Display device

Abstract

There is provided a display device including: a substrate including a display area and a first non-display area around the display area; a light emitting element on the substrate in the display area; a lower inorganic encapsulation film on the substrate in the display area and the first non-display area; the organic packaging film is positioned on the lower inorganic packaging film; an upper inorganic encapsulation film on the organic encapsulation film; and a first dam between the lower inorganic encapsulation film and the upper inorganic encapsulation film in the first non-display area, in which a first side surface of the first dam is in contact with the organic encapsulation film, and a second side surface of the first dam different from the first side surface of the first dam is in contact with the upper inorganic encapsulation film. Accordingly, the display device has a non-display area whose width is small and has excellent or appropriate moisture permeation prevention performance.

Description

[0001] This application claims the priority and benefits of Korean Patent Application No. 10-2023-0104118, filed with the Korean Intellectual Property Office on August 9, 2023, the entire content of which is incorporated herein by reference. Technical Field

[0002] Embodiments of the present disclosure described herein relate to a display device and a method for manufacturing the display device. Background Art

[0003] With the development of the information society / technology, the demand or expectation for a display device for displaying an image has increased and diversified. The display device may be a flat panel display device (such as a liquid crystal display device, a field emission display device, or an organic light emitting display device). Among such flat panel display devices, since each pixel of the display panel includes one or more light emitting elements that can be configured to emit light by themselves, the light emitting display device can display an image without a backlight unit that supplies light to the display panel.

[0004] The display device includes a display area for displaying an image and a non-display area provided around the display area (e.g., provided to surround the display area). Recently, in order to increase the immersion in the display area and increase the aesthetic appearance of the display device, the width of the non-display area has been reduced. Summary of the Utility Model

[0005] An object of the present utility model is to provide a display device having a non-display area with a small width and having excellent or suitable moisture penetration prevention performance, and a method for manufacturing the display device.

[0006] However, aspects of the present disclosure are not limited to the aspects set forth herein. Through reference to the detailed description of the present disclosure given herein, the above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains.

[0007] According to an embodiment of the present disclosure, a display device includes: a substrate including a display area and a first non-display area provided around the display area; a light emitting element provided on the substrate in the display area; a lower inorganic encapsulation film provided on the substrate in the display area and the first non-display area; an organic encapsulation film provided on the lower inorganic encapsulation film; an upper inorganic encapsulation film provided on the organic encapsulation film; and a first dam provided between the lower inorganic encapsulation film and the upper inorganic encapsulation film in the first non-display area, wherein a first side surface of the first dam contacts the organic encapsulation film, and a second side surface of the first dam different from the first side surface of the first dam contacts the upper inorganic encapsulation film.

[0008] According to an embodiment, a lower surface of the first dam may contact the lower inorganic encapsulation film.

[0009] According to an embodiment, the first dam may include a polysiloxane.

[0010] According to an embodiment, the glass transition temperature of the first dam may be from about -180 °C to about -50 °C.

[0011] According to an embodiment, the density of the first dam may be from about 0.05 g / mL to about 5 g / mL.

[0012] According to an embodiment, the Young's modulus of the first dam may be from 0.01 MPa to 1.0 MPa.

[0013] According to an embodiment, the first dam may include a compound represented by any one of Formula 1 to Formula 3:

[0014] Formula 1

[0015]

[0016] Formula 2

[0017]

[0018] Formula 3

[0019] ,

[0020] wherein a is an integer from 1 to 3,

[0021] m is an integer of 1 or greater,

[0022] R1 is a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or is represented by Formula S1,

[0023] Formula S1

[0024] ,

[0025] n is an integer of 1 or greater,

[0026] R2 to R4 may each independently be the same as or different from each other, and may each independently be a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkenyl group, or an oxygen atom, and may optionally be connected to adjacent substituents to form a substituted or unsubstituted ring, and

[0027] the substituent in "substituted or unsubstituted" is one or more substituents selected from the group consisting of a deuterium atom, a halogen atom, a cyano group, a nitro group, an amino group (amine group), a silyl group, an oxy group, a thio group, a sulfinyl group, a sulfonyl group, a carbonyl group, a boron group, a phosphinyl oxide group, a phosphinyl sulfide group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a hydrocarbon ring group, an aryl group, and a heterocyclic group, and / or a substituent in which two or more groups selected from the group are connected to each other.

[0028] According to an embodiment, the display device may further include a groove located between the light-emitting element and the first dam.

[0029] According to an embodiment, the substrate may further include a through hole and a second non-display area, the second non-display area is disposed between the through hole and the display area, the display device further includes a first hole dam, the first hole dam is disposed between the lower inorganic encapsulation film and the upper inorganic encapsulation film in the second non-display area, a first side surface of the first hole dam contacts the organic encapsulation film, and a second side surface of the first hole dam different from the first side surface of the first hole dam contacts the upper inorganic encapsulation film.

[0030] According to an embodiment, the first hole dam may include the same material as the first dam.

[0031] According to an embodiment, the display device may further include a hole groove located between the light-emitting element and the first hole dam.

[0032] According to an embodiment of the present disclosure, a display device includes: a substrate including a display area and a first non-display area on an outer periphery (e.g., surrounding the outer side of the display area) of the display area; a lower inorganic encapsulation film disposed on the substrate in the display area and the first non-display area; an organic encapsulation film disposed on the lower inorganic encapsulation film; a first dam disposed on the substrate in the first non-display area and including polysiloxane; and an upper inorganic encapsulation film disposed on the organic encapsulation film and the first dam, wherein a first side surface of the first dam overlaps with the organic encapsulation film in a thickness direction of the substrate (e.g., in a plan view), and a second side surface of the first dam different from the first side surface of the first dam does not overlap with the organic encapsulation film in the thickness direction of the substrate.

[0033] According to an embodiment, the first side surface and the second side surface of the first dam may overlap with the upper inorganic encapsulation film and the lower inorganic encapsulation film in the thickness direction of the substrate.

[0034] According to an embodiment, a component of the first dam in a region adjacent to the substrate and a component of the first dam in a region adjacent to the upper inorganic encapsulation film may be the same as each other.

[0035] According to an embodiment, the first dam may include a compound represented by any one of Formula 1 to Formula 3:

[0036] Formula 1

[0037]

[0038] Formula 2

[0039]

[0040] Formula 3

[0041] ,

[0042] wherein, a is an integer from 1 to 3,

[0043] m is an integer of 1 or greater,

[0044] R1 is a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or is represented by formula S1,

[0045] Formula S1

[0046] ,

[0047] n is an integer of 1 or greater,

[0048] R2 to R4 may each independently be the same as or different from each other, and may each independently be a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkenyl group or an oxygen atom, and are optionally connected to adjacent substituents to form a substituted or unsubstituted ring, and

[0049] the substituents in "substituted or unsubstituted" are one or more substituents selected from the group consisting of a deuterium atom, a halogen atom, a cyano group, a nitro group, an amino group (amine group), a silyl group, an oxy group, a thio group, a sulfinyl group, a sulfonyl group, a carbonyl group, a boron group, a phosphinyl oxide group, a phosphinyl sulfide group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a hydrocarbon ring group, an aryl group and a heterocyclic group and / or substituents in which two or more groups selected from the said group are connected to each other.

[0050] According to an embodiment of the present disclosure, a method for manufacturing a display device includes the following steps: applying (e.g., forming) a light-emitting element on a substrate; depositing an inorganic encapsulation film under the light-emitting element; applying a dam composition onto the inorganic encapsulation film under the non-display area surrounding the display area in which the light-emitting element is disposed; and applying an organic encapsulation composition onto the inorganic encapsulation film under the display area.

[0051] According to an embodiment, the viscosity of the dam composition may be greater than the viscosity of the organic encapsulation composition.

[0052] According to an embodiment, in the step of applying the dam composition onto the inorganic encapsulation film under, an inkjet dispenser may be used.

[0053] According to an embodiment, a method for manufacturing a display device may include the following steps: curing the organic encapsulation composition to form an organic encapsulation film; curing the dam composition to form a dam; and depositing an inorganic encapsulation film on the organic encapsulation film and the dam.

[0054] According to an embodiment, in the step of curing the organic encapsulation composition to form an organic encapsulation film, light may be used to cure the organic encapsulation composition, and in the step of curing the dam composition to form a dam, heat may be used to cure the dam composition.

[0055] According to an embodiment, the display device may have improved moisture penetration prevention performance.

[0056] According to an embodiment, the display device may have a non-display area with a small width.

[0057] The effects of the present disclosure are not limited to the above effects, and one or more other suitable effects are included in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] The above and other aspects and features of the present disclosure will become more apparent by describing embodiments of the present disclosure in more detail with reference to the accompanying drawings, in which:

[0059] Figure 1 is a perspective view showing a display device according to an embodiment;

[0060] Figure 2 is a plan view showing a display device according to an embodiment;

[0061] Figure 3 is a cross-sectional view showing an example of a display device taken along line I-I' of Figure 1 ;

[0062] Figure 4 is a cross-sectional view showing an example of a display device in which Figure 3 the circuit board is bent;

[0063] Figure 5 is a cross-sectional view of a display area of a display device according to an embodiment;

[0064] Figure 6 is Figure 2 an enlarged plan view of area A1 in

[0065] Figure 7 is a cross-sectional view showing an example of a display device taken along line II-II' of Figure 6 ;

[0066] Figure 8 is an enlarged cross-sectional view of Figure 7 area A3 of a display panel showing an example;

[0067] Figure 9 is an enlarged plan view of an edge area of a display device according to another embodiment;

[0068] Figure 10 is a cross-sectional view of a display panel according to Figure 9 ;

[0069] Figure 11 is Figure 2An enlarged plan view of the through-hole portion (i.e., region A2);

[0070] Figure 12 is a cross-sectional view showing an example of a display device taken along line III-III'; Figure 11

[0071] Figure 13 is an enlarged cross-sectional view of region A4 of a display panel showing an example; Figure 12

[0072] Figure 14 is an enlarged plan view of a through-hole and a surrounding region (e.g., a region around the through-hole) of a display device according to another embodiment;

[0073] Figure 15 is a cross-sectional view of a display panel according to; Figure 14

[0074] Figure 16 is a flowchart showing a process for manufacturing a display device according to an embodiment; and

[0075] Figures 17 to 25 is a cross-sectional view or a plan view sequentially showing a process for manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0076] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the present disclosure are shown. However, the present disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.

[0077] It should also be understood that when a layer is referred to as being "on" another layer or a substrate, it can be directly on the other layer or the substrate, or an intermediate layer may also be present. Throughout the specification, the same reference numerals denote the same components.

[0078] It will be understood that although the terms "first", "second", etc. may be used herein to describe one or more suitable elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element discussed herein may be referred to as a second element without departing from the teachings of the present disclosure. Similarly, a second element may also be referred to as a first element.

[0079] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0080] Figure 1 is a perspective view showing a display device according to an embodiment. Figure 2 ​​​It is a plan view showing a display device according to an embodiment.

[0081] Referring to Figure 1 , the display device 10 according to an embodiment is a device that displays moving images or still images, and can be used as a display screen for one or more suitable products (such as televisions, laptop computers, monitors, billboards, and Internet of Things (IoT) devices) and portable electronic devices (such as mobile phones, smartphones, tablet personal computers (PCs), smartwatches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, and ultra-mobile PCs (UMPCs)).

[0082] The display device 10 according to an embodiment may be a light-emitting display device (such as an organic light-emitting display device using organic light-emitting diodes, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including an inorganic semiconductor, and a micro-light-emitting display device using micro-light-emitting diodes or nano-light-emitting diodes (micro-LEDs or nano-LEDs)). Hereinafter, the display device 10 being an organic light-emitting display device will be mainly described, but the present disclosure is not limited thereto.

[0083] The display device 10 according to an embodiment may include a display panel 100, a display driver 200, and a circuit board 300.

[0084] In a plan view, the display panel 100 may be formed in a rectangular shape having a long side in a first direction (X-axis direction) and a short side in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). The corners where the long side in the first direction (X-axis direction) and the short side in the second direction (Y-axis direction) meet may be right angles or circular with curvature. The shape of the display panel 100 in a plan view is not limited to a rectangular shape, and may be other polygonal shapes, circular shapes, or elliptical shapes.

[0085] The display panel 100 may be formed flat, but is not limited thereto. For example, the display panel 100 may include curved surface portions formed at its left and right ends and having a constant curvature or a variable curvature. In some embodiments, the display panel 100 may be flexibly formed to be curved, bent, folded, or rolled up.

[0086] The display panel 100 may include a display area DA for displaying an image and a non-display area NDA for not displaying an image.

[0087] The display area DA may occupy most of the area of the display panel 100. The display area DA may be provided at the center of the display panel 100. In order to display an image, pixels each including a plurality of emission areas may be provided in the display area DA.

[0088] The non-display area NDA may include a first non-display area NDA1 and a second non-display area NDA2. The first non-display area NDA1 may be set adjacent to the display area DA. The first non-display area NDA1 may be an area outside the display area DA. The first non-display area NDA1 may be set to surround the display area DA. The first non-display area NDA1 may be an edge area of the display panel 100.

[0089] The through hole TH may be selectively provided inside the display area DA. The second non-display area NDA2 may be positioned to surround the through hole TH and may be provided between the display area DA and the through hole TH. The through hole TH is a hole through which light can be transmitted, and may be an area in which an optical device OPD (see Figure 3 ) is provided.

[0090] Referring to Figure 1 and Figure 2 , the first non-display area NDA1 may include a display pad (also known as a "pad" or "bonding pad") PD, a display driver 200, and a circuit board 300.

[0091] The display pad PD may be provided at one edge of the display panel 100. For example, the display pad PD may be provided at the lower edge of the display panel 100. The display pad PD may be connected to the display driver 200 and the circuit board 300.

[0092] The display driver 200 may generate and output signals and voltages for driving the display panel 100. For example, the display driver 200 may generate and output data voltages, source voltages, and / or scan timing signals, etc. The display driver 200 may supply the source voltage to the power line and supply the gate control signal to the gate driver.

[0093] The display driver 200 may be provided between the display pad PD and the display area DA in the first non-display area NDA1. The display driver 200 may be attached to the first non-display area NDA1 of the display panel 100 in a chip on glass (COG) manner. In some embodiments, the display driver 200 may be attached to the circuit board 300 in a COP (chip on plastic) manner.

[0094] The circuit board 300 may be provided on one edge of the display panel 100 and may be provided on the display pad PD. The circuit board 300 may be attached to the display pad PD using a conductive bonding member (such as an anisotropic conductive film and an anisotropic conductive adhesive). Thus, the circuit board 300 may be electrically connected to the signal line of the display panel 100. Each of the circuit boards 300 may be a flexible printed circuit board or a flexible film (such as a chip on film).

[0095] In some embodiments, the bending region may be disposed between the display driver 200 and the display area DA in the first non-display area NDA1. The bending region may be a region where the display driver 200 and the circuit board 300 are bent to be disposed below the display panel 100. The display driver 200 and the circuit board 300 bent through the bending region may be stacked with the display area DA in the third direction (Z-axis direction).

[0096] Figure 3 is a cross-sectional view showing an example of a display device taken along line I-I'. Figure 1 is a cross-sectional view showing an example of a display device in which the circuit board is bent. Figure 4 is a view showing where Figure 3 the circuit board is bent.

[0097] Referring to Figure 3 , the display device 10 according to an embodiment may include a display panel 100, a polarizing film PF, a cover window CW, and a panel lower cover PB. The display panel 100 may include a substrate SUB, a thin film transistor layer TFTL (see Figure 5 ), a light emitting element layer EML (see Figure 5 ), a thin film encapsulation layer ENC, a touch sensor layer SENL, and an organic planarization layer ORL.

[0098] The substrate SUB may be a base substrate or a base member. The substrate SUB may be a flexible substrate that can be bent, folded, and curled. For example, the substrate SUB may include a polymer resin (such as polyimide (PI)), but is not limited thereto. In another embodiment, the substrate SUB may include a glass material or a metal material.

[0099] A display layer DISL may be disposed on the upper surface of the substrate SUB. The display layer DISL may be a layer for displaying an image. The display layer DISL may include a thin film transistor layer TFTL (see Figure 5 ) in which thin film transistors are formed and a light emitting element layer EML (see Figure 5 ) in which light emitting elements for emitting light are disposed in an emission region.

[0100] The thin film transistor layer TFTL may be disposed on the substrate SUB. The thin film transistor layer TFTL may include a plurality of thin film transistors. Each of the thin film transistors may include a semiconductor region, a source electrode, a drain electrode, and a gate electrode. In some embodiments, the thin film transistor layer TFTL may further include scan lines, data lines, and / or power lines, etc. in the display region. A scan driving circuit unit for outputting a scan signal to the scan lines and / or fan-out lines for connecting the data lines to a driving integrated circuit (IC) to each other may be disposed in the non-display area NDA.

[0101] The light-emitting element layer EML can be disposed on the thin-film transistor layer TFTL. The light-emitting element layer EML can include a plurality of light-emitting elements ED each including a pixel electrode, a common electrode, and a light-emitting layer to emit light (see Figure 5 ), and a pixel defining layer PDL that defines pixels (see Figure 5 ). The plurality of light-emitting elements can be disposed in the display area DA.

[0102] The thin-film encapsulation layer ENC can be located on the light-emitting element layer EML. The thin-film encapsulation layer ENC can cover the upper surface and the side surfaces of the light-emitting element layer EML so as to prevent or reduce the penetration of oxygen or moisture into the light-emitting element layer EML. The thin-film encapsulation layer ENC can include at least one inorganic film and at least one organic film.

[0103] The touch sensor layer SENL can be disposed on the thin-film encapsulation layer ENC. The touch sensor layer SENL can include sensor electrodes. The touch sensor layer SENL can sense a user's touch using the sensor electrodes.

[0104] The organic planarization layer ORL can be disposed on the touch sensor layer SENL. The organic planarization layer ORL can planarize the steps therebelow to facilitate the attachment of the polarizing film PF thereto and prevent or reduce the reflection of external light caused by the polarizing film PF from being viewed by the user.

[0105] The polarizing film PF can be disposed on the organic planarization layer ORL. The polarizing film PF can be disposed on the display panel 100 to reduce external light reflection. The polarizing film PF can include a first substrate member, a linear polarizer, a phase retardation film (such as a λ / 4 wave plate (quarter-wave plate)), and a second substrate member. The first substrate member, the phase retardation film, the linear polarizer, and the second substrate member of the polarizing film PF can be sequentially stacked on the display panel 100.

[0106] The cover window CW can be disposed on the polarizing film PF. The cover window CW can be attached to the polarizing film PF through a transparent adhesive member (such as an optically clear adhesive (OCA) film).

[0107] The panel bottom cover PB can be disposed on the lower surface of the substrate SUB. The lower surface of the substrate SUB can be the surface opposite to the upper surface of the substrate SUB. In other words, the lower surface of the substrate SUB can be the surface opposite to the surface on which the thin-film transistor layer TFTL, the light-emitting element layer EML, the thin-film encapsulation layer ENC, and the touch sensor layer SENL are located. The panel bottom cover PB can be attached to the lower surface of the substrate SUB through an adhesive member. The adhesive member can be a pressure-sensitive adhesive (PSA).

[0108] The bottom cover PB of the panel may include at least one of a light-blocking member for absorbing light incident from the outside, a buffer member for absorbing an impact from the outside, and a heat-dissipating member for effectively dissipating heat.

[0109] The display device 10 may further include an optical device OPD. The optical device OPD may be configured to emit or receive light in infrared, ultraviolet, and visible light bands. For example, the optical device OPD may be an optical sensor (such as a proximity sensor, an illuminance sensor, a camera sensor, or an image sensor) that senses light incident on the display device 10.

[0110] The optical device OPD may be disposed in the through-hole TH. The through-hole TH is a hole through which light can be transmitted, and may be a physical hole passing through the bottom cover PB of the panel, the display panel 100, and the polarizing film PF. However, the present disclosure is not limited thereto, and the through-hole TH may pass through the bottom cover PB of the panel, but may not pass through the display panel 100 and the polarizing film PF. The cover window CW may be provided to cover the through-hole TH.

[0111] Refer to Figure 4 , the circuit board 300 may be bent under the display panel 100. The circuit board 300 may be attached to the lower surface of the bottom cover PB of the panel using an adhesive member 310. The adhesive member 310 may be a pressure-sensitive adhesive.

[0112] Figure 5 is a cross-sectional view showing an example of a display area of a display device according to an embodiment.

[0113] Refer to Figure 5 , the display panel 100 according to an embodiment may be a light-emitting display panel including light-emitting elements ED each including a light-emitting layer EL. Figure 5 The common electrode CE in

[0114] The display device 10 may include a plurality of emission regions EA1, EA2, and EA3 provided in the display area DA (see Figure 6, which may also be collectively referred to as the "emission area EA"). The emission areas EA1, EA2, and EA3 may include a first emission area EA1, a second emission area EA2, and a third emission area EA3 that emit light of different colors. The first to third emission areas EA1, EA2, and EA3 may be respectively configured to emit red light, green light, or blue light, and the colors of the light emitted from the corresponding emission areas EA1, EA2, and EA3 may be different from each other according to the type (kind) of the light-emitting element ED to be described later. As an example, the first emission area EA1 may be configured to emit first light as red light, the second emission area EA2 may be configured to emit second light as green light, and the third emission area EA3 may be configured to emit third light as blue light. However, the present disclosure is not limited thereto.

[0115] The first to third emission areas EA1, EA2, and EA3 may be respectively defined by openings defined by a pixel defining film PDL to be described later.

[0116] In the display device 10, the first emission area EA1, the second emission area EA2, and the third emission area EA3 arranged adjacent to each other may form a pixel group. A pixel group may include emission areas EA1, EA2, and EA3 configured to emit light of different colors to express white grayscale. However, the present disclosure is not limited thereto, and the combination of the emission areas EA1, EA2, and EA3 constituting a pixel group may be differently modified according to the arrangement of the emission areas EA1, EA2, and EA3 and / or the colors of the light emitted from the emission areas EA1, EA2, and EA3, etc.

[0117] Referring to Figure 5 , the display panel 100 may include a substrate SUB, a thin film transistor layer TFTL, a light-emitting element layer EML, a thin film encapsulation layer ENC, and a touch sensor layer SENL.

[0118] The substrate SUB has been described above, and thus its description will not be provided.

[0119] The thin film transistor layer TFTL may include a first buffer layer BF1, a thin film transistor TFT, a gate insulating layer GI, a first interlayer insulating layer ILD1, a capacitor electrode CPE, a second interlayer insulating layer ILD2, a first connection electrode CNE1, a first passivation layer PAS1, a second connection electrode CNE2, and a second passivation layer PAS2.

[0120] The first buffer layer BF1 may be disposed on the substrate SUB. The first buffer layer BF1 may include an inorganic film capable of preventing or reducing the penetration of air or moisture. For example, the first buffer layer BF1 may include a plurality of inorganic films stacked alternately.

[0121] The thin film transistor TFT can be disposed on the first buffer layer BF1 and can constitute the pixel circuit of each of the plurality of pixels. For example, the thin film transistor TFT can be a driving transistor or a switching transistor of the pixel circuit. The thin film transistor TFT can include a semiconductor layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0122] The semiconductor layer ACT can be disposed on the first buffer layer BF1. The semiconductor layer ACT can be stacked with the gate electrode GE in the thickness direction (e.g., in a plan view) and can be insulated from the gate electrode GE through a gate insulating layer GI. The material of the semiconductor layer ACT in a part of the semiconductor layer ACT can become a conductor to form the source electrode SE and the drain electrode DE.

[0123] The gate electrode GE can be disposed on the gate insulating layer GI. The gate electrode GE can be stacked with the semiconductor layer ACT, and the gate insulating layer GI is disposed between the gate electrode GE and the semiconductor layer ACT.

[0124] The gate insulating layer GI can be disposed on the semiconductor layer ACT. For example, the gate insulating layer GI can cover the first buffer layer BF1 and the semiconductor layer ACT and can insulate the semiconductor layer ACT and the gate electrode GE from each other. The gate insulating layer GI can include a contact hole through which a first connection electrode CNE1 passes.

[0125] The first interlayer insulating layer ILD1 can cover the gate electrode GE and the gate insulating layer GI. The first interlayer insulating layer ILD1 can include a contact hole through which a first connection electrode CNE1 passes. The contact hole of the first interlayer insulating layer ILD1 can be connected to the contact hole of the gate insulating layer GI and the contact hole of the second interlayer insulating layer ILD2.

[0126] The capacitor electrode CPE can be disposed on the first interlayer insulating layer ILD1. In an embodiment, the capacitor electrode CPE can all include a plurality of capacitor electrodes. The first capacitor electrode CPE1 can be disposed on the gate insulating layer GI, and the second capacitor electrode CPE2 can be disposed on the first interlayer insulating layer ILD1 and can be stacked with the first capacitor electrode CPE1 in the thickness direction. In another embodiment, the capacitor electrode CPE is stacked with the gate electrode GE in the thickness direction such that the capacitor electrode CPE and the gate electrode GE can form a capacitor.

[0127] The second interlayer insulating layer ILD2 can cover the capacitor electrode CPE and the first interlayer insulating layer ILD1. The second interlayer insulating layer ILD2 can include a contact hole through which a first connection electrode CNE1 passes. The contact hole of the second interlayer insulating layer ILD2 can be connected to the contact hole of the first interlayer insulating layer ILD1 and the contact hole of the gate insulating layer GI.

[0128] The first connection electrode CNE1 can be disposed on the second interlayer insulating layer ILD2. The first connection electrode CNE1 can electrically connect the drain electrode DE of the thin film transistor TFT and the second connection electrode CNE2 to each other. The first connection electrode CNE1 can be inserted into contact holes formed in the second interlayer insulating layer ILD2, the first interlayer insulating layer ILD1, and the gate insulating layer GI to contact the drain electrode DE of the thin film transistor TFT. The first connection electrode CNE1 can be formed as a single layer or a multi-layer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or their alloys.

[0129] The first passivation layer PAS1 can cover the first connection electrode CNE1 and the second interlayer insulating layer ILD2. The first passivation layer PAS1 can protect the thin film transistor TFT. The first passivation layer PAS1 can include contact holes through which the second connection electrode CNE2 passes.

[0130] The second connection electrode CNE2 can be disposed on the first passivation layer PAS1. The second connection electrode CNE2 can electrically connect the first connection electrode CNE1 and the pixel electrode AE of the light emitting element ED to each other. The second connection electrode CNE2 can be inserted into contact holes formed in the first passivation layer PAS1 to contact the first connection electrode CNE1.

[0131] The second passivation layer PAS2 can cover the second connection electrode CNE2 and the first passivation layer PAS1. The second passivation layer PAS2 can include contact holes through which the pixel electrode AE of the light emitting element ED passes.

[0132] The light emitting element layer EML can be disposed on the thin film transistor layer TFTL. Refer to Figure 5 and the light emitting element layer EML can include a light emitting element ED and a pixel defining film PDL.

[0133] The light emitting element ED can be disposed on the second passivation layer PAS2. The light emitting element ED can include a pixel electrode AE, a light emitting layer EL, and a common electrode CE. Holes from the pixel electrode AE and electrons from the common electrode CE can recombine with each other in the light emitting layer EL to emit light.

[0134] The pixel electrodes AE can be respectively disposed in a plurality of emission regions EA. The pixel electrodes AE can include a first pixel electrode disposed in the first emission region EA1, a second pixel electrode disposed in the second emission region EA2, and a third pixel electrode disposed in the third emission region EA3. The pixel electrodes AE can be disposed to be spaced apart from each other on the second passivation layer PAS2. The pixel electrodes AE can be respectively disposed in different emission regions EA1, EA2, and EA3.

[0135] The pixel electrode AE can be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2. In an embodiment, the pixel electrode AE can have a stacked film structure in which a layer made of a material with a high work function (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In2O3)) and a layer made of a reflective material (such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture of one or more of them) are stacked. The layer made of a material with a high work function can be disposed at a layer above the layer made of a reflective material so as to be disposed close to the light emitting layer EL. As an example, the pixel electrode AE can have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO, but is not limited thereto.

[0136] The pixel defining film PDL can be located on the second passivation layer PAS2 and the pixel electrode AE, but at least a part of the pixel electrode AE can be exposed. The pixel defining film PDL can define emission regions EA1, EA2, and EA3. The pixel defining film PDL can cover the edge of the pixel electrode AE.

[0137] The pixel defining film PDL can include an organic insulating material or an inorganic insulating material. As an example, the pixel defining film PDL can be an organic film made of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and / or a polyimide resin, etc. As another example, the pixel defining film PDL can include one or more inorganic insulating materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0138] In an embodiment, the spacer 191 can be disposed on the pixel defining film PDL. The spacer 191 can be used to support a mask during the process of manufacturing the light emitting layer EL. The spacer 191 can be formed as an organic film made of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and / or a polyimide resin, etc.

[0139] The light emitting layer EL is formed on the pixel electrode AE. The light emitting layer EL can include an organic material to emit light of a set or predetermined color. For example, the light emitting layer EL can include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer can include a host and a dopant. The organic material layer can include a material that emits set or predetermined light, and can be formed using a phosphorescent material or a fluorescent material.

[0140] A common electrode CE is formed on the light-emitting layer EL. The common electrode CE can be formed to cover the light-emitting layer EL. According to an embodiment, as Figure 5 shown, the common electrode CE can be a common layer commonly formed in the emission region EA.

[0141] The common electrode CE can include a transparent conductive material to emit the light generated from the light-emitting layer EL. As an example, the common electrode CE can include silver (Ag), but is not limited thereto. The common electrode CE can include a layer made of a material having a small work function (such as Li, Ca, LiF, Al, Mg, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF, Ba, one or more compounds or mixtures thereof (e.g., a mixture of Ag and Mg, etc.) or a material having a multilayer structure such as LiF / Ca or LiF / Al). The common electrode CE can further include a transparent metal oxide layer disposed on the layer made of a material having a small work function.

[0142] A cover layer can be disposed on the common electrode CE. The cover layer can include an inorganic insulating material and cover the light-emitting element ED. The cover layer can prevent or reduce damage to the light-emitting element ED by external air. In an embodiment, the cover layer can include alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0143] The thin film encapsulation layer ENC can cover the light-emitting element layer EML. The thin film encapsulation layer ENC can completely cover the common electrode CE.

[0144] The thin film encapsulation layer ENC can include at least one inorganic film to prevent or reduce the penetration of oxygen or moisture into the light-emitting element layer EML. The thin film encapsulation layer ENC can include at least one organic film to protect the light-emitting element layer EML from foreign matters such as dust. In an embodiment, the thin film encapsulation layer ENC can include a lower inorganic encapsulation film TFE1, an organic encapsulation film TFE2, and an upper inorganic encapsulation film TFE3 stacked in sequence. The lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3 can be inorganic encapsulation layers, and the organic encapsulation film TFE2 disposed between the lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3 can be an organic encapsulation layer.

[0145] Each of the lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3 can include one or more inorganic insulating materials. The inorganic insulating materials can include alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0146] The organic encapsulation film TFE2 may include polymeric materials. The polymeric materials may include acrylic resins, epoxy resins, polyimides, and / or polyethylene, etc. For example, the organic encapsulation film TFE2 may include acrylic resins (such as polymethyl methacrylate or polyacrylic acid). The organic encapsulation film TFE2 may be formed by curing monomers or applying polymers.

[0147] The touch sensor layer SENL may be disposed on the thin film encapsulation layer ENC. The touch sensor layer SENL may include a touch buffer layer TBF, a touch insulation layer TIL, a touch electrode TE, and a touch protection layer TPR.

[0148] The touch buffer layer TBF may be disposed on the thin film encapsulation layer ENC. The touch buffer layer TBF may have insulation and optical functions. The touch buffer layer TBF may include at least one inorganic film. Optionally, the touch buffer layer TBF may not be provided. In some embodiments, a connection electrode BE1 for electrically connecting the touch electrodes TE to each other may be disposed on the touch buffer layer TBF. The connection electrode BE1 may be formed as a single layer made of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), or indium tin oxide (ITO), or as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0149] The touch insulation layer TIL may cover the touch buffer layer TBF. The touch insulation layer TIL may have an insulation function. For example, the touch insulation layer TIL may be an inorganic film including at least one of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0150] Some of the touch electrodes TE may be disposed on the touch insulation layer TIL. Each of the touch electrodes TE may not be stacked with the first emission region to the third emission region EA1, EA2, and EA3. Each of the touch electrodes TE may be formed as a single layer made of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), or indium tin oxide (ITO), or as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy (e.g., an Ag alloy or an Ag-Pd-Cu alloy), and a stacked structure of an APC alloy and ITO (ITO / APC / ITO).

[0151] The touch protection layer TPR may cover the touch electrodes TE and the touch insulation layer TIL. The touch protection layer TPR may have insulation and optical functions. The touch protection layer TPR may be made of the materials included in the touch insulation layer TIL.

[0152] A light blocking layer may be disposed on the touch sensor layer SENL. The light blocking layer may be disposed to overlap with the pixel defining film PDL. The light blocking layer may include a light absorbing material. For example, the light blocking layer may include an inorganic black pigment or an organic black pigment. The inorganic black pigment may be carbon black, and the organic black pigment may include at least one of lactam black, perylene black, and aniline black, but the present disclosure is not limited thereto. The light blocking layer may prevent or reduce color mixing caused by the transmission of visible light between the first emission region to the third emission region EA1, EA2, and EA3, so as to improve the color gamut of the display device 10.

[0153] In an embodiment, a color filter layer may be disposed on each of the touch protection layer TPR and the light blocking layer to overlap with the emission regions EA1, EA2, and EA3.

[0154] The color filter layer may include a first color filter, a second color filter, and a third color filter that are respectively disposed to correspond to different emission regions EA1, EA2, and EA3. The plurality of color filters may include colorants (such as dyes or pigments) configured to absorb light in bands other than a specific band of light, and may be disposed to correspond to the colors of light emitted from the emission regions EA1, EA2, and EA3. For example, the first color filter may be a red color filter disposed to overlap with the first emission region EA1 and configured to transmit only the first light that is red light. The second color filter may be a green color filter disposed to overlap with the second emission region EA2 and configured to transmit only the second light that is green light, and the third color filter may be a blue color filter disposed to overlap with the third emission region EA3 and configured to transmit only the third light that is blue light.

[0155] An organic planarization layer ORL may be disposed on the touch sensor layer SENL. The organic planarization layer ORL may planarize the steps therebelow to facilitate the attachment of the polarizing film PF thereon, and prevent or reduce the reflection of external light caused by the polarizing film PF from being viewed by the user.

[0156] The organic planarization layer ORL may include an outer coating. The outer coating may be made of an organic material and may include, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, and / or polyimide resin, etc.

[0157] Figure 6 is an enlarged view of an edge region of the display device. Figure 6 is Figure 2 an enlarged plan view of region A1 in Figure 7 is a cross-sectional view showing an example of the display device taken along line II-II' of Figure 6 Figure 8 is Figure 7 ​An enlarged cross-sectional view of region A3 in

[0158] Referring to Figures 6 to 8 , the light-emitting element ED can be disposed in the emission regions EA1, EA2, and EA3 of the display region DA, and the first non-display region NDA1 can be disposed around the display region DA. The display region DA can be defined to include the light-emitting element layer EML including the light-emitting element ED and the pixel defining film PDL. The first non-display region NDA1 can be formed to surround the edge of the display region DA. The first dam DAM1 can be disposed in the first non-display region NDA1, and the crack dam CRD can be disposed outside the first dam DAM1.

[0159] The thin film encapsulation layer ENC can be stacked with the light-emitting element layer EML and the first dam DAM1 in the thickness direction of the substrate SUB (e.g., in a plan view or in the Z-axis direction). In some embodiments, in addition to the light-emitting element layer EML and the first dam DAM1, the thin film encapsulation layer ENC can also be stacked with the crack dam CRD.

[0160] The first dam DAM1 can be formed to prevent or reduce the overflow of the organic material in the display region DA into the first non-display region NDA1. As an example, in the first non-display region NDA1, the organic encapsulation film TFE2 does not flow into the first non-display region NDA1 through the first dam DAM1.

[0161] The first dam DAM1 can be positioned to be stacked with the first non-display region NDA1 and surround the display region DA. The first dam DAM1 can be disposed between the lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3.

[0162] The first side surface DAM1_S1 of the first dam DAM1 can be stacked with the organic encapsulation film TFE2 in the thickness direction of the substrate SUB. The first side surface DAM1_S1 of the first dam DAM1 can be in contact with the organic encapsulation film TFE2. The first side surface DAM1_S1 of the first dam DAM1 can be the side surface facing the display region DA.

[0163] The second side surface DAM1_S2 of the first dam DAM1 may be in contact with the upper inorganic encapsulation film TFE3. The second side surface DAM1_S2 of the first dam DAM1 may not overlap with the organic encapsulation film TFE2 in the thickness direction of the substrate SUB. The second side surface DAM1_S2 of the first dam DAM1 may not be in contact with the organic encapsulation film TFE2. The second side surface DAM1_S2 of the first dam DAM1 is a side surface different from the first side surface DAM1_S1 and may be a surface opposite to the first side surface DAM1_S1. The organic encapsulation film TFE2 may be surrounded by the first side surface DAM1_S1 of the first dam DAM1 and may not flow onto the second side surface DAM1_S2 of the first dam DAM1.

[0164] The first side surface DAM1_S1 and the second side surface DAM1_S2 of the first dam DAM1 may overlap with the lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3 in the thickness direction of the substrate SUB. The first side surface DAM1_S1 and the second side surface DAM1_S2 of the first dam DAM1 may include not only surfaces perpendicular to the substrate SUB but also surfaces inclined or curved with respect to the substrate SUB. The lower surface of the first dam DAM1 may be in contact with the lower inorganic encapsulation film TFE1.

[0165] The first dam DAM1 may include polysiloxane. Polysiloxane is an organic material and may have excellent or suitable adhesion to the organic encapsulation film TFE2 to prevent or reduce the overflow of the organic encapsulation film TFE2 from the first dam DAM1.

[0166] In an embodiment, the glass transition temperature (Tg) of the first dam DAM1 may be from about -180 °C to about -50 °C. In another embodiment, the glass transition temperature (Tg) of the first dam DAM1 may be from about -130 °C to about -100 °C. The glass transition temperature (Tg) can be measured using a thermomechanical analyzer (TMA Q400 available from TA Instruments) in the temperature range of about 50 °C to about 400 °C at a fixed tension of about 0.05 N and a heating rate of about 5 °C / min or can be measured according to ASTM D7028.

[0167] In an embodiment, the density of the first dam DAM1 may be from about 0.05 g / mL to about 5 g / mL. In another embodiment, the density of the first dam DAM1 may be from about 0.05 g / mL to about 2.5 g / mL. The density can be measured according to ASTM D792.

[0168] In an embodiment, the Young's modulus of the first dam DAM1 may be from about 0.01 MPa to about 1.0 Mpa. In another embodiment, the Young's modulus of the first dam DAM1 may be from about 0.01 Mpa to about 0.06 Mpa. The Young's modulus is a value in the strain range of about 0 to about 5% on the s-s curve, and the s-s curve is measured by applying a force to a sample of about 4 mm to about 6 mm (L) × about 5.3 mm (W) × about 0.06 mm (T) at an isothermal temperature of about 25 °C using a dynamic mechanical analyzer (DMA) while increasing the force by about 1 N per minute to reach about 18 N.

[0169] The first dam DAM1 may be a single layer. The composition of the first dam DAM1 in the region adjacent to the substrate SUB and the composition of the first dam DAM1 in the region adjacent to the upper inorganic encapsulation film TFE3 may be the same as each other. The first dam DAM1 may be stacked with the light-emitting element ED and the organic encapsulation film TFE2 in the horizontal direction of the substrate SUB (e.g., the first direction or the X-axis direction).

[0170] The polysiloxane of the first dam DAM1 may be an oligomer or a polymer, and the oligomer or polymer is a combination of a silicon-vinyl compound and a silicon-hydride compound.

[0171] The silicon-vinyl compound may be a compound represented by Formula 2. The silicon-hydride compound may be a compound represented by Formula 3. The polysiloxane as a combination of the silicon-vinyl compound and the silicon-hydride compound may be a compound represented by Formula 1.

[0172] Formula 1

[0173]

[0174] Formula 2

[0175]

[0176] Formula 3

[0177]

[0178] Here, a is an integer from 1 to 3,

[0179] m is an integer of 1 or greater,

[0180] R1 is a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or is represented by Formula S1,

[0181] Formula S1

[0182] ,

[0183] n is an integer of 1 or greater,

[0184] R2 to R4 may each independently be the same as or different from one another, and may each independently be a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkenyl group, or an oxygen atom, and may optionally be linked to adjacent substituents to form a substituted or unsubstituted ring, and

[0185] The substituents in “substituted or unsubstituted” are one or more substituents selected from the group consisting of a deuterium atom, a halogen atom, a cyano group, a nitro group, an amino group (amine group), a silyl group, an oxy group, a thio group, a sulfinyl group, a sulfonyl group, a carbonyl group, a boron group, a phosphinyl oxide group, a phosphinyl sulfide group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a hydrocarbon ring group, an aryl group, and a heterocyclic group, and / or substituents in which two or more groups selected from the said group are linked to each other.

[0186] The alkyl group may have 1 to 30 carbon atoms, the alkenyl group may have 2 to 30 carbon atoms, the aryl group may have 6 to 60 carbon atoms, and the heterocyclic group may have 2 to 60 carbon atoms.

[0187] In Formula S1, is linked to the position of Formula 1 or Formula 2.

[0188] Multiple R1s may be the same as or different from one another. Multiple R2s may be the same as or different from one another. Multiple R3s may be the same as or different from one another. Multiple R4s may be the same as or different from one another. Multiple as may be the same as or different from one another.

[0189] The silicon-vinyl compounds may include a linear form and a bulky form. In an embodiment, the silicon-vinyl compound may include a linear compound represented by Formula 2 and a bulky compound represented by Formula 2. In an embodiment, the content (e.g., amount) of the bulky compound represented by Formula 2 may be greater than the content (e.g., amount) of the linear compound represented by Formula 2.

[0190] The linear compound among the silicon-vinyl compounds of Formula 2 may be the following compound. However, the present disclosure is not limited thereto.

[0191]

[0192] In the above formulae, n1, n2, n3, and n4 are integers of 1 or greater.

[0193] The bulky compound among the silicon-vinyl compounds of Formula 2 may be the following compound. However, the present disclosure is not limited thereto.

[0194]

[0195] In an embodiment, the content (e.g., amount) of the silicon - hydride compound of Formula 3 can be less than the content (e.g., amount) of the silicon - vinyl compound of Formula 2.

[0196] The silicon - hydride compound of Formula 3 can be the following compounds. However, the present disclosure is not limited thereto.

[0197]

[0198] In the above formulas, m1 and m2 are integers of 1 or greater.

[0199] The silicon - vinyl compound and the silicon - hydride compound can combine with each other under a platinum catalyst to produce a polysiloxane of Formula 1 below.

[0200]

[0201] The first dam DAM1 can include one or more compounds of Formulas 1 to 3. Except for the compound that cures to the polysiloxane of Formula 3, a trace amount of the unreacted compound of Formula 2 or Formula 3 may remain.

[0202] Figure 9 is an enlarged plan view of an edge region of a display device according to another embodiment. Specifically, except for the groove GR1, Figure 9 the shown region A1_1 corresponds to Figure 6 region A1. Figure 10 is a cross - sectional view of a display panel according to Figure 9 Specifically, except for the groove GR1, Figure 10 the shown region A3_1 corresponds to Figure 8 region A3.

[0203] Referring to Figure 9 and Figure 10 the display device 10 may further include a groove GR1 located inside the first dam DAM1 in the first non - display area NDA1. The groove GR1 can prevent or reduce the overflow of the organic encapsulation film TFE2. The groove GR1 can overlap with the first non - display area NDA1 and can be located between the light - emitting element ED and the first dam DAM1. The groove GR1 can have a shape in which a part of the thin - film transistor layer TFTL is removed. The lower inorganic encapsulation film TFE1 can cover the outer surface of the groove GR1.

[0204] The crack dam CRD can be disposed outside the first dam DAM1. The crack dam CRD can be disposed close to the edge EG of the display panel 100. The crack dam CRD can be a structure for preventing or reducing the crack propagation of the inorganic film of the thin film encapsulation layer ENC in the process of cutting the substrate SUB in the process of manufacturing the display device 10. The crack dam CRD can be disposed along the left edge, upper edge, and right edge of the display panel 100. The crack dam CRD can not be disposed at the lower edge of the display panel 100. The crack dam CRD can be the outermost structure disposed at the outermost sides of the left side, upper side, and right side of the display panel 100.

[0205] In an embodiment, the display panel 100 can include a through hole TH therein.

[0206] Figure 11 It is an enlarged view of the through hole area of the display panel. Figure 11 is Figure 2 an enlarged plan view of the area A2 in Figure 12 is a cross-sectional view showing an example of the display device taken along the Figure 11 line III-III'. Figure 13 is Figure 12 an enlarged cross-sectional view of the area A4 in

[0207] Referring to Figures 11 to 13 , the second non-display area NDA2 can be disposed to surround the through hole TH and be located between the through hole TH and the display area DA.

[0208] The through hole TH can pass through the substrate SUB, thin film transistor layer TFTL, light emitting element layer EML, thin film encapsulation layer ENC, touch sensor layer SENL, and organic planarization layer ORL and polarizing film PF included in the display panel 100. The through hole TH can be formed by a laser processing technique. The through hole TH can be covered by a cover window CW, and an optical device OPD can be disposed inside the through hole TH.

[0209] A plurality of light emitting elements ED are disposed in the display area DA, but not in the second non-display area NDA2. The second non-display area NDA2 can include a first hole dam HDAM1.

[0210] The first hole dam HDAM1 can be formed to prevent or reduce the overflow of the organic material in the display area DA into the second non-display area NDA2. As an example, in the second non-display area NDA2, the organic encapsulation film TFE2 can not flow into the second non-display area NDA2 through the first hole dam HDAM1.

[0211] The first hole dam HDAM1 can be positioned to overlap with the second non-display area NDA2 and surround the display area DA. The first hole dam HDAM1 can be disposed between the lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3.

[0212] The first side surface HDAM1_S1 of the first hole dam HDAM1 can overlap with the organic encapsulation film TFE2 in the thickness direction of the substrate SUB. The first side surface HDAM1_S1 of the first hole dam HDAM1 can be in contact with the organic encapsulation film TFE2. The first side surface HDAM1_S1 of the first hole dam HDAM1 can be the side surface facing the display area DA.

[0213] The second side surface HDAM1_S2 of the first hole dam HDAM1 can be in contact with the upper inorganic encapsulation film TFE3. The second side surface HDAM1_S2 of the first hole dam HDAM1 can not overlap with the organic encapsulation film TFE2 in the thickness direction of the substrate SUB. The second side surface HDAM1_S2 of the first hole dam HDAM1 can not be in contact with the organic encapsulation film TFE2. The second side surface HDAM1_S2 of the first hole dam HDAM1 is a side surface different from the first side surface HDAM1_S1, and can be the surface opposite to the first side surface HDAM1_S1. The organic encapsulation film TFE2 can be surrounded by (or blocked by) the first side surface HDAM1_S1 of the first hole dam HDAM1, and can not flow onto the second side surface HDAM1_S2 of the first hole dam HDAM1.

[0214] The first side surface HDAM1_S1 and the second side surface HDAM1_S2 of the first hole dam HDAM1 can overlap with the lower inorganic encapsulation film TFE1 and the upper inorganic encapsulation film TFE3 in the thickness direction of the substrate SUB. The first side surface HDAM1_S1 and the second side surface HDAM1_S2 of the first hole dam HDAM1 can include not only the surface perpendicular to the substrate SUB but also the surface inclined or curved with respect to the substrate SUB. The lower surface of the first hole dam HDAM1 can be in contact with the lower inorganic encapsulation film TFE1.

[0215] The first hole dam HDAM1 can include polysiloxane. Polysiloxane is an organic material, and can have excellent or suitable adhesion to the organic encapsulation film TFE2 to prevent or reduce the overflow of the organic encapsulation film TFE2 from the first hole dam HDAM1.

[0216] The first hole dam HDAM1 can include the same material as the first dam DAM1 in the first non-display area NDA1. The description of the first dam DAM1 can equally apply to the material or physical properties of the first hole dam HDAM1.

[0217] The first hole dam HDAM1 may be a single layer. The components of the first hole dam HDAM1 in the region adjacent to the substrate SUB and the components of the first hole dam HDAM1 in the region adjacent to the upper inorganic encapsulation film TFE3 may be the same as each other. The first hole dam HDAM1 may be stacked with the light-emitting element ED and the organic encapsulation film TFE2 in the horizontal direction (e.g., the first direction or the X-axis direction) of the substrate SUB.

[0218] Figure 14 is an enlarged plan view of a through-hole region of a display device according to another embodiment. Specifically, in addition to the hole groove HGR1, Figure 14 the shown region A2_1 corresponds to Figure 11 region A2. Figure 15 is according to Figure 14 a cross-sectional view of a display panel, specifically, in addition to the hole groove HGR1, Figure 15 the shown region A4_1 corresponds to Figure 13 region A4.

[0219] Referring to Figure 14 and Figure 15 the display device 10 may further include a hole groove HGR1 located inside the first hole dam HDAM1 in the second non-display region NDA2. The hole groove HGR1 may prevent or reduce the overflow of the organic encapsulation film TFE2. The hole groove HGR1 may be stacked with the second non-display region NDA2 and may be located between the light-emitting element ED and the first hole dam HDAM1. The hole groove HGR1 may have a shape in which a part of the thin-film transistor layer TFTL is removed. The lower inorganic encapsulation film TFE1 may cover the outer surface of the hole groove HGR1.

[0220] The substrate SUB may include an inclined surface in a part stacked with the first non-display region NDA1 and the second non-display region NDA2. The inclined surface of the substrate SUB in the first non-display region NDA1 is a surface formed by a laser processing technique for cutting the edge EG of the display panel 100 and may be an inclined surface in the direction toward the edge EG. The inclined surface of the substrate SUB in the second non-display region NDA2 is a surface formed by a laser processing technique for forming the through-hole TH and may be an inclined surface in the direction toward the through-hole TH.

[0221] Hereinafter, a process for manufacturing the display device 10 according to an embodiment will be described with reference to other drawings.

[0222] Figure 16 is a flowchart showing a process for manufacturing the display device 10 according to an embodiment, and Figures 17 to 25is a cross-sectional view or a plan view schematically showing a process for manufacturing a display device according to an embodiment. Hereinafter, formation of the first dam DAM1 and the organic encapsulation film TFE2 in the first non-display area NDA1 will be mainly described, and descriptions of other layers and areas will not be provided.

[0223] Referring to Figure 17 , a substrate SUB having a light-emitting element ED and an inorganic encapsulation film TFE1 formed thereon in a display area DA is prepared. A light-emitting element ED is formed in the display area DA of the substrate SUB (step S10), and then the inorganic encapsulation film TFE1 is deposited not only in the display area DA but also in the non-display area NDA (step S20).

[0224] Next, referring to Figure 18 and Figure 19 , a dam composition DAMC is applied onto the inorganic encapsulation film TFE1 in the non-display area NDA (step S30). The non-display area NDA is an area provided around the display area DA and may include a first non-display area NDA1 and a second non-display area NDA2. When a groove GR1 exists in the first non-display area NDA1, the dam composition DAMC is applied outside the groove GR1. When a hole groove HGR1 exists in the second non-display area NDA2, the dam composition DAMC is applied outside the hole groove HGR1 (i.e., between the hole groove HGR1 and the through hole TH).

[0225] In the step of applying the dam composition DAMC, an ejection dispenser may be used. The dam composition DAMC may have a much higher viscosity than the organic encapsulation composition to be described later. The dam composition DAMC may have a high viscosity, so that even after being discharged using an ejection dispenser, the dam composition DAMC remains in its discharged form without spreading.

[0226] In an embodiment, the dam composition DAMC may include a silicon-vinyl compound represented by the above formula 2 and a silicon-hydride compound represented by the above formula 3. The silicon-vinyl compound may include a linear form and a bulky form. The content (e.g., amount) of the bulky silicon-vinyl compound may be greater than the content (e.g., amount) of the linear silicon-vinyl compound. The content (e.g., amount) of the silicon-hydride compound may be less than the content (e.g., amount) of the silicon-vinyl compound.

[0227] In an embodiment, the dam composition DAMC may further include a solvent, a catalyst, and an additive. The dam composition DAMC may include a platinum (Pt) catalyst.

[0228] In an embodiment, based on the total weight of the dam composition, the dam composition DAMC may include about 5 wt% to about 25 wt% of a linear silicon-vinyl compound, about 30 wt% to about 80 wt% of a bulky silicon-vinyl compound, and about 0.5 wt% to about 20 wt% of a silicon-hydride compound.

[0229] Next, referring to Figures 20 to 22 , the organic encapsulation composition TFE2C is applied to the underlying inorganic encapsulation film TFE1 (step S40). The organic encapsulation composition TFE2C is applied to the non-display area NDA and the display area DA inside the applied dam composition DAMC. The organic encapsulation composition TFE2C is not applied beyond the dam composition DAMC.

[0230] In an embodiment, in the step of applying the organic encapsulation composition TFE2C, an inkjet printer may be used. The viscosity of the organic encapsulation composition TFE2C may be much lower than the viscosity of the dam composition DAMC. The organic encapsulation composition TFE2C may be inkjet ejected from an inkjet head IH and then spread.

[0231] Next, referring to Figure 23 , the organic encapsulation composition TFE2C is cured to form the organic encapsulation film TFE2 (step S50). In an embodiment, the organic encapsulation composition TFE2C may be cured by light.

[0232] Next, referring to Figure 24 , the dam composition DAMC may be cured to form the first dam DAM1 (step S60). The silicon-vinyl compound and the silicon-hydride compound included in the dam composition DAMC may combine with each other to form a polysiloxane. In an embodiment, the dam composition DAMC may be cured by heat.

[0233] Next, referring to Figure 25 , the upper inorganic encapsulation film TFE3 is deposited on the first dam DAM1 and the organic encapsulation film TFE2 (step S70). In an embodiment, the upper inorganic encapsulation film TFE3 may be formed by chemical vapor deposition (CVD).

[0234] In the present disclosure, unless the context clearly indicates otherwise, singular expressions may include plural expressions. It will also be understood that when the terms "comprise", "include" or "have" are used in the present disclosure, it indicates the presence of the stated features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or groups thereof. The " / " used herein may be interpreted as "and" or "or" depending on the context.

[0235] Throughout this disclosure, when an element such as a layer, film, region, or plate is referred to as being "on" another element, it will be understood that the element can be directly on the other element, or intervening elements may be present between the element and the other element. In some embodiments, "directly on" may mean that no additional layers, films, regions, plates, etc. are present between a layer, film, region, plate, etc. and another portion. For example, "directly on" may mean that two layers or two elements are disposed without using additional members (such as an adhesive member) therebetween.

[0236] In this disclosure, although the terms "first", "second", etc. may be used herein to describe one or more elements, components, regions, and / or layers, these elements, components, regions, and / or layers should not be limited by these terms. These terms are only used to distinguish one component from another.

[0237] As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are also intended to include the plural forms. Additionally, the use of "may" in describing embodiments of this disclosure refers to "one or more embodiments of this disclosure".

[0238] In this disclosure, when a particle (e.g., a nanoparticle) is spherical, "size" represents the particle diameter or average particle diameter, and when the particle is non-spherical, "size" represents the major axis length or average major axis length. The diameter (or size) of the particle can be measured using a scanning electron microscope or a particle size analyzer. For example, a HORIBA, LA-950 laser particle size analyzer can be used as the particle size analyzer. When measuring the size of a particle using a particle size analyzer, the average particle diameter (or size) is referred to as D50. D50 refers to the average diameter (or size) of the particle corresponding to 50 volume % of its cumulative volume in a particle size distribution (e.g., a cumulative distribution), and refers to the particle size value corresponding to 50% when starting from the smallest particle in a distribution curve accumulated in order of smallest particle size to largest particle size when the total number of particles is 100%.

[0239] As used herein, the terms "substantially", "about", or similar terms are used as approximate terms and not as terms of degree, and are intended to account for the inherent deviations of measured or calculated values recognized by a person of ordinary skill in the art. As used herein, "about" includes the stated value and means within an acceptable deviation of the specific value as determined by a person of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0240] In the present disclosure, expressions such as "not including one or any 'component'", "excluding one or any 'component'", and / or "free of 'component'" mean that the "component" is not added, selected, or used as a component in a compound / composition, but may still include less than an appropriate amount of the "component" due to other impurities in the composition and / or external factors.

[0241] Any numerical range recited herein is intended to include all sub-ranges having the same numerical precision that are included within the recited range. For example, a range of "1.0 to 10.0" is intended to include all sub-ranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, i.e., having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, by way of example, 2.4 to 7.6. Any maximum numerical limit recited herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit recited in this specification is intended to include all higher numerical limits contained therein. Accordingly, the applicant reserves the right to amend this specification (including the claims) to expressly recite any sub-ranges that are included within the ranges expressly recited herein.

[0242] As used herein, the term "and / or" includes any combination and all combinations of one or more of the associated listed items. Throughout the disclosure, expressions such as "at least one of a, b, and c", "at least one of a - c", "at least one of a to c", "at least one of among a to c", etc. mean only a, only b, only c, (e.g., simultaneously) both a and b, (e.g., simultaneously) both a and c, (e.g., simultaneously) both b and c, all of a, b, and c, or variations thereof.

[0243] In this specification, "including A or B", "A and / or B", etc. mean A or B or both A and B.

[0244] A light-emitting device, a display device, an electronic device, an electronic apparatus, or any other related device or component according to embodiments of the present disclosure described herein can be implemented using any suitable hardware, firmware (e.g., an application specific integrated circuit), software, or a combination of software, firmware, and hardware. For example, various components of the device can be formed on one integrated circuit (IC) chip or on separate IC chips. Additionally, various components of the device can be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. Further, various components of the device can be processes or threads that run on one or more processors in one or more computing devices, execute computer program instructions, and interact with other system components to perform the various functions described herein. The computer program instructions are stored in a memory, which can be implemented in a computing device using standard memory devices (such as, for example, random access memory (RAM)). The computer program instructions can also be stored in other non-transitory computer-readable media (such as, for example, CD-ROMs, flash drives, etc.). Additionally, those skilled in the art will recognize that, without departing from the scope of the embodiments of the present disclosure, the functions of various computing devices can be combined or integrated into a single computing device, or the functions of a particular computing device can be distributed over one or more other computing devices.

[0245] In summarizing the detailed description, those skilled in the art will understand that many variations and modifications can be made to the preferred embodiments without substantially departing from the principles of the present disclosure. Accordingly, the disclosed preferred embodiments of the present disclosure are for general and descriptive purposes only and not for purposes of limitation.

Claims

1. A display device, characterized in that, The display device includes: a substrate including a display area and a first non-display area around the display area; a light-emitting element located on the substrate in the display area; a lower inorganic encapsulation film located on the substrate in the display area and the first non-display area; an organic encapsulation film located on the lower inorganic encapsulation film; an upper inorganic encapsulation film located on the organic encapsulation film; and a first dam located between the lower inorganic encapsulation film and the upper inorganic encapsulation film in the first non-display area, wherein a first side surface of the first dam contacts the organic encapsulation film, and a second side surface of the first dam, which is different from the first side surface of the first dam, contacts the upper inorganic encapsulation film.

2. The display device according to claim 1, wherein A lower surface of the first dam contacts the lower inorganic encapsulation film.

3. The display device according to claim 1, characterized in that, The first dam overlaps the light-emitting element and the organic encapsulation film in a direction parallel to the substrate.

4. The display device according to claim 1, characterized in that, The display device further includes a groove located between the light-emitting element and the first dam.

5. The display device according to claim 1, characterized in that, The substrate further includes a through hole and a second non-display area located between the through hole and the display area, The display device further includes a first hole dam located between the lower inorganic encapsulation film and the upper inorganic encapsulation film in the second non-display area, a first side surface of the first hole dam contacts the organic encapsulation film, and a second side surface of the first hole dam, which is different from the first side surface of the first hole dam, contacts the upper inorganic encapsulation film.

6. The display device according to claim 5, wherein The first hole dam overlaps the light-emitting element and the organic encapsulation film in a direction parallel to the substrate.

7. The display device according to claim 5, wherein The first hole dam includes the same material as the first dam.

8. The display device according to claim 5, characterized in that, The display device further includes a hole groove located between the light-emitting element and the first hole dam.

9. The display device according to claim 1, wherein Among them, the first side surface of the first dam overlaps the organic encapsulation film in a plan view, and the second side surface of the first dam, which is different from the first side surface of the first dam, does not overlap the organic encapsulation film in the thickness direction of the substrate.

10. The display device according to claim 9, wherein The first side surface and the second side surface of the first dam overlap the upper inorganic encapsulation film and the lower inorganic encapsulation film in the thickness direction of the substrate.

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