Light-emitting LED chip, light bar, backlight module and display device

By setting up a light-enhancing section and a continuous light-enhancing surface on the light-emitting LED chip of the MiniLED TV, the problem of limited light-emitting angle is solved, achieving a larger light-emitting range and higher production efficiency.

CN223694243UActive Publication Date: 2025-12-19SHENZHEN SKYWORTH DISPLAY TECH CO LTD
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Patent Information

Application Number
CN202423010079.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-04
Publication Date
2025-12-19
Estimated Expiration
2034-12-04

AI Technical Summary

Technical Problem

MiniLED TV lamp beads are limited by the light emission angle, which leads to a large number of beads being required, reducing production efficiency.

Method used

Design a light-emitting LED chip by setting a light-enhancing part on a substrate and forming a continuous light-enhancing surface thereon, so that the light-emitting structure is gradually tapered along the direction away from the substrate, thereby increasing the light-emitting angle.

Benefits of technology

It increases the light-emitting range, reduces the number of LED chips required, improves production efficiency, and maintains the light intensity.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a luminous LED chip, light bar, backlight module and display equipment, relates to display equipment technical field, the luminous LED chip includes substrate and luminous structure, the substrate has first end and second end opposite in first direction, the first end of substrate is provided with at least one intensifying portion, the second end of substrate is provided with at least one intensifying portion, and the first end of substrate is provided with at least one intensifying portion. The intensifying part comprises a first side and a second side which are opposite in the first direction, and the second side of the intensifying part is arranged corresponding to the first end of the substrate; the light-emitting structure comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer which are stacked in sequence; the outer peripheral face of the first side and the outer peripheral face of the second side are in butt joint to form a continuous light intensifying face, the projection of the first side in the first direction falls in the second side, and the width, in the second direction, of the light intensifying face is gradually reduced in the first direction away from the first end. According to the technical scheme provided by the utility model, the light-emitting angles of the light-emitting LED chips are increased, the number of the arranged light-emitting LED chips is reduced, and the production efficiency is improved.
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Description

TECHNICAL FIELD

[0001] The utility model relates to display equipment technical field, especially relate to a light emitting LED chip, lamp bar, backlight module and display equipment. BACKGROUND

[0002] MiniLED has many advantages such as ultra-thin, high brightness, high color gamut, high contrast ratio compared with conventional television, makes it become the first choice of high-end LCD television at present. For example Figure 1 As shown in the figure, MiniLED television basically does not adopt the secondary optical lens corresponding to the conventional LCD television lamp bead to ensure its high contrast ratio.

[0003] The MiniLED television lamp bead in the prior art is limited by the light emitting angle, so the number of settings needs to be more, which reduces the production efficiency. UTILITY MODEL CONTENTS

[0004] The utility model discloses a light emitting LED chip, lamp bar, backlight module and display equipment, aims at increasing the light emitting angle of light emitting LED chip, reducing the number of light emitting LED chip settings, and improving production efficiency.

[0005] To achieve the above object, the utility model further proposes a light emitting LED chip, including substrate and light emitting structure, substrate has the first end and second end opposite in the first direction, at least one light enhancement part is arranged on the first end of the substrate, the light enhancement part includes the first side and the second side opposite in the first direction, and the second side of the light enhancement part is correspondingly arranged on the first end of the substrate, the light emitting structure is arranged on the at least one light enhancement part, and the light emitting structure includes N-type semiconductor layer, light emitting layer and P-type semiconductor layer stacked in turn, wherein the outer periphery of the first side and the outer periphery of the second side are connected to form a continuous light enhancement surface, the projection of the first side in the first direction falls in the second side, and the width of the light enhancement surface in the second direction is gradually tapered away from the first end in the first direction, so as to increase the light emitting angle of the light emitting structure.

[0006] In an embodiment, a plurality of light enhancement parts are arranged on the first end, and / or,

[0007] The projection of the second side in the first direction coincides with the first end.

[0008] In an embodiment, the width of the light enhancement surface in the second direction is equally contracted away from the first end in the first direction.

[0009] In an embodiment, the light enhancement part is arranged in the form of a cone.

[0010] In an embodiment, the angle between the light enhancement surface and the second direction is α, and the α is between 0-30°.

[0011] In an embodiment, the α is between 7-12°.

[0012] In an embodiment, the light enhancement portion is integrally arranged with the substrate.

[0013] The application also provides a lamp strip comprising the light emitting LED chip, the light emitting LED chip comprising a substrate and a light emitting structure, the substrate having a first end and a second end opposite in a first direction, at least one light enhancement portion being arranged on the first end of the substrate, the at least one light enhancement portion being arranged as a light enhancement portion, the light enhancement portion comprising a first side and a second side opposite in the first direction, the second side of the light enhancement portion being arranged corresponding to the first end of the substrate; the light emitting structure being arranged on the at least one light enhancement portion, the light emitting structure comprising an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer stacked in sequence; wherein the outer periphery surface of the first side and the outer periphery surface of the second side are connected to form a continuous light enhancement surface, the projection of the first side in the first direction falls within the second side, and the width of the light enhancement surface in the second direction is arranged to be tapered away from the first end in the first direction, so as to increase the light emitting angle of the light emitting structure.

[0014] The application also provides a backlight module comprising the lamp strip, the lamp strip comprising the light emitting LED chip, the light emitting LED chip comprising a substrate and a light emitting structure, the substrate having a first end and a second end opposite in a first direction, at least one light enhancement portion being arranged on the first end of the substrate, the at least one light enhancement portion being arranged as a light enhancement portion, the light enhancement portion comprising a first side and a second side opposite in the first direction, the second side of the light enhancement portion being arranged corresponding to the first end of the substrate; the light emitting structure being arranged on the at least one light enhancement portion, the light emitting structure comprising an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer stacked in sequence; wherein the outer periphery surface of the first side and the outer periphery surface of the second side are connected to form a continuous light enhancement surface, the projection of the first side in the first direction falls within the second side, and the width of the light enhancement surface in the second direction is arranged to be tapered away from the first end in the first direction, so as to increase the light emitting angle of the light emitting structure.

[0015] The application further provides a display device comprising the backlight module, and the backlight module comprises a lamp strip, and the lamp strip comprises the light-emitting LED chip.

[0016] In the technical scheme of the present application, the N-type semiconductor layer and the P-type semiconductor layer provide electron and hole injection channels respectively, and the light-emitting layer is used to limit the movement of electrons and holes therein, thereby realizing the emission of photons. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical scheme in the embodiments of the present application or the prior art, the drawings needed in the following embodiment or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0018] Figure 1 The structural schematic diagram of the light-emitting LED chip according to an embodiment of the present application is provided.

[0019] Figure 2 For Figure 1 The light-emitting LED chip is compared with the light-emitting angle of the lamp bead in the prior art.

[0020] Brief Description of the Drawings:

[0021] 100, light-emitting LED chip;

[0022] 1, substrate; 11, first end; 12, second end; 13, light enhancement part; 131, first side, 132, second side; 133, light enhancement surface;

[0023] 2, light-emitting structure; 21, N-type semiconductor layer; 22, light-emitting layer; 23, P-type semiconductor layer.

[0024] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0026] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative positional relationship, movement condition, etc. between the components in a certain posture, and if the certain posture changes, the directional indications also change accordingly.

[0027] In addition, if the embodiments of the present application involve descriptions of "first", "second", etc., the descriptions of "first", "second", etc. are only for description purposes, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features with "first" and "second" can explicitly or implicitly include at least one of the features. In addition, "and / or" or "and / or" appearing throughout the text means that the three parallel schemes are included, for example, "A and / or B" includes A scheme, or B scheme, or A and B simultaneously satisfy the scheme. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the realization of the ordinary skilled in the art, and when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor within the scope of protection required by the present application.

[0028] MiniLED technology offers numerous advantages over conventional TVs, including ultra-thinness, high brightness, wide color gamut, and high contrast, making it the preferred choice for high-end LCD TVs. For example... Figure 1 As shown, to ensure its high contrast, MiniLED TVs generally do not use the secondary optical lenses that are used with conventional LCD TV LED chips.

[0029] Existing MiniLED TV LED chips are limited by their light emission angle, thus requiring a large number of chips, which reduces production efficiency.

[0030] It should be noted that the first direction referred to in this article is the thickness direction of the substrate 1, and the second direction referred to in this article is the horizontal direction perpendicular to the first direction, that is, the extension direction of the substrate 1.

[0031] To solve the above technical problems, such as Figure 1 As shown, this utility model also proposes a light-emitting LED chip 100, including a substrate 1 and a light-emitting structure 2. The substrate 1 has a first end 11 and a second end 12 opposite to each other in a first direction. At least one light-enhancing part 13 is disposed on the first end 11 of the substrate 1. The light-enhancing part 13 includes a first side 131 and a second side 132 opposite to each other in the first direction. The second side 132 of the light-enhancing part 13 is disposed corresponding to the first end 11 of the substrate 1. The light-emitting structure 2 is disposed on the at least one light-enhancing part 13. The light-emitting structure 2 includes an N-type semiconductor layer 21, a light-emitting layer 22 and a P-type semiconductor layer 23 stacked sequentially. The outer peripheral surface of the first side 131 and the outer peripheral surface of the second side 132 are connected to form a continuous light-enhancing surface 133. The projection of the first side 131 in the first direction falls within the second side 132, and the width of the light-enhancing surface 133 in the second direction is gradually reduced along the first direction away from the first end 11 to increase the light-emitting angle of the light-emitting structure 2.

[0032] In the technical scheme of the utility model, the N type semiconductor layer 21 and the P type semiconductor layer 23 provide electron and hole injection channel respectively, and the light emitting layer 22 is used to limit the movement of electron and hole in it, thereby realizing the emission of photon. The light enhancement surface 133 formed on the light enhancement part 13 provides support for the light emitting structure 2 and makes the light emitting structure 2 protrude, so that the width of the light emitting structure 2 in the second direction is tapered in the first direction away from the first end 11 (that is, the part of the light emitting structure 2 corresponding to the first side 131 has the farthest distance from the first end 11, the part of the light emitting structure 2 corresponding to the second side 132 has the nearest distance from the first end 11, and the part of the light emitting structure 2 corresponding to the light enhancement surface 133 gradually shrinks from the outer circumferential surface of the second side 132 to the outer circumferential surface of the first side 131 in the process of moving away from the first end 11 in the first direction), so that the light emitting angle of the light emitting structure 2 can be close to the second direction, thereby increasing the light emitting angle of the light emitting structure 2, so that the angle of the light emitted can be increased, thereby improving the light emitting range of the single light emitting LED chip 100. The number of light emitting LED chips 100 is reduced, and the production efficiency is improved. In addition, it is worth mentioning that the light enhancement part 13 not only enlarges the light emitting angle of the light emitting layer 22, but also increases the light emitting surface area of the light emitting layer 22, so that the light intensity of the light emitted by the light emitting layer 22 does not decrease, thereby increasing the light emitting angle of the light emitting structure 2 without sacrificing the light intensity.

[0033] It can be understood that the outer circumferential surface of the first side 131 and the outer circumferential surface of the second side 132 referred to herein refer to the surfaces that can contact the light emitting structure 2. The continuous light enhancement surface 133 referred to herein refers to the surface formed by the abutment of the outer circumferential surface of the first side 131 and the outer circumferential surface of the second side 132. The surface is continuous in physics without fracture or gap, and can be used to support the light emitted by the light emitting layer 22 in the light emitting structure 2 to smoothly transition in the first direction, thereby improving the uniformity of light emission.

[0034] In one embodiment, the light-enhancing surface 133 has a shape that is tapered, for example, a polygonal taper shape (the light-enhancing portion 13111 is formed as a structure having a plurality of planes, each of which is inclined towards the middle. The light-enhancing surface 133 has a width in the second direction that is tapered in the first direction away from the first end 11). For example, a prism, a pyramid.

[0035] In order to improve the uniformity of the light emitted by the light-emitting structure 2, in one embodiment, the light-enhancing surface 133 has a width in the second direction that is tapered in the first direction away from the first end 11, such that the light-enhancing surface 133 has a shape that is flat, for example, a polygonal inclined shape (the light-enhancing portion 13111 is formed as a structure having a plurality of planes, each of which is inclined towards the middle. The light-enhancing surface 133 has a width in the second direction that is tapered in the first direction away from the first end 11). For example, a prism, a pyramid.

[0036] In particular, in one embodiment, the light-enhancing portion 13 has a shape that is conical. The light-enhancing portion 13 is formed as a structure that is tapered, with a wider base and a narrower top. In this way, the light-emitting structure 2 formed has a conical shape, and because the sides of the cone are inclined, the light spreads gradually along the inclined sides during propagation. The light emitted by the light-emitting structure 2 is then emitted uniformly along the sides of the pyramid. The cone can be a circular cone, a prism or a pyramid.

[0037] The distribution of the light emitted by the light-emitting structure 2 can be changed by adjusting the angle and height of the light-enhancing portion 13, which is formed as a conical shape. In one embodiment, the angle between the light-enhancing surface 133 and the second direction is a, and a is between 0 and 30°. The a can be 1°, 5°, 7°, 9°, 11°, 15°, 23° or 29°. In this way, the uniformity of the light emitted by the light-emitting structure 2 can be improved. In order to facilitate the formation of the light-emitting structure 2 during production, in a further embodiment, a is between 7 and 12°. The a can be 7°, 9°, 10°, 11° or 12°.

[0038] It can be deduced that the light-emitting angle of the normal light-emitting LED chip 100 is β, and the light-emitting angle of the light-emitting LED chip 100 adopting the utility model is β+2α. The backlight scheme distance adopting the utility model scheme is improved from P1 to P2, and the corresponding relationship of P1 and P2 is confirmed as follows with the light mixing distance as D:

[0039] P1 = 2D*tan(β / 2)

[0040]

[0041] The following examples are given, and the initial angle of the normal light-emitting LED chip 100 is usually 120°, and the initial angle α is 5°. According to the initial angle of 5°, P2 / P1 = 1.238 is calculated, corresponding to a reduction of 35% in the number of lamp beads, and the cost of lamp beads can be reduced by 35%; if the angle is 10°, P2 / P1 = 1.586 is calculated, corresponding to a reduction of 60% in the number of lamp beads, and the cost of lamp beads can be reduced by 60%.

[0042] In addition to the above, the light increasing surface 133 can also be a composite shape, which is obtained by combining the shapes of the light increasing surfaces described above, so that the light emitted by the light-emitting structure 2 has more complex light to meet different design requirements. For example, the convex lens shape is combined with the parabolic shape or the dome shape is combined with the conical shape. Here, no more description is given. It should be noted that the shape of the light increasing part 13 is limited by the process in actual manufacturing and the material characteristics. Therefore, it can be selected according to the design requirements.

[0043] It can be understood that the material of the light increasing part 13 can be the same as or different from the material of the substrate 1. In order to improve the adhesion of the light-emitting structure 2, reduce the delamination possibility between the light-emitting structure 2 and the light increasing part 13, and improve the reliability and service life of the light-emitting LED chip 100, the material of the light increasing part 13 can be sapphire, silicon carbide, silicon (Si) or gallium nitride. Further, in order to reduce the connection strength between the light increasing part 13 and the substrate 1 caused by connection, the material of the light increasing part 13 can be the same as the material of the substrate 1, and therefore, in an embodiment, the light increasing part 13 and the substrate 1 are integrally arranged. In this way, the connection strength between the light increasing part 13 and the substrate 1 can be increased, and the delamination possibility between the two can be reduced, thereby prolonging the service life of the light-emitting LED chip 100. The light increasing part 13 can be formed by grinding or cutting the substrate 1. Here, no special limitation is given.

[0044] It can be understood that the more the light emitting structure 2 is arranged on the surface of the first end 11 of the substrate 1, the more the area of the surface of the first end 11 can be fully utilized to improve the light intensity that can be emitted thereon. To this end, in an embodiment, the first end 11 is provided with a plurality of light increasing portions 13. In this way, by distributing a plurality of light increasing portions 13 on the entire surface of the first end 11, light can be emitted from more angles, thereby improving the coverage and intensity of the light. In addition, in another embodiment, the projection of the second side 132 in the first direction coincides with the first end 11. In this way, by making the projection of the second side 132 coincide with the first end 11, the surface area on the first end 11 can be fully utilized to increase the light emitting angle and light emitting area of the light emitting structure 2, thereby reducing the volume or size of the light emitting LED chip 100.

[0045] It can be understood that in the manufacturing process of the light emitting LED chip 100, in order to reduce the manufacturing difficulty of the light emitting structure, each layer in the light emitting structure 2 can be deposited on the light increasing portion 13 by the metal organic chemical vapor deposition method. In this way, the thickness of each layer in the light emitting structure 2 can be very accurately controlled, which is beneficial to improve the intensity of the light of the light emitting LED chip 100. In addition, by adjusting the reaction conditions (such as temperature, pressure, gas flow, etc.), the thickness and composition of each layer can be highly controlled to meet the actual production needs. In addition, the thickness of each layer in the light emitting structure 2 can be set at each position, which can ensure that the electrons and holes are uniformly distributed inside the chip, thereby optimizing the recombination process of the carriers in the light emitting layer 22 and improving the light emitting uniformity and stability of the LED chip.

[0046] In an embodiment, the P-type semiconductor layer 23 away from the light emitting layer 22 is provided with a protective layer, and the second end 12 of the substrate 1 is provided with a reflective layer. In this way, the protective layer can reduce the pollution or oxidation of the light emitting layer 22, thereby ensuring the stability of its performance. The reflective layer can reflect the light emitted by the light emitting layer 22 back to the light emitting layer 22, thereby improving the light emitting efficiency.

[0047] The utility model also proposes a lamp strip, the lamp strip includes light emitting LED chip 100, the specific structure of light emitting LED chip 100 refers to the above-mentioned embodiment, because the lamp strip adopts all the technical schemes of the above-mentioned all embodiments, therefore at least has all the beneficial effects brought by the technical scheme of the above-mentioned embodiment, here will not repeat.

[0048] The utility model discloses still propose a kind of backlight module, the backlight module includes light bar, the specific structure of the light bar refers to above-mentioned embodiment, since the present backlight module has adopted all technical solutions of above-mentioned all embodiments, therefore at least have all beneficial effects brought by the technical scheme of above-mentioned embodiment, here no longer one by one elaboration.

[0049] The utility model discloses still propose a kind of display equipment, the display equipment includes backlight module, the specific structure of the backlight module refers to above-mentioned embodiment, since the present display equipment has adopted all technical solutions of above-mentioned all embodiments, therefore at least have all beneficial effects brought by the technical scheme of above-mentioned embodiment, here no longer one by one elaboration.

[0050] The above-mentioned is only the exemplary implementation of the utility model, and not therefore limit the patent range of the utility model, is in the technical concept of the utility model, utilizes the equivalent structural transformation of the utility model specification and attached drawing contents, or direct / indirect application in other relevant technical field all include in the patent protection range of the utility model.

Claims

1. A light emitting LED chip, characterized by, The application relates to a light-emitting LED chip, comprising: a substrate having a first end and a second end opposite to each other in a first direction, at least one light-enhancing part being arranged on the first end of the substrate, the light-enhancing part comprising a first side and a second side opposite to each other in the first direction, the second side of the light-enhancing part being arranged corresponding to the first end of the substrate; and a light-emitting structure arranged on the at least one light-enhancing part, the light-emitting structure comprising an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer stacked in sequence; wherein an outer circumferential surface of the first side and an outer circumferential surface of the second side are connected to form a continuous light-enhancing surface, a projection of the first side in the first direction falls within the second side, and a width of the light-enhancing surface in a second direction is arranged to be tapered away from the first end in the first direction, so as to increase a light-emitting angle of the light-emitting structure.

2. The light emitting LED chip of claim 1, wherein, a plurality of light-enhancing parts are arranged on the first end; and / or a projection of the second side in the first direction coincides with the first end.

3. The light emitting LED chip of claim 1, wherein, the width of the light-enhancing surface in the second direction is arranged to be equidistantly contracted away from the first end in the first direction.

4. The light emitting LED chip of claim 3, wherein, the light-enhancing part is arranged in a pyramidal shape.

5. The light emitting LED chip of claim 3, wherein, an angle between the light-enhancing surface and the second direction is alpha, and the alpha is between 0-30 degrees.

6. The light emitting LED chip of claim 5, wherein, the alpha is between 7-12 degrees.

7. The light emitting LED chip of claim 5, wherein, the light-enhancing part is arranged integrally with the substrate.

8. A light bar, characterized in that The application further relates to a light-emitting LED chip comprising any one of the light-emitting LED chips as claimed in claims 1-7.

9. A backlight module, characterized in that, The application further relates to a light bar comprising the light-emitting LED chip as claimed in claim 8.

10. A display device, characterized by The application further relates to a backlight module comprising the light-emitting LED chip as claimed in claim 9.