A crystal growth ingot furnace for silicon components
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NINGBO SINING SEMICONDUCTOR MATERIALS CO LTD
- Filing Date
- 2025-07-10
- Publication Date
- 2026-08-07
AI Technical Summary
[0002]目前，国内大部分单晶硅材料仍沿用传统直拉法生产，导致成本偏高，尤其是大尺寸单晶硅材料的设备与加工成本居高不下
[0014]与现有技术相比，本实用新型的有益效果是：热场和陶瓷石英坩埚都采用圆形结构，材料利用率相对方形结构，可提升三成以上；相比传统热场和陶瓷石英坩埚方型结构，硅锭的边角不易长晶，容易造成硅锭开裂和应力大，在后续加工过程易碎；陶瓷石英坩埚可以旋转，对流更好，杂质不易富集，可避免传统陶瓷石英坩埚不能旋转，热对流差，杂质易富集，从而在硅锭中出现阴影或杂质点的情况；DSS石墨块和陶瓷石英坩埚可以下降，在长晶后期，陶瓷石英坩埚远离侧部加热器，利于后期晶体生长；上隔热笼和下隔热笼均可以上下移动，更有利于控制温度梯度，增加工艺窗口。
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Figure CN224605136U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of ingot casting furnace technology, specifically relating to a crystal growth ingot casting furnace for silicon components. Background Technology
[0002] Currently, most monocrystalline silicon materials in China are still produced using the traditional Czochralski method, resulting in high costs, especially for large-size monocrystalline silicon materials where equipment and processing costs remain high. For larger silicon components (22 inches and above), polycrystalline products (such as silicon venting rings for etching) are currently mostly produced using casting methods. Using a G5 ingot furnace, the silicon ingots produced are typically 840*840*380mm in length, width, and height. Since the silicon components in the etching machine are all circular, a rounding machine is needed to extract a 22-inch or larger round rod from the square silicon ingot before processing it into the corresponding silicon component material. Utility Model Content
[0003] The purpose of this invention is to provide a crystal growth ingot furnace for silicon components, which aims to solve the problems mentioned in the background art.
[0004] To achieve the above objectives, this utility model provides the following technical solution: A crystal growth ingot casting furnace for silicon components includes a furnace body, an interior of which is a rotating ceramic quartz crucible, an outer surface of which is covered with a protective plate, a heater for heating, a crucible bottom plate, a DSS graphite block at the bottom of the crucible bottom plate, a graphite support rod at the bottom of the DSS graphite block, an upper heat insulation cage that can move up and down inside the furnace body, a lower heat insulation cage that can move up and down at the bottom of the upper heat insulation cage, an exhaust pipe at the top of the upper heat insulation cage, and a graphite cover plate at the top of the ceramic quartz crucible.
[0005] As a preferred embodiment of this utility model, the ceramic quartz crucible adopts a circular structure design.
[0006] In a preferred embodiment of this invention, the protective plate is located between the ceramic quartz crucible and the heater, and the diameter of the graphite cover plate is larger than the outer diameter of the ceramic quartz crucible.
[0007] In a preferred embodiment of this utility model, the upper and lower heat insulation cages form a closed structure, and the ceramic quartz crucible is located inside the closed structure formed by the upper and lower heat insulation cages.
[0008] As a preferred embodiment of this utility model, the bottom of the graphite support rod penetrates through the lower heat insulation cage, and the surface of the lower heat insulation cage is provided with a reserved hole for use with the graphite support rod.
[0009] As a preferred embodiment of this utility model, the top of the graphite cover plate is provided with a circular hole, and the bottom of the exhaust pipe is aligned with the circular hole.
[0010] In a preferred embodiment of this utility model, the top of the exhaust pipe penetrates through the top of the upper insulation cage and extends to the top of the furnace body.
[0011] As a preferred embodiment of this utility model, the bottom of the upper heat insulation cage is provided with a docking groove, and the interior of the docking groove matches the shape of the lower heat insulation cage.
[0012] In a preferred embodiment of this utility model, the top of the heater is fixedly installed on the top of the inner cavity of the upper insulation cage by a number of connecting plates.
[0013] As a preferred embodiment of this utility model, the graphite support rod has a hollow interior and a tapered bottom.
[0014] Compared with existing technologies, the beneficial effects of this invention are as follows: both the hot zone and the ceramic quartz crucible adopt a circular structure, which can improve material utilization by more than 30% compared with the square structure; compared with the traditional square structure of the hot zone and ceramic quartz crucible, the edges and corners of the silicon ingot are not easy to grow crystals, which can easily cause the silicon ingot to crack and have high stress, making it fragile in subsequent processing; the ceramic quartz crucible can rotate, which improves convection and makes it less prone to impurity accumulation, avoiding the situation where the traditional ceramic quartz crucible cannot rotate, has poor thermal convection, and is prone to impurity accumulation, resulting in shadows or impurity spots in the silicon ingot; the DSS graphite block and the ceramic quartz crucible can be lowered, and in the later stage of crystal growth, the ceramic quartz crucible is away from the side heater, which is conducive to the later crystal growth; both the upper and lower heat insulation cages can move up and down, which is more conducive to controlling the temperature gradient and increasing the process window. Attached Figure Description
[0015] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Among them: Figure 1 This is a schematic diagram of the overall structure of this utility model; Figure 2 This is a schematic diagram of the internal structure of the furnace body of this utility model; Figure 3 This is a schematic diagram of the cross-sectional structure of the present invention; Figure 4 This is a schematic diagram of the cross-sectional structure of the upper heat insulation cage of this utility model; Figure 5This is a front view of the cross-section of the upper heat insulation cage of this utility model.
[0016] In the diagram: 1. Furnace body; 2. Exhaust pipe; 3. Upper insulation cage; 4. Graphite cover plate; 5. Ceramic quartz crucible; 6. Protective plate; 7. Heater; 8. Crucible bottom plate; 9. DSS graphite block; 10. Graphite support rod; 11. Lower insulation cage. Detailed Implementation
[0017] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.
[0018] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0019] Secondly, the term "an embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that excludes other embodiments.
[0020] Example Reference Figure 1-5 This embodiment of the present invention provides a crystal growth ingot furnace for silicon components, including a furnace body 1. A rotating ceramic quartz crucible 5 is disposed inside the furnace body 1. A protective plate 6 is disposed on the outer surface of the ceramic quartz crucible 5. A heater 7 for heating is disposed on the outer surface of the ceramic quartz crucible 5. A crucible bottom plate 8 is disposed at the bottom of the ceramic quartz crucible 5. A DSS graphite block 9 is disposed at the bottom of the crucible bottom plate 8. A graphite support rod 10 is disposed at the bottom of the DSS graphite block 9. An upper heat insulation cage 3 that can move up and down is disposed inside the furnace body 1. A lower heat insulation cage 11 that can move up and down is disposed at the bottom of the upper heat insulation cage 3. An exhaust pipe 2 is disposed at the top of the upper heat insulation cage 3. A graphite cover plate 4 is disposed at the top of the ceramic quartz crucible 5.
[0021] Specifically, the ceramic quartz crucible 5 adopts a circular structure design.
[0022] Among them, the hot zone and the ceramic quartz crucible 5 both adopt a circular structure, which can improve the material utilization rate by more than 30% compared with the square structure.
[0023] Furthermore, the protective plate 6 is located between the ceramic quartz crucible 5 and the heater 7, and the diameter of the graphite cover plate 4 is larger than the outer diameter of the ceramic quartz crucible 5.
[0024] Preferably, the upper heat insulation cage 3 and the lower heat insulation cage 11 form a closed structure, and the ceramic quartz crucible 5 is located inside the closed structure formed by the upper heat insulation cage 3 and the lower heat insulation cage 11.
[0025] Furthermore, the bottom of the graphite support rod 10 extends through the lower heat insulation cage 11, and the surface of the lower heat insulation cage 11 is provided with reserved holes for use with the graphite support rod 10.
[0026] Preferably, the top of the graphite cover plate 4 is provided with a round hole, and the bottom of the exhaust pipe 2 is aligned with the round hole.
[0027] Furthermore, the top of the exhaust pipe 2 passes through the top of the upper insulation cage 3 and extends to the top of the furnace body 1.
[0028] Furthermore, the bottom of the upper heat insulation cage 3 is provided with a docking groove, and the inside of the docking groove matches the shape of the lower heat insulation cage 11.
[0029] Specifically, the top of the heater 7 is fixedly installed on the top of the inner cavity of the upper insulation cage 3 by several connecting plates.
[0030] It should be noted that the interior of the graphite support rod 10 is hollow, and the bottom of the graphite support rod 10 is tapered.
[0031] In use, both the hot zone and the ceramic quartz crucible 5 adopt a circular structure, which can improve material utilization by more than 30% compared to the square structure. Compared with the traditional square structure of the hot zone and ceramic quartz crucible 5, the edges and corners of the silicon ingot are not easy to grow crystals, which can easily cause the silicon ingot to crack and have high stress, making it fragile in subsequent processing. The ceramic quartz crucible 5 can rotate, which improves convection and makes it less likely for impurities to accumulate. This avoids the situation where the traditional ceramic quartz crucible 5 cannot rotate, resulting in poor heat convection and easy accumulation of impurities, which can lead to shadows or impurity spots in the silicon ingot. The DSS graphite block 9 and the ceramic quartz crucible 5 can be lowered. In the later stage of crystal growth, the ceramic quartz crucible 5 is away from the side heater 7, which is conducive to the later crystal growth. The upper heat insulation cage 3 and the lower heat insulation cage 11 can both move up and down, which is more conducive to controlling the temperature gradient and increasing the process window.
[0032] It is important to note that the constructions and arrangements of this application shown in several different exemplary embodiments are merely illustrative. Although only a few embodiments are described in detail in this disclosure, those who consult this disclosure will readily understand that many modifications are possible (e.g., changes in the size, dimensions, structure, shape and proportion of various elements, as well as parameter values (e.g., temperature, pressure, etc.), mounting arrangements, use of materials, color, orientation, etc.) without substantially departing from the novel teachings and advantages of the subject matter described in this application). For example, an element shown as integrally formed may be composed of multiple parts or elements, the position of elements may be inverted or otherwise altered, and the nature or number or position of discrete elements may be changed or altered. Therefore, all such modifications are intended to be included within the scope of this utility model. The order or sequence of any process or method steps may be changed or reordered according to alternative embodiments. In the claims, any "device plus function" clause is intended to cover the structure described herein that performs the function, and not only structural equivalents but also equivalent structures. Without departing from the scope of this invention, other substitutions, modifications, alterations, and omissions may be made in the design, operation, and arrangement of the exemplary embodiments. Therefore, this invention is not limited to the specific embodiments, but extends to various modifications that still fall within the scope of the appended claims.
[0033] Furthermore, in order to provide a concise description of exemplary embodiments, not all features of actual embodiments (i.e., those features that are not relevant to the best mode of carrying out the present invention as currently considered, or those features that are not relevant to implementing the present invention) may be omitted.
[0034] It should be understood that numerous specific implementation decisions can be made during the development of any practical implementation, such as in any engineering or design project. Such development efforts may be complex and time-consuming, but for those skilled in the art who benefit from this disclosure, the development effort will be a routine work of design, manufacturing, and production without requiring much experimentation.
[0035] It should be noted that the above embodiments are only used to illustrate the technical solution of this utility model and are not intended to limit it. Although this utility model has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solution of this utility model without departing from the spirit and scope of the technical solution of this utility model, and all such modifications or substitutions should be covered within the scope of the claims of this utility model.
Claims
1. A crystal growth ingot casting furnace for silicon components, comprising a furnace body (1), characterized in that: The furnace body (1) is equipped with a rotating ceramic quartz crucible (5). The outer surface of the ceramic quartz crucible (5) is equipped with a protective plate (6). The outer surface of the ceramic quartz crucible (5) is equipped with a heater (7) for heating. The bottom of the ceramic quartz crucible (5) is equipped with a crucible bottom plate (8). The bottom of the crucible bottom plate (8) is equipped with a DSS graphite block (9). The bottom of the DSS graphite block (9) is equipped with a graphite support rod (10). The furnace body (1) is equipped with an upper heat insulation cage (3) that can move up and down. The bottom of the upper heat insulation cage (3) is equipped with a lower heat insulation cage (11) that can move up and down. The top of the upper heat insulation cage (3) is equipped with an exhaust pipe (2). The top of the ceramic quartz crucible (5) is equipped with a graphite cover plate (4).
2. The crystal growth ingot furnace for silicon components according to claim 1, characterized in that: The ceramic quartz crucible (5) adopts a circular structure design.
3. The crystal growth ingot casting furnace for silicon components according to claim 2, characterized in that: The protective plate (6) is located between the ceramic quartz crucible (5) and the heater (7), and the diameter of the graphite cover plate (4) is larger than the outer diameter of the ceramic quartz crucible (5).
4. The crystal growth ingot casting furnace for silicon components according to claim 3, characterized in that: The upper heat insulation cage (3) and the lower heat insulation cage (11) form a closed structure, and the ceramic quartz crucible (5) is located inside the closed structure formed by the upper heat insulation cage (3) and the lower heat insulation cage (11).
5. The crystal growth ingot casting furnace for silicon components according to claim 4, characterized in that: The bottom of the graphite support rod (10) passes through the lower heat insulation cage (11), and the surface of the lower heat insulation cage (11) is provided with a reserved hole for use with the graphite support rod (10).
6. The crystal growth ingot casting furnace for silicon components according to claim 5, characterized in that: The graphite cover plate (4) has a round hole at the top, and the bottom of the exhaust pipe (2) is aligned with the round hole.
7. The crystal growth ingot furnace for silicon components according to claim 6, characterized in that: The top of the exhaust pipe (2) passes through the top of the upper insulation cage (3) and extends to the top of the furnace body (1).
8. The crystal growth ingot casting furnace for silicon components according to claim 7, characterized in that: The bottom of the upper insulation cage (3) is provided with a docking groove, and the inside of the docking groove matches the shape of the lower insulation cage (11).
9. The crystal growth ingot casting furnace for silicon components according to claim 8, characterized in that: The top of the heater (7) is fixedly installed on the top of the inner cavity of the upper heat insulation cage (3) by several connecting plates.
10. The crystal growth ingot casting furnace for silicon components according to claim 9, characterized in that: The graphite support rod (10) has a hollow interior and a tapered bottom.