HJT结构及太阳能电池

By replacing the intrinsic hydrogenated amorphous silicon thin film with a tunneling oxide layer prepared from silicon oxide in HJT cells, the problem of silicon-hydrogen bond breakage under ultraviolet light irradiation was solved, improving the stability and conversion efficiency of the cells, and enhancing the passivation and carrier transport performance of the cells.

CN224521500UActive Publication Date: 2026-07-17TRINA SOLAR CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
TRINA SOLAR CO LTD
Filing Date
2025-06-20
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

The intrinsic hydrogenated amorphous silicon thin film of HJT batteries is prone to fracture under high-energy ultraviolet light irradiation, which leads to an increase in defects at the amorphous silicon/crystalline silicon heterostructure interface and reduces the battery conversion efficiency.

Method used

By replacing the intrinsic hydrogenated amorphous silicon film with a tunneling oxide layer made of silicon oxide, more stable silicon-oxygen bonds are formed, reducing the breakage of weak bonds caused by ultraviolet light irradiation. Combined with the stacked arrangement of the tunneling oxide layer and the doped layer, the field passivation effect of the battery is improved.

Benefits of technology

It improves the stability and conversion efficiency of HJT batteries under ultraviolet light irradiation, reduces the generation of ultraviolet-induced defects, and enhances the passivation performance and carrier transport performance of the batteries.

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Abstract

本申请涉及到太阳能电池技术领域，尤其涉及一种HJT结构及太阳能电池。该HJT结构包括：硅基底，硅基底包括相对设置的第一面和第二面；位于所述硅基底的所述第一面且沿第一方向依次层叠设置的隧穿氧化层、掺杂层、第一导电层和第一金属电极；位于所述硅基底的所述第二面且沿第二方向依次层叠设置的本征氢化非晶硅层、微晶 / 非晶硅层、第二导电层和第二金属电极；其中，隧穿氧化层的材料为氧化硅。本申请可以通过采用氧化硅制备的隧穿氧化层替换本征氢化非晶硅薄膜，在硅基底表面上形成更为稳定的及键能更大的硅氧键，降低硅基底表面缺陷，提高表面钝化效果；硅氧键降低紫外光照射所造成的弱键断裂的情况，从而提高了电池的转化效率。
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Claims

1. A HJT structure, characterized in that, include: A silicon substrate (1) comprising a first surface and a second surface disposed opposite to each other; A tunneling oxide layer (2), a doped layer (3), a first conductive layer (4) and a first metal electrode (5) are sequentially stacked on the first surface of the silicon substrate (1) along the first direction (A); An intrinsic hydrogenated amorphous silicon layer (6), a microcrystalline / amorphous silicon layer (7), a second conductive layer (8), and a second metal electrode (9) are sequentially stacked on the second surface of the silicon substrate (1) along the second direction (B). The material of the tunneling oxide layer (2) is silicon oxide.

2. The HJT structure according to claim 1, characterized in that, A first silicon-based quantum dot conversion layer (10) is disposed on the side of the first conductive layer (4) away from the doped layer (3); and / or A second silicon-based quantum dot conversion layer (11) is provided on the side of the second conductive layer (8) away from the microcrystalline / amorphous silicon layer (7).

3. The HJT structure according to claim 2, characterized in that, The thickness of the first silicon-based quantum dot conversion layer (10) and / or the second silicon-based quantum dot conversion layer (11) is 20~50nm.

4. The HJT structure according to claim 2, characterized in that, The raw materials for the first silicon-based quantum dot conversion layer (10) and / or the second silicon-based quantum dot conversion layer (11) include silane coupling agent, reducing agent and water.

5. The HJT structure according to any one of claims 1 to 4, characterized in that, The material of the first conductive layer (4) and / or the second conductive layer (8) is one of ITO, AZO, ATO and FTO.

6. The HJT structure according to any one of claims 1 to 4, characterized in that, The doping element of the doped layer (3) includes one of carbon, nitrogen and oxygen.

7. The HJT structure according to any one of claims 1 to 4, characterized in that, The doped layer (3) is one of the following: oxygen-doped microcrystalline silicon layer, nitrogen-doped microcrystalline silicon layer, carbon-doped microcrystalline silicon layer, oxygen-doped amorphous silicon layer, nitrogen-doped amorphous silicon layer, and carbon-doped amorphous silicon layer.

8. The HJT structure according to any one of claims 1 to 4, characterized in that, The thickness of the doped layer (3) is 10~50nm.

9. The HJT structure according to any one of claims 1 to 4, characterized in that, The thickness of the tunneling oxide layer (2) is 0.5~2nm.

10. A solar cell, characterized by, Includes the HJT structure as described in any one of claims 1 to 9.