A semiconductor cascade device
By setting up an oxygen-free chamber in the semiconductor cascade equipment, wafers can be transported directly in an oxygen-free environment, solving the problem of cobalt surface oxidation and improving the reaction quality and production efficiency of cobalt and silicon.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- RONGXIN SEMICONDUCTOR (NINGBO) CO LTD
- Filing Date
- 2025-08-15
- Publication Date
- 2026-06-30
AI Technical Summary
During cobalt surface deposition, oxidation within the waiting time range leads to the formation of cobalt oxide, affecting the reaction quality of cobalt with silicon and the stability of silicide. Existing technologies add a titanium nitride layer to isolate oxygen, but this increases the deposition reaction time and reduces work efficiency.
An oxygen-free chamber is set up between the physical co-deposition equipment and the rapid annealing equipment. The wafer is transported in an oxygen-free environment to avoid the formation of cobalt oxide and directly enter the rapid annealing equipment, reducing the number of steps and time.
It effectively avoids the formation of cobalt oxide, improves the reaction quality between cobalt and silicon, reduces deposition reaction time, and improves work efficiency.
Smart Images
Figure CN224430681U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of integrated circuit manufacturing equipment technology, specifically to a semiconductor cascade device. Background Technology
[0002] Cobalt, due to its low resistivity, high reliability, and room-temperature stability, is gradually replacing titanium as an interconnect metal material in the manufacture of integrated electronic devices. Currently, the commonly used method is to deposit cobalt (CO) using physical vapor deposition (PVD), followed by high-temperature formation of a self-aligned silicide. For example... Figure 1 As shown, there is a waiting time between PVD CO deposition and the subsequent rapid annealing (RTA) process. During this waiting time, the cobalt surface may oxidize, forming cobalt oxide. This oxidation severely affects the reaction quality of cobalt CO with silicon (Si) and the stability of the silicide. To address this issue, existing technologies typically deposit a layer of titanium nitride on the wafer surface after cobalt deposition to isolate oxygen. Finally, the wafer exits the deposition chamber and waits for a certain period before undergoing the first rapid annealing process to form Co₂Si, which in turn forms the silicide. This increases the deposition reaction time and reduces efficiency. Utility Model Content
[0003] To address the aforementioned technical problems, this technical solution provides a semiconductor cascade device that allows the wafer semiconductor to directly enter a rapid thermal annealing chamber through an oxygen-free chamber after completing the PVD cobalt deposition step. This oxygen-free environment effectively prevents the formation of cobalt oxide. Simultaneously, it reduces the number of steps, shortens the deposition reaction time, and increases work efficiency, effectively solving the aforementioned problems.
[0004] This utility model is achieved through the following technical solution:
[0005] A semiconductor cascade device includes a physical co-deposition device and a rapid thermal decompression device; an oxygen-free chamber is provided between the physical co-deposition device and the rapid thermal decompression device, and chamber valves are respectively provided at the connection points of the two ends of the oxygen-free chamber with the physical co-deposition device and the rapid thermal decompression device; a transfer structure for transferring wafers is provided at the bottom of the oxygen-free chamber, the transfer structure includes a slide rail, a vacuum chuck and a robotic arm provided on the slide rail, the robotic arm transfers the wafer from the physical co-deposition device to the vacuum chuck, or transfers the wafer from the vacuum chuck to the rapid thermal decompression device.
[0006] Furthermore, the oxygen-free chamber is equipped with an exhaust pipe, and the exhaust pipe is equipped with a one-way valve; this ensures that the exhaust pipe can only discharge the gas from the oxygen-free chamber, and that the gas cannot enter the oxygen-free chamber from the exhaust pipe.
[0007] Furthermore, after completing the operation of the deposition chamber, the chamber valve between the oxygen-free chamber and the physical co-deposition equipment is opened, and the wafer is transferred to the oxygen-free chamber using a robotic arm. The chamber valve of the oxygen-free chamber is then closed, and the one-way valve on the exhaust pipe is opened to discharge the gas that entered the deposition chamber. At the same time, the wafer is transferred to one end of the rapid annealing equipment via a conveying structure. Then, the chamber valve between the oxygen-free chamber and the rapid annealing equipment is opened again, and the wafer is transferred to the rapid annealing equipment using a robotic arm.
[0008] Furthermore, the oxygen-free chamber is provided with two independent oxygen-free chambers, and each of the two independent oxygen-free chambers is provided with a conveying structure.
[0009] Furthermore, the vacuum chuck is a symmetrical rotating chuck. When the robotic arm grasps the wafer, the symmetrical rotating chuck rotates to the optimal angle, making it easy for the robotic arm to directly grasp the wafer.
[0010] Furthermore, the robotic arm is a dual-arm design, capable of gripping two wafers at once.
[0011] Furthermore, the end of the robotic arm is equipped with a silicon wafer manipulator, which facilitates the gripping of wafers.
[0012] Furthermore, the slide rail is a circular or elliptical track, on which the vacuum suction cup and the robotic arm can circulate. Beneficial effects
[0013] The semiconductor cascade device proposed in this utility model has the following advantages compared with the prior art:
[0014] This technical solution connects the equipment for cobalt deposition and rapid cobalt annealing through an oxygen-free chamber, eliminating the need for a titanium nitride deposition chamber. After completing the PVD cobalt deposition step, the wafer semiconductor does not enter the titanium nitride chamber but directly enters the rapid thermal annealing chamber, ensuring transport through an oxygen-free environment. This effectively reduces the risk of cobalt being oxidized to cobalt oxide, improves the quality of self-aligned silicides, reduces the running time of titanium nitride deposition, reduces the interval between cobalt deposition and rapid annealing, and increases the operating efficiency of the production line. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the prior art in the background section.
[0016] Figure 2 This is a schematic diagram of the overall structure of this utility model.
[0017] Figure 3 This is a schematic diagram of the layout of the oxygen-free chamber in this utility model.
[0018] The labels in the attached diagram are: 1-physical co-deposition equipment, 2-rapid deheating equipment, 3-oxygen-free chamber, 31-chamber valve, 32-slide rail, 33-vacuum suction cup, 34-robotic arm, 35-exhaust pipe, 36-one-way valve. Detailed Implementation
[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. The described embodiments are only some embodiments of the present utility model, and not all embodiments. Various modifications and improvements to the technical solutions of the present utility model made by those skilled in the art without departing from the design concept of the present utility model should fall within the protection scope of the present utility model. Example 1
[0020] like Figure 2 As shown, a semiconductor cascade device includes a physical co-deposition device 1, an oxygen-free chamber 3, and a rapid deheating device 2 arranged sequentially.
[0021] like Figure 3 As shown, the oxygen-free chamber 3 is provided with two independent oxygen-free chambers. At the connection points between the two ends of the oxygen-free chamber 3 and the physical co-deposition device 1 and the rapid annealing device 2, chamber valves 31 are respectively provided; and each of the two independent oxygen-free chambers is provided with a conveying structure.
[0022] The conveying structure includes a slide rail 32, a vacuum chuck 33, and a robotic arm 34 mounted on the slide rail 32. The slide rail 32 is a circular or elliptical track, and the vacuum chuck 33 and robotic arm 34 can circulate on the track 32. In the attached diagram, the vacuum chuck 33 and robotic arm 34 are located at both ends, but in actual application, the robotic arm 34 is on one side of the vacuum chuck 33. The robotic arm 34 transfers wafers from the physical co-deposition equipment 1 to the vacuum chuck 33, or transfers wafers from the vacuum chuck 33 to the rapid cooling equipment 2. This facilitates the robotic arm 34 in gripping wafers into the vacuum chuck 33 or manipulating the wafers in the vacuum chuck 33.
[0023] The vacuum chuck 33 is a symmetrical rotating chuck. When the robotic arm 34 grasps the wafer, the symmetrical rotating chuck rotates to the optimal angle, making it easy for the robotic arm to directly grasp the wafer.
[0024] The robotic arm 34 is a dual-arm design, capable of gripping two wafers at once; the end of the robotic arm 34 is a silicon wafer manipulator, which facilitates wafer gripping.
[0025] The oxygen-free chamber 3 is provided with an exhaust pipe 35, and a one-way valve 36 is provided on the exhaust pipe 35; so that the exhaust pipe 35 can only discharge the gas in the oxygen-free chamber 3, and the gas cannot enter the oxygen-free chamber 3 from the exhaust pipe 35.
[0026] Workflow: After completing the operation of the deposition chamber, open the chamber valve 31 between the oxygen-free chamber 3 and the physical co-deposition equipment 1. Use the robotic arm 34 to transfer the wafer to the vacuum chuck 33 of the oxygen-free chamber 4. Close the valve 31 of the oxygen-free chamber and open the one-way valve 36 on the exhaust pipe 35 to expel the gas that entered the deposition chamber. At the same time, the wafer is transferred to one end of the rapid annealing equipment 2 through the conveying structure. Then open the valve 31 between the oxygen-free chamber 3 and the rapid annealing equipment 2 again and use the robotic arm 34 to transfer the wafer to the rapid annealing equipment. Open the one-way valve 36 on the exhaust pipe 35 again to expel the gas that entered the rapid annealing equipment. At the same time, the vacuum chuck 33 and the robotic arm 34 are transferred to one end of the physical co-deposition equipment 1 through the conveying structure. Repeat the cycle.
[0027] The main improvement of this embodiment is the inclusion of an oxygen-free chamber between the physical co-deposition device and the rapid cooling device, within which a circular track is arranged, along with symmetrical rotating suction cups and a robotic arm mounted on the track. The structures of the physical co-deposition device, the rapid cooling device, and the oxygen-free chamber, as well as the operation modes of the circular track, the symmetrical rotating suction cups, and the robotic arm, all adopt conventional structures and operating methods in the art; therefore, no further reiteration of mature prior art is required here.
Claims
1. A semiconductor cascade device, comprising a physical co-deposition device (1) and a rapid thermal annealing device (2); characterized in that: An oxygen-free chamber (3) is provided between the physical co-deposition equipment (1) and the rapid deheating equipment (2). At the connection points between the two ends of the oxygen-free chamber (3) and the physical co-deposition equipment (1) and the rapid deheating equipment (2), chamber valves (31) are respectively provided. At the bottom of the oxygen-free chamber (3), a transfer structure for transferring wafers is provided. The transfer structure includes a slide rail (32), a vacuum chuck (33) and a robotic arm (34) provided on the slide rail (32). The robotic arm (34) transfers the wafer from the physical co-deposition equipment (1) to the vacuum chuck (33), or transfers the wafer from the vacuum chuck (33) to the rapid deheating equipment (2).
2. The semiconductor cascade device according to claim 1, characterized in that: An exhaust pipe (35) is provided on the anaerobic chamber (3), and a one-way valve (36) is provided on the exhaust pipe (35); so that the exhaust pipe (35) can only discharge the gas in the anaerobic chamber (3), and the gas cannot enter the anaerobic chamber (3) from the exhaust pipe (35).
3. A semiconductor cascade device according to claim 2, characterized in that: After completing the operation of the deposition chamber, open the chamber valve (31) between the oxygen-free chamber (3) and the physical co-deposition equipment (1), use the robotic arm (34) to transfer the wafer into the oxygen-free chamber (3), close the valve (31) of the oxygen-free chamber, open the one-way valve (36) on the exhaust pipe (35) to discharge the gas that entered the deposition chamber, and at the same time transfer the wafer to one end of the rapid annealing equipment (2) through the transfer structure; then open the valve (31) between the oxygen-free chamber (3) and the rapid annealing equipment (2), and use the robotic arm (34) to transfer the wafer into the rapid annealing equipment (2).
4. A semiconductor cascade device according to claim 1, characterized in that: The oxygen-free chamber (3) is provided with two independent oxygen-free chambers, and each of the two independent oxygen-free chambers is provided with a conveying structure.
5. A semiconductor cascade device according to claim 1, characterized in that: The vacuum chuck (33) is a symmetrical rotating chuck. When the robotic arm (34) grabs the wafer, the symmetrical rotating chuck rotates to the optimal angle, which makes it easy for the robotic arm to directly grab the wafer.
6. A semiconductor cascade device according to claim 1, characterized in that: The robotic arm (34) is a dual-arm design, capable of gripping two wafers at once.
7. A semiconductor cascade device according to claim 1 or 6, characterized in that: The end of the robotic arm (34) is a silicon wafer manipulator, which is convenient for grasping wafers.
8. A semiconductor cascade device according to claim 1, characterized in that: The slide rail (32) is a circular or elliptical track, and the vacuum suction cup (33) and the robotic arm (34) can run in a cycle on the track.