Thin film deposition profile adjustment device and chemical vapor deposition apparatus

Abstract

This application provides an APF thin film deposition profile adjustment device and a chemical vapor deposition (CVD) apparatus, including a fixed base and an adjustment mechanism. The adjustment mechanism includes a connecting base, adjustment blades, and a drive motor. The connecting base is connected to the fixed base and has a flow channel, the position of which corresponds to the position of a first through hole. Multiple adjustment blades are rotatably connected to the connecting base and used to adjust the aperture of the flow channel. The drive motor is connected to the multiple adjustment blades via a transmission assembly and is electrically connected to a control module in the CVD apparatus. The control module adjusts the aperture of the flow channel according to different deposition processes in the CVD apparatus. Without replacing the APF thin film deposition profile adjustment device, it can adapt to the required aperture of the flow channel in different deposition processes.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a thin film deposition profile adjustment device and a chemical vapor deposition equipment. Background Technology

[0002] In semiconductor manufacturing, as process nodes advance to 90 nanometers and below, the thickness of photoresist is continuously reduced to meet the demands of higher resolution patterning. However, excessively thin photoresist cannot provide sufficient etching resistance during the etching process, leading to a decrease in pattern transfer accuracy. To address this, the industry has introduced Advanced Patterning Film (APF) as an auxiliary mask layer. Its main component is amorphous carbon, which has a high etch selectivity and can replace photoresist in pattern formation during etching, and is ultimately removed through a photoresist stripping process. However, during the chemical vapor deposition of APF, reactants may penetrate into the wafer edge region, resulting in uneven APF deposition at the wafer edge. Furthermore, APF deposited at the wafer edge may be stripped off during subsequent photolithography and etching processes, causing particulate contamination and affecting device yield.

[0003] Currently, the industry typically uses a shielding ring to suppress APF deposition at the wafer edge. This shielding ring is located at the pumping liner above the wafer. During the deposition process, the heating plate rises, causing the shielding ring to press against the wafer edge region, blocking the entry of reactive gases and thus optimizing film uniformity.

[0004] When different process steps are performed within the same process chamber, the flow field distribution within the chamber will change significantly due to differences in parameters such as process pressure, reactant gas flow rate, and spray head height. To obtain the optimal film edge profile, the shielding distance of the shielding ring needs to be dynamically adjusted according to the flow field to compensate for the impact of flow field changes on the uniformity of edge deposition. However, in the prior art, the aperture of the shielding ring that allows reactant gas to pass through is a fixed value, which means that the size of this aperture cannot be adjusted. The only way to meet the aperture size requirements of different process steps is to replace the shielding ring with one of different aperture sizes. Utility Model Content

[0005] The purpose of this application is to provide a thin film deposition profile adjustment device to solve the technical problem that the aperture of the shielding ring in the prior art chemical vapor deposition equipment cannot be adjusted.

[0006] To achieve the above objectives, a first aspect of this application is to provide a thin film deposition profile adjustment device, applied within a chemical vapor deposition apparatus, comprising:

[0007] The mounting base is provided with a first through hole;

[0008] The adjustment mechanism includes a connecting seat, an adjusting blade, and a drive motor. The connecting seat is connected to the fixed seat, and the connecting seat is provided with a flow channel. The position of the flow channel corresponds to the position of the first through hole.

[0009] The number of adjusting blades is multiple, and all of the multiple adjusting blades are rotatably connected to the connecting seat for adjusting the orifice diameter of the flow channel;

[0010] The drive motor is connected to the fixed base and is driven by multiple adjusting blades through a transmission assembly. The drive motor is also electrically connected to the control module in the chemical vapor deposition equipment. The control module adjusts the aperture of the flow channel according to different deposition processes in the chemical vapor deposition equipment.

[0011] Optionally, the connector includes:

[0012] The first cover plate is connected to the fixed base and has a second through hole;

[0013] The second cover plate is spaced apart from the first cover plate and has a third through hole, and the third through hole is coaxial with the second through hole. The flow channel is formed by the second through hole and the third through hole.

[0014] The plurality of adjusting blades are rotatably connected between the first cover plate and the second cover plate.

[0015] Optionally, the adjusting blade is provided with a guide rod, and the first cover plate and / or the second cover plate is provided with a guide groove, and the guide rod is slidably connected in the guide groove.

[0016] Optionally, the guide groove extends in an arc shape.

[0017] Optionally, along the extending direction of the guide groove, the guide groove has opposing first limiting ends and second limiting ends;

[0018] When the guide rod on the plurality of adjusting blades abuts against the first limiting end on the corresponding guide groove, a first aperture is formed between the plurality of adjusting blades;

[0019] When the guide rod on the plurality of adjusting blades abuts against the second limiting end on the corresponding guide groove, a second aperture is formed between the plurality of adjusting blades;

[0020] The first aperture is smaller than the second aperture.

[0021] Optionally, the transmission assembly includes:

[0022] A toothed ring is located between the first cover plate and the second cover plate and rotates relative to the first cover plate and the second cover plate. The inner wall and the outer wall of the toothed ring are respectively provided with a plurality of first tooth structures and second tooth structures.

[0023] A drive gear is connected to the drive motor and meshes with the first tooth structure on the outer side of the gear ring;

[0024] There are multiple driven gears, each of which corresponds to a single adjusting blade. Each adjusting blade is connected to one of the driven gears, and all of the driven gears mesh with the second tooth structure.

[0025] Optionally, in the plurality of driven gears, each driven gear is rotatably connected to the corresponding adjusting blade;

[0026] Each driven gear is provided with a drive rod, and each adjusting blade is provided with a insertion hole. The drive rod on each driven gear is inserted into the insertion hole on the adjusting blade corresponding to the driven gear.

[0027] Optionally, in each driven gear, there are two drive rods, and the two drive rods are symmetrically arranged about the rotation axis of the driven gear.

[0028] Optionally, the outer sides of the first cover plate, the second cover plate, and the adjusting blade are all provided with a protective layer.

[0029] The beneficial effects of the thin film deposition profile adjustment device provided in this application are as follows: Compared with the prior art, the thin film deposition profile adjustment device provided in this application includes a fixed base and an adjustment mechanism. The adjustment mechanism includes a connecting base, adjustment blades, and a drive motor. The connecting base is connected to the fixed base and has a flow channel. The position of the flow channel corresponds to the position of the first through hole. There are multiple adjustment blades, and all of the multiple adjustment blades are rotatably connected to the connecting base for adjusting the aperture of the flow channel. The drive motor is connected to the multiple adjustment blades through a transmission component and is electrically connected to the control module in the chemical vapor deposition equipment. The control module adjusts the aperture of the flow channel according to different deposition processes in the chemical vapor deposition equipment. Without replacing the thin film deposition profile adjustment device, the thin film deposition profile adjustment device can be adapted to the aperture of the flow channel required in different deposition processes.

[0030] Secondly, this application provides a chemical vapor deposition apparatus, including...

[0031] A thin film deposition profile adjustment device, wherein the thin film deposition profile adjustment device is any one of the thin film deposition profile adjustment devices described above.

[0032] A heating plate is used to fix the target wafer and drive the target wafer toward or away from the thin film deposition profile adjustment device.

[0033] The beneficial effects of the chemical vapor deposition equipment provided in this application are as follows: Compared with the prior art, the chemical vapor deposition equipment provided in this application includes any of the above-mentioned thin film deposition profile adjustment devices. The thin film deposition profile adjustment device includes a fixed base and an adjustment mechanism. The adjustment mechanism includes a connecting base, adjustment blades, and a drive motor. The connecting base is connected to the fixed base and has a flow channel. The position of the flow channel corresponds to the position of the first through hole. There are multiple adjustment blades, and all of the multiple adjustment blades are rotatably connected to the connecting base for adjusting the aperture of the flow channel. The drive motor is driven by the multiple adjustment blades through a transmission component and is electrically connected to the control module in the chemical vapor deposition equipment. The control module adjusts the aperture of the flow channel according to different deposition processes in the chemical vapor deposition equipment. Without replacing the thin film deposition profile adjustment device, the thin film deposition profile adjustment device can be adapted to the aperture of the flow channel required in different deposition processes. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the APF thin film deposition profile adjustment device provided in the embodiments of this application;

[0036] Figure 2 A schematic diagram of the APF thin film deposition profile adjustment device provided in an embodiment of this application from another perspective;

[0037] Figure 3 This is a schematic diagram of the structure of the adjustment mechanism provided in the embodiments of this application;

[0038] Figure 4 This is a schematic diagram of the adjustment mechanism provided in an embodiment of this application from another perspective;

[0039] Figure 5 This is a schematic diagram of the guide groove structure used in the embodiments of this application;

[0040] Figure 6 This is a schematic diagram of the transmission assembly provided in an embodiment of this application;

[0041] Figure 7 for Figure 6 Enlarged view of the structure of section A in the middle.

[0042] The following are the labeling elements in the figure:

[0043] 10. Fixed base; 11. First through hole; 20. Adjustment mechanism; 21. Connecting base; 211. First cover plate; 2111. Second through hole; 212. Second cover plate; 2121. Third through hole; 213. Connecting rod; 22. Adjusting blade; 221. Guide rod; 222. Insertion hole; 223. Clearance groove; 23. Drive motor; 24. Flow channel; 25. Guide groove; 251. First limiting end; 252. Second limiting end; 30. Transmission assembly; 31. Gear ring; 311. First tooth structure; 312. Second tooth structure; 32. Drive gear; 33. Driven gear; 331. Drive rod; 40. Heating plate; 50. Target wafer. Detailed Implementation

[0044] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0045] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0046] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0047] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0048] Please refer to the following: Figures 1 to 7 The APF thin film deposition profile adjustment device and chemical vapor deposition equipment provided in the embodiments of this application will now be described.

[0049] To achieve the above objectives, a first aspect of this application is to provide an APF thin film deposition profile adjustment device for use in a chemical vapor deposition apparatus, comprising a fixed base 10 and an adjustment mechanism 20.

[0050] For details, please refer to Figures 1 to 4 The fixing seat 10 has an annular structure and a first through hole 11 is provided on the fixing seat 10. The first through hole 11 penetrates the fixing seat 10 along the axial direction of the fixing seat 10 and is used for the reaction gas to pass through so as to flow to the target wafer 50.

[0051] The adjustment mechanism 20 includes a connecting seat 21, an adjusting blade 22 and a drive motor 23. The connecting seat 21 is connected to the fixed seat 10 and has a flow channel 24. The position of the flow channel 24 corresponds to the position of the first through hole 11.

[0052] There are multiple adjusting blades 22, all of which are rotatably connected to the connecting seat 21. The inner walls of the multiple adjusting blades 22 are all curved. The multiple adjusting blades 22 are used to adjust the aperture of the flow channel 24.

[0053] The drive motor 23 is connected to the fixed base 10 and is connected to multiple adjusting blades 22 through the transmission assembly 30. The servo motor is either a servo motor or a stepper motor.

[0054] The target wafer 50 moves vertically along the heating plate 40 in the chemical vapor deposition equipment to bring the target wafer 50 closer to or away from the connector 21. When the target wafer 50 comes into contact with the side of the adjusting blade 22 facing the target wafer 50, the multiple adjusting blades 22 block the edge portion of the target wafer 50, and the reaction gas flows to the target wafer 50 through the flow channel 24.

[0055] The drive motor 23 is electrically connected to the control module in the chemical vapor deposition equipment. The control module applies different control signals to the drive motor 23 according to different deposition processes in the chemical vapor deposition equipment. The drive motor 23 adjusts the number of rotations and the direction of rotation according to the different control signals, so that multiple adjusting blades 22 rotate on the connecting seat 21. In turn, the multiple adjusting blades 22 adjust the aperture of the flow channel 24, thereby adjusting the width of the edge of the target wafer 50 blocked by the adjusting mechanism 20. Thus, the aperture of the flow channel 24 in the adjusting mechanism 20 can be adjusted as needed.

[0056] Compared with the prior art, the APF thin film deposition profile adjustment device provided in this application includes a fixed base 10 and an adjustment mechanism 20. The adjustment mechanism 20 includes a connecting base 21, adjusting blades 22 and a drive motor 23. The connecting base 21 is connected to the fixed base 10 and has a flow channel 24. The position of the flow channel 24 corresponds to the position of the first through hole 11. There are multiple adjusting blades 22, all of which are rotatably connected to the connecting base 21 for adjusting the aperture of the flow channel 24. The drive motor 23 is connected to the multiple adjusting blades 22 through a transmission assembly 30 and is electrically connected to the control module in the chemical vapor deposition equipment. The control module adjusts the aperture of the flow channel 24 according to different deposition processes in the chemical vapor deposition equipment. The APF thin film deposition profile adjustment device can be adapted to the aperture of the flow channel 24 required in different deposition processes without replacing the APF thin film deposition profile adjustment device.

[0057] In this application, the connecting seat 21 includes a first cover plate 211 and a second cover plate 212, and a plurality of adjusting blades 22 are rotatably connected between the first cover plate 211 and the second cover plate 212.

[0058] For details, please refer to Figure 3 and Figure 4 The first cover plate 211 has an annular structure and is connected to the side of the fixing base 10 facing the target wafer 50. The first cover plate 211 is provided with a second through hole 2111.

[0059] The second cover plate 212 is also an annular structure, and the second cover plate 212 is fixedly connected to the first cover plate 211 through the connecting rod 213. The second cover plate 212 and the first cover plate 211 are spaced apart. The second cover plate 212 is provided with a third through hole 2121.

[0060] The first through hole 11, the second through hole 2111 and the third through hole 2121 are coaxially arranged, and the flow channel 24 is formed by the second through hole 2111 and the third through hole 2121.

[0061] The first cover plate 211, the second cover plate 212, and the adjusting blade 22 are made of ceramic, nickel-chromium alloy, or tungsten carbide alloy. The diameters of the first through hole 11, the second through hole 2111, and the third through hole 2121 are equal and larger than the diameters of the target wafer 50 and the heating plate 40, so that when the heating plate 40 drives the target wafer 50 to move toward the fixed base 10, the target wafer 50 can enter the third through hole 2121 and abut against the side of the adjusting blade 22 facing the target wafer 50.

[0062] In this application, please refer to Figures 3 to 5Each adjusting blade 22 is provided with a guide rod 221, and the first cover plate 211 and / or the second cover plate 212 are provided with multiple guide grooves 25, each guide groove 25 corresponding to a guide rod 221. Each guide rod 221 is slidably connected to its corresponding guide groove 25. When the adjusting blade 22 rotates relative to the first cover plate 211 and the second cover plate 212, the guide rod 221 slides in the guide groove 25 to limit the rotation direction of the adjusting blade 22.

[0063] In one embodiment of this application, a guide groove 25 is disposed on a first cover plate 211 and extends through the first cover plate 211 along the axial direction of the first cover plate 211. A guide rod 221 is slidably connected within the guide groove 25.

[0064] In another embodiment of this application, a guide groove 25 is disposed on the second cover plate 212 and extends through the second cover plate 212 along the axial direction of the second cover plate 212, and a guide rod 221 is slidably connected in the guide groove 25.

[0065] In another embodiment of this application, guide grooves 25 are disposed on the first cover plate 211 and the second cover plate 212, and along the axial direction of the first cover plate 211 and the second cover plate 212, the guide groove 25 on the first cover plate 211 penetrates through the first cover plate 211, and the guide groove 25 on the second cover plate 212 penetrates through the second cover plate 212, and the position of the guide groove 25 on the first cover plate 211 corresponds to the position of the guide groove 25 on the second cover plate 212. A guide rod 221 penetrates the adjusting blade 22 and is partially slidably connected within the guide groove 25 on the first cover plate 211 and partially slidably connected within the guide groove 25 on the second cover plate 212.

[0066] In this application, the guide groove 25 extends in an arc shape.

[0067] For details, please refer to Figure 5 Along the extending direction of the guide groove 25, the guide groove 25 has a first limiting end 251 and a second limiting end 252. When the guide rod 221 on the plurality of adjusting blades 22 abuts against the first limiting end 251 on the corresponding guide groove 25, a first aperture is formed between the plurality of adjusting blades 22. When the guide rod 221 on the plurality of adjusting blades 22 abuts against the second limiting end 252 on the corresponding guide groove 25, a second aperture is formed between the plurality of adjusting blades 22. The first aperture is smaller than the second aperture. The drive motor 23 adjusts the aperture of the flow channel 24 between the first aperture and the second aperture through the transmission assembly 30.

[0068] In one embodiment of the application, the transmission assembly 30 includes a gear ring 31, a drive gear 32, and a driven gear 33.

[0069] For details, please refer to Figure 6 and Figure 7 The toothed ring 31 is located between the first cover plate 211 and the second cover plate 212, and rotates relative to the first cover plate 211 and the second cover plate 212. The inner and outer walls of the toothed ring 31 are respectively provided with multiple first tooth structures 311 and second tooth structures 312, wherein the extension length of the multiple first tooth structures is less than the circumference of the outer wall of the toothed ring 31, that is, multiple first tooth structures 311 are provided on a portion of the outer wall of the toothed ring 31.

[0070] The drive gear 32 is connected to the drive motor 23 and meshes with the first tooth structure 311 on the outer side of the gear ring 31.

[0071] There are multiple driven gears 33, and each driven gear 33 corresponds to a multiple adjusting blade 22. Each adjusting blade 22 is connected to a driven gear 33, and all driven gears 33 mesh with the second tooth structure 312.

[0072] When the drive motor 23 rotates, it drives the gear ring 31 to rotate through the drive gear 32. When the gear ring 31 rotates, it drives multiple driven gears 33 to rotate simultaneously. The multiple driven gears 33 drive multiple adjusting blades 22 to rotate simultaneously relative to the first cover plate 211 and the second cover plate 212, so as to adjust the aperture of the flow channel 24 and make the aperture of the flow channel 24 compatible with different deposition processes in the chemical vapor deposition equipment.

[0073] When the drive motor 23 rotates in the forward direction, the adjusting blade 22 moves from the position corresponding to the first aperture to the position corresponding to the second aperture, and when the drive motor 23 rotates in the reverse direction, the adjusting blade 22 moves from the position corresponding to the second aperture to the position corresponding to the first aperture.

[0074] In one embodiment of this application, among a plurality of driven gears 33, each driven gear 33 is rotatably connected to a corresponding adjusting blade 22. Each driven gear 33 is provided with a drive rod 331, and each adjusting blade 22 is provided with a insertion hole 222. The drive rod 331 of each driven gear 33 is inserted into the insertion hole 222 on the adjusting blade 22 corresponding to that driven gear 33. When each driven gear 33 rotates, it drives the corresponding adjusting blade 22 to rotate through the drive rod 331 provided thereon.

[0075] In one embodiment of this application, each driven gear 33 has two drive rods 331, and the two drive rods 331 are symmetrically arranged about the rotation axis of the driven gear 33.

[0076] For details, please refer to Figure 6 and Figure 7Each driven gear 33 is provided with two drive rods 331. On each driven gear 33, the two drive rods 331 are symmetrically arranged about the rotation axis of the driven gear 33. The number of insertion holes 222 in the adjusting blade 22 corresponding to the driven gear 33 is also two. The two insertion holes 222 correspond one-to-one with the two drive rods 331, and each drive rod 331 is inserted into the corresponding insertion hole 222.

[0077] In one embodiment of this application, please refer to Figure 6 and Figure 7 In the plurality of adjusting blades 22, each adjusting blade 22 has an avoidance groove 223 on its outer side wall. The avoidance groove 223 on each adjusting blade is used to avoid the driven gear 33 on the adjusting blade 22 adjacent to it.

[0078] In one embodiment of this application, please refer to Figure 7 The drive rod 331 and the guide rod 221 are integrally set, that is, the drive rod 331 extends into the guide groove 25 after passing through the insertion hole 222.

[0079] In one embodiment of this application, the outer sides of the first cover plate 211, the second cover plate 212, and the adjusting blade 22 are all provided with a protective layer.

[0080] Specifically, the protective layer is formed on the outer side of the first cover plate 211, the second cover plate 212, and the regulating blade 22 by hard anodizing (HA); or, the protective layer is formed on the outer side of the first cover plate 211, the second cover plate 212, and the regulating blade 22 by plasma electrolytic oxidation; or, the protective layer is formed on the outer side of the first cover plate 211, the second cover plate 212, and the regulating blade 22 by spraying to protect the first cover plate 211, the second cover plate 212, and the regulating blade 22.

[0081] Secondly, this application provides a chemical vapor deposition apparatus; please refer to [link to relevant documentation]. Figure 1 The device includes an APF thin film deposition profile adjustment device and a heating plate. The APF thin film deposition profile adjustment device is any one of the above-mentioned APF thin film deposition profile adjustment devices.

[0082] The heating plate 40 is used to fix the target wafer 50 and drive the target wafer 50 to move toward or away from the APF thin film deposition profile adjustment device, so that the target wafer 50 can be attached to or separated from the APF thin film deposition profile adjustment device.

[0083] Compared with the prior art, the chemical vapor deposition equipment provided in this application includes any of the above-mentioned APF thin film deposition profile adjustment devices. The APF thin film deposition profile adjustment device includes a fixed base 10 and an adjustment mechanism 20. The adjustment mechanism 20 includes a connecting base 21, adjustment blades 22 and a drive motor 23. The connecting base 21 is connected to the fixed base 10 and has a flow channel 24. The position of the flow channel 24 corresponds to the position of the first through hole 11. There are multiple adjustment blades 22, and all of them are rotatably connected to the connecting base 21 for adjusting the aperture of the flow channel 24. The drive motor 23 is connected to the multiple adjustment blades 22 through a transmission assembly 30 and is electrically connected to the control module in the chemical vapor deposition equipment. The control module adjusts the aperture of the flow channel 24 according to different deposition processes in the chemical vapor deposition equipment. The APF thin film deposition profile adjustment device can be adapted to the aperture of the flow channel 24 required in different deposition processes without replacing the APF thin film deposition profile adjustment device.

[0084] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A thin film deposition profile adjustment device, used in a chemical vapor deposition apparatus, characterized in that, include: The mounting base is provided with a first through hole; The adjustment mechanism includes a connecting seat, an adjusting blade, and a drive motor. The connecting seat is connected to the fixed seat, and the connecting seat is provided with a flow channel. The position of the flow channel corresponds to the position of the first through hole. The number of adjusting blades is multiple, and all of the multiple adjusting blades are rotatably connected to the connecting seat for adjusting the orifice diameter of the flow channel; The drive motor is connected to the fixed base and is driven by multiple adjusting blades through a transmission assembly. The drive motor is also electrically connected to the control module in the chemical vapor deposition equipment. The control module adjusts the aperture of the flow channel according to different deposition processes in the chemical vapor deposition equipment.

2. The thin film deposition profile adjustment device as described in claim 1, characterized in that, The connector includes: The first cover plate is connected to the fixed base and has a second through hole; The second cover plate is spaced apart from the first cover plate and has a third through hole, and the third through hole is coaxial with the second through hole. The flow channel is formed by the second through hole and the third through hole. The plurality of adjusting blades are rotatably connected between the first cover plate and the second cover plate.

3. The thin film deposition profile adjustment device as described in claim 2, characterized in that, The adjusting blade is provided with a guide rod, and the first cover plate and / or the second cover plate are provided with a guide groove, and the guide rod is slidably connected in the guide groove.

4. The thin film deposition profile adjustment device as described in claim 3, characterized in that, The guide groove extends in an arc shape.

5. The thin film deposition profile adjustment device as described in claim 4, characterized in that, Along the extending direction of the guide groove, the guide groove has a first limiting end and a second limiting end opposite to each other; When the guide rod on the plurality of adjusting blades abuts against the first limiting end on the corresponding guide groove, a first aperture is formed between the plurality of adjusting blades; When the guide rod on the plurality of adjusting blades abuts against the second limiting end on the corresponding guide groove, a second aperture is formed between the plurality of adjusting blades; The first aperture is smaller than the second aperture.

6. The thin film deposition profile adjustment device as described in claim 5, characterized in that, The transmission assembly includes: A toothed ring is located between the first cover plate and the second cover plate and rotates relative to the first cover plate and the second cover plate. The inner wall and the outer wall of the toothed ring are respectively provided with a plurality of first tooth structures and second tooth structures. A drive gear is connected to the drive motor and meshes with the first tooth structure on the outer side of the gear ring; There are multiple driven gears, each of which corresponds to a single adjusting blade. Each adjusting blade is connected to one of the driven gears, and all of the driven gears mesh with the second tooth structure.

7. The thin film deposition profile adjustment apparatus as described in claim 6, characterized in that, In the plurality of driven gears, each driven gear is rotatably connected to the corresponding adjusting blade; Each driven gear is provided with a drive rod, and each adjusting blade is provided with a insertion hole. The drive rod on each driven gear is inserted into the insertion hole on the adjusting blade corresponding to the driven gear.

8. The thin film deposition profile adjustment apparatus as described in claim 7, characterized in that, In each driven gear, there are two drive rods, and the two drive rods are symmetrically arranged about the rotation axis of the driven gear.

9. The thin film deposition profile adjustment device as described in claim 2, characterized in that, The outer sides of the first cover plate, the second cover plate, and the adjusting blade are all provided with a protective layer.

10. A chemical vapor deposition apparatus, characterized in that, include: A thin film deposition profile adjustment device, wherein the thin film deposition profile adjustment device is the thin film deposition profile adjustment device according to any one of claims 1-9; A heating plate is used to fix the target wafer and drive the target wafer toward or away from the thin film deposition profile adjustment device.

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