Optoelectronic device and display apparatus

Abstract

The utility model belongs to the technical field of display, and relates to a photoelectric device which comprises an electroluminescent unit and a photoluminescent unit which are arranged in a stacked mode. Wherein the total thickness T of the photoelectric device is equal to the length of the mth section of cavity of the electroluminescent unit and equal to the length of the nth section of cavity of the photoluminescent unit, and m and n are both integers greater than 1. The utility model further relates to a display device. According to the technical scheme, the top emission microcavity effect can be utilized, two microcavity effects are considered in the same device at the same time, light emission of the electroluminescence unit and light emission of the photoluminescence unit are enhanced at the same time, and the light emission efficiency and brightness of the whole device are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a photoelectric device and a display device. BACKGROUND

[0002] In the development process of the current electronic device, the requirement of light emitting efficiency is higher and higher, but the light emitting performance of the photoelectric device still needs to be improved. CONTENT

[0003] Therefore, the photoelectric device provided by the embodiments of the present application adopts the technical scheme as follows:

[0004] A photoelectric device, comprising an electroluminescent unit and a photoluminescent unit which are stacked.

[0005] The device total thickness T of the photoelectric device is equal to the mth cavity length of the electroluminescent unit and equal to the nth cavity length of the photoluminescent unit, and m and n are both integers greater than 1.

[0006] The embodiments of the present application also provide a display device which adopts the technical scheme as follows:

[0007] The display device comprises the photoelectric device.

[0008] Compared with the prior art, the present application has the following beneficial effects: the device total thickness T of the photoelectric device is equal to the mth cavity length of the electroluminescent unit and equal to the nth cavity length of the photoluminescent unit, the top emission microcavity effect is utilized and the two microcavity effects are considered in the same device at the same time, the light emitting of the electroluminescent unit and the light emitting of the photoluminescent unit are enhanced at the same time, and the light emitting efficiency and brightness of the whole device are improved. BRIEF DESCRIPTION OF DRAWINGS

[0009] In order to more clearly illustrate the scheme of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0010] Figure 1 is one of the structure schematic diagrams of the photoelectric device of the embodiments of the present application;

[0011] Figure 2 is the second structure schematic diagram of the photoelectric device of the embodiments of the present application;

[0012] Figure 3 is the optical simulation result of the blue OLED in the first embodiment;

[0013] Figure 4 is the optical simulation result of RQD in Example One;

[0014] Figure 5 is the optical simulation result of blue OLED in Example Two;

[0015] Figure 6 is the optical simulation result of GQD in Example Two;

[0016] Figure 7 is the optical simulation result of blue OLED in Example Three;

[0017] Figure 8 is the optical simulation result of RQD in Example Three;

[0018] Figure 9 is a structural schematic diagram of a prior art QD-OLED device.

[0019] The figure mark: 1, substrate; 100, electroluminescent unit; 200, photoluminescent unit; 20, light-emitting sub-unit; 2, encapsulation layer; 3, photoluminescent layer; 41, first anode; 42, second anode; 51, first hole injection layer; 52, second hole injection layer; 61, first hole transport layer; 62, second hole transport layer; 71, first electroluminescent layer; 72, second electroluminescent layer; 73, connecting layer; 81, first electron transport layer; 82, second electron transport layer; 91, first cathode; 92, second cathode; 10, reflective layer. DETAILED DESCRIPTION

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application; the present application will be described with reference to the drawings in which is shown by way of illustration various embodiments of the application. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The use of the terms "including," "comprising," or "having" and variations thereof herein is intended to be broad and encompass the terms "consisting of" and "consisting essentially of," and variations thereof. The use of the terms "first," "second," and the like does not imply a limitation on the number of objects that can comprise the elements, but rather the order in which the objects are described.

[0021] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily all referring to a common set of embodiments. It is expressly understood that any of the embodiments described herein can be incorporated in to another embodiment.

[0022] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application. In addition, it should be understood that the specific implementation described herein is only used to illustrate and explain the present application, and is not used to limit the present application.

[0023] In the present application, the orientation words such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing surface direction in the drawings, and "inner" and "outer" refer to the contour of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0024] In the present application, "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can represent the following cases: A exists alone, A and B exist together, and B exists alone. Wherein A and B can be singular or plural.

[0025] In the present application, "at least one" means one or more, and "multiple" means two or more. "At least one", "at least one of the following" or the like means any combination of these items, including any combination of single item or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can represent a, b, c, a-b (i.e. a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.

[0026] Various embodiments of the present application can exist in the form of a range; it should be understood that the description in the form of a range is only for the convenience and brevity, and should not be understood as a hard limit on the scope of the present application; therefore, it should be considered that the described range has been specifically disclosed all possible sub-ranges and single values within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated in the present application, it refers to any cited number (fraction or integer) within the indicated range.

[0027] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0028] Organic light-emitting diodes (OLEDs) have become the mainstream technology in the display field due to their superior display performance, including self-illumination, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display capabilities. Quantum dot light-emitting diodes (QLEDs) have the advantages of saturated emitted light color and tunable wavelength, and also have high quantum yields in both photoluminescence and electroluminescence. In recent years, QD-OLEDs have been considered by many manufacturers as the ultimate display technology solution.

[0029] Currently, QD-OLED devices use blue OLEDs as backlights to excite photoluminescence (QD). However, in existing technologies, after the OLED is completed, multiple inorganic and / or organic encapsulation layers are first set up, and then photoluminescence is performed on the inorganic and / or organic encapsulation layers for further encapsulation. The total thickness of existing QD-OLED devices reaches hundreds of micrometers or even millimeters, making it impossible to achieve microcavity structures and failing to consider or utilize the microcavity effect.

[0030] As attached Figure 1 and attached Figure 2 As shown, an optoelectronic device includes an electroluminescent unit 100 and a photoluminescent unit 200 stacked together.

[0031] Wherein, the total thickness T of the optoelectronic device is equal to the length of the m-th cavity of the electroluminescent unit 100 and equal to the length of the n-th cavity of the photoluminescent unit 200, where m and n are both integers greater than 1.

[0032] This application improves the luminous efficiency and brightness of the entire device by making the total thickness T of the optoelectronic device equal to the length of the m-th cavity of the electroluminescent unit 100 and the length of the n-th cavity of the photoluminescent unit 200, utilizing the top-emission microcavity effect and considering both microcavity effects in the same device, thereby enhancing the luminescence of both the electroluminescent unit 100 and the photoluminescent unit 200.

[0033] Furthermore, the optoelectronic device has a microcavity effect. After optical simulation of the electroluminescent unit 100 and the photoluminescent unit 200, the electroluminescent unit 100 and the photoluminescent unit 200 will be in a light-enhanced state at the peak position of a sine wave in the optical simulation results. The number of the peaks from left to right is the number of the cavity length, that is, the Nth peak is the Nth cavity length.

[0034] In one embodiment, the ratio of the thickness of the electroluminescent unit 100 to the thickness of the photoluminescent unit 200 is (1:1) to (2:1).

[0035] The appropriate thickness range is set, which not only can effectively reduce unnecessary photoluminescent unit 200 film layer, but also can make the electroluminescent unit 100 and the photoluminescent unit 200 reach the best optical intensity at the same time, and the optoelectronic device forms a microcavity structure inside, the optoelectronic device utilizes the microcavity effect, which can increase the light intensity of the microcavity structure emission wavelength, thereby improving the light-emitting efficiency and brightness of the optoelectronic device and prolonging its service life.

[0036] It can be understood that the ratio of the thickness of the electroluminescent unit 100 to the thickness of the photoluminescent unit 200 can be any one of 1.1:1, 1.2:1, 1.3:1, 1.4:1, 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2:1 or a range formed by any two of them.

[0037] In one embodiment, the photoluminescent unit 200 includes at least one photoluminescent sub-unit 20, the photoluminescent sub-unit 20 includes a packaging layer 2 and a photoluminescent layer 3 arranged in a stack, the packaging layer 2 is arranged between the electroluminescent unit 100 and the photoluminescent layer 3; and / or,

[0038] The electroluminescent unit 100 includes at least one electroluminescent sub-unit or at least one stacked electroluminescent unit;

[0039] The electroluminescent sub-unit includes a first anode 41, a first electroluminescent layer 71 and a first cathode 91 arranged in a stack;

[0040] The stacked electroluminescent unit includes a second anode 42, a stacked electroluminescent sub-unit and a second cathode 92 arranged in a stack; wherein the stacked electroluminescent sub-unit includes at least two second electroluminescent layers 72 and a connecting layer 73 arranged between the two second electroluminescent layers 72.

[0041] The electroluminescent unit 100 can use single-layer electroluminescent sub-units or stacked electroluminescent units. Whether it is a single-layer optoelectronic device or a stacked optoelectronic device, a microcavity structure can be formed inside the optoelectronic device. The optoelectronic device utilizes the microcavity effect, which can increase the light intensity of the microcavity structure emission wavelength, thereby improving the light-emitting efficiency and brightness of the optoelectronic device and prolonging its service life. At the same time, the stacked optoelectronic device further improves the current efficiency and light-emitting brightness, reduces the exciton annihilation rate, thereby further improving the light-emitting efficiency and brightness of the optoelectronic device and prolonging its service life.

[0042] In one embodiment, the connecting layer 73 comprises a charge generation layer, which can generate electron and hole pairs under the action of an applied electric field, and these carriers are then injected into the upper and lower second electroluminescent layers 72 respectively and combine to emit light in the second electroluminescent layers 72.

[0043] In one embodiment, in one of the photoluminescent sub-units, the thickness ratio of the photoluminescent layer 3 to the encapsulating layer 2 is (1.5:1) to (1:1.5); and / or,

[0044] The thickness of the electroluminescent unit 100 is 35-600 nm; and / or,

[0045] The thickness of the photoluminescent unit 200 is 60-500 nm; and / or,

[0046] The thickness of the first anode 41 and the second anode 42 is 10-210 nm respectively; and / or

[0047] The thickness of the first electroluminescent layer 71 and the second electroluminescent layer 72 is 20-80 nm respectively; and / or,

[0048] The thickness of the first cathode 91 and the second cathode 92 is 5-70 nm respectively; and / or

[0049] The thickness of the photoluminescent layer 3 is 30-80 nm; and / or,

[0050] The thickness of the encapsulating layer 2 is 30-80 nm.

[0051] By reasonably allocating the thickness of each layer, the structure of the optoelectronic device is simplified, so that the total thickness T of the optoelectronic device is equal to the mth cavity length of the electroluminescent unit 100 and equal to the nth cavity length of the photoluminescent unit 200, and the electroluminescent unit 100 and the photoluminescent unit 200 can also reach the best optical intensity at the same time. The optoelectronic device has a microcavity structure inside, and the optoelectronic device can increase the light intensity of the microcavity structure by using the microcavity effect, thereby improving the light-emitting efficiency and brightness of the optoelectronic device and prolonging its service life.

[0052] It can be appreciated that the ratio of the thickness of the photoluminescent layer 3 and the encapsulation layer 2 can be any of 1.1:1, 1.2:1, 1.3:1, 1.4:1, 1.5:1, or a range formed by any two of these values. The thickness of the electroluminescent unit 100 can be any of 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, 210 nm, 220 nm, 240 nm, 260 nm, 280 nm, 300 nm, 320 nm, 340 nm, 360 nm, 380 nm, 400 nm, 420 nm, 440 nm, 460 nm, 480 nm, 500 nm, or a range formed by any two of these values. The thickness of the photoluminescent unit 200 can be any of 60 nm, 70 nm, 80 nm, 95 nm, 100 nm, 10 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, 210 nm, 220 nm, 230 nm, 240 nm, 250 nm, 260 nm, 270 nm, 280 nm, 290 nm, 300 nm, 310 nm, 320 nm, 330 nm, 340 nm, 350 nm, 360 nm, 370 nm, 380 nm, 390 nm, 400 nm, 410 nm, 420 nm, 430 nm, 440 nm, 450 nm, 460 nm, 470 nm, 480 nm, 490 nm, 500 nm, or a range formed by any two of these values. The thickness of the first anode 41 and the second anode 42 can be any of 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 105 nm, 110 nm, 115 nm, 120 nm, 125 nm, 130 nm, 135 nm, 140 nm, 145 nm, 150 nm, 155 nm, 160 nm, 165 nm, 170 nm, 175 nm, 180 nm, 185 nm, 190 nm, 195 nm, 200 nm, 205 nm, 210 nm, or a range formed by any two of these values.The thickness of the first electroluminescent layer 71 and the second electroluminescent layer 72 can be any one of 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm or a range formed by any two of them. The thickness of the first cathode 91 and the second cathode 92 can be any one of 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm or a range formed by any two of them. The thickness of the photoluminescent layer 3 can be any one of 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm or a range formed by any two of them. The thickness of the encapsulation layer 2 can be any one of 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm or a range formed by any two of them.

[0053] In one embodiment, the total thickness T of the optoelectronic device is 95-1100 nm; and / or,

[0054] The m and n are each independently an integer from 2 to 8.

[0055] The total thickness T of the optoelectronic device is ensured to be within a suitable range, the structure of the optoelectronic device is simplified, unnecessary film layers of the photoluminescent unit 200 are reduced, and the electroluminescent unit 100 and the photoluminescent unit 200 can both achieve optimal optical intensity. The optoelectronic device has a microcavity structure, and the use of microcavity effect can increase the light intensity of the microcavity structure, thereby improving the light-emitting efficiency and brightness of the optoelectronic device and prolonging its service life.

[0056] It will be appreciated that the total device thickness T of the optoelectronic device can be 95 nm, 100 nm, 105 nm, 110 nm, 115 nm, 120 nm, 125 nm, 130 nm, 135 nm, 140 nm, 145 nm, 150 nm, 155 nm, 160 nm, 165 nm, 170 nm, 175 nm, 180 nm, 185 nm, 190 nm, 195 nm, 200 nm, 205 nm, 210 nm, 215 nm, 220 nm, 225 nm, 230 nm, 235 nm, 240 nm, 245 nm, 250 nm, 255 nm, 260 nm, 265 nm, 270 nm, 275 nm, 280 nm, 285 nm, 290 nm, 295 nm, 300 nm, 305 nm, 310 nm, 315 nm, 320 nm, 325 nm, 330 nm, 335 nm, 340 nm, 345 nm, 350 nm, 355 nm, 360 nm, 365 nm, 370 nm, 375 nm, 380 nm, 385 nm, 390 nm, 395 nm, 400 nm, 405 nm, 410 nm, 415 nm, 420 nm, 425 nm, 430 nm, 435 nm, 440 nm, 445 nm, 450 nm, 455 nm, 460 nm, 465 nm, 470 nm, 475 nm, 480 nm, 485 nm, 490 nm, 495 nm, 500 nm, 505 nm, 510 nm, 515 nm, 520 nm, 525 nm, 530 nm, 535 nm, 540 nm, 545 nm, 550 nm, 555 nm, 560 nm, 565 nm, 570 nm, 575 nm, 580 nm, 585 nm, 590 nm, 595 nm, 600 nm, 605 nm, 610 nm, 615 nm, 620 nm, 625 nm, 630 nm, 635 nm, 640 nm, 645 nm, 650 nm, 655 nm, 660 nm, 665 nm, 670 nm, 675 nm, 680 nm, 685 nm, 690 nm, 695 nm, 700 nm, 705 nm, 710 nm, 715 nm, 720 nm, 725 nm, 730 nm, 735 nm, 740 nm, 745 nm, 750 nm, 755 nm, 760 nm, 765 nm, 770 nm, 775 nm, 780 nm, 785 nm, 790 nm, 795 nm, 800 nm, 805 nm, 810 nm, 815 nm, 820 nm, 825 nm, 830 nm, 835 nm, 840 nm, 845 nm, 850 nm, 855 nm, 860 nm, 865 nm, 870 nm, 875 nm, 880 nm, 885 nm, 890 nm, 895 nm, 900 nm, 905 nm, 910 nm, 915 nm, 920 nm, 925 nm, 930 nm, 935 nm, 940 nm, 945 nm, 950 nm, 955 nm, 960 nm, 965 nm, 970 nm, 975 nm, 980 nm, 985 nm, 990 nm, 995 nm, 1000 nm, 1005 nm, 1010 nm, 1015 nm, 1020 nm, 1025 nm, 1030 nm, 1035 nm, 1040 nm, 1045 nm, 1050 nm, 1055 nm, 1060 nm, 1065 nm, 1070 nm, 1075 nm, 1080 nm, 1085 nm, 1090 nm, 1095 nm, 1100 nm, 1105 nm, 1110 nm, 1115 nm, 1120 nm, 1125 nm, 1130 nm, 1135 nm, 1140 nm, 1145 nm, 1150 nm, 1155 nm, 1160 nm, 1165 nm, 1170 nm, 1175 nm, 1180 nm, 1185 nm, 1190 nm, 1195 nm, 1200 nm, 1205 nm, 1210 nm, 1215 nm, 1220 nm, 1225 nm, 1230 nm, 1235 nm, 1240 nm, 1245 nm, 1250 nm, 1255 nm, 1260 nm, 1265 nm, 1270 nm,The range formed by any one or any two of the following values: 910nm, 915nm, 920nm, 925nm, 930nm, 935nm, 940nm, 945nm, 950nm, 955nm, 960nm, 965nm, 970nm, 975nm, 980nm, 985nm, 990nm, 995nm, 1000nm, 1005nm, 1010nm, 1015nm, 1020nm, 1025nm, 1030nm, 1035nm, 1040nm, 1045nm, 1045nm, 1050nm, 1055nm, 1060nm, 1065nm, 1070nm, 1075nm, 1080nm, 1085nm, 1090nm, 1095nm, and 1100nm. The m and n are each independently selected from at least one of 2, 3, 4, 5, 6, 7, and 8.

[0057] As attached Figure 1 As shown, in one embodiment, the electroluminescent subunit further includes a first hole functional layer and a first electron functional layer; wherein the first hole functional layer is disposed between the first anode 41 and the first electroluminescent layer 71, and the first electron functional layer is disposed between the first cathode 91 and the first electroluminescent layer 71; and / or,

[0058] The material of the photoluminescent layer 3 is selected from one or more of yellow quantum dot materials, red quantum dot materials, and green quantum dot materials.

[0059] By selecting appropriate materials, the first hole functional layer can reduce the energy barrier for holes to be injected from the anode to the light-emitting layer, optimize the thickness matching of the device functional layers, increase the ability of electrons to be injected from the first cathode to the first electroluminescent layer 71, improve electron transport performance, and achieve effective recombination of electrons and holes.

[0060] As attached Figure 2 As shown, in one embodiment, the stacked electroluminescent unit further includes a second hole functional layer and a second electron functional layer; wherein the second hole functional layer is disposed between the second anode 42 and the stacked electroluminescent subunit, and the second electron functional layer is disposed between the second cathode 92 and the stacked electroluminescent subunit; and / or,

[0061] The materials of the first electroluminescent layer 71 and the second electroluminescent layer 72 are each independently selected from one or more of organic light-emitting materials and quantum dots.

[0062] Suitable materials are selected so that the second hole functional layer can reduce the energy barrier of hole injection from the anode to the light-emitting layer and can optimize the thickness matching of the device functional layer, so that the second electron functional layer can increase the ability of electron injection from the second cathode 92 to the second electroluminescent layer 72, and can improve the electron transport performance and realize the effective recombination of electrons and holes.

[0063] In one embodiment, the electroluminescent sub-unit further comprises a substrate 1; and / or,

[0064] The first anode 41, the second anode 42, the first cathode 91 and the second cathode 92 are each independently selected from one or more of a metal electrode, a silicon-carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, IGZO, MZO and AMO; and the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, IZO / Ag / IZO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, IGZO / Ag / IGZO, IGZO / Al / IGZO, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0065] In one of the embodiments, the first hole functional layer comprises a first hole injection layer 51 and / or a first hole transport layer 61, when the first hole functional layer comprises the first hole injection layer 51 and the first hole transport layer 61, the first hole transport layer 61 is arranged between the first hole injection layer 51 and the first electroluminescent layer 71; the second hole functional layer comprises a second hole injection layer 52 and / or a second hole transport layer 62, when the second hole functional layer comprises the second hole injection layer 52 and the second hole transport layer 62, the second hole transport layer 62 is arranged between the second hole injection layer 52 and the second electroluminescent layer 72; wherein the material of the first hole injection layer 51 and the material of the second hole injection layer 52 are each independently selected from one or more of HATCN, PEDOT:PSS, BTDA-TCNQ, TDA-TCNNQ, TDA-TCNAQ, MeO-TAD, m-MTDATA, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, 4,4',4"-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine], a mixture doped with 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane doped N,N'-diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, a transition metal oxide selected from one or more of NiO, MoO2, MoO3, WO3 and CuO, and a transition metal chalcogenide selected from one or more of MoS2, MoSe2, WS3, WSe3 and CuS.

[0066] In one of the embodiments, the thickness of the first hole injection layer 51 and the second hole injection layer 52 is 30-150 nm respectively; and / or,

[0067] The thickness of the first hole transport layer 61 and the second hole transport layer 62 is 30-120 nm respectively.

[0068] In one of the embodiments, the material of the first hole transport layer 61 and the material of the second hole transport layer 62 are each independently selected from one or more of a polymeric hole transport material and a small molecule hole transport material; the polymeric hole transport material is selected from one or more of poly(N-vinylcarbazole), poly[bis(4-phenyl)(4-butylphenyl)amine], and poly[(9,9-di-n- octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)-diphenylamine)]; the small molecule hole transport material is selected from one or more of 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)benzenamine], and 4,4'-bis(9-carbazol) biphenyl.

[0069] In one embodiment, the material of the first electroluminescent layer 71 and the material of the second electroluminescent layer 72 are each independently selected from one or more of an organic luminescent material and a quantum dot; the organic luminescent material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine complex of iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine complex of iridium, diaryl anthracene derivative, stilbene aromatic derivative, pyrene derivative, fluorene derivative, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescent material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid localized charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; the quantum dot includes one or more of a single component quantum dot, a core-shell quantum dot including one or more shells, an inorganic perovskite quantum dot, an organic perovskite quantum dot, and an organic-inorganic hybrid perovskite quantum dot, the material of the single component quantum dot, the material of the core of the core-shell quantum dot, and the material of the shell of the core-shell quantum dot are each independently selected from at least one of a II-VI compound, a III-VI compound, a III-V compound, a IV-VI compound, or a I-III-VI compound, wherein the II-VI compound is selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe.the III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, the IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, the I-III-VI compound is selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2, the inorganic perovskite quantum dot has a general structure of QJT3, the organic-inorganic hybrid perovskite quantum dot has a general structure of GJT3, and the organic perovskite quantum dot has a general structure of LJT3, J is a divalent metal cation, J is independently selected at each occurrence from one or more of Pb2+, Sn2+, Cu2+, Ni2+, Cd2+, Cr2+, Mn2+, Co2+, Fe2+, Ge2+, Yb2+, and Eu2+, T is independently selected at each occurrence from one or more of Cl-, Br-, and I-, Q is Cs+, G is selected from CH3(CH2)n-2NH3+ or [NH3(CH2)nNH3]2+, n≥2, and L is selected from formamidinium.

[0070] In one embodiment, the first electroluminescent layer 71 and the second electroluminescent layer 72 are each a blue light emitting layer comprising at least one of an organic blue light emitting material and an inorganic blue light emitting material.

[0071] In one embodiment, the first electronic functional layer includes a first electron injection layer and / or a first electron transport layer 81. When the first electronic functional layer includes a first electron injection layer and a first electron transport layer 81, the first electron transport layer 81 is disposed between the first electron injection layer and the first electroluminescent layer 71. The second electronic functional layer includes a second electron injection layer and / or a second electron transport layer 82. When the second electronic functional layer includes a second electron injection layer and a second electron transport layer 82, the second electron transport layer 82 is disposed between the second electron injection layer and the second electroluminescent layer 72. The materials of the first electron transport layer 81 and the second electron transport layer 82 are each independently selected from tris(8-hydroxyquinoline)aluminum, diphenyl[4-(triphenylsilyl)phenyl]oxyphosphine, 1,3,5-tris( 3-Pyridyl-3-phenyl)benzene, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 2,7-bis(diphenyloxyphosphine)-9,9'-spirodifluorene, 1,3,5-tris(1-phenyl-1H-benzene) The material of the first electron injection layer and the material of the second electron injection layer are each independently selected from at least one of Yb, yttrium fluoride, Li, LiF, NaF, CeF, CsCO3, Cs, KBH4, or KH; and / or,

[0072] The thicknesses of the first electron transport layer 81 and the second electron transport layer 82 are 30–120 nm, respectively.

[0073] In one embodiment, the material of the encapsulation layer 2 is selected from one or more of Al2O3, SiN, and SiO.

[0074] Choosing suitable materials ensures that the substrate 1 provides excellent support and fixation, reduces absorption of visible light, and enhances heat dissipation. The first anode 41, second anode 42, first cathode 91, and second cathode 92 possess high conductivity, good chemical stability, and good contact with other layers of the device. The first hole injection layer 51 reduces the energy barrier for hole injection from the anode to the first electroluminescent layer 71. The second hole injection layer 52 also reduces the energy barrier for hole injection from the anode to the second electroluminescent layer 72. The first hole transport layer 61 and the second hole transport layer 62 optimize the thickness matching of the device's functional layers. The first and second electron injection layers increase the ability of electrons to be injected from the cathode to the light-emitting layer. The first and second electron transport layers 81 and 82 improve electron transport performance and achieve effective recombination of electrons and holes. The encapsulation layer 2 blocks water and oxygen, protecting the organic materials and metal electrodes in the optoelectronic device from corrosion by water vapor and oxygen in the air, thereby extending the device's lifespan.

[0075] Furthermore, the substrate 1 is selected from one or more of rigid substrates and flexible substrates; wherein, the material of the rigid substrate is selected from at least one of glass and plastic; and the material of the flexible substrate is selected from at least one of polyimide (PI), polyetherimide (PEI), polyphenylene sulfide (PPS), and polyarylate (PAR).

[0076] It is understood that the thickness of the first hole injection layer 51 and the second hole injection layer 52 can be any value or any two values ​​of 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, 105nm, 110nm, 115nm, 120nm, 125nm, 130nm, 135nm, 140nm, 145nm, and 150nm. The thicknesses of the first hole transport layer 61 and the second hole transport layer 62 can be any value or any two values ​​formed by the following ranges: 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, 105nm, 110nm, 115nm, and 120nm. The thicknesses of the first electron transport layer 81 and the second electron transport layer 82 can be any value or any two values ​​formed by the following ranges: 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, 105nm, 110nm, 115nm, and 120nm.

[0077] In one embodiment, when the first anode 41 is the composite electrode, the cavity length of the electroluminescent unit 100 is measured from the metal oxide electrode of the third layer in the composite electrode and truncated to the first cathode 91; and / or,

[0078] When the second anode 42 is the composite electrode, the cavity length of the electroluminescent unit 100 is measured from the metal oxide electrode of the third layer in the composite electrode and truncated to the second cathode 92; and / or,

[0079] The transmittance of the first anode 41 is greater than 90%; and / or,

[0080] The transmittance of the second anode 42 is greater than 90%; and / or.

[0081] Since the first anode 41 or the second anode 42 is selected from the composite electrode, and the second layer of the composite electrode is a reflective surface, the cavity length of the electroluminescent unit 100 is measured from the metal oxide electrode of the third layer in the composite electrode. This results in a microcavity structure inside the optoelectronic device. The optoelectronic device utilizes the microcavity effect to increase the light intensity of the emitted wavelength, thereby improving the luminous efficiency and brightness of the optoelectronic device and extending its lifespan. The high transmittance of the first anode 41 and the second anode 42 helps improve the brightness and efficiency of the device and maintain color purity. Simultaneously, the high transmittance of the electrodes reduces light scattering and absorption, further improving light extraction efficiency. Furthermore, the high transmittance of the first anode 41 and the second anode 42 also helps optimize the microcavity effect, increase luminous intensity, and reduce the blue shift in the EL spectrum caused by the microcavity effect.

[0082] Furthermore, when the first anode 41 and the second anode 42 are each independently selected from the IZO / Ag / IZO in the composite electrode, and the thicknesses of IZO / Ag / IZO are 10nm, 110nm, and 75nm respectively, since IZO is a transparent metal oxide and does not reflect light, the second layer in the composite electrode, i.e., Ag, is the reflective surface. Therefore, the cavity length of the electroluminescent unit 100 is measured from the third layer of IZO in the composite electrode (i.e., the electrode closest to the first hole functional layer or the second hole functional layer), as shown in the appendix. Figure 1 As shown, the cavity length of the electroluminescent unit 100 is equal to the sum of the thicknesses of the third layer metal oxide electrode, the first hole injection layer 51, the first hole transport layer 61, the first electroluminescent layer 71, the first electron transport layer 81, the first cathode 91, and the photoluminescent unit 200 in the composite electrode. (See attached diagram) Figure 2As shown, or the cavity length of the electroluminescent unit 100 is equal to the sum of the thicknesses of the third metal oxide electrode, the second hole injection layer 52, the second hole transport layer 62, all the second electroluminescent layers 72, all the connecting layers 73, the second electron transport layer 82, the second cathode 92, and the photoluminescent unit 200 in the composite electrode.

[0083] Furthermore, when calculating the peak position in the optical simulation results, if the first anode 41 or the second anode 42 is the composite electrode and an IZO substrate is used, then the first peak is the length of the second cavity, and so on, the Nth peak is the length of the N+1th cavity.

[0084] In one embodiment, the emission peak of the material of the first electroluminescent layer 71 is 450-480 nm; and / or,

[0085] The emission peak of the material of the second electroluminescent layer 72 is 450–480 nm; and / or,

[0086] The emission peak of the yellow quantum dot material is 620-640 nm; and / or,

[0087] The emission peak of the red quantum dot material is 560-590 nm; and / or,

[0088] The emission peak of the green quantum dot material is 530-550 nm.

[0089] By selecting the appropriate emission peak position and precisely controlling the size of quantum dots, emission at a specific wavelength can be achieved, thereby obtaining high-purity colors, avoiding color distortion, improving color saturation, reducing energy loss, and increasing luminous efficiency and lifespan.

[0090] In one embodiment, the yellow quantum dot material, red quantum dot material, and green quantum dot material are each independently selected from at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot are respectively selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, and Cd. One or more of the following compounds: SeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; and group IV-VI compounds, including but not limited to SnS and SnSe. One or more of SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and III-V group compounds including but not limited to GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, One or more of AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and group I-III-VI compounds including but not limited to at least one or more of CuInS2, CuInSe2, and AgInS2.

[0091] By selecting suitable quantum dot materials and precisely controlling the size of the quantum dots, it is possible to achieve light emission at specific wavelengths, thereby obtaining high-purity colors, avoiding color distortion, improving color saturation, reducing energy loss, and increasing luminous efficiency and lifespan.

[0092] It is understood that the emission peak positions of the first electroluminescent layer 71 and the second electroluminescent layer 72 are respectively within the range formed by any one or any two of the following values: 450nm, 451nm, 452nm, 453nm, 454nm, 455nm, 456nm, 457nm, 458nm, 459nm, 460nm, 461nm, 462nm, 463nm, 464nm, 465nm, 466nm, 467nm, 468nm, 469nm, 470nm, 471nm, 472nm, 473nm, 474nm, 475nm, 476nm, 477nm, 478nm, 479nm, and 480nm. The emission peak position of the yellow quantum dot material is any value or any two values ​​of 620nm, 621nm, 622nm, 623nm, 624nm, 625nm, 626nm, 627nm, 628nm, 629nm, 630nm, 631nm, 632nm, 633nm, 634nm, 635nm, 636nm, 637nm, 638nm, 639nm, and 640nm. The emission peak position of the red quantum dot material is any one or any two of the following values: 560nm, 561nm, 562nm, 563nm, 564nm, 565nm, 566nm, 567nm, 568nm, 569nm, 570nm, 571nm, 572nm, 573nm, 574nm, 575nm, 576nm, 577nm, 578nm, 579nm, 580nm, 581nm, 582nm, 583nm, 584nm, 585nm, 586nm, 587nm, 588nm, 589nm, and 590nm. The emission peak position of the green quantum dot material is any value or any two values ​​of 530nm, 531nm, 532nm, 533nm, 534nm, 535nm, 536nm, 537nm, 538nm, 539nm, 540nm, 541nm, 542nm, 543nm, 544nm, 545nm, 546nm, 547nm, 548nm, 549nm, and 550nm.

[0093] In one embodiment, the optoelectronic device further includes a reflective layer 10 disposed on the side of the photoluminescent unit 200 away from the electroluminescent unit 100, the thickness of the reflective layer 10 being 10–40 nm.

[0094] The reflective layer 10 can block water and oxygen, protecting the organic materials and metal electrodes in the optoelectronic device from corrosion by water vapor and oxygen in the air, thereby extending the service life of the device.

[0095] It is understood that the thickness of the reflective layer 10 is within the range of any one or any two values ​​of 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm, 30nm, 31nm, 32nm, 33nm, 34nm, 35nm, 36nm, 37nm, 38nm, 39nm, and 40nm.

[0096] In one embodiment, the material of the reflective layer 10 is selected from one or more of metallic materials, silicon-carbon materials, doped or undoped metal oxide materials, and composite materials; wherein, the metallic material is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the silicon-carbon material is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fibers; and the doped or undoped metal oxide material is selected from ITO, FTO, ATO, AZO, GZO, IZO, IGZO, and M The composite material is selected from at least one of ZO and AMO; the composite material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, IZO / Ag / IZO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, IGZO / Ag / IGZO, IGZO / Al / IGZO, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0097] The reflective layer 10 can block water and oxygen, protecting the organic materials and metal electrodes in the optoelectronic device from corrosion by water vapor and oxygen in the air, thereby extending the service life of the device.

[0098] Furthermore, the reflective layer 10 and the photoluminescent sub-unit 20 also include an encapsulation layer 2, which further blocks water and oxygen, protecting the organic materials and metal electrodes in the optoelectronic device from corrosion by water vapor and oxygen in the air, thereby extending the service life of the device.

[0099] Furthermore, the total thickness T of the optoelectronic device does not include the thickness of the substrate 1 and the reflective layer 10. Simultaneously, when the first anode 41 is the composite electrode, the cavity length of the electroluminescent unit is measured from the metal oxide electrode of the third layer in the composite electrode and truncated to the first cathode 91, as shown in the attached figure. Figure 1As shown, the total thickness T of the optoelectronic device is equal to the sum of the thickness of the third layer of the composite electrode (metal oxide electrode) to the first cathode 91 and the thickness of the photoluminescent unit 200. (See attached diagram) Figure 2 As shown, or when the second anode 42 is the composite electrode, the cavity length of the electroluminescent unit is measured from the third layer of the metal oxide electrode in the composite electrode and cut off to the second cathode 92. That is, the total thickness T of the optoelectronic device is equal to the sum of the thickness of the third layer of the metal oxide electrode in the composite electrode to the second cathode 92 and the thickness of the photoluminescent unit 200.

[0100] Furthermore, the electroluminescent unit 100 is fabricated using a solution method, and the photoluminescent unit 200 is fabricated using an atomic layer deposition method.

[0101] Solution methods help reduce costs and enable large-area manufacturing, thus lowering overall production costs, while atomic layer deposition provides precise control and high uniformity. Combining these two methods gives QD-OLED devices an advantage in both performance and cost-effectiveness.

[0102] This application also provides a display device that adopts the following technical solution:

[0103] The display device includes the optoelectronic device.

[0104] This application reduces the total thickness of the optoelectronic device by making the total thickness T of the optoelectronic device equal to the length of the m-th cavity of the electroluminescent unit 100 and equal to the length of the n-th cavity of the photoluminescent unit 200. At the same time, it enables the optoelectronic device to utilize the microcavity effect, thereby improving the luminous efficiency and brightness of the optoelectronic device and extending its service life.

[0105] The following specific embodiments will be used to illustrate the thin film of this application. These embodiments are only some of the embodiments of this application and are not intended to limit this application.

[0106] Example 1

[0107] The optoelectronic device includes a substrate, an electroluminescent unit, and a photoluminescent unit stacked sequentially. The photoluminescent unit includes at least one light-emitting subunit, and the light-emitting subunit includes a photoluminescent layer and an encapsulation layer stacked together.

[0108] The electroluminescent unit is configured as a single-layer blue OLED, the photoluminescent layer is made of red quantum dot material, and the blue OLED includes a first anode, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer and a cathode stacked in sequence to form an RQD-OLED device.

[0109] In simulating a blue OLED, the thickness of the electroluminescent layer was fixed at 30 nm, and the thickness of the electron transport layer was fixed at 50 nm. By changing the thickness of the hole injection layer, optoelectronic devices with different total thicknesses were formed. Optical simulations were then performed on these optoelectronic devices with different total thicknesses, and the results are shown in the appendix. Figure 3 As shown.

[0110] In simulating RQD, the thickness of the photoluminescent layer was fixed at 30 nm, and the thickness of the electron transport layer was fixed at 50 nm. By changing the thickness of the hole injection layer, optoelectronic devices with different total thicknesses were formed. Optical simulations were then performed on the optoelectronic devices with different total thicknesses, and the results are shown in the appendix. Figure 4 As shown.

[0111] The thickness values ​​of the hole injection layer in the simulated blue OLED and simulated RQD, as well as the total thickness of the optoelectronic device, were statistically analyzed, and the results are as follows:

[0112] Table 1

[0113]

[0114] Combined with appendix Figure 3 To be continued Figure 4 As shown in Table 1, the cavity length of the fourth node of the blue OLED is the same as that of the third node of the RQD, both being 490nm. The cavity length of the eighth node of the blue OLED is the same as that of the sixth node of the RQD, both being 1030nm. Furthermore, both the blue OLED and RQD achieve their strongest optical intensity at cavity lengths of 490nm and 1030nm, respectively.

[0115] The total thickness T of the aforementioned optoelectronic device is less than 1 μm. In this embodiment, the cavity length of the 4th node of the blue OLED and the cavity length of the 3rd node of the RQD are used, that is, the total thickness T of the optoelectronic device is controlled at 490 nm; that is, m = 4, n = 3.

[0116] The structure of the optoelectronic device described in Example 1 is as follows:

[0117] In this embodiment, a glass substrate is used to fabricate and pattern a reflective anode on the glass substrate. The reflective anode structure is IZO / Ag / IZO with a thickness of 10nm / 110nm / 75nm.

[0118] An OLED hole injection layer with a thickness of 40 nm was fabricated on a reflective anode.

[0119] A hole transport layer with a thickness of 45 nm was fabricated on the hole injection layer;

[0120] An organic blue emitting layer with a thickness of 30 nm was prepared on the hole transport layer; the emission peak position was 456 nm.

[0121] An electron transport layer with a thickness of 50 nm was fabricated on an organic blue emitting layer.

[0122] A transparent cathode is fabricated on the electron transport layer. In this embodiment, a double-layer structure is adopted. First, a 7 nm thick Mg / Ag alloy is prepared, and then a 33 nm thick IZO is prepared.

[0123] An Al2O3 inorganic encapsulation layer with a thickness of 40 nm was prepared on a transparent cathode using ALD.

[0124] An RQD layer with a thickness of 40 nm and an emission peak position of 626 nm was prepared on the inorganic encapsulation layer.

[0125] An Al2O3 inorganic encapsulation layer with a thickness of 40nm is used on the RQD layer;

[0126] An RQD layer with a thickness of 40 nm and an emission peak position of 626 nm was prepared on the inorganic encapsulation layer.

[0127] An Al2O3 inorganic encapsulation layer with a thickness of 50 nm is used on the RQD layer;

[0128] A semi-transparent and semi-reflective film layer with a thickness of 15 nm was prepared on the inorganic encapsulation layer;

[0129] The RQD-OLED device is then repackaged.

[0130] The total thickness T of the optoelectronic device is equal to the sum of the thicknesses of the third layer metal oxide electrode, hole injection layer, hole transport layer, electroluminescent layer, electron transport layer, cathode and photoluminescent unit in the composite electrode, that is, the total thickness T of the optoelectronic device = 75nm + 40nm + 45nm + 30nm + 50nm + 7nm + 33nm + 40nm + 40nm + 40nm + 40nm + 50nm = 490nm.

[0131] Example 2

[0132] The optoelectronic device includes a substrate, an electroluminescent unit, and a photoluminescent unit stacked sequentially. The photoluminescent unit includes at least one light-emitting subunit, and the light-emitting subunit includes a photoluminescent layer and an encapsulation layer stacked together.

[0133] The electroluminescent unit is configured as a single-layer blue OLED, and the material of the photoluminescent layer is selected from green quantum dot materials. The single-layer blue OLED includes a first anode, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer and a cathode stacked in sequence to form a GQD-OLED device.

[0134] In simulating a single-layer blue OLED, the thickness of the electroluminescent layer was fixed at 30 nm, and the thickness of the electron transport layer was fixed at 50 nm. By changing the thickness of the hole injection layer, optoelectronic devices with different total thicknesses were formed. Optical simulations were then performed on these optoelectronic devices with different total thicknesses, and the results are shown in the appendix. Figure 5 As shown.

[0135] In simulating GQD, the thickness of the photoluminescent layer was fixed at 30 nm, and the thickness of the electron transport layer was fixed at 50 nm. By changing the thickness of the hole injection layer, optoelectronic devices with different total thicknesses were formed. Optical simulations were then performed on the optoelectronic devices with different total thicknesses, and the results are shown in the appendix. Figure 6 As shown.

[0136] The thickness values ​​of the hole injection layer in the simulated single-layer blue OLED and the simulated GQD, as well as the total thickness of the optoelectronic device, were statistically analyzed, and the results are as follows:

[0137] Table 2

[0138]

[0139] Combined with appendix Figure 5 To be continued Figure 6 As can be seen from Table 2, the cavity length of the 7th node of the single-layer blue OLED is the same as that of the 6th node of the GQD, both being 895nm. At the same time, when the cavity length is 895nm, the optical intensity of both the single-layer blue OLED and the GQD reaches its maximum.

[0140] The total thickness T of the optoelectronic device is less than 1 μm. In this embodiment, the cavity length of the 7th node of a single-layer blue OLED and the cavity length of the 6th node of a GQD are used, that is, the total thickness T of the optoelectronic device is controlled at 895 nm; that is, m = 7, n = 6.

[0141] The structure of the optoelectronic device described in Example 2 is as follows:

[0142] In this embodiment, a glass substrate is used to fabricate and pattern a reflective anode on the glass substrate. The reflective anode structure is IZO / Ag / IZO with a thickness of 10nm / 110nm / 75nm.

[0143] An OLED hole injection layer with a thickness of 135 nm was fabricated on a reflective anode.

[0144] A hole transport layer with a thickness of 90 nm was fabricated on the hole injection layer;

[0145] An organic blue emitting layer with a thickness of 60 nm was prepared on the hole transport layer; the emission peak position was 456 nm.

[0146] An electron transport layer with a thickness of 80 nm was fabricated on an organic blue emitting layer.

[0147] A transparent cathode is fabricated on the electron transport layer. In this embodiment, a double-layer structure is adopted. First, a 7 nm thick Mg / Ag alloy is prepared, and then a 33 nm thick IZO is prepared.

[0148] An Al2O3 inorganic encapsulation layer with a thickness of 50 nm was prepared on a transparent cathode using ALD.

[0149] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0150] A layer of Al2O3 inorganic encapsulation layer with a thickness of 45nm is used on the GQD layer;

[0151] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0152] A layer of Al2O3 inorganic encapsulation layer with a thickness of 45nm is used on the GQD layer;

[0153] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0154] A layer of Al2O3 inorganic encapsulation layer with a thickness of 45nm is used on the GQD layer;

[0155] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0156] A layer of Al2O3 inorganic encapsulation layer with a thickness of 50nm is used on the GQD layer;

[0157] A semi-transparent and semi-reflective film layer with a thickness of 15 nm was prepared on the inorganic encapsulation layer;

[0158] The device is then repackaged to obtain a GQD-OLED device.

[0159] The total thickness T of the optoelectronic device is equal to the sum of the thicknesses of the third layer of the composite electrode, the metal oxide electrode, the hole injection layer, the hole transport layer, the electroluminescent layer, the electron transport layer, the cathode, and the photoluminescent unit. That is, the total thickness T of the optoelectronic device is 75nm + 135nm + 90nm + 60nm + 80nm + 7nm + 33nm + 50nm + 45nm + 45nm + 45nm + 45nm + 45nm + 45nm + 45nm + 50nm = 895nm.

[0160] Example 3

[0161] The optoelectronic device includes a substrate, an electroluminescent unit, and a photoluminescent unit stacked sequentially. The photoluminescent unit includes at least one light-emitting subunit, and the light-emitting subunit includes a photoluminescent layer and an encapsulation layer stacked together.

[0162] The electroluminescent unit is configured as a stacked blue OLED, and the material of the photoluminescent layer is selected from green quantum dot materials. The stacked blue OLED includes a first anode, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer, a cathode, a charge generation layer, a first anode, a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer, and a cathode stacked in sequence to form a GQD-OLED device.

[0163] In simulating a stacked blue OLED, the thickness of the electroluminescent layer was fixed at 30 nm, and the thickness of the electron transport layer was fixed at 50 nm. By changing the thickness of the hole injection layer, optoelectronic devices with different total thicknesses were formed. Optical simulations were then performed on these optoelectronic devices with different total thicknesses, and the results are shown in the appendix. Figure 7 As shown.

[0164] In simulating GQD, the thickness of the photoluminescent layer was fixed at 30 nm, and the thickness of the electron transport layer was fixed at 50 nm. By changing the thickness of the hole injection layer, optoelectronic devices with different total thicknesses were formed. Optical simulations were then performed on the optoelectronic devices with different total thicknesses, and the results are shown in the appendix. Figure 8 As shown.

[0165] The thickness values ​​of the hole injection layer in the simulated stacked blue OLED and the simulated GQD, as well as the total thickness of the optoelectronic device, were statistically analyzed, and the results are as follows:

[0166] Table 3

[0167]

[0168] Combined with appendix Figure 7 To be continued Figure 8As can be seen from Table 3, the cavity length of the 7th node of the stacked blue OLED is the same as that of the 6th node of the GQD, both being 895nm. At the same time, the optical intensity of the stacked blue OLED and the GQD reaches its maximum when the cavity length is 895nm.

[0169] The total thickness T of the aforementioned optoelectronic device is less than 1 μm. In this embodiment, the cavity length of the 7th node of the stacked blue OLED and the cavity length of the 6th node of the GQD are used, thus controlling the total thickness T of the optoelectronic device to be 895 nm; that is, m = 7 and n = 6.

[0170] The structure of the optoelectronic device described in Example 3 is as follows:

[0171] In this embodiment, a glass substrate is used to fabricate and pattern a reflective anode on the glass substrate. The reflective anode structure is IZO / Ag / IZO with a thickness of 10nm / 110nm / 75nm.

[0172] An OLED hole injection layer with a thickness of 60 nm was fabricated on a reflective anode.

[0173] A hole transport layer with a thickness of 40 nm was fabricated on the hole injection layer;

[0174] An organic blue emitting layer with a thickness of 30 nm and an emission peak position of 456 nm was prepared on the hole transport layer.

[0175] An electron transport layer with a thickness of 40 nm was fabricated on an organic blue emitting layer.

[0176] A charge generation layer with a thickness of 25 nm was fabricated on the electron transport layer;

[0177] A hole injection layer with a thickness of 60 nm was prepared on the charge generation layer;

[0178] A hole transport layer with a thickness of 40 nm was fabricated on the hole injection layer;

[0179] An organic blue emitting layer is prepared on the hole transport layer. In principle, common OLED organic blue emitting materials can be used in this embodiment. The thickness is 30nm and the emission peak position is 456nm.

[0180] An electron transport layer with a thickness of 40 nm was fabricated on an organic blue emitting layer.

[0181] A transparent cathode is fabricated on the electron transport layer. In this embodiment, a double-layer structure is adopted. First, a 7 nm thick Mg / Ag alloy is prepared, and then a 33 nm thick IZO is prepared.

[0182] An Al2O3 inorganic encapsulation layer with a thickness of 50 nm was prepared on a transparent cathode using ALD.

[0183] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0184] A layer of Al2O3 inorganic encapsulation layer with a thickness of 45nm is used on the GQD layer;

[0185] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0186] A layer of Al2O3 inorganic encapsulation layer with a thickness of 45nm is used on the GQD layer;

[0187] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0188] A layer of Al2O3 inorganic encapsulation layer with a thickness of 45nm is used on the GQD layer;

[0189] A GQD layer with a thickness of 45 nm and an emission peak position of 541 nm was prepared on the inorganic encapsulation layer.

[0190] A layer of Al2O3 inorganic encapsulation layer with a thickness of 50nm is used on the GQD layer;

[0191] A semi-transparent and semi-reflective film layer with a thickness of 15 nm was prepared on the inorganic encapsulation layer;

[0192] The QD-OLED device is then repackaged.

[0193] The total thickness T of the optoelectronic device is equal to the sum of the thicknesses of the third layer of the composite electrode, the metal oxide electrode, the hole injection layer, the hole transport layer, the electroluminescent layer, the electron transport layer, the cathode, and the photoluminescent unit. That is, the total thickness T of the optoelectronic device is 75nm + 60nm + 40nm + 30nm + 40nm + 25nm + 60nm + 40nm + 30nm + 40nm + 7nm + 33nm + 50nm + 45nm + 45nm + 45nm + 45nm + 45nm + 45nm + 50nm = 895nm.

[0194] Comparative Example 1

[0195] The structure of the optoelectronic device in Comparative Example 1 is as follows:

[0196] A schematic diagram of a QD-OLED device is attached. Figure 9 As shown: From bottom to top, the components are arranged as follows: substrate, blue OLED section, and photoluminescent QD light-emitting section.

[0197] In this comparative example, a glass substrate was used to fabricate and pattern a reflective anode on the glass substrate. The reflective anode structure was IZO / Ag / IZO with a thickness of 10nm / 110nm / 75nm.

[0198] An OLED hole injection layer is fabricated on the reflective anode. In principle, common OLED hole injection materials can be used in this embodiment, with a thickness of 40nm.

[0199] A hole transport layer is fabricated on the hole injection layer. In principle, common OLED hole transport materials can be used in this embodiment, with a thickness of 45nm.

[0200] An organic blue emitting layer is fabricated on the hole transport layer. In principle, common OLED organic blue emitting materials can be used in this embodiment. The thickness is 30 nm and the emission peak position is 456 nm.

[0201] An electron transport layer is fabricated on the organic blue emitting layer. In principle, common OLED electron transport materials can be used in this embodiment, with a thickness of 50 nm.

[0202] A transparent cathode is fabricated on the electron transport layer. In this embodiment, a double-layer structure is adopted. First, a 7 nm thick Mg / Ag alloy is prepared, and then a 33 nm thick IZO is prepared.

[0203] An inorganic encapsulation layer was fabricated on a transparent cathode using CVD. The inorganic layer had a SIN / SION structure with a thickness of 500 nm / 500 nm and a total thickness of 1 μm.

[0204] An organic encapsulation layer was prepared on the inorganic encapsulation layer using TFE. The material was a transparent polymer film with a thickness of 12 μm.

[0205] An inorganic encapsulation layer is then fabricated on the organic encapsulation layer. The inorganic layer has a SIN / SION structure, a thickness of 500nm / 500nm, and a total thickness of 1µm.

[0206] An RQD layer with a thickness of 40 nm and an emission peak position of 626 nm was prepared on the inorganic encapsulation layer.

[0207] An inorganic encapsulation layer was fabricated on the RQD layer using CVD. The inorganic layer structure was SIN / SION, with a thickness of 500nm / 500nm and a total thickness of 1µm.

[0208] An organic encapsulation layer was prepared on the inorganic encapsulation layer using TFE. The material was a transparent polymer film with a thickness of 12 μm.

[0209] An inorganic encapsulation layer is then prepared on the organic encapsulation layer using CVD. The inorganic layer has a SIN / SION structure with a thickness of 500nm / 500nm and a total thickness of 1µm.

[0210] Comparative Example 1 shows that the total thickness of a traditional QD-OLED device reaches 6720nm, which makes it impossible to realize a microcavity structure. Without considering or utilizing the microcavity effect, it is impossible to achieve high optical intensity. Traditional QD-OLED devices have low luminous efficiency and brightness, and short lifespan.

[0211] As can be seen from Examples 1-3 and Comparative Example 1, Comparative Example 1 is a traditional QD-OLED device with a total thickness of 6720nm, which cannot realize a microcavity structure. Examples 1-3 fix the thickness of the electroluminescent layer and the electron transport layer, and change the thickness of the hole injection layer using a single variable. Of course, one or more of the hole injection layer, hole transport layer, electroluminescent layer, and electron transport layer can be fixed, and another layer can be selected as a single variable. At the same time, by simulating blue OLED and RQD, the optical intensity of blue OLED and RQD is selected to reach the strongest simultaneously, and the cavity length of the m-th segment of the electroluminescent unit is equal to the photoluminescence... The cavity length of the nth cavity of the optical unit is used as the total thickness T of the optoelectronic device. By utilizing the top-emission microcavity effect and considering two microcavity effects simultaneously in the same device, the luminescence of the electroluminescent unit 100 and the luminescence of the photoluminescent unit 200 are enhanced, thereby improving the luminous efficiency and brightness of the entire device. By rationally allocating the thickness of each layer, the structure of the optoelectronic device is simplified, and unnecessary film layers of the photoluminescent unit are reduced, thereby forming a microcavity structure inside the optoelectronic device. The optoelectronic device utilizes the microcavity effect to increase the light intensity of the emitted wavelength of the microcavity structure, thereby improving the luminous efficiency and brightness of the optoelectronic device and extending its service life.

[0212] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. An optoelectronic device, characterized in that, It includes electroluminescent units and photoluminescent units stacked together; Wherein, the total thickness T of the optoelectronic device is equal to the length of the m-th cavity of the electroluminescent unit and equal to the length of the n-th cavity of the photoluminescent unit, where m and n are both integers greater than 1.

2. The optoelectronic device according to claim 1, characterized in that, The ratio of the thickness of the electroluminescent unit to the thickness of the photoluminescent unit is (1:1) to (2:1).

3. The optoelectronic device according to claim 1, characterized in that, The photoluminescent unit includes at least one photoluminescent subunit, the photoluminescent subunit including a stacked encapsulation layer and a photoluminescent layer, the encapsulation layer being disposed between the electroluminescent unit and the photoluminescent layer; and / or The electroluminescent unit includes at least one electroluminescent subunit or at least one stacked electroluminescent unit; The electroluminescent subunit includes a first anode, a first electroluminescent layer, and a first cathode stacked together. The stacked electroluminescent unit includes a second anode, a stacked electroluminescent subunit, and a second cathode stacked together; wherein, the stacked electroluminescent subunit includes at least two second electroluminescent layers and a connecting layer disposed between the two second electroluminescent layers.

4. The optoelectronic device according to claim 3, characterized in that, In one of the photoluminescent subunits, the thickness ratio of the photoluminescent layer to the encapsulation layer is (1.5:1) to (1:1.5); and / or, The thickness of the electroluminescent unit is 35–600 nm; and / or, The thickness of the photoluminescent unit is 60–500 nm; and / or, The thicknesses of the first anode and the second anode are 10–210 nm, respectively; and / or, The thicknesses of the first electroluminescent layer and the second electroluminescent layer are 20–80 nm, respectively; and / or, The thicknesses of the first cathode and the second cathode are 5–70 nm, respectively; and / or The thickness of the photoluminescent layer is 30–80 nm; and / or, The thickness of the encapsulation layer is 30–80 nm.

5. The optoelectronic device according to claim 4, characterized in that, The total thickness T of the optoelectronic device is 95–1100 nm; and / or, The m and n are each independently selected from integers from 2 to 8.

6. The optoelectronic device according to claim 3, characterized in that, The electroluminescent subunit further includes a first hole functional layer and a first electron functional layer; wherein the first hole functional layer is disposed between the first anode and the first electroluminescent layer, and the first electron functional layer is disposed between the first cathode and the first electroluminescent layer; and / or, The material of the photoluminescent layer is selected from one or more of yellow quantum dot materials, red quantum dot materials, and green quantum dot materials.

7. The optoelectronic device according to claim 3, characterized in that, The stacked electroluminescent unit further includes a second hole functional layer and a second electron functional layer; wherein the second hole functional layer is disposed between the second anode and the stacked electroluminescent subunit, and the second electron functional layer is disposed between the second cathode and the stacked electroluminescent subunit; and / or, The materials of the first electroluminescent layer and the second electroluminescent layer are each independently selected from one or more of organic light-emitting materials and quantum dots.

8. The optoelectronic device according to claim 6, characterized in that, The emission peak of the material in the first electroluminescent layer is 450–480 nm; and / or, The emission peak of the material in the second electroluminescent layer is 450–480 nm; and / or, The emission peak of the yellow quantum dot material is 620–640 nm; and / or, The emission peak of the red quantum dot material is located at 560–590 nm; and / or, The emission peak of the green quantum dot material is 530–550 nm.

9. The optoelectronic device according to any one of claims 1 to 8, characterized in that, The optoelectronic device further includes a reflective layer disposed on the side of the photoluminescent unit away from the electroluminescent unit, the thickness of the reflective layer being 10–40 nm.

10. A display device, characterized in that, The display device includes the optoelectronic device as described in any one of claims 1 to 9.

Images