Wavelength conversion assembly and lighting equipment
By introducing a combination of a support component, a first wavelength conversion layer, and a second wavelength conversion layer into a laser lighting device, and utilizing red fluorescent particles to convert the laser to improve the color rendering index, the problem of insufficient color rendering index in the prior art is solved, and a high color rendering index laser lighting effect is achieved.
Patent Information
- Application Number
- CN202520702854.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-14
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2035-04-14
AI Technical Summary
The lack of a red light band in existing laser lighting technologies results in a low color rendering index, which cannot meet the application scenarios requiring a high color rendering index.
A wavelength conversion assembly including a support, a first wavelength conversion layer, and a second wavelength conversion layer is adopted. The first wavelength conversion layer includes a carrier portion and a protrusion portion. The second wavelength conversion layer is wrapped around the outer periphery of the protrusion portion and doped with red fluorescent particles. Red fluorescence is excited by a specified laser to improve the color rendering index.
By introducing red fluorescent particles, the color rendering index is significantly improved, meeting the application requirements for high color rendering index, while ensuring the excitation efficiency and thermal stability of the red fluorescent particles.
Smart Images

Figure CN223939287U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of laser lighting technology, and more specifically, to a wavelength conversion component and a lighting device. Background Technology
[0002] In the field of existing laser lighting technology, the common lighting method is to use laser to excite fluorescence. For example, using a blue laser to excite yellow fluorescence can mix them to form white light.
[0003] However, the white light obtained in this way lacks the red light band, resulting in a low color rendering index, which makes the lighting equipment unable to meet the application scenarios with a high color rendering index. Utility Model Content
[0004] This application provides a wavelength conversion component and a lighting device.
[0005] According to a first aspect of this application, embodiments of this application provide a wavelength conversion assembly, which includes a support member, a first wavelength conversion layer, and a second wavelength conversion layer. The first wavelength conversion layer includes a carrier portion and a protrusion connected to each other; the carrier portion is disposed on the support member, and on the side of the carrier portion facing away from the support member, it has an adjacent first region and a second region, the second region being surrounding the outer periphery of the first region; the protrusion is located in the first region and protrudes relative to the carrier portion. The second wavelength conversion layer is surrounding the outer periphery of the protrusion and covers the second region; wherein the second wavelength conversion layer includes red fluorescent particles.
[0006] In some possible embodiments, the ratio between the area of the first region and the area of the second region is greater than or equal to 1:8 and less than or equal to 1:3.
[0007] In some possible embodiments, the first wavelength conversion layer is a yellow fluorescent ceramic layer; or / and the second wavelength conversion layer is a fluorescent glass thin film layer.
[0008] In some possible embodiments, the second wavelength conversion layer further includes at least one of yellow fluorescent particles, green fluorescent particles, and cyan fluorescent particles.
[0009] In some possible embodiments, the wavelength conversion component further includes a reflective layer disposed between the support and the carrier.
[0010] In some possible embodiments, the wavelength conversion component further includes a beam splitter layer disposed between the second wavelength conversion layer and the carrier portion; the beam splitter layer is used to reflect red light and transmit visible light other than red light.
[0011] In some possible embodiments, the wavelength conversion component further includes an anti-reflection layer disposed on the side of the second wavelength conversion layer away from the carrier portion.
[0012] In some possible embodiments, the support includes a substrate and a solder layer; the solder layer is connected between the substrate and the carrier.
[0013] According to a second aspect of this application, embodiments of this application also provide a lighting device, which includes a laser source and the aforementioned wavelength conversion component, wherein the laser source is used to generate a specified laser. The wavelength conversion component is disposed in the optical path of the specified laser and is used to convert the specified laser into specified fluorescence, wherein the size of the first wavelength conversion layer is greater than or equal to the spot size corresponding to the specified laser.
[0014] In some possible embodiments, both the first region and the second region are located on the optical path of the specified laser, and the spot energy intensity of the specified laser in the first region is greater than that in the second region.
[0015] This application provides a wavelength conversion component and a lighting device. The wavelength conversion component includes a support member, a first wavelength conversion layer, and a second wavelength conversion layer. The first wavelength conversion layer includes a carrier portion and a protrusion connected to each other. The carrier portion is disposed on the support member, and the side of the carrier portion away from the support member has an adjacent first region and a second region. Both the first region and the second region are located on the optical path of a specified laser, and the second region is disposed around the outer periphery of the first region.
[0016] It should be noted that both the first region and the second region are suitable for being positioned on the optical path of the specified laser, and the energy intensity of the specified laser spot in the first region is greater than that in the second region. Specifically, when the specified laser irradiates the first wavelength conversion layer, a laser spot is formed. In this application, the region with higher energy intensity of the laser spot on the first wavelength conversion layer is referred to as the "first region," and the region with lower energy intensity of the laser spot on the first wavelength conversion layer is referred to as the "second region."
[0017] The protrusion is located in the first region and protrudes relative to the support portion. A second wavelength conversion layer is disposed around the protrusion and covers the second region. On one hand, because red fluorescent particles are doped into the second wavelength conversion layer, a specified laser beam can be converted into red fluorescence upon excitation by the red fluorescent particles. Therefore, when this wavelength conversion component is configured in a lighting device, the lighting light produced by the device can contain a red light component, thereby improving the color rendering index (CRI) of the lighting light and enabling the lighting device to meet the requirements of high CRI applications.
[0018] On the other hand, the second wavelength conversion layer is set in the second region where the energy intensity of the laser spot is relatively low, which can avoid the situation where the high temperature of the specified laser affects the light efficiency of the red fluorescent particles, so as to ensure the excitation efficiency and thermal stability of the red fluorescence. Attached Figure Description
[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0020] Figure 1 This is a schematic diagram of the structure of the lighting device provided in the embodiments of this application.
[0021] Figure 2 yes Figure 1 A schematic diagram of a wavelength conversion component in the lighting device shown.
[0022] Figure 3 This is a graph showing the energy intensity distribution of the light spot provided in an embodiment of this application.
[0023] Figure 4 yes Figure 2 A schematic diagram of the structure of the first wavelength conversion layer in the lighting device shown.
[0024] Figure 5 yes Figure 1 The diagram shows another structural schematic of the wavelength conversion component in the lighting device shown.
[0025] Figure 6 yes Figure 1 This is another structural schematic diagram of the wavelength conversion component in the lighting device shown. Detailed Implementation
[0026] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.
[0027] Please see Figure 1 This application provides a wavelength conversion component 100 and a lighting device 200 configured with the wavelength conversion component 100. The lighting device 200 refers to a device used to generate illumination light. For example, the lighting device 200 can be a laser light, a stage light, a vehicle light, a searchlight, etc.
[0028] Specifically, the lighting device 200 may include a laser source 210 and a wavelength conversion component 100, wherein the laser source 210 is used to generate a specified laser L. The specified laser L is used as the excitation light for the wavelength conversion component 100. For example, the specified laser L may be a blue laser, and the center wavelength of the blue laser may be 450nm, 455nm, etc. Of course, in some other possible embodiments, the specified laser L may also be a violet laser, a deep blue laser, etc. Specifically, the laser source 210 may be a laser generator, such as a gas laser generator, a solid-state laser generator, a semiconductor laser generator, etc. The number of laser generators may be multiple to achieve high-power illumination of the lighting device 200.
[0029] The wavelength conversion component 100 is adapted to be positioned in the optical path of the specified laser L, and is used to convert the specified laser L into a specified fluorescence F, so that the lighting device 200 produces illumination light. Specifically, Figure 1 The wavelength conversion component 100 adopts a reflective structure, which can improve the excitation efficiency of a specified fluorescence F. In some possible embodiments, the wavelength conversion component 100 can be a fluorescence color wheel. Of course, in other possible embodiments, the wavelength conversion component 100 can also adopt a transmissive structure to make the overall structure of the wavelength conversion component 100 simpler and more compact. This embodiment does not specifically limit this.
[0030] In some possible embodiments, the size of the wavelength conversion component 100 is greater than or equal to the spot size corresponding to the specified laser L. This is to effectively reduce the diffusion area of the specified fluorescence F within the wavelength conversion component 100. Furthermore, it also ensures that the specified laser L is fully incident on the area where the wavelength conversion component 100 is located, thereby guaranteeing the efficiency of laser energy utilization.
[0031] It's easy to understand that during the process of a designated laser L passing through the wavelength conversion component 100, a portion of the laser light in the designated laser L may not be converted into fluorescence. This unconverted portion of the laser light will combine with the designated fluorescence F to form illumination light emitted to the outside. For example, when a blue laser excites yellow fluorescence, a portion of the blue laser light will not be converted into yellow fluorescence. This portion of the blue laser light will combine with the excited yellow fluorescence to form white light (i.e., illumination light).
[0032] Please see Figure 2The wavelength conversion assembly 100 may include a support member 10, a first wavelength conversion layer 30, and a second wavelength conversion layer 50. The first wavelength conversion layer 30 may include a connected support portion 320 and a protrusion 340. The support portion 320 is disposed on the support member 10, and the side of the support portion 320 facing away from the support member 10 has an adjacent first region 302 and a second region 304. The second region 304 is disposed around the outer periphery of the first region 302.
[0033] Both the first region 302 and the second region 304 are suitable for being positioned on the optical path of the designated laser L, and the energy intensity of the laser spot in the first region 302 is greater than the energy intensity of the laser spot in the second region 304. Specifically, when the designated laser L irradiates the first wavelength conversion layer 30, a laser spot is formed. In this embodiment, the region with higher energy intensity of the laser spot on the first wavelength conversion layer 30 is referred to as "first region 302," and the region with lower energy intensity of the laser spot on the first wavelength conversion layer is referred to as "second region 304." Figure 2 In the embodiment shown, the middle region of the first wavelength conversion layer 30 is the first region 302, and the regions on both sides of the cross section are the second regions 304.
[0034] It should be noted that there may not be a clear boundary between the first region 302 and the second region 304. Researchers can determine the first region 302 and the second region 304 based on the specific energy distribution of the laser spot formed on the first wavelength conversion layer 30 by the specified laser L. Of course, there can also be a clear boundary between the first region 302 and the second region 304. Specifically, the protrusion 340 is located in the first region 302 and protrudes relative to the supporting portion 320 to form a stepped surface. Therefore, the first region 302 and the second region 304 can be divided based on the boundary line of the stepped surface.
[0035] Please see Figure 3 and Figure 4 The energy distribution of the designated laser L spot can be a Gaussian distribution, that is, an energy distribution with strong energy in the center and weak energy around the edges. In this case, the second region 304 can be annular and surround the outer periphery of the first region 302. In this case, the first region 302 can be considered as the main spot region of the designated laser L, and the second region 304 can be considered as a non-main spot region of the designated laser L. In some possible embodiments, the first region 302 can be approximately circular or square, and the second region 304 can be approximately annular (e.g., an annular region, a square annular region, etc.).
[0036] In this embodiment, the second wavelength conversion layer 50 is disposed around the outer periphery of the protrusion 340 and covers the second region 304, and may include red fluorescent particles (not shown in the figure). On one hand, because the second wavelength conversion layer 50 is doped with red fluorescent particles, the red fluorescent particles can be converted into red fluorescence under the excitation of a specified laser L. Therefore, when the lighting device 200 is equipped with this wavelength conversion component 100, the illumination light generated by the lighting device 100 can contain a red light component to improve the color rendering index of the illumination light, enabling the lighting device 100 to meet the application scenarios requiring a high color rendering index.
[0037] On the other hand, the second wavelength conversion layer 50 is set in the second region 304 where the energy intensity of the laser spot is relatively low, which can prevent the high-intensity specified laser L from affecting the light efficiency of the red fluorescent particles, so as to ensure the excitation efficiency and thermal stability of the red fluorescent particles.
[0038] The specific implementation of the wavelength conversion component 100 is explained below.
[0039] In this embodiment, the support member 10 is generally block-shaped and serves to fix and support the first wavelength conversion layer 30 and the second wavelength conversion layer 50. Please refer to... Figure 5 The support member 10 may include a substrate 120 and a solder layer 140, with the solder layer 140 connected between the substrate 120 and the carrier portion 320 of the first wavelength conversion layer 30.
[0040] In some possible embodiments, substrate 120 may be a thermally conductive substrate with high thermal conductivity to quickly dissipate heat generated by the irradiation of the designated laser L, thereby ensuring the lifespan of the wavelength conversion component 100. As one embodiment, substrate 120 may be a ceramic substrate, such as an aluminum nitride substrate, an alumina substrate, a boron nitride substrate, a silicon nitride substrate, etc. As another embodiment, substrate 120 may be a metal substrate, such as an aluminum alloy substrate, a copper alloy substrate, etc.
[0041] The solder layer 140 is used to fix the substrate 120 and the first wavelength conversion layer 30 together, thereby improving the overall connection reliability of the wavelength conversion assembly 100. Specifically, the solder layer 140 can be a sintered silver layer or a tin-based solder layer. In addition, since the material of the solder layer 140 is usually metal, the solder layer 140 can also conduct the heat accumulated between the first wavelength conversion layer 30 and the second wavelength conversion layer 50 to the substrate 120, thereby improving the heat dissipation efficiency of the wavelength conversion assembly 100.
[0042] In this embodiment, the first wavelength conversion layer 30 is connected to the support member 10, which is used to convert the specified laser L into the specified fluorescence F. The wavelength range of the specified fluorescence F does not overlap with the wavelength range of red light. For example, the specified fluorescence F can be a single-color fluorescence, such as yellow fluorescence, green fluorescence, etc. The specified fluorescence F can be a mixed fluorescence of multiple colors, such as a mixed fluorescence of yellow fluorescence and green fluorescence. Therefore, when the wavelength conversion component 100 is configured in the lighting device 200, the illumination light generated by the lighting device 200 can be mixed with the specified laser L, the specified fluorescence F, and red fluorescence.
[0043] In some possible embodiments, the size of the first wavelength conversion layer 30 is greater than or equal to the spot size corresponding to the specified laser L, so as to effectively reduce the diffusion area of the specified fluorescence F inside the first wavelength conversion layer 30. In addition, it can also ensure that the specified laser L fully enters the area where the first wavelength conversion layer 30 is located, so as to ensure the utilization efficiency of laser energy. Further, since the second wavelength conversion layer 50 covers the second area 304 on the first wavelength conversion layer 30, when the size of the first wavelength conversion layer 30 is greater than or equal to the spot size corresponding to the specified laser L, it can also ensure that the specified laser L fully enters the area where the second wavelength conversion layer 50 is located, so as to ensure that red fluorescence can be successfully excited.
[0044] It should be noted that the spot size corresponding to the specified laser L is greater than the size of the first area 302, so as to prevent the second area 304 from being irradiated by the specified laser L, so as to ensure that red fluorescence can be successfully excited.
[0045] Specifically, the first wavelength conversion layer 30 may include a connected bearing portion 320 and a protruding portion 340. The protruding portion 340 is located on the side of the bearing portion 320背离 the support member 10 and protrudes relative to the bearing portion, so that the cross-sectional shape of the first wavelength conversion layer 30 is generally "convex". In Figure 4 In the shown embodiment, the second area 304 is wound around the outer periphery of the first area 302, so that the protruding portion 340 provided in the first area 302 is generally located at the central position of the first wavelength conversion layer 30.
[0046] It should be noted here that the names of the "bearing portion" and the "protruding portion" are both named for convenience of description. In a specific example, there may or may not be an obvious dividing line between the structures of the two. In some possible embodiments, the bearing portion 320 and the protruding portion 340 may be an integrally formed structure. For example, the first wavelength conversion layer 30 may be machined, and the bearing portion 320 and the protruding portion 340 are respectively two parts at different positions on the first wavelength conversion layer 30.
[0047] In some possible embodiments, the overall thickness of the first wavelength conversion layer 30 can be greater than or equal to 200 μm and less than or equal to 400 μm. For example, the overall thickness can be 200 μm, 240 μm, 270 μm, 350 μm, 400 μm, etc.
[0048] Specifically, the first wavelength conversion layer 30 can be a yellow fluorescent ceramic layer, such as a YAG:Ce-Al2O3 multiphase yellow fluorescent ceramic, which has high thermal conductivity and stability. Therefore, when the specified laser L is a blue laser, the generated specified fluorescence F is yellow fluorescence.
[0049] exist Figure 5 In the illustrated embodiment, the wavelength conversion component 100 may further include a reflective layer 60 disposed between the support member 10 and the carrier portion 320. The reflective layer 60 is used to reflect light. That is, the wavelength conversion component 100 in this embodiment adopts a reflective structure.
[0050] On one hand, the reflective layer 60 can reflect the designated laser L. Specifically, during the process of the designated laser L passing through the first wavelength conversion layer 30, some laser light may not be converted into fluorescence. At this time, this portion of laser light will be reflected back to the first wavelength conversion layer 30 by the reflective layer 60 to achieve secondary excitation of the remaining designated laser L.
[0051] Therefore, compared to the transmissive wavelength conversion component 100, the reflective wavelength conversion component 100 has a higher fluorescence excitation efficiency. Of course, it is easy to understand that during the process of the specified laser L passing through the first wavelength conversion layer 30 twice, some laser light may still not be converted into fluorescence. This part of the laser light will be emitted to the outside to combine with the specified fluorescence F to generate illumination light.
[0052] On the other hand, the reflective layer 60 can reflect a specific fluorescence F. Specifically, since the specific fluorescence F is Lambertian, a portion of the fluorescence in the specific fluorescence F will be emitted toward one side of the reflective layer 60. Therefore, the reflective layer 60 in this embodiment is also used to reflect this portion of the fluorescence to improve the energy utilization efficiency of the specific fluorescence F.
[0053] Furthermore, among the designated laser L and designated fluorescence F reflected by the reflective layer 60, a portion of the light will diffuse laterally and be incident on the second wavelength conversion layer 50 to excite red fluorescence. Therefore, the wavelength conversion component 100 in this embodiment can not only reduce the light loss caused by the lateral diffusion of the designated laser L and designated fluorescence F within it, but also utilize this portion of light to excite red fluorescence, thereby increasing the overall energy intensity of the red fluorescence, so that the mixed illumination light (i.e., white light) can have a higher color rendering index.
[0054] Furthermore, the reflective layer 60 can also reflect red fluorescence, so that the red fluorescence, together with the designated laser L and the designated fluorescence F, forms an illumination ray with a high color rendering index.
[0055] Specifically, the reflective layer 60 can be a metal reflective film or a dielectric reflective film. Figure 5 In the illustrated embodiment, the reflective layer 60 is connected between the first wavelength conversion layer 30 and the solder layer 140. As one implementation, if the first wavelength conversion layer 30 is a yellow fluorescent ceramic layer, a metal film can be sputtered by magnetron sputtering after polishing one side of the yellow fluorescent ceramic layer to form the reflective layer 60.
[0056] In some other possible embodiments, the reflective layer 60 may not be provided between the first wavelength conversion layer 30 and the support member 10. In this case, the support member 10 may be a transparent substrate (e.g., a glass substrate, a sapphire substrate, etc.). In this case, the wavelength conversion component 100 has a transmissive structure.
[0057] In this embodiment, the second wavelength conversion layer 50 is disposed around the outer periphery of the protrusion 340 and covers the second region 304. It may include red fluorescent particles to convert the specified laser L into red fluorescence. Specifically, the second wavelength conversion layer 50 is fixed on the stepped surface formed by the protrusion of the protrusion 340 protruding towards the support portion 320.
[0058] Specifically, the red fluorescent particles can be nitride fluorescent particles. For example, Si3N4 can be used as the raw material for red fluorescent particles. It is easy to understand that since the thermal stability of Si3N4 is slightly worse than that of the yellow fluorescent ceramic layer of the first wavelength conversion layer 30, in this embodiment, the second wavelength conversion layer 50 is set in the second region 304 where the energy intensity of the laser spot is relatively low, which can ensure the thermal stability of the red fluorescent particles.
[0059] In some possible embodiments, the thickness of the second wavelength conversion layer 50 can be greater than or equal to 30 μm and less than or equal to 80 μm. For example, the thickness can be 30 μm, 50 μm, 70 μm, 80 μm, etc. Therefore, the thickness of the second wavelength conversion layer 50 in this embodiment is relatively small, which is beneficial for the wavelength conversion component 100 to achieve a small size design, thereby saving installation space of the lighting device 200.
[0060] In some possible embodiments, the second wavelength conversion layer 50 is a fluorescent glass film layer covering the second region 304. Here, "fluorescent glass film" can refer to a fluorescent film with fluorescent particles doped into a glass matrix. That is, in this application, the second wavelength conversion layer 50 uses an inorganic encapsulation method with a glass matrix. Compared to organic encapsulation methods such as silicone or resin, the fluorescent glass film has better thermal conductivity, thus preventing yellowing that may occur under prolonged irradiation by a high-power laser, thereby ensuring the excitation efficiency of red fluorescence.
[0061] Furthermore, since red fluorescent particles primarily use Si3N4 as a raw material, and Si3N4 has a low diffusion coefficient, it is difficult to directly prepare high-performance fluorescent ceramic materials using this raw material. For example, the main raw materials for red fluorescent particles may include at least one of the following: CaAlSiN3:Eu 2+ (Ca,Sr)AlSiN3:Eu 2+ (Ca,Ba)AlSiN3:Eu 2+ Or (Ca,Sr,Ba)AlSiN3:Eu 2+ Therefore, this embodiment uses a glass matrix inorganic encapsulation method, which allows Si3N4 to be fully dispersed within the fluorescent glass film to ensure the excitation efficiency of red fluorescence.
[0062] In some possible embodiments, the second wavelength conversion layer 50 may further include at least one of yellow fluorescent particles, green fluorescent particles, and cyan fluorescent particles, which are also used to convert the specified laser L into at least one of green fluorescence, cyan fluorescence, and yellow fluorescence to improve the color rendering index of the illumination light. Specifically, the yellow fluorescent particles may be cerium-doped yttrium aluminum garnet (Ce:YAG) scintillation crystal particles, the cyan fluorescent particles may be polyaluminate particles, and the green fluorescent particles may be aluminate (LuAG) particles.
[0063] In some possible embodiments, the ratio between the area of the first region 302 and the area of the second region 304 is greater than or equal to 1:8 and less than or equal to 1:3. For example, the ratio can be 1:8, 1:6, 1:5, 1:3, etc. Therefore, the wavelength conversion component 200 in this embodiment can avoid the phenomenon of yellowing or even burning of the fluorescent glass film layer under long-term irradiation by high-power laser while having a high color rendering index, thereby ensuring the excitation efficiency of red fluorescence.
[0064] In some possible embodiments, the energy distribution of the laser L spot can be a Gaussian distribution, and the second region 304 can be annular and surround the outer periphery of the first region 302. In this case, the second wavelength conversion layer 50 is annular, for example, circular. Furthermore, the concentration of red fluorescent particles gradually increases in the direction from the inner side of the second region 304 to the outer side of the second region 304. Here, "inner side of the second region 304" can be understood as the side of the second region 304 closer to the first region 302; and "outer side of the second region 304" can be understood as the side of the second region 304 farther from the first region 302.
[0065] Therefore, in this embodiment, the concentration of red fluorescent particles in the second wavelength conversion layer 50 is non-uniformly distributed. Researchers can adjust the overlap area between the specified laser L and the second region 304 by adjusting the spot size, so as to adjust the proportion of red fluorescence in the illumination light and achieve different color rendering indices to enrich the application scenarios of the lighting device 200.
[0066] In some possible embodiments, the wavelength conversion component 200 may further include a beam-splitting layer 40 disposed between the second wavelength conversion layer 50 and the carrier portion 320. The beam-splitting layer 40 is used to reflect red light and transmit visible light other than red light. Specifically, the beam-splitting layer 40 may be a red band-stop film.
[0067] On one hand, when the designated laser L is incident on the second wavelength conversion layer 50, the red fluorescence generated by the excitation can be reflected by the beam splitter 40, thereby improving the utilization efficiency of the red fluorescence. On the other hand, some of the designated laser L that is not excited by the second wavelength conversion layer 50 can be transmitted to the carrier 320 by the beam splitter 40, thereby exciting the designated fluorescence F, thereby improving the utilization efficiency of the designated laser L.
[0068] Furthermore, when a portion of the laterally diffused designated laser L and designated fluorescence F are reflected by the reflective layer 60 to the second wavelength conversion layer 50, the presence of the beam splitting layer 40 can also ensure that this portion of light can be transmitted smoothly and thus be successfully incident on the second wavelength conversion layer 50.
[0069] In some possible embodiments, the thickness of the beam-splitting layer 40 can be greater than or equal to 0.2 μm and less than or equal to 2 μm. For example, the thickness can be 0.2 μm, 0.5 μm, 0.8 μm, 1.5 μm, 2 μm, etc. Therefore, the relatively small thickness of the beam-splitting layer 40 in this embodiment is beneficial for achieving a small-size design of the wavelength conversion component 100, thereby saving installation space for the lighting device 200.
[0070] Please see Figure 6The wavelength conversion assembly 200 may further include an antireflection layer 70, which is disposed on the side of the second wavelength conversion layer 50 away from the support portion 320. Specifically, the antireflection layer 70 may cover the surface of the second wavelength conversion layer 50, thereby protecting the second wavelength conversion layer 50.
[0071] In one implementation, the antireflection layer 70 can be a silicon dioxide thin film. Because silicon dioxide has good chemical and thermal stability, it can protect the second wavelength conversion layer 50 from external environmental erosion, such as oxidation and corrosion, thereby improving its service life. Furthermore, silicon dioxide has a high refractive index (approximately 1.54), which can act as an anti-reflective agent, further improving the optical properties of the second wavelength conversion layer 50.
[0072] This application provides a wavelength conversion component 100 and a lighting device 200 configured with the wavelength conversion component 100. The wavelength conversion component 100 may include a support member 10, a first wavelength conversion layer 30, and a second wavelength conversion layer 50. The first wavelength conversion layer 30 may include a connected support portion 320 and a protrusion 340. The support portion 320 is disposed on the support member 10, and the side of the support portion 320 facing away from the support member 10 has an adjacent first region 302 and a second region 304. The second region 304 is disposed around the outer periphery of the first region 302.
[0073] Both the first region 302 and the second region 304 are adapted to be disposed in the optical path of the designated laser L, and the spot energy intensity of the designated laser L in the first region 302 is greater than the spot energy intensity of the designated laser L in the second region 304. The second wavelength conversion layer 50 is disposed around the outer periphery of the protrusion 340 and covers the second region 304, and may include red fluorescent particles.
[0074] On one hand, because red fluorescent particles are doped in the second wavelength conversion layer 50, the specified laser L can be converted into red fluorescence under the excitation of the red fluorescent particles. Therefore, when the lighting device 200 is equipped with this wavelength conversion component 100, the lighting light produced by the lighting device 100 can be mixed with a red light component to improve the color rendering index of the lighting light, so that the lighting device 100 can meet the application scenarios with high color rendering index.
[0075] On the other hand, the second wavelength conversion layer 50 is set in the second region 304 where the energy intensity of the laser spot is relatively low, which can prevent the high-intensity specified laser L from reducing the light efficiency of the red fluorescent particles, so as to ensure the excitation efficiency and thermal stability of the red fluorescent particles.
[0076] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.
[0077] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the components or elements referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0078] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0079] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0080] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
Claims
1. A wavelength conversion component, characterized in that, include: Support components; The first wavelength conversion layer includes a carrier portion and a protrusion portion connected to each other; the carrier portion is disposed on the support member, and the side of the carrier portion away from the support member has an adjacent first region and a second region, the second region being disposed around the outer periphery of the first region; The protrusion is located in the first region and protrudes relative to the supporting portion; as well as A second wavelength conversion layer is disposed around the outer periphery of the protrusion and covers the second region; wherein the second wavelength conversion layer includes red fluorescent particles.
2. The wavelength conversion component according to claim 1, characterized in that, The ratio between the area of the first region and the area of the second region is greater than or equal to 1:8 and less than or equal to 1:
3.
3. The wavelength conversion component according to claim 1, characterized in that, The first wavelength conversion layer is a yellow fluorescent ceramic layer; and / or a yellow fluorescent ceramic layer. The second wavelength conversion layer is a fluorescent glass thin film layer.
4. The wavelength conversion component according to claim 1, characterized in that, The second wavelength conversion layer also includes at least one of yellow fluorescent particles, green fluorescent particles, and cyan fluorescent particles.
5. The wavelength conversion component according to any one of claims 1 to 4, characterized in that, The wavelength conversion component further includes a reflective layer disposed between the support member and the load-bearing portion.
6. The wavelength conversion component according to claim 5, characterized in that, The wavelength conversion component further includes a beam-splitting layer, which is disposed between the second wavelength conversion layer and the carrier portion; The beam-splitter layer is used to reflect red light and transmit visible light other than red light.
7. The wavelength conversion component according to any one of claims 1 to 4, characterized in that, The wavelength conversion component further includes an anti-reflection layer, which is disposed on the side of the second wavelength conversion layer opposite to the carrier portion.
8. The wavelength conversion component according to any one of claims 1 to 4, characterized in that, The support member includes a substrate and a solder layer; the solder layer is connected between the substrate and the carrier portion.
9. A lighting device, characterized in that, include: A laser source used to generate a specified laser beam; as well as The wavelength conversion component as described in any one of claims 1 to 8 is disposed in the optical path of the specified laser and is used to convert the specified laser into specified fluorescence, wherein the size of the first wavelength conversion layer is greater than or equal to the spot size corresponding to the specified laser.
10. The lighting device according to claim 9, characterized in that, Both the first region and the second region are located on the optical path of the designated laser, and the spot energy intensity of the designated laser in the first region is greater than that in the second region.