TOPCon solar cell and photovoltaic module

Abstract

The utility model relates to the field of photovoltaic technology, and especially relates to a TOPCon solar cell and a photovoltaic assembly. The TOPCon solar cell comprises a silicon wafer substrate, an emitter layer, a first tunneling layer and a multi-layer boron-doped crystalline silicon layer, the emitter layer is formed on one side of a light receiving surface of the silicon wafer substrate, and the first tunneling layer and the multi-layer boron-doped crystalline silicon layer are arranged on the emitter layer; and the doping concentrations of the multiple boron-doped crystalline silicon layers are gradually increased in sequence along the direction from the silicon wafer substrate to the boron-doped crystalline silicon layers. By arranging a plurality of boron-doped crystalline silicon layers of which the boron doping concentrations are gradually increased from inside to outside, the boron doping concentration of the boron-doped crystalline silicon layer close to an emitter layer is lower than the boron doping concentration of the boron-doped crystalline silicon layer far away from the emitter layer; therefore, the undesirable phenomenon that the carrier recombination rate is increased due to the fact that the concentration of boron atoms close to the emitter layer is too high can be reduced, the electron and hole recombination phenomenon in the TOPCon solar cell is reduced, and the photoelectric conversion efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaics, in particular to a TOPCon solar cell and a photovoltaic component. Background Art

[0002] With the development of economy and the progress of science and technology, solar cells, as one of the products in the field of photovoltaic technology, are becoming more and more popular. There are many types of solar cells. As one of them, TOPCon solar cells can achieve better surface passivation effect and higher photoelectric conversion efficiency by setting a tunneling oxide layer and a doped polysilicon layer on the silicon wafer substrate.

[0003] In the prior art TOPCon solar cells, the doping concentration of the boron-doped crystalline silicon layer on the front side is single and high, resulting in a large square resistance of the cell, increasing the recombination rate of photogenerated carriers, thereby reducing the photoelectric conversion efficiency of the TOPCon solar cell.

[0004] Therefore, it is urgent to design a TOPCon solar cell and photovoltaic module to solve the above technical problems. Utility Model Content

[0005] The first purpose of the utility model is to provide a TOPCon solar cell to improve the photoelectric conversion efficiency of the TOPCon solar cell.

[0006] To achieve this purpose, the utility model adopts the following technical solutions:

[0007] The utility model provides a TOPCon solar cell, comprising a silicon wafer substrate, an emitter layer, a first tunneling layer and a plurality of boron-doped crystalline silicon layers, wherein the emitter layer is formed on one side of a light-receiving surface of the silicon wafer substrate, and the first tunneling layer and the plurality of boron-doped crystalline silicon layers are arranged on the emitter layer; along the direction from the silicon wafer substrate to the boron-doped crystalline silicon layer, the doping concentrations of the plurality of boron-doped crystalline silicon layers are increased in sequence.

[0008] As an optional technical solution of a TOPCon solar cell, the TOPCon solar cell further includes a front passivation layer, and the front passivation layer is deposited on the boron-doped crystalline silicon layer.

[0009] As an optional technical solution of a TOPCon solar cell, the TOPCon solar cell further includes an anti-reflection layer, and the anti-reflection layer is deposited on the front passivation layer.

[0010] As an optional technical solution for a TOPCon solar cell, the TOPCon solar cell also includes a front electrode, which is printed on the anti-reflection layer. The front electrode can penetrate the anti-reflection layer and the front passivation layer and make ohmic contact with the boron-doped crystalline silicon layer.

[0011] As an optional technical solution of a TOPCon solar cell, the TOPCon solar cell further includes a boron-doped amorphous silicon layer, and the boron-doped amorphous silicon layer is arranged between the first tunneling layer and the innermost boron-doped crystalline silicon layer.

[0012] As an optional technical solution of a TOPCon solar cell, the TOPCon solar cell further includes an intrinsic polysilicon layer, and the intrinsic polysilicon layer is arranged between the first tunneling layer and the innermost boron-doped crystalline silicon layer.

[0013] As an optional technical solution of a TOPCon solar cell, the TOPCon solar cell further includes a second tunneling layer and a phosphorus-doped polysilicon layer, and the second tunneling layer and the phosphorus-doped polysilicon layer are arranged on the backlight side of the silicon wafer substrate.

[0014] As an optional technical solution of a TOPCon solar cell, the TOPCon solar cell further includes a back passivation layer and a back electrode, and the back passivation layer is deposited on the phosphorus-doped polysilicon layer;

[0015] The back electrode is printed on the back passivation layer, and the back electrode can penetrate the back passivation layer and make ohmic contact with the phosphorus-doped polysilicon layer.

[0016] As an optional technical solution for a TOPCon solar cell, the boron-doped crystalline silicon layer is a boron-doped polycrystalline silicon layer or a boron-doped microcrystalline silicon layer.

[0017] The second purpose of the utility model is to provide a photovoltaic module, which can improve the photoelectric conversion efficiency of the TOPCon solar cell and save costs.

[0018] To achieve this purpose, the utility model adopts the following technical solutions:

[0019] The utility model provides a photovoltaic module, which comprises a front plate, a front adhesive film, a back adhesive film, a back plate and the above-mentioned TOPCon solar cell, wherein the back plate, the back adhesive film, the TOPCon solar cell, the front adhesive film and the front plate are stacked in sequence.

[0020] The beneficial effects of the utility model include at least:

[0021] The utility model provides a TOPCon solar cell, which includes a silicon wafer substrate, an emitter layer, a first tunnel layer and a multi-layer boron-doped crystalline silicon layer, wherein the emitter layer is formed on a light-receiving side of the silicon wafer substrate, and the first tunnel layer and the multi-layer boron-doped crystalline silicon layer are arranged on the emitter layer; along the direction from the silicon wafer substrate to the boron-doped crystalline silicon layer, the doping concentration of the multi-layer boron-doped crystalline silicon layer increases in sequence. The utility model arranges a multi-layer boron-doped crystalline silicon layer whose boron doping concentration increases in sequence from the inside to the outside, so that the boron doping concentration of the boron-doped crystalline silicon layer close to the emitter layer is lower than the boron doping concentration of the boron-doped crystalline silicon layer far from the emitter layer, thereby reducing the undesirable phenomenon of aggravating the carrier recombination rate due to the excessively high boron atom concentration close to the emitter layer, that is, through the above design, the boron atom concentration close to the emitter layer can be reduced, thereby reducing the free carrier (hole) concentration in the p-type region, reducing the rate of recombination with electrons in the n-type region, reducing the electron-hole recombination phenomenon in the TOPCon solar cell, and thus improving the photoelectric conversion efficiency.

[0022] At the same time, the utility model can also reduce the phenomenon of boron silicon precipitation in the boron-doped crystalline silicon layer by designing a boron doping concentration that increases gradually from the inside to the outside, thereby slowing down the recombination rate of carriers, thereby improving the carrier collection efficiency and improving the photoelectric conversion efficiency of the TOPCon solar cell.

[0023] The utility model also provides a photovoltaic module. Since the TOPCon solar cell in the photovoltaic module has multiple boron-doped crystalline silicon layers with increasing boron doping concentrations from the inside to the outside, the photoelectric conversion efficiency of the TOPCon solar cell can be improved, saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0025] Figure 1 Schematic diagram of the structure of the TOPCon solar cell provided in the embodiment of the utility model Figure 1 ;

[0026] Figure 2 Schematic diagram of the structure of the TOPCon solar cell provided in the embodiment of the utility model Figure 2 ;

[0027] Figure 3Schematic diagram of the structure of the TOPCon solar cell provided in the embodiment of the utility model Figure 3 .

[0028] Reference numerals

[0029] 1. Silicon wafer substrate; 2. Emitter layer; 3. First tunneling layer; 4. Boron-doped crystalline silicon layer; 5. Front passivation layer; 6. Anti-reflection layer; 7. Front electrode; 8. Second tunneling layer; 9. Phosphorus-doped polysilicon layer; 10. Back passivation layer; 11. Back electrode; 12. Boron-doped amorphous silicon layer; 13. Intrinsic polysilicon layer. DETAILED DESCRIPTION

[0030] In order to make the technical problems solved by the present invention, the technical solutions adopted and the technical effects achieved more clearly, the technical solutions of the present invention are further explained below with reference to the accompanying drawings and through specific implementation methods.

[0031] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0033] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplified operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation of the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0034] In the description of this embodiment, unless otherwise specified, the term "plurality" refers to a quantity of two or more than two.

[0035] This embodiment provides a TOPCon solar cell, which can improve the photoelectric conversion efficiency of the TOPCon solar cell.

[0036] like Figure 1 As shown, the TOPCon solar cell mainly includes a silicon wafer substrate 1, an emitter layer 2, a first tunneling layer 3 and a multi-layer boron-doped crystalline silicon layer 4. The emitter layer 2 is formed on the light-receiving side of the silicon wafer substrate 1, and the first tunneling layer 3 and the multi-layer boron-doped crystalline silicon layer 4 are arranged on the emitter layer 2; along the direction of the silicon wafer substrate 1 pointing to the boron-doped crystalline silicon layer 4, the doping concentration of the multi-layer boron-doped crystalline silicon layer 4 increases successively.

[0037] Based on the above design, in this embodiment, the boron-doped crystalline silicon layer 4 has the following functions:

[0038] First, it enhances the p-type region of TOPCon solar cells. Boron is a p-type impurity that can increase the doping concentration in polysilicon to 10^ 18 / cm^ 3 As described above, the boron atoms in the boron-doped crystalline silicon layer 4 replace a portion of the silicon atoms, making the polycrystalline silicon a p-type semiconductor, that is, a p-type region is formed on the silicon wafer substrate 1, and a pn junction can be formed between the p-type region and the n-type region. An energy band difference is formed between the p-type region and the n-type region, thereby forming an electric field to achieve separation and collection of photogenerated charges.

[0039] Second, improve photovoltaic efficiency. The boron-doped crystalline silicon layer 4 can increase the conductivity of the TOPCon solar cell, increase the charge transfer rate, and thus improve the photoelectric conversion efficiency.

[0040] Third, improve the light absorption capacity. The boron-doped crystalline silicon layer 4 has a strong absorption capacity for sunlight, which can increase the absorption capacity of TOPCon solar cells for sunlight and improve the light energy conversion efficiency.

[0041] Fourth, inhibiting electron recombination. The boron-doped crystalline silicon layer 4 can inhibit the recombination of electrons and holes by adjusting the energy band structure of the silicon wafer substrate 1, thereby reducing the energy loss of the TOPCon solar cell and improving the photoelectric conversion efficiency.

[0042] The TOPCon solar cell in this embodiment can be provided with two, three, four, five or other number of boron-doped crystalline silicon layers 4, and the boron doping concentration of the multiple boron-doped crystalline silicon layers 4 increases successively from the inside to the outside, so that the boron doping concentration of the boron-doped crystalline silicon layer 4 close to the emitter layer 2 is lower than the boron doping concentration of the boron-doped crystalline silicon layer 4 far from the emitter layer 2, thereby being able to reduce the undesirable phenomenon of aggravated carrier recombination rate due to excessively high boron atom concentration close to the emitter layer 2 under the condition of ensuring that the boron-doped polycrystalline silicon achieves the above-mentioned effect, that is, through the above-mentioned design, the boron atom concentration close to the emitter layer 2 can be reduced, thereby reducing the free carrier (hole) concentration in the p-type region, reducing the rate of recombination with electrons in the n-type region, reducing the electron-hole recombination phenomenon in the TOPCon solar cell, and thereby improving the photoelectric conversion efficiency.

[0043] At the same time, in this embodiment, by designing the boron-doped crystalline silicon layer 4 with a boron doping concentration that increases gradually from the inside to the outside, the phenomenon of boron silicon precipitation in the boron-doped crystalline silicon layer 4 can be reduced, thereby slowing down the recombination rate of carriers, thereby improving the carrier collection efficiency and improving the photoelectric conversion efficiency of the TOPCon solar cell.

[0044] Optionally, the boron-doped crystalline silicon layer 4 in this embodiment is configured as three layers, and the boron doping concentration of the innermost boron-doped crystalline silicon layer 4 is 10^ 15 / cm^ 3 The boron doping concentration of the middle boron-doped crystalline silicon layer 4 is 10^ 16 / cm^ 3 The boron doping concentration of the outermost boron-doped crystalline silicon layer 4 is 10^ 17 / cm^ 3 Of course, the operator can also set other boron-doped crystalline silicon layers 4 with different numbers of layers and different boron doping concentrations according to actual needs, which will not be described in detail here. The thickness of the multiple boron-doped crystalline silicon layers 4 can be set to the same thickness, for example, the thickness of each boron-doped crystalline silicon layer 4 is set to between 20nm and 100nm, or it can be set to different thicknesses, which will not be described in detail in this embodiment.

[0045] Optionally, the boron-doped crystalline silicon layer 4 in this embodiment may be configured as a boron-doped polycrystalline silicon layer or a boron-doped microcrystalline silicon layer.

[0046] Optionally, the first tunneling layer 3 in this embodiment can be set to silicon dioxide or silicon oxide, and the first tunneling layer 3 can help electrons and holes to combine faster in the TOPCon solar cell and generate current, thereby improving the efficiency of photoelectric conversion. In addition, the first tunneling layer 3 can also reduce the series resistance of the TOPCon solar cell and improve the output power of the TOPCon solar cell.

[0047] like Figure 1 As shown, in this embodiment, the TOPCon solar cell further includes a front passivation layer 5, an anti-reflection layer 6 and a front electrode 7, wherein the front passivation layer 5 is deposited on the boron-doped crystalline silicon layer 4, the anti-reflection layer 6 is deposited on the front passivation layer 5, and the front electrode 7 is printed on the anti-reflection layer 6. The front electrode 7 can penetrate the anti-reflection layer 6 and the front passivation layer 5 under the sintering process and make ohmic contact with the boron-doped crystalline silicon layer 4, so that the current generated in the silicon wafer substrate 1 can be conducted out by the front electrode 7 after passing through the emitter layer 2. In addition, by designing the boron-doped crystalline silicon layer 4 with a boron doping concentration increasing from the inside to the outside, the contact resistance between the front electrode 7 and the boron-doped crystalline silicon layer 4 can be reduced, so that the photoelectric conversion efficiency of the TOPCon solar cell can be further improved.

[0048] Optionally, the front passivation layer 5 in this embodiment can be made of silicon oxide, which can provide the necessary energy gap to promote the conduction of electrons and hinder the recombination of electrons and holes. The provision of the front passivation layer 5 can reduce the phenomenon of surface electron recombination and charge recombination, thereby improving the efficiency of photoelectric conversion.

[0049] Optionally, the anti-reflection layer 6 in this embodiment can be set as a multilayer, and the anti-reflection layer 6 is silicon nitride or silicon nitride oxide. The setting of the anti-reflection layer 6 can improve the absorption of light, so that more light can enter the TOPCon solar cell, thereby improving the photoelectric conversion efficiency.

[0050] Optionally, the front electrode 7 in this embodiment is printed with silver paste or silver aluminum paste by screen printing process to enhance conductivity.

[0051] like Figure 2 As shown, in this embodiment, the TOPCon solar cell further includes a boron-doped amorphous silicon layer 12, and the boron-doped amorphous silicon layer 12 is disposed between the first tunneling layer 3 and the innermost boron-doped crystalline silicon layer 4. Since the passivation performance of the boron-doped amorphous silicon layer 12 is better than that of the boron-doped crystalline silicon layer 4, after adding the boron-doped amorphous silicon layer 12, the passivation performance of the boron-doped crystalline silicon layer 4 (i.e., the innermost boron-doped crystalline silicon layer 4) close to the first tunneling layer 3 can be increased, and the carrier recombination phenomenon on the surface can be reduced, thereby improving the efficiency of photoelectric conversion.

[0052] like Figure 3As shown, in some optional embodiments, the TOPCon solar cell further includes an intrinsic polysilicon layer 13, and the intrinsic polysilicon layer 13 is disposed between the first tunneling layer 3 and the innermost boron-doped crystalline silicon layer 4. That is, the boron-doped amorphous silicon layer 12 can be replaced by the intrinsic polysilicon layer 13, and since the passivation performance of the intrinsic polysilicon layer 13 is better than that of the boron-doped crystalline silicon layer 4, the passivation effect can also be enhanced by adding the intrinsic polysilicon layer 13.

[0053] Optionally, the operator may flexibly set the number of layers of the boron-doped amorphous silicon layer 12 and the number of layers of the intrinsic polysilicon layer 13 according to actual needs, which will not be described in detail here.

[0054] like Figure 1 As shown, in this embodiment, the TOPCon solar cell also includes a second tunneling layer 8, a phosphorus-doped polysilicon layer 9 and a back passivation layer 10. The second tunneling layer 8 and the phosphorus-doped polysilicon layer 9 are arranged on the backlight side of the silicon wafer substrate 1, and the back passivation layer 10 is deposited on the phosphorus-doped polysilicon layer 9.

[0055] Optionally, the second tunneling layer 8 in this embodiment can be set to silicon dioxide or silicon oxide. The main function of the second tunneling layer 8 is to reduce the energy barrier of electrons between the pn junction, thereby increasing the transmission speed of electrons, and at the same time reduce the recombination loss of electrons, thereby improving the conversion efficiency of the TOPCon solar cell.

[0056] In this embodiment, by providing the phosphorus-doped polysilicon layer 9, an N-type semiconductor can be formed, that is, an N-type region is formed on the silicon wafer substrate 1. The N-type semiconductor has a high electron concentration, which helps to improve the charge transfer efficiency of the TOPCon solar cell. In addition, the phosphorus-doped polysilicon layer 9 also helps to improve the generation of photocurrent, increase the generation and transmission of photogenerated carriers, and improve the photoelectric conversion efficiency of the TOPCon solar cell.

[0057] Optionally, the back passivation layer 10 in this embodiment can be set as a multilayer, and a thin film of aluminum oxide, silicon nitride, etc. can be deposited by methods including but not limited to chemical vapor deposition (CVD), physical vapor deposition (PECVD), etc. to form the back passivation layer 10. The back passivation layer 10 can reduce the recombination of electrons and holes on the back of the battery and prevent the loss of charge. In other words, the back passivation layer 10 can provide a protective layer for the silicon wafer substrate 1, reduce the possibility of recombination of electrons and holes, and help improve the photoelectric conversion efficiency of the TOPCon solar cell.

[0058] like Figure 1As shown, in this embodiment, the TOPCon solar cell also includes a back electrode 11, which is printed on the back passivation layer 10. The back electrode 11 can penetrate the back passivation layer 10 in sequence under the sintering process and make ohmic contact with the phosphorus-doped polysilicon layer 9, thereby facilitating the outflow of current. The front electrode 7 and the back electrode 11 are externally connected to a load, thereby forming a closed loop.

[0059] Optionally, the back electrode 11 in this embodiment is printed from aluminum paste by a screen printing process to enhance conductivity.

[0060] This embodiment also provides a photovoltaic module, which includes a front panel, a front adhesive film, a back adhesive film, a back panel and the above-mentioned TOPCon solar cell, the back panel, the back adhesive film, the TOPCon solar cell, the front adhesive film and the front panel are stacked in sequence, the back panel, the back adhesive film, the TOPCon solar cell, the front adhesive film and the front panel are laminated by a laminator, and the bus bar is led out to facilitate the installation of the junction box, thereby completing the assembly of the photovoltaic module. Since the TOPCon solar cell in the photovoltaic module has multiple layers of boron-doped crystalline silicon layers 4 with increasing boron doping concentrations from the inside to the outside, the photoelectric conversion efficiency of the TOPCon solar cell can be improved, saving costs.

[0061] Obviously, the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention is described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

[0062] Note that in the description of this specification, the reference terms "some embodiments", "other embodiments", etc., mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

Claims

1. TOPCon solar cell, characterized in that: The invention comprises a silicon wafer substrate (1), an emitter layer (2), a first tunneling layer (3) and a plurality of boron-doped crystalline silicon layers (4), wherein the emitter layer (2) is formed on the light-receiving side of the silicon wafer substrate (1), and the first tunneling layer (3) and the plurality of boron-doped crystalline silicon layers (4) are arranged on the emitter layer (2); and along the direction from the silicon wafer substrate (1) to the boron-doped crystalline silicon layer (4), the doping concentration of the plurality of boron-doped crystalline silicon layers (4) increases in sequence.

2. The TOPCon solar cell according to claim 1, characterized in that: The TOPCon solar cell further comprises a front passivation layer (5), wherein the front passivation layer (5) is deposited on the boron-doped crystalline silicon layer (4).

3. The TOPCon solar cell according to claim 2, characterized in that: The TOPCon solar cell further comprises an anti-reflection layer (6), wherein the anti-reflection layer (6) is deposited on the front passivation layer (5).

4. The TOPCon solar cell according to claim 3, characterized in that: The TOPCon solar cell further comprises a front electrode (7), wherein the front electrode (7) is printed on the anti-reflection layer (6), and the front electrode (7) can penetrate the anti-reflection layer (6), the front passivation layer (5), and form ohmic contact with the boron-doped crystalline silicon layer (4).

5. The TOPCon solar cell according to claim 1, characterized in that: The TOPCon solar cell further comprises a boron-doped amorphous silicon layer (12), wherein the boron-doped amorphous silicon layer (12) is arranged between the first tunneling layer (3) and the innermost boron-doped crystalline silicon layer (4).

6. The TOPCon solar cell according to claim 1, characterized in that: The TOPCon solar cell further comprises an intrinsic polycrystalline silicon layer (13), wherein the intrinsic polycrystalline silicon layer (13) is arranged between the first tunneling layer (3) and the innermost boron-doped crystalline silicon layer (4).

7. The TOPCon solar cell according to claim 1, characterized in that: The TOPCon solar cell further comprises a second tunneling layer (8) and a phosphorus-doped polysilicon layer (9), wherein the second tunneling layer (8) and the phosphorus-doped polysilicon layer (9) are arranged on the backlight side of the silicon wafer substrate (1).

8. The TOPCon solar cell according to claim 7, characterized in that: The TOPCon solar cell further comprises a back passivation layer (10) and a back electrode (11), wherein the back passivation layer (10) is deposited on the phosphorus-doped polysilicon layer (9); The back electrode (11) is printed on the back passivation layer (10), and the back electrode (11) can penetrate the back passivation layer (10) and make ohmic contact with the phosphorus-doped polysilicon layer (9).

9. The TOPCon solar cell according to claim 1, characterized in that: The boron-doped crystalline silicon layer (4) is a boron-doped polycrystalline silicon layer or a boron-doped microcrystalline silicon layer.

10. A photovoltaic module, characterized in that The photovoltaic module comprises a front panel, a front adhesive film, a back adhesive film, a back panel and a TOPCon solar cell according to any one of claims 1 to 9, wherein the back panel, the back adhesive film, the TOPCon solar cell, the front adhesive film and the front panel are stacked in sequence.

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