Particle beam device with an imaging device for imaging an object and for imaging a structural unit in the particle beam device and method for operating the particle beam device

Abstract

Particle beam device (100, 200, 400) for the analysis and / or processing of an object (114, 425), with - at least one beam generator (101, 301, 402) for generating a particle beam with charged primary particles, - at least one objective lens (107, 304, 421) for focusing the particle beam onto the object (114, 425), wherein interaction particles and / or interaction radiation are produced / generated when the particle beam interacts with the object (114, 425), - at least one detector (116, 117, 119, 121, 419, 428) for detecting the interaction particles and / or interaction radiation, and with - at least one imaging device (500) for imaging the object (114, 425) and / or for imaging a component (125) of the particle beam device (100, 200, 400), with ▪ at least one lighting unit (501) having a first switching state and a second switching state for illuminating the object (114, 425) and / or for illuminating the assembly (125) with illuminating light, wherein in the first switching state the illuminating light consists exclusively of light from a first spectral range and wherein in the second switching state the illuminating light consists exclusively of light from a second spectral range, ▪ at least one control unit (506) for switching the illumination unit (501) into the first switching state or into the second switching state, wherein the control unit (506) switches the illumination unit (501) into the first switching state so that the light of the first spectral range is directed onto the object (114, 425) and / or the assembly (125) when (i) imaging or examination of the object (114, 425) with the particle beam of the particle beam device (100, 200, 400) is not performed or when the detector (116, 117, 119, 121, 419, 428) (ii) is not sensitive to the light of the first spectral range, (iii) cannot detect the light of the first spectral range due to its arrangement in the particle beam device (100, 200, 400), or (iv) is switched off, and with ▪ at least one camera unit (504) for imaging the object (114, 425) and / or for imaging the assembly unit (125) with light of the first spectral range in the first switching state of the illumination unit (501) or with light of the second spectral range in the second switching state of the illumination unit (501).

Description

[0001] The invention relates to a particle beam device with an imaging device for imaging an object within the particle beam device and / or for imaging a component of the particle beam device. For example, the particle beam device is an electron beam device and / or an ion beam device. Furthermore, the invention relates to a method for operating the particle beam device.

[0002] Electron beam instruments, in particular a scanning electron microscope (hereinafter also referred to as SEM) and / or a transmission electron microscope (hereinafter also referred to as TEM), are used to examine objects (also referred to as samples) in order to obtain knowledge about the properties and behavior of the objects under certain conditions.

[0003] In a SEM, an electron beam (hereinafter also called the primary electron beam) is generated by a beam generator and focused onto the object under investigation by a beam guidance system. An objective lens is used for focusing. A deflection device guides the primary electron beam in a raster pattern across the surface of the object. The electrons of the primary electron beam interact with the object. As a result of this interaction, interaction particles and / or interaction radiation are produced. The interaction particles include electrons. Specifically, electrons are emitted by the object – so-called secondary electrons – and electrons from the primary electron beam are backscattered – so-called backscattered electrons. The interaction particles form the secondary beam and are detected by at least one particle detector.The particle detector generates detection signals which are used to create an image of the object. This results in a representation of the object under investigation.

[0004] Interaction radiation includes, for example, X-rays or cathodoluminescence. It is detected, for example, with a radiation detector and is used in particular to investigate the material composition of the object.

[0005] In a TEM, a primary electron beam is also generated by a beam generator and focused onto the object under investigation using a beam guidance system. The primary electron beam passes through the object. As the primary electron beam passes through the object, the electrons interact with the material. The electrons passing through the object are focused by a system containing a lens onto a fluorescent screen or a detector—for example, a camera. This system may also include a projection device. Imaging can also be performed in the scan mode of the TEM. Such a TEM is generally referred to as a STEM.Additionally, it may be possible to detect electrons backscattered from the object under investigation and / or secondary electrons emitted by the object under investigation using a further detector in order to image the object under investigation.

[0006] It is known to integrate the functions of a STEM and a SEM into a single particle beam instrument. This particle beam instrument thus enables the investigation of objects with a SEM function and / or a STEM function.

[0007] Furthermore, it is known from the prior art to analyze and / or process an object in a particle beam instrument using both electrons and ions. For example, an electron beam column, functioning as a SEM, is arranged on the particle beam instrument. Additionally, an ion beam column is arranged on the particle beam instrument. Ions are generated by an ion generator located in the ion beam column and used to process the object. For example, material is removed from the object or a material is deposited onto it. Additionally or alternatively, the ions are used for imaging. The electron beam column with the SEM function serves primarily for further investigation of the processed or unprocessed object, but also for processing the object itself.

[0008] The aforementioned prior art particle beam instruments each have a sample chamber in which an object to be analyzed and / or processed is arranged on a sample stage. It is also known to arrange several different objects simultaneously on the sample stage in order to analyze and / or process them sequentially using the respective particle beam instrument that includes the sample chamber. The sample stage is designed to be movable in order to position the object or objects in the sample chamber. For example, a relative position of the object or objects with respect to an objective lens is set. A known sample stage is designed to be movable in three mutually perpendicular directions. In addition, the sample stage can be rotated about two mutually perpendicular axes of rotation.

[0009] It is known to operate the sample chamber in different pressure ranges. For example, the sample chamber is operated in a first pressure range or in a second pressure range. The first pressure range only includes pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, the sample chamber is vacuum-sealed during examination of the object(s) with the particle beam device. Therefore, a clear view of the object(s) is not readily available.

[0010] To obtain a view of the object(s) and to be able to position the object(s) in a controlled manner using the sample stage, it is known to use an imaging device for imaging the object(s) and for generating an image of the object(s). Furthermore, it is known to use the imaging device for imaging a component of the particle beam instrument. For example, the component is arranged in the sample chamber of the particle beam instrument. The component is configured, in particular, as a gas injection system, a micromanipulator, a movable detector, and / or a charge compensation unit. The known imaging device includes a camera which is mounted on or in the sample chamber and which images the object(s) and / or the component.Thus, for example, the position of the object(s) and / or the assembly can be observed and adjusted by viewing the images generated by the camera. Two imaging devices are known from the prior art, which are explained below.

[0011] The first known imaging device enables the observation of an object and / or a component arranged on the sample stage during simultaneous imaging or processing of the object with the primary particle beam of a particle beam instrument. In other words, the first imaging device allows the object and / or the component to be observed by means of the camera while the primary particle beam is focused on the object and while interaction particles and / or interaction radiation are detected by means of one or more detectors. The first imaging device includes an illumination unit that generates infrared light. It is known to use infrared light with a wavelength of 950 nm. The object and / or the component is illuminated by the infrared light. The object and / or the component is imaged by means of the camera, which is sensitive to infrared light.The images of the object produced by the camera are then used to observe the object. Furthermore, the images of the assembly produced by the camera are then used to observe the assembly. The first known imaging device enables imaging of the object or the assembly with the camera and simultaneous examination of the object with the primary particle beam of the particle beam instrument, since the detector or detectors for detecting the interaction particles and / or interaction radiation are only minimally affected by the infrared light, thus ensuring sufficient functionality of the detector or detectors. However, the first known imaging device has the disadvantage that the camera of the first known imaging device only produces black-and-white images.Color differences in the objects, object areas, or building units cannot be detected in the image produced by the first known imaging device. Likewise, color information that the object or building unit possesses / contains cannot be detected in the black-and-white image.

[0012] The second known imaging device does not produce black and white images, but rather color images of an object located on the sample stage in the sample chamber, or color images of a component located in the sample chamber. This second known imaging device includes a lighting unit located on the sample chamber, which introduces white light into the sample chamber. This white light illuminates the object and / or the component. A camera images the object and produces color images of it. Additionally or alternatively, the camera images the component and produces color images of the component.However, imaging the object or component using the second known imaging device (and thus generating a color image) and detecting interaction particles and / or interaction radiation simultaneously are not possible, or only possible simultaneously if the detectors for detecting the interaction particles / interaction radiation are arranged, switched, and / or designed in the particle beam instrument in such a way that they are not, or only minimally, disturbed by the white light of the illumination unit. Typically, the second known imaging device only produces a color overview image, which cannot be updated during the detection of the interaction particles and / or interaction radiation.

[0013] Regarding the state of the art, reference is made to US 2010 / 0163729 A1.

[0014] The invention is based on the objective of providing a particle beam device with an imaging device which enables the recording and generation of images of an object or a component in a sample chamber of the particle beam device in every operating state of the particle beam device.

[0015] According to the invention, this problem is solved with a particle beam device comprising an imaging device having the features of claim 1. A method according to the invention for operating the particle beam device is given by the features of claim 14. Further features of the invention will become apparent from the following description, the appended claims and / or the accompanying figures.

[0016] An imaging device is provided for imaging an object in a particle beam instrument and / or for imaging a component of the particle beam instrument. For example, the component of the particle beam instrument is configured as a gas injection system, a micromanipulator, a movable detector, and / or a charge compensation unit. The invention is not limited to the aforementioned components. Rather, any component of the particle beam instrument can be used for the invention. In particular, it is provided that the component is arranged in an object chamber—i.e., a sample chamber—of the particle beam instrument.

[0017] For example, the particle beam device is configured as an electron beam device and / or as an ion beam device. The particle beam device is used for the analysis, in particular for imaging, and / or for the processing of an object. Specifically, the particle beam device is designed to include a beam generator for producing a particle beam with charged primary particles. For example, the primary particles are electrons or ions. Furthermore, the particle beam device includes, for example, an objective lens for focusing the particle beam onto the object. When the particle beam interacts with the object, interaction particles and / or interaction radiation are generated. The interaction particles are, for example, secondary particles, in particular secondary electrons, and / or backscattered particles, for example, backscattered electrons. The interaction radiation is, for example, in the form of X-rays or cathodoluminescence.The interaction radiation is detected, for example, with a radiation detector.

[0018] The imaging device comprises at least one illumination unit. The illumination unit has a first switching state and a second switching state for illuminating the object and / or the assembly with light. In the first switching state, the illumination consists exclusively of light from a first spectral range. For example, the illumination may consist of only a specific wavelength from the first spectral range. Alternatively, the illumination may be a superposition of a first light with a first wavelength and a second light with a second wavelength, where both wavelengths are within the first spectral range. In the second switching state, the illumination consists exclusively of light from a second spectral range. For example, the illumination may consist of only a specific wavelength from the second spectral range.Alternatively, for example, the illumination light is provided for by a superposition of a third light with a third wavelength and a fourth light with a fourth wavelength, where the third wavelength and the fourth wavelength lie in the second spectral range.

[0019] In other words, the lighting unit emits either light from a first spectral range or light from a second spectral range. In one embodiment of the invention, for example, the first and second spectral ranges overlap slightly, with one overlap range being, for example, less than 20 nm. In this embodiment, the light from the first spectral range contains less than 10%, less than 5%, or less than 1% of the wavelengths from the overlap range. Furthermore, in this embodiment, the light from the second spectral range contains less than 10%, less than 5%, or less than 1% of the wavelengths from the overlap range.In another embodiment of the invention, for example, the first spectral range and the second spectral range are different. In this embodiment, the first spectral range and the second spectral range do not have a common set of wavelengths.

[0020] The object and / or the assembly is illuminated with the appropriate light. The imaging device also includes at least one control unit for switching the lighting unit to the first or second switching state.

[0021] Furthermore, the imaging device includes a camera unit for imaging the object and / or the assembly with light of the first spectral range in the first switching state of the illumination unit or with light of the second spectral range in the second switching state of the illumination unit.

[0022] The imaging device ensures that it is possible to image an object, for example located in the sample chamber of a particle beam device, or an image of a component, for example located in the sample chamber of the particle beam device, with a camera in any operating state of the particle beam device.If, for example, an image or examination of an object arranged in the sample chamber is not performed with the particle beam of the particle beam device, or if, for example, a detector used in the particle beam device to detect interaction particles and / or interaction radiation is not sensitive to the light of the first spectral range, cannot detect the light of the first spectral range due to its arrangement in the particle beam device, or is switched off, then the control unit switches the illumination unit to the first switching state so that light of the first spectral range is directed onto the object and / or the assembly. The first spectral range consists, for example, exclusively of white light or exclusively of the wavelength range of visible light.In this case, it is possible to capture color images using the camera unit, so that even color-coded or specially designed objects or components can be clearly identified. A color image of the object or component is therefore also possible even if the detector used in the particle beam instrument to detect interaction particles and / or interaction radiation is not sensitive to light in the first spectral range, for example, an Everhart-Thornley detector or an ion detector with a metal-coated detection surface that blocks light in the first spectral range, especially white light.A color image of the object or the assembly is therefore also possible if the detector used in the particle beam instrument for detecting interaction particles and / or interaction radiation is positioned within the particle beam instrument in such a way that it is not affected by light from the first spectral range. In both of the aforementioned embodiments, simultaneous acquisition of a color image of the object and imaging and examination of the object with the particle beam of the particle beam instrument are possible. Furthermore, simultaneous acquisition of a color image of the assembly and imaging and examination of the object with the particle beam of the particle beam instrument are also possible.A color image of the object or the assembly is therefore also possible when the detector used in the particle beam device to detect interaction particles and / or interaction radiation is switched off.

[0023] However, if the detector for detecting interaction particles or interaction radiation is disturbed by light from the first spectral range in the first switching state of the illumination unit, the control unit switches the illumination unit to the second switching state. In the second switching state, light from the second spectral range is used to illuminate and image the object and / or the assembly. For example, the light from the second spectral range is infrared light. The light from the second spectral range is designed, for example, such that simultaneous acquisition of an image of the object and / or the assembly with the camera unit of the imaging device and detection of the interaction particles or interaction radiation for examination and imaging of the object with the particle beam of the particle beam instrument are possible.

[0024] The imaging device ensures, in particular, that the object and / or the assembly can be observed in every operating state of the particle beam device and that the position of the object, which is arranged, for example, on a sample table of the particle beam device, and / or the position of the assembly can be controlled and adjusted.

[0025] As mentioned above, one embodiment of the imaging device provides, additionally or alternatively, that the first spectral range comprises exclusively the wavelength range of visible light. This is, for example, the wavelength range from 380 nm to 780 nm, including the range boundaries. In another embodiment of the imaging device, the first spectral range is provided, additionally or alternatively, to comprise exclusively white light. This configuration of the first spectral range ensures that good color images of the object and / or the assembly can be produced with the camera unit.

[0026] In yet another embodiment of the imaging device, the second spectral range is additionally or alternatively configured to consist exclusively of infrared light wavelengths. In particular, it is provided, for example, that the second spectral range consists exclusively of near-infrared light wavelengths. For instance, the second spectral range consists exclusively of light with wavelengths from 780 nm to 3 µm. This configuration of the second spectral range ensures that images of the object and / or the component can be acquired with the imaging device even while the object is simultaneously being examined and / or processed with the particle beam of the particle beam instrument.This design, due to the use of light from the second spectral range, also allows for the acquisition of images of the object and / or the assembly with the imaging device, provided that the detector for detecting the interaction particles and / or interaction radiation is designed, switched, and / or arranged in such a way that it would be disturbed by the light from the first spectral range if light from the first spectral range were used. The image produced by the imaging device is then a black-and-white image.

[0027] In one embodiment of the imaging device, the control unit is additionally or alternatively designed to adjust and / or regulate the intensity of the light in the first spectral range and / or the light in the second spectral range. In other words, the control unit is configured to adjust and / or regulate the intensity of the light in the first spectral range and / or the light in the second spectral range. This embodiment ensures that interfering influences on a particle detector in the particle beam instrument can be minimized while simultaneously guaranteeing good imaging of the object and / or the assembly by the imaging device.

[0028] In one embodiment of the imaging device, it is additionally or alternatively provided that the imaging device has at least one first illuminating unit for generating the light of the first spectral range. In particular, it is provided that the first illuminating unit also has a first filtering unit. The first filtering unit is, for example, configured such that light with a wavelength that does not fall within the first spectral range is filtered out of the light generated by the first illuminating unit. Alternatively, it is provided that the first illuminating unit generates only light of the first spectral range. In a further embodiment of the imaging device, it is provided that the first illuminating unit has at least one LED and / or is designed as an LED. In particular, the LED is designed as a white light-emitting LED.

[0029] For example, this is an LED that operates on the principle of luminescence wavelength conversion. The blue radiation emitted by the LED is used to convert a portion of its light into yellowish light with the addition of phosphor. The resulting spectra combine to produce white light. Additionally or alternatively, the first light source can have multiple LEDs, for example, at least one first LED, at least one second LED, and / or at least one third LED. Specifically, the first LED can be configured to emit red light, the second LED to emit green light, and the third LED to emit blue light. Mixing the red, green, and blue light produces light that is perceived as white.

[0030] In a further embodiment of the imaging device, it is additionally or alternatively provided that the imaging device has at least one second light source for generating the light of the second spectral range. In particular, it is provided that the second light source also has a second filter unit. The second filter unit is, for example, configured such that light with a wavelength that does not fall within the second spectral range is filtered out of the light generated by the second light source. Alternatively, it is provided that the second light source generates only light of the second spectral range. In a further embodiment of the imaging device, it is provided that the second light source has at least one LED and / or is designed as an LED. For example, this LED is designed as an infrared LED that emits light in the near-infrared range.In particular, the infrared LED is designed to emit infrared light with a wavelength of 800 nm to 1000 nm. For example, an infrared LED with a wavelength of 950 nm is used. It is explicitly stated that the invention is not limited to these wavelengths. Rather, any wavelength suitable for carrying out the invention can be used for the light in the second spectral range.

[0031] In yet another embodiment of the imaging device, the camera unit additionally or alternatively comprises at least one detection unit with a detector sensitivity. This detector sensitivity is configured for both the light of the first spectral range in the first switching state of the illumination unit and the light of the second spectral range in the second switching state of the illumination unit. In other words, the detection unit of the camera unit detects both light of the first spectral range and light of the second spectral range.

[0032] In yet another embodiment of the imaging device, it is additionally or alternatively provided that the camera unit has at least one CCD or at least one CMOS.

[0033] The invention relates to a particle beam device. For example, the particle beam device according to the invention is configured as an electron beam device and / or as an ion beam device. The particle beam device according to the invention serves for the analysis, in particular for imaging, and / or for the processing of an object. The particle beam device according to the invention has at least one beam generator for generating a particle beam with charged primary particles. For example, the primary particles are electrons or ions. Furthermore, the particle beam device according to the invention has at least one objective lens for focusing the particle beam onto the object, wherein, upon interaction of the particle beam with the object, interaction particles and / or interaction radiation are generated. The interaction particles are, for example, secondary particles, in particular secondary electrons, and / or backscattered particles, for example, backscattered electrons.The interaction radiation is, for example, X-rays or cathodoluminescent light. Furthermore, the particle beam device according to the invention has at least one detector for detecting the interaction particles and / or interaction radiation. In addition, the particle beam device according to the invention is provided with an imaging device for imaging the object and / or for imaging a component of the particle beam device, wherein the imaging device has at least one of the features mentioned above or below, or a combination of at least two of the features mentioned above or below. The particle beam device according to the invention has the same advantages as the imaging device.

[0034] In one embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the particle beam device has at least one mirror corrector for correcting chromatic and / or spherical aberration.

[0035] As mentioned above, in a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the particle beam device is designed as an electron beam device and / or as an ion beam device.

[0036] In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the beam generator for generating a particle beam with charged primary particles is designed as a first beam generator for generating a first particle beam with first charged primary particles, and the objective lens is designed as a first objective lens for focusing the first particle beam onto the object. Furthermore, the particle beam device has at least one second beam generator for generating a second particle beam with second charged primary particles and at least one second objective lens for focusing the second particle beam onto the object. The second charged primary particles are, for example, electrons or ions.

[0037] In one embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the component is designed, in particular, as a gas injection system, as a micromanipulator, as a movable detector, and / or as a charge compensation unit. The invention is not limited to the aforementioned components. Rather, any component of the particle beam device can be used for the invention. In particular, it is provided that the component is arranged in an object chamber—i.e., a sample chamber—of the particle beam device.

[0038] The invention also relates to a method for operating the particle beam device, which has at least one of the features mentioned above or below, or a combination of at least two of the features mentioned above or below. In the method according to the invention, the control unit switches the illumination unit to the first switching state or the second switching state. In the first switching state, the object and / or the assembly is imaged by the camera unit using light from the first spectral range. In the second switching state, the object and / or the assembly is imaged by the camera unit using light from the second spectral range. In one embodiment of the method according to the invention, it is additionally or alternatively provided that the particle beam is directed away from the object or switched off in the first switching state.This is particularly intended when a color image of the object is to be created, as explained above.

[0039] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the intensity of the light of the first spectral range and / or the intensity of the light of the second spectral range is adjusted.

[0040] In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the detector is switched off in the first switching state. Additionally or alternatively, it is provided that the detector is moved into a position such that no light of the first spectral range reaches the detector in the first switching state. Again, additionally or alternatively, it is provided that the detector is moved into a position such that only a minimal intensity of light of the first spectral range reaches the detector in the first switching state. Additionally or alternatively, it is provided that the detector is switched off. In all the aforementioned cases, it is then still possible to generate color images of the object and / or the assembly using light of the first spectral range.

[0041] The invention is described in more detail below with reference to exemplary embodiments and drawings. These drawings show... Fig. 1 a first embodiment of a particle beam device according to the invention; Fig. 2 a second embodiment of a particle beam device according to the invention; Fig. 3 a third embodiment of a particle beam device according to the invention; Fig. 4 a schematic representation of a first embodiment of an imaging device for a particle beam device; Fig. 5 a schematic representation of a second embodiment of an imaging device for a particle beam device; Fig. 6 an embodiment of a lighting unit; Fig. 7 another embodiment of a lighting unit; Fig. 8 a method for operating a particle beam device with an imaging device; Fig. 9 a further process step of a further embodiment of the method according to Fig. 8; as well as Fig. 10 a further process step of a further embodiment of the process according to Fig. 8.

[0042] The invention will now be explained in more detail using particle beam devices in the form of a SEM and in the form of a combination device comprising an electron beam column and an ion beam column. It is expressly pointed out that the invention can be used with any particle beam device, in particular with any electron beam device and / or any ion beam device.

[0043] Fig. Figure 1 shows a schematic representation of a SEM 100. The SEM 100 has a first radiation source in the form of an electron source 101, which is configured as a cathode. Furthermore, the SEM 100 is provided with an extraction electrode 102 and an anode 103, which is mounted on one end of a beam guide tube 104 of the SEM 100. For example, the electron source 101 is configured as a thermal field emitter. However, the invention is not limited to such an electron source 101. Rather, any electron source can be used.

[0044] Electrons emitted from electron source 101 form a primary electron beam. Due to a potential difference between electron source 101 and anode 103, the electrons are accelerated to anode potential. In the embodiment shown here, the anode potential is 1 kV to 20 kV relative to the ground potential of a sample chamber housing 120, for example 5 kV to 15 kV, and in particular 8 kV. Alternatively, it could also be at ground potential.

[0045] Two condenser lenses are arranged on the beamline tube 104: a first condenser lens 105 and a second condenser lens 106. Looking from the electron source 101 towards a first objective lens 107, the first condenser lens 105 and then the second condenser lens 106 are arranged. It is explicitly noted that other embodiments of the SEM 100 may have only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. The first aperture unit 108, together with the anode 103 and the beamline tube 104, is at a high-voltage potential, namely the potential of the anode 103 or at ground. The first aperture unit 108 has numerous first aperture openings 108A, one of which is located in Fig. Figure 1 illustrates this. For example, two first aperture openings 108A are present. Each of the numerous first aperture openings 108A has a different opening diameter. By means of an adjustment mechanism (not shown), it is possible to set a desired first aperture opening 108A on an optical axis OA of the SEM 100. It is explicitly noted that in further embodiments, the first aperture unit 108 may only be provided with a single aperture opening 108A. In this embodiment, an adjustment mechanism cannot be provided. The first aperture unit 108 is then designed to be stationary. A stationary second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, it is provided that the second aperture unit 109 is designed to be movable.

[0046] The first objective lens 107 has pole shoes 110 in which a bore is formed. The beam guide tube 104 is guided through this bore. Coils 111 are also arranged in the pole shoes 110.

[0047] An electrostatic deceleration device is arranged in a lower section of the beam guide tube 104. This device comprises a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is located at one end of the beam guide tube 104, which faces an object 114. The tubular electrode 113, together with the beam guide tube 104, is at the potential of the anode 103, while the single electrode 112 and the object 114 are at a potential lower than that of the anode 103. In this case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be decelerated to a desired energy required for the examination of the object 114.

[0048] The SEM 100 also features a scanning device 115, by which the primary electron beam can be deflected and scanned across the object 114. The electrons of the primary electron beam interact with the object 114. As a result of this interaction, interaction particles are produced, which are then detected. In particular, electrons are emitted from the surface of the object 114 – so-called secondary electrons – or electrons from the primary electron beam are backscattered – so-called backscattered electrons.

[0049] Object 114 and the single electrode 112 can also be at different potentials, including potentials different from ground. This makes it possible to adjust the location of the delay of the primary electron beam relative to object 114. For example, if the delay is performed quite close to object 114, imaging errors are reduced.

[0050] For the detection of secondary electrons and / or backscattered electrons, a detector array comprising a first detector 116 and a second detector 117 is arranged in the beamline 104. The first detector 116 is arranged along the optical axis OA on the source side, while the second detector 117 is arranged along the optical axis OA on the object side within the beamline 104. The first detector 116 and the second detector 117 are offset from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 each have a through-hole through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beamline 104, respectively. The optical axis OA of the SEM 100 passes through the respective through-holes.

[0051] The second detector 117 is primarily used for the detection of secondary electrons. Upon exiting object 114, the secondary electrons initially possess low kinetic energy and arbitrary directions of motion. The strong suction field emanating from the tubular electrode 113 accelerates the secondary electrons towards the first objective lens 107. The secondary electrons enter the first objective lens 107 in an approximately parallel direction. The beam diameter of the secondary electrons remains small even within the first objective lens 107. The first objective lens 107 exerts a strong effect on the secondary electrons, producing a comparatively short focus with sufficiently steep angles to the optical axis OA, such that the secondary electrons diverge considerably after passing through the focus and strike the second detector 117 on its active surface.Electrons backscattered from object 114—that is, backscattered electrons which, compared to the secondary electrons, have a relatively high kinetic energy upon exiting object 114—are only detected to a small extent by the second detector 117. The high kinetic energy and the angles of the backscattered electrons to the optical axis OA upon exiting object 114 result in a beam waist, i.e., a beam region with a minimum diameter, of backscattered electrons located near the second detector 117. A large proportion of the backscattered electrons pass through the aperture of the second detector 117. The first detector 116 therefore serves primarily to detect the backscattered electrons.

[0052] In a further embodiment of the SEM 100, the first detector 116 can additionally be equipped with a retarding grid 116A. The retarding grid 116A is arranged on the side of the first detector 116 facing the object 114. The retarding grid 116A has a negative potential with respect to the potential of the beam guide tube 104, such that only backscattered electrons with high energy pass through the retarding grid 116A to the first detector 116. Additionally or alternatively, the second detector 117 has another retarding grid, which is configured analogously to the aforementioned retarding grid 116A of the first detector 116 and has an analogous function.

[0053] Furthermore, the SEM 100 has a chamber detector 119 in the sample chamber 120, for example an Everhart-Thornley detector or an ion detector, which has a metal-coated detection surface that shields light, especially white light.

[0054] The detection signals generated by the first detector 116 and the second detector 117 are used to generate an image or images of the surface of object 114.

[0055] It is explicitly noted that the apertures of the first aperture unit 108 and the second aperture unit 109, as well as the through-holes of the first detector 116 and the second detector 117, are exaggerated. The through-holes of the first detector 116 and the second detector 117 have a perpendicular dimension OA ranging from 0.5 mm to 5 mm. For example, they are circular and have a diameter ranging from 1 mm to 3 mm perpendicular to the optical axis OA.

[0056] In the embodiment shown here, the second aperture unit 109 is designed as a pinhole aperture and is provided with a second aperture opening 118 for the passage of the primary electron beam, which has a diameter in the range of 5 µm to 500 µm, for example 35 µm. Alternatively, in a further embodiment, the second aperture unit 109 is provided with several aperture openings that can be mechanically moved relative to the primary electron beam or that can be reached by the primary electron beam using electrical and / or magnetic deflection elements. The second aperture unit 109 is designed as a pressure-stage aperture. This separates a first region in which the electron source 101 is arranged and in which an ultra-high vacuum prevails (10 -7 hPa up to 10 -12 hPa), from a second area which has a high vacuum (10 -3 hPa up to 10 -7hPa). The second area is the intermediate pressure area of ​​the jet guide tube 104, which leads to the sample chamber 120.

[0057] Sample chamber 120 is under vacuum. A pump (not shown) is arranged on sample chamber 120 to generate the vacuum. In the Fig. In the embodiment shown in Figure 1, the sample chamber 120 is operated in a first pressure range or in a second pressure range. The first pressure range includes only pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, the sample chamber 120 is vacuum-sealed.

[0058] The object 114 is arranged on a sample table 122. The sample table 122 is movable in three mutually perpendicular directions, namely in an x-direction, a y-direction, and a z-direction. In addition, the sample table 122 can be rotated about two mutually perpendicular axes of rotation.

[0059] The SEM 100 also features a third detector 121, which is located in the sample chamber 120. More precisely, the third detector 121 is positioned behind the object 114 along the optical axis OA, as seen from the electron source 101. The primary electron beam passes through the object 114 under investigation. As the primary electron beam passes through the object 114, the electrons interact with the material of the object 114. The electrons passing through the object 114 are detected by the third detector 121.

[0060] A component 125 of the SEM 100 is arranged in the sample chamber 120. For example, the component 125 is configured as a gas injection system, a micromanipulator, an additional movable detector, and / or a charge compensation unit. The invention is not limited to the aforementioned components. Rather, any component of the SEM 100 can be used for the invention.

[0061] An imaging device 500, which will be discussed in more detail below, is arranged at the sample chamber 120. The imaging device 500, the first detector 116, the second detector 117, and the chamber detector 119 are connected to a control unit 123, which includes a monitor 124. The third detector 121 is also connected to the control unit 123. This is not shown for clarity. The control unit 123 processes detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, and / or the third detector 121 and displays them as images on the monitor 124. The monitor 124 also displays images generated by the imaging device 500. This will be discussed in more detail below.

[0062] Fig. Figure 2 shows a particle beam device in the form of a combination device 200. The combination device 200 has two particle beam columns. One of these is equipped with the SEM 100, as described in the Fig. Figure 1 already shows this, but without the sample chamber 120. Instead, the SEM 100 is arranged on a sample chamber 201. The sample chamber 201 is under vacuum. A pump (not shown) is arranged on the sample chamber 201 to generate the vacuum. In the Fig. In the embodiment shown in section 2, the sample chamber 201 is operated in a first pressure range or in a second pressure range. The first pressure range includes only pressures less than or equal to 10 -3 hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, sample chamber 201 is vacuum-sealed.

[0063] In the sample chamber 201 a chamber detector 119 is arranged, which is designed, for example, as an Everhart-Thornley detector or an ion detector and which has a metal-coated detection surface that shields light, especially white light.

[0064] The SEM 100 serves to generate a first particle beam, namely the primary electron beam described above. Secondly, the combination device 200 is equipped with an ion beam device 300, which is also arranged at the sample chamber 201.

[0065] The SEM 100 is arranged vertically with respect to the sample chamber 201. In contrast, the ion beam device 300 is arranged at an angle of approximately 50° to the SEM 100. It has a second beam generator in the form of an ion beam generator 301. Ions are generated by the ion beam generator 301, forming a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302, which is at a predetermined potential. The second particle beam then passes through an ion optic of the ion beam device 300, the ion optic comprising a condenser lens 303 and a second objective lens 304. The second objective lens 304 ultimately creates an ion probe that is focused onto the object 114 arranged on a sample stage 122.

[0066] Above the second objective lens 304 (i.e., in the direction of the ion beam generator 301), an adjustable or selectable aperture 306, a first electrode arrangement 307, and a second electrode arrangement 308 are arranged, wherein the first electrode arrangement 307 and the second electrode arrangement 308 are configured as scanning electrodes. The second particle beam is scanned across the surface of the object 114 by means of the first electrode arrangement 307 and the second electrode arrangement 308, with the first electrode arrangement 307 acting in a first direction and the second electrode arrangement 308 acting in a second direction opposite to the first. Thus, scanning is performed, for example, in an x-direction. Scanning in a perpendicular y-direction is achieved by further electrodes (not shown) rotated by 90° on the first electrode arrangement 307 and on the second electrode arrangement 308.

[0067] As explained above, object 114 is positioned on sample table 122. Also in the case of the Fig. In the embodiment shown in Figure 2, the sample table 122 is designed to be movable in three mutually perpendicular directions, namely in an x-direction, a y-direction, and a z-direction. Furthermore, the sample table 122 can be rotated about two mutually perpendicular axes of rotation.

[0068] The one in Fig. The distances shown between the individual units of the combination device 200 are exaggerated to better illustrate the individual units of the combination device 200.

[0069] A component 125 of the combination device 200 is arranged in the sample chamber 201. For example, the component 125 is configured as a gas injection system, a micromanipulator, a further movable detector, and / or a charge compensation unit. The invention is not limited to the aforementioned components. Rather, any component of the combination device 200 can be used for the invention.

[0070] An imaging device 500, which will be discussed in more detail below, is arranged at the sample chamber 201. The imaging device 500 is connected to a control unit 123, which has a monitor 124. The control unit 123 processes detection signals from the first detector 116 and the second detector 117 (in Fig. 2 (not shown), the chamber detector 119 and / or the third detector 121 are generated, and these are displayed as images on the monitor 124. Furthermore, the monitor 124 is used to display images generated by the imaging device 500. This will be discussed in more detail below.

[0071] Fig. Figure 3 is a schematic representation of another embodiment of a particle beam device according to the invention. This embodiment of the particle beam device is designated by reference numeral 400 and includes a mirror corrector for correcting, for example, chromatic and / or spherical aberration. The particle beam device 400 comprises a particle beam column 401, which is designed as an electron beam column and essentially corresponds to an electron beam column of a corrected SEM. However, the particle beam device 400 is not limited to an SEM with a mirror corrector. Rather, the particle beam device can include any type of correction unit.

[0072] The particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403, and an anode 404. For example, the electron source 402 is configured as a thermal field emitter. Electrons emitted from the electron source 402 are accelerated towards the anode 404 due to a potential difference between the electron source 402 and the anode 404. Thus, a particle beam in the form of an electron beam is generated along a first optical axis OA1.

[0073] The particle beam is guided along a beam path corresponding to the first optical axis OA1 after it exits the electron source 402. A first electrostatic lens 405, a second electrostatic lens 406, and a third electrostatic lens 407 are used to guide the particle beam.

[0074] Furthermore, the particle beam is aligned along the beam path using a beam guidance device. The beam guidance device of this embodiment comprises a source alignment unit with two magnetic deflection units 408 arranged along the first optical axis OA1. In addition, the particle beam device 400 includes electrostatic beam deflection units. A first electrostatic beam deflection unit 409, which in another embodiment is also configured as a quadrupole, is arranged between the second electrostatic lens 406 and the third electrostatic lens 407. The first electrostatic beam deflection unit 409 is also arranged downstream of the magnetic deflection units 408. A first multipole unit 409A, in the form of a first magnetic deflection unit, is arranged on one side of the first electrostatic beam deflection unit 409.Furthermore, a second multipole unit 409B, in the form of a second magnetic deflection unit, is arranged on the other side of the first electrostatic beam deflection unit 409. The first electrostatic beam deflection unit 409, the first multipole unit 409A, and the second multipole unit 409B are adjusted to align the particle beam with respect to the axis of the third electrostatic lens 407 and the inlet window of a beam deflection device 410. The first electrostatic beam deflection unit 409, the first multipole unit 409A, and the second multipole unit 409B can act together like a Wien filter. Another magnetic deflection element 432 is arranged at the inlet of the beam deflection device 410.

[0075] The beam deflection device 410 is used as a particle beam deflector, which deflects the particle beam in a specific manner. The beam deflection device 410 comprises several magnetic sectors, namely a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F, and a seventh magnetic sector 411G. The particle beam enters the beam deflection device 410 along the first optical axis OA1 and is deflected by the beam deflection device 410 in the direction of a second optical axis OA2. The beam deflection is achieved by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C by an angle of 30° to 120°.The second optical axis OA2 is aligned at the same angle to the first optical axis OA1. The beam deflection device 410 also deflects the particle beam, which is guided along the second optical axis OA2, in the direction of a third optical axis OA3. The beam deflection is provided by the third magnetic sector 411C, the fourth magnetic sector 411D, and the fifth magnetic sector 411E. In the embodiment shown in . Fig. 3. The deflection to the second optical axis OA2 and to the third optical axis OA3 is provided by deflecting the particle beam at an angle of 90°. Thus, the third optical axis OA3 is coaxial with the first optical axis OA1. However, it should be noted that the particle beam device 400 according to the invention described herein is not limited to deflection angles of 90°. Rather, any suitable deflection angle can be selected by the beam deflection device 410, for example, 70° or 110°, so that the first optical axis OA1 is not coaxial with the third optical axis OA3. For further details of the beam deflection device 410, reference is made to WO 2002 / 067286 A2.

[0076] After the particle beam is deflected by the first magnetic sector 411A, the second magnetic sector 411B, and the third magnetic sector 411C, the particle beam is guided along the second optical axis OA2. The particle beam is guided to an electrostatic mirror 414 and, on its way to the electrostatic mirror 414, passes by a fourth electrostatic lens 415, a third multipole unit 416A in the form of a magnetic deflection unit, a second electrostatic beam deflection unit 416, a third electrostatic beam deflection unit 417, and a fourth multipole unit 416B in the form of a magnetic deflection unit. The electrostatic mirror 414 comprises a first mirror electrode 413A, a second mirror electrode 413B, and a third mirror electrode 413C.Electrons from the particle beam, which are reflected back at the electrostatic mirror 414, travel again along the second optical axis OA2 and re-enter the beam deflection device 410. They are then deflected by the third magnetic sector 411C, the fourth magnetic sector 411D and the fifth magnetic sector 411E to the third optical axis OA3.

[0077] The electrons of the particle beam exit the beam deflection device 410 and are guided along the third optical axis OA3 to the object 425 to be examined. On its way to the object 425, the particle beam passes through a fifth electrostatic lens 418, a beam guide tube 420, a fifth multipole unit 418A, a sixth multipole unit 418B, and an objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is decelerated or accelerated by the fifth electrostatic lens 418 to an electrical potential of the beam guide tube 420.

[0078] The particle beam is focused by the objective lens 421 into a focal plane in which the object 425 is located. The object 425 is arranged on a movable sample stage 424. The movable sample stage 424 is located in a sample chamber 426 of the particle beam instrument 400. The sample stage 424 is movable in three mutually perpendicular directions, namely in an x-direction, a y-direction, and a z-direction. In addition, the sample stage 424 can be rotated about two mutually perpendicular axes of rotation. The sample chamber 426 is under vacuum. A pump (not shown) is arranged on the sample chamber 426 to generate the vacuum. Fig. In the embodiment shown in Figure 3, the sample chamber 426 is operated in a first pressure range or in a second pressure range. The first pressure range includes only pressures less than or equal to 10 -3hPa, and the second pressure range only includes pressures greater than 10 -3 hPa. To ensure these pressure ranges, sample chamber 426 is vacuum-sealed.

[0079] The objective lens 421 can be configured as a combination of a magnetic lens 422 and a sixth electrostatic lens 423. The end of the beam guide tube 420 can also be an electrode of an electrostatic lens. Particles from the particle beam device are decelerated—after exiting the beam guide tube 420—to a potential of the object 425, which is located on the sample stage 424. The objective lens 421 is not limited to a combination of the magnetic lens 422 and the sixth electrostatic lens 423. Rather, the objective lens 421 can assume any suitable form. For example, the objective lens 421 can also be configured as a purely magnetic lens or as a purely electrostatic lens.

[0080] The particle beam, focused onto object 425, interacts with it, generating interaction particles. Specifically, secondary electrons are emitted from object 425, or backscattered electrons are scattered by object 425. The secondary electrons or backscattered electrons are then accelerated and guided into the beam guide tube 420 along the third optical axis OA3. The paths of the secondary electrons and backscattered electrons, in particular, run in the opposite direction to the particle beam.

[0081] The particle beam device 400 comprises a first analysis detector 419, which is arranged along the beam path between the beam deflection device 410 and the objective lens 421. Secondary electrons traveling in directions oriented at a large angle to the third optical axis OA3 are detected by the first analysis detector 419. Backscattered electrons and secondary electrons that have a small axial distance to the third optical axis OA3 at the location of the first analysis detector 419—i.e., backscattered electrons and secondary electrons that are a small distance from the third optical axis OA3 at the location of the first analysis detector 419—enter the beam deflection device 410 and are deflected by the fifth magnetic sector 411E, the sixth magnetic sector 411F, and the seventh magnetic sector 411G along a detection beam path 427 to a second analysis detector 428.The deflection angle is, for example, 90° or 110°.

[0082] The first analysis detector 419 generates detection signals, largely produced by emitted secondary electrons. These signals are fed to a control unit 123 and used to obtain information about the properties of the interaction area between the focused particle beam and the object 425. Specifically, the focused particle beam is scanned across the object 425 using a scanning device 429. The detection signals generated by the first analysis detector 419 then allow an image of the scanned area of ​​the object 425 to be generated and displayed on a display unit. The display unit is, for example, a monitor 124 located at the control unit 123.

[0083] The second analysis detector 428 is also connected to the control unit 123. Detection signals from the second analysis detector 428 are routed to the control unit 123 and used to generate an image of the rasterized area of ​​the object 425 and display it on a display unit. The display unit is, for example, the monitor 124, which is located at the control unit 123.

[0084] A component 125 of the particle beam instrument 400 is arranged in the sample chamber 426. For example, the component 125 is configured as a gas injection system, a micromanipulator, an additional movable detector, and / or a charge compensation unit. The invention is not limited to the aforementioned components. Rather, any component of the particle beam instrument 400 can be used for the invention.

[0085] An imaging device 500, which will be discussed in more detail below, is arranged at the sample chamber 426. The imaging device 500 is connected to the control unit 123, which includes the monitor 124. The control unit 123 processes detection signals from the imaging device 500 and displays them as images on the monitor 124. This will be discussed in more detail below.

[0086] Fig. Figure 4 shows a first embodiment of the imaging device 500, which is arranged, for example, in one of the particle beam devices described above, namely the SEM 100, the combination device 200, and the particle beam device 400. Hereinafter, the SEM 100, the combination device 200, and the particle beam device 400 will collectively be referred to as particle beam devices 100, 200, and 400.

[0087] The imaging device 500 includes a lighting unit 501. The lighting unit 501 illuminates the object 114 or 425 and / or the assembly 125 with illuminating light. In a first switching state of the lighting unit 501, the illuminating light consists exclusively of light from a first spectral range. For example, the illuminating light has only a specific wavelength from the first spectral range. Alternatively, for example, the illuminating light is a superposition of a first light with a first wavelength and a second light with a second wavelength, wherein the first and second wavelengths lie within the first spectral range. In a second switching state of the lighting unit 501, the illuminating light consists exclusively of light from a second spectral range. For example, the illuminating light has only a specific wavelength from the second spectral range.Alternatively, for example, it is provided that the illumination light is a superposition of a third light with a third wavelength and a fourth light with a fourth wavelength, where the third wavelength and the fourth wavelength lie in the second spectral range.

[0088] In one embodiment, for example, the first and second spectral ranges overlap slightly, with one overlap range being, for example, less than 20 nm. In this embodiment, the light of the first spectral range contains less than 10%, less than 5%, or less than 1% of the wavelengths from the overlap range. Furthermore, in this embodiment, the light of the second spectral range contains less than 10%, less than 5%, or less than 1% of the wavelengths from the overlap range. In another embodiment, the first and second spectral ranges are different. In this case, the first and second spectral ranges have no common intersection.

[0089] To generate light of the first spectral range, the illumination unit 501 includes a first luminaire 502. The luminaire 502 is provided with a first filter unit (not shown) configured such that light not belonging to the first spectral range is filtered out of the light generated by the first luminaire 502. Alternatively, the first luminaire 502 can be configured to generate light exclusively from the first spectral range. The first spectral range comprises, for example, the wavelength range from 380 nm to 780 nm, including the range boundaries.

[0090] At the in Fig. In the embodiment of the imaging device 500 shown in Figure 4, the first lighting unit 502 is designed as a white light-emitting LED. For example, this is an LED that operates on the principle of luminescence wavelength conversion. In this principle, the blue radiation components emitted by the LED are used to be partially converted into yellowish light by adding a phosphor. The resulting spectra thus produce white light.

[0091] The illumination unit 501 of the imaging device 500 also includes a second illumination unit 503 for generating light of a second spectral range. The second illumination unit 503 is provided with a second filter unit (not shown) configured such that light not belonging to the second spectral range is filtered out from the light generated by the second illumination unit 503. Alternatively, the second illumination unit 503 can be configured to generate light exclusively from the second spectral range. For example, the second spectral range is in the range from 780 nm to 3 µm, including the range boundaries. The second illumination unit 503 is, for example, configured as an infrared LED that emits light in the near-infrared range. For example, the infrared LED emits infrared light with a wavelength of 950 nm.It is explicitly pointed out that the invention is not limited to this wavelength. Rather, any wavelength suitable for carrying out the invention can be used for the light of the second spectral range.

[0092] As mentioned above, the lighting unit 501 has a first switching state and a second switching state. These switching states are controlled by a control unit 506 of the imaging device 500. In other words, the control unit 506 switches the lighting unit 501 to the first switching state or to the second switching state.

[0093] The imaging device 500 according to the Fig. The 4 unit comprises a camera unit 504. The camera unit 504 is used to capture images of the object 114 or 425 and / or the assembly 125. For this purpose, the camera unit 504 is equipped with a detection unit 505. For example, the detection unit 505 is a CCD or a CMOS sensor. The detection unit 505 has a detector sensitivity. This detector sensitivity is configured for both the light of the first spectral range in the first switching state of the illumination unit 501 and the light of the second spectral range in the second switching state of the illumination unit 501. In other words, the detection unit 505 of the camera unit 504 detects both the light of the first spectral range and the light of the second spectral range.

[0094] Fig. Figure 5 shows a second embodiment of the imaging device 500, which is arranged, for example, in one of the particle beam devices 100, 200 and 400. The second embodiment of the imaging device 500 according to the Fig. 5 is based on the embodiment of the imaging device 500 according to the Fig. 4. Identical components are provided with the same reference numerals. Therefore, reference is made to the explanations given above, which also apply to the second embodiment of the imaging device 500. In contrast to the first embodiment of the imaging device 500 according to the Fig. Figure 4 shows the second embodiment of the imaging device 500 according to the Fig. However, in the second embodiment, a slightly different lighting unit 501 is shown. In this second embodiment as well, the lighting unit 501 is provided for illuminating the object 114 or 425 and / or the assembly 125 with light. In the first switching state of the lighting unit 501, the light emitted consists exclusively of light from the first spectral range. In the second switching state, the light emitted consists exclusively of light from the second spectral range. To generate the light of the first spectral range, the first lighting unit 502 has several LEDs, namely a first LED 502A, a second LED 502B, and a third LED 502C. The first LED 502A emits red light. The second LED 502B emits green light. The third LED 502C emits blue light. By mixing the red, green, and blue light, light is produced that is perceived as white light.

[0095] Fig. Figure 6 shows another embodiment of the lighting unit 501. The embodiment of the lighting unit 501 according to the Fig. 6 is based on the embodiment of the lighting unit 501 according to the Fig. 4. Identical components are marked with the same reference numerals. Reference is therefore made to the explanations given above, which also apply to the embodiment of the lighting unit 501 according to the Fig. 6 apply. In contrast to the embodiment of the lighting unit 501 according to the Fig. Figure 4 shows a further embodiment of the lighting unit 501 according to the Fig. Six numerous first lighting units 502 and second lighting units 503 are arranged alternately and in a ring shape around the lighting unit 501. The first lighting units 502 and the second lighting units 503 have the same functions that have already been explained above.

[0096] Fig. Figure 7 shows yet another embodiment of the lighting unit 501. This further embodiment of the lighting unit 501 according to the Fig. 7 is based on the embodiment of the lighting unit 501 according to the Fig. 5. Identical components are marked with the same reference numerals. Reference is made to the explanations given above, which also apply to the further embodiment of the lighting unit 501 according to the Fig. 7 apply. In contrast to the embodiment of the lighting unit 501 according to the Fig. Figure 5 shows a further embodiment of the lighting unit 501 according to the Fig. Figure 7 shows numerous first lighting units 502 and second lighting units 503, arranged alternately and in a ring shape on the lighting unit 501. Each of the lighting units 502 has several LEDs, namely a first LED 502A, a second LED 502B, and a third LED 502C. The first LED 502A, the second LED 502B, the third LED 502C, and the second lighting unit 503 have the same functions that have already been explained above. These also apply to this embodiment.

[0097] The exemplary implementations according to the Fig. 6 and Fig. The advantages of the first lighting units 502 and the second lighting units 503 are that they can be controlled in such a way as to illuminate sectors within the sample chambers 120, 201, or 426. In other words, the direction of emission of the light from the first spectral range and the light from the second spectral range is freely selectable. This can reduce reflections within the sample chambers 120, 201, or 426 that might impair the operation of the detectors 116, 117, 121, 419, or 428.

[0098] Fig. Figure 8 shows a procedure for operating the particle beam devices 100, 200, and 400 described above. In a process step S1, the illumination unit 501 is switched to its first switching state together with the control unit 506. In this first switching state, the illumination unit 501 generates only light of the first spectral range in the form of white light. In a process step S2, the object 114 or 425 and / or the assembly unit 125 are illuminated with light of the first spectral range. In a process step S3, a color image or several color images are then captured using the camera unit 504 and displayed on the monitor 124.

[0099] In process step S4, it is checked whether further image acquisition and the generation of color images are possible. Further image acquisition and the generation of color images may be possible in several cases. For example, they are possible if object 114 or 425 is not imaged with a particle beam from particle beam instrument 100, 200, or 400. In this case, illuminating object 114 or 425 and / or component 125 with light from the first spectral range in the form of white light is readily possible, since detectors 116, 117, 121, 419, and 428 of particle beam instruments 100, 200, and 400 are not used. Therefore, no interference with detectors 116, 117, 121, 419, and 428 of particle beam instruments 100, 200, and 400 can occur in this case.Further image acquisition and the generation of color images are also possible if detectors 116, 117, 119, 121, 419, and 428 of particle beam instruments 100, 200, and 400 are not sensitive to light in the first spectral range or are not operating. If they are not sensitive, simultaneous acquisition of color images with the imaging device 500 and imaging of object 114 or 425 using the particle beam incident on object 114 or 425 and detectors 116, 117, 119, 121, 419, and 428 of particle beam instruments 100, 200, and 400 is possible. Further recording and the generation of color images are also possible, in particular, if the detectors in the particle beam devices 100, 200 and 400 are arranged in such a way that no or very little light of the first spectral range can fall on these detectors.For example, these are the second detector 117 of the SEM 100 or the second analysis detector 428 of the particle beam instrument 400.

[0100] Additionally, in process step S4, it can be checked whether further recording and the generation of color images are desired, but are not possible due to potential interference with detectors 116, 117, 119, 121, 419, and 428 by light from the first spectral range. In this case, it is provided, for example, that detectors 116, 117, 119, 121, 419, and 428 are switched off in the first switching state. Alternatively, or in addition, it is provided that detectors 116, 117, 119, 121, 419, and 428 are moved into a position such that no light from the first spectral range reaches detectors 116, 117, 119, 121, 419, and 428 in the first switching state. Additionally or alternatively, it is provided that the detectors 116, 117, 119, 121, 419 and 428 are moved into a position such that in the first switching state only a minimal intensity of the light of the first spectral range hits the detectors 116, 117, 119, 121, 419 and 428.In all the aforementioned cases, it is then possible to continue to generate color images of object 114 or 425 and / or the construction unit 125 using light from the first spectral range.

[0101] If further color image acquisition is possible, process step S3 is repeated. However, if process step S4 determines that further color image acquisition is not possible—for example, because simultaneous imaging of object 114 or 425 with the particle beam of particle beam devices 100, 200, and 400 is not possible and / or because detectors 116, 117, 119, 121, 419, and 428 of particle beam devices 100, 200, and 400 are disturbed by light from the first spectral range—then, in process step S5, control unit 506 switches the illumination unit 501 to its second switching state. In this second switching state, object 114 or 425 and / or assembly unit 125 are illuminated with light from the second spectral range (process step S6). As mentioned above, the light from the second spectral range is infrared light.The camera unit 504 now takes black and white pictures of the object 114 or 425 and / or the construction unit 125 (process step S7) and displays them on the monitor 124.

[0102] Fig. Figure 9 shows a further process step S2A, which in a further embodiment of the process according to the Fig. 8 is carried out between process steps S2 and S3. In process step S2A, the intensity of the light in the first spectral range is set and regulated by the control unit 506. Fig. Figure 10 shows a further process step S6A, which in yet another embodiment of the process according to the Fig. 8 between process steps S6 and S7. In process step S6A, the intensity of the light in the second spectral range is set and controlled by the control unit 506. The exemplary embodiments of the Fig. 9 and Fig.10 ensure that interfering influences on a detector, for example the detectors 116, 117, 119, 121, 419 and 428, are reduced to a minimum and at the same time ensure good imaging of the object 114 or 425 and / or the assembly 125 with the imaging device 500.

[0103] The invention ensures that imaging of the object 114 or 425 and / or the assembly 125 with the camera unit 504 is possible in every operating state of the particle beam device 100, 200, or 400. For example, the acquisition of color images with the camera unit 504 is ensured until simultaneous acquisition of color images and imaging of the object 114 or 425 with the particle beam of the particle beam device 100, 200, or 400 are no longer possible. Color-coded or specially designed objects are also clearly recognizable by means of the generated color images. If, for example, simultaneous acquisition of color images and imaging of the object 114 or 425 or the assembly 125 with the particle beam of the particle beam device 100, 200, or 400 are no longer possible, the control unit 506 switches the illumination unit 501 to the second switching state.In the second switching state, light from the second spectral range, namely infrared light, is used to illuminate and image object 114 or 425 and / or component 125. Black-and-white images of object 114 or 425 and / or component 125 are then generated. The light from the second spectral range is designed such that simultaneous image acquisition of object 114 or 425 and / or component 125 with camera unit 504 and imaging of object 114 or 425 by detecting interaction particles with detectors 116, 117, 119, 121, 419, and 428 is possible. This also ensures that the object 114 or 425 and / or the assembly unit 125 can always be observed in every operating state of the particle beam device 100, 200 or 400, and that, for example, the position of the object 114 or 425 can be controlled and adjusted using the sample table 122 and 424 and / or the position of the assembly unit 125.

[0104] In a particle beam instrument with an imaging device according to the invention, the first spectral range can comprise the entire visible spectrum with the entire wavelength range from 400 nm to 700 nm or a substantial portion of the visible spectrum, at least with the wavelength range from 450 nm to 650 nm. The second spectral range can then be selected such that at least one detector arranged in the sample chamber of the particle beam instrument or in the beam tube near the sample chamber of the particle beam instrument, which serves to detect interaction products of the particle beam with the object, is sensitive to light in the first spectral range but insensitive to light in the second spectral range.If several detectors for detecting interaction products of the particle beam with the object are arranged in or near the sample chamber in the beam tube of the particle beam instrument, then all these detectors should be insensitive to light in the second spectral range. The control unit can be designed such that it preferably operates the illumination unit of the imaging device in the first switching state, in which the illumination light has a component in the first spectral range, and switches the illumination unit to the second switching state only when at least one detector, arranged in or near the sample chamber in the beam tube of the particle beam instrument, which serves to detect interaction products of the particle beam with the object and which is sensitive to light in the first spectral range, is in operation.In this way, the imaging device can preferably produce and provide color images of the interior of the sample chamber, except precisely in those cases where the acquisition of color images would lead to interfering detection signals; but even when detectors are operated that are sensitive to the illumination light required for the acquisition of color images, black and white images of the interior of the sample chamber can still be provided.

[0105] In a further embodiment, the control unit of the imaging device can have a third switching state in which the illumination unit is completely switched off, i.e., no illumination light is provided by the illumination unit at all. This third switching state is set by the control unit if and only if all detectors located in or near the sample chamber in the beam tube of the particle beam device and operating for the detection of interaction products of the particle beam with the object are sensitive to at least either light in the first spectral range or light in the second spectral range, or if the user sets this third switching state manually.In this third switching state, the imaging device cannot provide images of the interior of the sample chamber, but it is ensured that the image signals obtained with the detectors are not disturbed by illumination light from the imaging device.

[0106] The features of the invention disclosed in this description, in the drawings, and in the claims can be essential for realizing the invention in its various embodiments, both individually and in any combination. The invention is not limited to the described embodiments. It can be varied within the scope of the claims and taking into account the knowledge of the person skilled in the art. Reference symbol list 100 SEM 101 Electron source 102 Extraction electrode 103 Anode 104 Beam guide tube 105 first condenser lens 106 second condenser lens 107 first objective lens 108 first aperture unit 108A first aperture 109 second aperture unit 110 pole shoes 111 coils 112 individual electrodes 113 Pipe electrode 114 objects 115 Grid system 116 first detector 116A Counterfield grid 117 second detector 118 second aperture 119 Chamber detector 120 sample chamber 121 third detector 122 Sample table 123 Control unit 124 Monitor 125 building units 200 combination device 201 Sample chamber 300 ion beam device 301 Ion Beam Generators 302 Extraction electrode in the ion beam device 303 Condenser lens 304 second lens 306 adjustable or selectable aperture 307 first electrode arrangement 308 second electrode arrangement 400 particle beam device with corrector unit 401 Particle beam column 402 Electron source 403 Extraction electrode 404 Anode 405 first electrostatic lens 406 second electrostatic lens 407 third electrostatic lens 408 magnetic deflection unit 409 first electrostatic beam deflection unit 409A first multipole unit 409B second multipole unit 410 Beam deflection device 411A first magnetic sector 411B second magnetic sector 411C third magnetic sector 411D fourth magnetic sector 411E fifth magnetic sector 411F sixth magnetic sector 411G seventh magnetic sector 413A first mirror electrode 413B second mirror electrode 413C third mirror electrode 414 electrostatic mirror 415 fourth electrostatic lens 416 second electrostatic beam deflection unit 416A third multipole unit 416B fourth multipole unit 417 third electrostatic beam deflection unit 418 fifth electrostatic lens 418A fifth multipole unit 418B sixth multipole unit 419 first analysis detector 420 Beam guide tube 421 Lens 422 magnetic lens 423 sixth electrostatic lens 424 Sample table 425 object 426 Sample chamber 427 Detection beam path 428 second analysis detector 429 Grid system 432 additional magnetic deflection element 500 imaging device 501 Lighting unit 502 first light unit (LED) 502A first LED 502B second LED 502C third LED 503 second light unit (LED) 504 camera unit 505 Detection unit 506 Control unit OA optical axis OA1 first optical axis OA2 second optical axis OA3 third optical axis S1 to S7 process steps

Claims

[1] Particle beam device (100, 200, 400) for the analysis and / or processing of an object (114, 425), with - at least one beam generator (101, 301, 402) for generating a particle beam with charged primary particles, - at least one objective lens (107, 304, 421) for focusing the particle beam onto the object (114, 425), wherein interaction particles and / or interaction radiation are produced when the particle beam interacts with the object (114, 425), - at least one detector (116, 117, 119, 121, 419, 428) for detecting the interaction particles and / or interaction radiation, and with - at least one imaging device (500) for imaging the object (114, 425) and / or for imaging a component (125) of the particle beam device (100, 200, 400), with ▪ at least one lighting unit (501) having a first switching state and a second switching state for illuminating the object (114, 425) and / or for illuminating the assembly (125) with illuminating light, wherein in the first switching state the illuminating light consists exclusively of light from a first spectral range and wherein in the second switching state the illuminating light consists exclusively of light from a second spectral range, ▪ at least one control unit (506) for switching the illumination unit (501) into the first switching state or into the second switching state, wherein the control unit (506) switches the illumination unit (501) into the first switching state so that the light of the first spectral range is directed onto the object (114, 425) and / or the assembly (125) when (i) imaging or examination of the object (114, 425) with the particle beam of the particle beam device (100, 200, 400) is not taking place or when the detector (116, 117, 119, 121, 419, 428) (ii) is not sensitive to the light of the first spectral range, (iii) cannot detect the light of the first spectral range due to its arrangement in the particle beam device (100, 200, 400), or (iv) is switched off, and with ▪ at least one camera unit (504) for imaging the object (114, 425) and / or for imaging the assembly unit (125) with light of the first spectral range in the first switching state of the illumination unit (501) or with light of the second spectral range in the second switching state of the illumination unit (501). [2] Particle beam device (100, 200, 400) according to claim 1, wherein the imaging device (500) has at least one of the following features: (i) the first spectral range consists exclusively of the wavelength range of visible light; (ii) the first spectral range contains exclusively light with a wavelength range of 380 nm to 780 nm; (iii) the first spectral range consists exclusively of white light. [3] Particle beam device (100, 200, 400) according to claim 1 or 2, wherein the imaging device (500) has at least one of the following features: (i) the second spectral range consists exclusively of the wavelength range of infrared light; (ii) the second spectral range consists exclusively of the wavelength range of near-infrared light; (iii) the second spectral range contains only light with a wavelength range from 780 nm to 3.0 µm. [4] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the imaging device (500) has at least one of the following features: (i) at least one first luminaire unit (502, 502A, 502B, 502C) for generating the light of the first spectral range; (ii) at least one first luminaire unit (502, 502A, 502B, 502C) for generating the light of the first spectral range, wherein the first luminaire unit (502, 502A, 502B, 502C) comprises a first filter unit; (iii) at least one first luminaire unit (502, 502A, 502B, 502C) for generating the light of the first spectral range, wherein the first luminaire unit (502, 502A, 502B, 502C) comprises at least one LED; (iv) at least one first illuminating unit (502, 502A, 502B, 502C) for generating the light of the first spectral range, wherein the first illuminating unit (502) comprises at least one first LED (502A) and / or at least one second LED (502B) and / or at least one third LED (502C); (v) at least one second luminaire unit (503) for generating the light of the second spectral range; (vi) at least a second illuminating unit (503) for generating the light of the second spectral range, wherein the second illuminating unit (503) comprises a second filter unit; (vii) at least one second illuminating unit (503) for generating the light of the second spectral range, wherein the illuminating unit (503) comprises at least one LED. [5] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein - the camera unit (504) has at least one detection unit (505) with a detector sensitivity, and wherein - the detector sensitivity is configured for both the light of the first spectral range in the first switching state of the lighting unit (501) and for the light of the second spectral range in the second switching state of the lighting unit (501). [6] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the camera unit (504) comprises at least one CCD or one CMOS. [7] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the control unit (506) is designed as an intensity control unit for adjusting and / or controlling the intensity of the light of the first spectral range and / or the light of the second spectral range. [8] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein - the particle beam device (100, 200, 400) has a sample chamber (120, 201, 426), and wherein - the imaging device (500) is arranged on the sample chamber (120, 201, 426) and / or in the sample chamber (120, 201, 426). [9] Particle beam device (400) according to one of the preceding claims, wherein the particle beam device (400) has at least one mirror corrector (414) for correcting chromatic and / or spherical aberration. [10] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the particle beam device (100, 200, 400) is designed as an electron beam device and / or as an ion beam device. [11] Particle beam device (200) according to one of the preceding claims, wherein the beam generator (101) for generating a particle beam with charged primary particles is configured as a first beam generator for generating a first particle beam with first charged primary particles and the objective lens (107) is configured as a first objective lens for focusing the first particle beam, and wherein the particle beam device (200) further comprises: - at least one second beam generator (301) for generating a second particle beam with second charged primary particles, and - at least one second objective lens (304) for focusing the second particle beam onto the object (114). [12] Particle beam device (100, 200, 400) according to one of the preceding claims, wherein the assembly (125) of the particle beam device (100, 200, 400) is configured as a gas injection system, as a micromanipulator, as a movable detector and / or as a charge compensation unit. [13] Particle beam device (100, 200, 400) according to claim 8, wherein the assembly (125) of the particle beam device (100, 200, 400) is arranged in the sample chamber (120, 201, 426). [14] Method for operating a particle beam device (100, 200, 400) according to one of the preceding claims, wherein - the control unit (506) switches the lighting unit (501) into the first switching state or into the second switching state, and wherein - in the first switching state the object (114, 425) and / or the assembly (125) is imaged by means of the camera unit (504) with the light of the first spectral range and in the second switching state the object (114, 425) and / or the assembly (125) is imaged by means of the camera unit (504) with the light of the second spectral range. [15] Method according to claim 14, wherein in the first switching state the particle beam is directed away from the object (114, 425) or switched off. [16] Method according to claim 14 or 15, wherein the intensity of the light of the first spectral range and / or the intensity of the light of the second spectral range is set / adjusted with the control unit (506). [17] Method according to any one of claims 14 to 16, comprising at least one of the following steps: - Switching off the detector (116, 117, 119, 121, 419, 428) in the first switching state; - Moving the detector (116, 117, 119, 121, 419, 428) into a position such that in the first switching state no light of the first spectral range hits the detector (116, 117, 119, 121, 419, 428); - Moving the detector (116, 117, 119, 121, 419, 428) into a position such that in the first switching state only a minimal intensity of the light of the first spectral range hits the detector (116, 117, 119, 121, 419, 428).

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