Light-emitting components and methods for manufacturing a light-emitting component

Abstract

Light-emitting component (100), comprising: • a first electrode (104); • an organic electroluminescent layer structure (106) on or above the first electrode (104); • a second translucent electrode (112) on or above the organic electroluminescent layer structure (106); • a mirror layer structure (116) on or above the second electrode (112), wherein the mirror layer structure (116) has a lateral thermal conductivity of at least 1 * 10 -3 exhibits W / K; and • an optically translucent layer structure (114) between the second translucent electrode (112) and the mirror layer structure (116), wherein • the optically translucent layer structure (114) and the mirror layer structure (116) together form a cavity that is optically coupled to a microcavity of the light-emitting component (100).

Description

[0001] The invention relates to light-emitting components and methods for manufacturing a light-emitting component.

[0002] The following publications concern light-emitting devices: US 2005 / 0 285 520 A1, US 6 396 864 B1.

[0003] Large-area organic light-emitting diodes (OLEDs) typically exhibit a significant uneven distribution of temperature and luminance. This uneven distribution results in an unsightly light pattern. Furthermore, brightness and temperature spikes accelerate the aging of individual areas of the OLED's light-emitting surface. A more uniform temperature distribution can improve the homogeneity of the light pattern and extend the lifespan of the OLED.

[0004] Due to microcavity effects, OLEDs exhibit a color shift in the emitted light across the viewing angle. This is undesirable from a product perspective.

[0005] Currently available OLEDs (such as Osram's ORBEOS OLEDs) do not yet include a mechanism for compensating for lateral temperature gradients. Conventional OLED designs may utilize busbars, which primarily ensure a more uniform current distribution and, as a side effect, slightly improve the lateral temperature distribution, though this improvement is insufficient.

[0006] Furthermore, an organic light-emitting diode (OLED) has a component architecture with heat dissipation via radiation consisting of a thermal contact layer, a metal plate and a radiation layer (Cok et al., Journal of the SID 13 / 10, 2005 pages 849 ff).

[0007] To address the issue of color angle distortion in an OLED, approaches have so far included applying diffusing films or foils, optimizing the layer sequence of the OLED, and increasing the optical transparency of the base contact.

[0008] Furthermore, in the case of an organic light-emitting diode, it is known to provide a combination of a semi-transparent top contact and a mirror applied to the back (also referred to as a remote cavity) to reduce the color angle distortion (Proc Int Disp Workshops - Vol 11, “White Multi-Photon Emission OLED without optical interference”, pages 1293 to 1296 (2004)).

[0009] A light-emitting device is provided. The light-emitting device comprises a first electrode; an organic electroluminescent layer structure on or above the first electrode; a second electrode on or above the organic electroluminescent layer structure; and a mirror layer structure on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 × 10⁻⁶. -3 W / K exhibits an optically translucent layer structure arranged between the second electrode and the mirror layer structure.

[0010] In various embodiments, the lateral thermal conductivity of a layer is understood to be the product of the specific thermal conductivity of the layer material and the layer thickness. If the mirror layer structure consists of several layers, the lateral thermal conductivity is, in various embodiments, the sum of the individual lateral thermal conductivities.

[0011] In one embodiment, the light-emitting component can further comprise an optically translucent layer structure on or above the second electrode. The mirror layer structure can be arranged on or above the optically translucent layer structure.

[0012] The terms "translucent" and "translucent layer" can be understood in various ways to mean that a layer is permeable to light, for example, to the light generated by the light-emitting component, for example, to one or more wavelength ranges, such as light in a wavelength range of visible light (for example, at least in a subrange of the wavelength range from 380 nm to 780 nm). For example, the term "translucent layer" can also mean that essentially all the light coupled into a structure (for example, a layer) is coupled out of the structure (for example, layer), whereby some of the light may be scattered.

[0013] The term "transparent" or "transparent layer" can be understood in various embodiments to mean that a layer is permeable to light (for example, at least in a sub-range of the wavelength range from 380 nm to 780 nm), whereby light coupled into a structure (for example, a layer) is also coupled out of the structure (for example, layer) essentially without scattering or light conversion. Thus, "transparent" can be considered a special case of "translucent" in various embodiments.

[0014] In the event that, for example, a light-emitting monochrome or emission-spectrum-limited electronic component is to be provided, it is sufficient that the optically translucent layer structure is translucent at least in a sub-range of the wavelength range of the desired monochrome light or for the limited emission spectrum.

[0015] In one embodiment, the second electrode can be arranged such that the optically translucent layer structure is optically coupled to the organic electroluminescent layer structure.

[0016] In various embodiments, for example, only the respective electrode (e.g., the first electrode and / or the second electrode, for example, the cathode) is provided as a semi-transparent electrode.

[0017] Although the concept of a "remote cavity" is known in itself, various embodiments illustrate a mirror layer structure with a sufficiently high lateral thermal conductivity to improve heat distribution in a light-emitting device, such as an OLED. In several embodiments, compared to the prior art, the optical function of the translucent layer and mirror layer structure is combined with the advantages of lateral heat distribution in a single layer structure.

[0018] An additional light-emitting component is provided. This component has a mirror-layer structure with a lateral thermal conductivity of at least 1 × 10⁻⁶. -3W / K has; an organic electroluminescent layer structure on or above the mirror layer structure; and an electrode on or above the organic electroluminescent layer structure.

[0019] In one embodiment, the mirror layer structure can form a first electrode; and the electrode can form a second electrode.

[0020] In yet another embodiment, the light-emitting component can further comprise a first electrode arranged on or above the mirror layer structure. This electrode can form a second electrode.

[0021] The light-emitting component has a first optically translucent layer structure between the mirror layer structure and the first electrode.

[0022] The first optically translucent layer structure may contain light-scattering particles.

[0023] In yet another embodiment, the light-emitting component can further have an encapsulation layer structure on or above the second electrode.

[0024] In yet another embodiment, the light-emitting component can further have a second optically translucent layer structure on or above the second electrode.

[0025] The second optically translucent layer structure may contain light-scattering particles.

[0026] In another embodiment, the mirror layer structure can have a layer thickness of at least 1 µm.

[0027] In various embodiments, a method for fabricating a light-emitting device is provided. The method can include forming a first electrode; forming an organic electroluminescent layer structure on or above the first electrode; forming a second electrode on or above the organic electroluminescent layer structure; and forming a mirror layer structure on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 × 10⁻⁶. -3 exhibits W / K.

[0028] In one embodiment, the method can further include the formation of an optically translucent layer structure on or above the second electrode. The mirror layer structure can be formed on or above the optically translucent layer structure.

[0029] In various embodiments, a method for manufacturing a light-emitting component is provided. The method can include the formation of a mirror layer structure that has a lateral thermal conductivity of at least 1 × 10⁻⁶. -3 W / K exhibits; the formation of an organic electroluminescent layer structure on or above the mirror layer structure; and the formation of an electrode on or above the organic electroluminescent layer structure.

[0030] In one embodiment, the mirror layer structure can form a first electrode and the electrode can form a second electrode.

[0031] In yet another embodiment, the method can further include the formation of a first electrode that is arranged on or above the mirror layer structure. This electrode can form a second electrode.

[0032] In yet another embodiment, the method can further include the formation of a first optically translucent layer structure between the mirror layer structure and the first electrode.

[0033] In yet another embodiment, the first optically translucent layer structure can contain light-scattering particles, or the first optically translucent layer structure can be formed by these particles.

[0034] In yet another embodiment, the method can further include the formation of an encapsulation layer structure on or above the second electrode.

[0035] In yet another embodiment, the method can further include the formation of a second optically translucent layer structure on or above the second electrode.

[0036] In yet another embodiment, light-scattering particles can be contained or formed in the second optically translucent layer structure.

[0037] In another embodiment, the mirror layer structure can be formed with a layer thickness of at least 1 µm.

[0038] In yet another embodiment, the light-emitting component can be configured as an organic light-emitting diode or as an organic light-emitting transistor.

[0039] In particular, light-emitting components and methods are described according to at least one of the following aspects: 1. Light-emitting component comprising: • a first electrode; • an organic electroluminescent layer structure on or above the first electrode; • a second translucent electrode on or above the organic electroluminescent layer structure; and • a mirror layer structure on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 * 10 -3exhibits W / K. 2. Light-emitting component according to aspect 1, further comprising: an optically translucent layer structure between the second translucent electrode and the mirror layer structure. 3. Light-emitting component according to aspect 1 or 2, • wherein the mirror layer structure forms the second electrode; and • where the electrode forms the first electrode. 4. Light-emitting component comprising: • a mirror layer structure that has a lateral thermal conductivity of at least 1 * 10 -3 W / K exhibits; • a first translucent electrode; • an organic electroluminescent layer structure on or above the mirror layer structure; and • a second electrode on or above the organic electroluminescent layer structure. 5. Light-emitting component according to aspect 4, further comprising: an optically translucent layer structure between the mirror layer structure and the first translucent electrode. 6. Light-emitting component according to one of aspects 3 to 5, • wherein the mirror layer structure forms a first electrode; and • where the electrode forms a second electrode. 7. Light-emitting component according to one of aspects 1 to 6, wherein the optically translucent layer structures have scattering particles. 8. Light-emitting component according to one of aspects 1 to 7, further comprising: an encapsulation layer structure on or above the second electrode and / or below the first electrode. 9. Light-emitting component according to one of aspects 1 to 8, further comprising: a second optically translucent layer structure on or above the second electrode. 10. Light-emitting component according to aspect 9, wherein the second optically translucent layer structure has light-scattering particles. 11. Light-emitting component according to one of aspects 1 to 10, wherein the mirror layer structure has a layer thickness of at least 1 µm. 12. Method for manufacturing a light-emitting component, comprising the method: • Formation of a first electrode; • Formation of an organic electroluminescent layer structure on or above the first electrode; • Forming a second translucent electrode on or above the organic electroluminescent layer structure; and • Forming (508) a mirror layer structure on or above the second electrode, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 * 10 -3 exhibits W / K. 13. Procedure according to aspect 12, further showing: • Forming an optically translucent layer structure on or above the second translucent electrode; • wherein the mirror layer structure is formed on or above the optically translucent layer structure. 14. Method for manufacturing a light-emitting component, comprising the method: • Forming a mirror layer structure that has a lateral thermal conductivity of at least 1 * 10 -3 W / K exhibits; • Formation of a translucent electrode; • Forming an organic electroluminescent layer structure on or above the mirror layer structure; and • Forming an electrode on or above the organic electroluminescent layer structure. 15. Procedure according to aspect 14, further showing: • Forming an optically translucent layer structure on or above the mirror layer structure; • wherein the first electrode is formed on or above the optically translucent layer structure.

[0040] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0041] They show Fig. 1 a cross-sectional view of a light-emitting component according to various embodiments; Fig. 2 a cross-sectional view of a light-emitting component according to various embodiments; Fig. 3 a cross-sectional view of a light-emitting component according to various examples; Fig. 4A to 4F a light-emitting component according to various embodiments at different times during its manufacture; Fig. 5 a flowchart illustrating a method for manufacturing a light-emitting component according to various embodiments; and Fig. 6 a flowchart illustrating a method for manufacturing a light-emitting component according to various embodiments.

[0042] The following detailed description refers to the accompanying drawings, which form part thereof and in which specific embodiments of the invention are shown for illustrative purposes. In this respect, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves for illustrative purposes. It is understood that the features of the various exemplary embodiments described herein can be combined with one another unless specifically stated otherwise.

[0043] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0044] A light-emitting device can be designed in various embodiments as an organic light-emitting diode (OLED) or as an organic light-emitting transistor. The light-emitting device can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting devices can be provided, for example, housed in a common package.

[0045] In various embodiments, a back mirror is used to illustrate the (lateral) heat distribution of a light-emitting component, for example an organic light-emitting diode (OLED).

[0046] Fig. Figure 1 shows an organic light-emitting diode 100 as an implementation of a light-emitting device according to various embodiments.

[0047] The light-emitting component 100, in the form of an organic light-emitting diode 100, can comprise a substrate 102. The substrate 102 can, for example, serve as a support element for electronic elements or layers, such as light-emitting elements. For example, the substrate 102 can comprise or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Furthermore, the substrate 102 can comprise or be formed from a plastic film or a laminate containing one or more plastic films. The plastic can comprise or be formed from one or more polyolefins (for example, high-density or low-density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic can comprise or be formed from polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES), and / or polyethylene naphthalate (PEN).Furthermore, substrate 102 can, for example, comprise a metal foil, such as aluminum foil, stainless steel foil, copper foil, or a combination or stack of these materials. Substrate 102 can comprise one or more of the aforementioned materials. Substrate 102 can be translucent.

[0048] In various embodiments, the organic light-emitting diode (OLED) can be configured as a so-called top emitter and / or a so-called bottom emitter. A top emitter, in various embodiments, can be understood as an OLED in which the light is emitted upwards from the OLED, for example, through the second electrode. A bottom emitter, in various embodiments, can be understood as an OLED in which the light is emitted downwards from the OLED, for example, through the substrate and the first electrode.

[0049] A first electrode 104 (for example, in the form of a first electrode layer 104) can be applied to or above the substrate 102. The first electrode 104 (hereinafter also referred to as the lower electrode 104) can be made of an electrically conductive material, such as a metal or a transparent conductive oxide (TCO), or a stack of several layers of the same or different metal(s) and / or the same or different TCOs. Transparent conductive oxides are transparent conductive materials, for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). Besides binary metal-oxygen compounds, such as ZnO, SnO2, or In2O3, ternary metal-oxygen compounds also belong, such as AlZnO, Zn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5 or In4Sn3O. 12or mixtures of different transparent conductive oxides belong to the group of TCOs. Furthermore, TCOs do not necessarily have a stoichiometric composition and can also be p-doped or n-doped.

[0050] In various embodiments, the first electrode 104 can comprise a metal; for example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, as well as compounds, combinations or alloys of these materials.

[0051] In various embodiments, the first electrode 104 can be formed from a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

[0052] In various embodiments, the first electrode can provide one or more of the following materials as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, for example made of Ag; networks of carbon nanotubes; graphene particles and layers; networks of semiconducting nanowires.

[0053] Furthermore, these electrodes can contain conductive polymers or transition metal oxides or conductive transparent oxides.

[0054] If the light-emitting component 100 emits light through the substrate, the first electrode 104 and the substrate 102 can be translucent or transparent. In this case, if the first electrode 104 is made of a metal, it can, for example, have a thickness of less than or equal to approximately 25 nm, less than or equal to approximately 20 nm, or less than or equal to approximately 18 nm. Furthermore, the first electrode 104 can, for example, have a thickness greater than or equal to approximately 10 nm or greater than or equal to approximately 15 nm.In various embodiments, the first electrode 104 can have a layer thickness in a range of approximately 10 nm to approximately 25 nm, for example a layer thickness in a range of approximately 10 nm to approximately 18 nm, for example a layer thickness in a range of approximately 15 nm to approximately 18 nm.

[0055] Furthermore, in the case of a translucent or transparent first electrode 104 and in the case that the first electrode 104 is formed from a conductive transparent oxide (TCO), the first electrode 104 can, for example, have a layer thickness in a range of approximately 50 nm to approximately 500 nm, for example, a layer thickness in a range of approximately 75 nm to approximately 250 nm, for example, a layer thickness in a range of approximately 100 nm to approximately 150 nm.

[0056] Furthermore, in the case of a translucent or transparent first electrode 104 and in the case that the first electrode 104 is formed from, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or of graphene layers and composites, the first electrode 104 may, for example, have a layer thickness in a range of approximately 1 nm to approximately 500 nm, for example, a layer thickness in a range of approximately 10 nm to approximately 400 nm, for example, a layer thickness in a range of approximately 40 nm to approximately 250 nm.

[0057] If the light-emitting component 100 emits light exclusively upwards, the first electrode 104 can also be opaque or reflective. In this case, the first electrode 104 can, for example, have a layer thickness of approximately 40 nm or greater, or approximately 50 nm or greater.

[0058] The first electrode 104 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.

[0059] The first electrode 104 can have a first electrical connection to which a first electrical potential (provided by an energy source (not shown) – for example, a current source or a voltage source) can be applied. Alternatively, the first electrical potential can be applied to the substrate 102 and then indirectly supplied to the first electrode 104. The first electrical potential can be, for example, the ground potential or another predefined reference potential.

[0060] Furthermore, the light-emitting component 100 can have an organic electroluminescent layer structure 106 which is or is applied on or above the first electrode 104.

[0061] The organic electroluminescent layer structure 106 can contain one or more emitter layers 108, for example with fluorescent and / or phosphorescent emitters, as well as one or more hole conduction layers 110.

[0062] In various embodiments, electron conduction layers (not shown) can be provided as an alternative or additional element.

[0063] Examples of emitter materials that can be used in the light-emitting device 100 according to various embodiments for the emitter layer(s) 108 include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene, and polyphenylene (e.g., 2- or 2,5-substituted poly-p-phenylenevinylene), as well as metal complexes, for example, iridium complexes such as blue-phosphorescent FIrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III), green-phosphorescent Ir(ppy)3 (tris(2-phenylpyridine)iridium III), red-phosphorescent Ru(dtb-bpy)3*2(PF6) (tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex), and blue-fluorescent DPAVBi (4,4-Bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-Bis[N,N-di-(p-tolyl)-amino]anthracene) and red fluorescent DCM2 (4-Dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4H-pyran) as non-polymeric emitters.Such non-polymer emitters can be separated, for example, by thermal evaporation. Furthermore, polymer emitters can be used, which can be separated particularly by wet chemical processes, such as spin coating.

[0064] The emitter materials can be embedded in a suitable manner within a matrix material.

[0065] It should be noted that other suitable emitter materials are also provided for in other embodiments.

[0066] The emitter materials of the emitter layer(s) 108 of the light-emitting device 100 can, for example, be selected such that the light-emitting device 100 emits white light. The emitter layer(s) 108 can / can have several differently colored emitter materials (for example, blue and yellow or blue, green, and red). Alternatively, the emitter layer(s) 108 can / can also be composed of several sublayers, such as a blue fluorescent emitter layer 108 or a blue phosphorescent emitter layer 108, a green phosphorescent emitter layer 108, and a red phosphorescent emitter layer 108. By mixing the different colors, the emission of light can result in a white color impression.Alternatively, it may be possible to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that a white color impression results from a (not yet white) primary radiation through the combination of primary radiation and secondary radiation.

[0067] The organic electroluminescent layer structure 106 can generally comprise one or more electroluminescent layers. These one or more electroluminescent layers can be organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules, or a combination of these materials. For example, the organic electroluminescent layer structure 106 can have one or more electroluminescent layers configured as hole transport layers 110, thus enabling, for example in the case of an OLED, effective hole injection into an electroluminescent layer or region.Alternatively, in various embodiments, the organic electroluminescent layer structure can have one or more functional layers configured as electron transport layers, thus enabling, for example, in the case of an OLED, effective electron injection into an electroluminescent layer or region. Materials such as tertiary amines, carbazo derivatives, conductive polyaniline, or polyethylene dioxythiophene can be used for the hole transport layer 110. In various embodiments, the one or more electroluminescent layers can be configured as electroluminescent layers.

[0068] In various embodiments, the hole transport layer 110 can be applied, for example deposited, on or above the first electrode 104, and the emitter layer 108 can be applied, for example deposited, on or above the hole transport layer 110.

[0069] In various embodiments, the organic electroluminescent layer structure 106 (i.e., for example, the sum of the thicknesses of hole transport layer(s) 110 and emitter layer(s) 108) can have a layer thickness of at most approximately 1.5 µm, for example, a layer thickness of at most approximately 1.2 µm, for example, a layer thickness of at most approximately 1 µm, for example, a layer thickness of at most approximately 800 nm, for example, a layer thickness of at most approximately 500 nm, for example, a layer thickness of at most approximately 400 nm, for example, a layer thickness of at most approximately 300 nm.In various embodiments, the organic electroluminescent layer structure 106 can, for example, comprise a stack of several organic light-emitting diodes (OLEDs) arranged directly on top of each other, wherein each OLED can, for example, have a layer thickness of at most approximately 1.5 µm, for example, a layer thickness of at most approximately 1.2 µm, for example, a layer thickness of at most approximately 1 µm, for example, a layer thickness of at most approximately 800 nm, for example, a layer thickness of at most approximately 500 nm, for example, a layer thickness of at most approximately 400 nm, for example, a layer thickness of at most approximately 300 nm.In various embodiments, the organic electroluminescent layer structure 106 can, for example, have a stack of three or four OLEDs arranged directly on top of each other, in which case, for example, the organic electroluminescent layer structure 106 can have a layer thickness of approximately 3 µm at most.

[0070] The light-emitting component 100 can optionally have further organic functional layers, for example arranged on or above one or more emitter layers 108, which serve to further improve the functionality and thus the efficiency of the light-emitting component 100.

[0071] A second electrode 112 (for example in the form of a second electrode layer 112) can be applied on or above the organic electroluminescent layer structure 106 or optionally on or above one or more further organic functional layers.

[0072] In various embodiments, the second electrode 112 can have the same materials or be formed from the same materials as the first electrode 104, with metals being particularly suitable in various embodiments.

[0073] In various embodiments, the second electrode 112 can, for example, have a layer thickness of less than or equal to approximately 50 nm, for example, a layer thickness of less than or equal to approximately 45 nm, for example, a layer thickness of less than or equal to approximately 40 nm, for example, a layer thickness of less than or equal to approximately 35 nm, for example, a layer thickness of less than or equal to approximately 30 nm, for example, a layer thickness of less than or equal to approximately 25 nm, for example, a layer thickness of less than or equal to approximately 20 nm, for example, a layer thickness of less than or equal to approximately 15 nm, for example, a layer thickness of less than or equal to approximately 10 nm.

[0074] The second electrode 112 can generally be designed in a similar way to the first electrode 104, or differently from it. The second electrode 112 can be made of one or more of the materials and with the respective layer thickness (depending on whether the second electrode is to be reflective, translucent, or transparent) as described above in connection with the first electrode 104.

[0075] At these layer thicknesses, the additional cavity, which will be explained in more detail below, is optically coupled to the microcavity(ies) formed by the one or more electroluminescent layer structures.

[0076] The second electrode 112 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.

[0077] The second electrode 112 can have a second electrical connection to which a second electrical potential (different from the first electrical potential), provided by the energy source, can be applied. The second electrical potential can, for example, have a value such that the difference to the first electrical potential is in the range of approximately 1.5 V to approximately 20 V, for example, a value in the range of approximately 2.5 V to approximately 15 V, for example, a value in the range of approximately 5 V to approximately 10 V.

[0078] An optically translucent layer structure 114 can be provided on or above the second electrode 112. The optically translucent layer structure 114 can optionally include additional light-scattering particles.

[0079] The optically translucent layer structure 114 can in principle be made of or be made of any material, for example a dielectric material, for example an organic material, which for example forms an organic matrix.

[0080] In various embodiments, the optically translucent layer structure 114 is translucent, for example transparent, to radiation at least in a sub-range of the wavelength range from 380 nm to 780 nm.

[0081] In various embodiments, a mirror layer structure 116 is applied on or above the optically translucent layer structure 114. The optically translucent layer structure 114 and the mirror layer structure 116 together form, figuratively speaking, an optically coupled (i.e., external) cavity, for example a microcavity, to the microcavity of the light-emitting component 100, for example the OLED, containing, for example, an optically active medium or a plurality of optically active media.

[0082] In various embodiments, the mirror layer structure 116 has a layer thickness of at least 1 µm. Furthermore, the mirror layer structure 116 can have a lateral thermal conductivity of at least 1 * 10 -3 exhibit W / K.

[0083] In this embodiment, for example, the optically translucent layer structure 114 of the "external" cavity is brought into contact with the translucent (transparent or semi-transparent) second electrode 112 of the OLED microcavity. The "external" cavity does not participate, or only to a very small extent, in the current transport through the OLED; in other words, no or only a negligible electric current flows through the "external" cavity and thus through the optically translucent layer structure 114 and the mirror layer structure 116.

[0084] As already explained above, the "external" cavity, and in particular the optically translucent layer structure 114, can be "filled" with or formed from a suitable organic matrix in various embodiments. The "external" cavity can have two mirrors or mirror layer structures 116, at least one of which is translucent, transparent, or semitransparent.The translucent, transparent or semi-transparent mirror (or the translucent, transparent or semi-transparent mirror layer structure) can be identical to the translucent, transparent or semi-transparent second electrode 112 of the OLED microcavity (these embodiments are shown in the figures; however, in alternative embodiments, an additional translucent, transparent or semi-transparent mirror layer structure can be provided between the second electrode 112 and the optically translucent layer structure 114).

[0085] In various embodiments, the organic matrix can be made of low-molecular-weight organic compounds ("small molecules"), which can be applied, for example, by evaporation in a vacuum, such as alpha-NPD or 1-TNATA. In alternative embodiments, the organic matrix can be formed from or consist of polymeric materials, such as optically transparent polymeric materials (epoxides, polymethyl methacrylate, PMMA, EVA, polyesters, polyurethanes, or the like), which can be applied using a wet chemical process (e.g., spin coating or printing). These materials can also contain additives to adjust the refractive index.In various embodiments, for example, any organic material can be used for the organic matrix, as can also be used in the organic electroluminescent layer structure 106. Furthermore, in alternative embodiments, the optically translucent layer structure 114 can have or be formed from an inorganic semiconductor material, for example SiN, SiO2, GaN, etc., which can be deposited, for example, by means of a low-temperature deposition process (for example, from the gas phase) (i.e., for example, at a temperature of less than or equal to approximately 100 °C).In various embodiments, the refractive indices of the OLED functional layers 106, 108, 110 and the optically translucent layer structure 114 can be matched to each other as closely as possible, with the optically translucent layer structure 114 also having high refractive indices, for example polyimides with a refractive index of up to n = 1.7, or polyurethane with a refractive index of up to n = 1.74.

[0086] In various embodiments, additives can be incorporated into the polymers. A high-refractive-index polymer matrix can thus be achieved, for example, by mixing suitable additives into a normal-refractive-index polymer matrix. Suitable additives include, for example, titanium oxide or zirconium oxide nanoparticles, or compounds containing titanium oxide or zirconium oxide.

[0087] In various embodiments, an electrically insulating layer, for example SiN, can be applied or be applied between the second translucent electrode 112 and the optically translucent layer structure 114, for example with a layer thickness in a range of approximately 30 nm to approximately 1.5 µm, for example with a layer thickness in a range of approximately 200 nm to approximately 1 µm, in order to protect electrically unstable materials, for example during a wet chemical process.

[0088] In various embodiments, a barrier thin film / thin film encapsulation can optionally be formed.

[0089] For the purposes of this application, a "barrier thin film" can be understood to mean, for example, a layer or layer structure suitable for forming a barrier against chemical impurities or atmospheric substances, in particular against water (moisture) and oxygen. In other words, the barrier thin film is designed such that it cannot be penetrated by substances that damage OLEDs, such as water, oxygen, or solvents, or only to a very limited extent. Suitable embodiments of the barrier thin film can be found, for example, in patent applications DE 10 2009 014 543, DE 10 2008 031 405, DE 10 2008 048 472, and DE 2008 019 900.

[0090] According to one embodiment, the barrier thin film can be formed as a single layer (in other words, as a single layer). According to an alternative embodiment, the barrier thin film can have a plurality of sublayers formed on top of each other. In other words, according to one embodiment, the barrier thin film can be formed as a stack of layers. The barrier thin film or one or more sublayers of the barrier thin film can be formed, for example, by a suitable deposition process, e.g., by atomic layer deposition (ALD) according to one embodiment, e.g.a plasma-enhanced atomic layer deposition (PEALD) process or a plasma-less atomic layer deposition (PLALD) process, or by means of a chemical vapor deposition (CVD) process according to another embodiment, e.g. a plasma-enhanced chemical vapor deposition (PECVD) process or a plasma-less chemical vapor deposition (PLCVD) process, or alternatively by means of other suitable deposition processes.

[0091] Very thin films can be deposited using an atomic layer deposition (ALD) process. In particular, films with thicknesses in the atomic layer range can be deposited.

[0092] According to one embodiment, in a barrier thin film comprising multiple sublayers, all sublayers can be formed using an atomic layer deposition (ALD) process. A layer sequence consisting solely of ALD layers can also be referred to as a "nanolaminate".

[0093] According to an alternative embodiment, in the case of a barrier thin film having several sublayers, one or more sublayers of the barrier thin film can be deposited using a deposition method other than an atomic layer deposition method, for example using a gas phase deposition method.

[0094] According to one embodiment, the barrier thin film can have a layer thickness of approximately 0.1 nm (one atomic layer) to approximately 1000 nm, for example a layer thickness of approximately 10 nm to approximately 100 nm according to one embodiment, for example approximately 40 nm according to one embodiment.

[0095] In one embodiment, the barrier thin film comprises several sublayers, all sublayers can have the same thickness. In another embodiment, the individual sublayers of the barrier thin film can have different thicknesses. In other words, at least one of the sublayers can have a different thickness than one or more of the other sublayers.

[0096] The barrier thin film or its individual sub-layers can be configured as a translucent or transparent layer, depending on the embodiment. In other words, the barrier thin film (or its individual sub-layers) can consist of a translucent or transparent material (or a combination of materials that is translucent or transparent).

[0097] According to one embodiment, the barrier thin film or (in the case of a stack of layers with a plurality of sub-layers) one or more of the sub-layers of the barrier thin film may comprise or consist of one of the following materials: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, as well as mixtures and alloys thereof.

[0098] In various embodiments, the optically translucent layer structure 114 can have a layer thickness in a range of approximately 10 nm to approximately 200 µm, for example, a layer thickness in a range of approximately 100 nm to approximately 100 µm, for example, a layer thickness in a range of approximately 500 nm to approximately 50 µm, for example, 1 µm to 25 µm.

[0099] In various embodiments, the optically translucent layer structure 114 can further comprise or be formed from an adhesive, the adhesive optionally containing additional scattering particles. In various embodiments, the optically translucent layer structure 114 (for example, the adhesive layer) can have a layer thickness greater than 1 µm, for example, a layer thickness of several µm.

[0100] In various embodiments, an electrically insulating layer, for example SiN, can be applied or be applied between the second electrode 112 and the optically translucent layer structure 114, for example with a layer thickness in a range of approximately 300 nm to approximately 1.5 µm, for example with a layer thickness in a range of approximately 500 nm to approximately 1 µm, in order to protect electrically unstable materials, for example during a wet chemical process.

[0101] A possible advantage of this arrangement, which in various embodiments forms the “external” cavity in the front-end-of-line processes, compared to a cavity applied externally to the already completed light-emitting component by means of a back-end-of-line process, can be seen in the strong optical coupling of the optically translucent layer structure 114 to the plasmons in the OLED base contact (for example, the first electrode 104) or in the OLED top contact (for example, the second electrode 112).

[0102] In various embodiments, the mirror layer structure 116 (or optionally the mirror layer structure that may be provided on or above the second translucent electrode 112 below the optically translucent layer structure 114) can comprise one or more thin metal films (for example, Ag, Mg, Sm, Ca, as well as multiple layers and alloys of these materials) in the case of a desired high transmissivity. The one or more metal films can each have a thickness in the range of approximately 10 nm to approximately 70 nm, for example, a thickness in the range of approximately 14 nm to approximately 30 nm, or, for example, a thickness in the range of approximately 15 nm to approximately 25 nm.In this case, all the materials listed above for the second translucent electrode 112 can be used for the mirror layer structure 116 (or, if applicable, the mirror layer structure that may be provided on or above the second electrode 112 below the optically translucent layer structure 114). For example, doped metal oxide compounds such as ITO, IZO, or AZO can also be used, which can be deposited using a low-damage deposition technology such as facial target sputtering.

[0103] In various embodiments, the mirror layer structure 116 (or optionally the mirror layer structure that may be provided on or above the second translucent electrode 112 below the optically translucent layer structure 114) can be reflective, translucent, transparent, or semi-transparent, depending on whether the organic light-emitting diode 100 is configured as a top emitter and / or a bottom emitter. The materials can be selected from those listed above for the first electrode. The layer thicknesses can also be selected, depending on the desired configuration of the organic light-emitting diode 100, within the ranges described above for the first electrode.Alternatively or additionally, the mirror layer structure 116 (or, if applicable, the mirror layer structure which may be provided on or above the second translucent electrode 112 below the optically translucent layer structure 114) may have one or more dielectric mirrors.

[0104] In this case, all the materials listed above for the second electrode 112 can be used for the mirror layer structure 116 (or, if applicable, the mirror layer structure that may be provided on or above the second electrode 112 below the optically translucent layer structure 114). For example, doped metal oxide compounds such as ITO, IZO, or AZO can also be used, which can be deposited using a low-damage deposition technology such as facial target sputtering.

[0105] In various embodiments, the mirror layer structure 116 can exhibit the desired minimum lateral thermal conductivity by suitable selection of the materials of the mirror layer structure 116 and / or the layer thickness of the individual layers of the mirror layer structure 116 or of the entire mirror layer structure 116.

[0106] For example, the mirror layer structure 116 can have a stack of several different metals with the same or different layer thicknesses. For example, the mirror layer structure 116 can have a layer of copper with a layer thickness in the range of approximately 10 nm to approximately 70 nm, for example, with a layer thickness in the range of approximately 14 nm to approximately 30 nm, for example, with a layer thickness in the range of approximately 15 nm to approximately 25 nm, and additionally a layer of aluminum with a layer thickness in the range of approximately 10 nm to approximately 70 nm, for example, with a layer thickness in the range of approximately 14 nm to approximately 30 nm, for example, with a layer thickness in the range of approximately 15 nm to approximately 25 nm.In various embodiments, the mirror layer structure 116 can comprise a layer of copper with a thickness of approximately 3 µm and additionally a layer of aluminum with a thickness of approximately 5 µm. In various embodiments, the mirror layer structure 116 can comprise a layer of aluminum with a thickness of approximately 2 µm and additionally a layer of silver with a thickness of approximately 5 µm. In various embodiments, the mirror layer structure 116 can comprise a layer of copper with a thickness of approximately 3 µm and additionally a layer of silver with a thickness of approximately 2 µm.

[0107] The mirror layer structure 116 can have one or more mirrors. If the mirror layer structure 116 has several mirrors, the respective mirrors are separated from each other by means of a dielectric layer.

[0108] The one or more metal films of the mirror layer structure 116 can (each) have a layer thickness in a range of approximately 2 nm to approximately 1 mm, for example, a layer thickness in a range of approximately 200 nm to approximately 100 µm, for example, a layer thickness in a range of approximately 1 µm to approximately 10 µm.

[0109] Furthermore, the organic light-emitting diode 100 can also have encapsulation layers which can be applied, for example, as part of a back-end-of-line process, although it should be noted that in various embodiments the external cavity is formed as part of the front-end-of-line process.

[0110] Furthermore, a cover layer 118, for example a glass 118, can optionally be applied to or over the mirror layer structure 116.

[0111] In various embodiments, a simplified structure and a front-end-of-line process for a light-emitting device, such as an OLED, are provided, featuring an improved, for example, optimized (e.g., lateral) temperature distribution and improved viewing angle dependency. In various embodiments, this is achieved, for example, by using a transparent or semi-transparent cover contact (also referred to as a second electrode) and / or, optionally, thin-film encapsulation of the light-emitting device, such as the OLED.

[0112] Alternatively or additionally, this can be achieved by laminating a back mirror with high reflectivity and high thermal conductivity using an optically translucent, for example, optically transparent adhesive. Suitable adhesives include, for example, epoxides, polymethyl methacrylate, PMMA, EVA, polyesters, polyurethanes, phenol-formaldehyde resin adhesives, silicones, silane-curing polymer adhesives, and polyimide adhesives; these adhesives may also contain additives to adjust the refractive index.

[0113] In various embodiments, the light is emitted through the optically translucent, for example optically transparent, bottom contact (also referred to as the first electrode) of the light-emitting component, for example the OLED (in this case the light-emitting component is configured as a "bottom emitter").

[0114] The back mirror, i.e., generally the mirror layer structure (for example, the mirror layer structure 116), can in the simplest case have or consist of a glass plate that has been vapor-deposited with a metal of sufficient thickness (for example, a thickness of at least 1 µm).

[0115] In various embodiments, metals such as Ag, Al or one or more metal alloys can be used, which have a combination of high reflectivity and high thermal conductivity.

[0116] In various embodiments, the reflectivity of the mirror layer structure (for example, the back mirror) can be increased and corrosion suppressed by means of one or more additional dielectric layers in the mirror layer structure.

[0117] Additional layers to improve adhesion or processability can be provided in various embodiments.

[0118] The translucent, for example transparent, cover contact on the light-emitting component, for example the OLED, can consist of or have thin metal layers (for example Ag, Cu, Au, Sm, Ca, Ba, Mg, or alloys thereof) or translucent, for example transparent electrically conductive metal oxides (ITO, AZO, etc.) or a combination of the two (so-called TCO-Thin Metal-TCO, such as ITO-Ag-ITO).

[0119] The mirror layer structure, together with the adhesive and the translucent, for example transparent, top contact of the OLED, can form a passive (electrically non-operated) external optical cavity.

[0120] By coupling the external optical cavity to the OLED cavity, the color angular distortion of such an OLED can be improved.

[0121] The thermal conductivity of the mirror layer structure compensates for lateral temperature gradients in the light-emitting component, for example in the OLED.

[0122] In various embodiments, light-scattering particles can be embedded in the adhesive layer (also referred to as the adhesive layer), which can further improve the chromatic aberration and output efficiency. In various embodiments, dielectric scattering particles such as metal oxides like silicon dioxide (SiO₂), zinc oxide (ZnO), zirconium oxide (ZrO₂), indium tin oxide (ITO), indium zinc oxide (IZO), gallium oxide (Ga₂O₃), aluminum oxide, or titanium oxide can be used as light-scattering particles. Other particles can also be suitable, provided they have a refractive index different from the effective refractive index of the matrix of the translucent layer structure, for example, air bubbles, acrylate, or hollow glass spheres. Furthermore, metallic nanoparticles, such as gold, silver, iron nanoparticles, or the like, can be used as light-scattering particles.

[0123] Fig. Figure 2 shows an organic light-emitting diode 200 as an implementation of a light-emitting device according to various embodiments.

[0124] The organic light-emitting diode 200 according to Fig. 2 is in many aspects the same as the organic light-emitting diode 100 according to Fig. 1, therefore, only the differences of the organic light-emitting diode 200 according to Fig. 2 to the organic light-emitting diode 100 according to Fig. 1 will be explained in more detail; regarding the other elements of the organic light-emitting diode 200 according to Fig. 2 refers to the above statements regarding the organic light-emitting diode 100 according to Fig. 1 referred.

[0125] In contrast to the organic light-emitting diode 100 according to Fig. 1 are 200 according to the organic light-emitting diode Fig. 2 the mirror layer structure 202 and the optically translucent layer structure 204 are not formed on or above the second electrode 112, but below the first electrode 104.

[0126] In these embodiments, the energy source is connected to the first electrical connection of the first electrode 104 and to the second electrical connection of the second electrode 112.

[0127] The organic light-emitting diode 200 according to Fig. 2 can be or become a top emitter.

[0128] In various embodiments, the organic light-emitting diode 200 is designed according to Fig. Figure 2 illustrates a surface-emitting OLED with a "remote" cavity approach on the substrate side. Both contacts (i.e., the first electrode 104 and the second electrode 112) are semi-translucent in this embodiment, for example, semi-transparent.

[0129] Furthermore, the organic light-emitting diode 200 according to Fig. 2. An encapsulation layer structure 206, for example in the form of a thin-film encapsulation 206, is arranged on or above the second electrode 112. Furthermore, a layer 208 made of an adhesive (optionally with additional light-scattering particles), for example a second optically translucent layer structure 208 on or above the second electrode 112, can be arranged on or above the encapsulation layer structure 206.

[0130] Furthermore, a cover layer 118, for example a glass 118, can optionally be applied to or over the second optically translucent layer structure 208.

[0131] Thus, the substrate-side emitting light-emitting component (for example, the substrate-side emitting OLED) in various embodiments is clearly transferred to a surface-side emitting light-emitting component (for example, a surface-side emitting OLED), as it or they are in Fig. 2 or Fig. Figure 3 shows that the external metal mirror can be positioned below the optically translucent, for example transparent, base contact. In this case, the light exits the OLED, for example through the optically translucent, for example transparent, top contact (for example the second electrode) and is thus configured as a top emitter.

[0132] The arrangement of the mirror layer structure, for example of a metal mirror, can be done in various ways, for example in one of the following ways: 1) Applying a sufficiently thick mirror layer structure, for example a metal layer, and optionally one or more dielectric auxiliary layers to the underside of the substrate. 2) Applying a mirror-like layer structure, for example a metal foil, to the underside of the substrate. 3) Deposition of a sufficiently thick mirror layer structure, for example, a sufficiently thick metal mirror, onto the substrate; application of a thick optically translucent, for example, transparent layer or layer structure; followed by deposition of the optically translucent, for example, transparent base contact of the light-emitting component, for example, the OLED. The thick optically translucent, for example, transparent layer or layer structure should have the smoothest possible surface. For this reason, in various embodiments, the deposition of a thick SiN layer using a CVD process (Chemical Vapor Deposition) may be provided. This layer can have the additional advantage of possessing a very high refractive index (for example, approximately n = 1.8), which further enhances the effect of the external passive cavity.

[0133] In the processes according to 1.) and 2.), the mirror layer structure together with the substrate and the optically translucent, for example transparent, base contact of the OLED forms the external passive cavity.

[0134] In a limiting case where the external passive cavity is extremely thin or even disappears, the thick mirror layer structure, for example, the thick metal mirror, can be applied directly to the substrate and simultaneously form the lower contact, i.e., the first electrode 302 of the light-emitting device 300, for example, an OLED 300. Such a light-emitting device 300 is in Fig. 3 shown.

[0135] The remaining layer stack of the light-emitting component 300 according to Fig. 3 is equal to the layer stack of the light-emitting component 200 according to Fig. 2.

[0136] Fig. Figures 4A to 4F show the light-emitting component 100 according to various embodiments at different times during its manufacture. The other light-emitting components 200, 300 can be manufactured in a corresponding manner.

[0137] Fig. Figure 4A shows the light-emitting component 100 at a first time point 400 during its manufacture.

[0138] At this point, the first electrode 104 is applied to the substrate 102, for example by deposition, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip coating process; a spin coating process; printing; doctor blade application; or spraying.

[0139] In various embodiments, plasma-enhanced chemical vapor deposition (PE-CVD) can be used as a CVD process. In this process, a plasma is generated in a volume above and / or around the element onto which the layer is to be deposited. At least two gaseous starting compounds are introduced into this volume, ionized within the plasma, and excited to react with each other. Generating the plasma may allow the surface temperature of the element to be heated to enable the formation of, for example, a dielectric layer, to be lower compared to a plasma-free CVD process. This can be advantageous, for instance, if the element, such as the light-emitting electronic component to be formed, would be damaged at a temperature above a certain maximum.The maximum temperature of a light-emitting electronic component to be formed, according to various embodiments, can be approximately 120 °C, so that the temperature at which, for example, the dielectric layer is applied can be less than or equal to 120 °C and, for example, less than or equal to 80 °C.

[0140] Fig. Figure 4B shows the light-emitting component 100 at a second time point 402 during its manufacture.

[0141] At this point, one or more perforated conductor layers 110 are applied to the first electrode 104, for example by deposition, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip coating process; a spin coating process; printing; doctor blade coating; or spraying.

[0142] Fig. Figure 4C shows the light-emitting component 100 at a third time point 404 during its manufacture.

[0143] At this point, one or more emitter layers 108 are applied to one or more hole conduction layers 110, for example by deposition, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip coating process; a spin coating process; printing; doctor blade coating; or spraying.

[0144] Fig. 4D shows the light-emitting component 100 at a fourth time point 406 during its manufacture.

[0145] At this point, the second electrode 112 is applied to one or more further organic functional layers (if present) or to one or more emitter layers 108, for example by deposition, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip coating process; a spin coating process; printing; doctor blade coating; or spraying.

[0146] Fig. Figure 4E shows the light-emitting component 100 at a fifth time point 408 during its manufacture.

[0147] At this point, the optically translucent layer structure 114 is applied to the second electrode 112, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip coating process; a spin coating process; printing; doctor blade application; or spraying.

[0148] Fig. Figure 4F shows the light-emitting component 100 at a sixth time point 410 during its manufacture.

[0149] At this point, the mirror layer structure 116 with the lateral thermal conductivity described above is applied to the optically translucent layer structure 114, for example by means of a CVD process (chemical vapor deposition) or by means of a PVD process (physical vapor deposition, for example sputtering, ion-assisted deposition or thermal evaporation), alternatively by means of a plating process; a dip coating process; a spin coating process; printing; doctor blade application; or spraying.

[0150] Then, optionally, the top layer 118 is applied, making the light-emitting component 100 compliant with Fig. 1 is completed.

[0151] Fig. Figure 5 shows a flowchart 500, in which a method for manufacturing a light-emitting component according to various embodiments is illustrated.

[0152] In various embodiments, a first electrode is formed in 502, for example on or above a substrate. Furthermore, an organic electroluminescent layer structure is formed on or above the first electrode in 504, and a second translucent electrode is formed on or above the organic electroluminescent layer structure in 506. A mirror layer structure is also formed on or above the second electrode in 508, wherein the mirror layer structure has a lateral thermal conductivity of at least 1 × 10⁻⁶. -3 exhibits W / K.

[0153] Fig. Figure 6 shows a flowchart 600, in which a method for manufacturing a light-emitting component according to various embodiments is shown.

[0154] In various embodiments, a mirror layer structure is formed in 602, which has a lateral thermal conductivity of at least 1 * 10 -3 W / K exhibits. Furthermore, in 604, an organic electroluminescent layer structure is formed on or above the mirror layer structure. In 606, an electrode can be formed on or above the organic electroluminescent layer structure.

[0155] One advantage of various embodiments can be seen in the possibility of a simple process that simultaneously improves, for example optimizes, the viewing angle dependence of the emission color as well as the heat distribution within the light-emitting component, such as the OLED.

[0156] By applying the mirror layer structure (which can also be described as a heat distribution layer) (in various embodiments, for example, the Ag, Al mirror) to the back glass, the heat input into the OLED can be avoided, for example, when directly vapor-depositing a thick aluminum cathode.

[0157] In various embodiments, the adhesive can comprise or be a lamination adhesive. In various embodiments, light-scattering particles can be incorporated into the adhesive.

Claims

[1] Light-emitting component (100) comprising: • a first electrode (104); • an organic electroluminescent layer structure (106) on or above the first electrode (104); • a second translucent electrode (112) on or above the organic electroluminescent layer structure (106); • a mirror layer structure (116) on or above the second electrode (112), wherein the mirror layer structure (116) has a lateral thermal conductivity of at least 1 * 10 -3 exhibits W / K; and • an optically translucent layer structure (114) between the second translucent electrode (112) and the mirror layer structure (116), wherein • the optically translucent layer structure (114) and the mirror layer structure (116) together form a cavity that is optically coupled to a microcavity of the light-emitting component (100). [2] Light-emitting component (100) according to claim 1, wherein the optically translucent layer structure (114) comprises scattering particles. [3] Light-emitting component (200), comprising: • a mirror layer structure (202) having a lateral thermal conductivity of at least 1 * 10 -3 W / K exhibits; • a first translucent electrode (104); • an organic electroluminescent layer structure (106) on or above the mirror layer structure (202); • a second electrode (112) on or above the organic electroluminescent layer structure (106); and • an optically translucent layer structure (204) between the mirror layer structure (202) and the first translucent electrode (104), wherein • the optically translucent layer structure (204) and the mirror layer structure (202) together form a cavity that is optically coupled to a microcavity of the light-emitting component (200). [4] Light-emitting component (100, 200) according to claim 3, wherein the optically translucent layer structure (204) comprises scattering particles. [5] Light-emitting component (100, 200) according to one of claims 1 to 4, further comprising: an encapsulation layer structure (206) on or above the second electrode (112) and / or below the first electrode (104). [6] Light-emitting component (100, 200) according to any one of claims 1 to 5, further comprising: a second optically translucent layer structure (208) on or above the second electrode (112). [7] Light-emitting component (100, 200) according to claim 6, wherein the second optically translucent layer structure (208) comprises light-scattering particles. [8] Light-emitting component (100, 200) according to any one of claims 1 to 7, wherein the mirror layer structure (116, 202) has a layer thickness of at least 1 µm.

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