Micro light emitting diode display

Abstract

The utility model discloses a micro light-emitting diode display which comprises a substrate, a driving circuit layer, a plurality of blue micro light-emitting diodes, a plurality of positioning structures, a quantum dot layer and a color filter layer. The driving circuit layer is arranged on the substrate, and the driving circuit comprises a plurality of sub-pixel driving circuits. The blue micro-light-emitting diodes are arranged on the driving circuit layer, and each blue micro-light-emitting diode is connected with one of the sub-pixel driving circuits. The positioning structures are arranged on the driving circuit layer, and each positioning structure is arranged between two adjacent blue micro light emitting diodes. The quantum dot layer is located above the blue micro-light-emitting diode, the blue micro-light-emitting diode is configured to excite the quantum dot layer to emit light, and the color filter layer is located above the quantum dot layer. The circuit driving of the micro light-emitting diode display is more simplified, and the micro light-emitting diode display can be manufactured with less and huge transfer time.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor products, and particularly to a micro light-emitting diode display. Background Art

[0002] Micro light-emitting diode (micro LEDs) displays have attracted much attention because they can provide advantages such as high brightness, high contrast, low power consumption, and scalability. Although micro light-emitting diode displays have many advantages, the difficulty of the mass transfer technology and the complexity of the driving circuit design in the manufacturing process limit the application and popularity of micro light-emitting diode displays. The mass transfer technology is to transfer a large number of micro light-emitting diodes from the growth wafer to the display substrate. This process needs to ensure that each micro light-emitting diode is placed in the correct position and that the electrical connection of each micro light-emitting diode is normal, which consumes a lot of process time. Therefore, there is an urgent need for a new micro light-emitting diode display that can effectively reduce the time required for mass transfer and can use a more simplified circuit to drive. Summary of the Utility Model

[0003] The purpose of the utility model is to provide a micro light-emitting diode display, the circuit drive of which is more simplified, and the micro light-emitting diode display can be manufactured with less mass transfer time.

[0004] To achieve the above purpose, the utility model and its preferred embodiments adopt the following technical solutions, but the embodiments are not limited to the following solutions. A micro light-emitting diode display includes a substrate, a driving circuit layer, a plurality of blue micro light-emitting diodes, a plurality of positioning structures, a quantum dot layer, and a color filter layer. The driving circuit layer is located on the substrate and includes a plurality of sub-pixel driving circuits, and the sub-pixel driving circuits define a plurality of sub-pixel regions on the substrate. The blue micro light-emitting diodes are located on the driving circuit layer, and each blue micro light-emitting diode is connected to one of the sub-pixel driving circuits. The positioning structures are located on the driving circuit layer, and each positioning structure is located between two adjacent blue micro light-emitting diodes. The quantum dot layer is located above the blue micro light-emitting diodes, and the blue micro light-emitting diodes are configured to excite the quantum dot layer to emit light, and the color filter layer is located above the quantum dot layer.

[0005] In some embodiments, the plurality of positioning structures include a plurality of first-direction positioning structures, wherein the driving circuit layer defines a first direction and a second direction that are perpendicular to each other, the length direction of each first-direction positioning structure is substantially parallel to the first direction, and the first-direction positioning structure is located between two adjacent blue micro light-emitting diodes in the second direction.

[0006] In some embodiments, the plurality of positioning structures further includes a plurality of second-direction positioning structures. The length direction of each second-direction positioning structure is substantially parallel to the second direction, and the second-direction positioning structures are located between two adjacent ones of the blue micro light-emitting diodes in the first direction.

[0007] In some embodiments, the plurality of positioning structures are substantially made of materials that are not penetrable by visible light.

[0008] In some embodiments, the color filter layer includes a patterned light-shielding layer, and the plurality of positioning structures overlap with the patterned light-shielding layer in a direction perpendicular to the substrate.

[0009] In some embodiments, the height of each positioning structure is less than or substantially equal to the height of each blue micro light-emitting diode.

[0010] In some embodiments, a first protective layer is further included. The first protective layer covers the plurality of positioning structures and the plurality of blue micro light-emitting diodes, and the quantum dot layer is located on the first protective layer.

[0011] In some embodiments, a second protective layer is further included. The second protective layer is located between the quantum dot layer and the color filter layer.

[0012] In some embodiments, the height of each positioning structure is greater than the height of each blue micro light-emitting diode.

[0013] In some embodiments, an accommodation space is formed between the upper surface of each blue micro light-emitting diode and one side surface of each of the two adjacent positioning structures, and the quantum dot layer is located in the accommodation space.

[0014] In some embodiments, a first protective layer is further included. The protective layer covers the plurality of positioning structures, the plurality of blue micro light-emitting diodes, and the quantum dot layer.

[0015] In some embodiments, a second protective layer is further included. The second protective layer is located between the first protective layer and the color filter layer.

[0016] In some embodiments, the color filter layer includes a plurality of red filter layers, a plurality of green filter layers, and a plurality of blue filter layers, and each red filter layer, each green filter layer, and each blue filter layer respectively corresponds to one of the plurality of blue micro light-emitting diodes.

[0017] In some embodiments, the quantum dot layer includes a plurality of quantum dot blocks and a plurality of spacer blocks. The plurality of quantum dot blocks include a plurality of quantum dots, the plurality of spacer blocks do not include quantum dots, and the plurality of quantum dot blocks and the plurality of spacer blocks are substantially located in the same plane. And each quantum dot block overlaps with each red filter layer, each green filter layer, or each blue filter layer in a direction perpendicular to the substrate.

[0018] In some embodiments, the plurality of spaced-apart blocks are substantially made of a material that is not penetrable by visible light.

[0019] In some embodiments, it further includes a plurality of positioning structures located on the driving circuit layer, and the positioning structures are located between two adjacent blue micro light-emitting diodes, wherein each spaced-apart block overlaps with each positioning structure in the direction perpendicular to the substrate.

[0020] In some embodiments, the color filter layer further includes a plurality of yellow filter layers, a plurality of magenta filter layers, or a plurality of cyan filter layers, and each yellow filter layer, each magenta filter layer, or each cyan filter layer respectively corresponds to one of the plurality of blue micro light-emitting diodes.

[0021] In some embodiments, the quantum dot layer includes a plurality of red quantum dots, a plurality of green quantum dots, and a plurality of blue quantum dots.

[0022] In some embodiments, the bottom surface of the blue micro light-emitting diode has an asymmetric three-dimensional structure, and the upper surface of the driving circuit has a complementary structure that is substantially complementary to the three-dimensional structure, and the three-dimensional structure of the blue micro light-emitting diode is fitted into the complementary structure of the driving circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for the description of the embodiments. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0024] Figure 1 Shows a cross-sectional schematic diagram of a micro light-emitting diode display of certain embodiments.

[0025] Figure 2 Shows the emission light spectra of different quantum dots excited by blue light in the prior art.

[0026] Figure 3 Shows a top view schematic diagram of a micro light-emitting diode display of certain embodiments.

[0027] Figure 4 Shows a top view schematic diagram of a positioning structure of certain embodiments.

[0028] Figure 5 Shows a top view schematic diagram of a positioning structure of certain embodiments.

[0029] Figure 6 Shows a cross-sectional schematic diagram of a micro light-emitting diode display of certain embodiments.

[0030] Figure 7A cross-sectional schematic diagram of a micro light-emitting diode display according to some embodiments is shown.

[0031] Figure 8 A top view schematic diagram showing four sub-pixels of red (R), green (G), blue (B), and green (G) is shown.

[0032] Description of main reference numerals:

[0033] 10: First micro light-emitting diode display

[0034] 10a: Second micro light-emitting diode display

[0035] 10b: Third micro light-emitting diode display

[0036] 11: First spectrum

[0037] 12: Second spectrum

[0038] 13: Third spectrum

[0039] 14: Fourth spectrum

[0040] 15: Fifth spectrum

[0041] 16: Sixth spectrum

[0042] 102: Substrate

[0043] 110: Driving circuit layer

[0044] 112: Sub-pixel driving circuit

[0045] 114: Sub-pixel region

[0046] 115: Pixel region

[0047] 116: Connecting electrode

[0048] 120: Blue micro light-emitting diode

[0049] 120H: Height of the blue micro light-emitting diode

[0050] 120A: Upper surface

[0051] 121: First electrode

[0052] 122: Second electrode

[0053] 130: Quantum dot layer

[0054] 132: Quantum dot block

[0055] 134: Spacing block

[0056] 140: Color filter layer

[0057] 141: Patterned light-shielding layer

[0058] 142: Red color filter layer

[0059] 143: Green color filter layer

[0060] 144: Blue color filter layer

[0061] 145: Yellow color filter layer

[0062] 146: Magenta color filter layer

[0063] 147: Cyan color filter layer

[0064] 150: Alignment structure

[0065] 150H: Height of the alignment structure

[0066] 151: First-direction alignment structure

[0067] 152: Second-direction alignment structure

[0068] 155B: First side surface;

[0069] 156B: Second side surface;

[0070] 161: First protective layer

[0071] 162: Second protective layer

[0072] 163: Third protective layer

[0073] C: Accommodating space

[0074] D1: First direction

[0075] D2: Second direction

[0076] F: Direction perpendicular to the substrate

[0077] R: Red sub-pixel

[0078] G: Green sub-pixel

[0079] B: Blue sub-pixel Detailed implementation manners

[0080] Figure 1 A cross-sectional schematic diagram of the first micro light-emitting diode display 10 in some embodiments of the present invention is shown. The first micro light-emitting diode display 10 includes a substrate 102, a driving circuit layer 110, a plurality of blue micro light-emitting diodes 120, a quantum dot layer 130, and a color filter layer 140.

[0081] The substrate 102 can be, for example, a glass substrate for a general display, a flexible substrate, or a flexible substrate. The flexible substrate or the flexible substrate is, for example, a polyimide substrate, a polyethylene terephthalate (PET) substrate, a polyethylene naphthalate (PEN) substrate, or an ultra-thin glass, etc.

[0082] The driving circuit layer 110 is located on the substrate 102, and the driving circuit layer 110 is configured to drive the blue micro light-emitting diode 120 to emit light. The driving circuit layer 110 includes a plurality of sub-pixel driving circuits 112, and each sub-pixel driving circuit 112 defines a sub-pixel region 114 on the substrate 102. The plurality of sub-pixel regions 114 form a pixel region 115. For example, Figure 1 It shows that three sub-pixel regions 114 form a pixel region 115. In some embodiments, the driving circuit layer 110 includes a plurality of gate lines (not shown), a plurality of data lines (not shown), and a plurality of thin film transistors (not shown), and each thin film transistor is connected to at least one gate line and one data line. In some embodiments, each sub-pixel driving circuit 112 includes at least one thin film transistor, a portion of a gate line, and a portion of a data line. In other embodiments, each sub-pixel driving circuit 112 includes two thin film transistors, a capacitor (not shown), a portion of a gate line, a portion of a data line, and a portion of a write line (not shown). In some embodiments, the driving circuit layer 110 further includes a plurality of connection electrodes 116, and each sub-pixel driving circuit 112 includes two connection electrodes 116 for connecting the blue micro light-emitting diode 120.

[0083] The blue micro light-emitting diode 120 is located on the driving circuit layer 110, and each blue micro light-emitting diode 120 is connected to one of the sub-pixel driving circuits 112. Each sub-pixel driving circuit 112 is configured to drive the blue micro light-emitting diode 120 to emit blue light, and the wavelength (λmax) of the peak of the blue light spectrum can be between about 400 nm and about 480 nm. In some embodiments, each sub-pixel driving circuit 112 is connected to a blue micro light-emitting diode 120. The dimensional size of the length and / or width of each blue micro light-emitting diode 120 can be about 10 μm to about 70 μm.

[0084] In some embodiments, the blue micro light-emitting diode 120 includes a first electrode 121 and a second electrode 122. The first electrode 121 is, for example, a P electrode (P-electrode), and the second electrode 122 is, for example, an N electrode (N-electrode). The first electrode 121 and the second electrode 122 are each connected to the corresponding connection electrode 116 in the sub-pixel driving circuit 112.

[0085] Although Figure 1The bottom surface of the blue micro light-emitting diode 120 is shown to be flat in [description], but in some embodiments, the bottom surface of the blue micro light-emitting diode 120 has an asymmetric three-dimensional structure, and the first electrode 121 and the second electrode 122 are disposed on the asymmetric three-dimensional structure. In addition, the upper surface of the sub-pixel driving circuit 112 has a complementary structure substantially complementary to the three-dimensional structure of the blue micro light-emitting diode 120, and the connection electrodes 116 of each sub-pixel driving circuit 112 are located in the complementary structure. When the blue micro light-emitting diode 120 is transferred onto the driving circuit layer 110, the three-dimensional structure of the blue micro light-emitting diode 120 is fitted and matched with the complementary structure of the sub-pixel driving circuit 112, so that the first electrode 121 and the second electrode 122 of the blue micro light-emitting diode 120 can be aligned with their respective connection electrodes 116.

[0086] The quantum dot layer 130 is located above the blue micro light-emitting diode 120, and the blue micro light-emitting diode 120 is configured to excite the quantum dot layer 130 to emit light. In some embodiments, the quantum dot layer 130 includes a plurality of red light quantum dots, a plurality of green light quantum dots, and a plurality of blue light quantum dots. After the quantum dot layer 130 is excited by blue light, the red light quantum dots, the green light quantum dots, and the blue light quantum dots emit corresponding red light, green light, and blue light. In the quantum dot layer 130, the above various quantum dots are substantially uniformly distributed. In other words, the various quantum dots are mixed to form the quantum dot layer 130. In some embodiments, the quantum dot layer 130 is formed using coating and drying techniques. In other embodiments, the quantum dot layer 130 uses a quantum dot film, and the quantum dot layer 130 is formed by a lamination technique. In some embodiments, the wavelength (λmax) of the peak of the light spectrum emitted by the blue light quantum dots is greater than the wavelength of the peak of the light spectrum emitted by the blue micro light-emitting diode 120. In some embodiments, the full width at half maximum (FWHM) of the blue light spectrum emitted by the blue light quantum dots is greater than the full width at half maximum of the blue light spectrum emitted by the blue micro light-emitting diode 120. In some embodiments, the particle size of the red light quantum dots is about 5 nm to about 9 nm, the particle size of the green light quantum dots is about 2 nm to about 5 nm, and the particle size of the blue light quantum dots is about 1 nm to about 4 nm. However, in other embodiments, the particle size of the quantum dots depends on different quantum dot materials.

[0087] Figure 2Shows the emission light spectra of different quantum dots after being excited by blue light in the prior art. The first spectrum 11, the second spectrum 12, the third spectrum 13, the fourth spectrum 14, the fifth spectrum 15, and the sixth spectrum 16 are respectively the emission light spectra of quantum dots (QDs) with main peak wavelengths of approximately 460 nm, 520 nm, 580 nm, 610 nm, 660 nm, and 770 nm. In some embodiments, the quantum dot layer 130 contains quantum dots of other emission colors in addition to red, green, and blue quantum dots. For example, the quantum dot layer 130 contains quantum dots that emit the five spectra such as the first spectrum 11, the second spectrum 12, the third spectrum 13, the fourth spectrum 14, and the fifth spectrum 15. Therefore, in some embodiments, the emission light spectrum of the quantum dot layer 130 is a broadband spectrum, covering a range of wavelengths from approximately 400 nm to 750 nm.

[0088] Please refer again to Figure 1 , the color filter layer 140 is located above the quantum dot layer 130. In some embodiments, the color filter layer 140 includes a plurality of red filter layers 142, a plurality of green filter layers 143, and a plurality of blue filter layers 144. In some embodiments, each red filter layer 142, each green filter layer 143, and each blue filter layer 144 respectively correspond to a blue micro light-emitting diode 120. In still other embodiments, the color filter layer 140 further includes a patterned light-shielding layer 141, also known as a black matrix layer, for preventing light interference between adjacent sub-pixels. In some embodiments, the color filter layer 140 is formed above the quantum dot layer 130 by an inkjet printing process. In other embodiments, the color filter layer 140 is pre-formed on another substrate to form a so-called color filter, and then the color filter is disposed above the quantum dot layer 130.

[0089] Existing micro light-emitting diode displays use three different colors of micro light-emitting diodes, namely red, green, and blue, to manufacture the display. In current manufacturing technologies, mass transfer must be performed separately for red, green, and blue micro light-emitting diodes. Therefore, at least three mass transfer processes are required to complete the manufacture of the display, and each mass transfer consumes a large amount of process time. In contrast, according to the embodiments of the present invention, only the blue micro light-emitting diode 120 is used, so only one mass transfer is required to manufacture the display, significantly reducing the time required to manufacture the micro light-emitting diode display. In addition, in existing micro light-emitting diode displays, the driving voltages, decay rates, and luminous efficiencies of red, green, and blue micro light-emitting diodes are different, resulting in a more complex driving circuit design. In contrast, according to the embodiments of the present invention, only the blue micro light-emitting diode 120 is used, so the driving circuit is simpler.

[0090] Although the above embodiments describe a micro light-emitting diode display with red, green, and blue primary colors, in other embodiments, the first micro light-emitting diode display 10 may be a display with more than three display primary colors. Figure 3 A top view schematic diagram of the first micro light-emitting diode display 10 in some embodiments is shown. The first micro light-emitting diode display 10 is a six-primary-color display (red, green, blue, yellow, magenta, cyan), and the color filter layer 140 includes a plurality of red filter layers 142, a plurality of green filter layers 143, a plurality of blue filter layers 144, a plurality of yellow filter layers 145, a plurality of magenta filter layers 146, and a plurality of cyan filter layers 147. Each of the above filter layers corresponds to a blue micro light-emitting diode 120. Of course, the first micro light-emitting diode display 10 may also be a four-primary-color or five-primary-color display. In addition to the red filter layer 142, the green filter layer 143, and the blue filter layer 144, the color filter layer 140 further includes one or more of the yellow filter layer 145, the magenta filter layer 146, or the cyan filter layer 147.

[0091] As described above, existing micro light-emitting diode displays use micro light-emitting diodes with different emission colors, and mass transfer must be performed on micro light-emitting diodes of different colors separately. When the display requires more display primary colors, it will inevitably cause greater difficulties in the manufacturing process. In addition, the drive circuit design of existing micro light-emitting diode displays will also become very complex. In contrast, according to the embodiments of the present invention, a micro light-emitting diode display with more display primary colors can be easily completed.

[0092] Please refer to Figure 1 , in various different embodiments, the first micro light-emitting diode display 10 further includes a plurality of positioning structures 150. The positioning structures 150 are located on the drive circuit layer 110, and the positioning structures 150 are located between two adjacent blue micro light-emitting diodes 120. In still other embodiments, the positioning structures 150 overlap with the patterned light-shielding layer 141 in the direction F perpendicular to the substrate 102. In other embodiments, the height 150H of each positioning structure 150 is less than or substantially equal to the height 120H of each blue micro light-emitting diode 120. The positioning structures 150 are used to assist in positioning the blue micro light-emitting diodes 120 on the drive circuit layer 110.

[0093] Figure 4 A top view schematic diagram of the positioning structure 150 in some embodiments is shown. The positioning structure 150 includes a plurality of first-direction positioning structures 151. Specifically, the drive circuit layer 110 (labeled in Figure 1)Define a first direction D1 and a second direction D2 that are perpendicular to each other. The length direction of each first direction positioning structure 151 is substantially parallel to the first direction D1. Each first direction positioning structure 151 is located between two adjacent blue micro light-emitting diodes 120. More specifically, it is located between two adjacent blue micro light-emitting diodes 120 in the second direction D2.

[0094] In some embodiments, please refer to Figure 5 , the positioning structure 150 further includes a plurality of second direction positioning structures 152. The length direction of each second direction positioning structure 152 is substantially parallel to the second direction D2. Each second direction positioning structure 152 is located between two adjacent blue micro light-emitting diodes 120. More specifically, it is located between two adjacent blue micro light-emitting diodes 120 in the first direction D1.

[0095] Please refer to Figure 1 , in some embodiments, the first micro light-emitting diode display 10 further includes a first protective layer 161. The first protective layer 161 covers the positioning structure 150 and the blue micro light-emitting diodes 120. The first protective layer 161 is also referred to as a packaging layer, which is used to protect the driving circuit layer 110 and the blue micro light-emitting diodes 120 from the influence of oxygen and / or moisture in the air. The quantum dot layer 130 is located on the first protective layer 161. The first protective layer 161 is a material that is visible light transmissive. The light emitted by the blue micro light-emitting diodes 120 can penetrate the first protective layer 161 and reach the quantum dot layer 130. In some embodiments, the first protective layer 161 includes polymer materials such as epoxy, silicones, polyester, polyurethane, silicone resins, or the like.

[0096] In some embodiments, the first micro light-emitting diode display 10 further includes a second protective layer 162, and the second protective layer 162 is located between the quantum dot layer 130 and the color filter layer 140. In some embodiments, the quantum dot layer 130 is formed by laminating a quantum dot film, and the second protective layer 162 is one of the layer structures of the quantum dot film, which is used to protect the quantum dot layer 130 from the influence of oxygen and / or moisture in the air, or to avoid adverse reactions with the color filter layer 140 above it. In other embodiments, the second protective layer 162 is formed by coating or deposition techniques after the quantum dot layer 130 is formed. In some embodiments where the color filter layer 140 is formed by an inkjet process, different surface tensions or surface properties can be provided by the second protective layer 162 to reduce the diffusion of inkjet color patches, which helps to improve the yield of forming the color filter layer 140 using the inkjet process. In some embodiments, the second protective layer 162 includes inorganic materials such as silicon oxide, silicon nitride, aluminum oxide or the like, or organic passivation layers such as acrylics, epoxy resins, parylene, polyester, polyurethane, silicone resins or similar materials. In some embodiments, the thickness of the second protective layer 162 is less than the thickness of the first protective layer 161.

[0097] In some embodiments, the first micro light-emitting diode display 10 further includes a third protective layer 163, and the third protective layer 163 is used to protect the color filter layer 140. In some embodiments, the third protective layer 163 includes one or more of the group consisting of glass, silicone resins, polycarbonate, polyethylene terephthalate (PET), acrylic, polyurethane, anti-reflective coating or oleophobic coating.

[0098] Figure 6 A cross-sectional schematic diagram of a second micro light-emitting diode display 10a of certain embodiments is shown. The structure of the second micro light-emitting diode display 10a is the same as that described above with respect to Figure 1The first micro-LED display 10 is similar to the first micro-LED display 10. For the purpose of simplicity, only the differences between the two are described below. In the second micro-LED display 10a, the quantum dot layer 130 includes a plurality of quantum dot blocks 132 and a plurality of spacer blocks 134. The quantum dot blocks 132 include a plurality of quantum dots, and the spacer blocks 134 do not include quantum dots. The quantum dot blocks 132 and the spacer blocks 134 are substantially located in the same plane, and each quantum dot block 132 overlaps with each red filter layer 142, each green filter layer 143, or each blue filter layer 144 in the direction F perpendicular to the substrate 102.

[0099] In some embodiments, each spacer block 134 and the second protection layer 162 are made of substantially the same material. In other embodiments, each spacer block 134 is substantially made of a material that is not transparent to visible light. For example, the spacer block 134 includes a black pigment that absorbs visible light. In the above embodiments, the spacer block 134 can be used to block light interference between two adjacent pixels. In some embodiments, each spacer block 134 overlaps with each positioning structure 150 and / or the patterned light shielding layer 141 in the direction F perpendicular to the substrate 102. Figure 6 In the second micro LED display 10 a shown, the height 150H of each positioning structure 150 is substantially the same as the height 120H of each blue micro LED 120 .

[0100] Other features and implementations of the second micro LED display 10a may be, for example, Figure 1 Features and implementation of the first micro-LED display 10.

[0101] Figure 7 The cross-sectional view of the third micro-LED display 10b of some embodiments is shown. The structure of the third micro-LED display 10b is similar to that of the above-mentioned Figure 1 The first micro-LED display 10 is similar to the first micro-LED display 10. For the purpose of simplicity, only the differences between the two are described below. In the third micro-LED display 10b, the height 150H of each positioning structure 150 is greater than the height 120H of each blue micro-LED 120. In some embodiments, the upper surface 120A of each blue micro-LED 120 and the first side surface 155B and the second side surface 156B of two adjacent positioning structures 150 form a receiving space C, and the quantum dot layer 130 is located in the receiving space C. In other words, the quantum dot layer 130 includes a plurality of quantum dot blocks 132 corresponding to each sub-pixel area 114, and two adjacent quantum dot blocks 132 are separated by the positioning structure 150. In some embodiments, the quantum dot layer 130 is obtained by coating a liquid containing quantum dots in the receiving space C above each blue micro-LED 120 and then drying it, so as to obtain the quantum dot layer 130 located in the receiving space C.

[0102] In some embodiments, the first protective layer 161 covers the positioning structure 150, the blue micro light-emitting diode 120, and the quantum dot layer 130. In some embodiments, the second protective layer 162 is located between the first protective layer 161 and the color filter layer 140.

[0103] In still other embodiments, the positioning structure 150 is substantially made of a material that does not allow visible light to penetrate and has a relatively high height, which helps to block light interference between adjacent pixels.

[0104] The first micro light-emitting diode display 10, the second micro light-emitting diode display 10a, or the third micro light-emitting diode display 10b described in any of the foregoing embodiments can be applied to an asymmetric pixel structure or a structure in which a pixel includes four or more sub-pixels. In the above applications, compared with the existing micro light-emitting diode display technology, the embodiments of the present invention provide more outstanding technical advantages. Please refer to Figure 8 , which shows a top view schematic diagram of four sub-pixels of red (R), green (G), blue (B), and green (G). In Figure 8 , the areas of the red sub-pixel (R) and the blue sub-pixel (B) are each larger than the areas of the green sub-pixels (G). If the existing micro light-emitting diode display technology is used, in addition to having to manufacture micro light-emitting diodes of different sizes, when performing mass transfer, it is also necessary to transfer micro light-emitting diodes of different sizes, which obviously causes greater trouble to the manufacturing process. In contrast, the embodiments of the present invention can be easily completed. For example, by arranging a blue micro light-emitting diode in each of the red (R), green (G), blue (B), and green (G) sub-pixels and then changing the planar design of the color filter layer, the display effect of the red (R), green (G), blue (B), and green (G) four sub-pixels shown in Figure 8 can be achieved.

Claims

1. A micro light-emitting diode display, characterized in that, Comprising: A substrate; A driving circuit layer located on the substrate, the driving circuit layer comprising a plurality of sub-pixel driving circuits, and the plurality of sub-pixel driving circuits defining a plurality of sub-pixel regions on the substrate; A plurality of blue micro light-emitting diodes located on the driving circuit layer, and each of the blue micro light-emitting diodes being connected to one of the plurality of sub-pixel driving circuits; A plurality of positioning structures located on the driving circuit layer, and the positioning structures being located between two adjacent blue micro light-emitting diodes; A quantum dot layer located above the plurality of blue micro light-emitting diodes, wherein the plurality of blue micro light-emitting diodes are configured to excite the quantum dot layer to emit light; And A color filter layer located above the quantum dot layer.

2. The micro light-emitting diode display according to claim 1, wherein, The plurality of positioning structures comprise a plurality of first-direction positioning structures; Wherein the driving circuit layer defines a first direction and a second direction that are perpendicular to each other, the length direction of each of the first-direction positioning structures is substantially parallel to the first direction, and the first-direction positioning structures are located between two adjacent blue micro light-emitting diodes in the second direction.

3. The micro light-emitting diode display according to claim 2, wherein The plurality of positioning structures further comprise a plurality of second-direction positioning structures, the length direction of each of the second-direction positioning structures is substantially parallel to the second direction, and the second-direction positioning structures are located between two adjacent blue micro light-emitting diodes in the first direction.

4. A micro light-emitting diode display according to claim 1, wherein, The plurality of positioning structures are substantially made of a material that is not penetrable by visible light.

5. A micro light-emitting diode display according to claim 1, wherein, The color filter layer comprises a patterned light-shielding layer, and the plurality of positioning structures overlap with the patterned light-shielding layer in a direction perpendicular to the substrate.

6. A micro light-emitting diode display according to claim 1, characterized in that, The height of each of the positioning structures is less than or substantially equal to the height of each of the blue micro light-emitting diodes.

7. A micro light-emitting diode display according to any one of claims 1-6, characterized in that, It further comprises a first protective layer that covers the plurality of positioning structures and the plurality of blue micro light-emitting diodes, and the quantum dot layer is located on the first protective layer.

8. The micro light-emitting diode display according to claim 7, wherein, It further comprises a second protective layer that is located between the quantum dot layer and the color filter layer.

9. A micro light-emitting diode display according to claim 1, characterized in that, The height of each of the positioning structures is greater than the height of each of the blue micro light-emitting diodes.

10. A micro light-emitting diode display according to claim 9, characterized in that, One upper surface of each of the blue micro light-emitting diodes and one side surface of each of the two adjacent positioning structures form a receiving space, and the quantum dot layer is located in the receiving space.

11. A micro light-emitting diode display according to claim 10, wherein, It further comprises a first protective layer that covers the plurality of positioning structures, the plurality of blue micro light-emitting diodes and the quantum dot layer.

12. A micro light-emitting diode display according to claim 11, characterized in that, It further comprises a second protective layer that is located between the first protective layer and the color filter layer.

13. A micro light-emitting diode display according to claim 1 or 6 or 9, characterized in that, The color filter layer comprises a plurality of red filter layers, a plurality of green filter layers and a plurality of blue filter layers, and each of the red filter layers, each of the green filter layers and each of the blue filter layers respectively corresponds to one of the plurality of blue micro light-emitting diodes.

14. A micro light-emitting diode display according to claim 13, wherein, The quantum dot layer includes a plurality of quantum dot blocks and a plurality of spacer blocks. The plurality of quantum dot blocks include a plurality of quantum dots. The plurality of spacer blocks do not include quantum dots. The plurality of quantum dot blocks and the plurality of spacer blocks are substantially in the same plane. Each of the quantum dot blocks overlaps with each of the red color filter layers, each of the green color filter layers, or each of the blue color filter layers in a direction perpendicular to the substrate.

15. A micro light-emitting diode display according to claim 14, wherein, The plurality of spacer blocks are substantially made of a material that is not penetrable by visible light.

16. A micro light-emitting diode display according to claim 14, characterized in that, It further includes a plurality of positioning structures located on the driving circuit layer, and the positioning structures are located between two adjacent blue micro light-emitting diodes. Each of the spacer blocks overlaps with each of the positioning structures in the direction perpendicular to the substrate.

17. A micro light-emitting diode display according to claim 13, characterized in that, The color filter layer further includes a plurality of yellow color filter layers, a plurality of magenta color filter layers, or a plurality of cyan color filter layers, and each of the yellow color filter layers, each of the magenta color filter layers, or each of the cyan color filter layers corresponds to one of the plurality of blue micro light-emitting diodes respectively.

18. A micro light-emitting diode display according to claim 1, wherein The quantum dot layer includes a plurality of red light quantum dots, a plurality of green light quantum dots, and a plurality of blue light quantum dots.

19. A micro light-emitting diode display according to claim 1, characterized in that, The bottom surface of the blue micro light-emitting diode has an asymmetric three-dimensional structure, and the upper surface of the driving circuit has a complementary structure that is substantially complementary to the three-dimensional structure. The three-dimensional structure of the blue micro light-emitting diode is fitted into the complementary structure of the driving circuit.

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