Intraocular lens continuous loading device

By designing a continuous feeding device for artificial crystals and utilizing a conveying pipe connector and a liquid level control system, the stability and uniformity of the molten liquid during crystal growth were achieved, solving the problem of continuous feeding in existing technologies and improving crystal quality and production efficiency.

CN224678209UActive Publication Date: 2026-08-25JINAN INST OF QUANTUM TECH
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Patent Information

Application Number
CN202521879157.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-09-02
Publication Date
2026-08-25
Estimated Expiration
2035-09-02

AI Technical Summary

Technical Problem

In existing technologies, continuous feeding cannot be achieved during the growth of artificial crystals, resulting in unstable liquid levels and affecting crystal quality and production efficiency.

Method used

A continuous feeding device for artificial crystals was designed. Through the connecting pipe structure between the melting furnace and the growth furnace, combined with liquid level measurement and controller, dynamic balance of the liquid level in the growth furnace is achieved. The rotating lifting rod is aligned with the flow direction of the mixed liquid. Cooling water channels and gas spray guns are set up to ensure stable delivery of raw materials and uniformity of the melt.

Benefits of technology

This method achieves stability and uniformity of the molten liquid during crystal growth, improves the growth efficiency and quality of large-size, high-quality crystals, and reduces disturbances and defects at the crystal growth interface.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to a kind of artificial crystal continuous feeding device, and artificial crystal continuous feeding device includes melting furnace and growth furnace, the conveying pipe being interconnected melting furnace and growth furnace, controller, and the top of melting furnace is equipped with feed inlet, and feed inlet is equipped with on-off valve;Growth furnace has liquid level measurement structure in, and growth furnace top has rotation arrangement with pull rod, and the inner cavity of growth furnace is circular;Melting furnace's inner cavity and the inner cavity bottom of growth furnace are arranged in parallel plane, conveying pipe is horizontally extended and is connected to the side wall bottom of melting furnace and growth furnace, to make the inside of both form intercommunicator structure, and the extension direction of conveying pipe is tangentially arranged with the outermost profile of the inner cavity of growth furnace to make mixed liquid enter growth furnace along tangent;Controller is connected with the liquid level measurement structure sampling, and is connected with the on-off valve control.The stability of the molten liquid in the pull growth furnace is maintained, and the purpose of industrialized continuous growth high-quality large-size crystal is realized.
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Description

Technical Field

[0001] This utility model relates to the field of artificial crystal preparation, specifically to an artificial crystal continuous feeding device. Background Technology

[0002] Methods for preparing artificial crystals typically include the Czochralski method, hydrothermal method, and vapor deposition method. The Czochralski method is widely used for growing high-quality single crystals, particularly suitable for preparing crystals with high melting points and good mechanical properties, such as lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and silicon single crystals. In existing technologies, the growth furnaces for Czochralski artificial crystal preparation are mostly manually operated. To prepare large-size single crystals, larger crucibles must be used. The raw material is loaded into the crucible all at once before melting, which cannot achieve continuous feeding, thus affecting crystal production efficiency. Furthermore, during crystal growth, the composition of the molten crystal in the furnace usually changes as the crystal preparation progresses; if feeding is not done in time, crystal quality will be affected. In addition, the solid-liquid interface shape is unstable and its position changes during crystal growth, which is detrimental to obtaining high-quality, large-size artificial crystals. Utility Model Content

[0003] The purpose of this invention is to provide a continuous feeding device for artificial crystals, so as to solve the problem that the liquid level is unstable during crystal growth due to the inability to replenish the material during the single feeding process in the prior art.

[0004] To solve the above problems, the continuous artificial lens feeding device involved in this utility model adopts the following technical solution:

[0005] A continuous feeding device for artificial crystals includes a melting furnace and a growth furnace, a conveying pipe connecting the melting furnace and the growth furnace, and a controller, wherein: the top of the melting furnace is provided with a feeding section, and the feeding section is equipped with an on / off valve;

[0006] The growth furnace has a liquid level measuring structure inside, a rotating lifting rod at the top of the growth furnace, and a circular cross-section of the inner cavity of the growth furnace;

[0007] The inner cavities of the melting furnace and the growth furnace are arranged on the same plane at their bottoms. A conveying pipe extends horizontally to the bottom of the side walls of both furnaces, creating a communicating vessel structure with equal liquid levels inside.

[0008] The extension direction of the delivery pipe is tangentially arranged to the outermost contour of the inner cavity of the growth furnace so that the mixed liquid enters the growth furnace tangentially.

[0009] The controller is connected to the liquid level measurement structure for sampling and to the on / off valve control to control the opening and closing of the on / off valve after the liquid level in the growth furnace drops or rises to a set threshold, so as to keep the liquid level in the growth furnace in dynamic balance.

[0010] Furthermore, the rotation direction of the lifting rod is the same as the flow direction of the mixed liquid after it enters the growth furnace.

[0011] Furthermore, the feeding section includes a feeding pipe disposed at the top of the melting furnace, and the outer wall of the feeding pipe is spirally surrounded by cooling water channels.

[0012] Furthermore, the feed pipe includes vertical sections at both ends and an inclined section connecting the two vertical sections, so that the feed pipe is formed into a Z-shaped pipe structure.

[0013] Furthermore, a gas spray gun is provided on the side wall of the feed pipe to introduce inert gas into the feed pipe. The nozzle of the gas spray gun is located above the inclined section, and the spray direction extends obliquely downward toward the upper side wall of the inclined section.

[0014] Furthermore, the liquid level measurement structure includes a laser rangefinder mounted on the top wall of the growth furnace, with the laser emission path of the laser rangefinder perpendicular to the liquid level of the growth furnace.

[0015] Furthermore, both the melting furnace and the growth furnace include a crucible and a material heating structure surrounding the outside of the crucible, and the outside of the conveying pipe is surrounded by a heat-insulating heating structure; the length of the conveying pipe is 1.5-3 times the diameter of the growth furnace.

[0016] Furthermore, the heat preservation and heating structure includes a ceramic tube, a heating layer, a heat preservation layer, and a protective cylinder arranged from the inside to the outside of the conveying pipe, wherein a platinum layer is attached to the inner side of the ceramic tube.

[0017] The beneficial effects of this utility model are as follows: Compared with the prior art, the continuous feeding device for artificial crystals involved in this utility model separates the melting of raw materials from crystal growth. By setting up a melting furnace and a conveying pipe, it realizes the continuous feeding of molten material in the growth furnace, improves the stability of the temperature field in the Czochralski growth furnace, effectively maintains the stability of the molten liquid in the Czochralski growth furnace, and achieves the goal of industrial continuous growth of high-quality large-size crystals.

[0018] Meanwhile, a conveying pipe connected to the bottom of both the growth furnace and the melting furnace ensures consistent liquid levels within their respective chambers. This provides a buffer space for the molten liquid to flow from the melting furnace to the growth furnace, preventing the high temperature of the molten liquid in the melting furnace from affecting the temperature of the growth furnace and improving the stability of the melt at the crystal growth interface. A communicating vessel structure is also incorporated, directing the mixed liquid tangentially into the growth furnace, effectively reducing disturbance to the crystal growth interface caused by the melt feed. The rotating flow field reduces the temperature gradient of the molten liquid, further enhancing the stability of the crystal growth environment. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the embodiments will be briefly described below:

[0020] Figure 1 This is a schematic diagram of a specific embodiment of the continuous feeding device for artificial crystals of this utility model;

[0021] Figure 2 for Figure 1 A magnified view of part A;

[0022] Figure 3 for Figure 1 Cross-sectional view of the connection between the central conveying pipe and the growth furnace.

[0023] Explanation of reference numerals in the attached drawings: 1-Feed hopper; 2-Metering device; 3-Melting furnace; 4-Conveying pipe; 5-Growth furnace; 6-Cooling water channel; 7-Feed pipe; 71-Vertical section; 72-Inclined section; 8-Gas spray gun; 9-Inert gas tank; 10-Heat shield; 11-Exhaust pipe; 12-Crucible one; 13-Shell; 14-Insulation layer; 15-Heating layer; 16-Crucible two; 17-Ceramic tube; 18-Zircon sand; 19-Lifting rod; 20-Seed crystal; 21-Crystal; 22-Laser rangefinder; 23-Sapphire window; 24-Controller; 25-On / off valve. Detailed Implementation

[0024] To make the technical objectives, technical solutions, and beneficial effects of this utility model clearer, the technical solution of this utility model will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0025] Specific embodiments of the continuous feeding device for artificial lenses involved in this utility model are as follows: Figures 1 to 3 As shown, the continuous feeding device includes a melting furnace 3 and a growth furnace 5, which are connected by a horizontally extending conveying pipe 4 to form a communicating vessel structure. The top of the melting furnace 3 is provided with a feeding section with an on / off valve 25. The growth furnace 5 is equipped with a liquid level measuring structure and a rotating lifting rod 19. The conveying pipe 4 is arranged tangentially along the outermost contour of the inner cavity of the growth furnace 5. The controller 24 controls the opening and closing of the on / off valve 25 according to the liquid level data.

[0026] Specifically, the growth furnace 5 has a circular cross-section, the inner cavity of the melting furnace 3 is arranged in the same plane as the bottom of the inner cavity of the growth furnace 5, the extension direction of the conveying pipe 4 is tangential to the outermost contour of the inner cavity of the growth furnace 5 so that the mixed liquid enters the growth furnace 5 tangentially, and the controller 24 controls the on / off valve 25 to open and close after the liquid level in the growth furnace 5 drops and rises to a set threshold so that the liquid level in the growth furnace 5 is kept in dynamic balance.

[0027] The melting furnace 3 and the growth furnace 5 are connected by a bottom-connected conveying pipe 4 to form a communicating vessel structure. Utilizing the principle of hydrostatics, the liquid level on both sides is automatically balanced, and the conveying pipe 4 can be designed as a pipe of equal diameter. The outlet direction of the conveying pipe 4 forms a tangential angle with the circular inner wall of the growth furnace 5, causing the flowing molten liquid to move circumferentially along the furnace wall. Through the controller 24, measuring structure, and on / off valve 25, combined with the communicating vessel principle, the liquid level in the growth furnace 5 is controlled in real time. When the liquid level deviates from the set range, a feeding operation is automatically triggered.

[0028] When the melting furnace 3 receives the raw material, it is heated and melted inside the furnace to form a molten liquid. This molten liquid is continuously supplied to the growth furnace 5 through the horizontal conveying pipe 4, and the two furnaces naturally form equal liquid levels. When the lifting rod 19 raises the crystal 21, causing the liquid level in the growth furnace 5 to drop, the controller 24 activates the on / off valve 25 to replenish the material. The tangential arrangement of the conveying pipe 4 causes the newly flowing molten liquid to rotate along the furnace wall, reducing direct impact on the crystal 21 growth interface. The liquid level measurement structure monitors the liquid level height in real time, and triggers closed-loop control when the change exceeds a threshold. The dual-furnace interconnection structure overcomes the raw material capacity limitation, and the closed-loop control system achieves automated and precise replenishment. The tangential arrangement creates a rotating flow field, improving the uniformity of molten liquid distribution and avoiding interference with the crystal growth interface.

[0029] In some embodiments, the rotation direction of the lifting rod 19 is the same as the flow direction of the mixed liquid after entering the growth furnace 5. Specifically, a lifting device is suspended at the top of the growth furnace 5, which includes a rotatable lifting rod 19. A seed crystal 20 is fixed at the bottom of the lifting rod 19, and the bottom of the lifting rod 19 is suspended downward at the liquid level in the growth furnace 5, using a conventional lifting method to achieve crystal growth. In this embodiment, the rotation direction of the lifting rod 19 is the direction of rotation of the lifting rod 19 within the growth furnace 5, and it is configured to be consistent with the flow direction of the liquid within the growth furnace 5. The flow direction of the mixed liquid after entering the growth furnace 5 is controlled by the tangential arrangement of the aforementioned conveying pipe 4. By aligning the rotation direction of the lifting rod 19 with the flow direction of the molten liquid, the disturbance of the liquid flow to the leaching growth interface can be reduced, avoiding turbulence or local temperature fluctuations caused by directional differences.

[0030] When the molten liquid enters the growth furnace 5, it forms a swirling flow within the furnace. At this time, the rotation direction of the lifting rod 19 is synchronized with the direction of the liquid swirling flow. For example, if the liquid flows clockwise, the lifting rod 19 is also set to rotate clockwise. This synchronization stabilizes the liquid flow around the solid-liquid interface during crystal growth, preventing defects or impurities from accumulating on the crystal surface due to directional conflicts, and maintaining the dynamic balance of the crystal growth interface. In traditional Czochralski methods, the rotation of the lifting rod 19 is independent of the liquid flow direction, causing the crystal growth interface to be disturbed by the shear force of the liquid flow, easily leading to lattice distortion or growth streaks. This synchronization reduces crystal surface defects, improves the uniformity and integrity of the crystal structure, and lowers the risk of crystal growth interruption due to interface fluctuations.

[0031] In some embodiments, to ensure stable feeding, the feeding section includes a feeding pipe 7 located at the top of the melting furnace 3, and the outer wall of the feeding pipe 7 is spirally surrounded by cooling water channels 6. The cooling water channels 6 are mainly used to cool the feeding pipe 7 and the material inside the feeding pipe 7, so as to prevent the material from adhering to the wall of the feeding pipe 7 or even blocking the pipe due to high temperature.

[0032] Specifically, the cooling channel forms a spiral liquid circulation channel around the outer periphery of the tank. The circulating cooling medium removes heat from the pipe body. The spirally arranged cooling channel 6 increases the heat exchange area and forms a continuous cooling zone, effectively controlling the axial temperature distribution of the feed pipe 7. When the material enters the melting furnace 3 through the feed pipe 7, the annular cooling zone formed by the cooling channel 6 reduces the pipe body temperature, ensuring that the surface temperature of the material remains below the crystallization critical point during transport. When heat inside the high-temperature melting furnace 3 is conducted through the pipe wall, the cooling medium forms counter-current heat exchange within the spiral channel. The temperature gradient in different sections of the pipe body is controlled within a preset range, preventing localized crystallization of the raw material on the inner wall of the pipe.

[0033] In some embodiments, the feed pipe 7 includes vertical sections 71 at both ends and an inclined section 72 connecting the two vertical sections 71, so that the feed pipe 7 is formed into a Z-shaped pipe structure. By designing the feed pipe 7 into a Z-shaped structure, the flow direction is changed by the guiding effect of the inclined section 72. By extending the material flow path and increasing the flow resistance, the flow velocity of the material entering the melting furnace 3 is reduced, avoiding violent fluctuations in the melting furnace 3 caused by the impact of the feed, which would cause the molten liquid in the melting furnace 3 to splash. At the same time, the inclined section 72 can also buffer the upward hot air flow caused by the pressure difference between the upper and lower parts of the feed pipe 7. This hot air flow can easily cause the feed pipe 7 to heat up, which may cause some material to melt and adhere to the pipe wall or cause blockage.

[0034] By changing direction twice and extending the path, the kinetic energy of the material is converted into heat energy generated by friction with the pipe wall, thereby reducing the impact of material impact on the liquid surface of the melting furnace 3 and maintaining liquid surface stability. Furthermore, the combination of the Z-shaped pipe structure and the spiral cooling water channel 6 can further control the material temperature, preventing the material from melting or agglomerating prematurely during the feeding process, and ensuring the reliability of the continuous feeding process.

[0035] In some embodiments, a gas spray gun 8 is disposed on the side wall of the feed pipe 7 to introduce inert gas into the feed pipe 7. The nozzle of the gas spray gun 8 is located above the inclined section 72, and the spray direction extends obliquely downward toward the upper side wall of the inclined section 72. The gas spray gun 8 for inert gas is disposed on the upper side wall of the inclined section 72. The inlet end of the gas spray gun 8 is connected to an inert gas tank 9 for injecting inert gas into the feed pipe 7 to isolate oxygen. The spray path of the gas spray gun 8 covers the internal space of the inclined section 72. The inclined form of the spray direction causes the inert gas to flow downward along the pipe wall to form an air curtain, which can form a covering layer on the inner wall of the feed pipe 7, effectively isolating the contact between external air and material. The inert gas can fully fill the pipe cavity space, preventing material from adhering to or oxidizing on the inner wall of the inclined section 72. The pressure gradient generated by the gas flow can assist the material to move downward along the pipe wall, reducing the risk of blockage. It can not only prevent materials from sticking to the wall due to high temperature, but also counteract the upward airflow caused by the air pressure difference between the upper and lower parts of the feed pipe 7, thereby preventing the feed pipe 7 from becoming hot and the hot materials from sticking to the wall due to airflow.

[0036] In some embodiments, the liquid level measurement structure includes a laser rangefinder 22 mounted on the top wall of the growth furnace 5, with the laser emission path of the laser rangefinder 22 perpendicular to the liquid surface of the growth furnace 5. The structure and principle of the laser rangefinder 22 are basically the same as in the prior art and will not be described in detail. Specifically, it can be implemented using a pulsed or phase-type laser ranging module, installed at the furnace shoulder of the growth furnace 5. The vertically arranged laser emission path ensures that the laser beam coincides with the normal direction of the liquid surface, thus avoiding measurement errors caused by liquid surface fluctuations.

[0037] Specifically, a sapphire window 23 is installed at the shoulder of the growth furnace 5. A laser rangefinder is fixed above the sapphire window 23, and a laser beam is directed vertically into the growth furnace 5 to monitor changes in the height of the molten liquid level. It should be noted that the laser rangefinder 22 is equipped with a filter and uses near-infrared to mid-infrared laser light. This is because light in these wavelengths can penetrate high-temperature gas environments well in many situations and is not easily absorbed or scattered. Near-infrared wavelengths include 905 nm, 1064 nm, 1310 nm, and 1550 nm, with the 1550 nm wavelength offering higher eye safety.

[0038] During crystal growth, the laser rangefinder 22 continuously emits a laser beam towards the liquid surface, obtaining real-time liquid level height data by calculating the time difference between emission and reception. When the liquid level changes due to the lifting of crystal 21 or the replenishment of raw materials, the rangefinder feeds the data back to the controller 24. The controller 24 controls the opening and closing of the on / off valve 25 of the feed pipe 7 of the melting furnace 3 according to a preset threshold. Because the laser beam propagates perpendicular to the liquid surface, the influence of liquid surface ripples on measurement accuracy can be effectively eliminated. At the same time, the top mounting method avoids the interference problems of the furnace structure that may exist with side mounting. The use of non-contact laser measurement not only avoids direct contact between the sensor and the high-temperature liquid, but also enables continuous monitoring with millimeter-level accuracy, significantly improving the response speed and reliability of liquid level control. It effectively overcomes the influence of high temperature and liquid flow on detection accuracy, providing a high-precision feedback signal for continuous feeding control, thereby ensuring the stability of the crystal growth interface and improving the crystallization quality and growth efficiency of single crystals.

[0039] In some embodiments, both the melting furnace 3 and the growth furnace 5 include a crucible and a material heating structure surrounding the outside of the crucible, and the outside of the conveying pipe 4 is surrounded by a heat-insulating heating structure; the length of the conveying pipe 4 is 1.5-3 times the diameter of the growth furnace 5.

[0040] The crucible in the melting furnace 3 is crucible 12, and the crucible in the growth furnace 5 is crucible 2 16. The two are basically the same in material and structure. The material heating structure is set on the outside of the crucible. Induction coils or resistance heating wires can be used to maintain the temperature consistency of the molten material through uniform heating.

[0041] Specifically, such as Figure 1 As shown, the melting furnace 3 includes a crucible 12, with a heat shield 10 above it. An exhaust pipe 11 is located on the top of the melting furnace 3 above the crucible 12. From the inside out, the outer side of the crucible 12 is provided with a heating layer 15, a heat insulation layer 14, and a shell 13. The growth furnace 5 includes a crucible 2 16, with a lifting device above it. From the inside out, the outer side of the crucible 2 16 is provided with a heating layer 15, a heat insulation layer 14, and a shell 13. Zirconium sand 18 is filled between the heating layer 15 and the crucible 2 16, with the height of the zirconium sand 18 being 1 / 2 to 2 / 3 of the height of the crucible 2 16. The zirconium sand 18 serves as heat insulation.

[0042] The crucibles in melting furnace 3 and growth furnace 5 are independently temperature-controlled through material heating structures, ensuring a uniform temperature distribution of the molten material before conveying. The insulation and heating structure on the outside of conveying pipe 4, through multi-layer insulation and auxiliary heating, prevents solidification or component segregation of the molten material due to temperature drops during conveying. The ratio of the length of conveying pipe 4 to the diameter of growth furnace 5 is designed to ensure thorough mixing of the molten material before it enters growth furnace 5, while avoiding increased flow resistance due to excessive pipe length. Temperature control throughout the entire process from melting furnace 3 to growth furnace 5, combined with optimized conveying pipe 4 length ratio, balances flow efficiency and mixing effect.

[0043] In some embodiments, the heat-insulating and heating structure includes a ceramic tube 17, a heating layer 15, a heat-insulating layer 14, and a protective cylinder, arranged from the inside to the outside of the conveying pipe 4. The inner side of the ceramic tube 17 is coated with a platinum layer. This platinum layer, a metal layer attached to the inner surface of the ceramic tube 17, can be formed by electroplating or spraying and is used to prevent corrosion caused by direct contact between the molten liquid and the ceramic tube 17. The heating layer 15 is used to maintain the temperature of the material inside the conveying pipe 4. The conveying pipe 4 as a whole provides a temperature buffer zone for crucible 12 and crucible 2 16. Since the set temperature of crucible 12 is higher than that of crucible 2 16, the temperature of the molten material passing through the conveying pipe 4 can be reduced to match the temperature of the molten material inside crucible 2 16, thereby preventing temperature field changes within crucible 2 16 that could lead to a decrease in crystal quality.

[0044] The combination of ceramic tube 17 and platinum layer solves both the high-temperature resistance problem and prevents impurities from interfering with the molten liquid. Simultaneously, layered heating and insulation design ensure uniform and stable temperature in the conveying tube 4. This effectively maintains the flowability of materials within the conveying tube 4, avoids crystal growth defects caused by temperature fluctuations, reduces energy loss, and extends the lifespan of the device.

[0045] In some embodiments, a feed hopper 1 is arranged above the melting furnace 3, such as... Figure 1 As shown, it is located above the melting furnace 3. The feed hopper 1 contains a powdery mixture. The discharge end of the feed hopper 1 is connected to a metering device 2, which is used to accurately measure the material in the feed hopper 1. The discharge end of the metering device 2 is connected to the feed pipe 7 mentioned above. The feed pipe 7 is equipped with an on / off valve 25, which supplies the mixed powder into the melting furnace 3 through the feed hopper 1 and controls the amount of material supplied through the on / off valve 25.

[0046] Pre-sintering after raw material mixing and grinding involves uniformly mixing different raw material powders, pre-grinding them, and then treating them at high temperatures. This reduces the time consumed in the melting stage. After pre-sintering, the materials are added to the melting furnace 3 and the growth furnace 5 respectively. The melt in the melting furnace 3 flows into the growth furnace 5 through the horizontal conveying pipe 4, forming a stable, connected liquid surface. When the lifting rod 19 rotates to drive the crystal 21 to grow, the liquid surface gradually decreases due to the crystal lifting. At this time, the liquid level measuring structure monitors the data in real time. When the liquid level is below the threshold, the controller 24 starts the melting furnace 3 to replenish the material. The replenished melt flows into the growth furnace 5 through the conveying pipe 4, restoring the liquid level to the set range. Conversely, when the liquid level is too high, the replenishment stops, thereby achieving dynamic balance of the liquid surface. In some specific embodiments, the replenishment operation of the melting furnace 3 can be achieved through segmented feeding, for example, the amount of material replenished each time is 0.5%-1% of the volume of the growth furnace 5, to avoid excessive replenishment that would cause drastic fluctuations in the liquid surface. Continuous replenishment is achieved through the connection structure between the melting furnace 3 and the growth furnace 5. Combined with dynamic control of the liquid surface, the uniformity of the melt composition can be maintained, avoiding the generation of crystal defects. Dynamic liquid level control ensures the stability of melt volume during crystal growth, thereby improving crystal yield and growth efficiency.

[0047] Finally, it should be noted that the above embodiments are only for illustration and not for limiting the technical solutions of this utility model. Any equivalent substitutions and modifications or partial substitutions that do not depart from the spirit and scope of this utility model should be covered within the scope of protection of the claims of this utility model.

Claims

1. A continuous feeding device for artificial lenses, characterized in that, Includes a melting furnace and a growth furnace, a conveying pipe connecting the melting furnace and the growth furnace, and a controller, wherein: The top of the melting furnace is equipped with a feeding section, which is equipped with an on / off valve; The growth furnace has a liquid level measuring structure inside, a rotating lifting rod at the top of the growth furnace, and a circular cross-section of the inner cavity of the growth furnace. The inner cavities of the melting furnace and the growth furnace are arranged on the same plane at their bottoms. A conveying pipe extends horizontally to the bottom of the side walls of both furnaces, creating a communicating vessel structure with equal liquid levels inside. The extension direction of the delivery pipe is tangentially arranged to the outermost contour of the inner cavity of the growth furnace so that the mixed liquid enters the growth furnace tangentially. The controller is connected to the liquid level measurement structure for sampling and to the on / off valve control to control the opening and closing of the on / off valve after the liquid level in the growth furnace drops or rises to a set threshold, so as to keep the liquid level in the growth furnace in dynamic balance.

2. The continuous feeding device for artificial lenses according to claim 1, characterized in that, The direction of rotation of the lifting rod is the same as the direction of flow of the mixed liquid after it enters the growth furnace.

3. The continuous feeding device for artificial lenses according to claim 1, characterized in that, The feeding section includes a feeding pipe located at the top of the melting furnace, and the outer wall of the feeding pipe is spirally surrounded by cooling water channels.

4. The continuous feeding device for artificial lenses according to claim 3, characterized in that, The feed pipe includes vertical sections at both ends and an inclined section connecting the two vertical sections, so that the feed pipe is formed into a Z-shaped pipe structure.

5. The continuous feeding device for artificial lenses according to claim 4, characterized in that, A gas spray gun is installed on the side wall of the feed pipe to introduce inert gas into the feed pipe. The nozzle of the gas spray gun is located above the inclined section, and the spray direction extends obliquely downward toward the upper side wall of the inclined section.

6. The continuous feeding device for artificial lenses according to claim 1, characterized in that, The liquid level measurement structure includes a laser rangefinder mounted on the top wall of the growth furnace, with the laser emission path of the laser rangefinder perpendicular to the liquid surface of the growth furnace.

7. The continuous feeding device for artificial lenses according to claim 1, characterized in that, Both the melting furnace and the growth furnace include a crucible and a material heating structure surrounding the outside of the crucible. The outside of the conveying pipe is surrounded by a heat-insulating heating structure. The length of the conveying pipe is 1.5-3 times the diameter of the growth furnace.

8. The continuous feeding device for artificial lenses according to claim 7, characterized in that, The heat preservation and heating structure includes a ceramic tube, a heating layer, a heat preservation layer, and a protective cylinder arranged from the inside to the outside of the conveying pipe, wherein a platinum layer is attached to the inner side of the ceramic tube.