An annealing apparatus

Abstract

This application relates to an annealing apparatus. The annealing apparatus includes a housing, a support stage, a temperature detection device, and a heating control device. The housing contains a reaction chamber and includes a top wall at the top of the reaction chamber. The top wall has multiple openable and closable air inlets, each of which communicates with the reaction chamber when open. The support stage is disposed within the reaction chamber and has a bearing surface facing the top wall for supporting a wafer. The support stage includes a central heating zone located in a central area, and a ring-shaped heating zone surrounding the central heating zone, or multiple ring-shaped heating zones arranged outwards from the central heating zone. Each heating zone is equipped with a corresponding heating device. The temperature detection device is used to detect the wafer temperature in each heating zone. The heating control device is electrically connected to the temperature detection device and is used to separately control the heating devices in each heating zone according to the wafer temperature detected by each temperature detection device. The above-described annealing apparatus is beneficial for improving the wafer annealing effect.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and more particularly to an annealing apparatus. Background Technology

[0002] Annealing is a common process in wafer fabrication to eliminate crystal defects and reduce stress, thereby improving the electrical and optical properties of the corresponding film layers. For example, in the fabrication of gallium nitride (GaN) light-emitting diodes, indium tin oxide (ITO) is often used as the current spreading layer. Experiments have shown that annealing the ITO layer can improve its conductivity and light transmittance. The temperature, gas source, and other conditions used in the annealing process directly affect the annealing effect. Summary of the Invention

[0003] To address the aforementioned technical problems, this application provides an annealing apparatus, the annealing apparatus comprising:

[0004] A housing having a reaction chamber inside, the housing including a top wall located at the top of the reaction chamber, the top wall having a plurality of openable and closable air inlets, each of the air inlets being able to communicate with the reaction chamber when opened;

[0005] A support stage is disposed within the reaction chamber. The support stage has a bearing surface facing the top wall for supporting the wafer. The support stage includes a central heating zone located in the central region, and an annular heating zone surrounding the central heating zone or multiple annular heating zones arranged outward from the central heating zone. Each heating zone is provided with a corresponding heating device.

[0006] Temperature detection device, used to detect the wafer temperature in each heating zone;

[0007] A heating control device is electrically connected to the temperature detection device, and is used to control the heating devices set in each heating zone according to the wafer temperature detected by each temperature detection device.

[0008] In some embodiments, the top wall is provided with a plurality of transparent detection windows corresponding to each heating zone. The temperature detection device is located outside the reaction chamber and includes a plurality of infrared temperature detectors corresponding to each heating zone. Each infrared temperature detector detects the surface temperature of the wafer located in the corresponding heating zone through a corresponding transparent detection window. The transparent detection window is staggered from the air inlet.

[0009] In some embodiments, the transparent detection window is a quartz glass detection window.

[0010] In some embodiments, the heating control device includes a temperature controller and a heating controller that are electrically connected;

[0011] The temperature controller is electrically connected to each temperature detection device to obtain the wafer temperature detected by each temperature detection device, and to determine the target heating power of the heating device in each heating zone based on the wafer temperature detected by each temperature detection device.

[0012] The heating controller can control the heating devices in each heating zone to perform heating operations according to the target heating power of each heating zone.

[0013] In some embodiments, the heating device is a heating resistance wire.

[0014] In some embodiments, the support platform is rotatably configured.

[0015] In some embodiments, the annealing apparatus includes a base disposed in the reaction chamber, and the support platform is disposed on top of the base;

[0016] The base is a magnetohydrodynamic rotating base, which includes a magnetohydrodynamic driving part and a rotating shaft partially located within the magnetohydrodynamic driving part. The top of the rotating shaft extends out of the magnetohydrodynamic driving part, and the support platform is located on the top of the rotating shaft.

[0017] In some embodiments, the support platform includes two annular heating zones; the central heating zone is a circular region, and the annular heating zones are circular ring-shaped regions; wherein the width of the annular heating zone closer to the central heating zone is greater than the radius of the central heating zone; and the width of the annular heating zone closer to the central heating zone is greater than the width of the other annular heating zone.

[0018] In some embodiments, the heating control device is configured to perform heating compensation control on the heating device located in the central heating zone and the heating device located in the annular heating zone away from the central heating zone, based on the wafer surface temperature of the annular heating zone located near the central heating zone detected by the temperature detection device.

[0019] In some embodiments, the ratio between the radius of the central heating zone, the width of the annular heating zone near the central heating zone, and the width of the annular heating zone away from the central heating zone is 1:2:1.

[0020] In some embodiments, the bearing surface is configured to simultaneously support multiple wafers.

[0021] The technical solutions provided by the embodiments of this application may include the following beneficial effects:

[0022] As can be seen from the above embodiments, the annealing equipment in this application, by setting air inlets on the top wall, setting heating devices in different areas on the support stage, and adjusting the heating devices in each area according to the temperature of the wafer in each area, not only achieves uniform airflow, but also improves the uniformity of wafer heating, which is beneficial to improving the wafer annealing effect.

[0023] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this application. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a partial structural cross-sectional view of an annealing apparatus provided in one embodiment of this application;

[0026] Figure 2 This is a top view of a support platform provided in one embodiment of this application;

[0027] Figure 3 This is a cross-sectional schematic diagram of gas being introduced into the reaction chamber before the wafer is moved into the reaction chamber during annealing using an annealing equipment, according to one embodiment of this application.

[0028] Figure 4 This is a cross-sectional schematic diagram of annealing using an annealing device and the extraction of air from the reaction chamber after the wafer is moved into the reaction chamber, according to one embodiment of this application.

[0029] Figure 5 This is a top view schematic diagram of the wafer carrier rotating during annealing using an annealing device, provided in one embodiment of this application.

[0030] Figure 6 This is a cross-sectional schematic diagram of the gas being introduced into the reaction chamber after the wafer is moved into the reaction chamber during annealing using an annealing device, as provided in one embodiment of this application. Detailed Implementation

[0031] The technical solutions in the embodiments (or "implementations") of this application will be clearly and completely described herein with reference to the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0032] If the embodiments of this application contain terms relating to directional indications or positional relationships (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationships and movement of the components in a specific posture; if the specific posture changes, the directional indications or positional relationships will also change accordingly. Furthermore, the terms "first" and "second" used in the embodiments of this application are only for descriptive convenience and should not be construed as indicating or implying relative importance.

[0033] The following is in conjunction with the appendix Figures 1 to 6 The following describes some embodiments of this application in detail. Unless otherwise specified, the embodiments and features described below can be combined with each other.

[0034] Please refer to Figure 1 and combine when necessary Figures 2 to 6 As shown, this application provides an annealing apparatus 100. This annealing apparatus 100 can be used in the annealing process during wafer fabrication, for example, to anneal the indium tin oxide (ITO) layer, which serves as a current spreading layer, during the fabrication of gallium nitride (GaN) light-emitting diodes.

[0035] The annealing equipment 100 includes a housing 10, a support platform 20, a temperature detection device 30, and a heating control device (not shown).

[0036] The housing 10 has a reaction chamber 101. The housing 10 includes a top wall 11 located at the top of the reaction chamber 101. The top wall 11 is provided with a plurality of openable and closable air inlets 103. When each air inlet 103 is open, it can communicate with the reaction chamber 101 to introduce the required gas into the reaction chamber 101. When each air inlet 103 is closed, it can isolate the reaction chamber 101 from the outside at the corresponding air inlet 103.

[0037] Each air inlet 103 can be equipped with a corresponding opening and closing device, such as a valve or an openable and closable sealing baffle, to realize the opening and closing of the air inlet 103.

[0038] In some embodiments, the housing 10 further includes a side wall 12 and a bottom wall 13. The top wall 11, side wall 12, and bottom wall 13 enclose a reaction chamber 101. A wafer inlet / outlet 102 is provided on the side wall 12 to allow the wafer to be annealed to enter the reaction chamber 101 and the annealed wafer to be removed from the reaction chamber 101. A sealing baffle 50 is provided at the wafer inlet / outlet 102 to control the opening and closing of the wafer inlet / outlet 102.

[0039] A support stage 20 is disposed within the reaction chamber 101. The support stage 20 has a bearing surface S1 facing the top wall 11 for supporting the wafer 300. The support stage 20 includes a central heating zone 21 located in the central region, and an annular heating zone surrounding the central heating zone 21. Each heating zone is provided with a corresponding heating device. Each heating zone includes a central heating zone and an annular heating zone.

[0040] like Figure 1 and Figure 2 As shown, in some embodiments, the support platform 20 includes a central heating zone 21 located in the central region and two annular heating zones 22 and 23 surrounding the central region. The annular heating zone 22 is closer to the central heating zone 21, while the annular heating zone 23 is away from the central heating zone 21. The central heating zone 21 and the two annular heating zones 22 and 23 are respectively equipped with corresponding heating devices 201, 202, and 203.

[0041] Combination Figure 6 As shown, in some embodiments, the bearing surface S1 is configured to simultaneously bear multiple wafers 300, so that multiple wafers can be annealed at the same time, thereby improving the wafer annealing efficiency.

[0042] In some embodiments, the wafer 300 can be disposed on the bearing surface S1 via the wafer carrier 200. When multiple wafers 300 are simultaneously supported, the multiple wafers 300 can be laid flat on the wafer carrier 200.

[0043] In some embodiments, the bearing surface S1 of the support platform 20 may be circular. Of course, the support platform 20 may also be a region of other shapes.

[0044] Through research, the inventors discovered that, in the direction from the center of the self-supporting stage 20 towards the periphery, a relatively large annular region located in the middle of the self-supporting stage 20 experiences a higher temperature during heating, while the inner and outer regions of this annular region have relatively lower temperatures. In other words, the wafer surface temperature in the larger central annular region is higher, while the wafer surface temperature in the inner and outer regions of this annular region is relatively lower. This annular region corresponds to the annular heating region 22. The inner region of this annular region corresponds to the central heating region 21, and the outer region of the annular heating region 22 corresponds to the annular heating region 23.

[0045] Combination Figure 2As shown, in some embodiments, the central heating area 21 is a circular region, and the annular heating areas 22 and 23 are annular regions. Specifically, the width W2 of the annular heating area 22 closest to the central heating area 21 is greater than the radius W1 of the central heating area 21. The width W2 of the annular heating area 22 closest to the central heating area 21 is greater than the width W3 of the other annular heating area 23.

[0046] Accordingly, the radius W1 of the central heating region 21 is less than or equal to one-third of the radius W of the bearing surface S1. For example, the radius W1 of the central heating region 21 can be one-quarter of the radius W of the bearing surface S1.

[0047] In some embodiments, the width W3 of the annular heating zone 23 is equivalent to the radius W1 of the central heating zone 21.

[0048] In some embodiments, the ratio of the radius W1 of the central heating zone 21, the width W2 of the annular heating zone near the central heating zone 21, and the width W3 of the annular heating zone away from the central heating zone 21 is 1:2:1.

[0049] It should be noted that the size and shape of the central region can be set according to specific circumstances.

[0050] It should also be noted that in some other embodiments, an annular heating zone may be provided around the central heating zone, or multiple other annular heating zones arranged outward from the central heating zone, such as three annular heating zones, four annular heating zones, etc. Accordingly, each heating zone is provided with a corresponding heating device.

[0051] In some embodiments, the heating devices 201, 202, and 203 are heating resistance wires.

[0052] Heating resistance wire has better heating uniformity, which is generally within ±1℃. Compared with other heating methods such as halogen lamps, it is beneficial to improve the heating uniformity.

[0053] The heating device for each heating zone may include one heating resistance wire or multiple heating resistance wires.

[0054] Temperature detection device 30 is used to detect the temperature of wafer 300 located in each heating zone (including the central heating zone and each annular heating zone).

[0055] In some embodiments, the top wall 11 is provided with a plurality of transparent detection windows 80 corresponding to each heating zone. The temperature detection device 30 is located outside the reaction chamber 101 and includes a plurality of infrared temperature detectors 31, 32, and 33 corresponding to each heating zone. Each infrared temperature detector 31, 32, and 33 detects the surface temperature of the wafer 300 located in the corresponding heating zone through a corresponding transparent detection window 80; wherein the transparent detection window 80 is staggered from the air inlet 103.

[0056] like Figure 1 As shown, the central heating zone 21 and the two annular heating zones 22 and 23 each correspond to a transparent detection window 80. The temperature detection device 30 is located on the side of the top wall 11 facing away from the reaction chamber 101. The temperature detection device 30 includes infrared temperature detectors 31, 32, and 33 corresponding to the central heating zone 21 and the two annular heating zones 22 and 23, respectively. Infrared temperature detector 31 detects the surface temperature of the wafer 300 located in the central heating zone 21 through a corresponding transparent detection window 80. Infrared temperature detector 32 detects the surface temperature of the wafer 300 located in the annular heating zone 22 through a corresponding transparent detection window 80. Infrared temperature detector 33 detects the surface temperature of the wafer 300 located in the annular heating zone 23 through a corresponding transparent detection window 80.

[0057] The infrared temperature detectors 31, 32, and 33 can be mounted on the top wall 11 using mounting brackets, facing their respective transparent detection windows 80, or they can be directly affixed to their respective transparent detection windows 80.

[0058] It is understandable that each heating zone can be temperature-detected by setting up a corresponding temperature detection device, or by setting up multiple corresponding temperature detection devices.

[0059] In other embodiments, the temperature detection device 30 may also employ other temperature detectors or sensors, such as thermistor temperature sensors, semiconductor temperature sensors, etc., and the temperature detection device may be positioned at other locations within the support stage or reaction chamber. Compared to other types of temperature detection devices, the infrared temperature detector, a non-contact detection device, can accurately detect the temperature of the wafer 300 surface and is unaffected by the high temperature within the reaction chamber, thus better ensuring the service life of the temperature detection device.

[0060] In some embodiments, the transparent detection window 80 is a quartz glass detection window. Quartz glass is heat-resistant and has high transmittance. For the temperature detection device 30, including an infrared temperature detector, it can ensure the service life of the device while simultaneously detecting the surface temperature of the wafer 300.

[0061] In some embodiments, the transparent detection window 80 corresponding to the central heating zone 21 may be located directly above the center of the central heating zone 21, so that the temperature detection device can detect the surface temperature of the wafer 300 at the center.

[0062] It is understood that, in some embodiments, the temperature detection device corresponding to the annular heating area may be located directly above the center of the width of the annular heating area. This width can be understood as the dimension of the annular heating area in the direction from the central heating area 21 toward the periphery.

[0063] It should be noted that the "up" mentioned in this application can refer to the direction indicated by the double-headed arrow in the figure.

[0064] In some embodiments, the heating control device is electrically connected to the temperature detection device 30 to control the heating devices in each heating zone according to the wafer 300 temperature detected by each temperature detection device 30.

[0065] In some embodiments, the heating control device includes a temperature controller and a heating controller that are electrically connected.

[0066] The temperature controller is electrically connected to each temperature detection device 30 to obtain the wafer 300 temperature detected by each temperature detection device 30, and to determine the target heating power of the heating device in each heating zone based on the wafer 300 temperature detected by each temperature detection device 30.

[0067] The heating controller can control the heating devices in each heating zone to perform heating operations according to the target heating power of each heating zone.

[0068] Each heating zone can have a different heating power setting. The target heating power of each heating device can be the heating power corresponding to one of the multiple heating power settings available on the device.

[0069] Taking a support stage including a central heating area 21, an annular heating area 22, and an annular heating area 23 as an example, in some embodiments, the heating control device can be configured to perform heating compensation control on the heating device located in the central heating area 21 and the heating device located in the annular heating area 23 away from the central heating area 21, based on the wafer surface temperature detected by the temperature detection device located near the central heating area 21.

[0070] Based on the fact that the temperature of the annular heating zone 22 is relatively high during the heating process, and the annular heating zone 22 accounts for a large proportion, and the area of ​​the wafer 300 located in the annular heating zone 22 is also large, using the annular heating zone 22 as a reference can reduce the heating compensation control range and make it easier to control the surface temperature of the wafer 300 in each heating zone 21, 22 and 23 to be more even.

[0071] Accordingly, the target heating power of each heating zone can be determined based on the detected wafer surface temperatures in the annular heating zone 22, the annular heating zone 23, and the central heating zone 21. This determination is made by considering the temperature difference between the wafer surface temperatures in the annular heating zone 22 and the annular heating zone 23, the temperature difference between the wafer surface temperatures in the annular heating zone 22 and the central heating zone 21, and the heating devices installed in each heating zone. Specifically, the greater the temperature difference between the wafer surface temperatures in the annular heating zone 23 and the central heating zone 21 and the wafer surface temperature in the annular heating zone 22, the greater the target heating power, and the corresponding heating power is also relatively greater.

[0072] For example, at a certain time period or moment, the temperature detected by the temperature detection device 30 is 470°C for the central heating zone 21, 500°C for the annular heating zone 22, and 450°C for the annular heating zone 23. Thus, based on the detected temperatures of 470°C, 500°C, and 450°C for each heating zone, and the heating devices in each zone, the target heating power required for each heating zone can be determined. This allows the heating controller to adjust the heating power level by increasing, decreasing, or maintaining the corresponding heating power level. In this embodiment, the target heating power for the annular heating zone 22 is the lowest, the target heating power for the annular heating zone 23 is the highest, and the target heating power for the central heating zone 21 is between the target heating power of the annular heating zone 22 and the target heating power of the annular heating zone 23.

[0073] It should be noted that, in some other embodiments, the target heating power of each heating zone can also be determined based on the target temperature that the wafer surface located in the corresponding heating zone needs to be heated to and the temperature detected by the temperature detection device. Generally, the target temperature that the wafer 300 surface needs to be heated to is the same in each heating zone.

[0074] It should be noted that the temperature detection device 30 can be set to detect the temperature in real time or at certain intervals.

[0075] In some embodiments, the support platform 20 is rotatably configured.

[0076] In some embodiments, the annealing apparatus 100 includes a base 40 disposed in the reaction chamber 101, and a support platform 20 disposed on top of the base 40. The top of the base 40 is... Figure 1 The upper end of the base 40 shown.

[0077] In some embodiments, the base 40 is a magnetohydrodynamic (MHD) rotating base, comprising a MHD driving section 41 and a rotating shaft 42 partially located within the MHD driving section 41, with the top of the rotating shaft 42 extending out of the MHD driving section 41. The support platform 20 is disposed on the top of the rotating shaft 42. The top of the rotating shaft 42 is... Figure 1 The upper end of the rotating shaft 42 is shown. The magnetohydrodynamic drive unit 41 has a magnetohydrodynamic sealing cavity 401, which contains magnetohydrodynamic fluid for controlling the rotation of the rotating shaft 42 by controlling the flow direction of the magnetohydrodynamic fluid.

[0078] The magnetic fluid rotating base 40 has excellent sealing performance, which helps to improve the sealing performance of the reaction chamber 101 while enabling the support platform 20 to rotate, thereby improving the annealing effect.

[0079] It should be noted that the support platform can also be supported by other rotating bases 40.

[0080] In some embodiments, the sidewall 12 may be shaped as follows: Figure 1 The stepped sidewall 12 shown may include a first sidewall portion 121 and a second sidewall portion 122. The first sidewall portion 121 is disposed around the outer side of the second sidewall portion 122. A first receiving space for accommodating a support platform is formed on the inner side of the first sidewall portion 121, and a second receiving space for accommodating a base 40 is formed on the inner side of the second sidewall portion 122. The first receiving space and the second receiving space are connected.

[0081] In some embodiments, the annealing apparatus 100 may further include a vacuum device 60, such as a vacuum pump. The vacuum device 60 may be connected to the reaction chamber 101 via a shut-off valve 70 and may be used to extract gas from the reaction chamber 101 to reduce the pressure in the reaction chamber 101.

[0082] An air extraction hole 104 may be provided on the bottom wall 13, through which the air extraction device 60 can extract air outward.

[0083] Based on the above description, and in combination Figures 2 to 6 The wafer 300 was annealed using annealing equipment 100. For example... Figure 3As shown, nitrogen (N2) can first be introduced into the reaction chamber 101 through the air inlet 103 on the top wall to make the pressure inside the reaction chamber 101 the same as the pressure in the wafer transfer chamber outside the reaction chamber. Next, the sealing baffle 50 is opened, and a wafer carrier 200 carrying multiple wafers 300 is moved into the reaction chamber 101. The wafer carrier 200 is then fixed to the bearing surface S1 of the support stage 20, so that the surface of the wafer 300 facing away from the wafer carrier 200 faces the top wall 11, and the sealing baffle 50 is closed. Figure 4 As shown, the isolation valve 70 is then opened, and the evacuation device 60 rapidly evacuates the air to lower the pressure in the reaction chamber 101, before closing the isolation valve 70. Continuing, the base 40 can be controlled to rotate, causing the support stage 20 and wafer carrier 200 to rotate, and the temperature detection device 30 is activated. (As shown...) Figure 5 As shown, the rotation shaft 42 of the base 40 can drive the wafer carrier 200 to rotate along the direction indicated by the directed line segment 1001. Taking the temperature detection device 30, which includes infrared temperature detectors 31, 32, and 33, as an example, the infrared temperature detectors 32 and 33 can respectively detect the surface temperature of the wafer 300 located at the rotational dotted lines 1002 and 1003. The infrared temperature detector 31 can detect the temperature at the center 1004 of the wafer 300 surface in the central heating zone 21. Subsequently, the temperature detection device 30 can send the detected temperature to the temperature controller of the heating control device. The temperature controller can determine the target heating power for each heating zone based on calculations. Furthermore, the heating controller can control the heating devices 201, 202, and 203 of each zone according to the target heating power, so that the surface temperature of the wafer 300 located in each heating zone rises uniformly and stably. After the temperature reaches the preset target temperature and stabilizes at the target temperature, as... Figure 6 As shown, nitrogen, argon, or oxygen can be introduced into the reaction chamber 101 through the vent 103. The introduced nitrogen, argon, or oxygen can be uniformly distributed on the wafer surface. Subsequently, after the annealed film layer on the wafer surface has grown, helium or other cooling inert gases can be introduced into the reaction chamber 101 through the vent 103 to cool the wafer 300. When the temperature reaches the required temperature, such as 200 degrees Celsius, nitrogen (N2) can be introduced into the reaction chamber 101 through the vent 103 to make the pressure inside the reaction chamber 101 consistent with the pressure in the transfer chamber. Finally, the sealing baffle 50 is opened, and the wafer carrier 200, along with the annealed wafer 300, is removed from the reaction chamber 101.

[0084] The annealing equipment 100 described above, by setting air inlets 103 on the top wall 11, sets heating devices in the support platform 20 according to the area, and adjusts the heating devices in each area according to the temperature of the wafer in each area, can achieve uniform airflow and improve the uniformity of wafer heating, thus improving the wafer annealing effect.

[0085] It should be noted that the technical solutions or features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings; all modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. An annealing apparatus, characterized in that, The annealing equipment includes: A housing having a reaction chamber inside, the housing including a top wall located at the top of the reaction chamber, the top wall having a plurality of openable and closable air inlets, each of the air inlets being able to communicate with the reaction chamber when opened; A support stage is disposed within the reaction chamber. The support stage has a bearing surface facing the top wall for supporting the wafer. The support stage includes a central heating zone located in the central region, and an annular heating zone surrounding the central heating zone or multiple annular heating zones arranged outward from the central heating zone. Each heating zone is provided with a corresponding heating device. Temperature detection device, used to detect the wafer temperature in each heating zone; A heating control device is electrically connected to the temperature detection device, and is used to control the heating devices set in each heating zone according to the wafer temperature detected by each temperature detection device.

2. The annealing equipment as described in claim 1, characterized in that, The top wall is provided with a plurality of transparent detection windows corresponding to each heating zone. The temperature detection device is located outside the reaction chamber and includes a plurality of infrared temperature detectors corresponding to each heating zone. Each infrared temperature detector detects the surface temperature of the wafer located in the corresponding heating zone through a corresponding transparent detection window. The transparent detection window is staggered from the air inlet.

3. The annealing equipment as described in claim 2, characterized in that, The transparent detection window is a quartz glass detection window.

4. The annealing equipment as described in claim 1, characterized in that, The heating control device includes a temperature controller and a heating controller that are electrically connected. The temperature controller is electrically connected to each temperature detection device to obtain the wafer temperature detected by each temperature detection device, and to determine the target heating power of the heating device in each heating zone based on the wafer temperature detected by each temperature detection device. The heating controller can control the heating devices in each heating zone to perform heating operations according to the target heating power of each heating zone.

5. The annealing equipment as described in claim 1, characterized in that, The heating device is a heating resistance wire.

6. The annealing equipment as described in claim 1, characterized in that, The support platform is rotatable.

7. The annealing equipment as described in claim 6, characterized in that, The annealing equipment includes a base disposed in the reaction chamber, and a support platform disposed on top of the base; The base is a magnetohydrodynamic rotating base, which includes a magnetohydrodynamic driving part and a rotating shaft partially located within the magnetohydrodynamic driving part. The top of the rotating shaft extends out of the magnetohydrodynamic driving part, and the support platform is located on the top of the rotating shaft.

8. The annealing equipment as described in claim 1, characterized in that, The support platform includes two annular heating zones; the central heating zone is a circular area, and the annular heating zones are circular ring-shaped areas; wherein, the width of the annular heating zone closer to the central heating zone is greater than the radius of the central heating zone; and the width of the annular heating zone closer to the central heating zone is greater than the width of the other annular heating zone.

9. The annealing equipment as described in claim 8, characterized in that, The heating control device is configured to use the wafer surface temperature of the annular heating zone located near the central heating zone, detected by the temperature detection device, as a reference to perform heating compensation control on the heating device located in the central heating zone and the heating device located in the annular heating zone away from the central heating zone.

10. The annealing equipment as described in claim 8, characterized in that, The ratio between the radius of the central heating zone, the width of the annular heating zone near the central heating zone, and the width of the annular heating zone away from the central heating zone is 1:2:

1.

11. The annealing equipment as described in claim 1, characterized in that, The bearing surface is configured to support multiple wafers simultaneously.

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