Inverter bridge arm and inverter module

Abstract

The inverter bridge arm comprises four IGBT modules and two diode modules, each IGBT module comprises a first IGBT tube and a second IGBT tube, each IGBT and each diode are connected through a specific mode, the inverter bridge arm of an NPC-I topological structure can be formed through combination, the number of the IGBT tubes can be reduced, cost can be reduced, and the inverter bridge arm is simple in structure and convenient to use. And the power density is improved.

Description

Technical Field

[0001] This utility model relates to the field of photovoltaic inverter technology, and in particular to an inverter bridge arm and an inverter module. Background Technology

[0002] Currently, mainstream photovoltaic inverters generally adopt the ANPC three-level topology structure based on two-level IGBT half-bridge modules. The number of IGBT chips that can be integrated in a single package is limited, resulting in a low overall power density. Utility Model Content

[0003] The technical problem to be solved by this utility model is that the number of IGBT chips that can be integrated in a single package of the current mainstream photovoltaic inverters is limited, resulting in a low overall power density.

[0004] To solve the above-mentioned technical problems, the first aspect of this utility model discloses an inverter bridge arm, the inverter bridge arm comprising:

[0005] Four IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The midpoint of the bridge arm between the first IGBT transistor and the second IGBT transistor is used as the first pin of the IGBT module, the emitter of the second IGBT transistor is used as the second pin of the IGBT module, and the collector of the first IGBT transistor is used as the third pin of the IGBT module.

[0006] Two diode modules, wherein each diode module includes a diode, with the cathode of the diode serving as the cathode of the diode module and the anode of the diode serving as the anode of the diode module;

[0007] The first pin of the first IGBT module is connected to the third pin of the first IGBT module. The second pin of the first IGBT module is connected to the anode of the first diode module, the first pin of the second IGBT module, and the third pin of the second IGBT module. The second pin of the second IGBT module is connected to the first pin of the third IGBT module and the cathode of the second diode module, the first pin of the fourth IGBT module, and the cathode of the first diode module is connected to the anode of the second diode module. The second pin of the second IGBT module, the first pin of the third IGBT module, and the third pin of the third IGBT module are used as the AC side connection points of the inverter bridge arm. The first pin of the first IGBT module and the third pin of the third IGBT module are used as the positive DC bus connection points of the inverter bridge arm. The second pin of the fourth IGBT module is used as the negative DC bus connection point of the inverter bridge arm. The cathode of the first diode module and the anode of the second diode module are used as the midpoint connection points of the DC bus of the inverter bridge arm.

[0008] As an optional implementation, in the first aspect of this utility model, four IGBT modules and two diode modules are arranged in two columns and three rows, with the second IGBT module located on the right side of the first row, the third IGBT module located on the left side of the first row, the fourth IGBT module located on the left side of the second row, the first IGBT module located on the right side of the second row, the second diode module located on the left side of the third row, and the first diode module located on the right side of the third row.

[0009] As an optional implementation, in the first aspect of this utility model, four IGBT modules and two diode modules are arranged in two columns and three rows, with the second IGBT module located on the right side of the first row, the third IGBT module located on the left side of the first row, the second diode module located on the left side of the second row, the first diode module located on the right side of the second row, the fourth IGBT module located on the left side of the third row, and the first IGBT module located on the right side of the third row.

[0010] As an optional implementation, in the first aspect of this utility model, the IGBT module is a 62mm module.

[0011] As an optional implementation, in the first aspect of this invention, the pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.

[0012] The second aspect of this utility model discloses an inverter module, including any of the inverter bridge arms mentioned above, wherein the number of inverter bridge arms is greater than 1 and they are arranged sequentially on a heat sink.

[0013] As an optional implementation, in the second aspect of this utility model, the output terminal of the inverter module is either a parallel output or an independent output.

[0014] As an optional implementation, in the second aspect of this utility model, the radiator is any one of an aluminum radiator, a two-phase flow radiator, or a liquid-cooled radiator.

[0015] Compared with the prior art, the embodiments of this utility model have the following beneficial effects:

[0016] In this embodiment of the invention, the inverter bridge arm includes four IGBT modules and two diode modules. Each IGBT module includes a first IGBT and a second IGBT. The IGBTs and diodes are connected in a specific manner and can be combined to form an inverter bridge arm with an NPC-I topology, which can reduce the number of IGBTs, lower costs, and increase power density. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is an internal topology diagram of the IGBT module disclosed in this embodiment of the utility model;

[0019] Figure 2 This is a pinout diagram of the IGBT module disclosed in this embodiment of the utility model;

[0020] Figure 3 This is an internal topology diagram of the diode module disclosed in this embodiment of the present invention;

[0021] Figure 4 This is a pinout diagram of the diode module disclosed in this embodiment of the utility model;

[0022] Figure 5 This is the first layout and connection method of each module in the inverter bridge arm disclosed in this utility model embodiment;

[0023] Figure 6 This is the second layout and connection method of each module in the inverter bridge arm disclosed in this embodiment of the utility model;

[0024] Figure 7 This is an inverter module disclosed in an embodiment of the present utility model;

[0025] Figure 8 This is another inverter module disclosed in this utility model embodiment. Detailed Implementation

[0026] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, apparatus, product, or end that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or ends.

[0028] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0029] This utility model discloses an inverter bridge arm and an inverter module. The inverter bridge arm includes: four IGBT modules, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The midpoint of the bridge arm between the first and second IGBT transistors is used as the first pin of the IGBT module, the emitter of the second IGBT transistor is used as the second pin of the IGBT module, and the collector of the first IGBT transistor is used as the third pin of the IGBT module; two diode modules, wherein each diode module includes one diode. The cathode of the diode is used as the cathode of the diode module, and the anode of the diode is used as the anode of the diode module; the first pin of the first IGBT module Q1 is connected to the third pin of the first IGBT module Q1, and the second pin of the first IGBT module Q1 is connected to... The anode of the first diode module D1 is connected to the first and third pins of the second IGBT module Q2. The second pin of the second IGBT module Q2 is connected to the first and third pins of the third IGBT module Q3. The second pin of the third IGBT module Q3 is connected to the cathode of the second diode module D2 and the first and third pins of the fourth IGBT module Q4. The cathode of the first diode module D1 is connected to the anode of the second diode module D2. The second pin of the second IGBT module Q2 and the first and third pins of the third IGBT module Q3 serve as the AC side connection points of the inverter bridge arm. The first and third pins of the first IGBT module Q1 serve as the positive DC bus connection points of the inverter bridge arm. The second pin of the fourth IGBT module Q4 serves as the negative DC bus connection point of the inverter bridge arm. The cathode of the first diode module D1 and the anode of the second diode module D2 serve as the midpoint connection points of the DC bus of the inverter bridge arm. This configuration can form an inverter bridge arm with an NPC-I topology, reducing the number of IGBTs, lowering costs, and increasing power density. These connections are explained in detail below.

[0030] Example 1

[0031] Figure 1 This is an internal topology diagram of the IGBT module disclosed in this embodiment of the utility model;

[0032] Figure 2 This is a pinout diagram of the IGBT module disclosed in this embodiment of the utility model;

[0033] Figure 3 This is an internal topology diagram of the diode module disclosed in this embodiment of the present invention;

[0034] Figure 4This is a pinout diagram of the diode module disclosed in this embodiment of the utility model;

[0035] Figure 5 This is the first layout and connection method of the modules in the inverter bridge arm disclosed in this utility model embodiment.

[0036] like Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, this utility model discloses an inverter bridge arm, which includes:

[0037] Four IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The midpoint of the bridge arm between the first IGBT transistor and the second IGBT transistor is used as the first pin of the IGBT module, the emitter of the second IGBT transistor is used as the second pin of the IGBT module, and the collector of the first IGBT transistor is used as the third pin of the IGBT module.

[0038] Two diode modules, wherein each diode module includes a diode, with the cathode of the diode serving as the cathode of the diode module and the anode of the diode serving as the anode of the diode module;

[0039] The first pin of the first IGBT module Q1 is connected to the third pin of the first IGBT module Q1. The second pin of the first IGBT module Q1 is connected to the anode of the first diode module D1, the first pin and the third pin of the second IGBT module Q2, the second pin of the second IGBT module Q2 is connected to the first pin and the third pin of the third IGBT module Q3, the second pin of the third IGBT module Q3 is connected to the cathode of the second diode module D2, the first pin and the third pin of the fourth IGBT module Q4, and the cathode of the first diode module D1 is connected to the anode of the second diode module D2. The second pin of the second IGBT module Q2 and the first pin and the third pin of the third IGBT module Q3 are used as the AC side connection points of the inverter bridge arm. The first pin and the third pin of the first IGBT module Q1 are used as the positive DC bus connection points of the inverter bridge arm. The second pin of the fourth IGBT module Q4 is used as the negative DC bus connection point of the inverter bridge arm. The cathode of the first diode module D1 and the anode of the second diode module D2 are used as the midpoint connection points of the DC bus of the inverter bridge arm.

[0040] In one alternative implementation, four IGBT modules and two diode modules are arranged in two columns and three rows, with the second IGBT module Q2 located on the right side of the first row, the third IGBT module Q3 located on the left side of the first row, the fourth IGBT module Q4 located on the left side of the second row, the first IGBT module Q1 located on the right side of the second row, the second diode module D2 located on the left side of the third row, and the first diode module D1 located on the right side of the third row.

[0041] In one alternative implementation, the IGBT module is a 62mm module.

[0042] In one alternative implementation, the pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.

[0043] Example 2

[0044] Figure 6 This is the second layout and connection method of the modules in the inverter bridge arm disclosed in this utility model embodiment.

[0045] like Figure 6 As shown, this utility model also discloses a second layout and connection method of each module in the inverter bridge arm. Four IGBT modules and two diode modules are arranged in two columns and three rows. The second IGBT module Q2 is located on the right side of the first row, the third IGBT module Q3 is located on the left side of the first row, the second diode module D2 is located on the left side of the second row, the first diode module D1 is located on the right side of the second row, the fourth IGBT module Q4 is located on the left side of the third row, and the first IGBT module Q1 is located on the right side of the third row.

[0046] Example 3

[0047] Figure 7 This is an inverter module disclosed in an embodiment of the present utility model.

[0048] like Figure 7 As shown, this utility model discloses an inverter module, including any of the above-mentioned inverter bridge arms, the number of inverter bridge arms is greater than 1, and they are arranged sequentially on the heat sink.

[0049] In an optional embodiment, the output of the inverter module is an independent output.

[0050] In an optional embodiment, the heat sink is any one of an aluminum heat sink, a two-phase flow heat sink, or a liquid-cooled heat sink.

[0051] Example 4

[0052] Figure 8 This is another inverter module disclosed in this utility model embodiment.

[0053] like Figure 8 As shown, this utility model discloses another inverter module, which differs from the inverter module in Embodiment 4 in that the output terminal of the inverter module is a parallel output.

[0054] As can be seen, the inverter bridge arm and inverter module disclosed in this utility model adopt a common-emitter 62mm IGBT module to connect the internal IGBTs in parallel, which can obtain a larger current output capability and improve the power density of the inverter. Moreover, the IGBT module terminals are all on the same side or the outside, which facilitates the connection of the drive board. At the same time, the IGBT module density is higher, which can reduce the area of ​​the bus copper bus, reduce costs, facilitate assembly, and can also be combined into an inverter bridge arm with an NPC-I topology, which can reduce the number of IGBT tubes and reduce costs.

[0055] Finally, it should be noted that the inverter bridge arm and inverter module disclosed in this utility model embodiment are merely preferred embodiments of this utility model, and are only used to illustrate the technical solutions of this utility model, not to limit it; although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of this utility model.

Claims

1. An inverter arm, characterized in that, The inverter bridge arm includes: Four IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the anode of the second diode, and the emitter of the second IGBT transistor. The cathode of the first diode is connected to the collector of the first IGBT transistor, and the cathode of the second diode is connected to the collector of the second IGBT transistor. The midpoint of the bridge arm between the first IGBT transistor and the second IGBT transistor is used as the first pin of the IGBT module, the emitter of the second IGBT transistor is used as the second pin of the IGBT module, and the collector of the first IGBT transistor is used as the third pin of the IGBT module. Two diode modules, wherein each diode module includes a diode, with the cathode of the diode serving as the cathode of the diode module and the anode of the diode serving as the anode of the diode module; The first pin of the first IGBT module is connected to the third pin of the first IGBT module. The second pin of the first IGBT module is connected to the anode of the first diode module, the first pin of the second IGBT module, and the third pin of the second IGBT module. The second pin of the second IGBT module is connected to the first pin of the third IGBT module and the cathode of the second diode module, the first pin of the fourth IGBT module, and the cathode of the first diode module is connected to the anode of the second diode module. The second pin of the second IGBT module, the first pin of the third IGBT module, and the third pin of the third IGBT module are used as the AC side connection points of the inverter bridge arm. The first pin of the first IGBT module and the third pin of the third IGBT module are used as the positive DC bus connection points of the inverter bridge arm. The second pin of the fourth IGBT module is used as the negative DC bus connection point of the inverter bridge arm. The cathode of the first diode module and the anode of the second diode module are used as the midpoint connection points of the DC bus of the inverter bridge arm.

2. The inverter arm according to claim 1, characterized in that, The four IGBT modules and two diode modules are arranged in two columns and three rows. The second IGBT module is located on the right side of the first row, the third IGBT module is located on the left side of the first row, the fourth IGBT module is located on the left side of the second row, the first IGBT module is located on the right side of the second row, the second diode module is located on the left side of the third row, and the first diode module is located on the right side of the third row.

3. The inverter arm according to claim 1, characterized in that, The four IGBT modules and two diode modules are arranged in two columns and three rows. The second IGBT module is located on the right side of the first row, the third IGBT module is located on the left side of the first row, the second diode module is located on the left side of the second row, the first diode module is located on the right side of the second row, the fourth IGBT module is located on the left side of the third row, and the first IGBT module is located on the right side of the third row.

4. The inverter arm according to any one of claims 1-3, characterized in that, The IGBT module is a 62mm module.

5. The inverter arm according to any one of claims 1-3, characterized in that, The pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.

6. An inverter module, characterized in that, It includes the inverter bridge arm as described in any one of claims 1-5, wherein the number of the inverter bridge arms is greater than 1 and they are arranged sequentially on the heat sink.

7. The inverter module according to claim 6, characterized in that, The output of the inverter module can be either parallel output or independent output.

8. The inverter module according to claim 6, characterized in that, The radiator is any one of aluminum radiator, two-phase flow radiator, or liquid-cooled radiator.

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