Laser processing apparatus

Abstract

The application relates to the technical field of laser processing, in particular to a laser processing device. The laser processing device comprises a laser, a light shutter and a laser processing head arranged in sequence along an optical path, and the laser is used for emitting laser pulses; the laser processing device further comprises a signal monitoring assembly; wherein the signal monitoring assembly is used for detecting output light signals of the laser pulses, the signal monitoring assembly comprises a photoelectric conversion device, the photoelectric conversion device is used for detecting the output light signals, and the main output end of the laser is provided with the photoelectric conversion device; and / or the signal monitoring assembly is used for detecting control signals of the laser pulses, the signal monitoring assembly comprises an electric signal detector, the electric signal detector is used for detecting the control signals, the trigger signal input end interface of the laser is provided with the electric signal detector, and the feedback signal output end interface of the laser is provided with the electric signal detector; the application can greatly improve the detection efficiency and reduce yield loss caused by defect diffusion.

Description

Technical Field

[0001] This application relates to the field of laser processing technology, and more specifically, to a laser processing device. Background Technology

[0002] Through-Glass Via (TGV) technology, as a key interconnect solution in high-density advanced packaging, primarily relies on Laser-Induced Deep Etching (LIDE) technology. This involves using a laser to locally modify the glass substrate, followed by wet etching to form selective via structures in the modified areas. However, in practical applications, laser processing is a typical microfabrication process. Even minor fluctuations in laser parameters (such as power, pulse width, and repetition frequency) often lead to processing defects. For example, some areas of the locally modified glass substrate may not meet processing requirements; for instance, vias may not be successfully formed in certain locations, or the hole diameter and morphology may not meet design requirements. These defects prevent the subsequent wet etching from forming effective via structures, thus affecting the yield of TGV processing. Utility Model Content

[0003] The purpose of this application is to provide a laser processing device that aims to solve the technical problem in the related art where processing defects often occur during laser processing, affecting the yield of glass through-hole processing.

[0004] The technical solution is as follows:

[0005] This application provides a laser processing device, comprising: a laser, an optical shutter, and a laser processing head arranged sequentially along an optical path, wherein the laser is used to emit laser pulses;

[0006] The laser processing equipment also includes a signal monitoring component;

[0007] Wherein, the signal monitoring component is used to detect the output optical signal of the laser pulse, the signal monitoring component includes a photoelectric conversion device, the photoelectric conversion device is used to detect the output optical signal, and the main output terminal of the laser is provided with the photoelectric conversion device; and / or, the signal monitoring component is used to detect the control signal of the laser pulse, the signal monitoring component includes an electrical signal detector, the electrical signal detector is used to detect the control signal, the trigger signal input terminal interface of the laser is provided with the electrical signal detector, and the feedback signal output terminal interface of the laser is provided with the electrical signal detector.

[0008] By adopting the above-described scheme, compared with related technologies where post-processing automated optical inspection is performed after etching, leading to defect accumulation due to lag, this application, by detecting the output light signal of the laser pulse, can detect the laser pulse output parameters corresponding to the output light signal. This allows for real-time monitoring at the source of laser processing, enabling immediate judgment of abnormal laser pulse emission during processing. Problem locations can be quickly marked when defects occur, significantly shortening defect detection time, reducing yield loss due to defect propagation, and minimizing the risk of failure in subsequent processes. Furthermore, by directly monitoring the laser pulse output parameters, this application eliminates the need for individual optical scanning of each via, greatly improving detection speed and covering large-scale via processing, significantly enhancing detection efficiency and providing reliable assurance for micro-machining fields (such as TGV processing on glass and ceramic substrates).

[0009] In some implementations, the photoelectric conversion device is disposed between the optical shutter and the laser processing head.

[0010] In some implementations, the laser processing equipment further includes a beam shaping mechanism, wherein the laser, the optical shutter, the beam shaping mechanism, and the laser processing head are arranged sequentially along the optical path;

[0011] The photoelectric conversion device is disposed between the optical shutter and the beam shaping mechanism, and / or the photoelectric conversion device is disposed between the beam shaping mechanism and the laser processing head.

[0012] In some implementations, the photoelectric conversion device is used to determine the presence and / or quality of the laser pulse by detecting the output optical signal; the photoelectric conversion device includes at least one selected from the group consisting of a photodiode, a photoresistor, and a photomultiplier tube.

[0013] In some implementations, the photoelectric conversion device includes a photodiode; the photodiode is a PIN photodiode, avalanche photodiode, Schottky photodiode, junction photodiode, or multichannel array photodiode.

[0014] In some implementations, when the signal monitoring component is used to detect the control signal of the laser pulse, the control signal includes a trigger signal and a feedback signal;

[0015] The electrical signal detector, located at the trigger signal input terminal interface, is used to detect the trigger signal;

[0016] The electrical signal detector, located at the feedback signal output interface, is used to detect the feedback signal.

[0017] In some implementations, the laser processing equipment is used to process glass substrates; the laser processing head is a Bessel processing head; and the laser is an ultrafast laser that emits ultrafast laser light.

[0018] In some implementations, the electrical signal detector includes a field-programmable gate array (FPGA) circuit and / or an analog-to-digital converter (ADC).

[0019] In some implementations, the laser processing equipment is used to perform laser drilling on the workpiece, and the signal monitoring component determines the processing status of the laser drilling based on the output optical signal and / or the control signal.

[0020] In some implementations, the laser processing equipment further includes a processing table for holding the workpiece. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic flowchart of the laser processing defect monitoring method provided in the embodiments of this application;

[0023] Figure 2 This is another schematic flowchart of the laser processing defect monitoring method provided in the embodiments of this application;

[0024] Figure 3 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application;

[0025] Figure 4 This is a schematic diagram of the structure of the laser processing equipment provided in the embodiments of this application;

[0026] Figure 5 This is another structural schematic diagram of the laser processing equipment provided in the embodiments of this application;

[0027] Figure 6 This is another structural schematic diagram of the laser processing equipment provided in the embodiments of this application.

[0028] Explanation of key figure labels:

[0029] 101. Controller; 102. Laser; 103. Trigger signal input interface; 104. Feedback signal output interface; 105. Optical shutter; 106. Beam shaping mechanism; 107. Photoelectric conversion device; 108. Reflector; 109. Laser processing head; 111. Processing table;

[0030] 200. Workpiece;

[0031] 301. Memory; 302. Processor; 303. Bus; 304. Transceiver; 305. Bus interface; 306. User interface; 307. Operating system; 308. Application program. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0033] It should be understood that "multiple" as mentioned in this application refers to two or more. In the description of this application, unless otherwise stated, " / " indicates "or," for example, A / B can mean A or B; "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist, for example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Furthermore, to facilitate a clear description of the technical solutions of this application, the terms "first," "second," etc., are used to distinguish identical or similar items with essentially the same function and effect. Those skilled in the art will understand that the terms "first," "second," etc., do not limit the quantity or execution order, and that "first," "second," etc., do not necessarily imply differences.

[0034] Laser processing is a method that uses a high-energy-density laser beam to locally irradiate materials, causing them to melt, vaporize, or undergo physicochemical changes to achieve precision processing such as cutting, drilling, welding, pattern ablation, or surface treatment. Due to its advantages of being non-contact, highly precise, and highly controllable, it has been widely applied in various technical fields such as semiconductor manufacturing, printed circuit boards (PCBs), display panels, glass substrates, ceramic substrates, and microelectronic packaging.

[0035] Glass substrates, with their high Young's modulus, low coefficient of thermal expansion (CTE), excellent surface flatness, and good electrical properties, are gradually becoming an ideal material choice for advanced packaging with high interconnect density, especially suitable for ultra-large size (>120mm×120mm) and ultra-thin thickness (<50μm) packaging structures. Laser drilling can be used to create through-glass vias (TGVs) on glass substrates.

[0036] In related technologies, due to the thermal sensitivity of the materials themselves and the slight fluctuations in laser parameters (such as power, pulse width, repetition frequency, etc.), through-hole defects often occur during laser drilling. These defects include the failure to form through-holes in some locations, or the failure of hole diameter and morphology to meet design requirements. These defects are usually not visible to the naked eye. If they are not detected and addressed in time, they may cause open circuits, short circuits, or electrical failures in subsequent metal filling, electroplating, or encapsulation processes, severely impacting product yield and reliability. To address this, several solutions have emerged, such as dual-pulse drilling and automated optical inspection (AOI). While dual-pulse drilling, relying on redundant laser emission, can improve the probability of through-hole formation to some extent, it cannot handle root causes such as laser source failure or excitation anomalies. If the laser fails to emit, both pulses will be unsuccessful. Furthermore, this method significantly increases the burden on laser processing equipment and sacrifices processing cycle time, and lacks a real-time feedback mechanism, making it impossible to establish a quality closed loop. Post-processing automated optical inspection (API) is typically performed after glass etching. Defects detected cannot be repaired, and due to the extremely small aperture of glass vias (approximately 5 micrometers), each API image can only cover about 100 vias. This limits the inspection speed and efficiency, making it difficult to cover millions of high-density vias and prone to false positives and missed detections. Neither of these methods can meet the packaging requirements of high yield and low tolerance.

[0037] Therefore, this application provides a laser processing defect monitoring method, electronic device, computer-readable storage medium, and laser processing equipment to solve the problems in related technologies. The laser processing defect monitoring method, glass substrate laser processing method, electronic device, computer-readable storage medium, and laser processing equipment provided in this application will be described in detail below with reference to the accompanying drawings.

[0038] Combination Figure 1 and Figure 4 As shown in the embodiments of this application, the laser processing defect monitoring method may include at least some or all of the following steps.

[0039] Step S100: Obtain the emission parameter information of the laser pulse. A laser pulse is a discontinuous laser beam that releases a certain amount of energy within a certain time period, characterized by short duration, high energy density, and high peak power. The duration of a single laser pulse is also called the laser pulse width, which includes time scales on the order of nanoseconds (ns), picoseconds (ps), or femtoseconds (fs). In step S101, by obtaining the emission parameter information of each laser pulse emitted by the laser 102, monitoring can be achieved at the source of processing the workpiece 200 (e.g., a glass substrate), thus enabling detailed data tracking of each laser pulse.

[0040] Step S200: Detect the emission parameter information according to preset conditions to determine the emission status of the laser pulse. After acquiring the emission parameter information of each laser pulse, determine the relationship between the emission parameter information and the preset conditions to determine whether the emission parameter information is normal or abnormal, thereby determining whether the emission status of the corresponding laser pulse is normal or abnormal. This enables real-time monitoring, timely acquisition of processing data status at each processing position on the workpiece 200, and subsequent determination of whether laser processing defects may exist at each processing position.

[0041] Step S300: Record the emission status and spatiotemporal processing data of the laser pulses. The spatiotemporal processing data includes the processing position coordinates corresponding to the laser pulses. After obtaining the emission parameter information corresponding to the emission status of each laser pulse, the emission status can be saved to record the emission status. Each laser pulse has corresponding processing position coordinates, which can also be saved for subsequent operations, such as re-inspection or compensation (i.e., repair). The re-inspection operation can be performed through post-processing inspection, for example, by using a post-processing AOI (Automated Optical Inspection) system to re-inspect the processing position coordinates corresponding to the laser pulses with abnormal emission. The re-inspection helps determine whether compensation processing is needed for the leak location.

[0042] Compared with the dual-pulse drilling method and post-processing automatic optical inspection techniques in related technologies, the laser processing defect monitoring method of this application effectively realizes the transformation from post-process inspection to process prediction quality control and can achieve closed-loop feedback control. This laser processing defect monitoring method utilizes the emission parameter information of laser pulses for detection, allowing real-time monitoring at the source of laser processing. It promptly determines whether the laser pulse emission is abnormal during processing, quickly marking the problem location when a defect occurs, significantly shortening the defect detection time, reducing yield loss due to defect propagation, and minimizing the risk of failure in subsequent processes. Furthermore, by directly monitoring the emission parameter information of laser pulses, this application eliminates the need for optical scanning of each through-hole, significantly improving detection speed and covering large-scale through-hole processing, greatly enhancing detection efficiency and providing reliable assurance for micro-machining fields (such as TGV processing on glass and ceramic substrates). Moreover, by recording the emission state of the laser pulses and the corresponding processing position coordinates, this application can form a complete processing data chain, facilitating subsequent re-inspection and compensation operations.

[0043] In some embodiments, in step S100, the laser pulse emission parameter information can be acquired by a signal monitoring component, which may include a photoelectric conversion device 107 for acquisition, or the signal monitoring component may also include an electrical signal detector for acquisition; alternatively, the photoelectric conversion device 107 and the electrical signal detector may be used together for acquisition, and then the analog-to-digital converter (ADC) receives the analog signal output by the photoelectric conversion device 107 and / or the analog signal output by the electrical signal detector. The ADC converts the analog signal into a processable digital signal, and the controller 101 receives the digital signal and acquires the laser pulse emission parameter information based on the digital signal. The controller 101 may include a processor.

[0044] In some embodiments, in step S300, recording the emission state may only record the result of an emission anomaly, or it may record both the result of normal emission and the result of an emission anomaly. As for the spatiotemporal processing data of the laser pulses, it may only record the spatiotemporal processing data of the laser pulses corresponding to the emission anomaly; or it may record both the spatiotemporal processing data of the laser pulses corresponding to the emission anomaly and the spatiotemporal processing data of the laser pulses corresponding to the normal emission. It should be noted that the recording of spatiotemporal processing data is not limited to step S300; it may also be performed in step S100 or synchronously during the execution of step S200.

[0045] See Figure 2 As shown, in some embodiments, the method for obtaining laser pulse emission parameter information in step S100 includes:

[0046] Step S101: Obtain laser pulse output parameters, including basic parameters. These basic parameters can be used to determine whether a laser pulse exists at a specific moment. The basic parameters may include the laser pulse amplitude and / or pulse width. By monitoring these parameters in real time and combining them with preset conditions to identify anomalies, abnormal states of the laser pulse and defects that may occur during processing, such as leaks, can be efficiently and accurately identified. For example, the laser pulse output parameters are optical signal parameters output by the laser 102, and are mainly acquired through the photoelectric conversion device 107. The basic parameters may include only the laser pulse amplitude, only the pulse width, or both. It is understood that the above parameter combinations are not limited to the examples listed, and can be flexibly configured and selected according to different laser processing techniques or processing quality requirements.

[0047] In step S101, the laser pulse output parameters also include extended parameters. These extended parameters include at least one selected from the group consisting of the laser pulse repetition frequency, beam direction, spot energy distribution, and pulse intensity. This allows for the detection of the laser pulse output quality. It should be noted that the specific parameters in the laser pulse output parameters are not limited to the six types mentioned above; they can also include peak power, average power, laser wavelength, and polarization state. Thus, different parameters or combinations thereof can be set or adjusted according to the processing object, material properties, and process requirements to achieve optimized control of laser processing quality.

[0048] In some embodiments, the method for obtaining laser pulse output parameters in step S101 includes: step S1011, obtaining laser pulse output parameters at a monitoring position along the transmission path of the laser pulse. By acquiring parameters along the transmission path of the laser pulse, the characteristics of the laser acting on the workpiece 200 can be more accurately reflected. Furthermore, monitoring along the transmission path allows for real-time acquisition of parameter changes during processing, enabling timely detection of laser pulse anomalies. Additionally, since each laser pulse is associated with the processing position coordinates, potential processing defects, such as perforations, can be precisely located.

[0049] In some embodiments, the monitoring position includes at least one selected from the group consisting of an initial monitoring position and subsequent monitoring positions; the initial monitoring position is set at the main output end of the laser 102, and the subsequent monitoring position is set between the optical shutter 105 and the laser processing head 109. Thus, the initial monitoring position can detect whether the laser 102 is outputting stably and record the raw data of the laser pulse; the subsequent monitoring position can check whether the optical shutter 105 causes energy loss or pulse truncation, and can also detect the quality of the shaped pulse (such as light intensity uniformity) to evaluate the processing effect. This segmented monitoring allows for precise location of the source of anomalies, reducing false positives and missed detections. For example, the monitoring position may include any one or two of the above; for instance, the monitoring position may include only the initial monitoring position, or only the subsequent monitoring position, or both the initial and subsequent monitoring positions; furthermore, the number of subsequent monitoring positions may be one, two, three, four, or five, and this application does not limit this. The transmission path of the laser pulse can be sequentially arranged as laser 102, optical shutter 105, beam shaping mechanism 106, and laser processing head 109; a subsequent monitoring position can be set between optical shutter 105 and beam shaping mechanism 106; a subsequent monitoring position can also be set between beam shaping mechanism 106 and laser processing head 109; for the initial monitoring position and the subsequent monitoring position, the laser pulse output parameters acquired at each position can be the same or different. For example, the laser pulse output parameters acquired at the initial monitoring position can include basic parameters; while the laser pulse output parameters acquired at the subsequent monitoring position can include basic parameters and extended parameters. This allows monitoring of laser pulse energy attenuation, spot drift, and other abnormal behaviors during transmission. A photoelectric conversion device 107 (see [reference]) can be installed at the initial monitoring position and the subsequent monitoring position, respectively. Figure 5 (As shown).

[0050] It should be noted that the monitoring location is not limited to the examples listed. Specific locations can be flexibly configured and selected based on different laser processing techniques or quality requirements. Furthermore, the monitoring location is not limited to the specific positions mentioned above; it can also be set at other locations in the laser pulse transmission path as needed, such as between the beam splitter and the galvanometer.

[0051] See Figure 2 As shown, in some embodiments, the method for obtaining the emission parameter information of the laser pulse in step S100 further includes:

[0052] Step S102: Obtain laser pulse control signal parameters, wherein the laser pulse control signal parameters include at least one selected from the group consisting of trigger signal parameters and feedback signal parameters. Since the laser 102 used in laser processing only emits a laser pulse when it receives a trigger signal; if the trigger signal does not reach the laser source, it is considered that the laser 102 has not emitted a laser pulse. Therefore, monitoring the trigger signal and feedback signal can achieve closed-loop monitoring to accurately locate the source of the anomaly, reducing false alarms and missed detections. For example, the laser pulse control signal parameters are electrical signal parameters, which are mainly acquired through an electrical signal detector; the trigger signal parameters are used for laser trigger control, while the feedback signal parameters are based on the operating state of the laser 102; the laser pulse control signal parameters include trigger signal parameters and feedback signal parameters.

[0053] It should be noted that there is no fixed execution order between steps S101 and S102. They can be executed in parallel or selectively executed sequentially according to specific implementation requirements.

[0054] In some embodiments, in step S102, the trigger signal parameters include the amplitude and repetition frequency of the trigger signal that triggers the laser pulse; the feedback signal parameters include the amplitude and repetition frequency of the feedback signal corresponding to the laser pulse. By monitoring the amplitude and repetition frequency of the trigger signal and the amplitude and repetition frequency of the feedback signal, it can be determined whether the laser 102 is working as expected, thereby achieving closed-loop monitoring to accurately locate the source of anomalies and reduce false alarms and missed detections. For example, in a laser processing device, the amplitude and repetition frequency of the trigger signal can be acquired at the trigger signal input interface 103 of the laser 102; while the amplitude and repetition frequency of the feedback signal can be acquired at the feedback signal output interface 104 of the laser 102.

[0055] See Figure 2 As shown, in some embodiments, in step S200, the method for detecting emission parameter information according to preset conditions to determine the emission state of the laser pulse includes:

[0056] Step S201: Compare the emission parameter information with preset parameter information to determine whether the emission parameter information meets the preset conditions. If the emission parameter information meets the preset conditions, the emission state of the laser pulse is determined to be normal; if the emission parameter information does not meet the preset conditions, the emission state of the laser pulse is determined to be abnormal. By monitoring the laser pulse control signal parameters and laser pulse output parameters and comparing them with preset parameter information, real-time anomaly identification can be achieved. For example, the emission parameter information includes any one or more of the following monitored parameters: pulse intensity, pulse width, pulse waveform, light intensity distribution, amplitude and repetition frequency of the trigger signal, and amplitude and repetition frequency of the feedback signal; while the preset parameter information includes preset threshold ranges corresponding to the monitored parameters of the emission parameter information. It should be noted that in some other possible embodiments, the emission state of the laser pulse is not limited to two types: normal emission and abnormal emission. The emission state can also be divided into three types: normal emission, slight emission abnormality, and severe emission abnormality, with each laser pulse's emission state being any one of these.

[0057] In step S200, after acquiring the monitoring parameter, the monitoring parameter is compared with its corresponding preset threshold range: if the monitoring parameter is within its own preset threshold range, it is determined to be a normal parameter and is in a normal state; if the monitoring parameter is not within its own preset threshold range, it is determined to be an abnormal parameter and is in an abnormal state. Thus, the state of each monitoring parameter is determined, i.e., a normal state or an abnormal state. It should be noted that in some other possible embodiments, the determination result of the monitoring parameter can also be a multi-level state, such as a normal state, a critical state, and an abnormal state. For monitoring parameters in a critical state, a preset strategy can be used to determine whether to consider them as abnormal parameters, or to enter a pending judgment state and make a judgment based on subsequent trends, thereby improving the accuracy and robustness of emission anomaly identification.

[0058] In step S200, statistics can be performed based on whether each monitoring parameter is abnormal. Furthermore, anomaly determination can be made by combining the corresponding acquisition location (i.e., the initial monitoring location or subsequent monitoring location) or interface location (the trigger signal input interface 103 or the feedback signal output interface 104 of the laser 102). Since each acquisition location can have one or more different monitoring parameters, and the number of monitoring parameters contained in each acquisition location varies, and the monitoring parameters differ between different interface locations, different determination rules can be set according to actual needs to determine whether the transmission parameter information meets or does not meet preset conditions. For example, any of the following strategies can be used:

[0059] Strategy 1: Count the number of abnormal parameters based on the overall number of all monitored parameters. For example, only when the number of abnormal parameters reaches a preset threshold (such as two or all) is it determined that the emission parameter information does not meet the preset conditions, thus identifying an emission anomaly and realizing differentiated judgment logic for different laser processing application scenarios.

[0060] Strategy 2: Count the number of abnormal parameters according to the acquisition location and interface location. For example, the sources of each monitoring parameter include the initial monitoring location, subsequent monitoring location, the trigger signal input interface 103 of the laser 102, and the feedback signal output interface 104. The trigger signal input interface 103 and the feedback signal output interface 104 of the laser 102 are combined and referred to as the electrical signal interface. For the initial monitoring location, subsequent monitoring location, and electrical signal interface, the number of abnormal parameters can be set as needed to determine whether they are normal or abnormal. That is, the initial monitoring location is determined to be an abnormal or normal location, the subsequent monitoring location is determined to be an abnormal or normal location, and the electrical signal interface is determined to be a normal or abnormal interface. Then, based on the state of the initial monitoring location, subsequent monitoring location, and electrical signal interface, it is determined whether the transmission parameter information meets or does not meet the preset conditions. For ease of description, the initial monitoring location is represented by A, the subsequent monitoring location by B, and the electrical signal interface by C; the normal location and normal interface are both represented by T, and the abnormal location and abnormal interface are both represented by F. Under the premise of Strategy 2, the following two scenarios are also possible:

[0061] Scenario 1: If A, B, and C are all T, then the emission parameter information meets the preset conditions, thus determining that the emission is normal. If any one of A, B, and C is F, then the emission parameter information does not meet the preset conditions, thus determining that the emission is abnormal. The processing position corresponding to the laser pulse is marked as a potential leak point and enters the subsequent re-inspection or compensation process.

[0062] Scenario 2: If C is T, and at least one of A and B is T, then the emission parameter information meets the preset conditions, thus determining that the emission is normal. If at least two of A, B, and C are F, then the emission parameter information does not meet the preset conditions, thus determining that the emission is abnormal. The processing position corresponding to the laser pulse is marked as a potential leak point and enters the subsequent re-inspection or compensation process. If both A and B are T, and C is F, then the emission parameter information does not meet the preset conditions, thus determining that the emission is abnormal. The processing position corresponding to the laser pulse is marked as a potential leak point and enters the subsequent re-inspection or compensation process.

[0063] Table 1 shows the comparative data of emission anomalies in scenarios one and two (taking 1.04 million vias per board as an example):

[0064]

[0065] As shown in Table 1, in scenario two, when at least two of A, B, and C are F, and when both A and B are T and C is F (i.e., under emission anomaly), the average number of false alarm holes per board is approximately 9.6. In scenario one, when any one of A, B, and C is F (i.e., under emission anomaly), the average number of false alarm holes per board is approximately 28.8. Therefore, scenario two is more inclined towards a balance between throughput and false alarms, suitable for conventional yield requirements; scenario one is suitable for the processing and inspection of high-precision critical components. Independent monitoring of A, B, and C enables triple redundancy judgment, achieving quality monitoring and anomaly marking for each laser pulse throughout the entire process from laser pulse emission and energy transmission to processing response, significantly improving defect screening capabilities.

[0066] It should be noted that in practical applications, two different options, Scenario 1 and Scenario 2, can be set to meet different processing requirements. Furthermore, since different combinations of monitoring parameter settings will produce different sensitivities in determining the emission status, thus affecting the accuracy and consistency of the emission status judgment, different sensitivities can be set according to different processing requirements in practical applications.

[0067] In some embodiments, the spatiotemporal machining data also includes the emission timestamp of the laser pulse and a unique identifier corresponding to the laser pulse. Since the machining position coordinates in the spatiotemporal machining data can accurately locate the location of machining anomalies, such as defective through-holes, while the emission timestamp records the machining sequence, and the unique identifier ensures data uniqueness, these three pieces of data can together construct a complete machining data chain. For example, if an anomaly is detected in a particular laser pulse, the corresponding timestamp and coordinates can be found through the unique identifier, allowing for precise location of the defective through-hole. For instance, the emission timestamp indicates that each laser pulse has a specific emission time; and the unique identifier is a unique number assigned to each laser pulse.

[0068] In the embodiments of this application, the laser processing defect monitoring method can be applied to various laser processing technologies, including laser drilling, laser cutting, laser patterning, or laser welding. Thus, the laser processing defect monitoring method provided in this application can detect defects such as leaks (incomplete penetration or substandard hole diameter) in laser drilling; it can also detect defects such as incomplete cutting or uneven kerf in laser cutting; it can also detect defects such as uneven line width or insufficient depth in laser patterning; and it can also detect defects such as porosity or cracks in laser welding.

[0069] This application also provides a method for laser processing of glass substrates, used to process glass substrates; the method for laser processing of glass substrates may include the laser processing defect monitoring method as described in any of the above embodiments, and includes at least some or all of the following steps.

[0070] Step S400: A laser pulse is emitted onto the glass substrate. The laser pulse is used to modify the glass substrate. Laser modification refers to using a high-energy ultrashort pulse laser (laser pulse width less than or equal to picoseconds, usually picosecond or femtosecond lasers) focused inside a transparent solid material (such as glass substrate, sapphire, etc.) to induce changes in refractive index, crystal structure reconstruction, or the formation of metastable phases in local areas of the material. This alters the chemical or physical properties of the region, thereby providing selectivity for subsequent chemical etching processes or providing a pretreatment state for other subsequent processing.

[0071] In step S400, the method for modifying the glass substrate includes forming a pre-through hole on the glass substrate.

[0072] Step S500 involves performing a chemical etching process on the pre-via to form a through-glass via (TGV). Step S500 follows step S400. However, steps in the laser processing defect monitoring method can be performed during step S400.

[0073] Before performing step S500, the glass substrate laser processing method further includes step S401.

[0074] Step S401: When an abnormal laser pulse emission is detected, the processing position coordinates corresponding to the abnormal laser pulse are re-inspected by the subsequent AOI (Automated Optical Inspection) system to determine whether compensation processing is needed at the processing position coordinates (leakage defect location). If compensation processing is determined to be needed, it is performed using the laser pulse, and then step S500 is performed. This compensation processing achieves zero leaks. If compensation processing is determined not to be needed, it indicates that the abnormal emission was a false alarm, and the process can proceed to the next step S500. Compensation processing uses the laser pulse to reprocess the leak defect location to form a pre-through hole that meets the requirements.

[0075] The glass substrate laser processing method provided in this application, compared with the dual-pulse drilling method and subsequent automatic optical inspection techniques in related technologies, achieves a shift from post-inspection to process prediction quality control and enables closed-loop feedback control. This glass substrate laser processing method utilizes the emission parameter information of the laser pulse for detection, allowing real-time monitoring at the source of laser processing. During processing, it promptly identifies any abnormalities in laser pulse emission, quickly marks the problem location when defects occur, significantly shortens defect detection time, reduces yield loss due to defect propagation, and minimizes the risk of failure in subsequent processes. Furthermore, by directly monitoring the emission parameter information of the laser pulse, this application eliminates the need for individual optical scanning of each through-hole, greatly improving detection speed and covering large-scale through-hole processing, significantly enhancing detection efficiency and providing reliable assurance for micro-machining fields (such as TGV processing on glass and ceramic substrates). Moreover, by recording the emission state of the laser pulse and the corresponding processing position coordinates, this application can form a complete processing data chain, facilitating subsequent re-inspection and compensation operations.

[0076] See Figure 3 As shown, this application embodiment also provides an electronic device, which includes a memory 301, a processor 302, and a computer program stored in the memory 301 and executable on the processor 302. The memory 301 and the processor 302 are connected. When the computer program is executed by the processor 302, it implements the various processes of the above-described laser processing defect monitoring method embodiment and achieves the same technical effect. To avoid repetition, it will not be described again here.

[0077] In some embodiments, the electronic device further includes a bus 303, a transceiver 304, a bus interface 305, and a user interface 306; the memory 301 and the processor 302 are respectively connected via the bus 303.

[0078] When a computer program is executed by processor 302, it performs the following steps:

[0079] Step S100: Obtain the emission parameter information of the laser pulse.

[0080] Step S200: Detect the emission parameter information according to preset conditions to determine the emission state of the laser pulse.

[0081] Step S300: Record the emission state and the spatiotemporal processing data of the laser pulse. The spatiotemporal processing data includes the processing position coordinates corresponding to the laser pulse.

[0082] Optionally, when the computer program is executed by the processor 302 in step S100, the processor 302 specifically implements the following steps:

[0083] Step S101: Obtain laser pulse output parameters, wherein the laser pulse output parameters include at least one selected from the group consisting of pulse intensity, pulse width, pulse waveform and light intensity distribution.

[0084] Optionally, when the computer program is executed by the processor 302 in step S101, the processor 302 specifically implements the following steps:

[0085] Step S1011: Collect the laser pulse output parameters at the monitoring position on the transmission path of the laser pulse.

[0086] Optionally, when the computer program is executed by the processor 302 in step S100, the processor 302 specifically implements the following steps:

[0087] Step S102: Obtain laser pulse control signal parameters, wherein the laser pulse control signal parameters include at least one selected from the group consisting of trigger signal parameters and feedback signal parameters.

[0088] Optionally, when the computer program is executed by the processor 302 in step S200, the processor 302 specifically implements the following steps:

[0089] Step S201: Compare the emission parameter information with the preset parameter information to determine whether the emission parameter information meets the preset conditions. If the emission parameter information meets the preset conditions, the emission state of the laser pulse is determined to be normal; if the emission parameter information does not meet the preset conditions, the emission state of the laser pulse is determined to be abnormal.

[0090] In some embodiments, transceiver 304 is used to receive and send data under the control of processor 302.

[0091] In some embodiments, a bus architecture (represented by bus 303) may be used, which may include any number of interconnected buses and bridges, and which connects various circuits including one or more processors represented by processor 302 and memory represented by memory 301.

[0092] When the computer program is executed by the processor 302, it can also perform the following steps:

[0093] Step S400: Emit laser pulses to the glass substrate. The laser pulses are used to modify the glass substrate to form pre-through holes on the glass substrate.

[0094] Step S500: Perform a chemical etching process on the pre-through hole to form a glass through hole.

[0095] Optionally, the computer program is executed by the processor 302 after S400 and before S500, causing the processor 302 to perform the following steps:

[0096] Step S401: When the emission state of the laser pulse is detected to be abnormal, the processing position coordinates corresponding to the abnormal laser pulse are re-inspected by the AOI system in the subsequent process.

[0097] Bus 303 represents one or more of several types of bus architectures, including memory buses and memory controllers, peripheral buses, Accelerated Graphics Port (AGP), processors, or local buses using any bus architecture from various bus architectures. By way of example and not limitation, such architectures include: Industry Standard Architecture (ISA) buses, Micro Channel Architecture (MCA) buses, Enhanced ISA (EISA) buses, Video Electronics Standards Association (VESA) buses, and Peripheral Component Interconnect (PCI) buses.

[0098] Processor 302 can be an integrated circuit chip with signal processing capabilities. In implementation, the steps of the above method embodiments can be completed by integrated logic circuits in the processor hardware or by instructions in software form. The processors mentioned above include: general-purpose processors, central processing units (CPUs), network processors (NPs), digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), complex programmable logic devices (CPLDs), programmable logic arrays (PLAs), microcontroller units (MCUs) or other programmable logic devices, discrete gates, transistor logic devices, and discrete hardware components. They can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. For example, the processor can be a single-core processor or a multi-core processor, and the processor can be integrated on a single chip or located on multiple different chips.

[0099] Processor 302 can be a microprocessor or any conventional processor. The method steps disclosed in the embodiments of this application can be directly executed by a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software modules can reside in readable storage media known in the art, such as Random Access Memory (RAM), Flash Memory, Read-Only Memory (ROM), Programmable Read-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM), registers, etc. The readable storage medium is located in the memory, and the processor reads the information in the memory and, in conjunction with its hardware, completes the steps of the above method.

[0100] Bus 303 can also connect various other circuits, such as peripheral devices, voltage regulators, or power management circuits. Bus interface 305 provides an interface between bus 303 and transceiver 304, all of which are well known in the art. Therefore, the embodiments of this application will not describe them further.

[0101] Transceiver 304 can be a single element or multiple elements, such as multiple receivers and transmitters, providing a unit for communicating with various other devices over a transmission medium. For example, transceiver 304 receives external data from other devices and transmits data processed by processor 302 to other devices. Depending on the nature of the computer system, a user interface 306 may also be provided, such as a touchscreen, physical keyboard, monitor, mouse, speaker, microphone, trackball, joystick, or stylus.

[0102] It should be understood that, in this embodiment of the application, memory 301 may further include memory remotely configured relative to processor 302, and such remotely configured memory can be connected to a server via a network. One or more portions of the aforementioned network may be an ad hoc network, intranet, extranet, virtual private network (VPN), local area network (LAN), wireless local area network (WLAN), wide area network (WAN), wireless wide area network (WWAN), metropolitan area network (MAN), Internet, public switched telephone network (PSTN), ordinary old-style telephone service (POTS), cellular telephone network, wireless network, Wi-Fi network, and combinations of two or more of the aforementioned networks. For example, cellular telephone networks and wireless networks can be Global System for Mobile Communications (GSM), Code Division Multiple Access (CDMA), WiMAX, General Packet Radio Service (GPRS), Wideband Code Division Multiple Access (WCDMA), Long Term Evolution (LTE), LTE Frequency Division Duplex (FDD), LTE Time Division Duplex (TDD), Advanced Long Term Evolution (LTE-A), Universal Mobile Telecommunications System (UMTS), Enhanced Mobile Broadband (eMBB), Massive Machine Type Communication (mMTC), Ultra Reliable Low Latency Communications (uRLLC), etc.

[0103] It should be understood that the memory 301 in the embodiments of this application may be volatile memory or non-volatile memory, or may include both volatile memory and non-volatile memory. Non-volatile memory includes: read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory.

[0104] Volatile memory includes random access memory (RAM), which serves as an external cache. By way of example, but not limitation, many forms of RAM are available, such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous linked dynamic random access memory (Synchlink DRAM, SLDRAM), and direct memory bus RAM (DRRAM). The memory 301 of the electronic device described in this application embodiment includes, but is not limited to, the above and any other suitable types of memory.

[0105] In this embodiment, memory 301 stores the following elements of operating system 307 and application 308: executable modules, data structures, or subsets thereof, or extended sets thereof.

[0106] Specifically, the operating system 307 includes various system programs, such as the framework layer, core library layer, and driver layer, used to implement various basic business functions and handle hardware-based tasks. The application program 308 includes various applications, such as a media player and a browser, used to implement various application functions. Programs implementing the methods of the embodiments of this application may be included in the application program 308. The application program 308 includes applets, objects, components, logic, data structures, and other computer system executable instructions that perform specific tasks or implement specific abstract data types.

[0107] In addition, this application also provides a computer-readable storage medium storing a computer program thereon. When the computer program is executed by a processor, it implements the various processes of the above-described laser processing defect monitoring method and / or glass substrate laser processing method embodiments, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0108] Computer-readable storage media include: permanent and non-permanent, removable and non-removable media, which are tangible devices capable of retaining and storing instructions for use by an instruction execution device. Computer-readable storage media include: electronic storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, and any suitable combination thereof. Computer-readable storage media include: phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), non-volatile random access memory (NVRAM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, optical disc read-only memory (CD-ROM), digital versatile optical disc (DVD) or other optical storage, magnetic tape storage, magnetic disk storage or other magnetic storage devices, memory sticks, mechanical encoding devices (e.g., punched cards or raised structures in grooves on which instructions are recorded), or any other non-transfer medium that can be used to store information accessible by a computing device. As defined in the embodiments of this application, computer-readable storage media do not include temporary signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses passing through fiber optic cables), or electrical signals transmitted through wires.

[0109] All or part of the technical solutions of the embodiments of this application can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (including a personal computer, server, data center, or other network device) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code as listed above.

[0110] See Figure 4As shown, this application embodiment also provides a laser processing device. This laser processing device uses the laser processing defect monitoring method, glass substrate laser processing method, electronic device, or computer storage medium from any of the above embodiments to detect processing defects. The laser processing device includes: a laser 102, an optical shutter 105, and a laser processing head 109 arranged sequentially along the optical path. The laser 102 is used to emit laser pulses; the laser processing device also includes a signal monitoring component and a controller 101; the signal monitoring component is used to collect the emission signal of the laser pulse; the controller 101 is used to obtain the emission parameter information of the laser pulse based on the emission signal, and to detect the emission parameter information according to preset conditions to determine the emission state of the laser pulse; the controller 101 is also used to record the emission state and the spatiotemporal processing data of the laser pulse, the spatiotemporal processing data including the processing position coordinates corresponding to the laser pulse.

[0111] Compared to related technologies where automated optical inspection is performed after etching, leading to defect accumulation due to lag, the laser processing equipment provided in this application utilizes the emission parameters of laser pulses for detection. This allows for real-time monitoring at the source of laser processing, enabling immediate assessment of abnormal laser pulse emission during processing. Problem locations can be quickly marked when defects occur, significantly shortening defect detection time, reducing yield loss due to defect propagation, and minimizing the risk of failure in subsequent processes. Furthermore, by directly monitoring the emission parameters of laser pulses, this application eliminates the need for individual optical scanning of vias, greatly increasing detection speed and covering large-scale via processing, significantly improving detection efficiency and providing reliable assurance for micromachining fields (such as TGV processing on glass and ceramic substrates). Moreover, by recording the emission state of laser pulses and the corresponding processing position coordinates, this application can form a complete processing data chain, facilitating subsequent re-inspection and compensation operations.

[0112] In some embodiments, the emission signal includes the output optical signal of the laser pulse and a control signal; the controller is used to obtain laser pulse output parameters based on the output optical signal and to obtain laser pulse control signal parameters based on the control signal. Exemplarily, the laser processing module further includes an analog-to-digital converter; the signal monitoring component and the analog-to-digital converter are electrically connected to the controller 101; the controller 101 is also electrically connected to the laser 102; the emission state of the laser pulse is either normal emission or abnormal emission. The signal monitoring component is used to acquire the emission signal of the laser pulse and output an analog signal; the analog-to-digital converter is used to convert the analog signal into a digital signal; the controller 101 is used to obtain laser pulse emission parameter information based on the digital signal.

[0113] See Figure 4As shown, in some embodiments, the signal monitoring component includes a photoelectric conversion device 107, which is used to detect the output optical signal of the laser pulse and output a corresponding analog signal; the main output end of the laser 102 is provided with the photoelectric conversion device 107; the photoelectric conversion device 107 is also provided between the laser processing head 109 and the optical shutter 105. This allows for the detection of whether the laser 102 is outputting stably and the recording of the original data of the laser pulse; it also allows for the checking of whether the optical shutter 105 causes energy loss or pulse truncation. Thus, segmented monitoring can accurately locate the source of anomalies and reduce false alarms and missed detections. For example, by detecting the output optical signal, the presence and quality of the laser pulse can be determined. The main output end of the laser is the working end of the laser that outputs the laser pulse, and it is provided with an output coupling mirror or an output fiber optic interface to transmit the energy generated by the laser outward. The number of photoelectric conversion devices 107 provided at the main output end of the laser 102 can be one or two. When two are provided, the other type can be used as a backup to achieve redundancy. The photoelectric conversion device 107 includes at least one selected from the group consisting of a photodiode, a photoresistor, and a photomultiplier tube. The photodiode may be a PIN photodiode, an avalanche photodiode, a Schottky photodiode, a junction photodiode, or a multichannel array photodiode.

[0114] It should be noted that the acquisition of the output optical signal is not limited to the photoelectric conversion device 107, but can also be an image acquisition device, such as CMOS or CCD. By guiding the laser pulse to the test board for processing, the image acquisition device can be used to view and analyze the test structure in real time.

[0115] In some embodiments, the optical shutter acts as a switch in the optical path to control the emission or cessation of laser pulses. Laser processing equipment is used to process glass substrates; the laser processing head is the end effector of the laser processing equipment, primarily responsible for focusing the laser beam onto the workpiece's processing position to perform processing operations such as cutting, welding, drilling, and engraving. The laser processing head can be a Bezier head, and the laser can be an ultrafast laser emitting ultrafast laser light. Ultrafast lasers refer to lasers capable of producing extremely short pulse durations (typically on picosecond, femtosecond, or even shorter timescales). Its pulse width is generally around 10... -12 picosecond to 10 -15 It features high peak power and wide spectral bandwidth within the second (femtosecond) range.

[0116] See Figure 4As shown, in some embodiments, the laser processing equipment further includes a beam shaping mechanism 106; along the transmission direction of the laser pulse, the laser 102, the shutter 105, the beam shaping mechanism 106, and the laser processing head 109 are arranged sequentially. Exemplarily, the beam shaping mechanism (Beam Shaping System) in the laser processing equipment is used to change the spatial distribution, shape, or intensity distribution of the laser pulse to optimize the performance of laser processing or applications. It includes at least one or more combinations of pulse shaping components that perform Gaussian-to-flat-top processing on the laser beam (i.e., laser pulse), beam scaling components that perform beam expansion or contraction processing on the laser beam, and aperture components that adjust the obstruction of the beam edge. A photoelectric conversion device 107 is disposed between the shutter 105 and the beam shaping mechanism 106. The number of photoelectric conversion devices 107 disposed between the shutter 105 and the beam shaping mechanism 106 can be one or two. When two are disposed, the other type can be used as a backup to achieve redundancy. The photoelectric conversion device 107, located between the shutter 105 and the beam shaping mechanism 106, is spaced apart from the shutter 105 in the direction of laser pulse transmission and also spaced apart from the beam shaping mechanism 106.

[0117] See Figure 5 As shown, in some embodiments, a photoelectric conversion device 107 is disposed between the beam shaping mechanism 106 and the laser processing head 109, which can detect the quality of the shaped pulse (such as the uniformity of light intensity) and evaluate the processing effect. Exemplarily, the number of photoelectric conversion devices 107 between the beam shaping mechanism 106 and the laser processing head 109 can be one or two. When two are provided, the other can be used as a backup to achieve redundancy. The photoelectric conversion device 107 located between the beam shaping mechanism 106 and the laser processing head 109 is spaced apart from the beam shaping mechanism 106 and also spaced apart from the laser processing head 109 in the direction of laser pulse transmission.

[0118] It should be noted that the position of the photoelectric conversion device 107 is not limited to the above-mentioned position, and can also be set at other positions in the transmission path of the laser pulse.

[0119] See Figure 6 As shown, in some embodiments, the laser processing equipment further includes a reflector 108; the reflector 108 is disposed on the transmission path of the laser pulse and is used to adjust the transmission direction of the laser pulse as needed. It should be noted that the number of reflectors 108 on the transmission path of the laser pulse can be one or more.

[0120] See Figure 6As shown, in some implementations, the laser processing equipment also includes a processing table 111, which is used to support the workpiece 200. The laser processing equipment performs laser drilling on the workpiece 200 on the processing table 111. A signal monitoring component is used to determine the processing state of the laser drilling based on the output optical signal and / or control signal. Laser drilling refers to processing the workpiece using laser pulses to locally heat, melt, or even vaporize the workpiece, thereby forming a pre-through hole. The processing state of the laser drilling can refer to the emission state of the laser pulse. It is understood that the table surface of the processing table 111 can be provided with a planar moving mechanism as needed. The planar moving mechanism can include an X-axis moving module and a Y-axis moving module. The X-axis moving module is mounted on the Y-axis moving module and can include a linear slide rail. The Y-axis moving module can also include a linear slide rail. In this way, the X-axis moving module can be used to move the workpiece 200 in the X-axis direction, while the Y-axis moving module can be used to move the workpiece 200 in the Y-axis direction. The X-axis direction and the Y-axis direction are perpendicular.

[0121] In some embodiments, the laser pulse output parameters include basic parameters and extended parameters; the basic parameters are the laser pulse amplitude and / or pulse width; the basic parameters are used to determine the presence of a laser pulse. The extended parameters include at least one selected from the group consisting of the laser pulse repetition frequency, beam direction, spot energy distribution, and pulse intensity. The extended parameters are used to determine the quality of the laser pulse.

[0122] In some embodiments, the signal monitoring component includes an electrical signal detector, which is used to acquire the control signal of the laser pulse and output a corresponding analog signal; the control signal is an electrical signal. The control signal includes at least one selected from the group consisting of a trigger signal and a feedback signal; the emission parameter information includes: laser pulse control signal parameters, which include at least one selected from the group consisting of trigger signal parameters and feedback signal parameters. This monitoring of the trigger signal and feedback signal enables closed-loop monitoring to accurately locate the source of the anomaly, reducing false positives and missed detections. Exemplarily, the photoelectric conversion device 107 and the electrical signal detector are electrically connected to the controller 101, and there can be multiple analog-to-digital converters. The photoelectric conversion device 107 and the electrical signal detector each correspond to one analog-to-digital converter; the photoelectric conversion device 107 is electrically connected to its corresponding analog-to-digital converter, and the electrical signal detector is electrically connected to its corresponding analog-to-digital converter; the electrical signal detector includes a field-programmable gate array circuit and / or an analog-to-digital converter. The controller 101 is electrically connected to the trigger signal input interface 103 of the laser 102, and is also electrically connected to the feedback signal output interface 104 of the laser 102. The controller 101 sends a trigger signal to the laser 102 from the trigger signal input interface 103; the laser 102 sends a feedback signal to the controller 101 from its own feedback signal output interface 104. Thus, by setting an electrical signal detector at the trigger signal input interface 103 of the laser 102, the amplitude and repetition frequency of the trigger signal can be acquired; similarly, by setting an electrical signal detector at the feedback signal output interface 104 of the laser 102, the amplitude and repetition frequency of the feedback signal can be acquired.

[0123] It should be noted that when the electrical signal detector includes an analog-to-digital converter, the output of the acquired control signal is an analog signal, which can then be sent to the controller. It should also be noted that field-programmable gate array (FPGA) circuits are readily understood and implemented by those skilled in the art, and therefore will not be described in detail in the embodiments of this application.

[0124] In some embodiments, the trigger signal parameters include the amplitude and repetition frequency of the trigger signal that triggers the laser pulse; the feedback signal parameters include the amplitude and repetition frequency of the feedback signal corresponding to the laser pulse. By monitoring the amplitude and repetition frequency, it can be determined whether the laser 102 is working as expected, thereby achieving closed-loop monitoring to accurately locate the source of anomalies and reduce false alarms and missed detections.

[0125] In some embodiments, the spatiotemporal processing data also includes the emission timestamp of the laser pulse and a unique identifier corresponding to the laser pulse. For example, the processing position coordinates in the spatiotemporal processing data can accurately locate the location of processing anomalies, such as abnormal through-holes, while the emission timestamp records the processing sequence, and the unique identifier ensures data uniqueness. These three pieces of data can thus jointly construct a complete processing data chain. For instance, if an anomaly is detected in a particular laser pulse, the corresponding timestamp and coordinates can be found through the unique identifier, allowing for precise location of the defective through-hole. The emission information parameters, emission status, emission timestamp, corresponding unique identifier, and corresponding processing position coordinates for each laser pulse can be stored together. This allows all relevant data for each laser pulse to be found through the unique identifier, achieving complete pulse-by-pulse data recording and anomaly data tracing functionality.

[0126] In the description of this application, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0127] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A laser processing device, characterized in that, include: A laser, an optical shutter, and a laser processing head are arranged sequentially along the optical path; the laser is used to emit laser pulses. The laser processing equipment also includes a signal monitoring component; Wherein, the signal monitoring component is used to detect the output optical signal of the laser pulse, the signal monitoring component includes a photoelectric conversion device, the photoelectric conversion device is used to detect the output optical signal, and the main output terminal of the laser is provided with the photoelectric conversion device; and / or, the signal monitoring component is used to detect the control signal of the laser pulse, the signal monitoring component includes an electrical signal detector, the electrical signal detector is used to detect the control signal, the trigger signal input terminal interface of the laser is provided with the electrical signal detector, and the feedback signal output terminal interface of the laser is provided with the electrical signal detector.

2. The laser processing apparatus according to claim 1, wherein The photoelectric conversion device is disposed between the optical shutter and the laser processing head.

3. The laser processing apparatus according to claim 2, wherein The laser processing equipment also includes a beam shaping mechanism, wherein the laser, the optical shutter, the beam shaping mechanism and the laser processing head are arranged sequentially along the optical path; The photoelectric conversion device is disposed between the optical shutter and the beam shaping mechanism, and / or the photoelectric conversion device is disposed between the beam shaping mechanism and the laser processing head.

4. The laser processing apparatus according to claim 2 or 3, wherein The photoelectric conversion device is used to determine the presence and / or quality of the laser pulse by detecting the output optical signal; the photoelectric conversion device includes at least one selected from the group consisting of a photodiode, a photoresistor, and a photomultiplier tube.

5. The laser processing apparatus according to claim 4, wherein The photoelectric conversion device includes a photodiode; the photodiode is a PIN photodiode, avalanche photodiode, Schottky photodiode, junction photodiode, or multichannel array photodiode.

6. The laser processing apparatus according to any one of claims 1 to 3, wherein When the signal monitoring component is used to detect the control signal of the laser pulse, the control signal includes a trigger signal and a feedback signal; The electrical signal detector, located at the trigger signal input terminal interface, is used to detect the trigger signal; The electrical signal detector, located at the feedback signal output interface, is used to detect the feedback signal.

7. The laser processing apparatus according to any one of claims 1 to 3, wherein The laser processing equipment is used to process glass substrates; the laser processing head is a Bessel processing head, and the laser is an ultrafast laser that emits ultrafast laser light.

8. The laser processing apparatus according to claim 7, wherein The electrical signal detector includes a field-programmable gate array (FPGA) circuit and / or an analog-to-digital converter (ADC).

9. The laser processing apparatus according to any one of claims 1 to 3, wherein The laser processing equipment also includes a processing table, which is used to support the workpiece.

10. The laser processing equipment as described in claim 9, characterized in that, The laser processing equipment is used to perform laser drilling on the workpiece, and the signal monitoring component determines the processing status of the laser drilling based on the output optical signal and / or the control signal.

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