Temperature control device and temperature control system

Abstract

This application provides a temperature control device and a temperature control system. The temperature control device includes a primary temperature regulating module and a semiconductor temperature control module. The primary temperature regulating module includes a storage component and a heating component installed on the storage component. The storage component has a first liquid inlet, a first liquid outlet, a first liquid supply port, and a first liquid return port. The first liquid inlet and the first liquid outlet are configured to communicate with the liquid supply component, and the first liquid return port is configured to communicate with the drain port of the temperature-controlled object. The semiconductor temperature control module includes a heat exchange assembly and a control circuit. The heat exchange assembly includes a main heat exchange plate and a semiconductor temperature control chip disposed on the outer surface of the main heat exchange plate. The semiconductor temperature control chip is electrically connected to the control circuit. The main heat exchange plate has a second liquid inlet and a second liquid supply port. The second liquid inlet communicates with the first liquid supply port, and the second liquid supply port is configured to communicate with the liquid inlet of the temperature-controlled object. This device has strong dynamic temperature adjustment capability, high adjustment accuracy, and fast response speed, which can meet the molding requirements of high-precision, complex structure products.

Description

Technical Field

[0001] This application relates to the field of temperature control technology, and in particular to a temperature control device and a temperature control system. Background Technology

[0002] Mold temperature control is a core aspect of the injection molding process, directly affecting product quality, production efficiency, and energy consumption.

[0003] In related technologies, mold temperature control mainly relies on water temperature controllers or oil temperature controllers, which use heating rods or steam to heat the medium (water or oil) to achieve heating and add cooling medium to achieve cooling. However, both water temperature controllers and oil temperature controllers have problems such as insufficient dynamic temperature adjustment capability, large thermal inertia, poor temperature adjustment accuracy, and response lag, making it difficult to meet the molding requirements of high-precision, complex structure products. Utility Model Content

[0004] This application provides a temperature control device and a temperature control system. The temperature control device has strong dynamic temperature adjustment capability, high adjustment accuracy and fast response speed, which can meet the molding requirements of high-precision and complex structure products.

[0005] One aspect of this application provides a temperature control device, comprising: a primary temperature control module, the primary temperature control module including a storage component and a heating component installed in the storage component, the storage component having a first liquid inlet, a first liquid outlet, a first liquid supply port and a first liquid return port, the first liquid inlet and the first liquid outlet being configured to communicate with the liquid supply component, and the first liquid return port being configured to communicate with the drain port of the temperature-controlled object; a semiconductor temperature control module, the semiconductor temperature control module including a heat exchange component and a control circuit, the heat exchange component including a main heat exchange plate and a semiconductor temperature control chip disposed on the outer surface of the main heat exchange plate, the semiconductor temperature control chip being electrically connected to the control circuit; wherein, the main heat exchange plate has a second liquid inlet and a second liquid supply port, the second liquid inlet communicating with the first liquid supply port, and the second liquid supply port being configured to communicate with the liquid inlet of the temperature-controlled object.

[0006] In one possible implementation, the heat exchange assembly further includes: an auxiliary heat exchange plate, which is stacked with the main heat exchange plate, and a semiconductor temperature control chip is disposed between the main heat exchange plate and the auxiliary heat exchange plate; wherein, the auxiliary heat exchange plate has a second return port and a second outlet port, the second return port is configured to communicate with the drain port of the temperature-controlled object, and the second outlet port is communicated with the first return port.

[0007] In one possible implementation, the auxiliary heat exchange plate includes a first auxiliary heat exchange plate and a second auxiliary heat exchange plate, which are located on opposite sides of the thickness direction of the main heat exchange plate.

[0008] In one possible implementation, the control circuit includes a circuit board and an H-bridge circuit, with the semiconductor temperature control chip connected to the circuit board via the H-bridge circuit.

[0009] In one possible implementation, the circuit board is disposed on one side of the heat exchange assembly in the thickness direction.

[0010] In one possible implementation, the control circuit further includes a control switch configured to send a temperature control signal to the circuit board when the object to be controlled is in a state of temperature control.

[0011] In one possible implementation, there are multiple semiconductor temperature control plates, and each semiconductor temperature control plate is arranged in an array along the outer surface of the main heat exchange plate.

[0012] In one possible implementation, the heat exchange assembly further includes a heat insulation element, which is disposed in the same layer as the semiconductor temperature control sheet and surrounds the outer periphery of the semiconductor temperature control sheet.

[0013] In one possible implementation, the main heat exchange plate includes: a base plate, the base plate including a first inner sidewall and a second inner sidewall disposed opposite to each other; a first flow channel wall and a second flow channel wall are alternately disposed in sequence within the base plate, the first flow channel wall is connected to the first inner sidewall and the first flow channel wall and the second inner sidewall are spaced apart, the second flow channel wall is connected to the second inner sidewall and the second flow channel wall and the first inner sidewall are spaced apart; and a cover plate, the cover plate being disposed on the base plate.

[0014] Another aspect of this application provides a temperature control system, comprising: the aforementioned temperature control device; a temperature-controlled object, wherein the second liquid supply port of the semiconductor temperature control module in the temperature control device is connected to the liquid inlet of the temperature-controlled object, and the liquid outlet of the temperature-controlled object is connected to the first liquid return port of the primary temperature control module in the temperature control device.

[0015] The drain port of the temperature-controlled object is directly connected to the first return port of the primary temperature-regulating module, or the drain port of the temperature-controlled object is connected to the first return port of the primary temperature-regulating module in sequence through the second return port and the second outlet of the semiconductor temperature-regulating module.

[0016] This application provides a temperature control device and a temperature control system. The temperature control device includes a primary temperature regulating module and a semiconductor temperature control module. The primary temperature regulating module includes a storage component and a heating component installed in the storage component. The storage component has a first liquid inlet, a first liquid outlet, a first liquid supply port, and a first liquid return port. The first liquid inlet and the first liquid outlet are configured to communicate with the liquid supply component, and the first liquid return port is configured to communicate with the drain port of the object being controlled. The semiconductor temperature control module includes a heat exchange assembly and a control circuit. The heat exchange assembly includes a main heat exchange plate and a semiconductor temperature control chip disposed on the outer surface of the main heat exchange plate. The semiconductor temperature control chip is electrically connected to the control circuit. The main heat exchange plate has a second liquid inlet and a second liquid supply port. The second liquid inlet communicates with the first liquid supply port, and the second liquid supply port is configured to communicate with the inlet of the object being controlled.

[0017] In this way, the heating element can initially heat the medium in the storage container, rapidly bringing its temperature close to the target value. The medium then flows through the first supply port to the second inlet in the main heat exchange plate, allowing it to flow into the semiconductor temperature control module. The medium flowing into the main heat exchange plate exchanges heat with the semiconductor temperature control plate on its outer surface, enabling further fine-tuning of the medium temperature. After reaching the target value, the medium flows out through the second supply port and through the inlet of the temperature-controlled object, thus regulating the temperature of the object. After temperature regulation of the object, the medium flows from the outlet of the temperature-controlled object to the first return port and back into the storage container of the primary temperature control module, thereby achieving recycling of the medium among the primary temperature control module, the semiconductor temperature control module, and the temperature-controlled object.

[0018] Based on the Peltier effect of semiconductor temperature controllers, when energized, one end of the semiconductor temperature controller will experience a temperature decrease while the other end experiences a temperature increase. This phenomenon can be used to convert the electrical energy of the semiconductor temperature controller into heat energy. Furthermore, by utilizing the heating and cooling functions of the semiconductor temperature controller, precise regulation and control of the medium's temperature can be achieved. Moreover, semiconductor temperature controllers have low thermal inertia and short start-up time, resulting in a faster response speed for heating or cooling the medium.

[0019] The control circuit can switch the heating or cooling function of the semiconductor temperature control plate in real time to raise or lower the temperature of the medium, thereby achieving dynamic adjustment and timely response during the temperature control process. Furthermore, when applied to mold temperature control, it is beneficial for meeting the molding requirements of high-precision, complex-structured products.

[0020] In addition, the first liquid inlet and the first liquid outlet enable the connection between the primary temperature control module and the liquid supply unit, which is beneficial for the circulation and replacement of the medium between the liquid supply unit and the storage unit. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of a temperature control device provided in an embodiment of this application;

[0023] Figure 2 for Figure 1 A schematic diagram of the semiconductor temperature control module in the diagram;

[0024] Figure 3 for Figure 1A schematic diagram of the semiconductor temperature control module from another perspective;

[0025] Figure 4 for Figure 1 A structural schematic diagram of the semiconductor temperature control module from another perspective;

[0026] Figure 5 This is a partial exploded view of the semiconductor temperature control module provided in the embodiments of this application;

[0027] Figure 6 An exploded view of the main heat exchange plate provided in an embodiment of this application;

[0028] Figure 7 This is a schematic diagram of the composition of the temperature control system provided in an embodiment of this application.

[0029] Explanation of reference numerals in the attached figures:

[0030] 1-Temperature control system;

[0031] 10-Temperature control equipment;

[0032] 100 - Primary temperature control module;

[0033] 110 - Storage component; 111 - First liquid inlet; 112 - First liquid outlet; 113 - First liquid supply port; 114 - First liquid return port;

[0034] 120 - Heating element;

[0035] 200-Semiconductor temperature control module;

[0036] 210 - Heat exchanger assembly; 211 - Main heat exchanger plate; 2111 - Second liquid inlet; 2112 - Second liquid supply port; 2113 - Base plate; 21131 - First flow channel wall; 21132 - Second flow channel wall; 2114 - Cover plate;

[0037] 212-Semiconductor temperature control plate;

[0038] 213-Auxiliary heat exchange plate; 213a-First auxiliary heat exchange plate; 213b-Second auxiliary heat exchange plate; 2131-Second return port; 2132-Second outlet port;

[0039] 214 - Thermal insulation; 2141 - Receiving hole;

[0040] 220 - Control circuit; 221 - Circuit board; 2211 - Control chip; 222 - H-bridge circuit; 223 - Control switch; 224 - Power supply; 225 - Touch screen assembly;

[0041] 310 - First temperature sensor; 320 - Second temperature sensor; 330 - Third temperature sensor;

[0042] 400 - Flow sensor;

[0043] 500 - Water pump;

[0044] 600 - Fasteners;

[0045] 20 - Temperature-controlled object; 21 - Liquid inlet of temperature-controlled object; 22 - Liquid outlet of temperature-controlled object. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0047] As mentioned in the background section, the main method for controlling mold temperature is currently through mold temperature controllers. Depending on the heat transfer medium, mold temperature controllers can be divided into water temperature controllers and oil temperature controllers. Water temperature controllers have the advantages of being environmentally friendly, pollution-free, low-cost, and easy to maintain, while oil temperature controllers have the advantages of a wide temperature adjustment range, good thermal stability, and less scaling.

[0048] However, both water temperature controllers and oil temperature controllers have the following disadvantages:

[0049] (1) Insufficient dynamic temperature adjustment capability. Due to the high complexity of the temperature control logic, temperature control accuracy, heating power, and dynamic temperature adjustment function of existing water temperature controllers or oil temperature controllers, and the inability of the power to meet the requirements, the temperature is generally set to a fixed value during the production process.

[0050] Furthermore, existing mold temperature controllers do not support dynamic temperature adjustment and do not support independently programmable control of water / oil temperature. If the mold temperature is controlled at a constant temperature, it may cause defects in some products with complex structures and high surface quality requirements. For example, the flow of melt in the mold cavity will be accompanied by cooling due to heat loss, and premature cooling of the melt will hinder the continued filling of the melt in the mold cavity, causing defects.

[0051] Furthermore, during injection molding, frequent mold opening and closing, the filling of the mold cavity by high-temperature rubber, and changes in the ambient temperature around the production equipment can all increase mold temperature fluctuations, leading to significant temperature variations. Current rudimentary mold temperature control methods lack feedback and closed-loop control mechanisms, making it impossible to effectively and proactively control the mold temperature. This may negatively impact product quality control and stability.

[0052] (2) High thermal inertia and poor temperature regulation accuracy. Water temperature controllers or oil temperature controllers usually use heating rods to heat the water, which have high thermal inertia and are prone to temperature overshoot. Similarly, the method of adding cold water to cool down the water can also easily cause temperature overshoot.

[0053] For example, even after the heating rod stops heating, some of the stored heat inside remains unreleased. Even after the power is off, it continues to heat the medium, causing the medium's temperature to rise further. Due to the heating rod's high thermal inertia, this can affect the accuracy of medium temperature regulation.

[0054] When using cold water to cool down, the amount of water added cannot be accurately estimated at the beginning. Therefore, the amount of water added needs to be dynamically adjusted using a PID algorithm. This adjustment process takes time and can easily cause repeated fluctuations in the temperature of the medium.

[0055] (3) Slow response time. The heating location is usually equipped with a water tank or oil tank of a certain volume to store the medium, while the temperature measurement point of the medium is generally located downstream of the system. If the system takes corresponding measures after detecting a change in the medium temperature, there is a certain lag. For example, when the medium in the water tank or oil tank exceeds the temperature limit, the monitoring point cannot report the overheating in time due to the lag. After heating is stopped, the overheated medium in the water tank or oil tank cannot be discharged in time and still needs to be digested by the system to return to the normal temperature. Therefore, its response time is slow.

[0056] (4) Long production cycle and low production efficiency for a single product. In injection molding, cooling time accounts for 2 / 3 of the entire molding cycle. During this period, the mold holds pressure to cool the product. However, the existing mold temperature controller cannot reduce this part of the time, which in turn affects the production cycle of a single product.

[0057] In view of this, embodiments of this application provide a temperature control device and a temperature control system to solve one of the above problems. The temperature control device has strong dynamic temperature adjustment capability, high adjustment accuracy and fast response speed, which can meet the molding requirements of high-precision and complex structure products.

[0058] This application provides a temperature control device and a temperature control system. The temperature control device includes a primary temperature regulating module and a semiconductor temperature control module. The primary temperature regulating module includes a storage component and a heating component installed in the storage component. The storage component has a first liquid inlet, a first liquid outlet, a first liquid supply port, and a first liquid return port. The first liquid inlet and the first liquid outlet are configured to communicate with the liquid supply component, and the first liquid return port is configured to communicate with the drain port of the object being controlled. The semiconductor temperature control module includes a heat exchange assembly and a control circuit. The heat exchange assembly includes a main heat exchange plate and a semiconductor temperature control chip disposed on the outer surface of the main heat exchange plate. The semiconductor temperature control chip is electrically connected to the control circuit. The main heat exchange plate has a second liquid inlet and a second liquid supply port. The second liquid inlet communicates with the first liquid supply port, and the second liquid supply port is configured to communicate with the inlet of the object being controlled.

[0059] In this way, the heating element can initially heat the medium in the storage container, rapidly bringing its temperature close to the target value. The medium then flows through the first supply port to the second inlet in the main heat exchange plate, allowing it to flow into the semiconductor temperature control module. The medium flowing into the main heat exchange plate exchanges heat with the semiconductor temperature control plate on its outer surface, enabling further fine-tuning of the medium temperature. After reaching the target value, the medium flows out through the second supply port and through the inlet of the temperature-controlled object, thus regulating the temperature of the object. After temperature regulation of the object, the medium flows from the outlet of the temperature-controlled object to the first return port and back into the storage container of the primary temperature control module, thereby achieving recycling of the medium among the primary temperature control module, the semiconductor temperature control module, and the temperature-controlled object.

[0060] Based on the Peltier effect of semiconductor temperature controllers, when energized, one end of the semiconductor temperature controller will experience a temperature decrease while the other end experiences a temperature increase. This phenomenon can be used to convert the electrical energy of the semiconductor temperature controller into heat energy. Furthermore, by utilizing the heating and cooling functions of the semiconductor temperature controller, precise regulation and control of the medium's temperature can be achieved. Moreover, semiconductor temperature controllers have low thermal inertia and short start-up time, resulting in a faster response speed for heating or cooling the medium.

[0061] The control circuit can switch the heating or cooling function of the semiconductor temperature control plate in real time to raise or lower the temperature of the medium, thereby achieving dynamic adjustment and timely response during the temperature control process. Furthermore, when applied to mold temperature control, it is beneficial for meeting the molding requirements of high-precision, complex-structured products.

[0062] In addition, the first liquid inlet and the first liquid outlet enable the connection between the primary temperature control module and the liquid supply unit, which is beneficial for the circulation and replacement of the medium between the liquid supply unit and the storage unit.

[0063] The temperature control device 10 provided in the embodiments of this application will be described in detail below.

[0064] Figure 1 This is a schematic diagram of the temperature control device provided in an embodiment of this application. (Refer to...) Figure 1 As shown, this application embodiment provides a temperature control device 10, which includes a primary temperature regulating module 100 and a semiconductor temperature control module 200.

[0065] The primary temperature control module 100 includes a storage unit 110 and a heating element 120 installed in the storage unit 110. The storage unit 110 can be used to store a medium. The heating element 120 can be used to regulate the temperature of the medium stored in the storage unit 110 by raising or lowering its temperature.

[0066] It should be noted that the medium stored in the storage device 110 can be water, oil, or other heat transfer liquids, and no specific limitation is made here. The heating element 120 can be in the form of a heating rod, a positive temperature coefficient thermistor (PTC) integrated module, or steam heating, etc., and no specific limitation is made here.

[0067] The storage unit 110 has a first liquid inlet 111, a first liquid outlet 112, a first liquid supply port 113, and a first liquid return port 114. Thus, the medium in the storage unit 110 can be exchanged with the outside world through the first liquid inlet 111, the first liquid outlet 112, the first liquid supply port 113, and the first liquid return port 114.

[0068] Both the first liquid inlet 111 and the first liquid outlet 112 are connected to the liquid supply component (not marked in the figure), enabling the primary temperature control module 100 to connect with the liquid supply component. This facilitates the circulation and replacement of the medium between the liquid supply component and the storage component 110. The liquid supply component can be a cooling tower, a water tank, a storage tank, etc., and can be selected according to specific needs. No specific limitations are made here.

[0069] The first liquid supply port 113 can supply the medium after initial temperature regulation to the outside. The first liquid return port 114 is connected to the drain port 22 of the temperature-controlled object, which can recover the medium after heat transfer, so as to realize the recycling of the medium and improve the utilization efficiency of the medium. It can be understood that the temperature-controlled object 20 of the temperature control device 10 can be a mold, and the temperature control device 10 can be applied to mold temperature control. The temperature-controlled object 20 can also be a semiconductor process or a gene sequencing platform.

[0070] The semiconductor temperature control module 200 may include a heat exchange assembly 210 and a control circuit 220. The heat exchange assembly 210 includes a main heat exchange plate and a semiconductor temperature control chip 212 disposed on the outer surface of the main heat exchange plate. The semiconductor temperature control chip 212 is electrically connected to the control circuit 220. For example, the control circuit 220 may be a printed circuit board assembly (PCBA).

[0071] It should be noted that the semiconductor temperature control plate 212 can be provided in a single layer, located on the outer surface of either side of the main heat exchange plate. Alternatively, two layers of the semiconductor temperature control plate 212 can be provided, simultaneously heating or cooling the main heat exchange plate to improve the cooling or heating power. In this case, two layers of the semiconductor temperature control plate 212 can be provided, and the two layers of semiconductor temperature control plate 212 can be respectively provided on the outer surfaces of opposite sides of the main heat exchange plate; no limitation is made here.

[0072] Due to the Peltier effect in semiconductor materials, the semiconductor temperature control plate 212 can be used to achieve thermoelectric cooling or heating. That is, when the semiconductor temperature control plate 212 is energized, the temperature at one end of the semiconductor temperature control plate 212 will decrease while the temperature at the other end will increase. This phenomenon can be used to convert electrical energy into heat energy or cold energy.

[0073] The semiconductor temperature control chip 212 is placed on the outer surface of the main heat exchange plate so that heat or cold can be transferred between the two. Thus, the temperature of the medium can be heated or cooled by means of the heating and cooling functions of the semiconductor temperature control chip 212.

[0074] Furthermore, due to the extremely low thermal inertia and short start-up time of semiconductor thermoelectric coolers, their temperature regulation accuracy during heating and cooling is high. Simultaneously, using semiconductor temperature control also facilitates timely response during cooling or heating processes. It is understandable that semiconductor temperature control eliminates the need for pre-stored media, allowing for flexible placement of temperature measurement points, resulting in a fast system response. Even if the system overheats, the excess overheating medium is easily absorbed by the system; simply reversing the polarity of the semiconductor can achieve cooling.

[0075] Furthermore, temperature regulation using a semiconductor temperature controller 212 eliminates the need for refrigerants or heating agents, making it environmentally friendly. Since it lacks moving mechanical parts, its operation is smooth and noiseless. Moreover, the semiconductor temperature controller 212 has a compact structure, facilitating system integration, and its shape adaptability allows it to be applied in various scenarios.

[0076] It is understandable that the switching between the hot and cold ends of the semiconductor temperature controller 212 can be achieved by adjusting the current direction of the semiconductor temperature controller 212 through the control circuit 220, which is convenient and easy to adjust. Furthermore, the cooling or heating capacity can be adjusted by regulating the current or voltage through the control circuit 220, resulting in a wide range of adjustable power.

[0077] In this way, dynamic temperature control can be achieved by controlling the direction of current or the magnitude of current or voltage in the semiconductor temperature control chip 212 through the control circuit 220. For example, the temperature values ​​of each stage in the mold production process, such as the injection stage, the holding and cooling stage, and the product ejection stage, can be flexibly adjusted. Thus, the semiconductor refrigeration solution can achieve active temperature control. This enables both constant temperature mold injection molding and provides a basis for variable temperature injection molding processes.

[0078] It should be noted that the number of semiconductor temperature control chips 212 can be one or more. When there are multiple semiconductor temperature control chips 212, they can be combined and used in series or parallel to obtain greater cooling or heating power.

[0079] Figure 2 for Figure 1 A schematic diagram of the semiconductor temperature control module in the image. (Combined with...) Figure 1 and Figure 2 As shown, based on this, the main heat exchange plate 211 has a second liquid inlet 2111 and a second liquid supply port 2112. The second liquid inlet 2111 can be connected to the first liquid supply port 113, and the second liquid supply port 2112 is configured to be connected to the liquid inlet 21 of the temperature-controlled object.

[0080] In this way, the medium flowing out of the first liquid supply port 113 after primary temperature regulation can flow into the semiconductor temperature control module 200 for secondary temperature regulation. During this process, fine-grained control of the medium temperature can be achieved. Subsequently, it can flow into the temperature-controlled object 20 through the second liquid supply port 2112 to achieve precise temperature control of the temperature-controlled object 20. Furthermore, the combination of initial adjustment by the primary temperature regulation module 100 and fine adjustment by the semiconductor temperature control module 200 can save temperature regulation time and improve temperature regulation efficiency.

[0081] With the above settings, the heating element 120 can initially heat the medium in the storage unit 110, so that the medium temperature quickly approaches the target value. Then the medium can flow through the first liquid supply port 113 to the second liquid inlet 2111 in the main heat exchange plate 211, so as to realize the flow of the medium into the semiconductor temperature control module 200.

[0082] The medium flowing into the main heat exchange plate 211 can exchange heat with the semiconductor temperature control plate 212 disposed on its outer surface, thereby achieving further fine control of the medium temperature.

[0083] After the target value is reached, the medium can flow out from the second liquid supply port 2112, and the temperature of the temperature-controlled object 20 can be regulated through the liquid inlet 21 of the temperature-controlled object. After the temperature of the temperature-controlled object 20 is regulated, the medium can flow from the liquid outlet 22 of the temperature-controlled object to the first liquid return port 114, and return to the storage unit 110 of the primary temperature control module 100, thereby realizing the recycling of the medium in the primary temperature control module 100, the semiconductor temperature control module 200, and the temperature-controlled object 20.

[0084] Under normal operating conditions, the first liquid inlet 111 and the first liquid outlet 112 are normally closed. Only when the temperature control system 1 needs to cool down as a whole, the first liquid inlet 111 is opened to allow cold water to enter the system, and the first liquid outlet 112 is opened to discharge the hot water from the system. Thus, the temperature control system 1 can cool down as a whole by adding cold water and discharging hot water.

[0085] The following explanations will use the temperature-controlled object 20 as an example of a mold.

[0086] Figure 3 for Figure 1 A schematic diagram of the semiconductor temperature control module from another perspective. Figure 4 for Figure 1 A schematic diagram of the semiconductor temperature control module from another perspective. Figure 5 This is a partial structural exploded view of the semiconductor temperature control module provided in an embodiment of this application.

[0087] Reference Figures 2-5 As shown, the heat exchange assembly 210 may further include an auxiliary heat exchange plate 213. The auxiliary heat exchange plate 213 may be stacked with the main heat exchange plate 211. Furthermore, a semiconductor temperature control plate 212 is disposed between the main heat exchange plate 211 and the auxiliary heat exchange plate 213.

[0088] The auxiliary heat exchange plate 213 has a second return port 2131 and a second outlet port 2132. The second return port 2131 is configured to communicate with the drain port 22 of the temperature-controlled object, and the second outlet port 2132 can communicate with the first return port 114.

[0089] As mentioned earlier, when the semiconductor temperature control plate 212 is energized, the surface temperature of one side of the two surfaces of the semiconductor temperature control plate 212 in the stacking direction will decrease, while the surface temperature of the other side will increase. Therefore, by providing an auxiliary heat exchange plate 213 on the other side of the semiconductor temperature control plate 212 away from the main heat exchange plate 211, efficient recovery and utilization of the heat or cold generated on the other side of the semiconductor temperature control plate 212 can be achieved.

[0090] In this way, after the medium completes the heating or cooling control of the temperature-controlled object 20, the medium flowing out of the drain port 22 of the temperature-controlled object can enter the auxiliary heat exchange plate 213 through the second return port 2131, and after exchanging heat with the semiconductor temperature control plate 212, it flows out from the second outlet port 2132 and into the storage container 110 through the first return port 114. This allows for efficient utilization of the heat or cold generated on the other side of the semiconductor temperature control plate 212, avoiding energy waste.

[0091] For example, when the semiconductor temperature control plate 212 needs to heat the main heat exchange plate 211, the surface of the semiconductor temperature control plate 212 closest to the main heat exchange plate 211 is the high-temperature surface, and the surface of the semiconductor temperature control plate 212 furthest from the main heat exchange plate 211 is the low-temperature surface. At this time, the medium flowing out of the drain port 22 of the temperature-controlled object can enter the auxiliary heat exchange plate 213 through the second return port 2131, and be cooled by the semiconductor temperature control plate 212. After absorbing the cold energy generated by the semiconductor temperature control plate 212, it flows back to the storage device 110 for efficient recycling.

[0092] When the semiconductor temperature control plate 212 needs to cool the main heat exchange plate 211, the surface of the semiconductor temperature control plate 212 closest to the main heat exchange plate 211 is the low-temperature surface, and the surface of the semiconductor temperature control plate 212 furthest from the main heat exchange plate 211 is the high-temperature surface. At this time, the medium flowing out of the drain port 22 of the temperature-controlled object can enter the auxiliary heat exchange plate 213 through the second return port 2131, and be heated by the semiconductor temperature control plate 212. After absorbing the heat generated by the semiconductor temperature control plate 212, it flows back to the storage unit 110 for efficient recycling.

[0093] It should be noted that, Figure 1 The dashed lines between the second liquid inlet 2111 and the second liquid supply 2112, the second liquid return 2131 and the second liquid outlet 2132, the liquid inlet 21 of the temperature control object and the liquid outlet 22 of the temperature control object only indicate their channel connection method and do not represent the actual pipeline and its direction.

[0094] For example, such as Figure 5 As shown, the auxiliary heat exchange plate 213 may include a first auxiliary heat exchange plate 213a and a second auxiliary heat exchange plate 213b. The first auxiliary heat exchange plate 213a and the second auxiliary heat exchange plate 213b may be located on opposite sides in the thickness direction of the main heat exchange plate 211.

[0095] Correspondingly, the semiconductor temperature control plate 212 can be provided with two layers, which are respectively disposed on the outer surfaces of opposite sides of the main heat exchange plate 211.

[0096] by Figure 5Taking the paper-side orientation as an example, when the main heat exchange layer needs to be heated, the upper and lower semiconductor temperature control plates 212 can simultaneously heat the main heat exchange layer, thereby improving temperature control efficiency. Correspondingly, the cold energy on the side of the upper semiconductor temperature control plate 212 away from the main heat exchange layer can be collected by the first auxiliary heat exchange plate 213a. Similarly, the cold energy on the side of the lower semiconductor temperature control plate 212 away from the main heat exchange layer can be collected by the first auxiliary heat exchange plate 213a, thus enabling the recovery and utilization of cold energy.

[0097] It is understood that the first auxiliary heat exchange plate 213a and the second auxiliary heat exchange plate 213b are both provided with a second return port 2131 and a second outlet port 2132, so that the medium in the first auxiliary heat exchange plate 213a and the second auxiliary heat exchange plate 213b can be recovered into the storage unit 110.

[0098] For example, there are multiple semiconductor temperature control plates 212, and each semiconductor temperature control plate 212 can be arranged in an array along the outer surface of the main heat exchange plate 211.

[0099] For example, when the main heat exchange plate 211 is provided with a semiconductor temperature control chip 212 on only one side, the cooling or heating power can be increased by setting multiple semiconductor temperature control chips 212. Furthermore, multiple semiconductors are arranged in an array along the outer surface of the side that is in contact with the main heat exchange plate 211, thereby achieving uniform transfer of heat or cold.

[0100] Or, such as Figure 5 As shown, when semiconductor temperature control plates 212 are provided on both sides of the main heat exchange plate 211, multiple semiconductor temperature control plates 212 can be provided on the upper layer (eight are provided in the figure), and the multiple semiconductor temperature control plates 212 can be arranged in an array along the upper surface of the main heat exchange plate 211. Multiple semiconductor temperature control plates 212 can also be provided on the lower layer, and the multiple semiconductor temperature control plates 212 can be arranged in an array along the lower surface of the main heat exchange plate 211.

[0101] It should be noted that the number of semiconductor temperature control plates 212 can be two, three, four, five, six, eight, etc., which can be determined according to the specific temperature control requirements, and no limit is imposed on the number here. Furthermore, when the semiconductor temperature control plates 212 are provided in two layers, the number of semiconductor temperature control plates 212 in the upper layer and the lower layer can be the same or different.

[0102] In one embodiment, the heat exchange assembly 210 may further include a heat insulation member 214. The heat insulation member 214 may be disposed in the same layer as the semiconductor temperature control plate 212, and the heat insulation member 214 surrounds the outer periphery of the semiconductor temperature control plate 212. This allows the outer surface of the semiconductor temperature control plate 212 to effectively contact the main heat exchange plate 211, effectively utilizes the space in the stacking direction, and also isolates heat transfer.

[0103] When the heat exchange assembly 210 includes an auxiliary heat exchange plate 213, by placing the heat insulation member 214 between the main heat exchange plate 211 and the auxiliary heat exchange plate 213, heat exchange between the main heat exchange plate 211 and the auxiliary heat exchange plate 213 can be avoided, thus preventing contact between them and affecting temperature regulation. Furthermore, the heat insulation member 214 surrounds the outer periphery of the semiconductor temperature control plate 212, allowing the upper and lower surfaces of the semiconductor temperature control plate 212 to contact the main heat exchange plate 211 and the auxiliary heat exchange plate 213 respectively, achieving stable heat transfer.

[0104] For example, the heat insulation component 214 may be provided with receiving holes 2141 corresponding to the number of semiconductor temperature control plates 212, so as to achieve effective contact between the semiconductor temperature control plates 212 and the main heat exchange plate 211 or between the semiconductor temperature control plates 212 and the main heat exchange plate 211 and the auxiliary heat exchange plate 213 through the receiving holes 2141.

[0105] Continue to refer to Figures 2-4 As shown, in some embodiments, the control circuit 220 may include a circuit board 221 and an H-bridge circuit 222. A control chip 2211 may be disposed on the circuit board 221.

[0106] The semiconductor temperature control chip 212 can be connected to the circuit board 221 via the H-bridge circuit 222. In this way, the semiconductor temperature control chip 212 can achieve electrical connection with the circuit board 221 via the H-bridge circuit 222.

[0107] H-bridge circuit 222 can be used to control the voltage polarity and magnitude of semiconductor temperature controller 212, thereby enabling the switching between cooling and heating modes of semiconductor temperature controller 212.

[0108] In one implementation, the H-bridge circuit 222 can control the load by changing the polarity and magnitude of the voltage across the load through controlling the on and off states of the switch 223.

[0109] For example, the circuit board 221 can be disposed on one side of the heat exchange assembly 210 in the thickness direction. This arrangement can save space occupied by the semiconductor temperature control module 200 and facilitate a stable connection between the circuit board 221 and the semiconductor temperature control plate 212.

[0110] When the circuit board 221 and the heat exchange component 210 are stacked, that is, when the circuit board 221 is placed on the upper surface of the heat exchange component 210, the heat exchange component 210 can also provide a certain degree of protection for the circuit board 221 without occupying extra space.

[0111] In some embodiments, the control circuit 220 may further include a power supply 224 and a touch screen assembly 225.

[0112] The power supply 224 provides power output to the semiconductor temperature control module 200. The touchscreen assembly 225 displays medium parameters. For example, the touchscreen assembly 225 can display the current medium temperature, flow rate, and temperature change curve. Temperature can be set and controlled interactively.

[0113] Continue to refer to Figure 1 As shown, the control circuit 220 may further include a control switch 223. The control switch 223 can be configured to send a temperature control signal to the circuit board 221 when the temperature-controlled object 20 is in a state requiring temperature control. By setting the control switch 223, a temperature control signal can be sent to the circuit board 221 in a timely and automatic manner to achieve efficient and timely temperature control. For example, the control switch 223 can be located on the temperature-controlled object 20.

[0114] Taking the mold as an example, the control switch 223 can be a limit switch, a micro switch, or a proximity switch. By setting the control switch 223, when the mold opens and ejects, the front and rear molds move away from each other, and the switch can be triggered to open. This can be regarded as the starting point of the next molding cycle, and a temperature control signal is sent to the circuit board 221 to achieve temperature regulation of the mold.

[0115] This configuration allows for accurate judgment of the mold's temperature control status by controlling whether switch 223 is triggered, thus enabling timely temperature control for the next molding cycle. By sending a signal to circuit board 221 through switch 223 in each production cycle, the production cycle of a single product can be shortened, and product production efficiency can be improved.

[0116] For example, the control circuit 220 can be preset with multi-stage temperature profiles, including a heating profile for the injection stage and a cooling profile for the cooling stage. This enables temperature control in variable mold temperature injection molding processes. Therefore, based on different mold temperature control strategies, mold temperature control corresponding to constant temperature injection molding and variable mold temperature injection molding can be achieved.

[0117] Understandably, as the industry develops, people are demanding that plastic products have thinner walls, more complex structures, more aesthetically pleasing surfaces, and higher strength.

[0118] As the polymer melt flows within the mold cavity, material cooling occurs. Premature cooling leads to the formation of a condensation layer within the mold cavity, hindering melt molding and reducing the melt's filling and transfer capabilities. Premature cooling also results in surface defects such as weld lines, flow marks, depressions, and incomplete filling on the plastic part. This makes it difficult to mold such demanding materials using traditional isothermal injection molding techniques.

[0119] At this point, variable mold temperature injection molding technology is required. This technology heats the mold before injection to achieve a high mold temperature, and then rapidly cools it by lowering the temperature, thus shortening the molding cycle. This improves production efficiency while overcoming the shortcomings of traditional injection molding technology.

[0120] In some embodiments, the temperature of the medium at the liquid inlet 21 of the temperature-controlled object of the mold is collected in real time, and the collected temperature information is sent to the control chip 2211. The control chip 2211 can adjust the output power and output polarity (control heating or cooling) of the semiconductor temperature control chip 212 through analysis and calculation.

[0121] This can offset the fluctuations in mold temperature caused by frequent mold opening and closing, high-temperature rubber filling of the mold cavity, and changes in the ambient temperature around the production equipment, thus achieving constant temperature mold injection and ensuring mold production quality.

[0122] In other embodiments, the mold temperature can also be programmed to be set at each stage of the production process, such as raising the temperature at the initial stage of injection molding and lowering the mold temperature during the cooling stage, thereby achieving variable mold temperature injection molding.

[0123] Figure 6 This is an exploded view of the main heat exchange plate provided in an embodiment of this application. (Refer to...) Figure 6 As shown, the main heat exchange plate 211 may include a base plate 2113 and a cover plate 2114, with the cover plate 2114 covering the base plate 2113.

[0124] The base plate 2113 includes a first inner sidewall and a second inner sidewall disposed opposite to each other. The first flow channel wall 21131 and the second flow channel wall 21132 are alternately disposed therein.

[0125] Furthermore, the first flow channel wall 21131 is connected to the first inner sidewall, and the first flow channel wall 21131 and the second inner sidewall are spaced apart. The second flow channel wall 21132 is connected to the second inner sidewall, and the second flow channel wall 21132 and the first inner sidewall are spaced apart.

[0126] In this way, the alternating arrangement of the first flow channel wall 21131 and the second flow channel wall 21132 can increase the contact area between the main heat exchange plate 211 and the medium, thereby further optimizing the heat exchange effect between the main heat exchange plate 211 and the medium and improving the heat exchange efficiency.

[0127] In some embodiments, the base plate 2113 and the cover plate 2114 can be detachably connected by fasteners 600.

[0128] It is understandable that the auxiliary heat exchange plate 213 can refer to the structural design of the main heat exchange plate 211, which can improve the versatility of the parts and facilitate the interchangeability between the parts.

[0129] Figure 7 This is a schematic diagram illustrating the composition of a temperature control system provided in an embodiment of this application. (Refer to...) Figure 7 As shown in the figure, this application embodiment also provides a temperature control system 1, which includes a temperature control device 10 and a temperature control object 20.

[0130] The liquid inlet of the temperature-controlled object 20 can be connected to the second liquid supply port 2112 of the temperature control device 10, and the liquid outlet 22 of the temperature-controlled object can be connected to the first liquid return port 114 of the temperature control device 10. This allows for the flow and heat transfer of the medium between the temperature-controlled object 20 and the temperature control device 10.

[0131] It is understood that the drain port 22 of the temperature-controlled object can be directly connected to the first return port 114 of the temperature control device 10, or it can be connected to the first return port 114 of the temperature control device 10 through an intermediate structure (such as the aforementioned auxiliary heat exchange plate 213), without any limitation here.

[0132] The temperature control system 1 provided in this application embodiment has the same technical effects as the temperature control module described above, and will not be described in detail here.

[0133] In some embodiments, the temperature control system 1 may further include a temperature sensor, a flow sensor 400, and a water pump 500.

[0134] The temperature sensor may include a first temperature sensor 310, a second temperature sensor 320, and a third temperature sensor 330. The first temperature sensor 310 can be used to detect the temperature of the medium at the second liquid inlet 2111 (initial adjustment temperature). The second temperature sensor 320 can be used to detect the temperature of the medium at the second liquid supply port 2112 (fine adjustment temperature). The third temperature sensor 330 can be used to detect the temperature of the mold.

[0135] The flow sensor 400 is located between the second liquid supply port 2112 and the liquid inlet 21 of the temperature-controlled object. The flow sensor 400 can realize real-time monitoring of the flow rate of the medium within the temperature control system 1.

[0136] The water pump 500 is connected between the second inlet 2111 and the first supply port 113. Furthermore, the water pump 500 provides the power required for the flow of the medium within the temperature control system 1.

[0137] In some embodiments, when the temperature control system 1 needs to achieve constant-temperature mold temperature injection molding, it is necessary to keep the temperature of the medium output from the second liquid supply port 2112 of the semiconductor temperature control module 200 unchanged. At this time, the temperature data can be collected by the second temperature sensor 320 provided at the second liquid supply port 2112 to monitor whether the temperature data is in a constant temperature state.

[0138] Assume that the temperature of the medium to be adjusted needs to be constant at T0 at this time. The temperature data collected at the position of the second temperature sensor 320 is T1. The T1 and T0 data are sent to the control chip 2211 in the circuit board 221 for arithmetic processing. If T1 > T0, it means that the medium entering the temperature control system 1 needs to be cooled. At this time, the cooling surfaces of the semiconductor thermostats all cool down the main heat exchange plate 211, so as to achieve the purpose of reducing the medium temperature.

[0139] If T1 = T0, then the semiconductor thermostats have no further action at this time.

[0140] If T1 < T0, it means that the medium entering the temperature control system 1 needs to be heated. At this time, the heating surfaces of the semiconductor thermostats all heat up the heat exchange plate in 6, so as to achieve the purpose of increasing the medium temperature.

[0141] The switching between heating and cooling can be realized by the H-bridge circuit 222. At this time, the heating and cooling are achieved by reversing the polarities loaded at both ends of the semiconductor material, and it can be realized only by relying on the control circuit 220, which is convenient for system integration.

[0142] In addition, based on the characteristics that one side of the thermoelectric cooler is for heating and the other side is for cooling, the medium between the second liquid return port ***************** and the second liquid outlet 2132 can play a role in taking away the waste heat and waste cold at the other end of the thermoelectric cooler during the working process.

[0143] Through the built-in specific algorithm program, the effect of the fluctuation of its own inlet water temperature can be offset by switching between the cooling and heating working conditions, so as to achieve the constant-temperature output of the controlled water temperature. And through signal acquisition, real-time calculation, the output of the control circuit 220, and feedback adjustment signals, active and precise temperature control can be achieved.

[0144] In some other embodiments, when the temperature control system 1 needs to achieve variable-temperature mold temperature injection molding, it means that it is necessary to keep the temperature data collected by the second temperature sensor 320 as variable temperature. The time and temperature curve of the variable temperature can be set according to the production rhythm.

[0145] Assume that the injection molding cycle of a certain product is 45s in total, divided into 7 stages: mold closing 5s, injection device moving forward 3s, injection filling 5s, pressure holding and pre-plasticizing 18s, injection device retracting 3s, mold opening and ejection 3s, and part removal 8s.

[0146] Variable temperature injection molding ensures that the temperature data collected by the eight outlet temperature sensors is at a high temperature during the entire time of mold closing, injection device forward movement, injection filling, and the first half of the pressure holding and pre-plasticizing time.

[0147] During the latter half of the pressure holding and pre-plasticizing process, the injection unit retracts and enters the cooling stage. Then, during the mold opening, ejection, and part removal stages, the temperature is raised again.

[0148] For example, variable temperature injection molding can be achieved by combining the control switch 223 with the preset multi-stage temperature curve in the control circuit 220.

[0149] By controlling the setting of switch 223, when the mold opens and ejects, the front and rear molds move away from each other and the switch is turned on, which is regarded as the starting point of the next molding cycle. A heating signal is given. After the temperature control system 1 receives the heating signal, it starts the heating of the mold and maintains the high temperature for a total of 33s (3s for mold opening and ejection + 8s for part removal + 5s for mold closing + 3s for injection device to move forward + 5s for injection and mold filling + 18s for pressure holding and pre-plasticizing * 0.5 = 33s).

[0150] Then it enters the cooling stage for a total of 12 seconds (pressure holding and pre-plasticizing 18 seconds * 0.5 + injection device retraction 3 seconds = 12 seconds), until the next heating signal is issued, and so on.

[0151] The switching scheme for heating and cooling is the same as the scheme and technical effect of the constant temperature mold injection mentioned above, and will not be elaborated here.

[0152] By increasing the mold temperature before injection, the fluidity of the melt in the mold cavity can be improved, thereby reducing the internal stress of the product, reducing the warpage of the product, reducing or even eliminating weld lines on the product surface, increasing weld strength, and improving product quality.

[0153] During the cooling and holding pressure stage of injection molding, the mold remains at a high temperature. In the later stage of the holding pressure stage, the mold is rapidly cooled to the ejection temperature to shorten the cooling time of the product and improve production efficiency.

[0154] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0155] Unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the connection within two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0156] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A temperature control device, characterized in that, include: A primary temperature control module includes a storage component and a heating component installed in the storage component. The storage component has a first liquid inlet, a first liquid outlet, a first liquid supply port, and a first liquid return port. The first liquid inlet and the first liquid outlet are configured to communicate with the liquid supply component, and the first liquid return port is configured to communicate with the drain port of the temperature-controlled object. A semiconductor temperature control module includes a heat exchange component and a control circuit. The heat exchange component includes a main heat exchange plate and a semiconductor temperature control chip disposed on the outer surface of the main heat exchange plate. The semiconductor temperature control chip is electrically connected to the control circuit. The main heat exchange plate has a second liquid inlet and a second liquid supply port. The second liquid inlet is connected to the first liquid supply port, and the second liquid supply port is configured to be connected to the liquid inlet of the object being temperature controlled.

2. The temperature control device of claim 1, wherein, The heat exchange assembly also includes: An auxiliary heat exchange plate is stacked with the main heat exchange plate, and a semiconductor temperature control chip is disposed between the main heat exchange plate and the auxiliary heat exchange plate. The auxiliary heat exchange plate has a second return port and a second outlet. The second return port is configured to be connected to the drain port of the temperature-controlled object, and the second outlet is connected to the first return port.

3. The temperature control device of claim 2, wherein, The auxiliary heat exchange plate includes a first auxiliary heat exchange plate and a second auxiliary heat exchange plate, which are located on opposite sides of the thickness direction of the main heat exchange plate.

4. Temperature control device according to any of claims 1-3, characterized in that, The control circuit includes a circuit board and an H-bridge circuit, and the semiconductor temperature control chip is connected to the circuit board through the H-bridge circuit.

5. The temperature control device of claim 4, wherein, The circuit board is disposed on one side of the heat exchange component in the thickness direction.

6. The temperature control device of claim 4, wherein, The control circuit also includes a control switch configured to send a temperature control signal to the circuit board when the object to be controlled is in a state of waiting for temperature control.

7. The temperature control device according to any one of claims 1 to 3, characterized in that The number of semiconductor temperature control plates is multiple, and each semiconductor temperature control plate is arranged in an array along the outer surface of the main heat exchange plate.

8. The temperature control device of claim 7, wherein, The heat exchange assembly also includes: A heat insulation component is provided in the same layer as the semiconductor temperature control sheet, and the heat insulation component surrounds the outer periphery of the semiconductor temperature control sheet.

9. Temperature control device according to any of claims 1-3, characterized in that The main heat exchange plate includes: The base plate includes a first inner sidewall and a second inner sidewall disposed opposite to each other; a first flow channel wall and a second flow channel wall are alternately disposed in sequence within the base plate, the first flow channel wall is connected to the first inner sidewall and there is a gap between the first flow channel wall and the second inner sidewall, and the second flow channel wall is connected to the second inner sidewall and there is a gap between the second flow channel wall and the first inner sidewall; A cover plate, which is placed over the base plate.

10. A temperature control system characterized by, include: The temperature control device according to any one of claims 1-9; The temperature-controlled object has its second liquid supply port of the semiconductor temperature control module in the temperature control device connected to the liquid inlet of the temperature-controlled object, and its drain port connected to the first liquid return port of the primary temperature control module in the temperature control device. The temperature control object is communicated with the first return liquid port of the primary temperature adjustment module through the second return liquid port and the second liquid outlet of the semiconductor temperature control module.

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