Vapor deposition device for silicon wafer

Abstract

The utility model discloses a vapor deposition device for a silicon wafer, and relates to the technical field of photovoltaic cells. The vapor deposition device of the silicon wafer comprises a deposition cavity, a film coating support plate and a conductive piece. A positive electrode plate is arranged on the top wall of the deposition cavity, a negative electrode plate is arranged on the bottom wall of the deposition cavity, and the positive electrode plate and the negative electrode plate are oppositely arranged; the coating carrier plate is located on one side, facing the positive electrode plate, of the negative electrode plate, the coating carrier plate is provided with an accommodating area and a coating carrier plate frame, and the accommodating area is provided with at least one accommodating groove for accommodating a silicon wafer; the conductive part is located between the film-coated carrier plate and the negative electrode plate, and the film-coated carrier plate and the negative electrode plate are electrically connected through the conductive part. According to the vapor deposition device provided by the embodiment of the invention, the spark discharge phenomenon can be effectively reduced, and the quality and uniformity of a coating layer are ensured.

Description

Technical Field

[0001] The utility model belongs to the technical field of photovoltaic cells, and in particular relates to a vapor deposition device for silicon slices. Background Art

[0002] The continuous innovation of heterojunction solar cell technology has changed from amorphous layer doping to microcrystalline layer doping. Due to the improvement of technology, VHF (Very High Frequency) power supply is required for doping N / P layer. As the power frequency and power increase, spark discharge is prone to occur at the edge of the chamber and carrier due to the edge effect and skin effect of the electric field during the process. This spark discharge will not only cause fluctuations in the power of the chamber power supply, but may also cause gas breakdown, resulting in uneven coating. Utility Model Content

[0003] The utility model aims to solve one of the technical problems in the related art at least to a certain extent. To this end, the utility model proposes a vapor deposition device for silicon wafers, which can avoid spark discharge phenomenon and ensure the quality and uniformity of the film layer.

[0004] The utility model proposes a vapor deposition device for silicon wafers, which includes a deposition chamber, a film-coating carrier plate, and a conductive member. A positive electrode plate is provided at the top wall of the deposition chamber, a negative electrode plate is provided at the bottom wall of the deposition chamber, and the positive electrode plate and the negative electrode plate are arranged opposite to each other; the film-coating carrier plate is located on the side of the negative electrode plate facing the positive electrode plate, the film-coating carrier plate has a containing area and a film-coating carrier plate frame, and the containing area has at least one containing groove for containing silicon wafers; the conductive member is located between the film-coating carrier plate and the negative electrode plate, and the film-coating carrier plate and the negative electrode plate are electrically connected through the conductive member.

[0005] According to the vapor deposition device of the embodiment of the present application, by providing a conductive member, the charges on the deposition chamber and the coating carrier can be conducted to the negative electrode plate, thereby correspondingly reducing the occurrence of spark discharge in the deposition chamber when the silicon wafer is coated, thereby improving the stability of the vapor deposition process, and also helping to improve the quality and uniformity of the silicon wafer coating.

[0006] According to the vapor deposition device of some embodiments of the utility model, the conductive part includes a first conductive part, an extension part and a second conductive part connected in sequence, the first conductive part is electrically connected to the accommodating area, and the second conductive part is electrically connected to the negative electrode plate.

[0007] In some embodiments, the first conductive portion is detachably connected to a side of the coating carrier away from the negative electrode plate; and / or, the second conductive portion is detachably connected to a side of the coating carrier close to the negative electrode plate, and the second conductive portion is in contact with the negative electrode plate.

[0008] According to the vapor deposition device of some embodiments of the present invention, the conductive member includes a plurality of sub-conductive members, and each of the plurality of sub-conductive members is independently electrically connected to the coating carrier plate and the negative electrode plate.

[0009] In some embodiments, the width of the sub-conductive member is a, and the width of the gap between adjacent sub-conductive members is b, satisfying a:b=1:5; and / or, the distance from the sub-conductive member located on the long side and at the end of the coated carrier to the edge of the coated carrier is c, satisfying a:c=1:1; and / or, the length of the sub-conductive member is e, and the distance from the sub-conductive member located on the short side and at the end of the coated carrier to the edge of the coated carrier is d, satisfying e:d=2:1.

[0010] In some embodiments, a vertical distance between the first conductive portion and the receiving groove at the edge of the coating carrier is 0 cm-2 cm.

[0011] According to the vapor deposition apparatus of some embodiments of the present invention, the top wall of the deposition chamber has a process gas inlet, and the bottom wall of the deposition chamber has a gas outlet.

[0012] In some embodiments, the vapor deposition apparatus further includes: a vacuum pump, wherein the vacuum pump and the gas outlet are connected via a pipeline.

[0013] According to some embodiments of the utility model, the vapor deposition device further includes: an air distribution plate, which is located on the side of the electrode plate close to the coating carrier; and / or, a telescopic part, which is located between the negative electrode plate and the bottom wall of the deposition chamber; and / or, a first valve is provided on the first side wall of the deposition chamber, and a second valve is provided on the second side wall relative to the first side wall, and the coating carrier enters and exits the deposition chamber through the first valve and the second valve.

[0014] According to the vapor deposition device of some embodiments of the present invention, the conductive member is one of an aluminum alloy sheet, a copper alloy sheet, a gold sheet or a silver sheet.

[0015] In the second aspect of the present invention, the present invention provides a coating device, wherein the coating device comprises the aforementioned coating carrier plate. Therefore, the coating device has all the advantages of the aforementioned coating carrier plate, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0017] Figure 1 is a schematic structural diagram of a vapor deposition device according to some embodiments of the present application;

[0018] Figure 2 is a schematic diagram of the arrangement of sub-conductive elements according to some embodiments of the present application;

[0019] Figure 3 It is a schematic diagram of the structure of a conductive member according to some embodiments of the present application.

[0020] Reference numerals:

[0021] Vapor deposition device 100,

[0022] Deposition chamber 10, positive electrode plate 11, negative electrode plate 12, coating carrier 20, containing area 25, containing tank 251, coating carrier frame 26,

[0023] Conductive member 30, sub-conductive member 301,

[0024] The first conductive portion 31 , the extending portion 32 , and the second conductive portion 33 . DETAILED DESCRIPTION

[0025] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0026] In the description of the present utility model, it should be understood that the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features.

[0027] In the present invention, unless otherwise clearly defined and limited, the terms such as "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium. It can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0028] Heterojunction solar cells are usually made using the following steps: texturing-CVD-PVD-screen printing-testing. Among them, the CVD deposition step is responsible for forming a thin and disordered structure on the amorphous silicon film layer. This step requires not only a good passivation effect, but also sufficient effective doping to form an effective PN junction.

[0029] In order to improve the light transmittance of heterojunction solar cells and thus increase the current output, the method of plating microcrystalline doped films is adopted. However, this microcrystalline process requires higher requirements for the power supply, requiring the use of a higher frequency VHF power supply, and the power is also significantly increased from the original 5KW to 20KW, and even up to 30KW.

[0030] However, when using a higher power VHF power supply, spark discharge is very likely to occur in the chamber due to the edge effect and skin effect of the electric field. This spark discharge not only causes fluctuations in the atmosphere in the chamber, but also has a negative impact on the quality and uniformity of the film layer, causing the film layer quality to decline and the uniformity to deteriorate.

[0031] In order to solve the above problems, refer to Figure 1-Figure 3 A vapor deposition apparatus 100 for a silicon wafer according to an embodiment of the present application is described.

[0032] like Figure 1 As shown, a vapor deposition device 100 according to an embodiment of the present application comprises: a deposition chamber 10 , a coating carrier 20 and a conductive member 30 .

[0033] The deposition chamber 10 serves as the main working area for vapor deposition, ensuring the sealing of the space during the deposition process.

[0034] A positive electrode plate 11 is provided at the top wall of the deposition chamber 10, and a negative electrode plate 12 is provided at the bottom wall. The two electrode plates are arranged opposite to each other to form an electric field infrastructure. The electric field can effectively guide and control the movement of the reaction gas during the vapor deposition process, thereby ensuring that the silicon wafer surface can be effectively coated.

[0035] The coating carrier 20 is disposed on the side of the negative electrode plate 12 facing the positive electrode plate 11 , and serves as a support and fixing platform for the silicon wafer.

[0036] The coating carrier 20 has a receiving area 25 and a coating carrier frame 26. The receiving area 25 is provided with at least one receiving groove 251 for receiving the silicon wafer. The size and shape of the receiving groove 251 are designed according to the size and shape of the silicon wafer, so that the receiving groove 251 can fit the silicon wafer tightly to prevent it from shaking or shifting during the deposition process.

[0037] The conductive member 30 is located between the film-coated carrier 20 and the negative electrode plate 12, and plays an electrical connection role. First, by adding the conductive member 30 that is connected up and down at the edge of the film-coated carrier 20, the excellent conductive performance of the conductive member 30 is utilized to effectively guide the charges that may be accumulated on the film-coated carrier 20. In turn, the accumulation of charges on the film-coated carrier 20 is reduced, thereby reducing the risk of spark discharge caused by charge accumulation.

[0038] Secondly, due to the accumulation of charges on the positive electrode plate 11, the charges on the film-coated carrier plate 20 are led out by the conductive member 30, and a certain potential difference is formed between the positive electrode plate 11 and the negative electrode plate 12. This potential difference generates a weak electric field, which guides the charges accumulated on the positive electrode plate 11 to move toward the film-coated carrier plate 20 and finally be led out by the conductive member 30.

[0039] Therefore, providing the conductive member 30 can further reduce the accumulation of charges on the positive electrode plate 11, and also help maintain the uniformity of the electric field distribution, thereby ensuring the stable progress of the vapor deposition process.

[0040] According to the vapor deposition device 100 of the embodiment of the present application, the charge accumulation on the deposition chamber 10 and the coating carrier 20 is effectively reduced, thereby reducing the occurrence of spark discharge, which can improve the stability of the vapor deposition process and help improve the quality and uniformity of silicon wafer coating.

[0041] According to some embodiments of the present application, the vapor deposition device 100 is as follows: Figure 2 As shown, the conductive member 30 includes a first conductive portion 31 , an extension portion 32 and a second conductive portion 33 connected in sequence. The first conductive portion 31 is electrically connected to the accommodating area 25 , and the second conductive portion 33 is electrically connected to the negative electrode plate 12 .

[0042] The first conductive portion 31 , the extending portion 32 and the second conductive portion 33 are connected in sequence to form a complete conductive path.

[0043] First, the first conductive portion 31 extends into the containing area 25 of the coating carrier 20 and is electrically connected to the containing area 25. This allows the first conductive portion 31 to directly contact the silicon wafer and the charges that may be accumulated in the containing area 25. Therefore, the first conductive portion 31 can effectively lead out more charges in the containing area 25, reduce the accumulation of charges in the silicon wafer and its surrounding areas, and thus reduce the risk of spark discharge.

[0044] Secondly, the second conductive part 33 is electrically connected to the negative electrode plate 12 of the deposition chamber 10. The second conductive part 33 can further transfer the charge derived from the first conductive part 31 to the negative electrode plate 12, thereby forming a complete path. Thus, the conductive member 30 achieves the effect of deriving the charge in the receiving area 25.

[0045] Finally, the extension portion 32 serves as a bridge connecting the first conductive portion 31 and the second conductive portion 33, and plays a role in forming a stable and continuous path between the first conductive portion 31 and the second conductive portion 33. The existence of the extension portion 32 makes the entire conductive member 30 structure more stable and reliable, and is not easily disturbed by external factors.

[0046] In some embodiments, the first conductive portion 31 can be detachably connected to a side of the coating carrier 20 away from the negative electrode plate 12; and / or, the second conductive portion 33 can be detachably connected to a side of the coating carrier 20 close to the negative electrode plate 12, and the second conductive portion 33 is in contact with the negative electrode plate 12.

[0047] It is worth noting that during use, the conductive member 30 may rub against the coating carrier 20 or the negative electrode plate 12 , thereby causing wear and affecting the conductive effect of the conductive member 30 .

[0048] When only the detachable first conductive part 31 is provided, the first conductive part 31 can be easily replaced or repaired without disassembling the entire coating carrier 20. This is suitable for scenarios where the wear of the first conductive part 31 is the main concern, while the second conductive part 33 is relatively stable.

[0049] On the contrary, when a detachable second conductive part 33 is provided, the entire conductive member 30 structure can be easily replaced, including the part in direct contact with the negative electrode plate 12. This is suitable for those scenarios where the conductive member 30 needs to be replaced frequently or the wear between the conductive member 30 and the negative electrode plate 12 is high.

[0050] When the detachable first conductive part 31 and the second conductive part 33 are provided at the same time, maximum flexibility can be obtained. This arrangement allows the user to choose to replace a specific part or the entire structure according to the wear of the conductive member 30, thereby achieving the best cost-effectiveness and use effect.

[0051] According to some embodiments of the present application, the vapor deposition device 100 is as follows: Figure 3 As shown, the conductive member 30 includes a plurality of sub-conductive members 301 , and each of the plurality of sub-conductive members 301 is independently electrically connected to the coating carrier 20 and the negative electrode plate 12 .

[0052] By means of independent connection, each sub-conductive component 301 can work independently without interfering with each other. When a sub-conductive component 301 is worn, it can be replaced or repaired independently without affecting the whole device.

[0053] During the operation of the vapor deposition device 100, the coating carrier 20 needs to be driven, so the coating carrier frame 26 needs to have a certain friction force. The friction between the conductive member 30 and the silicon wafer is not enough to provide sufficient traction force, which may cause transmission slippage and affect the normal operation of the device and the coating effect.

[0054] By providing multiple sub-conductive members 301, the originally large friction area is dispersed into multiple smaller areas, thereby reducing the friction area between each sub-conductive member 301 and the silicon wafer, thereby ensuring the conductive performance and reducing the transmission slip problem caused by the large friction area.

[0055] In addition, by providing a plurality of sub-conductive members 301 , the cost of the vapor deposition apparatus 100 can be reduced.

[0056] According to the vapor deposition apparatus 100 of some embodiments, in some embodiments, the width of the sub-conductive member is a, and the width of the gap between adjacent sub-conductive members is b, satisfying a:b = 1:5. This arrangement helps to optimize the electric field distribution, so that during the vapor deposition process, the electric field can be more evenly distributed on the coating carrier, thereby improving the uniformity and efficiency of vapor deposition.

[0057] And / or, the distance between the sub-conductive member located at the long side and the end of the coating carrier and the edge of the coating carrier is c, satisfying a:c=1:1. And / or, the length of the sub-conductive member is e, and the distance between the sub-conductive member located at the short side and the end of the coating carrier and the edge of the coating carrier is d, satisfying e:d=2:1. This arrangement helps to reduce the edge effect and ensure that a uniform vapor deposition effect can be obtained over the entire length of the coating carrier.

[0058] In some embodiments, the vertical distance between the first conductive portion 31 and the receiving groove 251 at the edge of the coating carrier 20 is 0 cm-2 cm.

[0059] This distance range can ensure stable contact between the first conductive portion 31 and the coating carrier 20, and avoid poor conductivity due to excessive vertical distance, thereby ensuring the production quality of silicon wafers.

[0060] For example, the vertical distance between the first conductive portion 31 and the receiving groove 251 at the edge of the coating carrier 20 can be 0, 0.5 cm, 1 cm, 1.5 cm, 1.8 cm, 2 cm, etc.

[0061] According to the vapor deposition apparatus 100 of some embodiments, the top wall of the deposition chamber 10 has a process gas inlet, and the bottom wall of the deposition chamber 10 has a gas outlet.

[0062] The process gas inlet is arranged at the top wall so that the process gas can enter the deposition chamber 10 uniformly and effectively. When the process gas enters the chamber through the inlet, it can diffuse rapidly and contact the surface of the silicon wafer, thereby ensuring the uniformity and efficiency of the coating process.

[0063] At the same time, the gas outlet located at the bottom wall helps to timely discharge the waste gas and other unnecessary gases generated during the deposition process. The gas discharge mechanism can prevent the accumulation of waste gas in the chamber, thereby maintaining the gas environment in the chamber, which helps to improve the coating quality and production efficiency.

[0064] In some embodiments, the vapor deposition apparatus 100 further includes a vacuum pump, and the vacuum pump and the gas outlet are connected via a pipeline.

[0065] The function of the vacuum pump is to extract the gas in the deposition chamber 10 so that the inside of the deposition chamber 10 reaches a certain vacuum degree. The use of a high vacuum environment helps to reduce the collision and interference between gas molecules, thereby improving the quality and uniformity of the coating. Through the operation of the vacuum pump, the gas pressure in the deposition chamber 10 can be quickly reduced, creating a stable and reaction-friendly environment for the coating process.

[0066] At the same time, the pipe connection between the gas outlet and the vacuum pump ensures that the waste gas can be discharged smoothly. During the coating process, the waste gas and other unnecessary gases generated enter the pipe through the gas outlet and are then pumped out by the vacuum pump. This can prevent the accumulation of waste gas in the chamber and ensure the continuity and stability of the coating process.

[0067] In addition, the connection between the vacuum pump and the gas outlet also facilitates cleaning and maintenance of the entire vapor deposition device 100. After the device has been used for a period of time, the residual gas and impurities in the cavity can be extracted by the vacuum pump, thereby keeping the device clean, which is beneficial to subsequent production and manufacturing.

[0068] In some embodiments, the vapor deposition device 100 further includes: a gas distribution plate, the gas distribution plate being located on a side of the electrode plate close to the coating carrier 20;

[0069] And / or, further comprising a telescopic member, the telescopic member being located between the negative electrode plate 12 and the bottom wall of the deposition chamber 10;

[0070] And / or, a first valve is disposed on a first side wall of the deposition chamber 10, and a second valve is disposed on a second side wall opposite to the first side wall, and the coating carrier 20 enters and exits the deposition chamber 10 through the first valve and the second valve.

[0071] When a gas distribution plate is included, the process gas enters the deposition chamber 10 through the gas distribution plate, which can effectively cover the entire coating carrier 20, ensuring that each area can obtain sufficient gas supply, thereby improving the quality and uniformity of the coating.

[0072] When the telescopic member is included, the distance between the negative electrode plate 12 and the bottom wall of the deposition chamber 10 can be adjusted. Specifically, when it is necessary to appropriately enhance the electric field strength or improve the gas distribution, the telescopic member can be extended to increase the distance between the negative electrode plate 12 and the bottom wall. Conversely, when it is necessary to weaken the electric field strength or adjust the coating rate, the telescopic member can be shortened to bring the negative electrode plate 12 closer to the bottom wall of the deposition chamber 10.

[0073] When the deposition chamber 10 is provided with a first valve and a second valve, the coating carrier 20 can be allowed to enter and exit the deposition chamber 10 through the two valves, thereby facilitating the replacement and maintenance of the coating carrier 20 .

[0074] Then, users can flexibly set up according to actual needs, choose to use any of the air distribution plates, telescopic parts or valves alone, or use multiple components together to achieve different functional requirements and operating effects. Provide users with more choices and freedom to meet different scenarios and application needs.

[0075] According to the vapor deposition apparatus 100 of some embodiments, the conductive member 30 is one of an aluminum alloy sheet, a copper alloy sheet, a gold sheet, or a silver sheet.

[0076] In the vapor deposition apparatus 100, the aluminum alloy can provide good electrical conductivity, and its lower density helps to reduce the weight of the entire vapor deposition apparatus 100. In addition, the aluminum alloy also has good corrosion resistance and processing performance, which makes it very convenient to use.

[0077] In the vapor deposition apparatus 100 , the copper alloy also has high thermal conductivity and good mechanical properties. The copper alloy can transfer electricity and heat, thereby ensuring efficient operation of the vapor deposition apparatus 100 .

[0078] In the vapor deposition device 100, the gold conductive material can ensure the stable transmission of current and reduce energy loss. In addition, gold also has good corrosion resistance and can maintain stable performance in various environments.

[0079] In the vapor deposition apparatus 100 , the silver conductive material can provide excellent current transmission performance, ensuring efficient operation of the vapor deposition apparatus 100 .

[0080] According to some embodiments of the vapor deposition apparatus 100 , the first conductive portion 31 and the surface of the coating carrier 20 away from the negative electrode plate 12 are connected by threaded connection;

[0081] And / or, the first conductive portion 31 and a surface of the coating carrier 20 close to the negative electrode plate 12 are connected by threaded connection.

[0082] For example, by rotating the threaded component, a tight connection between the first conductive part 31 and the coating carrier 20 can be achieved, ensuring that the current can be stably transmitted. This threaded connection is not easy to loosen and can maintain a stable connection state.

[0083] Secondly, threaded connection is easy to install and disassemble. Compared with welding or other fixed connection methods, threaded connection does not require complicated tools or equipment, and only needs to rotate the threaded parts to connect or disconnect. This makes it more convenient and quick when maintaining and replacing parts, and improves operational efficiency.

[0084] In addition, the threaded connection also has a certain degree of adjustability. By adjusting the rotation angle and depth of the threaded component, the connection tightness between the first conductive part 31 and the coating carrier 20 can be fine-tuned to adapt to different working conditions and requirements. This adjustability helps to optimize the performance and stability of the vapor deposition device 100.

[0085] In some embodiments, the negative electrode plate 12 is connected to the ground line, so that the electrons gathered at the edge of the deposition chamber 10 and the coating carrier 20 are introduced into the negative electrode plate 12 by the conductive member 30 and are simultaneously led out through the ground line.

[0086] Below, refer to the attached Figure 1-Figure 3 , describing a vapor deposition device 100 for a silicon wafer according to a specific embodiment of the present application.

[0087] Reference Figure 1 The vapor deposition device 100 includes a deposition chamber 10 , a coating carrier 20 and a conductive member 30 .

[0088] The deposition chamber 10 includes a positive electrode plate 11 and a negative electrode plate 12 .

[0089] The positive electrode plate 11 is disposed on the top wall of the deposition chamber 10, and the negative electrode plate 12 is disposed on the bottom wall of the deposition chamber 10, and the positive electrode plate 11 and the negative electrode plate 12 are disposed opposite to each other. The coating carrier 20 is located on the side of the negative electrode plate 12 close to the positive electrode plate 11.

[0090] Reference Figure 2 The coating carrier 20 includes a containing area 25 and a coating carrier frame 26 .

[0091] The receiving area 25 includes at least one receiving groove 251 for receiving a silicon wafer.

[0092] The conductive member 30 is located between the film-plating carrier 20 and the negative electrode plate 12 , and the film-plating carrier 20 and the negative electrode plate 12 are electrically connected via the conductive member 30 .

[0093] The conductive member 30 includes a plurality of sub-conductive members 301 , and each of the plurality of sub-conductive members 301 is electrically connected to the coating carrier 20 and the negative electrode plate 12 independently.

[0094] Reference Figure 3 Each sub-conductive member 301 includes a first conductive portion 31, an extension portion 32, and a second conductive portion 33 connected in sequence. The first conductive portion 31 is electrically connected to the accommodating area 25, and the second conductive portion 33 is electrically connected to the negative electrode plate 12.

[0095] Reference Figure 2 , wherein the width of the sub-conductive member 301 is a, and the width of the gap between adjacent sub-conductive members 301 is b, satisfying a:b=1:5.

[0096] The distance between the sub-conductive element 301 located at the long side and the end of the coating carrier 20 and the edge of the coating carrier 20 is c, satisfying a:c=1:1.

[0097] The length of the sub-conductive element 301 is e, and the distance from the sub-conductive element 301 located at the short side and end of the coating carrier 20 to the edge of the coating carrier 20 is d, satisfying e:d=2:1.

[0098] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the present invention. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A silicon wafer vapor deposition device, characterized in that: include: A deposition chamber, wherein a positive electrode plate is disposed on the top wall of the deposition chamber, and a negative electrode plate is disposed on the bottom wall of the deposition chamber, and the positive electrode plate and the negative electrode plate are disposed opposite to each other; A coating carrier, the coating carrier is located on the side of the negative electrode plate facing the positive electrode plate, the coating carrier has a containing area and a coating carrier frame, the containing area has at least one containing groove for containing a silicon wafer; A conductive member is located between the coating carrier and the negative electrode plate, and the coating carrier and the negative electrode plate are electrically connected through the conductive member.

2. The vapor deposition device according to claim 1, characterized in that: The conductive member includes a first conductive portion, an extending portion, and a second conductive portion which are connected in sequence, the first conductive portion is electrically connected to the accommodating area, and the second conductive portion is electrically connected to the negative electrode plate.

3. The vapor deposition device according to claim 2, characterized in that: The first conductive portion is detachably connected to a side of the coating carrier away from the negative electrode plate; And / or, the second conductive portion is detachably connected to a side of the coating carrier plate close to the negative electrode plate, and the second conductive portion is in contact with the negative electrode plate.

4. The vapor deposition device according to any one of claims 1 to 3, characterized in that: The conductive member includes a plurality of sub-conductive members, and each of the plurality of sub-conductive members is independently electrically connected to the coating carrier plate and the negative electrode plate.

5. The vapor deposition device according to claim 4, characterized in that: The width of the sub-conductive member is a, and the width of the gap between adjacent sub-conductive members is b, satisfying a:b=1:5; and / or, the distance between the sub-conductive element located at the long side and the end of the coating carrier and the edge of the coating carrier is c, satisfying a:c=1:1; And / or, the length of the sub-conductive component is e, and the distance from the sub-conductive component located at the short side and end of the coating carrier to the edge of the coating carrier is d, satisfying e:d=2:

1.

6. The vapor deposition device according to claim 2 or 3, characterized in that: The vertical distance between the first conductive portion and the receiving groove at the edge of the coating carrier is 0 cm-2 cm.

7. The vapor deposition device according to any one of claims 1 to 3, characterized in that: The top wall of the deposition chamber has a process gas inlet, and the bottom wall of the deposition chamber has a gas outlet.

8. The vapor deposition device according to claim 7, characterized in that: Also includes: A vacuum pump is connected to the gas outlet via a pipeline.

9. The vapor deposition device according to any one of claims 1 to 3, characterized in that: Also includes: An air distribution plate, the air distribution plate is located on a side of the electrode plate close to the coating carrier plate; And / or, further comprising: a telescopic member, wherein the telescopic member is located between the negative electrode plate and the bottom wall of the deposition chamber; And / or, a first valve is disposed on a first side wall of the deposition chamber, and a second valve is disposed on a second side wall opposite to the first side wall, and the coating carrier enters and exits the deposition chamber through the first valve and the second valve.

10. The vapor deposition device according to any one of claims 1 to 3, characterized in that: The conductive member is one of an aluminum alloy sheet, a copper alloy sheet, a gold sheet or a silver sheet.

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