Photosensitive structure and wide photosensitive range image sensor

Abstract

The application provides a photosensitive structure and a wide photosensitive range image sensor. The photosensitive structure comprises a plurality of photosensitive units, the materials of at least two photosensitive units are different, and the photosensitive wavelength range of at least one photosensitive unit is invisible light, so that the photosensitive wavelength range width of the photosensitive structure is greater than that of an RGB image sensor. The photosensitive wavelength range of at least one kind of material of the photosensitive unit of the photosensitive structure is invisible light, so that the photosensitive wavelength range width of the photosensitive structure can be greater than that of the RGB image sensor, the photosensitive wavelength range width of the photosensitive structure is increased, the photosensitive wavelength range width of the photosensitive structure can be greater than that of the RGB image sensor, and wide photosensitive range is realized.

Description

Technical Field

[0001] This application relates to the field of photosensitive structure technology, specifically to photosensitive structures and wide-range photosensitive image sensors. Background Technology

[0002] Image sensing technology is a crucial element in modern information acquisition and is widely used in numerous fields such as consumer electronics, industrial inspection, security monitoring, autonomous driving, and biomedical imaging. Among them, image sensors such as CMOS image sensors have become the mainstream solution in the current market due to their mature technology, controllable cost, and high integration.

[0003] Image sensors mainly consist of photosensitive structures and filter structures. However, the photosensitive structures in related technologies suffer from a narrow sensing range and limited information acquisition. Utility Model Content

[0004] Embodiments of this application provide a photosensitive structure and a wide photosensitive range image sensor.

[0005] In a first aspect, embodiments of this application provide a photosensitive structure including a plurality of photosensitive units, at least two of the photosensitive units being made of different materials, and at least one of the photosensitive units having a photosensitive wavelength of invisible light, so that the photosensitive wavelength width of the photosensitive structure is greater than the photosensitive wavelength width of an RGB image sensor.

[0006] In one embodiment, the plurality of photosensitive units are arranged in a matrix.

[0007] In one embodiment, the plurality of photosensitive units include a first photosensitive unit, a second photosensitive unit, a third photosensitive unit, a fourth photosensitive unit, and a fifth photosensitive unit, wherein the first photosensitive unit, the second photosensitive unit, and the third photosensitive unit are sequentially connected along a first direction, and the fourth photosensitive unit, the second photosensitive unit, and the fifth photosensitive unit are sequentially connected along a second direction, wherein the first direction and the second direction are perpendicular to each other; or,

[0008] The multiple photosensitive units are arranged in a cross shape.

[0009] In one embodiment, the material of the photosensitive unit includes at least one selected from indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenide, indium antimony arsenide, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon oxide, silicon carbide, and zinc oxide.

[0010] In one embodiment, the photosensitive structure has a photosensitive wavelength range of 200 nm to 14600 nm.

[0011] In one embodiment, the photosensitive structure includes an RGB photosensitive component and an invisible light photosensitive component connected in sequence. The RGB photosensitive component includes a red photosensitive unit, a green photosensitive unit, and a blue photosensitive unit, which are connected in sequence.

[0012] In one embodiment, the red photosensitive unit, the green photosensitive unit, the blue photosensitive unit, and the invisible light photosensitive component are arranged to form a square photosensitive area.

[0013] In one embodiment, an installation area is formed at the angle between the red photosensitive unit and the blue photosensitive unit, and the invisible light photosensitive component is disposed in the installation area.

[0014] In one embodiment, the invisible light sensing component includes at least one of an infrared photosensitive unit and an ultraviolet photosensitive unit.

[0015] Secondly, embodiments of this application provide a wide photosensitive range image sensor, including the photosensitive structure described above.

[0016] In one embodiment, the wide photosensitive range image sensor includes a plurality of photosensitive structures, which are spliced ​​together.

[0017] Thirdly, embodiments of this application provide a method for preparing a photosensitive structure, comprising:

[0018] Obtain the substrate;

[0019] Multiple photosensitive units are constructed in different regions of the substrate. The multiple photosensitive units include at least two different materials, and at least one of the photosensitive units has a photosensitive wavelength of invisible light, so as to form a photosensitive structure with a photosensitive wavelength width greater than that of visible light.

[0020] In one embodiment, the step of constructing multiple photosensitive units in different regions of the substrate includes:

[0021] A photosensitive unit of a first material is constructed in a first region of the substrate, and a photosensitive unit of a second material is constructed in a second region of the substrate.

[0022] Fourthly, embodiments of this application provide a method for preparing a photosensitive structure, comprising:

[0023] Obtain the RGB photosensitive layer;

[0024] Remove the RGB photosensitive material from the target area of ​​the RGB photosensitive layer;

[0025] The target area is filled with a target photosensitive material that can capture invisible light, so that the photosensitive wavelength of the RGB photosensitive layer is greater than that of the RGB image sensor.

[0026] In one embodiment, the RGB photosensitive layer includes red photosensitive units, a first green photosensitive unit, a second green photosensitive unit, and a blue photosensitive unit; the step of removing the RGB photosensitive material from the target area of ​​the RGB photosensitive layer includes:

[0027] Remove the photosensitive material from the second green photosensitive unit.

[0028] Fifthly, embodiments of this application provide a method for fabricating a wide-range photosensitive image sensor, comprising:

[0029] Obtain the RGB photosensitive chip;

[0030] Remove the filter material and RGB photosensitive material from the target area of ​​the RGB photosensitive chip;

[0031] The target area is filled with a target material that is different from the RGB photosensitive material, so that the photosensitive wavelength range of the RGB photosensitive chip is greater than that of the visible light wavelength range;

[0032] A filter layer is constructed on the target material to filter light entering the target material, wherein the wavelength of light that can pass through the filter layer is different from the wavelength of light that can pass through the filter material.

[0033] Sixthly, embodiments of this application provide an electronic device including the photosensitive structure described above.

[0034] The beneficial effects of the embodiments of this application are as follows:

[0035] In the embodiments of this application, the photosensitive structure includes at least two photosensitive units made of different materials. The photosensitive units made of different materials have different light-sensing ranges. That is, the photosensitive structure includes at least two photosensitive units with different light-sensing ranges. At least one of the photosensitive units made of different materials is sensitive to invisible light. This allows the light-sensing band width of the photosensitive structure to be greater than that of the RGB image sensor, thereby increasing the light-sensing band width of the photosensitive structure and achieving a wide light-sensing range. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is one of the schematic diagrams of the photosensitive structure provided in the embodiments of this application;

[0038] Figure 2 This is a second schematic diagram of the photosensitive structure provided in the embodiments of this application;

[0039] Figure 3 This is a schematic diagram of the cross-shaped photosensitive structure provided in an embodiment of this application;

[0040] Figure 4 This is a matrix-distributed photosensitive structure provided in the embodiments of this application;

[0041] Figure 5 This is a schematic diagram of the photosensitive structure provided in an embodiment of this application, in which the wavelength range and material of each photosensitive unit are marked.

[0042] Figure 6 This is a flowchart of a method for preparing a photosensitive structure provided in an embodiment of this application. Detailed Implementation

[0043] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0044] The following is combined with Figures 1 to 6 This application describes the photosensitive structure and wide photosensitive range image sensor.

[0045] According to the embodiments of the first aspect of this application, such as Figure 1 and Figure 2The photosensitive structure includes multiple photosensitive units 1, at least two of which are made of different materials, and at least one of the photosensitive units 1 has a photosensitive wavelength of invisible light, so that the photosensitive wavelength width of the photosensitive structure is greater than that of the RGB image sensor.

[0046] According to the photosensitive structure of the embodiments of this application, the photosensitive structure includes at least two photosensitive units 1 made of different materials. The photosensitive units 1 made of different materials have different light-sensing ranges. That is, the photosensitive structure includes at least two photosensitive units 1 with different light-sensing ranges. The light-sensing band of at least one of the photosensitive units 1 is invisible light. This makes the light-sensing band width of the photosensitive structure greater than that of the RGB image sensor, thereby increasing the light-sensing band width of the photosensitive structure and achieving a wide light-sensing range. This effectively increases the information acquired by the photosensitive structure.

[0047] It should be noted that the photosensitive wavelength width of the photosensitive structure is greater than that of the RGB image sensor. This can refer to the photosensitive wavelength width of the photosensitive structure including the photosensitive range of both RGB and non-RGB image sensors.

[0048] The photosensitive band width of the photosensitive structure is greater than that of the RGB image sensor. This can also mean that the photosensitive range of the photosensitive structure may include part of the photosensitive range of the RGB image sensor, or may not include the photosensitive range of the RGB image sensor.

[0049] In some examples, the photosensitive structure may include two photosensitive units 1, in which case the two photosensitive units 1 are made of different materials. The photosensitive structure may also include three or more photosensitive units 1, in which case at least two photosensitive units 1 are made of different materials.

[0050] It should be noted that the different materials of photosensitive unit 1 can refer to different photosensitive units 1 having completely different materials, or it can refer to different parts of the material of different photosensitive units 1.

[0051] In other words, the light-sensing range of photosensitive units 1 made of different materials can be completely different or only partially different.

[0052] It is understandable that in related technologies, the photosensitive structure of RGB image sensors has a photosensitive range of R-band + G-band + B-band. However, this application utilizes at least two photosensitive units made of different materials, enabling the photosensitive band width of the photosensitive structure to be greater than that of the RGB image sensor, thus achieving a wide photosensitive range.

[0053] In some embodiments, such as Figure 4 Multiple photosensitive units 1 are arranged in a matrix.

[0054] It should be noted that the multiple photosensitive units 1 can be arranged in a square matrix or in a rectangular matrix.

[0055] In some embodiments, the plurality of photosensitive units 1 are arranged in a cross shape. That is, the plurality of photosensitive units 1 of the photosensitive structure are arranged in a cross shape, which is beneficial for splicing between the plurality of photosensitive structures.

[0056] It should be noted that the number of photosensitive units 1 on both sides of the photosensitive structure can be equal or unequal. That is, the number of photosensitive units 1 on one side of the photosensitive structure can be greater than the number of photosensitive units 1 on the other side.

[0057] In some embodiments, such as Figure 3 The plurality of photosensitive units 1 include a first photosensitive unit 11, a second photosensitive unit 12, a third photosensitive unit 13, a fourth photosensitive unit 14, and a fifth photosensitive unit 15. The first photosensitive unit 11, the second photosensitive unit 12, and the third photosensitive unit 13 are connected in sequence along a first direction, and the fourth photosensitive unit 14, the second photosensitive unit 12, and the fifth photosensitive unit 15 are connected in sequence along a second direction. The first direction and the second direction are perpendicular to each other.

[0058] In other words, with the second photosensitive unit 12 as the center, the first photosensitive unit 11, the third photosensitive unit 13, the fourth photosensitive unit 14, and the fifth photosensitive unit 15 are arranged around the second photosensitive unit 12. The first photosensitive unit 11 and the third photosensitive unit 13 are arranged opposite each other, and the fourth photosensitive unit 14 and the fifth photosensitive unit 15 are arranged opposite each other, so that the multiple photosensitive units 1 are distributed in a cross-shaped structure, which facilitates the splicing of different photosensitive structures.

[0059] It should be noted that this embodiment is only used as an example with five photosensitive units 1, and there is no special limitation on the number of photosensitive units 1. For example, the number of the first photosensitive unit 11, the third photosensitive unit 13, the fourth photosensitive unit 14, and the fifth photosensitive unit 15 can all be two or more.

[0060] In some embodiments, such as Figure 5 The photosensitive unit 1 is made of at least one of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenide, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon oxide, silicon carbide, and zinc oxide. In other words, at least two of the at least two different materials in the photosensitive unit 1 can be any two of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenide, gallium nitride, aluminum gallium nitride, silicon carbide, and zinc oxide.

[0061] For example, photosensitive unit 1 with a photosensitive wavelength range of 200nm to 400nm can be made of gallium nitride. Photosensitive unit 1 with a photosensitive wavelength range of 460nm to 650nm can be made of silicon dioxide. Photosensitive unit 1 with a photosensitive wavelength range of 850nm to 1700nm can be made of indium gallium arsenide. Photosensitive unit 1 with a photosensitive wavelength range of 2000nm to 5000nm can be made of mercury cadmium telluride. Photosensitive unit 1 with a photosensitive wavelength range of 8000nm to 1400nm can be made of indium antimonide.

[0062] In some embodiments, the photosensitive band of the photosensitive structure is from 200nm to 14600nm, so that the photosensitive range of the photosensitive structure is from 200nm to 14600nm, thereby making the photosensitive band width of the photosensitive structure greater than the photosensitive band width of the RGB image sensor, thus achieving a wide photosensitive range.

[0063] In one embodiment of this application, such as Figure 1 The photosensitive structure includes an RGB photosensitive component 2 and an invisible light photosensitive component 3 connected in sequence. The RGB photosensitive component 2 is used to convert light in the red, green and blue bands into electrical signals, and the invisible light photosensitive component 3 is used to convert light in the target band into electrical signals. The target band is different from the photosensitive band of the RGB photosensitive component 2.

[0064] It is understandable that the photosensitive band of RGB photosensitive component 2 is the visible light band, while the photosensitive band of invisible light photosensitive component 3 is the target band, and the target band is different from the photosensitive band of RGB photosensitive component 2. In other words, the photosensitive structure, which includes both RGB photosensitive component 2 and invisible light photosensitive component 3, encompasses both the visible light band and the target band. This means that the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor, enabling the photosensitive structure to achieve a wide light-sensing range.

[0065] In some examples, the target wavelength is, for example, the invisible light wavelength.

[0066] In one embodiment of this application, such as Figure 1 The RGB photosensitive component 2 includes a red photosensitive unit 21, a green photosensitive unit 22, and a blue photosensitive unit 23, which are connected in sequence as a non-visible light photosensitive component 3.

[0067] It is understandable that the red photosensitive unit 21, the green photosensitive unit 22, the blue photosensitive unit 23, and the invisible light photosensitive component 3 are connected in sequence to form a photosensitive structure, which increases the photosensitive wavelength range of the photosensitive structure.

[0068] Specifically, the red photosensitive unit 21, the green photosensitive unit 22, the blue photosensitive unit 23, and the invisible light photosensitive component 3 are arranged to form a square photosensitive area.

[0069] Understandably, the RGB photosensitive structure in related technologies generally includes an R photosensitive unit, a B photosensitive unit, and two G photosensitive units. The R and B photosensitive units are diagonally distributed, as are the two G photosensitive units. By replacing one of the G photosensitive units with an invisible light photosensitive component 3, the red photosensitive unit 21, the green photosensitive unit 22, the blue photosensitive unit 23, and the invisible light photosensitive component 3 are arranged to form a square photosensitive area, thereby enabling the photosensitive structure to simultaneously cover both the visible and invisible light bands.

[0070] Specifically, an installation area is formed at the angle between the red photosensitive unit 21 and the blue photosensitive unit 23, and the invisible light photosensitive component 3 is located in the installation area.

[0071] It is understandable that one of the G photosensitive units 1 in the RGB photosensitive structure in the relevant technology is eliminated by etching or any other suitable means to form an installation area, thereby facilitating the setting of the invisible light photosensitive component 3, so that the invisible light photosensitive component 3 can be connected with the RGB photosensitive component 2 to form a photosensitive structure.

[0072] Specifically, the invisible light sensing component 3 includes at least one of an infrared photosensitive unit and an ultraviolet photosensitive unit.

[0073] It is understandable that when the invisible light sensing component 3 includes an infrared sensing unit, the photosensitive band of the photosensitive structure includes the infrared band, which makes the photosensitive band width of the photosensitive structure greater than the photosensitive band width of the RGB image sensor.

[0074] When the invisible light sensing component 3 includes an ultraviolet light sensing unit, the light-sensing band of the light-sensing structure includes the ultraviolet band, which makes the light-sensing band width of the light-sensing structure greater than the light-sensing band width of the RGB image sensor.

[0075] According to an embodiment of the second aspect of this application, a wide photosensitive range image sensor includes the photosensitive structure described above.

[0076] According to the wide photosensitive range image sensor of this application embodiment, the photosensitive structure includes at least two photosensitive units 1 made of different materials. The photosensitive units 1 made of different materials have different photosensitive ranges. That is, the photosensitive structure includes at least two photosensitive units 1 with different photosensitive ranges. The photosensitive band of at least one of the photosensitive units 1 is invisible light, thereby making the photosensitive band width of the photosensitive structure greater than the photosensitive band width of the RGB image sensor, thus increasing the photosensitive band width of the photosensitive structure and achieving a wide photosensitive range.

[0077] In some examples, wide-range image sensors include multiple photosensitive structures that are stitched together.

[0078] According to the embodiments of the third aspect of this application, such as Figure 6 Methods for preparing photosensitive structures include...

[0079] Step 101: Obtain the substrate;

[0080] Step 102: Construct multiple photosensitive units in different regions of the substrate. The multiple photosensitive units include at least two different materials. At least one photosensitive unit has a photosensitive wavelength of invisible light, so as to form a photosensitive structure with a photosensitive wavelength width greater than that of the visible light wavelength.

[0081] It is understandable that by constructing at least two photosensitive units of different materials in different regions of the substrate, the photosensitive units of different materials have different light-sensing ranges. That is, the photosensitive structure includes at least two photosensitive units with different light-sensing ranges. At the same time, the light-sensing band of one of the photosensitive units is the invisible light band, which makes the light-sensing band width of the photosensitive structure greater than the light-sensing band width of the RGB image sensor, thus achieving a wide light-sensing range.

[0082] In some embodiments, the step of constructing multiple photosensitive units in different regions of the substrate includes:

[0083] A photosensitive unit of a first material is constructed in the first region of the substrate, and a photosensitive unit of a second material is constructed in the second region of the substrate.

[0084] It is understandable that photosensitive units are constructed in different regions of the substrate to form a photosensitive structure. The photosensitive units in the first and second regions are made of different materials, and the photosensitive structure includes at least two photosensitive units of different materials. The photosensitive units of different materials have different light-sensitive ranges; that is, the photosensitive structure includes at least two photosensitive units with different light-sensitive ranges. This allows the photosensitive wavelength range of the photosensitive structure to be greater than that of an RGB image sensor, increasing the light-sensitive wavelength range and thus enabling the photosensitive structure to have a wider light-sensitive range than visible light, achieving a wide light-sensitive range.

[0085] According to an embodiment of the fourth aspect of this application, a method for preparing a photosensitive structure includes:

[0086] Obtain the RGB photosensitive layer;

[0087] Remove the RGB photosensitive material from the target area of ​​the RGB photosensitive layer;

[0088] The target area is filled with a target photosensitive material that can capture invisible light, so that the photosensitive band width of the RGB photosensitive layer is greater than that of the RGB image sensor.

[0089] It is understood that in this embodiment, an RGB photosensitive layer is directly obtained as a substrate. Then, the RGB photosensitive material in the target area of ​​the RGB photosensitive layer is removed, and then the target area is filled with a target photosensitive material. The target photosensitive material is different from the RGB photosensitive material. The photosensitive units of different materials have different light-sensing ranges. The target photosensitive material can capture invisible light. Therefore, the light-sensing range of the photosensitive units in the target area will be different from that of the RGB photosensitive units in other areas. As a result, the light-sensing range of the prepared photosensitive structure includes both visible and invisible light, expanding the light-sensing wavelength of the RGB photosensitive layer. This makes the light-sensing wavelength of the RGB photosensitive layer greater than the visible light wavelength, increasing the light-sensing range of the photosensitive structure. This allows the light-sensing range of the photosensitive structure to be greater than that of visible light, achieving a wide light-sensing range.

[0090] Furthermore, this embodiment directly uses the existing RGB photosensitive layer to form the photosensitive structure, realizing the reuse of the existing RGB photosensitive layer, which helps to simplify the preparation process and reduce costs.

[0091] Understandably, RGB photosensitive material in the target area of ​​the RGB photosensitive layer can be removed by etching or any other suitable process.

[0092] In some embodiments, the RGB photosensitive layer includes red photosensitive units, a first green photosensitive unit, a second green photosensitive unit, and a blue photosensitive unit; the step of removing RGB photosensitive material from the target area of ​​the RGB photosensitive layer includes:

[0093] Remove the photosensitive material from the second green photosensitive unit.

[0094] Understandably, the photosensitive material at the second green photosensitive unit is removed, making the area where the second green photosensitive unit is located the target area. Then, the target area is filled with the target material to form a new photosensitive unit. Since the target material is different from the RGB photosensitive material, the new photosensitive unit's photosensitive range is invisible light, thus obtaining a photosensitive structure with a wide photosensitive range. Furthermore, it achieves the reuse of the RGB photosensitive layer, which simplifies the fabrication process and reduces costs.

[0095] According to an embodiment of the fifth aspect of this application, a method for fabricating a wide-sensitivity image sensor includes:

[0096] Obtain the RGB photosensitive chip;

[0097] Remove the filter material and RGB photosensitive material from the target area of ​​the RGB photosensitive chip;

[0098] The target area is filled with a target material that is different from the RGB photosensitive material, so that the photosensitive wavelength range of the RGB photosensitive chip is greater than that of the visible light band.

[0099] It is understandable that, using an RGB photosensitive chip as a substrate, the filter material and RGB photosensitive material in the target area of ​​the RGB photosensitive chip are removed, and then the target material is filled in the target area. Since the target material is different from the RGB photosensitive material, the photosensitive unit 1 formed in the target area is not in the visible light range. As a result, the photosensitive range of the prepared wide photosensitive range image sensor includes both visible and invisible light, thus achieving a wide photosensitive range.

[0100] In some examples, after filling the target area with target material, a filter layer is constructed on the target material to form a complete wide-range image sensor. The filter layer is used to filter light entering the target material, wherein the wavelength of light that can pass through the filter layer is different from the wavelength of light that can pass through the filter material.

[0101] Understandably, the filter material and RGB photosensitive material in the target area of ​​the RGB photosensitive chip can be removed by etching or any other suitable process.

[0102] According to an embodiment of the sixth aspect of this application, the electronic device includes the photosensitive structure described above.

[0103] According to the embodiments of this application, the electronic device has a photosensitive structure including at least two photosensitive units 1 made of different materials. The photosensitive units 1 made of different materials have different light-sensing ranges. That is, the photosensitive structure includes at least two photosensitive units 1 with different light-sensing ranges, thereby increasing the light-sensing range of the photosensitive structure to be greater than that of the RGB image sensor. This increases the light-sensing range of the photosensitive structure, making it larger than that of the RGB image sensor. Consequently, the wide light-sensing range image sensor can achieve a wide light-sensing range, enabling the electronic device to collect information in both the visible and invisible light bands.

[0104] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A photosensitive structure, characterized in that, It includes multiple photosensitive units, at least two of which are made of different materials, and at least one of the photosensitive units has a photosensitive wavelength of invisible light, so that the photosensitive wavelength of the photosensitive structure is greater than the photosensitive wavelength of the RGB image sensor.

2. The photosensitive structure according to claim 1, characterized in that, The multiple photosensitive units are arranged in a matrix.

3. The photosensitive structure according to claim 1, characterized in that, The plurality of photosensitive units include a first photosensitive unit, a second photosensitive unit, a third photosensitive unit, a fourth photosensitive unit, and a fifth photosensitive unit, wherein the first photosensitive unit, the second photosensitive unit, and the third photosensitive unit are connected sequentially along a first direction, and the fourth photosensitive unit, the second photosensitive unit, and the fifth photosensitive unit are connected sequentially along a second direction, wherein the first direction and the second direction are perpendicular to each other; or, The multiple photosensitive units are arranged in a cross shape.

4. The photosensitive structure according to claim 1, characterized in that, The material of the photosensitive unit includes at least one of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenide, indium antimony arsenide, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon oxide, silicon carbide, and zinc oxide.

5. The photosensitive structure according to claim 1, characterized in that, The photosensitive structure has a photosensitive wavelength range of 200nm to 14600nm.

6. The photosensitive structure according to any one of claims 1 to 5, characterized in that, The photosensitive structure includes an RGB photosensitive component and an invisible light photosensitive component connected in sequence. The RGB photosensitive component includes a red photosensitive unit, a green photosensitive unit, and a blue photosensitive unit, which are connected in sequence.

7. The photosensitive structure according to claim 6, characterized in that, The red photosensitive unit, the green photosensitive unit, the blue photosensitive unit, and the invisible light photosensitive component are arranged to form a square photosensitive area.

8. The photosensitive structure according to claim 6, characterized in that, An installation area is formed at the angle between the red photosensitive unit and the blue photosensitive unit, and the invisible light photosensitive component is disposed in the installation area.

9. The photosensitive structure according to claim 6, characterized in that, The invisible light sensing component includes at least one of an infrared photosensitive unit and an ultraviolet photosensitive unit.

10. A wide-range photosensitive image sensor, characterized in that, Includes the photosensitive structure as described in any one of claims 1 to 9.

11. The wide photosensitive range image sensor according to claim 10, characterized in that, The wide photosensitive range image sensor includes multiple photosensitive structures, which are spliced ​​together.

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