Low-damage reactive plasma deposition apparatus and coating system

Abstract

The application relates to a low-damage reactive plasma deposition device, which comprises a plasma generator, a target material, a substrate and a shielding mechanism. The plasma generator is located at the side of a work position and is adapted to emit a plasma beam to the work position. The target material is located in the work position and is adapted to be sublimated into a gas phase by the plasma beam. The substrate is correspondingly arranged above the target material and is adapted to deposit target material particles. The shielding mechanism is arranged between the target material and the substrate to block the energy particles in the plasma beam from migrating to the substrate. Thus, the energy particles in the plasma beam emitted by the plasma generator can directly bombard the substrate under the action of an electric field and cause lattice damage or sputtering effect on the deposited film. The positive potential of the mesh structure can deflect the motion trajectory of the positive ions, thereby playing a blocking role and avoiding the direct bombardment of the energy particles on the substrate, so that the damage of the energy particles to the perovskite is reduced.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a low-damage reactive plasma deposition apparatus. Additionally, it relates to a coating system. Background Technology

[0002] Reactive Plasma Deposition (RPD) is an advanced surface modification and thin film preparation technology. Its core principle is to excite the reactive gas through plasma. In a vacuum environment, the sublimated target particles are activated in the plasma region to form ionic states, and react with the introduced reactive gas to form a thin film deposited on the substrate surface. This technology has advantages such as low-temperature processing, high-precision control, and wide material adaptability.

[0003] Currently, in the fabrication of perovskite devices, the plasma generated by the RPD ion gun still contains a large number of energy particles (particle energies ranging from a few electron volts to 70 electron volts). These energy particles can still damage the perovskite. Therefore, tin oxide is usually deposited as a buffer layer using the ALD deposition method. The ALD buffer layer process has a long cycle time and is difficult to control.

[0004] In addition, the film uniformity of RPD is relatively poor at present, and the film thickness uniformity is adjusted by TPC plate, but the effect is limited.

[0005] RPD technology can be used to replace ALD deposition buffer layer, but RPD technology causes damage to the perovskite layer by energy particles during its deposition process. Utility Model Content

[0006] Therefore, it is necessary to provide a low-damage reactive plasma deposition apparatus to address the problem of energy particles damaging the perovskite layer during the deposition process of current RPD technology.

[0007] The first aspect of this application provides a low-damage reactive plasma deposition apparatus, comprising:

[0008] A plasma generator is located on the side of the work station and is adapted to emit a plasma beam toward the work station.

[0009] The target material is located in the working position and is adapted to be sublimated into gaseous target particles by being bombarded by the plasma beam.

[0010] A substrate, which is disposed on the upper part of the target material, and the target material particles are adapted to be deposited on the substrate;

[0011] A shielding mechanism is disposed between the target and the substrate to block energy particles in the plasma beam from migrating toward the substrate.

[0012] In one embodiment, the shielding mechanism is a mesh structure.

[0013] In one embodiment, the peripheral edge of the mesh structure is formed as an arc and concave towards the center of the mesh structure.

[0014] In one embodiment, the mesh openings on the mesh structure are round holes and / or square holes.

[0015] In one embodiment, the density of the mesh openings on the mesh structure corresponding to the central and peripheral regions of the substrate can be non-uniformly set, and the aperture size of each mesh opening can be adjusted.

[0016] In one embodiment, the density of the mesh openings on the mesh structure corresponding to the central region of the substrate may be greater than the density of the surrounding region.

[0017] In one embodiment, the shielding mechanism is fixed via a support structure and is arranged parallel to the substrate.

[0018] In one embodiment, the support structure is a TPC board adapted to support the sides of the mesh structure.

[0019] In one embodiment, the shielding mechanism is a grounded anode, and the plasma generator and the target are cathodes.

[0020] The second aspect of this application provides a coating system employing the low-damage reactive plasma deposition apparatus described in the first aspect of this application.

[0021] In the aforementioned low-damage reactive plasma deposition apparatus, the plasma beam emitted by the plasma generator bombards the target material, sublimating the target material into gaseous target particles. During the migration of the target particles toward the substrate, they must first pass through a shielding mechanism set between the target material and the substrate. Since the high-energy positive ions in the plasma beam emitted by the plasma generator may originally directly bombard the substrate under the action of the electric field, causing lattice damage or sputtering effect to the deposited film, the positive potential of the mesh structure will deflect the trajectory of these positive ions away from the substrate, thus playing a blocking role and preventing the high-energy positive ions from directly bombarding the substrate, thereby reducing the damage of these energy particles to the perovskite. Attached Figure Description

[0022] Figure 1 This is a side view of the low-damage reactive plasma deposition apparatus in an embodiment of this application;

[0023] Figure 2 This is a top view of the low-damage reactive plasma deposition apparatus in the embodiments of this application.

[0024] Explanation of reference numerals in the attached figures:

[0025] 1. Plasma generator; 2. Target material; 3. Substrate; 4. Shielding mechanism; 5. Support structure; 6. Plasma beam. Detailed Implementation

[0026] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0027] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0028] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0029] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0030] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0031] In this application, RPD (Reactive Plasma Deposition) technology is used to replace ALD (Atomic Layer Deposition) technology for depositing the buffer layer, which significantly improves the deposition rate. Specifically, RPD technology utilizes active particles in the plasma beam 6 for deposition, and its deposition rate is typically much higher than that of ALD technology. ALD technology, due to its self-limiting surface reaction-based layer-by-layer deposition, has a relatively slow deposition rate. The increased deposition rate translates to improved production efficiency, shortened production cycles, and reduced production costs, which is of great significance for large-scale industrial production. Secondly, the thin films formed by RPD technology are of superior quality. Thin films deposited using RPD technology typically exhibit better density, crystallinity, and lower defect density. This is because the high-energy particles in the plasma beam 6 promote the densification growth of the thin film, reducing the formation of porosity and defects. High-quality thin films can improve the performance and stability of devices; for example, in photovoltaic cells, they can improve photoelectric conversion efficiency and reduce recombination losses. Furthermore, the RPD process is more compatible and flexible. RPD technology is better compatible with existing photovoltaic cell production lines, reducing the cost of process adjustments and equipment modifications. Moreover, the structure and process parameters of the RPD equipment can be flexibly adjusted according to specific needs. Furthermore, RPD technology can be integrated with other processes, such as thin film deposition technologies (e.g., PVD, CVD), to form multi-process composite deposition systems that meet the fabrication needs of complex devices.

[0032] Furthermore, RPD technology requires lower equipment costs. Compared to ALD equipment, RPD equipment has a simpler structure and potentially lower manufacturing costs. It also simplifies the process, making operation and maintenance more convenient, thus reducing complexity and costs in the production process. Moreover, RPD technology offers a wider range of target materials, allowing the deposition of various metals, oxides, nitrides, and other thin film materials, providing more possibilities for device design. Therefore, replacing ALD technology with RPD technology for depositing buffer layers can bring significant advantages in deposition rate, thin film quality, process compatibility, and production costs.

[0033] Furthermore, for ease of understanding, the operating principle between the plasma generator 1, the target material 2, and the substrate 3 will be briefly described first. Firstly, reactive plasma beam deposition (RPD) technology is based on the synergistic effect of chemical reactions and physical deposition processes excited by a plasma beam 6. Its core is to achieve high-quality thin film growth through a specifically designed plasma beam 6 system. The excitation method of RPD is to ionize an inert gas (such as argon Ar) using an ion gun device to form a highly active plasma beam 6 containing ions, electrons, and free radicals. Then, by controlling the shape and trajectory of the plasma beam 6 emitted by the plasma generator 1, it is ensured that the plasma beam 6 can stably and uniformly bombard the target material 2. The high-energy particles in the plasma beam 6 emitted by the plasma generator 1 bombard the surface of the target material 2, causing the target material 2 to locally heat up through heat transfer, resulting in sublimation and the generation of gaseous atoms / ions. Some of the gaseous atoms are further ionized by free radicals or electrons in the plasma beam 6, forming ionized gas clusters to enhance deposition activity. Then, the ionized gas clusters are transported to the substrate surface under the guidance of a magnetic field, and adhere to the substrate through physical adsorption or chemical bonding. Under the control of the substrate temperature, the adsorbed atoms / ions migrate and recombine to form a dense and uniform thin film. For example, in perovskite solar cells, RPD technology is widely used to deposit oxide thin films such as SnO2 and TiO2.

[0034] This application provides a low-damage reactive plasma beam deposition apparatus based on the above principle. A shielding mechanism 4 is also provided between the target 2 and the substrate 3. The shielding mechanism 4 can block the high-energy particles generated by the reaction in the working position to avoid the high-energy particles directly bombarding the substrate 3, thereby reducing the damage of these high-energy particles to the perovskite.

[0035] Specifically, such as Figure 1As shown, the low-damage reactive plasma beam deposition apparatus includes a plasma generator 1, a target 2, a substrate 3, and a shielding mechanism 4. The plasma generator 1 is located on the side of the work station, allowing the plasma beam 6 to be emitted from the side of the work station into the work station. The target 2 is located in the work station and is adapted to sublimate into gaseous target 2 particles by bombardment by the plasma beam 6. The target 2 particles are substantially correspondingly disposed on the upper part of the target 2, and the substrate 3 is adapted to deposit the target 2 particles. The shielding mechanism 4 is disposed between the target 2 and the substrate 3, thereby preventing energy particles in the plasma beam 6 from migrating towards the substrate 3. Furthermore, by placing the plasma generator 1 on the side of the work station and emitting the plasma beam 6 towards the work station, the movement path and energy distribution of the plasma beam 6 can be controlled to reduce film damage and improve the quality and uniformity of the film.

[0036] In this process, the target material 2 can be heated. The plasma beam 6 emitted by the plasma generator 1, under the support of the magnetic and electric fields, turns and deflects towards the target material 2 after entering the working position. During its movement, it forms a plasma region. The plasma beam 6 converges on the surface of the target material 2. The surface of the target material 2 is heated and bombarded, and sublimates into gaseous target material 2 particles. The target material 2 particles collide with electrons in the plasma beam 6 through the plasma region and are dissociated into an ionic state, and react with the introduced reaction gas in the plasma region.

[0037] More specifically, the shielding mechanism 4 is a grounded anode, while the plasma generator 1 and the target material 2 are both cathodes. Therefore, the mesh structure forms an anode through grounding, generating an electric field between itself and the cathodes (plasma generator 1 and target material 2). This electric field influences the trajectories of ions and electrons in the plasma beam 6, thereby regulating the deposition process of the thin film on the substrate. Specifically, the additional potential added by the shielding mechanism 4 forms an electric field shielding region with the cathode area, where the trajectories and energies of positive ions and electrons are regulated. Specifically, because the shielding mechanism 4 carries a positive potential, it repels positive ions of the same charge, deflecting their trajectories, thus preventing the plasma beam 6 from directly bombarding the central region of the substrate 3 and reducing the deposition rate in the central region. Simultaneously, the shielding mechanism 4 adsorbs energetic electrons, reducing the impact of energetic electrons on the substrate 3, thereby reducing ionization damage to the thin film of the substrate 3 and helping to maintain the electroneutrality of the plasma beam 6 and stabilize its density.

[0038] like Figure 2As shown, the shielding mechanism 4 is a mesh structure. Using a mesh structure as the shielding mechanism 4 effectively blocks energy particles (such as high-energy positive ions) in the plasma beam 6 from migrating towards the substrate 3. This reduces the bombardment damage caused by energy particles to the thin films already deposited or being deposited on the substrate 3, improving the quality and performance of the films. Simultaneously, the mesh structure allows some neutral and low-energy particles to pass through, maintaining the continuity of the deposition process.

[0039] Specifically, the peripheral edges of the mesh structure are formed as arcs and concave towards the center of the mesh structure. This design helps optimize the distribution of the plasma beam 6 around the mesh structure and reduces the impact of edge effects on the deposition process. It should be noted that the peripheral edges of the mesh structure are not limited to the shape described above; they can also be conventional squares or other shapes.

[0040] More specifically, the mesh openings on the shielding mechanism 4 of the mesh structure can be round or square, or a combination of round and square openings. Round and square openings are common mesh shapes, as they are easier to manufacture and offer good permeability. Choosing these mesh shapes ensures the smooth passage of particles in the plasma beam 6 while maintaining the structural strength and stability of the mesh. Therefore, the design of the mesh structure and the shape and size of the mesh openings can influence the flow rate and distribution of target particles as they pass through the mesh structure, resulting in more uniform particle distribution to the substrate surface and further improving the uniformity of deposition conditions. It should be noted that the mesh opening structure is not limited to round and / or square openings; other shapes and combinations of shapes can be used as needed. Different mesh shapes may have different effects on the flow and distribution of the plasma beam 6, and can be selected according to specific requirements. Furthermore, the mesh aperture size can also be adjusted as needed.

[0041] Furthermore, RPD deposition exhibits a uniformity issue on substrate 3, with a thickness bias towards the center and a thinner thickness towards the edges. Therefore, to improve the film thickness uniformity on substrate 3, the mesh density of the stencil structure can be adjusted. The mesh density in the central and peripheral regions of the substrate can be non-uniformly configured, allowing for adaptive adjustment of the mesh density across different parts of the substrate. For example, a higher mesh density in the central region of substrate 3 can reduce the amount of target material 2 particles deposited in that region, thereby compensating for the deposition rate differences caused by the uneven distribution of the plasma beam 6. This design helps improve the uniformity of thin film deposition and reduce film thickness deviation.

[0042] Specifically, addressing the aforementioned issue of uneven thickness on substrate 3, where the center is thicker and the edges are thinner, the density of the mesh openings in the stencil structure corresponding to the central region of the substrate can be set to be higher than that of the peripheral region. To address the potential issue of a faster deposition rate in the central region of substrate 3 (higher particle density in the central region), increasing the mesh density in the central region reduces the amount of target material 2 particles deposited in that region. This helps balance the deposition rate across the entire substrate 3 surface, further improving the uniformity of thin film deposition. Furthermore, this setting optimizes the electric field distribution, allowing target material 2 particles to diffuse more evenly onto the substrate 3 surface, thereby improving the uniformity of film thickness on the substrate 3 surface. Thus, by non-uniformly setting the mesh density, the deposition requirements of different regions of substrate 3 can be optimized.

[0043] Furthermore, to fully leverage the role of the stencil structure in improving film thickness uniformity, its design parameters can be optimized. For example, regarding the mesh size and shape of the stencil structure, as mentioned above, the mesh size and shape can affect the transmittance and diffusion direction of the plasma beam 6. Therefore, by rationally designing the mesh size and shape, the flow path of the plasma beam 6 can be controlled, allowing it to reach the substrate 3 surface more uniformly. Further, the potential and distance of the stencil structure also affect the uniformity of the film thickness formed on the substrate surface. The potential of the stencil structure and its distance from the substrate 3 affect the electric field distribution and ion trajectory. Therefore, the spacing needs to be rationally adjusted to optimize the shielding effect of the electric field and further improve the film thickness uniformity. As for the material selection of the stencil structure, materials with good conductivity, high temperature resistance, and corrosion resistance are preferably selected to ensure the stability and durability of the stencil structure during the deposition process. Thus, through the rational design of the stencil structure described above, its effect of improving film thickness uniformity can be further optimized.

[0044] Furthermore, the stencil structure is fixed by the support structure 5, and the stencil structure is always parallel to the surface of the substrate 3. Fixing the shielding mechanism 4 by the support structure 5 and ensuring its parallel arrangement with the substrate 3 maintains a stable relative position between the shielding mechanism 4 and the substrate 3. This helps maintain the stability and repeatability of the deposition process, improving the quality and consistency of the film. Simultaneously, the parallel arrangement also helps optimize the distribution of the plasma beam 6 on the surface of the substrate 3, further improving deposition uniformity.

[0045] Here, the support structure 5 is set as a TPC plate, which can support the sides of the mesh structure to achieve stable load-bearing for the mesh structure.

[0046] This application provides a coating system in which the deposition step employs the low-damage reactive plasma beam 6 deposition apparatus described in any of the above embodiments. In this coating system, the target material 2 is treated by the plasma beam 6 emitter. The plasma beam 6 bombardment generates instantaneous high temperature to achieve in-situ sublimation on the surface of the target material 2. The sublimated target material 2 particles undergo inelastic collisions with high-energy electrons in the plasma beam 6 environment to form active ionic substances. The active particles undergo gas-phase chemical reactions with the introduced reactive gases (such as O2, N2, etc.) in the plasma beam 6 region to deposit onto the coating substrate 3.

[0047] In addition, the coating system also includes a shielding mechanism 4, which is positioned between the substrate 3 and the target 2. As a core module, the shielding mechanism 4 employs a mesh structure and forms an anode potential through grounding, thus constructing an asymmetric electric field system with the plasma generator 1 (acting as the cathode) and the target 2. This electric field system enables electric field line reconstruction by creating a curved electric field distribution on the surface of the mesh structure to establish an electric field shielding region. Furthermore, the mesh structure allows for particle trajectory control, specifically by generating Coulomb repulsion to deflect positive ions and an adsorption effect on electrons. Simultaneously, it maintains the electrical neutrality of the plasma beam 6 and compensates for space charge through electron capture, stabilizing the plasma beam 6 density.

[0048] Furthermore, by optimizing the design of the mesh structure, a concave arc design is adopted around the perimeter to ensure a smooth transition of the electric field gradient at the edges. Additionally, by optimizing the porosity of the mesh structure, the mesh density exhibits a gradient distribution with a denser center and sparser edges. The mesh density in both the central and edge regions can be adjusted as needed to ensure the uniformity of the basic deposition. Finally, a TPC ceramic substrate 3 is used as the support structure 5 for the mesh structure. This TPC ceramic substrate 3 combines mechanical strength and electrical insulation properties, enabling it to withstand the high-temperature environment during the reactive plasma beam deposition process. This design helps improve the stability and reliability of the entire device.

[0049] Therefore, by designing the structure of the coating system, the uniformity of substrate 3 deposition can be effectively guaranteed. Moreover, through the coordinated control between various structural components, the coating system can overcome the contradiction between film damage and deposition rate in the traditional plasma beam deposition process while maintaining the inherent advantages of RPD technology. It is particularly suitable for fields with stringent requirements for film quality, such as perovskite solar cells and flexible electronic devices.

[0050] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0051] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A low-damage reactive plasma deposition apparatus, characterized in that, include: A plasma generator is located on the side of the work station and is adapted to emit a plasma beam toward the work station. The target material is located in the working position and is adapted to be sublimated into gaseous target particles by being bombarded by the plasma beam. A substrate, which is disposed on the upper part of the target material, and the target material particles are adapted to be deposited on the substrate; A shielding mechanism is disposed between the target and the substrate to block energy particles in the plasma beam from migrating toward the substrate.

2. The low-damage reactive plasma deposition apparatus according to claim 1, characterized in that, The shielding mechanism is a mesh panel structure.

3. The low-damage reactive plasma deposition apparatus according to claim 2, characterized in that, The peripheral edges of the mesh structure are formed as arcs and concave towards the center of the mesh structure.

4. The low-damage reactive plasma deposition apparatus according to claim 3, characterized in that, The mesh openings on the mesh structure are round holes and / or square holes.

5. The low-damage reactive plasma deposition apparatus according to claim 4, characterized in that, The density of the mesh openings on the mesh structure corresponding to the central and peripheral regions of the substrate can be non-uniform, and the aperture size of each mesh opening can be adjusted.

6. The low-damage reactive plasma deposition apparatus according to claim 5, characterized in that, The density of the mesh openings on the mesh structure in the central region of the substrate can be greater than the density in the surrounding region.

7. The low-damage reactive plasma deposition apparatus according to claim 2, characterized in that, The shielding mechanism is fixed by a support structure and is arranged parallel to the substrate.

8. The low-damage reactive plasma deposition apparatus according to claim 7, characterized in that, The supporting structure is a TPC board, which is adapted to support the sides of the mesh structure.

9. The low-damage reactive plasma deposition apparatus according to any one of claims 1 to 8, characterized in that, The shielding mechanism is a grounded anode, and the plasma generator and the target material are cathodes.

10. A coating system, characterized in that, The low-damage reactive plasma deposition apparatus according to any one of claims 1 to 9 is employed.

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