DISPLAY DEVICE

Abstract

An indicator device of an embodiment of the disclosure comprises a substrate comprising a display area and an optical area surrounded by the display area and having a through-hole, a dam arranged in the optical area on the substrate and designed to surround the through-hole, several connection-prevention elements arranged in the optical area on the substrate and positioned closer to the through-hole than the dam, and a metal pattern arranged between the several connection-prevention elements. This makes it possible to improve the visibility of the optical area.

Description

[0001] This application claims priority over Korean patent application No. 10-2024-0116379, which was filed with the Korean Patent Office on August 29, 2024. BACKGROUND area

[0002] The disclosure relates to a display device and in particular to a display device that can improve visibility in an area where a through-hole is arranged. Description of the related technique

[0003] Display devices that visually represent electrical information are rapidly evolving with the advent of the information age. Various studies are continuously being conducted to develop a wide range of display devices that are thin and lightweight, consume little power, and offer improved performance.

[0004] Representative display devices include liquid crystal displays (LCDs), field emission displays (FEDs), electrowetting displays (EWDs), organic light-emitting displays (OLEDs), and the like.

[0005] An electroluminescent display (EMD), as a representative organic light-emitting display, refers to a display device that emits light independently. Unlike a liquid crystal display, the EMD does not require a separate light source and can therefore be manufactured as a lightweight, thin display. The EMD offers advantages in terms of power consumption because it operates at a low voltage. Furthermore, the EMD is expected to be used in various fields due to its excellent properties regarding color reproduction, response time, viewing angles, and contrast ratio (CR). SUMMARY

[0006] One task is to provide a display device that can improve visibility in an area where a through-hole is located.

[0007] Another task is to provide a display device that can improve image quality by reducing light blur, particularly in an area where a through-hole is located.

[0008] Another task is to provide a display device that can suppress the ingress of moisture from the outside through a through-hole, thereby preventing damage to a light-emitting element.

[0009] The problem is solved by the features of the independent claims. Preferred embodiments are specified in the dependent claims.

[0010] A display device of an embodiment of the disclosure comprises a substrate comprising a display area and an optical area surrounded by the display area and having a through-hole, a dam arranged in the optical area on the substrate and designed to surround the through-hole, several connection-prevention elements arranged in the optical area on the substrate and located closer to the through-hole than the dam, and a metal pattern arranged between the several connection-prevention elements.

[0011] A display device of a further embodiment of the disclosure comprises: a substrate comprising a display area and an optical area surrounded by the display area and having a through-hole; a light-emitting element arranged in the display area on the substrate and comprising an anode, a light-emitting layer and a cathode; an encapsulation part arranged on the light-emitting element and comprising a first inorganic encapsulation layer, an organic encapsulation layer arranged on the first inorganic encapsulation layer and a second inorganic encapsulation layer arranged on the organic encapsulation layer;a touch sensing element arranged on the encapsulation layer and comprising a touch buffer layer, a first electrode arranged on the touch buffer layer, a touch interlayer insulating layer arranged on the first electrode, and a second electrode arranged on the touch interlayer insulating layer; a dam designed to surround the through-hole in the optical area on the substrate; several connection-prevention elements arranged to be closer to the through-hole in the optical area on the substrate than the dam; and a metal pattern arranged between the several connection-prevention elements.

[0012] In one or more embodiments, the display device may further comprise a light-emitting element arranged in the display area, comprising an anode, a light-emitting layer and a cathode.

[0013] In one or more embodiments, the multiple connection-prevention parts can each comprise a first layer and a second layer arranged on top of the first layer.

[0014] In one or more embodiments, the first layer and the second layer can each have a tapered shape.

[0015] In one or more embodiments, an upper surface of the first layer can be narrower than a lower surface of the second layer.

[0016] In one or more embodiments, the light-emitting layer can extend to the optical area and is interrupted in the optical area by the multiple connection-prevention parts.

[0017] In one or more embodiments, the display device may further comprise an inorganic insulating layer arranged on the multiple connection-prevention parts.

[0018] In one or more embodiments, the inorganic insulating layer can have a shape comprising several convex sections designed to overlap the multiple connection-prevention parts.

[0019] In one or more embodiments, several concave sections can be designed so that they do not overlap the multiple connection prevention parts.

[0020] In one or more embodiments, the metal pattern can be arranged on the inorganic insulating layer.

[0021] In one or more embodiments, the metal pattern can protrude into the inorganic insulating layer.

[0022] In one or more embodiments, the metal pattern can be designed as multiple metal patterns arranged on the multiple concave sections and spaced apart from each other.

[0023] In one or more embodiments, the multiple concave sections can be positioned between the multiple connection prevention parts.

[0024] In one or more embodiments, the multiple concave sections can further be positioned between the multiple connection-prevention parts and the dam, as well as between the multiple connection-prevention parts and the through-hole.

[0025] In one or more embodiments, an upper surface of the metal pattern can be arranged on the same plane as the upper surfaces of the multiple convex sections.

[0026] In one or more embodiments, the metal pattern can be arranged such that it covers all of the multiple concave sections and the multiple convex sections.

[0027] In one or more embodiments, the metal pattern can be arranged along a shape of an upper surface of the inorganic insulating layer.

[0028] In one or more embodiments, the metal pattern can be shaped such that the metal pattern is connected to the metal pattern arranged on the multiple convex sections of the inorganic insulating layer.

[0029] In one or more embodiments, the metal pattern can be arranged on the multiple concave sections of the inorganic insulating layer.

[0030] In one or more embodiments, the metal pattern can be arranged to extend to an upper section of the dam.

[0031] In one or more embodiments, the display device may further comprise an encapsulation part that is arranged on the light-emitting element.

[0032] In one or more embodiments, the encapsulation part can comprise a first inorganic encapsulation layer, an organic encapsulation layer on top of the first inorganic encapsulation layer, and a second inorganic encapsulation layer on top of the organic encapsulation layer.

[0033] In one or more embodiments, the display device may further comprise a touch detection element arranged on the encapsulation element.

[0034] In one or more embodiments, the touch sensing part may comprise a touch buffer layer arranged on the encapsulation layer, a first electrode arranged on the touch buffer layer, a touch interlayer insulating layer arranged on the first electrode, and a second electrode arranged on the touch interlayer insulating layer.

[0035] In one or more embodiments, the inorganic insulating layer can comprise at least one of the first inorganic encapsulation layer, the second inorganic encapsulation layer, the contact buffer layer, and the contact intermediate layer insulating layer.

[0036] In one or more embodiments, the metal pattern can be made of the same material as the second electrode.

[0037] In one or more embodiments, the first electrode can be designed as multiple contact connection electrodes and the second electrode can be designed as multiple contact electrodes.

[0038] In one or more embodiments, the display device may further comprise a black matrix arranged on the touch detection part in the optical area.

[0039] In one or more embodiments, the metal pattern can be arranged in an area that overlaps the black matrix.

[0040] In one or more embodiments, the display device may further comprise an optical electronic device arranged to overlap the optical area.

[0041] In one or more embodiments, the metal pattern can be made of the same material as the second electrode.

[0042] In one or more embodiments, the display device may further comprise an inorganic insulating layer arranged on the multiple connection-prevention parts.

[0043] In one or more embodiments, the inorganic insulating layer can comprise at least one of the first inorganic encapsulation layer, the second inorganic encapsulation layer, the contact buffer layer, and the contact intermediate layer insulating layer.

[0044] In one or more embodiments, the inorganic insulating layer may have a shape comprising several convex sections designed to overlap the multiple connection-prevention parts and several concave sections designed to not overlap the multiple connection-prevention parts.

[0045] In one or more embodiments, the metal pattern can be arranged on the inorganic insulating layer.

[0046] In one or more embodiments, the metal pattern can be designed as several metal patterns arranged on several concave sections and spaced apart from each other.

[0047] In one or more embodiments, an upper surface of the metal pattern can be arranged on the same plane as the upper surfaces of the multiple convex sections.

[0048] In one or more embodiments, the metal pattern can be arranged such that it covers all of the multiple concave sections and the multiple convex sections.

[0049] In one or more embodiments, the dams, the multiple connection-prevention parts and the metal pattern can each have a closed shape surrounding the through-hole.

[0050] In one or more embodiments, the through-hole can have a circular shape.

[0051] In one or more embodiments, the dam, the multiple connection-prevention elements, and the metal pattern can each be designed to define a concentric circle together with the through-hole. Further details of the exemplary embodiments are included in the detailed description and drawings.

[0052] According to the disclosure, the metal pattern is arranged between the multiple connection-prevention parts in the optical area where the through-hole is located, so that the upper surfaces of the multiple connection-prevention parts can be planarized.

[0053] According to the disclosure, the occurrence of refraction of the polarization plate, which is arranged on the upper surfaces of the several connection-prevention parts in the optical area, can be suppressed, so that the visibility of the display device can be improved.

[0054] According to the disclosure, the occurrence of refraction of the polarizing plate, which is arranged on the upper surfaces of the several connection-prevention parts in the optical area, can be suppressed, so that light blurring caused by the refraction of the polarizing plate can be suppressed and the image quality of the display device can be improved.

[0055] According to the disclosure, the light-emitting layers and the cathodes of the multiple light-emitting elements can be interrupted by the multiple connection-prevention parts in the optical area, so that a transmission path for intruded moisture is interrupted, even if moisture enters from the through-hole, and the deterioration of the multiple light-emitting elements caused by the intruded moisture can be suppressed.

[0056] The effects according to the revelation are not limited to the content mentioned above as an example, and the revelation contains a wider variety of effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] The above-mentioned and other aspects, features and advantages of the present disclosure will become clearer through the following detailed description in conjunction with the accompanying drawings; they show: Fig. 1 a block diagram to illustrate a display device of an embodiment of the disclosure; Fig. 2 a schematic representation showing a circuit configuration of a subpixel of the embodiment; Fig. 3 a top view of the display device of the embodiment of the disclosure; Fig. 4 a sectional view along line IV-IV' in Fig. 3; Fig. 5 an enlarged top view of area A in Fig. 3; Fig. 6 a sectional view along line VI-VI' in Fig. 5; Fig. 7 a top view of a display device of a further embodiment of the disclosure; and Fig. 8 a sectional view along line VIII-VIII' in Fig. 7. DETAILED DESCRIPTION OF THE EXECUTION FORM

[0058] The advantages and features of the disclosure and a method for achieving these advantages and features will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the disclosure is not limited to the embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments serve only as examples to enable those skilled in the art to fully understand the disclosures and the scope of the disclosure.

[0059] The shapes, sizes, ratios, angles, numbers, and the like shown in the accompanying drawings to describe exemplary embodiments of the disclosure are merely examples, and the disclosure is not limited to them. The same reference numerals generally denote the same elements throughout the entire description. Furthermore, a detailed explanation of known related technologies may be omitted from the following description of the disclosure in order to avoid unnecessarily obscuring the subject matter of the disclosure. The terms used herein, such as "comprise," "have," and "consist of," are generally intended to permit the addition of other components, unless the terms are used with the term "only." All singular references may include the plural unless expressly stated otherwise.

[0060] Components are designed to cover a typical error range, even if this is not explicitly stated.

[0061] When the positional relationship between two parts is described using terms such as "on", "above", "below" and "next to", one or more parts may be positioned between the two parts unless the terms are used with the term "immediately" or "directly".

[0062] If one element or layer is placed “on” another element or layer, that other layer or element can be placed directly on top of the other element or in between.

[0063] Although the terms "first," "second," and the like are used to describe different components, these components are not restricted by these terms. These terms are merely used to distinguish one component from the others. Therefore, a first component mentioned below may be a second component in a technical concept disclosed.

[0064] The same reference symbols generally denote identical elements throughout the entire description.

[0065] The size and thickness of each component shown in the drawing are shown for the convenience of description and the disclosure is not limited to the size and thickness of the component shown.

[0066] The features of different embodiments of the disclosure can be partially or completely linked or combined with one another and can be linked and operated in technically different ways, and the embodiments can be carried out independently of one another or in conjunction with one another.

[0067] The following section describes various exemplary embodiments of the disclosure in detail with reference to the accompanying drawings.

[0068] Fig. Figure 1 is a block diagram of a display device of an embodiment of the disclosure.

[0069] With reference to Fig. 1 A display device can comprise an image processor 161, a timing controller 162, a data driver 163, a scanning driver 164 and a display panel PN.

[0070] The image processor 161 can output a data signal DATA, a data release signal DE and the like, which are supplied from the outside.

[0071] For example, in addition to the data release signal DE, the image processor 161 can output one or more vertical synchronization signals, horizontal synchronization signals and clock signals.

[0072] In addition to the data release signal DE or the control signals, which include the vertical synchronization signal, the horizontal synchronization signal, and the clock signal from the image processor 161, the timing controller 162 can receive the data signal DATA. Based on the control signal, the timing controller 162 can output a gate timing signal GDC to control an operating time setting of the sampler driver 164 and a data timing signal DDC to control an operating time setting of the data driver 163.

[0073] In response to the data timing signal DDC supplied by the timing controller 162, the data driver 163 can sample and buffer the data signal DATA supplied by the timing controller 162, convert the data signal DATA into a gamma reference voltage, and output the gamma reference voltage. The data driver 163 can output the data signal DATA via data lines DL1 to DLn. The data driver 163 can be implemented as an integrated circuit (IC).

[0074] The sampling driver 164 can output the sampling signal in response to the gate timing signal GDC supplied by the timing controller 162. The sampling driver 164 can output the sampling signal via the gate lines GL1 to GLm. The sampling driver 164 can be provided as an integrated circuit (IC) or implemented on the display panel PN in a gate-in-panel (GIP) configuration.

[0075] The display panel PN can display an image in response to the DATA data signal and the sampling signal supplied from the data driver 163 and the sampling driver 164.

[0076] The PN display panel can include subpixels SP designed to display images. The PN display panel is described below. Fig. 3 described in detail.

[0077] For example, the subpixels SP can comprise a red, a green, and a blue subpixel, or a white, a red, a green, and a blue subpixel. Depending on their luminescence properties, one or more of the subpixels SP can have one or more distinct light-emitting areas.

[0078] Fig. Figure 2 is a schematic representation of a circuit configuration of the subpixel of the embodiments of the disclosure.

[0079] With reference to Fig. 2. A subpixel can include a switching transistor SW, a drive transistor DT, a capacitor Cst, a compensation circuit CC, and a light-emitting element ED.

[0080] For example, the switching transistor SW can operate such that a data signal supplied via a first data line DL1 is stored as a data voltage in the capacitor Cst in response to a sampling signal supplied via a first gate line GL1. For example, the driver transistor DT can operate such that a drive current flows between a first power line EVDD (high potential voltage) and a second power line EVSS (low potential voltage), according to the data voltage stored in the capacitor Cst. The light-emitting element ED can operate such that it emits light according to a drive current generated by the driver transistor DT.

[0081] The compensation circuit CC refers to a circuit added to the subpixel to compensate for a threshold voltage of the drive transistor DT or similar. The compensation circuit CC can comprise one or more transistors. Depending on the external compensation method, the configuration of the compensation circuit CC can vary considerably.

[0082] The in Fig. The subpixel shown has a 2T1C structure (1-transistor-1-capacitor structure) comprising the switching transistor ST, the drive transistor DT, the capacitor Cst, and the light-emitting element ED. However, if the compensation circuit CC is added, the subpixel can have various configurations such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C, or the like.

[0083] Fig. Figure 3 is a top view of the display device of the embodiment. For the sake of simplicity, the description is shown below. Fig. 3 only the display panel PN and a data driver D-IC among the various components of the display device 100.

[0084] The display panel PN can have a display area AA, optical areas OA surrounded by the display area AA and having one or more through-holes TH, and a non-display area NA designed to at least partially or completely surround the display area AA.

[0085] The AA display area is an area of ​​the PN display board where images are displayed.

[0086] The multiple subpixels SP and a circuit for operating the multiple subpixels SP can be arranged within the display area AA. The multiple subpixels SP can be minimal units that constitute the display area AA. Display elements can be arranged within each of the multiple subpixels SP. For example, an organic light-emitting element comprising an anode, a light-emitting layer, and a cathode can be arranged within each of the multiple subpixels SP. However, the disclosure is not limited to this. The circuit designed to operate the multiple subpixels SP can include drive elements, lines, and the like. For example, the circuit can include a thin-film transistor, a storage capacitor, a gate line, a data line, and the like. However, other circuit elements or pixel circuit arrangements are also possible.

[0087] The optical area OA is an area that is at least partially located within the display area AA, preferably surrounded by the display area AA, and has the through-hole TH. The through-hole TH can be located within the display area AA of the display panel PN, thereby reducing a border area, which is the non-display area NA, and maximizing the display area AA. A design product with a maximized display area AA maximizes the user's level of screen immersion and thus improves the aesthetic appearance.

[0088] The through-hole TH can be configured to accommodate an electronic optical device. The electronic optical device can be a device that receives light passing through the display panel PN and performs a predetermined function in response to the received light. Therefore, the electronic optical device can be arranged to overlap the through-hole TH of the display panel PN. For example, the electronic optical device can be configured as one or more cameras and / or one or more different sensors. However, the disclosure is not limited to this. The electronic optical device can include any devices that perform predetermined functions in response to the light. Since the electronic optical device is located below the display panel PN, it may not be visually detectable by the user.If the electronic optical device is, for example, a camera, the camera is located on the rear surface of the display panel PN. However, the camera can capture an image of the front surface of the display device 100 instead of the rear surface of the display device 100.

[0089] Fig. Figure 3 shows two through-holes TH. However, the disclosure is not limited to these. The number of through-holes TH can vary. For example, one or two through-holes may be arranged in the display area AA. A camera may be arranged in a first through-hole, and a distance sensing sensor, a face recognition sensor, or a wide-angle camera may be arranged in a second through-hole.

[0090] The non-display area (NA) is an area where no image is displayed. Various lines, circuitry, and other components for operating the display elements in the display area (AA) are located in the non-display area (NA). For example, the non-display area (NA) may include interconnect lines for transmitting signals to the multiple subpixels and the circuitry in the display area (AA). The non-display area (NA) may also include gate-in-board (GIP) lines or driver ICs such as the gate driver and the data driver.

[0091] The non-display area NA can be an area extending from the display area AA. The non-display area NA can be an area surrounding the display area AA.

[0092] The non-display area NA comprises a first non-display area NA1, a bending area BA, and a second non-display area NA2. The first non-display area NA1 is an area extending from and surrounding the display area AA. The bending area BA can be an area extending from one side of the first non-display area NA1 and bent. The second non-display area NA2 can be an area extending from the bending area BA and located below the display area AA.

[0093] The first non-display area NA1 and the second non-display area NA2 can be areas arranged on the same plane as the display area AA or parallel to the display area AA and held in a flat state. For example, the first non-display area NA1 can be arranged flat on the same plane as the display area AA, and the second non-display area NA2 can be arranged flat below and parallel to the display area AA. Therefore, for example, the display area AA, the first non-display area NA1, and the second non-display area NA2 can be described as non-bendable areas.

[0094] The driver IC D-IC can be located in the second non-display area NA2. The driver IC D-IC can be a data driver designed to supply the data signal to the multiple subpixels SP. For example, a contact point part can be located in the second non-display area NA2 where the driver IC D-IC is located, and a printed circuit board electrically connected to the contact point part can further be located and supply a signal to the driver IC D-IC. However, the disclosure is not limited to this.

[0095] The driver IC D-IC can be in chip-on-board (COP) form and located on one side of the display board PN and connected to the display board PN. Alternatively, the driver IC D-IC can be provided in chip-on-film (COF) form, mounted on a separate flexible film and connected to the display board PN.

[0096] When the bending area BA is bent, the driver IC D-IC located in the second non-display area NA2 is below the display area AA. For example, the driver IC D-IC and the circuit board connected to the contact point portion of the display panel PN may move to a rear surface of the display panel PN and overlap the display area AA. Therefore, circuit elements such as the driver IC D-IC and the circuit board may not be visually detectable when viewing the display panel PN from above. Consequently, the size of the non-display area NA, which is visually detectable from above the display panel PN, can be reduced to allow for a narrower bezel.

[0097] The display device 100 may further include various additional elements designed to generate different signals or to operate a pixel in the display area AA. The additional elements for operating the pixel may include an inverter circuit, a multiplexer, an electrostatic discharge (ESD) circuit, and the like. The display device 100 may also include additional elements relating to functions other than operating the pixel. For example, the display device 100 may further include additional elements providing a touch detection function, a user certification function (e.g., fingerprint recognition), a multi-level pressure detection function, a tactile feedback function, and the like.The above-mentioned additional elements can be positioned in the non-display area NA and / or in an external circuit connected via a link interface.

[0098] The following is a cross-sectional structure of the display device 100 with reference to Fig. 4 described in more detail.

[0099] Fig. 4 is a cross-sectional view along line IV-IV' in Fig. 3.

[0100] With joint reference to Fig. 3 and Fig. 4 The display device 100 of the embodiment can comprise the display panel PN, a connecting layer Adh and a polarization layer 130.

[0101] The display panel PN can comprise a substrate 110, a first buffer layer 111, a first thin-film transistor TR1, a second thin-film transistor TR2, a first gate insulating layer 112a, a first intermediate insulating layer 113a, a second buffer layer 114, a second gate insulating layer 112b, a second intermediate insulating layer 113b, a connecting electrode CE, a first planarization layer 115a, a second planarization layer 115b, an auxiliary electrode 145, a bank 116a, optionally a spacer 116b, an anode E1, a light-emitting layer EL, a cathode E2, an encapsulation part 117, a touch sensing part, a first organic layer 119a and a second organic layer 119b.

[0102] The substrate 110 serves to support and protect the components of the flexible display device that are arranged above the substrate 110.

[0103] The substrate 110 is a component for supporting various parts contained in the display device 100 and may be made of an insulating material. The substrate 110 may comprise a first substrate 110a, a second substrate 110b, and an intermediate insulating film 110c. The intermediate insulating film 110c may be positioned between the first substrate 110a and the second substrate 110b. As described above, the substrate 110 is formed from the first substrate 110a, the second substrate 110b, and the intermediate insulating film 110c, which prevents the ingress of moisture. For example, the first substrate 110a and the second substrate 110b can each be a polyimide substrate (PI substrate), and the interlayer insulating film 110c can be formed as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or as a multilayer comprising the above-mentioned layers.

[0104] A light-blocking layer LS can be arranged on the substrate 110.

[0105] The first buffer layer 111 can be arranged on the substrate 110 and simultaneously cover the light-blocking layer LS. In particular, a multiple buffer layer 111a can be arranged on the substrate 110 and simultaneously cover the light-blocking layer LS, and an active buffer layer 111b can be arranged on the multiple buffer layer 111a.

[0106] The multiple buffer layer 111a can delay the diffusion of moisture or oxygen that has penetrated the substrate 110 and contains silicon nitride (SiNx) and / or silicon oxide (SiOx).

[0107] The active buffer layer 111b can protect a first active layer A1 and suppress various types of defects introduced from the substrate 110. For example, the active buffer layer 111b can contain α-Si, silicon nitride (SiNx) and / or silicon oxide (SiOx).

[0108] The first thin-film transistor TR1 can be located on the first buffer layer 111. The first thin-film transistor TR1 can comprise the first active layer A1, a first gate electrode G1, a first source electrode S1, and a first drain electrode D1. In this case, according to the pixel circuit design, the first source electrode S1 can be a first drain electrode, and the first drain electrode D1 can be a first source electrode.

[0109] The first active layer A1 can be arranged on the first buffer layer 111 such that it overlaps the light-blocking layer LS. The first active layer A1 can contain amorphous silicon or polysilicon (polycrystalline silicon). For example, the first active layer A1 can contain low-temperature polysilicon (LTPS). Since a polysilicon material, for example, exhibits high mobility (100 cm² / Vs or more), low power consumption, and excellent reliability, the polysilicon material can be applied to gate drivers and / or multiplexers (MUXs) for driving elements to operate thin-film transistors for display elements. In the display device 100 of the embodiment of the disclosure, the polysilicon material can be applied to a first active layer A1 of the switching thin-film transistor. However, the disclosure is not limited to this.For example, depending on the properties of the display device 100, the polysilicon material can also be applied to a second active layer A2 of the driver thin-film transistor. The first active layer A1 can be formed by depositing an amorphous silicon material (a-Si material) onto the first buffer layer 111, forming polysilicon through a dehydration process and a crystallization process, and subsequently structuring the polysilicon. In this case, the first active layer A1 can comprise a first channel region, in which a channel is formed when the first thin-film transistor TR1 operates, and a first source region and a first drain region, which are arranged on two opposite sides of the first channel region.The first source region refers to a section of the first active layer A1 that is connected to the first source electrode S1, and the first drain region refers to a section of the first active layer A1 that is connected to the first drain electrode D1. For example, the first source region and the first drain region can be formed by doping the first active layer A1 with ions (foreign substances). The first source region and the first drain region can also be formed by doping the polysilicon material with ions. The first channel region can refer to a section where the polysilicon material remains undoed.

[0110] The first gate insulating layer 112a can be arranged on the first active layer A1. The first gate insulating layer 112a can be a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or a multilayer comprising the aforementioned layers. The first gate insulating layer 112a can have contact holes through which the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1 are connected, respectively, to the first source region and the first drain region of the first active layer A1 of the first thin-film transistor TR1.

[0111] The first gate electrode G1 of the first thin-film transistor TR1 and a first capacitor electrode C1 of a storage capacitor Cst can be arranged on the first gate insulating layer 112a.

[0112] In this case, the first gate electrode G1, a gate metal GM (as in Fig. (shown in Figure 6) and the first capacitor electrode C1 may be configured as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. The first gate electrode G1 may be configured on the first gate insulating layer 112a such that it overlaps the first channel region of the first active layer A1 of the first thin-film transistor TR1.

[0113] The first capacitor electrode C1 can be omitted based on the operating characteristics of the indicator device 100 and the structure, type, and other features of the thin-film transistor. The first gate electrode G1 and the first capacitor electrode C1 can be formed using the same process. Furthermore, the first gate electrode G1 and the first capacitor electrode C1 can be made of the same material and formed on the same layer.

[0114] The first interlayer insulating layer 113a can be arranged above the first gate insulating layer 112a, the first gate electrode G1, and the first capacitor electrode C1. The first interlayer insulating layer 113a can be a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or a multiple layer comprising the aforementioned layers. Furthermore, the first interlayer insulating layer 113a can have a contact hole through which the first source region and the first drain region of the first active layer A1 of the first thin-film transistor TR1 are exposed.

[0115] A second capacitor electrode C2 of the storage capacitor Cst can be arranged on the first intermediate insulating layer 113a. The second capacitor electrode C2 can be formed as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), or an alloy thereof. The second capacitor electrode C2 can be formed on the first intermediate insulating layer 113a such that it overlaps the first capacitor electrode C1. The second capacitor electrode C2 can be made of the same material as the first capacitor electrode C1. The second capacitor electrode C2 can be omitted based on the operating characteristics of the display device 100 and the structure, type, and other aspects of the thin-film transistor.

[0116] The second buffer layer 114 can be arranged on the first intermediate insulating layer 113a and the second capacitor electrode C2. The second buffer layer 114 can be a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or a multiple layer comprising the aforementioned layers. The second buffer layer 114 can have a contact hole through which the first source region and the first drain region of the first active layer A1 of the first thin-film transistor TR1 are exposed. The second buffer layer 114 can have a contact hole through which the second capacitor electrode C2 of the storage capacitor Cst is exposed.

[0117] The second buffer layer 114 can be configured as a multiple layer. However, the disclosure is not limited to this.

[0118] A second active layer A2 of the second thin-film transistor TR2 can be arranged on the second buffer layer 114. In this case, the second thin-film transistor TR2 can comprise the second active layer A2, the second gate insulating layer 112b, a second gate electrode G2, a second source electrode S2, and a second drain electrode D2. According to the pixel circuit design, the second source electrode S2 can be a drain electrode and the second drain electrode D2 can be a source electrode.

[0119] The second active layer A2 can comprise a second channel region, in which a channel is formed when the second thin-film transistor TR2 operates, and a second source region and a second drain region arranged on two opposite sides of the second channel region. The second source region can denote a section of the second active layer A2 connected to the second source electrode S2, and the second drain region can denote a section of the second active layer A2 connected to the second drain electrode D2.

[0120] The second active layer A2 can consist of an oxide semiconductor. The oxide semiconductor material has a larger bandgap than silicon and exhibits a low reverse current because electrons cannot pass through the bandgap in the off-state. Therefore, the thin-film transistor comprising the active layer made of the oxide semiconductor can be suitable for a switching thin-film transistor that maintains a short on-time and a long off-time. However, the disclosure is not limited to this. Depending on the characteristics of the display device 100, the oxide semiconductor can also be applied to the driver thin-film transistor. Since the oxide semiconductor material has a low reverse current and can reduce the amount of auxiliary capacitance, it is suitable for a high-resolution display element.For example, the second active layer A2 can consist of a metal oxide, such as various metal oxides like indium gallium zinc oxide (IGZO). In this case, the description is given assuming that the second active layer A2 of the second thin-film transistor TR2 consists of IGZO among various metal oxides. However, the disclosure is not limited to this. The second active layer A2 of the second thin-film transistor TR2 can consist of a different metal oxide instead of IGZO, such as indium zinc oxide (IZO), indium gallium tin oxide (IGTO), or indium gallium oxide (IGO).

[0121] The second active layer A2 can be formed by applying a metal oxide to the second buffer layer 114, performing a heat treatment process to stabilize it, and subsequently structuring the metal oxide.

[0122] The second gate insulating layer 112b can be arranged on the entire substrate 110, including the second active layer A2. For example, the second gate insulating layer 112b can be configured as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or as a multilayer comprising the aforementioned layers.

[0123] The second gate electrode G2 can be arranged on the second gate insulating layer 112b.

[0124] The second gate electrode G2 can be formed as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd) or an alloy thereof.

[0125] For example, the second gate electrode G2 is formed by forming a metallic material on the second gate insulating layer 112b, forming a photoresist pattern on the metallic material, and subsequently wet-etching the metallic material using the photoresist pattern as a mask. A wet etching fluid can be used for etching the metallic material that selectively etches molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof, of which the metallic material is composed, while not etching the insulating material.

[0126] The second interlayer insulating layer 113b can be arranged on the second gate insulating layer 112b and the second gate electrode G2. The second interlayer insulating layer 113b can have a contact hole through which the first active layer A1 of the first thin-film transistor TR1 and the second active layer A2 of the second thin-film transistor TR2 are exposed. For example, the second interlayer insulating layer 113b can have a contact hole through which the first source region and the first drain region of the first active layer A1 of the first thin-film transistor TR1 are exposed. The second interlayer insulating layer 113b can have a contact hole through which the second source region and the second drain region of the second active layer A2 of the second thin-film transistor TR2 are exposed.

[0127] The second intermediate insulating layer 113b can be formed as a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or as a multiple layer comprising the above-mentioned layers.

[0128] The connecting electrode CE, the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1, as well as the second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2, can be arranged on the second interlayer insulating layer 113b.

[0129] The connecting electrode CE can be electrically connected to the second drain electrode D2 of the second thin-film transistor TR2. Furthermore, the connecting electrode CE can be electrically connected to the second capacitor electrode C2 of the storage capacitor Cst via contact holes formed in the second buffer layer 114 and the second intermediate insulating layer 113b. That is, the connecting electrode CE can serve to electrically connect the second capacitor electrode C2 of the storage capacitor Cst and the second drain electrode D2 of the second thin-film transistor TR2.

[0130] In this case, the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1 can be connected to the first active layer A1 of the first thin-film transistor TR1 via contact holes formed in the first gate insulating layer 112a, the first intermediate layer insulating layer 113a, the second buffer layer 114 and the second intermediate layer insulating layer 113b.

[0131] The second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2 can be connected to the second active layer A2 via a contact hole formed in the second interlayer insulating layer 113b.

[0132] The connecting electrode CE, the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1, as well as the second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2, can be formed by the same process and made from the same material.

[0133] For example, the junction electrode CE, the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1, and the second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2 can each be configured as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. For example, the junction electrode CE, the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1, and the second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2 can each have a three-layer structure comprising titanium (Ti) / aluminum (Al) / titanium (Ti). However, the disclosure is not limited to this.

[0134] The connecting electrode CE can be integrally connected to the second drain electrode D2 of the second thin-film transistor TR2. However, the disclosure is not limited to this.

[0135] The first planarization layer 115a can be arranged above the connecting electrode CE, the first source electrode S1 and the first drain electrode D1 of the first thin-film transistor TR1, the second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2 and the second interlayer insulating layer 113b.

[0136] The first planarization layer 115a can be an organic layer for planarizing and protecting an upper section of the first thin-film transistor TR1 and an upper section of the second thin-film transistor TR2. For example, the first planarization layer 115a can consist of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0137] The auxiliary electrode 145 can be arranged on the first planarization layer 115a. The auxiliary electrode 145 can be connected to the second drain electrode D2 of the second thin-film transistor TR2 via a contact hole in the first planarization layer 115a. The auxiliary electrode 145 can serve to electrically connect the second thin-film transistor TR2 and an anode E1. Furthermore, the auxiliary electrode 145 can be formed as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), or an alloy thereof. The auxiliary electrode 145 can be made of the same material as the second source electrode S2 and the second drain electrode D2 of the second thin-film transistor TR2.

[0138] The second planarization layer 115b can be arranged above the auxiliary electrode 145 and the first planarization layer 115a. For example, the second planarization layer 115b can consist of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0139] The light-emitting element ED can be arranged on the second planarization layer 115b.

[0140] The anode E1 can be arranged on the second planarization layer 115b. In this case, the anode E1 can be electrically connected to the auxiliary electrode 145 via a contact hole provided in the second planarization layer 115b. The anode E1 can be made of a metallic material.

[0141] In the case where the display device 100 is an upward-emitting display device in which the light emitted from the light-emitting element ED propagates towards a top surface of the substrate 110 on which the light-emitting element ED is arranged, the anode E1 may further comprise a transparent conductive layer and a reflective layer arranged on the transparent conductive layer. For example, the transparent conductive layer may consist of a transparent conductive oxide such as ITO or IZO. For example, the reflective layer may consist of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof.

[0142] The bank 116a can be arranged to cover the anode E1. A section of the bank 116a corresponding to the light-emitting region of the subpixel can be open. Part of the anode E1 can be exposed through the open section (hereinafter referred to as the open region) of the bank 116a. In this case, the bank 116a can consist of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an organic insulating material such as benzocyclobutene-based resin, acrylic resin, or imide-based resin. However, the disclosure is not limited to these. The spacer 116b can further be arranged on the bank 116a.

[0143] The light-emitting layer EL can be located in the open area of ​​bank 116a and in an area around the perimeter of the open area. Therefore, the light-emitting layer EL can be located on the anode E1, which is exposed through the open area of ​​bank 116a.

[0144] The light-emitting layer (EL) can comprise several organic layers. For example, the light-emitting layer EL serves to emit light. The light-emitting layer EL can include a hole injection layer (HIL), a hole transport layer (HTL), a light-emitting layer, an electron transport layer (ETL), and an electron injection layer (EIL). However, depending on the structure or properties of the display device, some components can be omitted. In this case, an electroluminescent layer and an inorganic light-emitting layer can be used as the light-emitting layer EL.

[0145] The hole injection layer is located on the anode E1 and serves to facilitate the injection of the positive holes.

[0146] The hole transport layer is located on the hole injection layer and serves to transfer the positive holes to the light-emitting layer without any problems.

[0147] The light-emitting layer is located on the hole transport layer. The light-emitting layer can consist of a material capable of emitting light of a specific color, thus producing light of that particular color. For example, a phosphorescent or fluorescent material can be used as the light-emitting material.

[0148] The electron injection layer can also be arranged on top of the electron transport layer. The electron injection layer is an organic layer that facilitates the injection of electrons from the cathode E2. Depending on the structure and properties of the display device, the electron injection layer can be omitted.

[0149] An electron-blocking layer to block electron flow or a hole-blocking layer to block positive hole flow can furthermore be arranged at a position adjacent to the light-emitting layer EL. Therefore, it is possible to prevent electrons moving out of the light-emitting layer from passing through the adjacent hole-transport layer when electrons are injected into the light-emitting layer, or to prevent positive holes moving out of the light-emitting layer from passing through the adjacent electron-transport layer when positive holes are injected into the light-emitting layer, thereby improving the luminous efficiency.

[0150] The cathode E2 can be arranged on the light-emitting layer EL. The cathode E2 serves to supply electrons to the light-emitting layer EL. The cathode E2 must supply electrons. Therefore, the cathode E2 can consist of a metallic material such as magnesium (Mg), a silver-magnesium alloy, or the like, which is an electrically conductive material with a low work function. However, the disclosure is not limited to this. In a case where, for example, the display device 100 is an upward-emitting display device, the cathode E2 can contain a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin-zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TO).

[0151] The light-emitting element ED can be formed by the anode E1, the light-emitting layer EL and the cathode E2.

[0152] An encapsulation part 117 can be positioned on the light-emitting element ED.

[0153] The encapsulation part 117 can have a single-layer or a multi-layer structure. For example, the encapsulation part 117 can comprise a first encapsulation layer 117a, a second encapsulation layer 117b, and a third encapsulation layer 117c.

[0154] In this case, the first encapsulation layer 117a and the third encapsulation layer 117c can each consist of an inorganic film, and the second encapsulation layer 117b can consist of an organic film. Beneath the first encapsulation layer 117a, the second encapsulation layer 117b, and the third encapsulation layer 117c, the second encapsulation layer 117b can be the thickest and serve as a planarization layer.

[0155] The first encapsulation layer 117a can be located on the cathode E2 and closest to the light-emitting element ED. The first encapsulation layer 117a can consist of an inorganic insulating material that can be deposited at low temperatures. For example, the first encapsulation layer 117a can be made of silicon nitride (SiNx), silicon dioxide (SiOx), silicon oxynitride (SiON), aluminum oxide (Al2O3), or the like. Because the first encapsulation layer 117a is deposited in a low-temperature environment, it is possible to suppress damage to the light-emitting layer EL, which is made of an organic material and is sensitive to high temperatures, during the deposition process.

[0156] The second encapsulation layer 117b can have a smaller area than the first encapsulation layer 117a. In this case, the second encapsulation layer 117b can be configured to expose two opposite ends of the first encapsulation layer 117a. The second encapsulation layer 117b can act as a buffer to mitigate the mechanical stresses occurring between the layers when the flexible display device is bent. The second encapsulation layer 117b can also improve the planarization capability.

[0157] For example, the second encapsulation layer 117b can consist of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbon (SiOC). The second encapsulation layer 117b can also be formed by inkjet printing. However, the disclosure is not limited to this.

[0158] The third encapsulation layer 117c can be positioned over the substrate 110, which has the second encapsulation layer 117b, such that it covers a top surface and a side surface of both the second encapsulation layer 117b and the first encapsulation layer 117a. In this case, the third encapsulation layer 117c can minimize or prevent the ingress of moisture or oxygen from the outside into the first encapsulation layer 117a and the second encapsulation layer 117b. For example, the third encapsulation layer 117c can consist of an inorganic insulating material such as silicon nitride (SiNx), silicon dioxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

[0159] A touch sensing element can be arranged on the third encapsulation layer 117c. In particular, the touch sensing element can comprise a touch buffer layer 118a arranged on the third encapsulation layer 117c, several touch connection electrodes 121 arranged on the touch buffer layer 118a, a touch interlayer insulating layer 118b arranged on the several touch connection electrodes 121, several touch electrodes 122 arranged on the touch interlayer insulating layer 118b, the first organic layer 119a arranged to cover the several touch electrodes 122, and the second organic layer 119b arranged on the first organic layer 119a.

[0160] The contact buffer layer 118a can prevent external moisture, foreign substances or liquid chemicals such as developers or etching fluids used during a manufacturing process of the contact electrodes TE formed on the contact buffer layer 118a from penetrating into the light-emitting element ED.

[0161] To suppress damage to the light-emitting layer EL, which contains an organic material sensitive to high temperatures, the contact buffer layer 118a can consist of an organic insulating material that can be formed at a predetermined low temperature (e.g., 100 °C or less) and has a low permittivity of 1 to 3. For example, the contact buffer layer 118a can consist of an acrylic-, epoxy-, or siloxane-based material.

[0162] The contact buffer layer 118a can be configured to extend to the non-display area NA or the optical area OA as well as the display area AA.

[0163] The multiple contact connection electrodes 121 are arranged on the contact buffer layer 118a. The multiple contact connection electrodes 121 are arranged in the display area AA and electrically connect the multiple contact electrodes 122 on the contact intermediate insulating layer 118b.

[0164] In this case, the contact hole can be formed through the T contact interlayer insulating layer 118b. The multiple contact connection electrodes 121 are arranged below the contact interlayer insulating layer 118b, and upper sections of the multiple contact connection electrodes 121 are partially exposed through the contact holes.

[0165] For example, the multiple contact connection electrodes 121 can each be configured as a single layer or as a multilayer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. However, the disclosure is not limited thereto. For example, the multiple contact connection electrodes 121 can each have a three-layer structure of titanium (Ti), aluminum (Al), and titanium (Ti).

[0166] The contact interlayer insulating layer 118b can be arranged on the contact buffer layer 118a such that it covers the multiple contact connection electrodes 121 and insulates the multiple contact connection electrodes 121 as well as the multiple contact electrodes 122. The contact interlayer insulating layer 118b can be configured to extend to the non-display area NA or the optical area as well as the display area AA.

[0167] For example, the contact-interlayer insulating layer 118b can be formed as a single layer or as a multiple layer of silicon nitride (SiNx) or silicon oxide (SiOx). However, the disclosure is not limited to this.

[0168] The multiple contact electrodes 122 are arranged on the contact interlayer insulating layer 118b. The multiple contact electrodes 122 are connected in a first direction to define multiple electrode gaps, and in a row direction by the multiple contact connecting electrodes 121 to define multiple electrode rows.

[0169] For example, the multiple contact electrodes 122 can each be configured as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. However, the disclosure is not limited thereto. For example, the multiple contact electrodes 122 can each have a three-layer structure of titanium (Ti), aluminum (Al), and titanium (Ti).

[0170] The first organic layer 119a can be arranged to cover the multiple contact electrodes 122. For example, the first organic layer 119a can consist of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The first organic layer 119a can suppress any height difference of the components of the display panel PN located below the first organic layer 119a, thereby improving the visibility of the display device. For example, the first organic layer 119a can also be referred to as the first contact planarization layer 119a.

[0171] The second organic layer 119b can be arranged above the first organic layer 119a. The second organic layer 119b, made of an organic material, is arranged on the top layer of the display panel PN, thereby suppressing the occurrence of a crack in the top layer of the display panel caused by an external force. The second organic layer 119b can suppress a height difference on the top layer of the display panel PN, further improving the visibility of the display device. For example, the second organic layer 119b can be made of the same material as the first organic layer 119a. However, the disclosure is not limited to this. For example, the second organic layer 119b can also be referred to as the second contact planarization layer 119b.

[0172] Meanwhile, the polarization layer 130 can be arranged on the display panel PN.

[0173] The polarizing layer 130 suppresses the reflection of external light in the display area AA of the substrate 110. When the display device 100 is used outdoors, external natural light can enter and be reflected by the reflective layer contained in the anode E1 of the light-emitting element ED or by a metal electrode located in a lower section of the light-emitting element ED. The light rays reflected as described above can impair the visual detectability of an image on the display device 100. The polarizing layer 130 can polarize the externally incident light in a specific direction and thus prevent the reflected light from exiting the display device 100.

[0174] The bonding layer Adh can be positioned between the second organic layer 119b and the polarizing layer 130. The bonding layer Adh can fix the second organic layer 119b and the polarizing layer 130. The bonding layer Adh can minimize the occurrence of foreign matter or bubbles between the second organic layer 119b and the polarizing layer 130, and an optically transparent bonding agent, such as an optically clear adhesive (OCA) or an optically clear resin (OCR), can be used. However, the disclosure is not limited to this.

[0175] Although not shown, a cover element can be bonded to the polarization layer via the bonding layer. The bonding layer can serve to connect the components of the display device 100. For example, the bonding layer can be designed using a bonding agent for an optically transparent display, such as a pressure-sensitive bonding agent, an optically transparent bonding agent (optically clear adhesive (OCA)), or an optically transparent resin (optically clear resin (OCR)). However, the disclosure is not limited to this.

[0176] The cover element can protect the components of the display device 100 from external influences and prevent damage such as scratches. The cover element can, for example, be made of tempered glass. However, the disclosure is not limited to this.

[0177] The cross-sectional structure of the optical area OA is described below with reference to Fig. 5 and Fig. 6 described in more detail.

[0178] Fig. Figure 5 is an enlarged top view showing area A, which corresponds to the optical area in Fig. 3 corresponds. Fig. Figure 6 is a cross-sectional view along line VI-VI' in Fig. 5. To simplify the description, it shows Fig. 5 only several connection prevention parts CP, a dam DAM and metal pattern 125 among the various components of the display device.

[0179] The optical area OA can include an area in which the through hole TH and the connection prevention part CP and the dam DAM surrounding the through hole TH are arranged.

[0180] With joint reference to Fig. 5 and Fig. 6. The dam DAM can be arranged in the optical area OA and block the flow of the second encapsulation layer 117b, which forms the encapsulation part 117. The dam DAM can be arranged in the form of a closed loop surrounding the through-hole TH in the optical area OA. For example, the first encapsulation layer 117a and the third encapsulation layer 117c can be arranged on top of the dam DAM, and the flow of the second encapsulation layer 117b can be blocked by the dam DAM. The dam DAM must have a predetermined height or greater to block the flow of the second encapsulation layer 117b. For this purpose, the dam DAM must consist of one or more layers made of at least one organic material.For example, the dam DAM can comprise a bottom layer of the same material as the second intermediate layer insulating layer 113b, a middle layer of the same material as the second planarizing layer 115b, and a top layer of the same material as the bank 116a. However, the disclosure is not limited to this. The drawings show a configuration in which one dam DAM is provided. However, two or more dam DAMs can be provided.

[0181] The gate metal GM can be located below and overlap the dam DAM. For example, the gate metal GM overlapping the dam DAM can be located on the same layer and made of the same material as the first gate electrode G1. For example, the gate metal GM can be a marker indicating the position where the through-hole TH is formed when the through-hole TH is formed by a laser in a step of the complete fabrication of the display panel PN. For example, the marker can be spaced several tens to several hundred micrometers away from the through-hole TH. However, the disclosure is not limited to this.

[0182] The light-emitting element ED and the pixel circuitry in the corresponding area are removed to accommodate the through-hole TH. However, the light-emitting elements ED and pixel circuitry located above, below, left, and right of the optical area OA must be electrically connected. For this purpose, the high-potential power line, the gate line, and the like can be arranged in the non-display area NA adjacent to the optical area OA such that they are connected above, below, left, and right, bypassing the through-hole.

[0183] In the display device 100 of the embodiment, the connection-prevention element CP and the dam DAM can be arranged in a closed loop shape which, together with the through-hole TH, defines a concentric circle based on the through-hole TH. If, for example, the connection-prevention element or the dam has cracks, the problem may arise that moisture and oxygen from the outside penetrate into the display area. Alternatively, if the connection-prevention element or the dam has cracks, the problem may arise that the second encapsulation layer flows over the optical area and the through-hole in the optical area.

[0184] With joint reference to Fig. 5 and Fig. 6. The multiple connection-prevention elements CP can be arranged between the dam DAM and the through-hole TH. The multiple connection-prevention elements CP can be designed to prevent the ingress of moisture or oxygen by interrupting the light-emitting layer EL. For example, the multiple connection-prevention elements CP can be arranged to protect the light-emitting element ED in the display area AA from moisture or oxygen that may enter through the through-hole TH. The light-emitting layer EL of the light-emitting element ED can be applied to a front surface of the display panel PN and can also be uniformly applied in the optical area OA.Due to the nature of the organic material, the light-emitting layer EL exhibits high reactivity and dispersity with respect to moisture and oxygen, allowing moisture and oxygen to be transferred to the light-emitting element ED in the display area AA. The multiple interfacial components CP can partially interrupt the light-emitting layer EL to suppress this problem.

[0185] The multiple connection-prevention elements CP can furthermore be arranged between the dam DAM and the display area AA. For the sake of simplicity, the multiple connection-prevention elements CP arranged between the dam DAM and the through-hole TH are referred to below as first connection-prevention elements 140, and the multiple connection-prevention elements CP arranged between the dam DAM and the display area AA are referred to as second connection-prevention elements 150.

[0186] The first connection-prevention element 140 can comprise a first structure 141, a second structure 142, and a third structure 143. The first structure 141, the second structure 142, and the third structure 143 can each be configured as a two-layer structure, comprising a first layer L1 and a second layer L2 arranged on top of the first layer L1 to interrupt the light-emitting layer EL in the optical region OA. For example, an undercut structure can be formed on a side face of the second layer L2. Since the first layer L1 and the second layer L2 of the first structure 141, the second structure 142, and the third structure 143 are each arranged to have a tapered shape, a difference in width can occur at an interface between the first layer L1 and the second layer L2.Since the upper surface of the first layer L1 can be narrower than the lower surface of the second layer L2, undercut structures can be formed in which part of the lower surface of the second layer L2 is exposed. Therefore, the light-emitting layer EL applied to the front surface of the display panel PN can be interrupted by the undercut structures of the side surfaces of the second layers L2 of the first structure 141, the second structure 142, and the third structure 143. However, the shapes of the first structure 141, the second structure 142, and the third structure 143 are not limited to this and can be implemented as various shapes that can form the undercut structures.

[0187] The first structure 141, the second structure 142, and the third structure 143, which form the first connection-prevention part 140, can consist of an organic material and an inorganic material. For example, an upper section of the first structure 141, the second structure 142, and the third structure 143 can consist of the same material as the second planarization layer 115b. However, the disclosure is not limited to this. A lower section of the first structure 141, the second structure 142, and the third structure 143 can each consist of the same material as the second interlayer insulating layer 113b. However, the disclosure is not limited to this.

[0188] The second connection-prevention part 150 can comprise a fourth structure 151 and a fifth structure 152. Like the first structure 141, the second structure 142, and the third structure 143, the fourth structure 151 and the fifth structure 152, which form the second connection-prevention part 150, can each have a two-layer structure comprising the first layer L1 and the second layer L2 on top of the first layer L1. The second encapsulation layer 117b, which is arranged on the second connection-prevention part 150, makes it difficult for moisture or oxygen to penetrate from an upper section of the second connection-prevention part 150.Therefore, undercut structures can be formed on the side surface of the second layer L2 of the second connection-prevention part 150 to prevent moisture and oxygen from penetrating from the lateral section where the through-hole TH or the first connection-prevention part 140 is located. The arrangement of the first connection-prevention part 140 and the second connection-prevention part 150 can prevent moisture and oxygen from penetrating through the light-emitting layer EL from the optical area OA into the light-emitting element ED in the display area AA.

[0189] The fourth structure 151 and the fifth structure 152, which form the second connection-prevention part 150, can also consist of an organic and an inorganic material, respectively. For example, the first layer L1 of the fourth structure 151 and the fifth structure 152 can consist of the same material as the second interlayer insulating layer 113b, and the second layer L2 of the fourth structure 151 and the fifth structure 152 can consist of the same material as the second planarizing layer 115b. However, the disclosure is not limited to these possibilities.

[0190] In a case where multiple interlocking elements are arranged in the optical area to suppress the ingress of moisture or oxygen from the through-hole as described above, a height difference arises at the upper sections of these elements due to their shapes. This height difference causes refraction on the polarizing layer located above the interlocking elements. The refraction on the polarizing layer causes the user to visually perceive it. When refraction occurs on the polarizing layer, a blurring of the light occurs in the area where the refraction takes place, resulting in a deterioration of the display device's image quality.

[0191] Therefore, in the display device 100 of the embodiment, the metal pattern 125 is arranged between the first connection-prevention parts 140 on the first connection-prevention part 140. Therefore, the occurrence of refraction on the polarization layer 130, which is arranged above the first connection-prevention part 140, can be suppressed by suppressing the height difference on the upper section of the first connection-prevention part 140.

[0192] With reference to Fig. 6. Several inorganic insulating layers can be arranged along the shape of the first contact-prevention part 140 on the first contact-prevention part 140 in the optical area OA. For example, the several inorganic insulating layers can be the first encapsulation layer 117a, the third encapsulation layer 117c, the contact buffer layer 118a, and the contact interlayer insulating layer 118b.

[0193] The height of each of the multiple inorganic insulating layers arranged between the multiple first contact-prevention parts 140 differs from the height of a section that overlaps the multiple first contact-prevention parts 140. In particular, on the contact-intermediate insulating layer 118b, which is positioned at the uppermost end of the multiple inorganic insulating layers, a height difference occurs between the multiple first contact-prevention parts 140 due to the aforementioned height difference.For example, the multiple inorganic insulating layers can have shapes comprising multiple convex sections CV, in which the distance between the cathode E2 and the contact-interlayer insulating layer 118b, which is the uppermost end of the multiple inorganic insulating layers, is relatively short, and multiple concave sections CC, in which the distance between the contact-interlayer insulating layer 118b and the cathode E2 is relatively long. For example, the multiple inorganic insulating layers can have shapes comprising multiple convex sections CV designed to overlap the first connection-prevention parts 140, and multiple concave sections CC positioned between the first connection-prevention parts 140.

[0194] According to this embodiment, the metal pattern 125 can be configured as multiple metal patterns 125 spaced apart from one another on the multiple concave sections CC of the multiple inorganic insulating layers. For example, an upper surface of the metal pattern 125 can be arranged on the same plane as the upper surfaces of the multiple convex sections CV. Preferably, the multiple metal patterns 125 project into the inorganic insulating layer. The projections of the metal pattern 125 are preferably arranged in the concave sections CC.

[0195] The metal pattern 125 can be arranged on the same layer and made of the same material as the multiple contact electrodes 122. For example, the metal pattern 125 can be configured as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. However, the disclosure is not limited to this. For example, the metal pattern 125 can have a three-layer structure of titanium (Ti), aluminum (Al), and titanium (Ti). In the display device 100 of the embodiment of the disclosure, the metal pattern 125 is arranged on the same layer and made of the same material as the multiple contact electrodes 122, so that the metal pattern 125 can planarize the uppermost sections of the multiple inorganic insulating layers.

[0196] According to the embodiment of the description, the metal pattern 125 is arranged on the concave section CC of the touch-interlayer insulating layer 118b, which is the uppermost end of the multiple inorganic insulating layers arranged above the first connection-prevention part 140. For example, the metal pattern 125 on the touch-interlayer insulating layer 118b, which is arranged in the optical area OA, can be formed by a process identical to the process for forming the multiple touch electrodes 122 on the touch-interlayer insulating layer 118b in the display area AA. For example, the multiple touch electrodes 122 and the multiple metal patterns 125 can be formed by depositing the metal layer in the display area AA and the optical area OA and subsequently structuring the metal layer. However, the disclosure is not limited thereto.In this case, an upper surface of the metal pattern 125 can be positioned on the same plane as the convex section CV of the multiple inorganic insulating layers.

[0197] Therefore, the multiple inorganic insulating layers on the first interference-prevention part 140 can be planarized, and the polarization layer 130 arranged over the multiple inorganic insulating layers can also be arranged flat. Therefore, the visibility of the display device 100 of the embodiment of the disclosure can be improved, light blurring in the optical area OA can be suppressed, and the image quality of the display device 100 can be improved.

[0198] Fig. Figure 7 is a top view of a display device of a further embodiment of the disclosure. Fig. 8 is a sectional view along line VIII-VIII' in Fig. 7. Fig. 7 and Fig. With the exception of one metal pattern 225, the 8 are essentially identical in their configuration to Fig. 1 to 6. Therefore, to simplify the description, repeated descriptions are omitted, with the exception of metal pattern 225.

[0199] In a display device 200 of a further embodiment, the metal pattern 225 is arranged on the first connection-prevention part 140 and covers an upper section of the first connection-prevention part 140. Therefore, the occurrence of refraction on the polarization layer 130, which is arranged above the first connection-prevention section 140, can be suppressed by reducing the height difference at the upper section of the first connection-prevention section 140.

[0200] With reference to Fig. 7 and Fig. 8. The multiple inorganic insulating layers can be arranged along the shape of the first contact-prevention part 140 on the first contact-prevention part 140 in the optical area OA. For example, the multiple inorganic insulating layers can be the first encapsulation layer 117a, the third encapsulation layer 117c, the contact buffer layer 118a, and the contact interlayer insulating layer 118b.

[0201] The multiple inorganic insulating layers can have shapes that include the multiple convex sections CV designed to overlap the first interlocking parts 140 and the multiple concave sections CC positioned between the first interlocking parts 140.

[0202] In the display device 200 of a further embodiment, the metal pattern 225 can be arranged such that it covers all of the multiple concave sections CC and the multiple convex sections CV. For example, the metal pattern 225 can be arranged along the shapes of the multiple inorganic insulating layers. Fig. 7 and Fig. Figure 8 of the application illustrates that the metal pattern 225 covers all of the multiple inorganic insulating layers arranged over the first anti-connection part 140, the second anti-connection part 150, and the dam DAM. However, the disclosure is not limited to this. For example, the metal pattern 225 can be arranged to cover only the multiple inorganic insulating layers arranged over the dam DAM and the first anti-connection part 140.

[0203] For example, the metal pattern 225 can be arranged on the same layer and made of the same material as the multiple contact electrodes 122. For example, the metal pattern 225 can be configured as a single layer or as a multiple layer of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. However, the disclosure is not limited to this. For example, the metal pattern 225 can have a three-layer structure of titanium (Ti), aluminum (Al), and titanium (Ti).

[0204] In the display device 200 of a further embodiment of the disclosure, the metal pattern 225 can be arranged such that it covers the convex section CV and the concave section CC on the contact-intermediate insulating layer 118b, which is the uppermost end of the multiple inorganic insulating layers arranged above the first connection-prevention part 140. For example, the metal pattern 225 on the contact-intermediate insulating layer 118b in the optical area OA can be formed by a process identical to the process for forming the multiple contact electrodes 122 on the contact-intermediate insulating layer 118b in the display area AA. For example, the multiple contact electrodes 122 and the metal pattern 225 can be formed by applying the metal layer in the display area AA and in the optical area OA and subsequently structuring the metal layer.The disclosure is not limited to this, however. For example, the metal pattern 225 can be formed by structuring it into a layer. Therefore, the metal pattern 225 may cover not only the upper section of the first connection-prevention part 140, but also the upper sections of the dam DAM and the second connection-prevention part 150. The metal pattern 225 can be arranged to overlap a black matrix BM provided above the metal pattern 225. Therefore, even when the metal pattern 225 is formed to cover the first connection-prevention part 140, the second connection-prevention part 150, and the dam DAM, the black matrix BM can prevent the metal pattern 225 from being visually detected by the user in the optical area OA.For example, the metal pattern 225 can be arranged so that it overlaps the black matrix BM, and so that it does not protrude further towards the display area AA than the black matrix BM.

[0205] In the display device 200 of a further embodiment of the disclosure, the metal pattern 225 can be shaped such that it connects the metal pattern 225 arranged on the concave section CC with the metal pattern 225 arranged on the convex section CV. Due to a height difference of the multiple inorganic insulating layers, a slight height difference may occur between the metal pattern 225 arranged on the concave section CC and the metal pattern 225 arranged on the convex section CV. However, since the height difference of the metal pattern 225 is much smaller than the height difference of the multiple inorganic insulating layers, the metal pattern 225 can compensate for the height difference caused by the multiple inorganic insulating layers between the adjacent first connection-prevention parts 140.Therefore, the metal pattern 225 can reduce the height difference of the upper section of the first connection-prevention part 140. This makes it possible to reduce the refraction at the multiple inorganic insulating layers on the first connection-prevention part 140 and to reduce the refraction at the polarization layer 130, which is arranged above the multiple inorganic insulating layers. Therefore, the visibility of the display device 200 of a further embodiment of the disclosure can be improved, light blurring in the optical area OA can be suppressed, and the image quality of the display device 200 can be improved.

[0206] In the display device 200 of a further embodiment of the disclosure, an additional process for planarizing the first organic layer 119a on the first anti-collapse part 140 can be carried out to completely eliminate the height difference of the upper section of the first anti-collapse part 140. For example, a material for forming the first organic layer 119a is applied to the first anti-collapse part 140, which has the upper section on which the several inorganic insulating layers are formed. Subsequently, a slotted mask with opening sections is positioned to correspond to an area overlapping the first anti-collapse part 140. Then, exposure, development, and heat treatment processes are carried out.Therefore, the area overlapping the first connection-prevention portion 140 is irradiated with a greater amount of light than the area not overlapping the first connection-prevention portion 140. Consequently, the thickness of the first organic layer 119a, which is arranged over the area overlapping the first connection-prevention portion 140, can be less than the thickness of the first organic layer 119a, which is arranged over the area not overlapping the first connection-prevention portion 140. Therefore, the upper surface of the first organic layer 119a can be flat, even though the lower surface of the first organic layer 119a has a height difference. Therefore, the second organic layer 119b and the polarizing layer 130, which are arranged on top of the first organic layer 119a, can also be flat.Therefore, the visibility of the display device 200 of a further embodiment of the disclosure can be improved, light blurring in the optical area OA can be suppressed, and the image quality of the display device 200 can be improved. In the display device 200 of a further embodiment of the disclosure, the metal pattern 225 is arranged above the first connection-prevention part 140, and the height difference caused by the first connection-prevention part 140 is compensated for, so that the exposure dose and exposure time can be reduced, the process time and process costs can be reduced, and the process can be optimized.

[0207] Although the exemplary embodiments of the disclosure have been described in detail with reference to the accompanying drawings, the disclosure is not limited to these and can be embodied in many different forms without deviating from the technical concept of the disclosure. Therefore, the exemplary embodiments of the disclosure serve only for illustration and are not intended to limit the technical concept of the disclosure. The scope of the technical concept of the disclosure is not limited thereto. It should therefore be understood that the exemplary embodiments described above are illustrative in every respect and do not limit the disclosure. The scope of protection of the disclosure should be interpreted on the basis of the following claims, and all technical concepts within the equivalent scope thereof should be interpreted as falling within the scope of the disclosure. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] KR 10-2024-0116379

[0001]

Claims

[1] Display device comprising: a substrate (110) comprising a display area (AA) and an optical area (OA) which is at least partially surrounded by the display area (AA) and has a through-hole (TH); a dam (DAM) that is located in the optical area (OA) on the substrate (110) and is designed to surround the through hole (TH); several connection prevention elements (CP) arranged in the optical area (OA) on the substrate (110) and located closer to the through hole (TH) than the dam (DAM); and a metal pattern (125) arranged between the multiple coupling prevention parts (CP). [2] Display device according to claim 1, further comprising: a light-emitting element (ED) arranged in the display area (AA) comprising an anode (E1), a light-emitting layer (EL) and a cathode (E2), wherein the multiple interlocking components (CP) each comprise a first layer (L1) and a second layer (L2) arranged on the first layer (L1), wherein the first layer (L1) and the second layer (L2) each have a tapered shape, wherein an upper surface of the first layer (L1) is narrower than a lower surface of the second layer (L2), and wherein the light-emitting layer (EL) extends to the optical area (OA) and is interrupted by the multiple connection-prevention parts (CP). [3] Display device according to claim 1 or 2, further comprising an inorganic insulating layer arranged on the multiple connection-prevention parts (CP), wherein the inorganic insulating layer has a shape comprising multiple convex sections (CV) designed to overlap the multiple connection-prevention parts (CP) and multiple concave sections (CC) designed to overlap the multiple connection-prevention parts (CP), and wherein the metal pattern (125) is arranged on the inorganic insulating layer, the metal pattern (125) preferably being formed as multiple metal patterns arranged on the multiple concave sections (CC) and spaced apart from one another and / or the metal pattern (125) being arranged along a shape of an upper surface of the inorganic insulating layer. [4] Display device according to claim 3, wherein the multiple concave sections (CC) are positioned between the multiple connection-prevention parts (CP) and / or the multiple concave sections (CC) are further positioned between the multiple connection-prevention parts (CP) and the dam (DAM) as well as between the multiple connection-prevention parts (CP) and the through-hole (TH). [5] Display device according to claim 3 or 4, wherein an upper surface of the metal pattern (125) is arranged on the same plane as upper surfaces of the multiple convex sections (CV) and / or the metal pattern (125) is arranged such that it covers all of the multiple concave sections (CC) and the multiple convex sections (CV). [6] Display device according to any one of the preceding claims 3 to 5, wherein the metal pattern (125) is shaped to connect the metal pattern (125) arranged on the multiple concave sections (CC) of the inorganic insulating layer with the metal pattern (125) arranged on the multiple convex sections (CV) of the inorganic insulating layer, and / or the metal pattern (125) is arranged to extend to an upper section of the dam (DAM). [7] Display device according to any one of the preceding claims 3-6, further comprising an encapsulation part (117) arranged on the light-emitting element (ED) and a touch detection part arranged on the encapsulation part (117), wherein the inorganic insulating layer comprises at least one insulating layer of the encapsulation part (117) and / or the touch detection part. [8] Display device according to claim 7, wherein the encapsulation part (117) comprises a first inorganic encapsulation layer (117a), an organic encapsulation layer (117b) on the first inorganic encapsulation layer (117a) and a second inorganic encapsulation layer (117c) on the organic encapsulation layer (117b); and / or the touch detection part comprises a touch buffer layer (118a) arranged on the encapsulation layer (117), a first electrode (121) arranged on the touch buffer layer (118a), a touch interlayer insulating layer (118b) arranged on the first electrode (121), and a second electrode (122) arranged on the touch interlayer insulating layer (118b). [9] Display device according to claim 8, wherein the inorganic insulating layer comprises at least one of the first inorganic encapsulation layer (117a), the second inorganic encapsulation layer (117c), the contact buffer layer (118a) and the contact intermediate layer insulating layer (118b), wherein the metal pattern (125) preferably consists of the same material as the second electrode (122). [10] Display device according to any one of the preceding claims 7-9, further comprising at least one of the following elements: an optical electronic device arranged to overlap the optical area (OA), a black matrix (BM) arranged on the touch detection part in the optical area (OA), wherein the metal pattern (125) is preferably arranged in an area that overlaps the black matrix (BM). [11] Display device comprising: a substrate (110) comprising a display area (AA) and an optical area (OA) surrounded by the display area (AA) and having a through-hole (TH); a light-emitting element (ED) arranged in the display area (AA) on the substrate (110) comprising an anode (E1), a light-emitting layer (EL) and a cathode (E2); an encapsulation part (117) arranged on the light-emitting element (ED) comprising a first inorganic encapsulation layer (117a), an organic encapsulation layer (117b) arranged on the first inorganic encapsulation layer (117a), and a second inorganic encapsulation layer (117c) arranged on the organic encapsulation layer (117b); a touch detection part arranged on the encapsulation part (117) and comprising a touch buffer layer (118a), a first electrode (121) arranged on the touch buffer layer (118a), a touch interlayer insulating layer (118b) arranged on the first electrode (121), and a second electrode (122) arranged on the touch interlayer insulating layer (118b); a dam (DAM) designed to surround the through hole (TH) in the optical area (OA) on the substrate (11); several interlocking components (CP) arranged such that they are closer to the through-hole (TH) than the dam (DMA) in the optical area (OA) on the substrate (110); and a metal pattern (125) arranged between the multiple coupling prevention parts (CP). [12] Display device according to one of the preceding claims, wherein the metal pattern (125) is made of the same material as the second electrode (122). [13] Display device according to one of the preceding claims, further comprising an inorganic insulating layer arranged on the multiple connection prevention parts (CP), wherein the metal pattern (125) is arranged on the inorganic insulating layer. [14] Display device according to claim 13, wherein the inorganic insulating layer has a shape comprising several convex sections (CV) designed to overlap the multiple connection-prevention parts (CP) and several concave sections (CC) designed to not overlap the multiple connection-prevention parts (CP). [15] Display device according to claim 14, wherein the metal pattern (125) is configured as multiple metal patterns arranged on the multiple concave sections (CC) and spaced apart from one another, and / or an upper surface of the metal pattern (125) is arranged on the same plane as upper surfaces of the multiple convex sections (CV), and / or the metal pattern (125) is arranged to cover all of the multiple concave sections (CV) and the multiple convex sections (CC). [16] Display device according to one of the preceding claims, wherein at least one or each of the dam (DAM), the multiple connection prevention parts (CP) and the metal pattern (125) has a closed shape surrounding the through hole (TH). [17] Display device according to one of the preceding claims, wherein the through hole (TH) has a circular shape and / or the dam (DAM), the multiple connection prevention parts (CP) and the metal pattern (125) are each designed to define a concentric circle together with the through hole (TH).

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