Semiconductor device and method for manufacturing a semiconductor device

Abstract

Semiconductor device comprising: - a semiconductor substrate (5) of a first conductivity type in which a cell region (1), a ballast resistance region (1a) being a region that is an outer edge of the cell region (1), and a termination region (2) surrounding the ballast resistance region (1a) are defined; - a first insulating film (9) arranged on a front surface of the semiconductor substrate (5), having a first opening (6a) in the cell region (1) and having at least a second opening (6b) in the ballast resistance region (1a); - a second insulating film (10) filled into the at least one second opening (6b); - a first impurity layer (7a) of a second conductivity type arranged on the front surface of the semiconductor substrate (5) below the first opening (6a);- a second defect layer (7b) of the second conductivity type, arranged on the front surface of the semiconductor substrate (5) below the at least one second opening (6b); and - a conductive film (11) arranged from the front surface of the first opening (6a) of the semiconductor substrate (5) to the termination region (2).

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