Conductive glass with high transparency and low resistance

By designing a multi-layer coating structure on the conductive glass, the transmittance of the conductive glass is improved and the resistance is reduced, and the problems of the existing conductive glass are solved, thus realizing the application in perovskite solar cells.

CN223304350UActive Publication Date: 2025-09-05QINGDAO FLOAT GLASS CO LTD
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Patent Information

Application Number
CN202422642328.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-10-31
Publication Date
2025-09-05
Estimated Expiration
2034-10-31

AI Technical Summary

Technical Problem

The transmittance and conductivity of existing conductive glasses are low, limiting their application in the field of solar cells.

Method used

Conductive glass adopting a multi-layer coating structure, including a glass substrate and a variety of film layer materials and thickness designs, specifically a multi-layer film layer composed of Nb2O5 and SiO2, and a multi-layer film layer with a thickness of a specific range is superimposed on the glass substrate.

Benefits of technology

It achieves a transmittance of greater than or equal to 91%, and a resistance value of less than 10Ω. It is suitable for perovskite solar cells, reducing energy loss and expanding the application range of conductive glass.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model belongs to the technical field of conductive glass, and particularly discloses conductive glass with high transparency and low resistance. The conductive glass is used for solving the problems of low transmissivity and low conductivity of conductive glass in the current market. The high-transmittance and low-resistance conductive glass comprises a glass substrate, the glass substrate comprises a first surface and a second surface which are opposite to each other, a first coating film layer is arranged on the first surface, the first coating film layer comprises a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer which are sequentially arranged outwards from the first surface, and the fifth film layer is an ITO (Indium Tin Oxide) layer; a second coating film layer is arranged on the second surface; the second coating film layer comprises a sixth film layer, a seventh film layer, an eighth film layer and a ninth film layer from the second surface to the outside in sequence; the first film layer, the third film layer, the sixth film layer and the eighth film layer are all made of Nb2O5, and the second film layer, the fourth film layer, the seventh film layer and the ninth film layer are all made of SiO2. The solar cell panel has the characteristics of high transmittance and low resistance, and can be used as a cell panel in a perovskite solar cell.
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Description

Technical Field

[0001] The utility model belongs to the technical field of conductive glass, and in particular relates to a conductive glass with high transmittance and low resistance. Background Art

[0002] Conductive glass is a type of glass with low electrical resistance and the ability to conduct electricity. It also possesses high mechanical strength and corrosion resistance. However, the transmittance of currently available conductive glass is around 87%, and its conductivity is relatively low, limiting its application. Currently available conductive glass is primarily used in the upper layer (transparent conductive glass) of automotive electrochromic rearview mirrors and as the conductive layer of electrochromic glass, but is not suitable for use in solar cells. Utility Model Content

[0003] The purpose of the utility model is to provide a high-transmittance, low-resistance conductive glass, which effectively solves the problem of low transmittance and low conductivity of the conductive glass currently on the market.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0005] A high-transmittance, low-resistance conductive glass comprises a glass substrate, the glass substrate comprising a first surface and a second surface opposite to each other, a first coating layer being provided on the first surface, the first coating layer comprising, in order from the first surface outward, a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer, wherein the fifth film layer is an ITO layer.

[0006] A second coating layer is provided on the second surface, and the second coating layer includes a sixth film layer, a seventh film layer, an eighth film layer and a ninth film layer sequentially extending outward from the second surface.

[0007] The materials of the first film layer, the third film layer, the sixth film layer and the eighth film layer are all Nb2O5, and the materials of the second film layer, the fourth film layer, the seventh film layer and the ninth film layer are all SiO2.

[0008] The thickness of the first film layer and the sixth film layer is 8±4nm, the thickness of the second film layer and the seventh film layer is 33±1nm, the thickness of the third film layer and the eighth film layer is 110±4nm, the thickness of the fourth film layer and the ninth film layer is 84±2nm, and the thickness of the fifth film layer is 157±2nm.

[0009] Furthermore, the thickness of the glass substrate is 1.1 mm.

[0010] Furthermore, the glass substrate is an ultra-white glass substrate.

[0011] Furthermore, the thickness of the first film layer and the sixth film layer is 8nm, the thickness of the second film layer and the seventh film layer is 33nm, the thickness of the third film layer and the eighth film layer is 110nm, the thickness of the fourth film layer and the ninth film layer is 84nm, and the thickness of the fifth film layer is 157nm.

[0012] Compared with the prior art, the beneficial technical effects of the present invention are:

[0013] The transmittance of the present invention is greater than or equal to 91% and the resistance is below 10Ω. It has the characteristics of high transmittance and low resistance and can be used as a solar panel in a perovskite solar cell, so that it can fully absorb solar energy and reduce energy loss during energy conversion and transmission, thereby improving the application range of conductive glass. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a structural diagram of the present utility model.

[0015] Explanation of the accompanying reference numerals: glass substrate-1; first film layer-2; second film layer-3; third film layer-4; fourth film layer-5; fifth film layer-6; sixth film layer-7; seventh film layer-8; eighth film layer-9; ninth film layer-10. DETAILED DESCRIPTION

[0016] Example 1: A high-transmittance, low-resistance conductive glass includes a glass substrate 1. In this example, the glass substrate 1 is an ultra-white glass substrate with a thickness of 1.1 mm. The ultra-white glass substrate has a lower iron content than a normal white glass substrate and a higher light transmittance.

[0017] like Figure 1 As shown, the glass substrate 1 includes a first surface and a second surface opposite to each other, a first coating film layer is provided on the first surface, and the first coating film layer includes a first film layer 2, a second film layer 3, a third film layer 4, a fourth film layer 5 and a fifth film layer 6 in order from the first surface to the outside, wherein the fifth film layer 6 is an ITO layer; a second coating film layer is provided on the second surface, and the second coating film layer includes a sixth film layer 7, a seventh film layer 8, an eighth film layer 9 and a ninth film layer 10 in order from the second surface to the outside.

[0018] The materials of the first film layer 2 , the third film layer 4 , the sixth film layer 7 and the eighth film layer 9 are all Nb 2 O 5 , and the materials of the second film layer 3 , the fourth film layer 5 , the seventh film layer 8 and the ninth film layer 10 are all SiO 2 .

[0019] The thickness of the first film layer 2 and the sixth film layer 7 is 8±4 nm, the thickness of the second film layer 3 and the seventh film layer 8 is 33±1 nm, the thickness of the third film layer 4 and the eighth film layer 9 is 110±4 nm, the thickness of the fourth film layer 5 and the ninth film layer 10 is 84±2 nm, and the thickness of the fifth film layer 6 is approximately 157±2 nm. In this embodiment, the thickness of the first film layer 2 and the sixth film layer 7 is 8 nm, the thickness of the second film layer 3 and the seventh film layer 8 is 33 nm, the thickness of the third film layer 4 and the eighth film layer 9 is 110 nm, the thickness of the fourth film layer 5 and the ninth film layer 10 is 84 nm, and the thickness of the fifth film layer 6 is 157 nm.

[0020] The high-transmittance, low-resistance conductive glass of this utility model has a reflectivity of less than or equal to 3.7% for light incident at an 8° angle of incidence, a transmittance of greater than or equal to 91% for light incident at a 0° angle of incidence (light entering from the ITO layer of the conductive glass inward), and a resistance of less than 10Ω. In contrast, commercially available conductive glass has a transmittance of only greater than or equal to 87% for light incident at a 0° angle of incidence and a resistance of less than 14Ω.

[0021] The utility model has the characteristics of high transmittance and low resistance, and can be used as a battery panel in a perovskite solar cell, so that it can fully absorb solar energy and reduce energy loss during energy conversion and transmission, thereby improving the application range of conductive glass.

[0022] Parts not described in the present invention can be realized by adopting or drawing on existing technologies.

[0023] Of course, the above description is not a limitation of the present invention, and the present invention is not limited to the above examples. Changes, modifications, additions or substitutions made by technicians in this technical field within the essential scope of the present invention should also fall within the scope of protection of the present invention.

Claims

1. A high-transmittance, low-resistance conductive glass, characterized in that: The glass substrate includes a first surface and a second surface opposite to each other, a first coating layer is provided on the first surface, and the first coating layer includes a first film layer, a second film layer, a third film layer, a fourth film layer and a fifth film layer in order from the first surface outward, wherein the fifth film layer is an ITO layer; A second coating layer is provided on the second surface, and the second coating layer includes a sixth film layer, a seventh film layer, an eighth film layer and a ninth film layer in order from the second surface outward; The materials of the first film layer, the third film layer, the sixth film layer and the eighth film layer are all Nb2O5, and the materials of the second film layer, the fourth film layer, the seventh film layer and the ninth film layer are all SiO2; The thickness of the first film layer and the sixth film layer is 8±4nm, the thickness of the second film layer and the seventh film layer is 33±1nm, the thickness of the third film layer and the eighth film layer is 110±4nm, the thickness of the fourth film layer and the ninth film layer is 84±2nm, and the thickness of the fifth film layer is 157±2nm.

2. The high-transmittance, low-resistance conductive glass according to claim 1, characterized in that: The thickness of the glass substrate is 1.1 mm.

3. The high-transmittance, low-resistance conductive glass according to claim 2, characterized in that: The glass substrate is an ultra-white glass substrate.

4. The high-transmittance, low-resistance conductive glass according to claim 3, characterized in that: The thickness of the first film layer and the sixth film layer is 8nm, the thickness of the second film layer and the seventh film layer is 33nm, the thickness of the third film layer and the eighth film layer is 110nm, the thickness of the fourth film layer and the ninth film layer is 84nm, and the thickness of the fifth film layer is 157nm.