Semiconductor structure and Mini-LED display device

Abstract

The utility model provides a semiconductor structure and a Mini-LED display device, and the semiconductor structure comprises a glass substrate which comprises a first surface and a second surface opposite to the first surface, the glass substrate is internally provided with a plurality of first grooves which are recessed relative to the first surface, and a rough surface is formed on the second surface; a first reflecting mirror layer is arranged on the first surface between the adjacent first grooves; and a plurality of thin film LED chips, wherein the light emitting surfaces of the plurality of thin film LED chips are respectively bonded into the first grooves. The problem that the thickness of a backlight product is large due to the structural design that a glass substrate is usually placed above an LED chip array is solved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor devices, and in particular to a semiconductor structure and a Mini-LED display device. Background Art

[0002] At present, mainstream backlight sources can be roughly divided into two types: edge light and direct light. Generally speaking, the contrast and brightness uniformity provided by direct light are better than those of edge light.

[0003] The light source in traditional designs is usually a blue or white LED chip. In order to make the backlight brightness uniform, the optical glass substrate in the thin film flip chip structure is usually placed above the LED chip array. The distance between the glass substrate and the LED array is called the "optical distance".

[0004] However, the optical glass substrate is usually placed above the LED chip array, and the thickness of the backlight product is relatively large. Utility Model Content

[0005] The technical problem solved by the utility model is that the glass substrate is usually placed above the LED chip array, and the thickness of the backlight product is relatively large. A semiconductor structure is provided to solve the problem that the glass substrate is usually placed above the LED chip array, and the thickness of the backlight product is relatively large.

[0006] In order to solve the above technical problems, the present invention provides a semiconductor structure, including:

[0007] A glass substrate, comprising a first surface and a second surface opposite to the first surface, wherein the glass substrate has a plurality of first grooves recessed relative to the first surface, a rough surface is formed on the second surface, and a first reflector layer is disposed on the first surface between adjacent first grooves;

[0008] A plurality of thin-film LED chips, wherein the light-emitting surfaces of the plurality of thin-film LED chips are respectively bonded into the first grooves.

[0009] Optionally, the light emitting surfaces of the plurality of thin-film LED chips are respectively bonded into the first groove by optical glue.

[0010] Optionally, the refractive index of the optical glue is above 1.5.

[0011] Optionally, the reflectivity of the first reflector layer is greater than 95% of the wavelength band of the light source.

[0012] Optionally, the first reflector layer is white glue.

[0013] Optionally, an LED driving circuit is also provided on the first surface for driving the plurality of thin-film LED chips.

[0014] Optionally, the semiconductor structure further includes a plurality of bonding wires, and the thin-film LED chip further includes a first electrode and a second electrode, and the first electrode and the second electrode are electrically connected to the LED driving circuit through the bonding wires respectively.

[0015] Optionally, the light transmittance of the glass substrate in the blue light band is greater than 90%.

[0016] Optionally, a width of the bottom of the first groove parallel to the first surface is greater than 0.01 mm.

[0017] Optionally, the spacing between the tops of a plurality of the first grooves is greater than 0.1 mm.

[0018] Optionally, an angle between the side wall of the first groove and the bottom of the first groove is greater than 30°.

[0019] Optionally, the glass substrate further has a plurality of second grooves recessed relative to the second surface, and the second grooves are located between adjacent first grooves.

[0020] Optionally, the glass substrate between adjacent first grooves forms an irregular roughening structure or a regular pattern structure.

[0021] The regular graphic structure is a regular cylindrical structure or a regular truncated cone structure.

[0022] Optionally, a width of the bottom of the second groove parallel to the second surface is greater than 0.01 mm.

[0023] Optionally, the spacing between the tops of a plurality of the second grooves is greater than 0.005 mm.

[0024] Optionally, an angle between the side wall of the second groove and the bottom of the second groove is greater than 30°.

[0025] Optionally, a distance between adjacent first grooves and second grooves in a direction parallel to the second surface is greater than 0.05 mm.

[0026] Optionally, the second surface further includes a plurality of second reflective layers.

[0027] Optionally, the light transmittance of the second reflective layer is 10% to 90%, and the reflectivity is 10% to 90%.

[0028] An embodiment of the present invention further provides a Mini-LED display device, comprising the semiconductor structure described in the aforementioned embodiment of the present invention.

[0029] Compared with the prior art, the technical solution of the embodiment of the utility model has the following beneficial effects:

[0030] The semiconductor structure provided by the utility model reduces the distance between the thin film LED chips and the glass substrate by bonding the thin film LED chips to the first groove of the glass substrate; in addition, the thickness of the product (such as a Mini-LED display device) is further reduced, thereby meeting the thickness requirement of the thin film LED chip. At the same time, the glass substrate having the first groove and the rough surface on the second surface increases the light emission angle of the chip, and the first reflector layer arranged on the first surface also increases the brightness of the chip.

[0031] Furthermore, the driving circuit bonded on the first surface of the glass substrate eliminates the need for a PCB board or a glass substrate for driving the thin-film LED chip, thereby reducing the cost of the direct-type backlight.

[0032] Furthermore, due to the use of optical glue with a high refractive index for bonding, optical diffraction is avoided through coupling between light and the glass substrate, and the light output uniformity of the glass substrate is improved.

[0033] Furthermore, the glass substrate also has a plurality of second grooves recessed relative to the second surface, which further increases the light emission angle of the semiconductor structure.

[0034] Furthermore, the semiconductor structure also includes a plurality of second reflective layers located on the surface of the second surface, which are used to reflect back the light in the thin-film LED chip that has not yet been converted in color for further conversion, thereby improving the color conversion efficiency and further improving the luminous brightness of the semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a schematic diagram of a semiconductor structure provided in one embodiment of the utility model;

[0036] Figure 2 is a schematic diagram of a semiconductor structure provided in another embodiment of the present invention Figure 1 ;

[0037] Figure 3 is a schematic diagram of a semiconductor structure provided in another embodiment of the present invention Figure 2 ;

[0038] Figure 4 is a schematic diagram of a semiconductor structure provided in another embodiment of the present invention Figure 3 . DETAILED DESCRIPTION

[0039] As described in the background art, the structure in which the optical glass substrate is usually placed above the LED chip array increases the thickness of the backlight product.

[0040] In order to solve the above problems, an embodiment of the utility model provides a semiconductor structure, including: a glass substrate, including a first surface and a second surface opposite to the first surface, the glass substrate having a plurality of first grooves recessed relative to the first surface, and a rough surface formed on the second surface; and a first reflector layer is arranged on the first surface between adjacent first grooves; and a plurality of thin-film LED chips, the light-emitting surfaces of the plurality of thin-film LED chips are respectively bonded to the first grooves.

[0041] By bonding a plurality of thin-film LED chips to the first grooves designed in the glass substrate, the thickness between the plurality of thin-film LED chips and the glass substrate and the thickness of the final product (such as a Mini-LED display device) are reduced. At the same time, the plurality of first grooves designed on the glass substrate increase the light output angle of the thin-film LED chip. A reflector layer is provided on the first surface of the glass substrate, which also increases the luminous brightness of the thin-film LED chip.

[0042] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0043] Figure 1 It is a schematic diagram of a semiconductor structure provided in one embodiment of the utility model.

[0044] Please refer to Figure 1 , an embodiment of the utility model provides a semiconductor structure, including:

[0045] The glass substrate 1 comprises a first surface 101 and a second surface 102 opposite to the first surface 101 . The glass substrate 1 has a plurality of first grooves 2 recessed relative to the first surface 101 .

[0046] The glass substrate 1 is used to carry the thin film LED chip. A plurality of first grooves 2 are formed on the first surface 101 of the glass substrate 1, so that a plurality of convex structures are formed between the plurality of first grooves 2. When the thin film LED chip is fixed in the first grooves 2, the glass substrate 1 provided with the plurality of first grooves 2 can improve the light emission angle of the thin film LED chip.

[0047] It is feasible that the light transmittance of the glass substrate 1 in the blue light band is greater than 90%.

[0048] The width of the bottom of the first groove 2 parallel to the first surface 101 is greater than 0.01 mm. The width here refers to the width of the bottom of the first groove 2 parallel to the paper surface.

[0049] The spacing between the tops of the plurality of first grooves 2 is greater than 0.1 mm. The spacing here refers to the distance between any point in the first groove 2 and another point at the same position in the adjacent first groove 2 .

[0050] In a preferred embodiment, the angle between the side wall of the first groove 2 and the bottom of the first groove 2 is greater than 30°. The angle here refers to the angle between the side wall of the first groove 2 and the direction parallel to the bottom of the first groove.

[0051] When the angle is greater than 30°, the improvement of the light output angle of the thin-film LED chip is more obvious and effective.

[0052] A rough surface 111 is formed on the second surface 102 ; and a first reflector layer 3 is disposed on the first surface 101 between adjacent first grooves 2 .

[0053] The rough surface 111 is used to realize periodic light emission of the thin film LED chip on the second surface 102 of the glass substrate, thereby realizing uniform light emission of the glass substrate.

[0054] The first reflector layer 3 is used to reflect the light beam to improve the light output brightness of the thin film LED chip.

[0055] The reflectivity of the first reflector layer 3 is greater than 95% of the light source wavelength band.

[0056] The first reflector layer 3 is white glue.

[0057] A plurality of thin-film LED chips, wherein the light-emitting surfaces of the plurality of thin-film LED chips are respectively bonded into the first grooves 2 .

[0058] In a preferred embodiment, the light emitting surfaces of the plurality of thin-film LED chips are respectively bonded into the first groove 2 by optical glue.

[0059] The optical glue acts as an adhesive between the light emitting surface of the thin-film LED chip and the bottom surface of the first groove 2, thereby fixing the Harima LED chip and the bottom surface of the first groove 2. At the same time, it can couple the light with the glass substrate. The optical glue avoids optical diffraction, thereby ensuring the uniformity of light emission of the glass substrate.

[0060] The refractive index of the optical glue is above 1.5.

[0061] The semiconductor structure may also be provided with a light guide plate, and the light guide plate is directly bonded to the second surface 102 of the glass substrate 1. A quantum dot film and a prism: wherein the quantum dot film is provided on the light guide plate, and the prism is provided on the quantum dot film.

[0062] A lead splicing structure 11 is also provided on the side wall of the glass substrate 1 as an electrical lead-out structure of the thin-film LED chip, and is used to electrically connect the thin-film LED driver chip with other components.

[0063] The first surface 101 is also provided with an LED driving circuit 6 for driving the plurality of thin-film LED chips.

[0064] The LED driving circuit 6 is located on the first surface 101, eliminating the need for a PCB board or a glass substrate for driving the thin-film LED chip, thereby reducing the cost of the direct-type backlight.

[0065] The semiconductor structure further includes a plurality of bonding wires 5 , and the thin-film LED chip further includes a first electrode and a second electrode. The first electrode and the second electrode are electrically connected to the LED driving circuit 6 through the bonding wires 5 .

[0066] The LED driving circuit 6 includes a plurality of welding points 62, and the plurality of welding points 62 are respectively connected to the first electrode or the second electrode so as to weld the LED driving circuit 6 to the plurality of thin-film LED chips; lead splicing structures 61 are also provided at both ends of the LED driving circuit 6 as electrical lead-out structures for electrically connecting the LED driving circuit 6 with other components.

[0067] In a specific example, the LED driving circuit further includes a PCB circuit board, and a plurality of the welding points 62 are welded on the LED driving circuit.

[0068] In a specific example, the thin film LED chip is a thin film flip-chip LED chip. In practical applications, the thin film flip-chip LED chip structure provided by the utility model is particularly suitable for constructing a local dynamic LCD backlight structure. Of course, it should be appreciated that the utility model is not limited to this, and the thin film flip-chip LED chip structure provided by the utility model has many other application scenarios, as long as the thin film flip-chip LED chip structure of the utility model is applied, it is within the protection scope of the utility model.

[0069] In summary, the technical solution provided by this embodiment reduces the thickness between the thin film LED chips and the glass substrate by directly fixing the thin film LED chips in the glass substrate with the first grooves, and at the same time, the glass substrate with the first groove structure and the second surface of the glass substrate is set as a rough surface, so that the light output angle of the thin film LED chip set in the first groove is increased. In addition, the first reflector layer is formed on the first surface of the glass substrate, which increases the utilization rate of the light beam emitted by the thin film LED chip, thereby improving the luminous brightness of the semiconductor structure.

[0070] Figures 2 to 4FIG. 4 is a schematic diagram of a semiconductor structure according to another embodiment of the present invention.

[0071] In another embodiment of the present invention, a semiconductor structure is provided. The difference between this embodiment and the previous embodiment is that the glass substrate in this embodiment further has a plurality of second grooves recessed relative to the second surface.

[0072] Please refer to Figure 2 , the same as the above-mentioned embodiment, the semiconductor structure includes: a glass substrate 1, including a first surface 101 and a second surface 102 opposite to the first surface 101, and the glass substrate 1 has a plurality of first grooves 2 recessed relative to the first surface 101. A rough surface 111 is formed on the second surface 102; and a first reflector layer 3 is arranged on the first surface 101 between adjacent first grooves 2. A plurality of thin-film LED chips, the light-emitting surfaces of the plurality of thin-film LED chips are respectively bonded to the first grooves 2. A lead splicing structure 11 is also arranged on the side wall of the glass substrate 1. An LED driving circuit 6 is also arranged on the first surface 101 for driving the plurality of thin-film LED chips.

[0073] The semiconductor structure further includes a plurality of bonding wires 5, and the thin-film LED chip further includes a first electrode and a second electrode, and the first electrode and the second electrode are respectively electrically connected to the LED driving circuit 6 through the bonding wires 5. The LED driving circuit 6 includes a plurality of welding points 62, and the plurality of welding points 62 are respectively connected to the first electrode or the second electrode to weld the LED driving circuit 6 to the plurality of thin-film LED chips; a lead splicing structure 61 is also provided at both ends of the LED driving circuit 6. The plurality of welding points 62 are welded to the LED driving circuit.

[0074] In addition, based on the structure of the aforementioned embodiment, the glass substrate 1 further has a plurality of second grooves 8 recessed relative to the second surface 102 , and the second grooves 8 are located between adjacent first grooves 2 .

[0075] The width of the bottom of the second groove parallel to the second surface is greater than 0.01 mm.

[0076] The spacing between the tops of a plurality of the second grooves is greater than 0.005 mm.

[0077] An angle between the side wall of the second groove and the bottom of the second groove is greater than 30°.

[0078] The spacing between adjacent first grooves and second grooves in the direction parallel to the second surface is greater than 0.05 mm. The meanings of the above dimensions and angles are similar to those in the above embodiments, and the utility model will not elaborate on them here.

[0079] An irregular roughening structure or a regular pattern structure is formed on the glass substrate between adjacent first grooves.

[0080] The regular graphic structure is a regular cylindrical structure or a regular truncated cone structure.

[0081] In one embodiment, the regular patterned structure is Figure 2 The truncated cone structure shown.

[0082] Please refer to Figure 3 In another embodiment, the regularly patterned structure is a cylindrical structure.

[0083] Please refer to Figure 4 In other implementations of this embodiment, in the semiconductor structure, the second surface further includes a plurality of second reflective layers 7.

[0084] The second reflective layer is used to reflect the light emitted from the thin film LED chip back to perform sufficient color conversion, thereby improving the color conversion efficiency and the luminous brightness of the semiconductor structure.

[0085] The light transmittance of the second reflective layer is 10% to 90%, and the reflectivity is 10% to 90%.

[0086] In summary, compared with the aforementioned embodiments, the technical solution provided in this embodiment can also reduce the thickness between a number of thin-film LED chips and the glass substrate, increase the light emission angle of the thin-film LED chip, increase the utilization rate of the light beam emitted by the thin-film LED chip, and thereby improve the luminous brightness of the semiconductor structure; in addition, a number of second grooves arranged on the second surface further increase the light emission angle of the thin-film LED chip.

[0087] An embodiment of the present invention further provides a Mini-LED display device, comprising the semiconductor structure described in any one of the aforementioned embodiments of the present invention.

[0088] Although the utility model is disclosed as above, the utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model shall be subject to the scope defined by the claims.

Claims

1. A semiconductor structure, characterized in that: include: A glass substrate, comprising a first surface and a second surface opposite to the first surface, wherein the glass substrate has a plurality of first grooves recessed relative to the first surface, a rough surface is formed on the second surface, and a first reflector layer is disposed on the first surface between adjacent first grooves; A plurality of thin-film LED chips, wherein the light-emitting surfaces of the plurality of thin-film LED chips are respectively bonded into the first grooves.

2. The semiconductor structure according to claim 1, characterized in that: The light emitting surfaces of the plurality of thin-film LED chips are respectively bonded into the first grooves by optical glue.

3. The semiconductor structure according to claim 2, characterized in that: The refractive index of the optical glue is above 1.

5.

4. The semiconductor structure according to claim 1, wherein: The reflectivity of the first reflector layer is greater than 95% of the wavelength band of the light source.

5. The semiconductor structure according to claim 1, characterized in that: The first reflector layer is white glue.

6. The semiconductor structure according to claim 1, characterized in that The first surface is also provided with an LED driving circuit for driving the plurality of thin-film LED chips.

7. The semiconductor structure according to claim 6, characterized in that: The semiconductor structure further includes a plurality of bonding wires, and the thin-film LED chip further includes a first electrode and a second electrode. The first electrode and the second electrode are electrically connected to the LED driving circuit through the bonding wires respectively.

8. The semiconductor structure according to claim 1, wherein: The light transmittance of the glass substrate in the blue light band is greater than 90%.

9. The semiconductor structure according to claim 1, wherein: The width of the bottom of the first groove parallel to the first surface is greater than 0.01 mm.

10. The semiconductor structure according to claim 1, wherein: The spacing between the tops of the first grooves is greater than 0.1 mm.

11. The semiconductor structure according to claim 1, wherein: An angle between the side wall of the first groove and the bottom of the first groove is greater than 30°.

12. The semiconductor structure according to claim 1, wherein: The glass substrate also has a plurality of second grooves recessed relative to the second surface, and the second grooves are located between adjacent first grooves.

13. The semiconductor structure according to claim 1, characterized in that The glass substrate located between adjacent first grooves forms an irregular roughening structure or a regular pattern structure.

14. The semiconductor structure according to claim 13, characterized in that: The regular graphic structure is a regular cylindrical structure or a regular truncated cone structure.

15. The semiconductor structure according to claim 12, wherein: The width of the bottom of the second groove parallel to the second surface is greater than 0.01 mm.

16. The semiconductor structure according to claim 12, wherein: The spacing between the tops of a plurality of the second grooves is greater than 0.005 mm.

17. The semiconductor structure according to claim 12, wherein: An angle between the side wall of the second groove and the bottom of the second groove is greater than 30°.

18. The semiconductor structure according to claim 12, wherein: The distance between adjacent first grooves and second grooves in a direction parallel to the second surface is greater than 0.05 mm.

19. The semiconductor structure according to claim 12, wherein: The second surface also includes a plurality of second reflective layers.

20. The semiconductor structure according to claim 19, wherein: The light transmittance of the second reflective layer is 10% to 90%, and the reflectivity is 10% to 90%.

21. A Mini-LED display device, characterized in that: A semiconductor structure comprising any one of claims 1 to 20.

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