Close the exhaust gas path corresponding to the target chamber, open the mass flow controller and the backfill gas path corresponding to the target chamber, and control the backfill gas to enter the target chamber through the main backfill gas path 50 and the backfill gas path corresponding to the target chamber at a preset flow rate using the mass flow controller, until the pressure of the target chamber reaches the second preset pressure value. Specifically, the precise backfilling step is then executed. The angle valves FAV and SAV on the upper-level evacuation air passage 10 are closed to stop evacuation. Simultaneously, the second switching valve ZV2 and the mass flow controller MFC on the main backfilling air passage 50 are opened, while the diaphragm valves VU1 and VU2 on the upper-level backfilling air passage 30 remain open. At this time, the backfill gas supplied by the gas source 70 enters the upper chamber 101 via the main backfilling air passage 50 and the upper-level backfilling air passage 30. During this process, the mass flow controller MFC precisely controls the flow rate of the backfill gas at a preset flow rate, causing the pressure in the upper chamber 101 to rise steadily until it reaches the second preset pressure value. This step solves the problem of uncontrollable flow rate and pressure overshoot or fluctuations caused by relying solely on the combination of diaphragm valves and flow restrictors in traditional backfilling methods. The closed-loop regulation capability of the mass flow controller achieves precise supply of backfill gas, ensuring that the chamber pressure can accurately and stably reach the target value. Similarly, the lower chamber 102 undergoes the same control action, which will not be described further here.

[0057] S3. Close the main backfill air path 50 and the backfill air path corresponding to the target chamber, and perform pressure stabilization detection on the target chamber.

[0058] Specifically, the final step involves a pressure stabilization test. The first switching valve ZV1 and the second switching valve ZV2 on the main backfill air path 50 are closed, along with the diaphragm valves VU1 and VU2 on the upper backfill air path 30. This completely seals the upper chamber 101, and a pressure stabilization test is performed on the upper chamber 101 for several seconds to determine if the pressure is stable within a preset error range. This step promptly detects any minor leaks in the chamber and air paths, ensuring absolute pressure stability during subsequent wafer transfer. This prevents deviations in wafer gripping or placement caused by pressure fluctuations, thus guaranteeing transfer accuracy and reducing the risk of wafer contamination. Similarly, the lower chamber 102 undergoes the same control actions, which will not be described further here.

[0059] Reference Figure 3 In one embodiment, the backfill gas path corresponding to the target chamber includes a fast backfill branch and a slow backfill branch. The slow backfill branch is equipped with a flow-limiting valve and a diaphragm valve connected in series. Step S1 is specifically performed as follows: Only the diaphragm valve of the slow backfill branch corresponding to the target chamber is opened, so that the residual gas in the total backfill gas path and the backfill gas paths corresponding to the target chamber and non-target chambers is drawn out in reverse through the flow limiting valve.

[0060] Specifically, when controlling the pressure in the target chamber, the first step is to perform residual gas removal and evacuation, such as... Figure 3 The red arrows indicate the direction of residual gas flow. Taking the upper chamber 101 as the target chamber, the first switch valve ZV1 and the second switch valve ZV2 on the main backfill gas path 50 are closed. At the same time, only the diaphragm valves VU2 and VU2' on the slow backfill branch of the upper backfill gas path 30 are opened, while the diaphragm valves on other backfill branches remain closed. That is, VU1 and VU1', VD1, VD2, VD1', and VD2' are all closed. The upper evacuation gas path 10 is opened, and the evacuation pump 60 is controlled to evacuate the upper chamber 101 until the pressure in the upper chamber 101 reaches the first preset pressure. During this process, since the main backfill gas path 50 is closed and only the slow backfill branch is open, the residual gas in the pipelines between the first switching valve ZV1 and the second switching valve ZV2 and the diaphragm valves of each backfill gas path is collected and then reversed and extracted through the flow-limiting valves VU3 and VU3' on the slow backfill branch. Because the flow-limiting valves have a throttling effect, they can control the flow rate of the reverse extraction, preventing excessive airflow from disturbing the chamber. This removes all residual gas from the backfill pipeline, avoiding affecting the precise pressure control of the mass flow controller, providing a clean pipeline environment for subsequent precise backfilling, and improving pressure control accuracy. Similarly, the lower chamber 102 can also undergo the same control action, which will not be elaborated here.

[0061] Furthermore, during the evacuation process, when controlling the evacuation pump to evacuate the target chamber, the pressure in the target chamber can be reduced to below the first preset pressure value. That is, during the evacuation phase, the chamber pressure is slightly over-evacuated to a pressure level below the target value. Then, the evacuation gas path corresponding to the target chamber is closed, and the mass flow controller and the backfill gas path corresponding to the target chamber are opened. The mass flow controller slowly replenishes the target chamber with backfill gas at a preset flow rate, causing the chamber pressure to gradually rise from the level below the target value until it precisely reaches the first preset pressure value. This control method of over-evacuation followed by replenishment utilizes the ability of the mass flow controller to precisely control the replenishment gas flow rate, allowing the chamber pressure to smoothly approach the target value from the low side. This avoids the problem of the pressure being difficult to stop precisely due to the evacuation inertia when approaching from the high side, thereby further improving the accuracy and stability of pressure control.

[0062] During the backfilling process, the first switch valve ZV1 and the second switch valve ZV2 on the main backfill gas line can be opened simultaneously. At this time, the backfill gas enters the target chamber through the high-flow channel of the first switch valve ZV1 and the branch of the mass flow controller MFC. Since there is no throttling restriction in the channel of the first switch valve ZV1, the gas can rush into the chamber in large quantities and quickly, causing the chamber pressure to rise rapidly. When the chamber pressure approaches the second preset pressure value, the first switch valve ZV1 is closed, leaving only the second switch valve ZV2 and the mass flow controller MFC open. The mass flow controller MFC slowly replenishes the target chamber with backfill gas at a preset flow rate, so that the chamber pressure rises precisely from a level close to the target value to the second preset pressure value. This backfilling strategy of fast first and slow later achieves rapid pressure rise in the early stage of backfilling by using the high-flow channel of the first switch valve ZV1, which greatly shortens the backfilling time. In the later stage of backfilling, the mass flow controller MFC is switched to control the pressure precisely, avoiding pressure overshoot. Thus, precise pressure control is achieved while improving backfilling efficiency.

[0063] In one embodiment, step S1 is specifically performed as follows: first, the slow-speed suction branch is opened to evacuate the target chamber until the pressure in the target chamber reaches a third preset pressure value; then, the fast-speed suction branch is opened to evacuate the target chamber until the pressure in the target chamber reaches the first preset pressure value.

[0064] Specifically, during the process of controlling the vacuum pump 60 to evacuate the target chamber, a phased evacuation strategy of slow-to-fast evacuation is adopted. Taking the upper chamber 101 as an example, the slow-speed evacuation valve SAV on the upper evacuation air path 10 is first opened, and the upper chamber 101 is evacuated at a relatively low evacuation rate through the slow evacuation branch until the pressure in the upper chamber 101 reaches the third preset pressure value. Then, the fast-speed evacuation valve FAV is opened, and the upper chamber 101 is evacuated at a higher evacuation rate through the fast evacuation branch until the first preset pressure value is reached. This phased strategy solves the problem of violent airflow disturbance caused by direct high-speed evacuation when the chamber pressure is high in the initial stage of evacuation. Slow evacuation first can smoothly reduce the chamber pressure and prevent excessive airflow from causing wafer slippage or stirring up particles attached to the chamber. Fast evacuation later ensures the overall evacuation efficiency, taking into account both the safety of wafer transfer and production efficiency. Similarly, the lower chamber 102 is controlled in the same way, which will not be described in detail here.

[0065] In one embodiment, the control method of the wafer transfer platform further includes: when in the wafer transfer state, controlling the second preset pressure value to be greater than the pressure of the transfer chamber 200, wherein the pressure of the transfer chamber 200 is greater than the pressure of the process chamber 300.

[0066] Specifically, when the wafer transport platform is in wafer transport mode, a pressure gradient is constructed between the various chambers by setting different target pressure values. Specifically, the second preset pressure value is controlled to be greater than the pressure of the transport chamber 200, and the pressure of the transport chamber 200 is controlled to be greater than the pressure of the process chamber 300. This results in the load locking chamber 100 having the highest pressure, the transport chamber 200 having a moderate pressure, and the process chamber 300 having the lowest pressure. This pressure gradient setting solves the problem that process by-products or particles generated in the process chamber 300 can easily flow back into the transport chamber 200 and the load locking chamber 100. Since the gas always flows from the high-pressure area to the low-pressure area, the pressure gradient forms an invisible airflow barrier, effectively preventing contaminants in the process chamber 300 from flowing back into the transport chamber 200 and the load locking chamber 100, thereby ensuring the cleanliness of the wafer during transport and reducing the risk of wafer contamination.

[0067] In one embodiment, the control method of the wafer transfer platform further includes: when the target chamber is in an idle state, closing the main backfill gas path 50, opening the extraction gas path corresponding to the target chamber, and controlling the extraction pump 60 to extract gas from the target chamber until the pressure of the target chamber reaches a fourth preset pressure value; closing the extraction gas path corresponding to the target chamber, opening the mass flow controller and the backfill gas path corresponding to the target chamber, and controlling the backfill gas to enter the target chamber at a preset flow rate through the mass flow controller until the pressure of the target chamber reaches a fifth preset pressure value.

[0068] Specifically, when the target chamber is idle, the self-cleaning purging step is executed cyclically. Taking the upper chamber 101 as the target chamber, firstly, the first switch valve ZV1 and the second switch valve ZV2 on the main backfill air circuit 50 are closed, and the angle valves FAV and SAV on the upper exhaust air circuit 10 are opened. The exhaust pump 60 is controlled to evacuate the upper chamber 101 until the pressure reaches the fourth preset pressure value. Then, the upper exhaust air circuit 10 is closed, and the second switch valve ZV2, the mass flow controller MFC, and the diaphragm valves VU1 and VV2 on the upper backfill air circuit 30 are opened. U2, through the mass flow controller (MFC), controls the backfill gas to enter the upper chamber 101 at a preset flow rate until the pressure reaches the fifth preset pressure value. This cycle repeats. This idle purging strategy solves the problem of particulate matter easily accumulating inside the target chamber when it is idle for a long time. Through the cyclic vacuuming and backfilling gas operation, periodic airflow disturbances are formed in the chamber, which lift the particulate matter attached to the chamber wall and discharge it with the airflow. This achieves self-cleaning of the idle chamber, effectively reduces the accumulation of particulate matter in the chamber, and ensures the cleanliness of the chamber when the next wafer is transferred.

[0069] This invention also provides a semiconductor device, which includes a wafer transfer platform configured to execute a control method for the wafer transfer platform. Specifically, the semiconductor device uses a mass flow controller connected in parallel on the main backfill gas path 50 of the wafer transfer platform in conjunction with a first switching valve. During the control process, the main backfill gas path 50 is first closed to remove residual gas and pump out gas. Then, the mass flow controller accurately backfills the wafer, and finally, pressure stabilization detection is performed. Combined with staged pumping, pressure gradient control during wafer transfer, and cyclic self-cleaning purging during idle state, the semiconductor device can achieve both rapid backfilling and precise pressure control during wafer transfer. This effectively avoids pressure fluctuations and overshoot in the load-locked chamber 100 when frequently switching between atmospheric and vacuum conditions, prevents backflow of contaminants in the process chamber 300, and removes particulate matter deposits in the idle chamber. This significantly improves the wafer transfer accuracy and process yield of the semiconductor device and reduces the risk of wafer particulate contamination.

[0070] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A wafer transport platform, characterized in that, include: The load locking chamber includes an upper chamber and a lower chamber. The pressure control assembly includes a vacuum pump, an upper vacuum line, a lower vacuum line, a gas source, an upper backfill line, and a lower backfill line. The vacuum pump is connected to the upper chamber and the lower chamber via the upper and lower vacuum lines, respectively. The gas source is connected to the upper chamber and the lower chamber via the upper and lower backfill lines, respectively. The pressure control component further includes a main backfill gas path, which is connected between the gas source and the upper and lower backfill gas paths. The main backfill gas path is equipped with a mass flow controller and a first switching valve. The mass flow controller and the first switching valve are connected in parallel. The mass flow controller is used to control the backfill gas at a preset flow rate to adjust the pressure of the upper and lower chambers.

2. The wafer transfer platform according to claim 1, characterized in that, The upper backfill gas path includes at least two independent backfill gas paths, and / or the lower backfill gas path includes at least two independent backfill gas paths, with one end of each independent backfill gas path connected to the main backfill gas path and the other end connected to the corresponding upper or lower chamber.

3. The wafer transport platform according to claim 2, characterized in that, Each of the independent backfill gas paths includes a fast backfill branch and a slow backfill branch. The fast backfill branch and the slow backfill branch are arranged in parallel and are both connected between the main backfill gas path and the corresponding upper or lower chamber.

4. The wafer transport platform according to claim 3, characterized in that, A diaphragm valve is provided on the fast backfill branch, and a flow limiting valve and a diaphragm valve are connected in series on the slow backfill branch.

5. The wafer transfer platform according to claim 1, characterized in that, Both the upper and lower air extraction paths include a fast air extraction branch and a slow air extraction branch. The fast and slow air extraction branches are connected in parallel and are both connected between the air pump and the corresponding upper or lower chamber.

6. The wafer transport platform according to claim 5, characterized in that, A fast-speed suction angle valve is provided on the fast-speed suction branch, and a slow-speed suction angle valve is provided on the slow-speed suction branch. The opening degree of the fast-speed suction angle valve is greater than that of the slow-speed suction angle valve.

7. The wafer transfer platform according to claim 1, characterized in that, The main backfill air circuit is also equipped with a second switching valve, which is connected in series with the mass flow controller and in parallel with the first switching valve.

8. The wafer transport platform according to any one of claims 1-7, characterized in that, It also includes a process chamber and a transfer chamber, the process chamber being connected to the transfer chamber, the transfer chamber being connected to one side of the load locking chamber, and the other side of the load locking chamber being connected to the atmosphere.

9. The wafer transfer platform according to any one of claims 1-7, characterized in that, A manual valve, a pressure regulating valve, a pressure detection device, and a filter device are also provided between the gas source and the main backfill gas path. The manual valve, the pressure regulating valve, the pressure detection device, and the filter device are sequentially arranged on the gas path between the gas source and the main backfill gas path along the gas flow direction.

10. A control method for a wafer transfer platform, characterized in that, Applied to the wafer transport platform according to any one of claims 1-9, the method comprises: Close the main backfill air path, open the backfill air path and the extraction air path corresponding to the target chamber, and control the extraction pump to extract air from the target chamber until the pressure in the target chamber reaches the first preset pressure value, wherein the target chamber is the upper chamber or the lower chamber. Close the exhaust gas path corresponding to the target chamber, open the mass flow controller and the backfill gas path corresponding to the target chamber, and use the mass flow controller to control the backfill gas to enter the target chamber through the main backfill gas path and the backfill gas path corresponding to the target chamber at a preset flow rate until the pressure of the target chamber reaches the second preset pressure value. Close the main backfill air path and the backfill air path corresponding to the target chamber, and perform pressure stabilization testing on the target chamber.

11. The method according to claim 10, characterized in that, The backfill gas path corresponding to the target chamber includes a fast backfill branch and a slow backfill branch. The slow backfill branch is equipped with a flow-limiting valve and a diaphragm valve connected in series. Opening the backfill gas path corresponding to the target chamber includes: Only the diaphragm valve of the slow backfill branch corresponding to the target chamber is opened, so that the residual gas in the total backfill gas path and the backfill gas paths corresponding to the target chamber and non-target chambers is drawn out in reverse through the flow limiting valve.

12. The method according to claim 10, characterized in that, The air extraction path corresponding to the target chamber includes a parallel fast air extraction branch and a slow air extraction branch. Controlling the air extraction pump to extract air from the target chamber includes: First, open the slow-speed evacuation branch to evacuate the target chamber until the pressure in the target chamber reaches the third preset pressure value; Then, the rapid air extraction branch is activated to extract air from the target chamber until the pressure in the target chamber reaches the first preset pressure value.

13. The method according to claim 10, characterized in that, The wafer transport platform further includes a transport chamber and a process chamber, and the method further includes: When in wafer transfer mode, the second preset pressure value is controlled to be greater than the pressure of the transfer chamber, and the pressure of the transfer chamber is greater than the pressure of the process chamber.

14. The method according to claim 10, characterized in that, The method further includes: When the target chamber is in an idle state, the main backfill air path is closed, the air extraction air path corresponding to the target chamber is opened, and the air extraction pump is controlled to extract air from the target chamber until the pressure of the target chamber reaches the fourth preset pressure value. Close the exhaust gas path corresponding to the target chamber, open the mass flow controller and the backfill gas path corresponding to the target chamber, and use the mass flow controller to control the backfill gas to enter the target chamber at a preset flow rate until the pressure in the target chamber reaches the fifth preset pressure value.

15. A semiconductor device, characterized in that, Includes a wafer transport platform as described in any one of claims 1-9, the wafer transport platform being configured to perform the method as described in any one of claims 10-14.

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