Method for operating particle beam device, computer program product and particle beam device

Abstract

The invention relates to a method for operating a particle beam device for imaging, processing and / or analyzing an object, and to a computer program product and to a particle beam device for carrying out the method. The method comprises the steps of: providing control data for a relative positioning of a particle beam of the particle beam apparatus with respect to the object, the control data comprising information on a magnification value and on a velocity value; transforming the provided control data into actuation data for actuating the movable object vehicle or actuating the deflection device to deflect the particle beam, the actuation data comprising information about magnification values and about actuation speed values; a relative movement of the object and the field of view of the particle beam device relative to each other is performed using the actuation data.

Description

TECHNICAL FIELD

[0001] The present application relates to a method of operating a particle beam apparatus for imaging, processing and / or analyzing an object and to a computer program product and a particle beam apparatus for carrying out the method. For example, the particle beam apparatus is embodied as an electron beam apparatus and / or an ion beam apparatus. BACKGROUND

[0002] Electron beam apparatuses, in particular scanning electron microscopes (hereinafter also referred to as SEM) and / or transmission electron microscopes (hereinafter also referred to as TEM), are used for inspecting objects (samples) in order to gain an understanding of the properties and behavior under certain conditions.

[0003] In a SEM, an electron beam (hereinafter also referred to as primary electron beam) is generated by means of a beam generator and focused by means of a beam guiding system on an object to be inspected. The primary electron beam is guided in a raster scan manner over the surface of the object to be inspected by means of deflection devices. In the process, the electrons of the primary electron beam interact with the object to be inspected. As a result of the interaction, in particular, electrons are emitted by the object (so-called secondary electrons) and electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for generating an image. Thus, an image representation of the object to be inspected is obtained. Furthermore, interaction radiation, for example x-ray radiation and / or cathodoluminescence, is generated as a result of the interaction. In particular, the interaction radiation is used for analyzing the object.

[0004] In the case of a TEM, a primary electron beam is likewise generated by means of a beam generator and focused by means of a beam guiding system on an object to be inspected. The primary electron beam radiates through the object to be inspected. When the primary electron beam passes through the object to be inspected, the electrons of the primary electron beam interact with the material of the object to be inspected. The electrons passing through the object to be inspected are imaged by means of a system consisting of an objective and a projection unit on a fluorescent screen or a detector, for example a camera. Here, imaging can also be carried out in a scanning mode of the TEM. Usually, such a TEM is referred to as STEM. Additionally, it can be provided that further detectors are used to detect electrons backscattered at the object to be inspected and / or secondary electrons emitted by the object to be inspected in order to image the object to be inspected.

[0005] Furthermore, the prior art discloses the use of a combination device for inspecting an object, wherein both electrons and ions can be directed onto the object to be inspected. For example, it is known to equip a SEM additionally with an ion beam column. An ion beam generator arranged in the ion beam column is used to generate ions for preparing the object, for example to ablate material from the object or to apply material to the object, or for imaging. The SEM is used here in particular for observing the preparation, but also for further inspection of the prepared or unprepared object.

[0006] The prior art discloses a particle beam device provided with a sample stage on which an object to be inspected and / or to be processed is arranged. The sample stage is movable, a movable embodiment of the sample stage being ensured by a plurality of movement elements for assembling into the sample stage. These movement elements enable the sample stage to be moved in at least one particular direction. In particular, sample stages are known which have a plurality of translational movement elements, for example approximately 3 to 4 translational movement elements, and a plurality of rotational movement elements, for example 2 to 3 rotational movement elements. By way of example, the sample stage is arranged to be movable along a first translational axis, for example an x-axis, along a second translational axis, for example a y-axis, and along a third translational axis, for example a z-axis. The first translational axis, the second translational axis and the third translational axis are oriented perpendicular to one another. Furthermore, the sample stage is rotatable about a first rotational axis and about a second rotational axis perpendicular to the first rotational axis.

[0007] For example, the driving force for the movement by means of the movement elements is provided by a stepper motor in the prior art. A corresponding stepper motor is provided for the respective movement along one of the translational axes or for the rotation about one of the rotational axes. The stepper motor can be arranged in the vacuum chamber of the particle beam device or outside the vacuum chamber of the particle beam device. In the latter case, a corresponding vacuum bushing and a mechanical device are provided in order to ensure the actuation between the stepper motor and the sample stage.

[0008] The stepper motor known in the prior art has the following basic setup. The stepper motor is provided with a rotor which is arranged rotatably in the stepper motor. Furthermore, the stepper motor comprises a coil which is arranged about the rotor. The coil provides a controlled, progressive electromagnetic field by means of which the rotor can be rotated by a minimum angle or by a multiple of this minimum angle. This makes it possible for the rotor to take a certain number of steps per revolution. The prior art discloses stepper motors in which a different number of steps per revolution of the rotor is produced, for example 100 steps per revolution. In the case of a stepper motor in which 100 steps per revolution of the rotor are produced, the rotor rotates by 3.6 degrees per completed whole step.

[0009] In addition to the operation of the stepper motor performing a plurality of whole steps, in the case of known stepper motors, so-called microstep operations are also possible. In a microstep operation, a step smaller than a whole step is provided. For this purpose, the step angle is reduced. This is provided by selectively actuating the motor current for the coils used in the stepper motor. Switching on or off the motor current at the individual coils of the stepper motor results in a staircase-like overall control current curve, which is provided by the ratio of the amplitudes of the motor currents applied to the individual coils. Thus, the stepper motor is actuated by selectively actuating the motor current for the individual coils used in the stepper motor. A whole step or a smaller step (e.g. a half step, an eighth step, or a smaller step) can be obtained by selectively phase-shifting the actuation of the motor current for the individual coils of the stepper motor. The amplitude of the first motor current applied to the first coil of the stepper motor and the amplitude of the second motor current applied to the second coil of the stepper motor do not depend on the step size (i.e. e.g. a whole step, a half step, or a certain other step), and thus remain constant for each selected step size.

[0010] In the case of a particle beam device, it is desirable that the observation region imaged by the particle beam device can be adjusted as precisely as possible. Thus, the accuracy and the resolution of the positioning of the observation region should be rather high, in particular at high magnification values of the particle beam device.

[0011] For example, it is also desirable to perform a uniform movement of the observation region relative to an object (sample) arranged on the sample stage at high magnification values of the particle beam device. A uniform movement of the observation region relative to the object arranged on the sample stage is particularly desirable for a good resolution or accurate imaging of the object.

[0012] The prior art discloses that the positioning of the sample stage (in the following also referred to as the position adjustment of the sample stage) is performed as precisely as possible in order to achieve an accurate adjustment of the observation region. If a stepper motor is used for this purpose for a step operation or a microstep operation, problems can arise during the position adjustment of the sample stage. During the position adjustment of the sample stage, only a limited degree of repeatability can be achieved. Furthermore, the uniformity of the slow movement of the sample stage operated in this way is limited.

[0013] This limitation becomes apparent when the stepper motor is stopped. For stopping, the rotor of the stepper motor is decelerated. This means that, when the sample stage is decelerated (and accordingly also when the sample stage is stopped), the frequency of the motor current for actuating the individual coils is reduced to zero. The frequency of the motor current of the stepper motor is a measure for the speed of the stepper motor and thus also for the speed of the sample stage. When the stepper motor is stopped, the rotor remains in a predefinable position which is predefined by one of the microsteps. In this position, the value assumed by the motor current is predefined by the operating amplitude and the operating phase of the motor current of the stepper motor which are required at this motor position. The operating amplitude is static. This can lead to an excessive thermal load on the stepper motor which is undesirable. For this reason, the prior art provides for reducing the amplitude of the motor current to a predefinable holding amplitude after stopping. The motor current with this holding amplitude is also referred to as holding current. With the holding current, the heating of the components is acceptable.

[0014] The drive force for the movement by means of the movement element can additionally or alternatively be provided by a positioning system, wherein the positioning system comprises at least one piezoelectric drive, at least one linear motor and / or at least one system with a measuring system. The system with a measuring system is embodied, for example, as a system for moving and for positioning the sample stage, wherein a measurement of the movement of the sample stage and of the position adjustment of the sample stage can be implemented by means of the system with a measuring system. From the measurement results of the position adjustment of the sample stage, a further movement of the sample stage and a further measurement of the position adjustment of the sample stage can be implemented.

[0015] The positioning systems known from the prior art have some limitations which are caused by the minimum possible step size during the movement of the sample stage and / or by the measurement resolution during the measurement of the position adjustment of the sample stage. Thus, during the position adjustment of the sample stage, only a limited degree of repeatability can be achieved. Furthermore, the uniformity of the slow movement of the sample stage operated in this way is limited. Furthermore, effects such as the stick-slip effect limit the accuracy and the resolution of the position adjustment of the sample stage. The stick-slip effect is understood to mean the stick-slip of one object relative to another object, wherein the stick-slip occurs when the static friction value of the first object relative to the second object significantly exceeds the sliding friction value of the first object relative to the second object.

[0016] With regard to the prior art, reference is made to DE 10 2009 028 600 A1, DE 10 2010 020 550 A1 and DE 102 012 205 317 A1.

[0017] When the sample stage is moved by means of the moving elements, jumps can occur. For example, jumps can occur when the motor current is switched to the holding current, or when the motor current is switched from the holding current to another current. Furthermore, jumps when changing the drive mode used by the moving elements of the sample stage, the limited size of the smallest achievable step size in the actuation of the sample stage, and / or the limited resolution of the measurement system used are possible limitations that can lead to inaccurate positioning of the sample stage.

[0018] In addition, the movement of the sample stage causes a temperature change of the sample stage and / or a temperature change of components arranged on the sample stage. The temperature change can lead to thermal differences between mutually adjacent components. These can lead to, for example, thermal drift and / or stress. SUMMARY

[0019] It is desirable that the observation area of the particle beam device, i.e. the area of the object and / or assembly that is imaged, i.e. observed and / or processed, with the particle beam, can be adjusted as accurately as possible in order to always achieve a good image of the object, i.e. the observation area, even in the case of high magnification and / or slow movement of the observation area relative to the object. The problem addressed by the present invention is to specify a method, a computer program product and a particle beam device that make the aforementioned possible.

[0020] This problem is solved by a method for operating a particle beam device for imaging, processing and / or analyzing an object having the features of claim 1. The features of claim 5 give a computer program product comprising a program code arranged for executing the corresponding method. According to claim 6, the invention also relates to a particle beam device comprising a processor unit into which a computer program product can be loaded or is loaded, which computer program product executes the corresponding method.

[0021] The method according to the application serves for operating a particle beam device for imaging, processing and / or analyzing an object. The particle beam device comprises at least one beam generator for generating a particle beam comprising charged particles. For example, the charged particles are electrons or ions. Furthermore, the particle beam device comprises at least one detector for detecting interaction particles and / or interaction radiation. Interaction particles and / or interaction radiation are emitted by an interaction of the particle beam with the object when the particle beam is incident on the object. As a result of the interaction, in particular, electrons are emitted by the object (so-called secondary electrons), and electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for image generation. Thus, an image representation of the object to be examined is obtained. Furthermore, interaction radiation (for example, x-ray radiation or cathodoluminescence) is generated during the interaction, and this interaction radiation is detected by means of the detector and subsequently evaluated in order to analyze the object. Furthermore, the particle beam device comprises at least one movable object carrier for moving the object. The movable object carrier can be designed to perform at least one translational movement and / or to perform at least one pivotal movement. With regard to the translational movement and / or the pivotal movement, reference is made to the further explanations below. Furthermore, the particle beam device comprises at least one deflection device for deflecting the particle beam. For example, the deflection device is embodied as a device having electrostatic and / or magnetic deflection elements. For example, the deflection device is embodied as a scanning device. Additionally or alternatively, the deflection device can be embodied as an objective. Furthermore, the particle beam device comprises at least one control unit for receiving control data, for actuating the movable object carrier and / or for actuating the deflection device. Furthermore, the particle beam device comprises at least one display unit for presenting data. Furthermore, the particle beam device comprises at least one storage unit for storing data. Furthermore, the particle beam device comprises a processor unit, which is loaded with a computer program product having the features already further mentioned above or the features further mentioned below.

[0022] The method comprises the method steps explained below.

[0023] The object can represent any element arranged in a sample chamber of the particle beam device. In other words, any element arranged in a sample chamber of the particle beam device can be embodied as an object.

[0024] The first method step involves providing control data for the relative positioning of a particle beam of a particle beam device relative to an object. The provision of the control data is achieved by (a) retrieving the control data from a storage unit into a control unit of the particle beam device and / or (b) entering the control data into the control unit of the particle beam device by a user of the particle beam device. The control data comprises information about a magnification value and information about a velocity value. The magnification value describes a ratio between a real size of the object and a representation size of the object on a display unit. The velocity value describes a change per unit of time of a position of the object relative to an optical axis of the particle beam device. In other words, the velocity value indicates a velocity of the object relative to the optical axis of the particle beam device.

[0025] The second method step involves transforming the provided control data into actuation data. The actuation data is used for actuating the movable object carrier or for actuating a deflection device to deflect the particle beam of the particle beam device using the control unit. The transformation is performed using values about (a) a current orientation of the object, (b) a current scanning direction of the particle beam of the particle beam device on the object, (c) a current velocity of the object and / or (d) the velocity value from the control data. The actuation data comprises information about the magnification value and about an actuation velocity value. In this case, the actuation velocity value describes an actual velocity of the movable object carrier during a movement of the movable object carrier from a current position to a position which can be predefined by the control data. In other words, the provided control data is transformed into actuation data using the control unit such that the movable object carrier can be actuated and / or the deflection device can be actuated to deflect the particle beam of the particle beam device. For example, the provided control data can be related to a movement direction of the movable object carrier and / or a movement direction of the deflection device for deflecting the particle beam of the particle beam device, wherein an associated movement of the movable object carrier along the movement direction and / or a deflection of the particle beam of the particle beam device along the movement direction caused by the deflection device cannot be performed directly by an operation of a single actuation unit. This will be explained in detail below.

[0026] For example, the single actuation unit of the movable object carrier is a single stepper motor. In other words, the provided control data can relate to a movement direction of the movable object carrier, wherein the associated movement of the movable object carrier along the movement direction cannot be performed directly by operation of the single stepper motor. For example, the provided control data can relate to a movement direction of the movable object carrier, wherein the associated movement of the movable object carrier along the movement direction is performed or can be performed by a combination of operation of at least two drives, e.g. stepper motors. Further, the single actuation unit of the deflection device is for example a single electrostatic deflection element and / or a single magnetic deflection element. In other words, the provided control data can relate to a movement direction of the deflection device, wherein the associated movement along the movement direction, here a deflection of the particle beam caused by the deflection device, cannot be performed directly by operation of the single electrostatic deflection element and / or the single magnetic deflection element. For example, the provided control data can relate to a movement direction of the deflection device, wherein the associated movement along the movement direction, here a deflection of the particle beam caused by the deflection device, is performed or can be performed by a combination of operation of at least two electrostatic deflection elements and / or magnetic deflection elements. The transformation makes it possible to implement a movement of the movable object carrier along a further movement direction of the movable object carrier and / or a deflection of the particle beam of the particle beam device caused by the deflection device along a further movement direction of the movable object carrier and / or a deflection of the particle beam of the particle beam device caused by the deflection device such that a movement of the movable object carrier along a movement direction which cannot be actuated directly and / or a deflection of the particle beam of the particle beam device caused by the deflection device along a movement direction which cannot be actuated directly is performed. The transformation of the provided control data into actuation data can for example be performed using a processor unit.

[0027] For example, the deflection device mentioned above is implemented as a device having electrostatic and / or magnetic deflection elements.

[0028] In particular, the offset of the particle beam relative to the optical axis of the particle beam device is adjusted by the deflection device. For example, the offset is adjusted in the x-axis direction, in the y-axis direction and / or in the z-axis direction.

[0029] In particular, a scanning device is used as the deflection device, wherein the deflection of the particle beam in a plane perpendicular to the beam column of the particle beam device is changed by actuating the scanning device. For example, the scanning device is designed such that the particle beam can be directed in a targeted manner to a region on the surface of the object. For example, the scanning device is designed such that a scanning process is performed. In an exemplary scanning process, the particle beam is directed to a region within a sample chamber. In particular, in an exemplary scanning process, the particle beam is directed to the object and over the object. In particular, during an exemplary scanning process, the particle beam is directed to any desired number of sites in a region on the surface of the object.

[0030] In particular, additionally or alternatively, an objective of a particle beam device is used as a deflection device.

[0031] The third method step involves using the actuation data to perform a relative movement with respect to the object and the field of view of the particle beam device, i.e. a relative movement of the object and / or the field of view with respect to each other, which will be explained in further more detail below. In other words, the relative movement of the object and the field of view of the particle beam device with respect to each other can be performed, for example, by moving the object without moving the field of view of the particle beam device. Additionally or alternatively, the relative movement of the object and the field of view of the particle beam device with respect to each other can be performed, for example, by moving the field of view of the particle beam device without moving the object. Furthermore, additionally or alternatively, in order to perform the relative movement of the object and the field of view of the particle beam device with respect to each other, for example, both a movement of the object and a movement of the field of view of the particle beam device can be implemented, in which case the movement of the object must not be identical in time and space to the movement of the field of view of the particle beam device in order to achieve the relative movement of the object and the field of view of the particle beam device with respect to each other. The movement of the object is achieved, for example, by using a movable object carrier. The movement of the field of view of the particle beam device is achieved, for example, by using a deflection device, such that a deflection of the particle beam of the particle beam device caused by the deflection device is achieved, such that the field of view of the particle beam device is moved. The field of view comprises the region of the scanning process. In other words, the field of view particularly represents a region comprising the region of the scanning process. The region of the scanning process is captured, for example, by scanning the particle beam. The field of view can encompass a region which is larger than the region of the scanning process. The relative movement is achieved by:

[0032] - adapting the position of the object using a movable object carrier

[0033] or

[0034] - adapting the deflection of the particle beam of the particle beam device using a deflection device.

[0035] In other words, the relative movement can be performed by moving the object carrier together with the object arranged on the object carrier or by adapting the beam path of the particle beam of the particle beam device.

[0036] The relative movement is achieved by adapting the position of the object using a movable object carrier in the following cases:

[0037] - the magnification value is smaller than a predefinable magnification threshold value,

[0038] - the magnification value is identical to a predefinable magnification threshold value,

[0039] - the actuation speed value is greater than a predefinable speed threshold value

[0040] and / or

[0041] - the actuation speed value is the same as a predefinable speed threshold value.

[0042] In the following cases, the relative movement is to be achieved by adapting the deflection of the particle beam of the particle beam device using the deflection device:

[0043] - the magnification value exceeds a predefinable magnification threshold value

[0044] and

[0045] - the actuation speed value falls below a predefinable speed threshold value.

[0046] In other words, the magnification value and the actuation speed value determine the manner in which the relative movement is to be performed. In this case, the determination is achieved by comparing the magnification value with a predefinable magnification threshold value. The determination is also achieved by comparing the actuation speed value with a predefinable speed threshold value. For this purpose, the predefinable magnification threshold value and / or the predefinable speed threshold value can be predefined, for example, by being retrieved from a storage unit into the control unit of the particle beam device and / or being input into the control unit of the particle beam device by a user of the particle beam device.

[0047] The predefinable magnification threshold value can correspond to a magnification of, for example, 50000 times. Furthermore, the predefinable magnification threshold value can correspond to a magnification of, for example, 100000 times. In particular, the predefinable magnification threshold value is in the range of 50000 times to 500000 times, including the range extremes. The predefinable speed threshold value can be, for example, 1 pm / s. Furthermore, the predefinable speed threshold value can be, for example, 0.4 pm / s. In particular, the predefinable speed threshold value can be in the range of 0.1 pm / s to 5 pm / s, including the range extremes.

[0048] In one embodiment of the method according to the application, it is additionally or alternatively provided that the relative movement to be achieved is performed both by adapting the position of the object using the movable object carrier and by adapting the deflection of the particle beam of the particle beam device using the deflection device.

[0049] The present invention is based on the following surprising insight. Depending on the magnification value and the actuation speed value, the relative movement of the object and the field of view of the particle beam device (i.e. the relative movement of the object and / or the field of view with respect to each other) is achieved by adapting the position of the object using a movable object carrier or by adapting the deflection of the particle beam of the particle beam device using a deflection device. The present invention makes it possible to perform the relative movement in a suitable manner depending on the magnification value and the actuation speed value. In one example, the relative movement is performed by adapting the position of the object using a movable object carrier, thus enabling a fast positioning in a large spatial area at possible positions. In another example, the relative movement is performed by adapting the deflection of the particle beam of the particle beam device using a deflection device, thus enabling a high positioning accuracy. Thus, the present invention makes it possible to perform the relative movement uniformly, so that e.g. a tracking of a contour of the object and / or a counting operation of periodic structures can be simplified. Performing the relative movement by adapting the deflection of the particle beam of the particle beam device using a deflection device circumvents limitations due to a positioning using a movable object carrier. This is because performing the relative movement by adapting the deflection of the particle beam of the particle beam device using a deflection device makes it possible to avoid temperature variations of the movable object carrier and / or temperature variations of components arranged on the movable object carrier caused by an operation of the movable object carrier. This prevents thermal differences between adjacent components, which can lead to e.g. thermal drift and / or stress. Furthermore, an inaccurate positioning due to the use of moving elements in combination with the movable object carrier can be avoided. Thus, performing the relative movement by adapting the deflection of the particle beam of the particle beam device using a deflection device makes it possible to reduce thermal drift. Thus, a variation of the speed or a sudden change of the speed during the positioning of the object can be avoided.

[0050] In one embodiment of the method according to the present invention, additionally or alternatively, it is provided that providing control data for the relative positioning of the particle beam of the particle beam device with respect to the object is achieved by (a) retrieving the control data from a storage unit into a control unit of the particle beam device and / or inputting the control data into the control unit of the particle beam device by a user of the particle beam device, wherein the control data comprises (i) information about the magnification value and information about the speed value, or wherein the control data comprises (ii) information about a target position. The target position describes the relative positioning of the particle beam of the particle beam device with respect to the object. In other words, in this embodiment of the method according to the present invention, the control data can be formed by the information about the target position. For the purpose of the present invention, the target position is to be understood as meaning data clearly describing a spatial position. The target position comprises data describing a desired position of the arrangement of the object and the field of view of the particle beam device with respect to each other.

[0051] This embodiment of the method according to the application comprises transforming the provided control data into actuation data for actuating the movable object carrier or for actuating a deflection device of a particle beam of the particle beam device using the control unit. In this case, the transformation is performed using values regarding (a) the current orientation of the object, (b) the current scanning direction of the particle beam of the particle beam device on the object, (c) the current velocity of the object, (d) a velocity value from the control data and / or (e) a target position from the control data. The actuation data comprises (i) information regarding a magnification value and regarding an actuation velocity value and / or (ii) information regarding a working distance difference and a deflection modulation range difference. The working distance difference describes a difference between the current working distance and the working distance at a point (e.g. a target position) which can be predefined by the control data. For the purposes of the present application, the working distance describes the distance between the object and the lower pole piece of the objective of the particle beam device. The deflection modulation range difference describes a difference between the current deflection modulation range and the deflection modulation range at a point (e.g. a target position) which can be predefined by the control data. For the purposes of the present application, the deflection modulation range describes the degree of deflection of the particle beam of the particle beam device which is achieved by the deflection device.

[0052] Furthermore, this embodiment of the method according to the application comprises using the actuation data to perform a relative movement of the object and the field of view of the particle beam device relative to each other. In this case, the relative movement is realized by adapting the position of the object using the movable object carrier if (i) the magnification value is smaller than a predefinable magnification threshold value, if (ii) the magnification value is identical to the predefinable magnification threshold value, if (iii) the actuation speed value is greater than a predefinable speed threshold value, if (iv) the actuation speed value is identical to the predefinable speed threshold value, if (v) the working distance difference exceeds a predefinable working distance difference, if (vi) the working distance difference is identical to the predefinable working distance difference, if (vii) the deflection modulation range difference exceeds a predefinable deflection modulation range difference, and / or if (viii) the deflection modulation range difference is identical to the predefinable deflection modulation range difference. In other words, the magnification value, the actuation speed value, the working distance difference and / or the deflection modulation range difference determine the way in which the relative movement is performed. In this case, the determination is realized by comparing the magnification value with the predefinable magnification threshold value. The determination is also realized by comparing the actuation speed value with the predefinable speed threshold value. Furthermore, the determination is realized by comparing the working distance difference with the predefinable working distance difference. Still further, the determination is realized by comparing the deflection modulation range difference with the predefinable deflection modulation range difference. With regard to the predefinable magnification threshold value and / or the predefinable speed threshold value, reference is made to the explanations above, which apply analogously here as well. For this purpose, the predefinable working distance difference and / or the predefinable deflection modulation range difference can be predefined, for example, by being retrieved from a storage unit into the control unit of the particle beam device and / or being input into the control unit of the particle beam device by a user of the particle beam device.

[0053] The predefinable working distance difference can correspond, for example, to a working distance difference in a first range of 1 pm to 5 mm. Furthermore, the predefinable deflection modulation range difference can correspond, for example, to a deflection modulation range difference in a second range of 0 pm to 1 mm. In this embodiment of the method according to the application, alternatively, the relative movement is realized by adapting the deflection of the particle beam of the particle beam device using the deflection device if (a) the magnification value exceeds the predefinable magnification threshold value, if (b) the actuation speed value falls below the predefinable speed threshold value, if (c) the working distance difference falls below the predefinable working distance difference, and if (d) the deflection modulation range difference falls below the predefinable deflection modulation range difference.

[0054] An embodiment of the method according to the application additionally or alternatively provides that, when adapting the position of the object using the movable object carrier, the movable object carrier is used to perform at least one translational movement in at least one spatial direction. Additionally or alternatively, an embodiment of the method according to the application provides that, when adapting the position of the object using the movable object carrier, the movable object carrier is used to perform at least one pivotal movement about at least one axis of rotation. In other words, the movable object carrier can perform at least one translational movement in at least one spatial direction and / or at least one pivotal movement about at least one axis of rotation. In this case, a translational movement is understood to mean a linear movement in which all points of the object experience the same displacement. A pivotal movement is understood to mean a movement in which all points of the object move on a circular path about a common axis. In this case, the movement during the pivotal movement must not result in a closed circular path about the common axis.

[0055] A further embodiment of the method according to the application additionally or alternatively provides that, in order to adapt the deflection of the particle beam of the particle beam device, a guiding device of the particle beam device is used as a deflection device. In this case, the working distance can be changed by actuating the guiding device of the particle beam device. In other words, the working distance can be adjusted by the guiding device of the particle beam device. The working distance describes the distance between the object and the lower pole piece of the objective of the particle beam device. The guiding device comprises, for example, an objective for focusing the particle beam on the object, at least one electrostatic unit and / or at least one magnetic unit for beam shaping or for beam guidance, at least one stigmator, at least one condenser lens and / or at least one mechanically adjustable diaphragm unit, by means of which the particle beam is delimited. For example, the electrostatic and / or magnetic deflection elements mentioned further above and further below can be used as a guiding device. In particular, the beam column of the particle beam device is also used as a guiding device.

[0056] Furthermore, additionally or alternatively, the method according to the application can have at least one feature mentioned further above or below or a combination of at least two of the features mentioned further above or below.

[0057] The embodiments of the method according to the application are not limited to the sequence of the method steps presented above. Rather, any sequence of method steps suitable for solving the problem within the meaning of the application can be used. Alternatively or additionally, it is also provided that at least two method steps are carried out in parallel. Alternatively or additionally, it is also provided that individual method steps are omitted.

[0058] The present application also relates to a computer program product having a program code loadable into or loaded into a processor unit of a particle beam device, wherein the program code, when executed in the processor unit, controls the particle beam device such that the method having at least one of the features above or below or having a combination of at least two of the features above or below is performed. In other words, the present application also relates to a non-transitory computer readable medium comprising software loadable into or loaded into a processor unit of a particle beam device, wherein the software, when executed in the processor unit, controls the particle beam device such that the method having at least one of the features above or below or having a combination of at least two of the features above or below is performed. The software comprises executable code for performing at least one of the method steps above or below. In this respect, the present application also relates to a processor unit arranged on a particle beam device and designed to perform the method having at least one of the features above or below or having a combination of at least two of the features above or below.

[0059] The present application also relates to a particle beam device for imaging, processing and / or analyzing at least one object, wherein the particle beam device has been further explained above and will be further explained in more detail below. The explanations will be briefly summarized below. The particle beam device according to the present application comprises at least one beam generator for generating at least one particle beam comprising charged particles. For example, the charged particles are electrons and / or ions. Any element arranged in a sample chamber of the particle beam device can be embodied as an object. Further, the particle beam device according to the present application comprises at least one detector for detecting interaction particles and / or interaction radiation. Interaction particles and / or interaction radiation are emitted by an interaction of the particle beam with the object when the particle beam is incident on the object. As a result of the interaction, in particular, electrons are emitted by the object (so-called secondary electrons), and electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for image generation. Thus, an image representation of the object to be examined is obtained. Further, interaction radiation (for example, x-ray radiation and / or cathodoluminescence) is generated during the interaction, and this interaction radiation is detected by means of the detector and subsequently evaluated in order to analyze the object. Further, the particle beam device according to the present application comprises at least one movable object carrier for moving the object. The movable object carrier can be designed to perform at least one translational movement and / or to perform at least one pivotal movement. With regard to the translational movement and / or the pivotal movement, reference is made to the explanations above, which are likewise applicable analogously here. Further, the particle beam device according to the present application comprises at least one deflection device for deflecting the particle beam. For example, the deflection device is embodied as a device having electrostatic and / or magnetic deflection elements. In particular, the deflection device is embodied as a scanning device. Additionally or alternatively, the deflection device can be embodied as an objective. Further, the particle beam device according to the present application comprises at least one control unit for receiving control data, for actuating the movable object carrier and / or for actuating the deflection device. Further, the particle beam device according to the present application comprises at least one display unit for presenting data. Further, the particle beam device according to the present application comprises at least one storage unit for storing data. Further, the particle beam device according to the present application comprises a processor unit, in which a computer program product having the features already further mentioned above is loaded.

[0060] In one embodiment of the particle beam device according to the application, it is additionally or alternatively provided that the particle beam device comprises at least one guiding device for guiding, shaping and / or focusing a particle beam comprising charged particles onto the at least one object. The guiding device is arranged in and / or on a beam column of the particle beam device. For example, the guiding device comprises at least one electrostatic unit and / or at least one magnetic unit for beam shaping or for beam guiding, at least one stigmator, at least one condenser lens and / or at least one mechanically adjustable diaphragm unit by means of which the particle beam is defined. In particular, the electrostatic and / or magnetic deflection elements mentioned above and below can be embodied as a guiding device. In particular, the beam column of the particle beam device can also be embodied as a guiding device. For example, the deflection device mentioned above is embodied as a guiding device.

[0061] A further embodiment of the particle beam device according to the application additionally or alternatively provides that the beam generator is embodied as a first beam generator. In this case, the particle beam is embodied as a first particle beam comprising first charged particles, and the deflection device is embodied as a first deflection device for deflecting the first particle beam to a region within the sample chamber. The region within the sample chamber can in particular be the object and / or a region on the object. Furthermore, the particle beam device comprises at least one second beam generator for generating at least one second particle beam comprising second charged particles and at least one second deflection device for deflecting the at least one second particle beam to the region within the sample chamber. The second deflection device can be embodied, for example, as a second scanning device and / or a second objective.

[0062] In a further embodiment of the particle beam device according to the application, it is provided that the particle beam device is an electron beam device and / or an ion beam device. BRIEF DESCRIPTION OF DRAWINGS

[0063] Further practical embodiments and advantages of the application are described below in connection with the drawings, in which:

[0064] Figure 1 A schematic diagram of a first particle beam device is shown;

[0065] Figure 2 A schematic diagram of a second particle beam device is shown;

[0066] Figure 3 A schematic diagram of a third particle beam device is shown;

[0067] Figure 4 A schematic diagram of an embodiment of an object carrier in the form of an object stage is shown;

[0068] Figure 5 A schematic diagram of a particle beam device according to Figure 4a further schematic view of the object stage;

[0069] Figure 6 a schematic view showing the sequence of operations of a first embodiment of the method according to the application; and

[0070] Figure 7 a schematic view showing the sequence of operations of a second embodiment of the method according to the application. DETAILED DESCRIPTION

[0071] The application will now be explained in more detail by means of a particle beam apparatus in the form of an SEM and in the form of a combined apparatus comprising an electron beam column and an ion beam column. Explicit mention is made of the fact that the application can be used in any particle beam apparatus, in particular in any electron beam apparatus and / or any ion beam apparatus.

[0072] The figures are not drawn to scale.

[0073] Figure 1 A schematic view of the SEM 100 is shown. The SEM 100 comprises a first beam generator in the form of an electron source 101, which is embodied as a cathode. Furthermore, the SEM 100 is provided with an extraction electrode 102 and an anode 103, which is placed on one end of a particle beam column of the SEM 100 in the form of a beam guiding tube 104. By way of example, the electron source 101 is embodied as a hot field emitter. However, the application is not limited to such an electron source 101. Rather, any electron source can be used.

[0074] The electrons emerging from the electron source 101 form a primary electron beam. The electrons are accelerated to the anode potential as a result of the potential difference between the electron source 101 and the anode 103. In the embodiment shown here, the anode potential is 100 V to 35 kV, for example 5 kV to 15 kV, in particular 8 kV, relative to the ground potential of the housing of the sample chamber 120. However, alternatively, the anode potential can also be at ground potential.

[0075] Arranged on the beam guiding tube 104 are two condenser lenses, in particular a first condenser lens 105 and a second condenser lens 106. When viewed in the direction of a first objective lens 107 starting from the electron source 101, the first condenser lens 105 is arranged in front, followed by the second condenser lens 106. Explicit mention is made of the fact that further embodiments of the SEM 100 can comprise only a single condenser lens.

[0076] Arranged between the anode 103 and the first condenser lens 105 is a first diaphragm unit 108. Together with the anode 103 and the beam guiding tube 104, the first diaphragm unit 108 is at a high-voltage potential, in particular the potential of the anode 103, or is connected to ground. The first diaphragm unit 108 comprises a plurality of first apertures 108A, which are arranged in a circle in the plane of the first diaphragm unit 108.Figure 1 One of these is shown. For example, there are two first apertures 108A. Each of the many first apertures 108A has a different aperture diameter. The desired first aperture 108A can be adjusted to the optical axis OA of the SEM 100 by means of an adjustment mechanism (not shown). It is explicitly mentioned that in another embodiment, the first aperture unit 108 may be provided with only a single aperture 108A. In this embodiment, the adjustment mechanism may not be provided. Thus, the first aperture unit 108 is fixed. A fixed second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, the second aperture unit 109 is provided to be movable.

[0077] The first objective lens 107 includes pole shoes 110, in which drilled holes are formed. A beam guide tube 104 is guided through the drilled holes. Coils 111 are arranged in the pole shoes 110.

[0078] An electrostatic deceleration device is arranged on the object-side region of the beam guide tube 104. The electrostatic deceleration device includes a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged at one end of the beam guide tube 104, which faces the object 125 arranged on the object holder 114.

[0079] The tubular electrode 113, together with the beam guide tube 104, is at the potential of the anode 103, while the single electrode 112 and the object 125 are at the same potential or at a lower potential relative to the anode 103. In this case, this potential is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be slowed down to the desired energy required to examine the object 125.

[0080] SEM 100 also includes a scanning device 115 by means of which a primary electron beam can be deflected and scanned on object 125. During this process, electrons from the primary electron beam interact with object 125. As a result of this interaction, detected interacting particles and / or interacting radiation are generated. Specifically, the interacting particles are electrons emitted from the surface of object 125 (so-called secondary electrons) or backscattered electrons from the primary electron beam (so-called backscattered electrons).

[0081] The object 125 and the single electrode 112 can also be at different potentials and at a potential different from ground. This allows for adjustment of the deceleration point of the primary electron beam relative to the object 125. For example, if deceleration occurs at a point very close to the object 125, the imaging aberrations become smaller.

[0082] The scanning device 115 and / or the first objective 107 are referred to as a deflection device of the SEM 100. In other words, the scanning device 115 and / or the first objective 107 are implemented as a deflection device of the SEM 100. For example, in one embodiment of the SEM 100, the scanning device 115 is designed such that the primary electron beam can be directed in a targeted manner onto regions on the surface of the object 125 and above the object 125. This is the so-called scanning process. In particular, during the exemplary scanning process, the primary electron beam is directed to any desired number of sites in regions on the surface of the object 125.

[0083] In the beam guide 104, a detector arrangement comprising a first detector 116 and a second detector 117 is arranged for detecting secondary electrons and / or backscattered electrons. In this case, in the beam guide 104, the first detector 116 is arranged on the source side along the optical axis OA, while the second detector 117 is arranged on the object side along the optical axis OA. In this case, on the source side means along the optical axis OA that the first detector 116 is arranged spatially closer to the electron source 101 than the second detector 117, which is arranged spatially closer to the object 125 than the first detector 116. The first detector 116 and the second detector 117 are aligned in the direction of the object 125 by their sensor areas. The first detector 116 and the second detector 117 are arranged offset from each other in the direction of the optical axis OA of the SEM 100. The first detector 116 and the second detector 117 both have a respective passage opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are at approximately the potential of the anode 103 and the beam guide 104. The optical axis OA of the SEM 100 extends through the respective passage openings.

[0084] The second detector 117 is mainly used for detecting secondary electrons. Upon ejection from the object 125, the secondary electrons initially have low kinetic energy and arbitrary direction of motion. The secondary electrons are accelerated by the strong extraction field emitted from the tubular electrode 113 towards the direction of the first objective 107. The secondary electrons enter the first objective 107 approximately parallel to the optical axis OA. The beam diameter of the secondary electron beam remains small even in the first objective 107. Then, the first objective 107 has a strong effect on the secondary electrons and generates a relatively short secondary electron focus at a steep enough angle with respect to the optical axis OA, so that the secondary electrons diverge significantly from each other downstream of the focus and are mainly incident on the active area of the second detector 117. In contrast, the second detector 117 detects only a small fraction of the electrons backscattered at the object 125, i.e. backscattered electrons having a relatively high kinetic energy compared to the secondary electrons upon ejection from the object 125. The high kinetic energy and the angle with respect to the optical axis OA of the backscattered electrons upon ejection from the object 125 have the effect that the beam waist, i.e. the region of the beam having the smallest diameter, of the backscattered electrons is located in the vicinity of the second detector 117. The majority of the backscattered electrons pass through the passage opening of the second detector 117. Thus, the first detector 116 is essentially used for detecting backscattered electrons.

[0085] In another embodiment of the SEM 100, the first detector 116 can additionally be embodied with an opposite field grating 116A. The opposite field grating 116A is arranged on the side of the first detector 116 facing the object 125. The opposite field grating 116A has a negative potential with respect to the potential of the beam guiding tube 104, so that only backscattered electrons having a high energy pass through the opposite field grating 116A to the first detector 116. Additionally or alternatively, the second detector 117 comprises a further opposite field grating having a similar embodiment as the aforementioned opposite field grating 116A of the first detector 116 and having a similar function.

[0086] The detection signals generated by the first detector 116 and the second detector 117 are used for generating one or more electron-optical images of the surface of the object 125.

[0087] It is explicitly mentioned that the apertures of the first and second diaphragm units 108, 109 and the passage openings of the first and second detectors 116, 117 are shown in an exaggerated manner. The passage openings of the first and second detectors 116, 117 have a range perpendicular to the optical axis OA in the range of 0.5 mm to 5 mm. For example, the passage openings are circular and have a diameter perpendicular to the optical axis OA in the range of 1 mm to 3 mm.

[0088] In the embodiment shown here, the second aperture unit 109 is configured as a pinhole aperture and is provided with a second aperture 118 for the passage of a primary electron beam, the second aperture ranging from 5 µm to 500 µm, for example, 35 µm. Alternatively, in another embodiment, the second aperture unit 109 is provided with a plurality of apertures that can be mechanically displaced relative to the primary electron beam or can be directed to these apertures by using electrostatic and / or magnetic deflection elements. For example, the second aperture unit 109 is implemented as a pressure-level aperture. This separates a first region from a second region, in which an electron source 101 is arranged and an ultra-high vacuum (10) exists. -7 hPa to 10 -12 hPa), this second region has a high vacuum (10 hPa), -3 hPa to 10 -7 The second region is the intermediate pressure region of the bundle guide tube 104, which leads to the sample chamber 120.

[0089] Sample chamber 120 is under vacuum. A pump (not shown) is installed on sample chamber 120 to generate this vacuum. Figure 1 In the illustrated embodiment, the sample chamber 120 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10. -3 The pressure is hPa, and the second pressure range only includes pressures greater than 10. -3 The pressure is hPa. Sample chamber 120 is vacuum-sealed to ensure these pressure ranges.

[0090] An object holder 114 is arranged on or forms the object stage 122. The object stage 122 is configured to move in three directions perpendicular to each other, specifically in the x-direction (first stage axis), y-direction (second stage axis), and z-direction (third stage axis). Furthermore, the object stage 122 can rotate about two mutually perpendicular axes of rotation (the stage's axes of rotation). The invention is not limited to the object stage 122 described above. Rather, the object stage 122 may have additional translational and rotational axes along or about which it can move. The invention is also not limited to the order in which these axes are actuated. Additionally or alternatively, the invention is not limited to the order in which these axes are mechanically connected.

[0091] A further embodiment of the SEM 100 provides that the object holder 114 is embodied as a movable multi-object holder. In other words, the object holder 114 can be embodied such that it is movable and a plurality of objects 125 can be arranged on the object holder 114. Alternatively or additionally, this further embodiment of the SEM 100 provides that a first object 125 and a second object 125 are arranged on the object holder 114. The first object 125 and / or the second object 125 are imaged, processed and / or analyzed with the SEM 100.

[0092] The SEM 100 further comprises a third detector 121 arranged in the sample chamber 120. More precisely, the third detector 121 is arranged downstream of the object stage 122 when viewed along the optical axis OA from the electron source 101. The object stage 122 and thus the object holder 114 can be rotated such that the primary electron beam can be radiated through the object 125 arranged on the object holder 114. The ability to transmit radiation does not necessarily have to be achieved by rotation only. Cutouts in the object holder 114 and in the object stage 122 can be envisaged such that the primary electron beam can be radiated through the object 125 arranged on the object holder 114. To this end, the object 125 should be thin enough. When the primary electron beam passes through the object 125 to be examined, the electrons of the primary electron beam interact with the material of the object 125 to be examined. The third detector 121 detects the electrons that pass through the object 125 to be examined.

[0093] A radiation detector 119 for detecting interaction radiation, e.g. x-ray radiation and / or cathodoluminescence, is arranged in the sample chamber 120. The radiation detector 119, the first detector 116 and the second detector 117 are connected to a control unit 123 comprising a display unit 124 and a processor unit 127. The third detector 121 is also connected to the control unit 123. This connection is not shown for the sake of clarity. Additionally or alternatively, a further detector, in particular in the form of a chamber detector 500 for detecting secondary electrons, can be arranged in the sample chamber 120. A grating with an extraction voltage can be arranged in the sample chamber 120 in order to extract secondary electrons towards the chamber detector 500. The chamber detector 500 is likewise connected to the control unit 123. The control unit 123 processes the detection signals generated by the first detector 116, the second detector 117, the third detector 121, the radiation detector 119 and / or the chamber detector 500 and displays these detection signals on the display unit 124 in the form of values, graphs, images and / or analyses.

[0094] The object 125 can represent any element arranged in the sample chamber 120 of the SEM 100. In other words, any element arranged in the sample chamber 120 of the SEM 100 can be embodied as an object 125.

[0095] In one embodiment of the SEM 100, additionally or alternatively provided is that the SEM 100 comprises at least one guiding device for guiding, shaping and / or focusing a primary electron beam comprising electrons on the object 125. The guiding device is arranged in and / or on the beam column of the SEM 100 in the form of a beam guiding tube 104. For example, the guiding device comprises electrostatic and / or magnetic units for beam shaping or for beam guiding, an anastigmat, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109 by means of which the primary electron beam is defined. For example, the electrostatic and / or magnetic deflection elements mentioned above and below further can be implemented as guiding device. In particular, the beam guiding tube 104 of the SEM 100 can also be implemented as guiding device.

[0096] The deflection device can be implemented as guiding device. In other words, the deflection device is arranged in and / or on the beam column of the SEM 100 in the form of a beam guiding tube 104. For example, the deflection device comprises electrostatic and / or magnetic units for beam shaping or for beam guiding, an anastigmat, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109 by means of which the primary electron beam is defined. In particular, the beam guiding tube 104 of the SEM 100 can also be implemented as deflection device.

[0097] The program code of the computer program product is loaded into the processor unit 127 and, when executed, controls the SEM 100 such that the method according to the present application is performed. The method according to the present application will be discussed in further more detail below.

[0098] Figure 2 A particle beam apparatus in the form of a combination apparatus 200 is shown. The combination apparatus 200 comprises two particle beam columns. First, as already shown in Figure 1 the combination apparatus 200 is provided with a SEM 100, but without a sample chamber 120. Rather, the SEM 100 is arranged in a sample chamber 201. The sample chamber 201 is under vacuum. For generating the vacuum, a pump (not shown) is arranged on the sample chamber 201. In Figure 2 the shown embodiment, the sample chamber 201 is operated in a first pressure range or in a second pressure range. The first pressure range comprises only pressures less than or equal to 10 -3 hPa, and the second pressure range comprises only pressures greater than 10 -3 hPa. The sample chamber 201 is vacuum-tight in order to ensure these pressure ranges.

[0099] The third detector 121 is arranged in the sample chamber 201.

[0100] The SEM 100 is provided for generating a first particle beam, in particular an above further described primary electron beam, and has an optical axis, which is provided with the reference 709 in Figure 2 and is referred to as first beam axis in the following. Secondly, the combination device 200 is provided with an ion beam device 300, which is likewise arranged on the sample chamber 201. The ion beam device 300 likewise has an optical axis, which is provided with the reference 710 in Figure 2 and is referred to as second beam axis in the following.

[0101] For example, the SEM 100 is arranged vertically with respect to the sample chamber 201. In contrast, the ion beam device 300 is arranged at an angle of, for example, approximately 0° to 90° with respect to the SEM 100. For example, Figure 2 an arrangement of approximately 50° is shown in The ion beam device 300 comprises a second beam generator in the form of an ion beam generator 301. The ion beam generator 301 generates ions, which form a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302 at a predefinable electrical potential. The second particle beam then passes through an ion optical unit of the ion beam device 300, which comprises a beamlet lens 303 and a second objective 304. The second objective 304 finally generates an ion probe, which is focused on an object 125 arranged on the object holder 114. The object holder 114 is arranged on an object stage 122.

[0102] Above the second objective 304, i.e. in the direction of the ion beam generator 301, an adjustable or selectable diaphragm 306, a first electrode arrangement 307 and a second electrode arrangement 308 are arranged, wherein the first electrode arrangement 307 and the second electrode arrangement 308 are embodied as scanning electrodes. The second particle beam is scanned on the surface of the object 125 by means of the first electrode arrangement 307 and the second electrode arrangement 308, wherein the first electrode arrangement 307 acts in a first direction and the second electrode arrangement 308 acts in a second direction opposite the first direction. Thus, for example, a scan is performed in the first direction. A scan in the second direction perpendicular to the first direction is achieved by further electrodes (not shown) which are rotated by 90° on the first electrode arrangement 307 and the second electrode arrangement 308.

[0103] Figure 2 As explained above, the object holder 114 is arranged on or forms the object stage 122. InIn the embodiment shown, the object stage 122 is also embodied so as to be movable in three directions arranged perpendicular to each other, in particular in the x-direction (first stage axis), the y-direction (second stage axis) and the z-direction (third stage axis). Furthermore, the object stage 122 can be rotated about two rotation axes (rotation axes of the stage) arranged perpendicular to each other.

[0104] For better illustration of the individual units of the combined device 200, Figure 2 the distances between the individual units of the combined device 200 shown in

[0105] In the sample chamber 201, a radiation detector 119 for detecting interaction radiation (for example x-ray radiation and / or cathodoluminescence) is arranged. The radiation detector 119 is connected to a control unit 123, which comprises a display unit 124 and a processor unit 127. Additionally or alternatively, a further detector, in particular for detecting secondary electrons, in the form of a chamber detector 500 can be arranged in the sample chamber 201. The further detector is likewise connected to the control unit 123.

[0106] The control unit 123 processes detection signals generated by the first detector 116 (not shown in Figure 2 ), the second detector 117 (not shown in Figure 3 ), the third detector 121, the radiation detector 119 and / or the chamber detector 500 and displays these detection signals on the display unit 124 in the form of values, diagrams, images and / or analyses.

[0107] The control unit 123 also comprises a storage unit 126, in which data is stored and from which data is read out. The control unit 123 also comprises a processor unit 127. The program code of the computer program product is loaded into the processor unit 127 and, when executed, controls the combined device 200 such that the method according to the application is carried out. The method according to the application will be discussed in further more detail below.

[0108] Figure 3 is a schematic illustration of a further embodiment of a particle beam device according to the application. This embodiment of the particle beam device is provided with the reference sign 400 and comprises a mirror corrector for correcting, for example, chromatic and / or spherical aberrations. The particle beam device 400 comprises a particle beam column 401, which is embodied as an electron beam column and essentially corresponds to the electron beam column of a corrected SEM. However, the particle beam device 400 is not limited to an SEM with a mirror corrector. Rather, the particle beam device can comprise any type of corrector unit.

[0109] The particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403 and an anode 404. The electron source 402 is embodied, for example, as a hot field emitter. Electrons that exit from the electron source 402 are accelerated to the anode 404 due to the potential difference between the electron source 402 and the anode 404. Correspondingly, a particle beam in the form of an electron beam is formed along a first optical axis OAl.

[0110] After the particle beam has exited from the electron source 402, the particle beam is guided along a beam path corresponding to the first optical axis OAl. A first electrostatic lens 405, a second electrostatic lens 406 and a third electrostatic lens 407 serve to guide the particle beam.

[0111] Furthermore, the particle beam is adjusted along the beam path using a deflection device. The deflection device in this embodiment comprises a source adjustment unit having two magnetic deflection units 408 arranged along the first optical axis OAl. Furthermore, the particle beam device 400 comprises an electrostatic beam deflection unit. Arranged between the second electrostatic lens 406 and the third electrostatic lens 407 is a first electrostatic beam deflection unit 409, which is also embodied as a quadrupole in another embodiment. The first electrostatic beam deflection unit 409 is likewise arranged downstream of the magnetic deflection units 408. On one side of the first electrostatic beam deflection unit 409, a first multipole unit 409A in the form of a first magnetic deflection unit is arranged. Furthermore, on the other side of the first electrostatic beam deflection unit 409, a second multipole unit 409B in the form of a second magnetic deflection unit is arranged. The first electrostatic beam deflection unit 409, the first multipole unit 409A and the second multipole unit 409B are adjusted for the purpose of adjusting the particle beam relative to the axis of the third electrostatic lens 407 and the entrance window of the beam deflection device 410. The first electrostatic beam deflection unit 409, the first multipole unit 409A and the second multipole unit 409B can interact like a Wien filter. At the entrance of the beam deflection device 410, a further magnetic deflection element 432 is arranged.

[0112] The beam deflection device 410 is used as a particle beam deflector which deflects the particle beam in a certain way. The beam deflection device 410 comprises a plurality of magnetic sectors, in particular a first magnetic sector 411 A, a second magnetic sector 411 B, a third magnetic sector 411 C, a fourth magnetic sector 411 D, a fifth magnetic sector 411 E, a sixth magnetic sector 411 F and a seventh magnetic sector 411 G. The particle beam enters the beam deflection device 410 along a first optical axis OA1 and is deflected by the beam deflection device 410 in the direction of a second optical axis OA2. The beam is deflected by means of the first magnetic sector 411 A, by means of the second magnetic sector 411 B and by means of the third magnetic sector 411 C by an angle of 30° to 120°. The second optical axis OA2 is oriented at the same angle with respect to the first optical axis OA1. The beam deflection device 410 also deflects the particle beam guided along the second optical axis OA2 precisely in the direction of a third optical axis OA3. The beam deflection is provided by the third magnetic sector 411 C, the fourth magnetic sector 411 D and the fifth magnetic sector 411 E. In the embodiment in Figure 3 In the embodiment in WO 2002 / 067286 A2, the deflection with respect to the second optical axis OA2 and with respect to the third optical axis OA3 is provided by deflecting the particle beam by an angle of 90°. Thus, the third optical axis OA3 extends coaxially with respect to the first optical axis OA1. However, reference is made to the fact that the particle beam device 400 according to the present invention described here is not limited to a deflection angle of 90°. Rather, the beam deflection device 410 can select any suitable deflection angle, for example 70° or 110°, as a result of which the first optical axis OA1 does not extend coaxially with respect to the third optical axis OA3. For more details on the beam deflection device 410, reference is made to WO 2002 / 067286 A2.

[0113] After the particle beam has been deflected by the first magnetic sector 411 A, the second magnetic sector 411 B and the third magnetic sector 411 C, the particle beam is guided along the second optical axis OA2. The particle beam is guided to the electrostatic mirror 414 and travels along a fourth electrostatic lens 415, a third multipole unit 416A in the form of a magnetic deflection unit, a second electrostatic beam deflection unit 416, a third electrostatic beam deflection unit 417, and a fourth multipole unit 416B in the form of a magnetic deflection unit on its way to the electrostatic mirror 414. The electrostatic mirror 414 comprises a first mirror electrode 413A, a second mirror electrode 413B and a third mirror electrode 413C. The electrons of the particle beam reflected back at the electrostatic mirror 414 travel again along the second optical axis OA2 and enter the beam deflection device 410 again. These electrons are then deflected by the third magnetic sector 411 C, the fourth magnetic sector 411 D and the fifth magnetic sector 411 E to the third optical axis OA3.

[0114] The electrons of the particle beam exit the beam deflection device 410 and are guided along a third optical axis OA3 to an object 425 intended to be inspected and arranged in the object holder 114. On the way to the object 425, the particle beam is guided to a fifth electrostatic lens 418, a beam guiding tube 420, a fifth multipole unit 418A, a sixth multipole unit 418B and an objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. By the fifth electrostatic lens 418, the particle beam is decelerated or accelerated to the potential of the beam guiding tube 420.

[0115] By means of the objective lens 421, the particle beam is focused onto a focal plane in which the object 425 is arranged. The object holder 114 is arranged on or forms an object stage 424 which is movable. The movable object stage 424 is arranged in a sample chamber 426 of the particle beam device 400. The object stage 424 is embodied to be movable in three directions which are arranged perpendicular to each other, in particular in an x-direction (first stage axis), a y-direction (second stage axis) and a z-direction (third stage axis). Furthermore, the object stage 424 can be rotated around two rotation axes (rotation axes of the stage) which are arranged perpendicular to each other.

[0116] The sample chamber 426 is under vacuum. For generating the vacuum, a pump (not shown) is arranged on the sample chamber 426. In the shown embodiment, the sample chamber 426 is arranged in a vacuum chamber 428. The vacuum chamber 428 is under vacuum. For generating the vacuum, a pump (not shown) is arranged on the vacuum chamber 428. Figure 4 In the shown embodiment, the sample chamber 426 is operated in a first pressure range or in a second pressure range. The first pressure range comprises only pressures which are less than or equal to 10 hPa, and the second pressure range comprises only pressures which are greater than 10 hPa. The sample chamber 426 is vacuum-tight in order to ensure these pressure ranges. -3 -3 The sample chamber 426 is vacuum-tight in order to ensure these pressure ranges.

[0117] The objective lens 421 can be embodied as a combination of a magnetic lens 422 and a sixth electrostatic lens 423. The end of the beam guiding tube 420 can also be an electrode of an electrostatic lens. After exiting from the beam guiding tube 420, the particles of the particle beam are decelerated to the potential of the object 425. The objective lens 421 is not limited to a combination of a magnetic lens 422 and a sixth electrostatic lens 423. Rather, the objective lens 421 can take any suitable form. For example, the objective lens 421 can also be embodied as a pure magnetic lens or a pure electrostatic lens.

[0118] The particle beam focused on the object 425 interacts with the object 425. Interaction particles are generated. In particular, secondary electrons are emitted from the object 425 or backscattered electrons are backscattered at the object 425. The secondary electrons or backscattered electrons are likewise accelerated and guided along the third optical axis OA3 into the beam guiding tube 420. In particular, the trajectories of the secondary electrons and backscattered electrons travel in the opposite direction of the particle beam on the course of the beam path of the particle beam. ​

[0119] The particle beam device 400 comprises a first analysis detector 419 which is arranged along the beam path between the beam deflection device 410 and the objective 421. Secondary electrons which travel in a direction which is oriented at a large angle with respect to the third optical axis OA3 are detected by the first analysis detector 419. Backscattered electrons and secondary electrons which are at a small axial distance with respect to the third optical axis OA3 at the site of the first analysis detector 419 enter the beam deflection device 410 and are deflected by the fifth magnetic sector 411 E, the sixth magnetic sector 411 F and the seventh magnetic sector 411 G along a detection beam path 427 to a second analysis detector 428. The deflection angle is for example 90° or 110°.

[0120] The first analysis detector 419 generates a detection signal which is mainly generated by emitted secondary electrons. The detection signal generated by the first analysis detector 419 is guided to the control unit 123 and is used for obtaining information about the characteristics of the interaction region of the focused particle beam with the object 425. In particular, the focused particle beam is scanned over the object 425 using a scanning device 429. By means of the detection signal generated by the first analysis detector 419, an image of the scanned region of the object 425 can then be generated and displayed on a presentation unit. The presentation unit is for example a display unit 124 which is arranged on the control unit 123. The control unit 123 additionally comprises a processor unit 127.

[0121] The second analysis detector 428 is also connected to the control unit 123. The detection signal from the second analysis detector 428 is guided to the control unit 123 and is used for generating an image of the scanned region of the object 425 and displaying this image on a presentation unit. The presentation unit is for example a display unit 124 which is arranged on the control unit 123.

[0122] A radiation detector 119 for detecting interaction radiation (for example x-ray radiation and / or cathodoluminescence) is arranged on or in the sample chamber 426. The radiation detector 119 is connected to the control unit 123 which comprises a display unit 124. The control unit 123 processes the detection signals from the radiation detector 119 and displays these detection signals in an analyzed form on the display unit 124.

[0123] The control unit 123 also comprises a storage unit 126 in which data are stored and from which data are read out. The control unit 123 also comprises a processor unit 127. A program code of a computer program product is loaded into the processor unit 127 and when executed, the program code controls the particle beam device 400 such that the method according to the present application is performed. The method according to the present application will be discussed in further more detail below.

[0124] Furthermore, the particle beam device 400 comprises a chamber detector 500 connected to the control unit 123.

[0125] In the case of the particle beam device 400, the primary electron beam can be rotated (e.g. tilted) with respect to the object 425, for example, using the fifth multipole unit 418A and the sixth multipole unit 418B. Additionally or alternatively, the primary electron beam can be rotated (e.g. tilted) with respect to the object 425, for example, using the first multipole unit 409A and the second multipole unit 409B.

[0126] The object stage 122, 424 of the particle beam devices 100, 200 and 400 explained above will now be discussed in more detail below. The object stage 122, 424 is embodied as a movable object carrier in the form of an object stage, which is schematically shown in Figure 5 and Figure 4 Reference is made to the fact that the present application is not limited to the object stages 122, 424 described here. Rather, the present application can comprise any movable object stage suitable for the present application.

[0127] The object holder 114 is arranged on the object stage 122, 424. The object stage 122, 424 comprises movement elements which ensure that the manner of movement of the object stage 122, 424 is such that a region of interest on the object 125, 425 can be examined, for example, by means of a particle beam. The movement elements are schematically shown in Figure 5 and Figure 5 and are explained below.

[0128] The object stage 122, 424 comprises, for example, a first movement element 600 arranged on a housing 601 of the sample chamber 120, 201 or 426, in which the object stage 122, 424 is arranged in turn. The first movement element 600 enables movement of the object stage 122, 424 along the z-axis (third stage axis). Furthermore, a second movement element 602 is provided. The second movement element 602 enables rotation of the object stage 122, 424 about a first rotation axis 603 of the stage (also referred to as a tilt axis). This second movement element 602 serves to tilt the object 125, 425 about the first rotation axis 603 of the stage, wherein the object 125, 425 is arranged on the object holder 114.

[0129] At the second moving element 602, a third moving element 604 is arranged again, which is embodied as a guide for a slide and ensures that the object table 122, 424 is movable in the x-direction (first table axis). The aforementioned slide is again a further moving element, in particular a fourth moving element 605. The fourth moving element 605 is embodied such that the object table 122, 424 is movable in the y-direction (second table axis). For this purpose, the fourth moving element 605 comprises a guide in which a further slide is guided, on which the object holder 114 is arranged again.

[0130] The object holder 114 is again embodied with a fifth moving element 606, which enables a rotation of the object holder 114 about a second rotational axis 607 of the table. The second rotational axis 607 of the table is oriented perpendicular to the first rotational axis 603 of the table.

[0131] Due to the aforementioned arrangement, the object table 122, 424 of the embodiments discussed here has the following kinematic chain: first moving element 600 (movement along the z-axis) - second moving element 602 (rotation about the first rotational axis 603 of the table) - third moving element 604 (movement along the x-axis) - fourth moving element 605 (movement along the y-axis) - fifth moving element 606 (rotation about the second rotational axis 607 of the table). Additionally or alternatively, other kinematic chains can also be realized.

[0132] In a further embodiment (not shown), it is provided that a further moving element is arranged on the object table 122, 424, such that a movement along a further translational axis and / or about a further rotational axis is possible.

[0133] As is apparent from Figure 5 each of the aforementioned moving elements is connected to a drive unit M1 to M5 in the form of a motor. In this regard, the first moving element 600 is connected to a first drive unit M1 and is driven due to a drive force provided by the first drive unit M1. The second moving element 602 is connected to a second drive unit M2, which drives the second moving element 602. The third moving element 604 is again connected to a third drive unit M3. The third drive unit M3 provides a drive force for driving the third moving element 604. The fourth moving element 605 is connected to a fourth drive unit M4, wherein the fourth drive unit M4 drives the fourth moving element 605. Furthermore, the fifth moving element 606 is connected to a fifth drive unit M5. The fifth drive unit M5 provides a drive force for driving the fifth moving element 606.

[0134] The aforementioned drive units M1 to M5 can be implemented as moving elements in the form of, for example, stepper motors, and are controlled by the drive control unit 608, and each drive unit is supplied with a supply current by the drive control unit 608 (see Figure 1 The following fact is explicitly mentioned: The present application is not limited to the movement of the object carrier 122, 424 by means of a stepper motor. Rather, any moving element (such as a brushless motor, a piezoelectric driver, and / or a linear motor) can be used as a drive unit.

[0135] In the following, embodiments of the method according to the present application are explained in detail with respect to the SEM 100 according to Figure 6 In the following, embodiments of the method according to the present application are explained in detail with respect to the SEM 100 according to Figure 1 A schematic diagram showing the sequence of operations of a first embodiment of the method according to the present application is shown, which method is performed by the SEM 100 according to Figure 7 In the case of the further particle beam devices 200 and 400 mentioned above, the following explanations apply mutatis mutandis with respect to performing the first embodiment of the method according to the present application.

[0136] The method according to the present application serves for operating the SEM 100 to image, process, and / or analyze an object 125. In this case, the object 125 can represent any element arranged in the sample chamber 120 of the SEM 100. In other words, any element arranged in the sample chamber 120 of the SEM 100 can be implemented as an object 125.

[0137] In particular, the method according to the present application comprises: (A) providing control data; (B) transforming the provided control data into actuation data for actuating a movable object carrier (for example in the form of the object carrier 122) or for actuating a deflection device of the SEM 100 to deflect the primary electron beam; and (C) using the actuation data to perform a relative movement with respect to the object 125 and the field of view of the SEM 100 (i.e. a relative movement of the object 125 and / or the field of view with respect to each other), wherein (i) the relative movement is achieved by adapting the position of the object 125 using the movable object carrier, or (ii) the relative movement is achieved by adapting the deflection of the primary electron beam of the SEM 100 using the deflection device. In this case, the manner in which the relative movement is performed depends on the size of the magnification value with respect to a predefinable magnification threshold value and / or on the size of the actuation speed value with respect to a predefinable speed threshold value.

[0138] For example, the deflection device is embodied as a device having electrostatic and / or magnetic deflection elements. Furthermore, the scanning device 115 and / or the first objective 107 is embodied as a deflection device of the SEM 100. For example, in one embodiment of the SEM 100, the scanning device 115 is designed such that the primary electron beam can be directed in a targeted manner onto regions on the surface of the object 125 and above the object 125 (scanning process). In particular, during the exemplary scanning process, the primary electron beam is directed to any desired number of sites in regions on the surface of the object 125.

[0139] The guiding device is arranged in and / or on the beam column of the SEM 100 in the form of the beam guiding tube 104. For example, the electrostatic and / or magnetic deflection elements mentioned above and further below can be used as the guiding device. In particular, the guiding device comprises electrostatic and / or magnetic units for beam shaping or for beam guiding, an anastigmat, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109, by means of which the primary electron beam is delimited. In particular, the beam guiding tube 104 of the SEM 100 can also be embodied as the guiding device.

[0140] For example, the deflection device is embodied as the guiding device. In other words, the deflection device is arranged in and / or on the beam column of the SEM 100 in the form of the beam guiding tube 104. In particular, the deflection device comprises electrostatic and / or magnetic units for beam shaping or for beam guiding, an anastigmat, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109, by means of which the primary electron beam is delimited. In particular, the beam guiding tube 104 of the SEM 100 is embodied as the deflection device. For example, the deflection of the primary electron beam with respect to the optical axis OA of the SEM 100 is adjusted by at least one of the aforementioned deflection devices 104, 105, 106, 107, 108, 109, 115. For example, the deflection is adjusted in the x-axis direction, in the y-axis direction and / or in the z-axis direction.

[0141] The method step S1 of the method according to the application involves providing control data for the relative positioning of the primary electron beam of the SEM 100 relative to the object 125. The provision of the control data is effected by (a) retrieving the control data from the storage unit 126 into the control unit 123 of the SEM 100 and / or (b) inputting the control data into the control unit 123 of the SEM 100 by a user of the SEM 100. The control data comprise information on a magnification value and information on a speed value. The magnification value describes a ratio between the real size of the object 125 and the represented size of the object 125 on the display unit 124. The speed value describes a change per unit of time of the position of the object 125 relative to the optical axis OA of the SEM 100. In other words, the speed value indicates the speed of the object 125 relative to the optical axis OA of the SEM 100.

[0142] The method step S2 of the method according to the application involves transforming the provided control data into actuation data. The actuation data are used for actuating the movable object carrier, for example in the form of the object stage 122, or for actuating at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115 of the SEM 100 to deflect the primary electron beam of the SEM 100 using the control unit 123. For example, the object holder 114 and / or the object stage 122 are used as the movable object carrier. Furthermore, in particular, the scanning device 115, the first objective 107, the beam guiding tube 104, the electrostatic and / or magnetic units for beam shaping or for beam guiding, the stigmator, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109, by means of which the primary electron beam is defined, are used as deflection devices. The transformation is carried out using values relating to (a) the current orientation of the object 125, (b) the current scanning direction of the primary electron beam of the SEM 100 on the object 125, (c) the current speed of the object 125 and / or (d) the speed values from the control data. The actuation data comprise information relating to the magnification value and to the actuation speed value. In this case, the actuation speed value describes the actual speed of the movable object carrier during the movement of the movable object carrier, i.e. here the object holder 114 or the object stage 122, from the current position to a position which can be predefined by the control data. In other words, the provided control data are transformed into actuation data using the control unit 123, so that the movable object carrier, i.e. here the object holder 114 or the object stage 122, and / or the deflection devices of the SEM 100, i.e. here the scanning device 115, the first objective 107, the beam guiding tube 104, the electrostatic and / or magnetic units for beam shaping or for beam guiding, the stigmator, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109, by means of which the primary electron beam is defined, can be actuated to deflect the primary electron beam. For example, the provided control data can relate to the direction of movement of the movable object carrier 114, 122 and / or the direction of movement of at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115 of the SEM 100, wherein the associated movement along the direction of movement of the movable object carrier 114, 122 and / or the deflection of the primary electron beam of the SEM 100 along the direction of movement caused by the corresponding deflection device 104, 105, 106, 107, 108, 109, 115 cannot be carried out directly by the operation of a single actuation unit. This will be explained in detail below. The single actuation unit of the movable object carrier 114, 122 is, for example, a single drive unit M1 to M5.In other words, the provided control data can relate to a movement direction of the movable object carrier 114, 122, wherein the associated movement of the movable object carrier 114, 122 along the movement direction cannot be performed directly by operation of a single drive unit M1 to M5. For example, the provided control data can relate to a movement direction of the movable object carrier 114, 122, wherein the associated movement of the movable object carrier 114, 122 along the movement direction is performed or can be performed by a combination of operation of at least two drive units M1 to M5. The same applies analogously to at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115. A single actuation unit of at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115 is embodied for example as a single electrostatic deflection element and / or a single magnetic deflection element. In other words, the provided control data can relate to a movement direction of at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115, wherein the associated movement along the movement direction, here a deflection of the primary electron beam caused by the deflection device 104, 105, 106, 107, 108, 109, 115, cannot be performed directly by operation of a single electrostatic deflection element and / or a single magnetic deflection element. For example, the provided control data can relate to a movement direction of at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115, wherein the associated movement along the movement direction, here a deflection of the primary electron beam caused by the deflection device 104, 105, 106, 107, 108, 109, 115, is performed or can be performed by a combination of operation of at least two electrostatic deflection elements and / or magnetic deflection elements. The transformation makes it possible to perform a movement of the movable object carrier 114, 122 along a further movement direction and / or a movement of the primary electron beam of the SEM 100 in the form of a deflection caused by at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115 along a further movement direction, such that a movement of the movable object carrier 114, 122 along a movement direction that cannot be actuated directly and / or a deflection of the primary electron beam of the SEM 100 caused by the deflection device 104, 105, 106, 107, 108, 109, 115 along a movement direction that cannot be actuated directly is performed. The transformation of the provided control data into actuation data can be performed for example using the processor unit 127.

[0143] The method step S3Q of the method according to the application involves checking whether the magnification value exceeds a predefinable magnification threshold value and whether the actuation speed value falls below a predefinable speed threshold value.

[0144] Next, further method steps of the method according to the present application, the further method steps comprise using the actuation data for performing a relative movement with respect to the object 125 and the field of view of the SEM 100 (i.e. a relative movement of the object and / or the field of view with respect to each other). In other words, the relative movement of the object 125 and the field of view of the SEM 100 with respect to each other can for example be performed by moving the object 125 without moving the field of view of the SEM 100. Additionally or alternatively, the relative movement of the object 125 and the field of view of the SEM 100 with respect to each other can for example be performed by moving the field of view of the SEM 100 without moving the object 125. Further, additionally or alternatively, for performing the relative movement of the object 125 and the field of view of the SEM 100 with respect to each other, for example, both a movement of the object 125 and a movement of the field of view of the SEM 100 can be implemented, in which case the movement of the object 125 must not be identical in time and space to the movement of the field of view of the SEM 100 in order to achieve the relative movement of the object 125 and the field of view of the SEM 100 with respect to each other. For example, the movement of the object 125 is achieved by using the movable object carrier 114, 122. For example, the movement of the field of view of the SEM 100 is achieved by using at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115, such that a deflection of the primary electron beam of the SEM 100 caused by at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115 is achieved, such that the field of view of the SEM 100 is moved. The field of view comprises the area of the scanning process. In other words, the field of view particularly denotes an area comprising the area of the scanning process. For example, the area of the scanning process is captured by scanning the primary electron beam. The field of view can encompass a larger area than the area of the scanning process.

[0145] A further method step S3A of the method according to the present application involves adapting the position of the object 125 by using the movable object carrier 114, 122 using the actuation data for performing a relative movement with respect to the object 125 and the field of view of the SEM 100 (i.e. a relative movement of the object 125 and / or the field of view with respect to each other) in case of:

[0146] - the magnification value is smaller than a predefinable magnification threshold value,

[0147] - the magnification value is identical to a predefinable magnification threshold value,

[0148] - the actuation speed value is greater than a predefinable speed threshold value

[0149] and / or

[0150] - the actuation speed value is identical to a predefinable speed threshold value.

[0151] As an alternative thereto, the method step S3B is implemented as a further method step of the method according to the application. The method step S3B involves, in case of a relative movement (i.e. a relative movement of the object 125 and / or the field of view with respect to each other) with respect to the object 125 and the field of view of the SEM 100 is to be implemented using actuation data to perform a relative movement of the object 125 and the SEM 100 by using at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115 to adapt a deflection of the primary electron beam of the SEM 100:

[0152] - a magnification value exceeds a predefinable magnification threshold

[0153] and

[0154] - an actuation speed value falls below a predefinable speed threshold.

[0155] In other words, the relative movement can be performed by moving the object carrier 114, 122 together with the object 125 arranged on the object carrier 114, 122 or by adapting a beam path of the primary electron beam of the SEM 100.

[0156] In other words, the magnification value and the actuation speed value determine a manner in which the relative movement is performed. In this case, the determination is achieved by comparing the magnification value with a predefinable magnification threshold. The determination is also achieved by comparing the actuation speed value with a predefinable speed threshold. For this purpose, the predefinable magnification threshold and / or the predefinable speed threshold can be predefined, for example, by being retrieved from a storage unit 126 into a control unit 123 of the SEM 100 and / or being input into the control unit 123 of the SEM 100 by a user of the SEM 100.

[0157] The predefinable magnification threshold can correspond to a magnification of, for example, 50000 times. Furthermore, the predefinable magnification threshold can correspond to a magnification of, for example, 100000 times. The predefinable speed threshold can be, for example, 1 pm / s. Furthermore, the predefinable speed threshold can be, for example, 0.4 pm / s. With regard to further possible value ranges, reference is made to the further explanations above, which also apply here.

[0158] In one embodiment of the method according to the application, it is additionally or alternatively provided that the relative movement to be implemented is performed both by adapting a position of the object 125 using a movable object carrier 114, 122 and by adapting a deflection of the primary electron beam of the SEM 100 using at least one of the deflection devices 104, 105, 106, 107, 108, 109, 115.

[0159] Figure 1A schematic diagram showing the sequence of operations of a second embodiment of the method according to the application is executed by the SEM 100 according to Figure 7 In the case of the further particle beam devices 200 and 400 mentioned above, the following explanations apply mutatis mutandis with regard to executing this embodiment of the method according to the application.

[0160] The second embodiment of the method according to the application according to Figure 6 is based on the first embodiment of the method according to the application in Figure 6 . Therefore, reference is first made to the explanations given above, which also apply here. In comparison to the first embodiment of the method according to the application according to Figure 7 , the second embodiment of the method according to the application according to Figure 6 comprises the method step S3QB. In comparison to the first embodiment of the method according to the application according to Figure 7 , the second embodiment of the method according to the application according to Figure 7 does not comprise the method step S3Q.

[0161] In the second embodiment of the method according to the application according to Figure 7 , the provision of control data for the relative positioning of the primary electron beam of the SEM 100 with respect to the object 125 in the method step S1 is achieved by (a) retrieving the control data from the storage unit 126 into the control unit 123 of the SEM 100 and / or (b) inputting the control data into the control unit 123 of the SEM 100 by a user of the SEM 100, wherein the control data comprises (i) information about the magnification value and information about the speed value, or wherein the control data comprises (ii) information about the target position. The target position describes the relative positioning of the primary electron beam of the SEM 100 with respect to the object 125. In other words, in the second embodiment of the method according to the application according to Figure 7 , the control data can be formed by the information about the target position. For the purposes of the present application, the target position is to be understood to mean data which clearly describe a spatial position. The target position comprises data which describe the desired position of the arrangement of the object 125 and the field of view of the SEM 100 with respect to each other.

[0162] In the second embodiment of the method according to the application according to Figure 7The second method step S2 of the second embodiment of the method according to the application involves using the control unit 123 to transform the provided control data into actuation data for actuating the movable object carrier 114, 122 or for actuating the deflection devices 104, 105, 106, 107, 108, 109, 115 of the primary electron beam of the SEM 100. In this case, the transformation is performed using values regarding (a) the current orientation of the object 125, (b) the current scanning direction of the primary electron beam of the SEM 100 on the object 125, (c) the current speed of the object 125, (d) the speed value from the control data and / or (e) the target position from the control data. The actuation data comprises (i) information regarding the magnification value and regarding the actuation speed value and / or (ii) information regarding the working distance difference and the deflection modulation range difference. The working distance difference describes the difference between the current working distance and the working distance at the point (e.g. the target position) which can be predefined by the control data. For the purposes of the present application, the working distance describes the distance between the object 125 and the lower pole piece of the objective lens 107 of the SEM 100. The deflection modulation range difference describes the difference between the current deflection modulation range and the deflection modulation range at the point (e.g. the target position) which can be predefined by the control data. For the purposes of the present application, the deflection modulation range describes the degree of deflection of the primary electron beam of the SEM 100 which is achieved by the deflection devices 104, 105, 106, 107, 108, 109, 115.

[0163] According to the second embodiment of the method according to the application, the method step S3QB involves checking whether the magnification value exceeds a predefinable magnification threshold value, whether the actuation speed value falls below a predefinable speed threshold value, whether the working distance difference falls below a predefinable working distance difference and whether the deflection modulation range difference falls below a predefinable deflection modulation range difference. Figure 7

[0164] With regard to the relative movement between the object 125 and the field of view of the SEM 100, reference is made to the explanations above, which apply analogously here.

[0165] According to the second embodiment of the method according to the application, the method step S3QB involves checking whether the magnification value exceeds a predefinable magnification threshold value, whether the actuation speed value falls below a predefinable speed threshold value, whether the working distance difference falls below a predefinable working distance difference and whether the deflection modulation range difference falls below a predefinable deflection modulation range difference. Figure 7 ​In a second embodiment of the method according to the application, in method step S3A, if (i) the magnification value is smaller than a predefinable magnification threshold value, if (ii) the magnification value is identical to the predefinable magnification threshold value, if (iii) the actuation speed value is greater than a predefinable speed threshold value, if (iv) the actuation speed value is identical to the predefinable speed threshold value, if (v) the working distance difference exceeds a predefinable working distance difference, if (vi) the working distance difference is identical to the predefinable working distance difference, if (vii) the deflection modulation range difference exceeds a predefinable deflection modulation range difference, and / or if (viii) the deflection modulation range difference is identical to the predefinable deflection modulation range difference, the relative movement is implemented by adapting the position of the object 125 using the movable object carrier 114, 122. In other words, the magnification value, the actuation speed value, the working distance difference and / or the deflection modulation range difference determine the way in which the relative movement is performed. In this case, the determination is effected by comparing the magnification value with the predefinable magnification threshold value. The determination is also effected by comparing the actuation speed value with the predefinable speed threshold value. Furthermore, the determination is effected by comparing the working distance difference with the predefinable working distance difference. Still further, the determination is effected by comparing the deflection modulation range difference with the predefinable deflection modulation range difference. With regard to the predefinable magnification threshold value and / or the predefinable speed threshold value, reference is made to the explanations above, which apply analogously here. The predefinable working distance difference and / or the predefinable deflection modulation range difference can be predefined, for example, by being retrieved from a storage unit 126 into the control unit 123 of the SEM 100 and / or input by a user of the SEM 100 into the control unit 123 of the SEM 100.

[0166] The predefinable working distance difference may, for example, correspond to a working distance difference in a first range of 1 pm to 5 mm. Furthermore, the predefinable deflection modulation range difference may, for example, correspond to a deflection modulation range difference in a second range of 0 pm to 1 mm.

[0167] Alternatively, in the second embodiment of the method according to the application according to ​ In a second embodiment of the method according to the application, in method step S3B, if (a) the magnification value exceeds a predefinable magnification threshold value, if (b) the actuation speed value falls below a predefinable speed threshold value, if (c) the working distance difference falls below a predefinable working distance difference, and if (d) the deflection modulation range difference falls below a predefinable deflection modulation range difference, the relative movement is implemented by adapting the deflection of the primary electron beam of the SEM 100 using the deflection devices 104, 105, 106, 107, 108, 109, 115.

[0168] An embodiment of the method according to the application additionally or alternatively provides that, when adapting the position of the object 125 using the movable object carrier 114, 122, the movable object carrier 114, 122 is used to perform at least one translational movement in at least one spatial direction. Additionally or alternatively, an embodiment of the method according to the application provides that, when adapting the position of the object 125 using the movable object carrier 114, 122, the movable object carrier 114, 122 is used to perform at least one pivotal movement about at least one axis of rotation. In other words, the movable object carrier 114, 122 can perform at least one translational movement in at least one spatial direction and / or at least one pivotal movement about at least one axis of rotation. In this case, a translational movement is to be understood as meaning a linear movement in which all points of the object experience the same displacement. A pivotal movement is to be understood as meaning a movement in which all points of the object move in a circular path about a common axis. In this case, the movement must not result in a closed circular path about the common axis during the pivotal movement. For example, in the case of the use of the object stage 122 as the movable object carrier, the at least one translational movement in at least one spatial direction can be effected in the z direction by means of the first movement element 600, in the x direction by means of the third movement element 604 and / or in the y direction by means of the fourth movement element 605. For example, in the case of the use of the object stage 122 as the movable object carrier, the at least one pivotal movement about at least one axis of rotation can be effected by means of the second movement element 602 about the first axis of rotation 603 of the stage and / or by means of the fifth movement element 606 about the second axis of rotation 607 of the stage.

[0169] A further embodiment of the method according to the application additionally or alternatively provides that, in order to adapt the deflection of the primary electron beam of the SEM 100, the guiding device of the SEM 100 is used as the deflection device. The guiding device comprises, for example, the first objective lens 107 for focusing the primary electron beam on the object 125, electrostatic and / or magnetic units for beam shaping or for beam guidance, an aplanat, the first condenser lens 105, the second condenser lens 106, the first diaphragm unit 108 and / or the second diaphragm unit 109, by means of which the primary electron beam is delimited. For example, the electrostatic and / or magnetic deflection elements mentioned further above and below can be used as the guiding device. In particular, the beam guidance tube 104 of the SEM 100 can also be embodied as the guiding device.

[0170] As has already been explained above, the working distance describes the distance between the object 125 and the lower pole piece of the first objective lens 107 of the SEM 100. The working distance can be changed by actuating the guiding device of the SEM 100. In other words, the working distance can be adjusted by means of the guiding device of the SEM 100.

[0171] Further, additionally or alternatively, the method according to the present application can have at least one feature mentioned further above or below, or a combination of at least two of the features mentioned further above or below.

[0172] Embodiments of the method according to the present application are not limited to the order of the method steps presented above. Rather, any order of the method steps can be used which is suitable to solve the problem within the meaning of the present application. Alternatively or additionally, it is also provided that at least two method steps are carried out in parallel. Alternatively or additionally, it is also provided that an individual method step is omitted.

[0173] The features of the present application disclosed in the specification, drawings and claims can be necessary for realizing the present application in different embodiments thereof, either individually or in any desired combination. The present application is not limited to the described embodiments. Variations can be possible within the scope of the claims and in view of the knowledge of a person skilled in the art.

[0174] List of reference signs

[0175] 100 SEM

[0176] 101 electron source

[0177] 102 extraction electrode

[0178] 103 anode

[0179] 104 beam guiding tube

[0180] 105 first condenser lens

[0181] 106 second condenser lens

[0182] 107 first objective

[0183] 108 first diaphragm unit

[0184] 108A first aperture

[0185] 109 second diaphragm unit

[0186] 110 pole piece

[0187] 111 coil

[0188] 112 single electrode

[0189] 113 tubular electrode

[0190] 114 object holder

[0191] 115 scanning device

[0192] 116 first detector

[0193] 116A opposite field grating

[0194] 117 second detector

[0195] 118 second aperture

[0196] 119 radiation detector

[0197] 120 sample chamber

[0198] 121 third detector

[0199] 122 object stage

[0200] 123 control unit

[0201] 124 display unit

[0202] 125 object

[0203] 126 storage unit

[0204] 127 processor unit

[0205] 200 combination apparatus

[0206] 201 sample chamber

[0207] 300 ion beam apparatus

[0208] 301 ion beam generator

[0209] 302 extraction electrode in an ion beam apparatus

[0210] 303 condenser lens

[0211] 304 second objective

[0212] 306 adjustable or selectable diaphragm

[0213] 307 first electrode arrangement

[0214] 308 second electrode arrangement

[0215] 400 particle beam apparatus with corrector unit

[0216] 401 particle beam column

[0217] 402 electron source

[0218] 403 extraction electrode

[0219] 404 anode

[0220] 405 first electrostatic lens

[0221] 406 second electrostatic lens

[0222] 407 third electrostatic lens

[0223] 408 magnetic deflection unit

[0224] 409 first electrostatic beam deflection unit

[0225] 409A first multipole unit

[0226] 409B second multipole unit

[0227] 410 beam deflection device

[0228] 411A first magnetic sector

[0229] 411B second magnetic sector

[0230] 411C third magnetic sector

[0231] 411D fourth magnetic sector

[0232] 411E fifth magnetic sector

[0233] 411F sixth magnetic sector

[0234] 411G seventh magnetic sector

[0235] 413A first mirror electrode

[0236] 413B second mirror electrode

[0237] 413C third mirror electrode

[0238] 414 electrostatic mirror

[0239] 415 fourth electrostatic lens

[0240] 416 second electrostatic beam deflection unit

[0241] 416A third multipole unit

[0242] 416B fourth multipole unit

[0243] 417 third electrostatic beam deflection unit

[0244] 418 fifth electrostatic lens

[0245] 418A fifth multipole unit

[0246] 418B sixth multipole unit

[0247] 419 first analysis detector

[0248] 420 beam guiding tube

[0249] 421 objective

[0250] 422 magnetic lens

[0251] 423 sixth electrostatic lens

[0252] 424 object stage

[0253] 425 object

[0254] 426 sample chamber

[0255] 427 detection beam path

[0256] 428 second analysis detector

[0257] 429 scanning device

[0258] 432 further magnetic deflection element

[0259] 500 chamber detector

[0260] 600 first moving element

[0261] 601 housing

[0262] 602 second moving element

[0263] 603 first rotation axis of the stage

[0264] 604 third moving element

[0265] 605 fourth moving element

[0266] 606 fifth moving element

[0267] 607 second rotation axis of the stage

[0268] 608 drive control unit

[0269] 709 first beam axis

[0270] 710 second beam axis

[0271] M1 first drive unit

[0272] M2 second drive unit

[0273] M3 third drive unit

[0274] M4 fourth drive unit

[0275] M5 fifth drive unit

[0276] OA optical axis

[0277] OA1 first optical axis

[0278] OA2 second optical axis

[0279] OA3 third optical axis

[0280] S1 and S2 method steps

[0281] S3A method step

[0282] S3B method step

[0283] S3Q method step

[0284] S3QB method step

Claims

1. A method of operating a particle beam apparatus (100, 200, 400) for imaging, processing and / or analyzing an object (125, 425), wherein, The method comprises the following method steps: - providing control data for the relative positioning of a particle beam of the particle beam device (100, 200, 400) with respect to the object (125, 425) by (a) retrieving the control data from a storage unit (126) into a control unit (123) of the particle beam device (100, 200, 400) and / or (b) entering the control data into the control unit (123) of the particle beam device (100, 200, 400) by a user of the particle beam device (100, 200, 400), wherein the control data comprises information about a magnification value and information about a velocity value, wherein the magnification value describes a ratio between a real size of the object (125, 425) and a represented size of the object (125, 425) on a display unit (124), and wherein the velocity value describes a change per unit of time of a position of the object (125, 425) with respect to an optical axis (OA, OA1, OA2, OA3) of the particle beam device (100, 200, 400); - transforming, using the control unit (123), the provided control data into actuation data for actuating a movable object carrier (114, 122, 424) or for actuating a deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432) of the particle beam device (100, 200, 400), wherein the transformation is performed using values about (a) a current orientation of the object (125, 425), (b) a current scanning direction of a particle beam of the particle beam device (100, 200, 400) on the object (125, 425), (c) a current velocity of the object (125, 425) and / or (d) the velocity value from the control data, and wherein the actuation data comprises information about the magnification value and about an actuation velocity value, wherein the actuation velocity value describes an actual velocity of the movable object carrier (114, 122, 424) during a movement of the movable object carrier (114, 122, 424) from a current position to a position that can be predefined by the control data; - using the actuation data to perform a relative movement of the object (125, 425) and a field of view of the particle beam device (100, 200, 400) relative to each other, wherein the field of view is designed such that the field of view comprises a region of a scanning process, and wherein, if (i) the magnification value is smaller than a predefinable magnification threshold value, if (ii) the magnification value is identical to the predefinable magnification threshold value, if (iii) the actuation speed value is larger than a predefinable speed threshold value, and / or if (iv) the actuation speed value is identical to the predefinable speed threshold value, the relative movement is achieved by adapting a position of the object (125, 425) using the movable object carrier (114, 122, 424); or if (a) the magnification value exceeds the predefinable magnification threshold value, and if (b) the actuation speed value drops below the predefinable speed threshold value, the relative movement is achieved by adapting a deflection of a particle beam of the particle beam device (100, 200, 400) using the deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432).

2. The method according to claim 1, wherein - providing control data for a relative positioning of a particle beam of the particle beam device (100, 200, 400) relative to the object (125, 425) is achieved by (a) retrieving the control data from the storage unit (126) into a control unit (123) of the particle beam device (100, 200, 400) and / or (b) entering the control data into the control unit (123) of the particle beam device (100, 200, 400) by a user of the particle beam device (100, 200, 400), wherein the control data comprises (i) information about the magnification value and information about the speed value, or wherein the control data comprises (ii) information about a target position, wherein the target position describes a relative positioning of a particle beam of the particle beam device (100, 200, 400) relative to the object (125, 425); - transforming the provided control data into actuation data for actuating the movable object carrier (114, 122, 424) or for actuating a deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432) of the particle beam device (100, 200, 400) is achieved using the control unit (123), wherein the transformation is performed using values related to (a) the current orientation of the object (125, 425), (b) the current scanning direction of the particle beam of the particle beam device (100, 200, 400) on the object (125, 425), (c) the current velocity of the object (125, 425), (d) a velocity value from the control data and / or (e) a target position from the control data, and wherein the actuation data comprises (i) information about the magnification value and about the actuation velocity value, and / or wherein the actuation data comprises (ii) information about a working distance difference and a deflection modulation range difference, wherein the working distance difference describes a difference between a current working distance and a working distance at the site that can be predefined by the control data, and wherein the deflection modulation range difference describes a difference between a current deflection modulation range and a deflection modulation range at the site that can be predefined by the control data; and wherein - performing the relative movement of the object (125, 425) and the field of view of the particle beam device (100, 200, 400) relative to each other is achieved using the actuation data, wherein if (i) the magnification value is smaller than the predefinable magnification threshold value, if (ii) the magnification value is identical to the predefinable magnification threshold value, if (iii) the actuation velocity value is greater than the predefinable velocity threshold value, if (iv) the actuation velocity value is identical to the predefinable velocity threshold value, if (v) the working distance difference exceeds a predefinable working distance difference, if (vi) the working distance difference is identical to the predefinable working distance difference, if (vii) the deflection modulation range difference exceeds a predefinable deflection modulation range difference, and / or if (viii) the deflection modulation range difference is identical to the predefinable deflection modulation range difference, the relative movement is achieved by adapting the position of the object (125, 425) using the movable object carrier (114, 122, 424); or If (a) the magnification value exceeds the predefinable magnification threshold, if (b) the actuation speed value falls below the predefinable speed threshold, if (c) the working distance difference falls below the predefinable working distance difference, and if (d) the deflection modulation range difference falls below the predefinable deflection modulation range difference, the deflection of the particle beam of the particle beam device (100, 200, 400) is adapted by using the deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432) to achieve the relative movement.

3. The method according to claim 1 or 2, wherein, - when adapting the position of the object (125, 425) using the movable object carrier (114, 122, 424), the movable object carrier (114, 122, 424) is configured to perform at least one translational movement in at least one spatial direction; and / or wherein, - when adapting the position of the object (125, 425) using the movable object carrier (114, 122, 424), the movable object carrier (114, 122, 424) is configured to perform at least one pivotal movement about at least one axis of rotation (603, 607).

4. The method of at least one of claims 1 to 3, wherein, For adapting a deflection of a particle beam of the particle beam device (100, 200, 400), a guiding device (104, 105, 106, 107, 108, 109, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 432) of the particle beam device (100, 200, 400) is used as the deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432).

5. Computer program product having program code, which, when loaded into a processor unit (127) of a particle beam device (100, 200, 400) and executed, controls the particle beam device (100, 200, 400) such that the method according to at least one of the preceding claims is performed.

6. Particle beam device (100, 200, 400) for imaging, processing and / or analyzing an object (125, 425), the particle beam device comprising - at least one beam generator (101, 301, 402) for generating at least one particle beam comprising charged particles; - at least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interaction particles and / or interaction radiation emitted by an interaction of the particle beam with the object (125, 425) when the particle beam is incident on the object (125, 425); - at least one movable object carrier (122, 424) for moving the object (125, 425); - at least one deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432) for deflecting the particle beam; - at least one control unit (123) for receiving control data, for actuating the movable object carrier (122, 424) and / or for actuating the deflection device (104, 105, 106, 107, 108, 109, 115, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 429, 432); - at least one display unit (124) for presenting data; - at least one storage unit (126) for storing data; and - at least one processor unit (127) into which the computer program product according to claim 5 is loaded.

7. The particle beam apparatus (100, 200, 400) of claim 6, comprising: at least one guiding device (104, 105, 106, 107, 108, 109, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 432) for guiding, shaping and / or focusing a particle beam comprising charged particles on the object (125, 425), wherein the guiding device (104, 105, 106, 107, 108, 109, 304, 306, 307, 308, 401, 405, 406, 407, 408, 409, 409A, 409B, 410, 410A, 410B, 410C, 410D, 410E, 410F, 410G, 411A, 411B, 411C, 411D, 411E, 411F, 411G, 413A, 413B, 413C, 414, 415, 416, 416A, 416B, 417, 418, 418A, 418B, 420, 421, 422, 423, 432) is arranged in and / or on a beam column (104, 401, 420) of the particle beam device (100, 200, 400).

8. The particle beam device (200) according to claim 6 or 7, wherein The beam generator (101) is embodied as a first beam generator, wherein the particle beam is embodied as a first particle beam comprising first charged particles, wherein the deflection device (104, 105, 106, 107, 108, 109, 115) for deflecting the particle beam is embodied as a first deflection device (104, 105, 106, 107, 108, 109, 115) for deflecting the first particle beam onto the at least one object (125), and wherein the particle beam device (200) further comprises: at least one second beam generator (301) for generating at least one second particle beam comprising second charged particles; and at least one second deflection device (304, 306, 307, 308) for deflecting the at least one second particle beam onto the at least one object (125).

9. The particle beam apparatus (100, 200, 400) according to any one of claims 6 to 8, wherein, The particle beam device (100, 200, 400) is an electron beam device and / or an ion beam device.

Images