Laser structure based on regulation and control of double passivation layers

By adopting a high and low K combined passivation layer structure in GaN-based FP laser, the problems of high dislocation density, electron leakage and non-uniform carrier distribution within the device are solved, and the effects of reducing threshold current, improving luminous efficiency and reliability are achieved.

CN222691092UActive Publication Date: 2025-03-28TIANJIN SEMIKAL TECH CO LTD
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Patent Information

Application Number
CN202421576487.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-05
Publication Date
2025-03-28
Estimated Expiration
2034-07-05

AI Technical Summary

Technical Problem

At this stage, GaN-based Fabry-Perot (FP) lasers have problems such as large threshold current, low luminous power and poor reliability, mainly due to the high dislocation density, electron leakage and non-uniform carrier distribution within the device.

Method used

By depositing passivation layers with different dielectric constants, a laser structure with a high and low K combined passivation layer was prepared. The high K passivation layer reduces the bending of the lateral energy band inside the device, while the low K passivation layer effectively limits the light field distribution and reduces photon leakage.

Benefits of technology

This technical method effectively reduces the threshold current of the laser, improves the luminous efficiency and reliability, and improves the overall performance of the laser.

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Abstract

The utility model provides a laser structure based on regulation and control of double passivation layers, the laser structure sequentially comprises a cathode electrode, a substrate layer, a lower limiting layer, a lower waveguide layer, a quantum well active layer, an upper waveguide layer, an upper limiting layer, a ridge waveguide layer and an anode electrode along an epitaxial growth direction, the projection area is smaller than that of the upper limiting layer; a low-K passivation layer is deposited on the upper wall of the upper limiting layer and the side wall of the ridge waveguide layer, and a high-K passivation layer is deposited on the low-K passivation layer; according to the utility model, the low-K passivation layer has a relatively low refractive index and is mainly used for limiting light field distribution and reducing photon leakage; the transverse energy band in the device is regulated and controlled by using the characteristic of small partial voltage of the high-K passivation layer, so that the distribution of holes below the ridge waveguide is better limited, and the threshold current of the laser is reduced.
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