Device for preparing high-purity metallization layers on the surface of deep-hole components

Abstract

This application discloses an apparatus for preparing a high-purity metallization layer on the surface of deep-aperture disk-type components, comprising: a vacuum chamber, a driving assembly, and an evaporation source. A sealed door is installed on the left side of the vacuum chamber via a hinge. A throttling valve is installed on the outer upper end of the vacuum chamber, and a molecular pump is installed on the outer upper end of the throttling valve. A molecular trap is installed on the top inner side of the vacuum chamber. The driving assembly is installed on the outer rear end of the vacuum chamber. This application belongs to the field of component processing technology. The purpose of this application is to solve the problem in the prior art that the combined motion of oscillation and continuous rotation cannot be achieved, resulting in a single incident angle of molecules in the metallization layer and insufficient uniformity of the high-purity metallization layer. The achieved technical effect is: it can achieve a combined motion of oscillation and continuous rotation, facilitating the optimization of the uniformity of the high-purity metallization layer through multi-angle incident motion, and avoiding the problem of uneven surface metallization layer caused by a single incident angle of molecules.

Description

Technical Field

[0001] This application relates to the field of parts processing technology, specifically to a device for preparing a high-purity metallization layer on the surface of deep-hole disc-type parts. Background Technology

[0002] Deep-hole disc-shaped components are a type of deep-hole structure with a high aspect ratio (≥10:1) in the mechanical manufacturing field. Their diameter is much larger than their thickness (e.g., flanges, bearing housings, circular end caps), and they are composed of coaxial or variable-diameter cylindrical surfaces. The surface features end faces, outer circles, inner holes, and threaded holes. These components require specialized surface preparation equipment to achieve uniform metallization deposition on the inner wall of the deep hole. This meets the requirements for wear resistance, corrosion resistance, and bonding strength in fields such as micro-molding, TGV / TSV advanced packaging, and aerospace precision parts, thereby extending service life and optimizing performance.

[0003] However, most current equipment for preparing high-purity metallization layers on the surface only supports sample rotation or fixed-angle oscillation during the preparation process, and cannot achieve a composite motion of oscillation and continuous rotation. This results in a single incident angle of metallization layer molecules and insufficient uniformity of the prepared high-purity metallization layer. In particular, thickness differences are prone to occur in the corners and edge areas of complex curved surfaces (such as gas distribution plates), making it difficult to meet the requirements for uniformity and adhesion of the metallization layer deposited in small deep holes. Utility Model Content

[0004] To address this issue, this application provides a device for preparing a high-purity metallization layer on the surface of deep-aperture disc-type components, thereby solving the problem that existing devices cannot achieve a combined motion of oscillation and continuous rotation, resulting in a single incident angle of metallization layer molecules and insufficient uniformity of the high-purity metallization layer prepared on the surface.

[0005] To achieve the above objectives, this application provides the following technical solution:

[0006] A device for preparing a high-purity metallization layer on the surface of a deep-aperture disk-type component includes a vacuum chamber, a drive assembly, and an evaporation source. A sealing door is installed on the left side of the vacuum chamber via a door hinge. A throttling valve is provided on the upper outer side of the vacuum chamber, and a molecular pump is installed on the upper outer side of the throttling valve. A molecular trap is provided on the top inner side of the vacuum chamber, and a heater is installed on the side of the molecular trap.

[0007] A drive assembly is provided on the outer rear end of the vacuum chamber. The output end of the drive assembly is connected to a sample holder located inside the vacuum chamber, and the sample body is placed inside the sample holder. This assembly is used to drive the double-sided switching of preparing a high-purity metallization layer on the surface of the sample body.

[0008] An evaporation source is provided at the bottom inner side of the vacuum chamber, and the evaporation source is located directly below the sample body. A baffle is rotatably provided on the outer side of the evaporation source.

[0009] Furthermore, a support cabinet is provided on the lower outer side of the vacuum chamber, and a power supply located outside the vacuum chamber is installed on the upper right side of the cabinet. A control device electrically connected to the power supply is installed on the front side of the cabinet, and a mechanical pump is provided on the rear side of the cabinet.

[0010] Furthermore, the inner walls of the vacuum chamber are all lined with plates.

[0011] Furthermore, the sidewall of the vacuum chamber is provided with an ion source and an electrode from top to bottom, and the electrode is electrically connected to the evaporation source and the power source, respectively.

[0012] Furthermore, the evaporation source includes an induction coil, a heat insulation layer, and a crucible. The induction coil is mounted on the inner bottom of the vacuum chamber via a base, and a heat insulation layer is provided inside the induction coil, with a crucible located inside the heat insulation layer.

[0013] Furthermore, a third rotating magnetic fluid is installed on the right side of the lower surface of the vacuum chamber, and a cylinder is provided on the outer side of the lower end of the third rotating magnetic fluid. The output end of the third rotating magnetic fluid is connected to a baffle to drive the baffle to rotate, and the rotation angle of the baffle is less than 180°.

[0014] Furthermore, the molecule trap, sample body, baffle, and evaporation source are arranged sequentially from top to bottom inside the vacuum chamber.

[0015] Compared with the prior art, this application has at least the following beneficial effects:

[0016] 1. A sample holder located within a vacuum chamber is connected to the output end of a drive assembly. The sample body is placed and fixed inside the sample holder. The oscillating reducer in the drive assembly drives the second rotating magnetic fluid to rotate and oscillate via a first gear set, achieving the switching between the preparation of a high-purity metallization layer on the A and B surfaces of the sample body. The oscillation of the sample body during the surface preparation of the high-purity metallization layer is also achieved through forward and reverse oscillation. Simultaneously, the reducer drives the internal toothed belt to rotate via the first rotating magnetic fluid, transmitting power to the second gear set and the gear ring within the sample holder, achieving the rotation of the gear ring. The sample body is mounted on the gear ring and mechanically locked to fix it within the gear ring, ensuring that the sample body does not shift during oscillation and rotation, thus achieving sample rotation during the coating process. This enables a composite motion of oscillation and continuous rotation, allowing for optimization of coating uniformity through multi-angle incident radiation. It effectively reduces thickness differences, especially in complex curved surfaces such as the corners and edges of gas distribution plates, avoiding uneven coating caused by a single molecular incident angle.

[0017] 2. The cylinder's oscillation, driven by a third rotating magnetic fluid, causes a baffle to oscillate. When the evaporation of the target material for preparing the high-purity metallization layer is unstable, the baffle can rotate to directly above the crucible, blocking the target material. After evaporation stabilizes, the cylinder and the third rotating magnetic fluid cause the baffle to rotate and oscillate to the side, allowing the evaporated molecules of the target material to deposit onto the sample body, improving the effectiveness of preparing the high-purity metallization layer on the sample body. Attached Figure Description

[0018] To more intuitively illustrate the prior art and this application, exemplary drawings are provided below. It should be understood that the specific shapes and structures shown in the drawings should not generally be regarded as limiting conditions for implementing this application; for example, based on the technical concept disclosed in this application and the exemplary drawings, those skilled in the art are capable of making conventional adjustments or further optimizations to the addition / reduction / classification of certain units, their specific shapes, positional relationships, connection methods, size ratios, etc.

[0019] Figure 1 A front cross-sectional view of an apparatus for preparing a high-purity metallization layer on the surface of a deep-hole-ratio disk-type component according to an embodiment of this application;

[0020] Figure 2 A side view of an apparatus for preparing a high-purity metallization layer on the surface of a deep-hole-ratio disk-type component according to an embodiment of this application;

[0021] Figure 3 A top cross-sectional view of an apparatus for preparing a high-purity metallization layer on the surface of a deep-hole-ratio disk-type component according to an embodiment of this application;

[0022] Figure 4 A side cross-sectional view of the connection between the second gear set and the sample holder in an apparatus for preparing a high-purity metallization layer on the surface of a deep-hole disc-type component according to an embodiment of this application;

[0023] Figure 5 An embodiment of this application provides an apparatus for preparing a high-purity metallization layer on the surface of a deep-aperture disc-type component. Figure 1 A schematic diagram of a partial frontal cross-sectional structure.

[0024] Explanation of reference numerals in the attached figures:

[0025] 1. Vacuum chamber; 2. Viewing window; 3. Partition; 4. Liner; 5. Molecular pump; 6. Throttling valve; 7. Molecular trap; 8. Heater; 9. Sample rack; 10. Sample body; 11. Power supply; 12. Ion source; 13. Induction coil; 14. Insulation layer; 15. Crucible; 16. Sealed door; 17. Door hinge; 18. Oscillating reducer; 19. External transmission cavity; 20. Control equipment; 21. Rotary reducer; 22. First rotating magnetohydrodynamic fluid; 23. Toothed belt; 24. First gear set; 25. Second rotating magnetohydrodynamic fluid; 26. Second gear set; 27. Cylinder; 28. Third rotating magnetohydrodynamic fluid; 29. ​​Baffle; 30. Inlet electrode; 31. Mechanical pump; 32. Cabinet. Detailed Implementation

[0026] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] like Figures 1 to 5 As shown, the apparatus for preparing a high-purity metallization layer on the surface of a deep-aperture disc-like component according to the first aspect of this application includes: a vacuum chamber 1, a drive assembly, and an evaporation source. A sealing door 16 is installed on the left side of the vacuum chamber 1 via a door hinge 17, and a viewing window 2 is provided through the middle of the sealing door 16. A partition 3 is also provided above the viewing window 2, penetrating inside the sealing door 16. Liners 4 are installed around the inner wall of the vacuum chamber 1 to facilitate observation of the high-purity metallization layer preparation status on the inner surface of the vacuum chamber 1 through the viewing window 2, enabling real-time monitoring. At the same time, the partition 3 can block the viewing window 2 to prevent light or impurities from affecting the high-purity metallization layer preparation process. Observation can be performed simply by rotating the partition 3. The liner 4 is used to protect the inner wall of the vacuum chamber 1, reducing the deposition or corrosion of the high-purity metallization layer material on the surface.

[0028] A throttle valve 6 is provided on the upper outer side of the vacuum chamber 1, and a molecular pump 5 is installed on the upper outer side of the throttle valve 6. A molecular trap 7 is provided on the top inner side of the vacuum chamber 1, and a heater 8 is installed on the right side of the molecular trap 7.

[0029] Among them, the molecular pump 5 and the throttle valve 6 can remove gas molecules in the vacuum chamber 1 and maintain the stability of the vacuum system, the molecular trap 7 is used to capture residual gas molecules to prevent contamination of the surface environment for preparing a high-purity metallization layer, and the heater 8 can heat the sample body 10 to promote film formation or improve film performance.

[0030] A drive assembly is provided on the outer rear end of the vacuum chamber 1. The output end of the drive assembly is connected to a sample holder 9 located inside the vacuum chamber 1. The sample holder 9 contains a sample body 10, which is used to drive the double-sided switching of preparing a high-purity metallization layer on the surface of the sample body 10.

[0031] The drive assembly includes a swing reducer 18, an outer transmission cavity 19, and a rotary reducer 21. A first gear set 24 is connected to the outer side of the swing reducer 18. A first rotating magnetic fluid 22 is connected to the upper end of the outer transmission cavity 19, and a rotary reducer 21 is provided on the outer side of the upper end of the first rotating magnetic fluid 22. A toothed belt 23 is provided inside the outer transmission cavity 19, and a second rotating magnetic fluid 25, also located in the outer transmission cavity 19, is connected to the outer side of the toothed belt 23. The first gear set 24 is connected to the second rotating magnetic fluid 25. A second gear set 26 is connected to the front end of the toothed belt 23, and the second gear set 26 is connected to a fixed gear ring provided inside the sample holder 9. At the same time, the fixed gear ring rotates inside the sample holder 9.

[0032] The oscillating reducer 18 drives the second rotating magnetic fluid 25 to rotate and oscillate via the first gear set 24, enabling the switching of the preparation of high-purity metallization layers on the A and B surfaces of the sample body 10. It also achieves the oscillation of the sample body 10 during the metallization process through forward and reverse oscillation. Simultaneously, the rotating reducer 21 drives the internal toothed belt 23 to rotate via the first rotating magnetic fluid 22, transmitting power to the second gear set 26 and the gear ring within the sample holder 9, thus achieving the rotation of the gear ring. The sample body 10 is mounted on the gear ring and mechanically locked to ensure its secure fixation during oscillation and rotation, enabling sample rotation. This allows for a combined oscillation and continuous rotation motion, facilitating optimization of the metallization layer uniformity through multi-angle incident radiation. This is particularly effective in reducing thickness differences on complex curved surfaces such as the corners and edges of gas distribution plates, avoiding uneven high-purity metallization layers caused by a single molecular incident angle.

[0033] The working principle of the drive assembly and the mechanical locking of the gear ring and sample body 10 is existing technology and will not be described in detail here.

[0034] An evaporation source is located at the bottom inner side of the vacuum chamber 1, directly below the sample body 10. The evaporation source includes an induction coil 13, a heat insulation layer 14, and a crucible 15. The induction coil 13 is mounted on the bottom inner side of the vacuum chamber 1 via a base, and the heat insulation layer 14 is located inside the induction coil 13. The crucible 15 is located inside the heat insulation layer 14. An ion source 12 and an input electrode 30 are arranged sequentially from top to bottom on the side wall of the vacuum chamber 1, and the input electrode 30 is electrically connected to the evaporation source and the power supply 11, respectively. The ion source 12 can generate an ion beam to clean the surface of the sample body 10 or to prepare a high-purity metallization layer deposition on an auxiliary surface.

[0035] The power supply 11 can apply an alternating magnetic field to the induction coil 13 through the input electrode 30. The alternating magnetic field generates an alternating current. The crucible 15 generates induced heat under the action of the alternating current, which is conducted to the high-purity metal target material inside the crucible 15, causing the target material to melt. Combined with vacuum and temperature, the high-purity metal prepared on the surface volatilizes, and the metal molecules fly onto the sample body 10. Upon cooling, they solidify onto the sample body 10, forming a film layer.

[0036] A baffle 29 is rotatably mounted on the outer side of the evaporation source. A third rotating magnetic fluid 28 is installed on the right side of the lower surface of the vacuum chamber 1, and a cylinder 27 is installed on the outer side of the lower end of the third rotating magnetic fluid 28. The output end of the third rotating magnetic fluid 28 is connected to the baffle 29 to drive the baffle 29 to rotate, and the rotation angle of the baffle 29 is less than 180°. The molecule trap 7, the sample body 10, the baffle 29, and the evaporation source are arranged sequentially from top to bottom inside the vacuum chamber 1 to ensure a high-purity metallization effect.

[0037] The cylinder 27 swings, which drives the baffle 29 to swing through the third rotating magnetic fluid 28. When the evaporation is unstable, the baffle 29 can rotate to the top of the crucible 15 to block the metal target. After the evaporation is stable, the cylinder 27 and the third rotating magnetic fluid 28 drive the baffle 29 to rotate and swing to the side, so that the molecules of the high-purity metal evaporated are deposited on the sample body 10, thereby improving the metallization effect on the sample body 10.

[0038] A cabinet 32 ​​for support is provided on the lower outer side of the vacuum chamber 1, and a power supply 11 located outside the vacuum chamber 1 is installed on the upper right side of the cabinet 32. A control device 20 electrically connected to the power supply 11 is installed on the front side of the cabinet 32, and a mechanical pump 31 is provided on the rear side of the cabinet 32.

[0039] The cabinet 32 ​​is used to support the whole, the control equipment 20 integrates parameter setting, motion control and process monitoring to realize the automated process of preparing high-purity metallization layer on the surface, and the mechanical pump 31 can roughly pump vacuum and quickly remove the atmosphere to provide a low vacuum environment for the molecular pump 5.

[0040] Working principle

[0041] First, place the cabinet 32 ​​in the designated position, fix the sample body 10 in the sample holder 9, place the high-purity metallized target in the crucible 15, close the sealing door 16, and start the mechanical pump 31, molecular pump 5, throttle valve 6, molecular trap 7, and heater 8 through the control device 20 and power supply 11 to maintain the stability of the vacuum in the vacuum chamber 1.

[0042] An alternating magnetic field is then applied to the induction coil 13 via the power supply 11 and the input electrode 30. This alternating magnetic field generates an alternating current, which induces heat in the high-purity metallized target material, causing it to melt. At this point, the baffle 29 blocks the area directly above the crucible 15, allowing the melted high-purity metal target material to further vaporize and volatilize. The volatilization process is unstable, and the volatile substances deposit on the baffle 29. Once the volatilization stabilizes, the cylinder 27 and the third rotating magnetic fluid 28 rotate the baffle 29 to the side.

[0043] At this point, crucible 15 is directly facing sample body 10, which is in a cold state. The volatilized metal molecules are deposited on sample body 10. Sample body 10 has tiny pores. To ensure the uniformity of the high-purity metallization layer thickness on the pore surface and other surfaces, the drive assembly is activated, causing sample body 10 to swing at a certain amplitude. Furthermore, sample body 10 rotates continuously during the swinging process, which helps the metallization layer molecules to be deposited on sample body 10 at a reasonable angle. After the A-side of sample body 10 is coated, it can be automatically rotated 180° to directly switch to the B-side for high-purity metallization layer preparation.

[0044] The system can be configured with a high-power liquid evaporation source or a multi-station E-type electron gun evaporation source according to the requirements of the metallization layer, or it can be configured with a multi-target planar target; thus satisfying the deposition of single metallization layers, composite metallization layers or multi-layer metallization layers; it can also be used for laboratory metallization layer equipment experiments.

[0045] The technical features of the above embodiments can be combined in any way (as long as there is no contradiction in the combination of these technical features). For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described; these embodiments not explicitly written should also be considered to be within the scope of this specification.

Claims

1. A device for surface preparation of deep hole ratio disc parts with high purity metal layer, comprising a vacuum chamber (1), a driving assembly and an evaporation source, characterized in that, A sealing door (16) is installed on the left side of the vacuum chamber (1) via a door hinge (17). A throttle valve (6) is provided on the upper outer side of the vacuum chamber (1), and a molecular pump (5) is installed on the upper outer side of the throttle valve (6). A molecular trap (7) is provided on the top inner side of the vacuum chamber (1), and a heater (8) is installed on the side of the molecular trap (7). A drive assembly is provided on the outer rear end of the vacuum chamber (1). The output end of the drive assembly is connected to a sample holder (9) located inside the vacuum chamber (1). The sample holder (9) contains a sample body (10) and is used to drive the double-sided switching when preparing a high-purity metallization layer on the surface of the sample body (10). An evaporation source is provided at the bottom inner side of the vacuum chamber (1), and the evaporation source is located directly below the sample body (10). A baffle (29) is rotatably provided on the outer side of the evaporation source.

2. The apparatus for preparing a high-purity metallization layer on the surface of a deep-hole disc-shaped component according to claim 1, characterized in that, A cabinet (32) for support is provided on the lower outer side of the vacuum chamber (1), and a power supply (11) located outside the vacuum chamber (1) is installed on the upper right side of the cabinet (32). A control device (20) electrically connected to the power supply (11) is installed on the front side of the cabinet (32), and a mechanical pump (31) is provided on the rear side of the cabinet (32).

3. The apparatus for preparing a high-purity metallization layer on the surface of a deep-hole disc-type component according to claim 1, characterized in that, The vacuum chamber (1) is equipped with lining plates (4) on all four sides of its inner wall.

4. The apparatus for preparing a high-purity metallization layer on the surface of a deep-hole disc-type component according to claim 1, characterized in that, The side wall of the vacuum chamber (1) is provided with an ion source (12) and an electric electrode (30) from top to bottom, and the electric electrode (30) is electrically connected to the evaporation source and the power source (11) respectively.

5. The apparatus for preparing a high-purity metallization layer on the surface of a deep-hole-ratio disk-type component according to claim 1, characterized in that, The evaporation source includes an induction coil (13), a heat insulation layer (14), and a crucible (15). The induction coil (13) is installed on the bottom of the inner side of the vacuum chamber (1) via a base, and the heat insulation layer (14) is provided inside the induction coil (13), and the crucible (15) is provided inside the heat insulation layer (14).

6. The apparatus for preparing a high-purity metallization layer on the surface of a deep-hole-ratio disk-type component according to claim 1, characterized in that, A third rotating magnetic fluid (28) is installed on the right side of the lower surface of the vacuum chamber (1), and a cylinder (27) is provided on the outer side of the lower end of the third rotating magnetic fluid (28). The output end of the third rotating magnetic fluid (28) is connected to a baffle (29) to drive the baffle (29) to rotate, and the rotation angle of the baffle (29) is less than 180°.

7. The apparatus for preparing a high-purity metallization layer on the surface of a deep-hole disc-shaped component according to claim 1, characterized in that, The molecular trap (7), sample body (10), baffle (29) and evaporation source are arranged in order from top to bottom inside the vacuum chamber (1).

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