LIGHT EMISSION DEVICE AND IMAGE DISPLAY DEVICE

Abstract

A light-emitting device according to one embodiment of the present disclosure comprises a base, a first light-emitting element, a second light-emitting element, and a buried layer. The first light-emitting element and the second light-emitting element are positioned on the base such that they are adjacent to each other. The buried layer is embedded in at least one part between the first light-emitting element and the second light-emitting element and has a thermal conductivity that is higher than that of the base.

Description

Technical field

[0001] The present disclosure relates to a light emission device and an image display device comprising the light emission device. background

[0002] A light emission device has been proposed in which several light emission elements, which for example include a composite semiconductor layer, are bonded to a substrate. The substrate includes a control circuit that controls the several light emission elements (see, for example, PTL 1). List of cited documents Patent literature

[0003] PTL 1: International Publication No. WO2022 / 185976 Brief description of the invention

[0004] In recent years there has been a demand for a light emission device designed to perform stable light emission operation.

[0005] Therefore, a light emission device with excellent operational reliability is desirable.

[0006] A light-emitting device according to one embodiment of the present disclosure comprises a base, a first light-emitting element, a second light-emitting element, and a buried layer. The first light-emitting element and the second light-emitting element are positioned on the base such that they are adjacent to each other. The buried layer is embedded in at least one part between the first light-emitting element and the second light-emitting element and has a thermal conductivity that is higher than that of the base.

[0007] In the light emission device according to the embodiment of the present disclosure, the buried layer, which has a thermal conductivity higher than that of the base, is arranged in at least part between the first light emission element and the second light emission element. This causes the heat generated in the light emission elements to be efficiently transferred to the buried layer. Brief description of the drawings [ Fig. 1] Fig. Figure 1 is a schematic cross-sectional diagram illustrating an example of a configuration of a light emission device according to an embodiment of the present disclosure. [ Fig. 2] Fig. 2 is a schematic cross-sectional diagram that shows an example of a process for producing the in Fig. Figure 1 describes the illustrated light emission device. [ Fig. 3] Fig. 3 is a schematic cross-sectional diagram illustrating the process for producing the in Fig. 1 illustrated light emission device following Fig. 2 illustrated. [ Fig. 4] Fig. 4 is a schematic cross-sectional diagram illustrating the process for producing the in Fig. 1 illustrated light emission device following Fig. 3 illustrated. [ Fig. 5] Fig. 5 is a schematic cross-sectional diagram illustrating the process for producing the in Fig. 1 illustrated light emission device following Fig. 4 illustrates. [ Fig. 6] Fig. 6 is a schematic cross-sectional diagram illustrating the process for producing the in Fig. 1 illustrated light emission device following Fig. 5 illustrates. [ Fig. 7] Fig. 7 is a schematic cross-sectional diagram illustrating the process for producing the in Fig. 1 illustrated light emission device following Fig. 6 illustrates. [ Fig. 8] Fig. Figure 8 is a schematic cross-sectional diagram illustrating an example of a configuration of a light emission device according to Modification Example 1 of the present disclosure. [ Fig. 9] Fig. Figure 9 is a schematic cross-sectional diagram illustrating an example of a configuration of a light emission device according to Modification Example 2 of the present disclosure. [ Fig. 10] Fig. 10 is a schematic cross-sectional diagram illustrating the process for producing the in Fig. 9 illustrated light emission device following Fig. 4 illustrates. [ Fig. 11] Fig. Figure 11 is a schematic cross-sectional diagram illustrating an example of a configuration of a light emission device according to Modification Example 3 of the present disclosure. [ Fig. 12] Fig. Figure 12 is a perspective diagram illustrating an example of a configuration of an image display device according to an application example of the present disclosure. [ Fig. 13] Fig. Figure 13 is a perspective diagram illustrating another example of a configuration of an image display device according to an application example of the present disclosure. Implementation methods of the invention

[0008] An embodiment of the present disclosure is described in detail below with reference to the drawings. The following description is merely a specific example of the present disclosure, and the present disclosure should not be limited to the following aspects. Furthermore, the present disclosure is not limited to arrangements, dimensions, dimensional ratios, and the like of each component illustrated in the drawings. It should be noted that the description is given in the following order. 1. An embodiment (example in which heat dissipation material is provided between light emission elements) 1-1. Configuration of the light emission device 1-2. Method for manufacturing the light emission device 1-3. Function and effects 2. Modification Examples 2-1. Modification example 1 (Further example of the light emission device) 2-2. Modification example 2 (Further example of the light emission device) 2-3. Modification example 3 (Further example of the light emission device) 3. Application examples <1. One embodiment>[1-1. Configuration of the light emission device]

[0009] Fig. Figure 1 schematically illustrates an example of a cross-sectional configuration of a light emission device 1 according to an embodiment of the present disclosure. The light emission device 1 is applicable, for example, to an image display device referred to as a head-mounted display (for example, a [missing information]). Fig. 12 illustrated Head-Mounted Display 100, which will be described later).

[0010] The light emission device 1 includes, for example, a base 20 extending in an XY plane and a layer of light emission elements 10 stacked on the base 20 in a Z-axis direction. The layer of light emission elements 10 includes several light emission elements 11. The light emission elements 11 are arranged on the base 20 such that they are adjacent to each other in the XY plane. (Base 20 configuration)

[0011] The base 20 includes, for example, a substrate 21 and a wiring layer 22. The wiring layer 22 is provided to cover a front surface 21US of the substrate 21. A control circuit 30, which controls the multiple light-emitting elements 11, is formed on the front surface 21US of the substrate 21. The substrate 21 can be, for example, a single-crystal silicon (Si) substrate.

[0012] The control circuit 30, for example, includes several control transistors. The individual control transistors can be a field-effect transistor (MISFET) with a metal / insulator / semiconductor structure, a field-effect transistor (MOSFET) with a metal / oxide film / semiconductor structure, or the like.

[0013] The wiring layer 22 includes an insulation layer 23, several terminals 24 (24A, 24B), several wires 25 (25A, 25B), and several coupling layers 26 (26A, 26B). It should be noted that in Fig. In Figure 1, terminal 24A and terminal 24B are represented as the multiple terminals 24, wiring 25A and wiring 25B as the multiple wirings 25, and coupling layer 26A and coupling layer 26B as the multiple coupling layers 26. Insulation layer 23 includes, for example, an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN), or silicon oxynitride (SiON). A top surface of each of terminals 24A and 24B is exposed, for example, on a front surface 22US of wiring layer 22. Wiring 25A is provided, for example, between terminal 24A and substrate 21 and is embedded in insulation layer 23. Wiring 25B is provided, for example, between terminal 24B and substrate 21 and is embedded in insulation layer 23.Coupling layer 26A extends in the Z-axis direction to couple the control circuit 30, the wiring 25A, and the terminal 24A. Coupling layer 26B extends in the Z-axis direction to couple the control circuit 30, the wiring 25B, and the terminal 24B. The multiple terminals 24 and the multiple wirings 25 can, for example, contain a highly conductive material such as aluminum (Al) or copper (Cu). The multiple coupling layers 26 can, for example, contain tungsten (W).

[0014] Control circuit 30 is electrically coupled to terminal 24A via coupling layer 26A and wiring 25A. Control circuit 30 is electrically coupled to terminal 24B via coupling layer 26B and wiring 25B. (Configuration of the light emission element layer 10)

[0015] The light-emitting element layer 10 includes the multiple light-emitting elements 11, multiple wiring layers 12, multiple electrode plugs 13, one or more transparent electrode layers 14, one or more light-reflecting films 15, one or more buried layers 16, one or more insulating layers 17, one or more insulating layers 18, and one or more insulating layers 19. It should be noted that in Fig. Figure 1 represents a light-emitting element 11A and a light-emitting element 11B, as illustrated by the multiple light-emitting elements 11; a wiring layer 12A and a wiring layer 12B, as illustrated by the multiple wiring layers 12; and an electrode plug 13A and an electrode plug 13B, as illustrated by the multiple electrode plugs 13. Furthermore, a light-reflecting film 15A and a light-reflecting film 15B are illustrated as one or more light-reflecting films 15. It should be noted that the light-reflecting film 15A and the light-reflecting film 15B may be formed as a single piece.

[0016] Here, light-emitting element 11A corresponds to a specific example of a "first light-emitting element" according to an aspect of the present disclosure, and light-emitting element 11B corresponds to a specific example of a "second light-emitting element" according to an aspect of the present disclosure. Furthermore, wiring layer 12A corresponds to a specific example of a "first wiring layer" according to an aspect of the present disclosure, and wiring layer 12B corresponds to a specific example of a "second wiring layer" according to an aspect of the present disclosure. Furthermore, electrode plug 13A corresponds to a specific example of a "first electrode plug" according to an aspect of the present disclosure, and electrode plug 13B corresponds to a specific example of a "second electrode plug" according to an aspect of the present disclosure.Furthermore, the light-reflecting film 15A corresponds to a specific example of a “first light-reflecting film” according to one aspect of the present disclosure, and the light-reflecting film 15B corresponds to a specific example of a “second light-reflecting film” according to one aspect of the present disclosure.

[0017] Each of the light-emitting elements 11 (11A, 11B) is a solid-state light-emitting element that emits light of a predetermined wavelength band from an upper surface and is, for example, a light-emitting diode (LED) chip. The term "LED chip" refers to what is cut from a wafer used for crystal growth and does not refer to a package type covered with a potting resin or the like. The LED chip has, for example, a size greater than or equal to 2 µm and less than or equal to 100 µm and is a so-called micro-LED.

[0018] Each of the light-emitting elements 11 (11A, 11B) is, for example, a light-emitting diode (LED) with a stacked structure in which a first composite semiconductor layer 111 (111A, 111B) of a first conductivity type, an active layer 112 (112A, 112B), and a second composite semiconductor layer 113 (113A, 113B) of a second conductivity type are stacked in that order. Each of the light-emitting elements 11 (11A, 11B) further includes a first electrode 114 (114A, 114B). Each of the first electrodes 114 (114A, 114B), for example, is provided on the other side of the first composite semiconductor layer 111 (111A, 111B) by the active layer 112 (112A, 112B) and electrically coupled to the first composite semiconductor layer 111 (111A, 111B). Each of the first electrodes 114 (114A, 114B) is electrically coupled to the wiring layer 12 (12A, 12B) via the electrode plug 13 (13A, 13B).

[0019] Each of the first composite semiconductor layers 111 (111A, 111B) contains, for example, an n-GaN-based semiconductor material. Each of the active layers 112 (112A, 112B) has, for example, a multiple quantum well structure in which InGaN and GaN are stacked alternately and exhibits light-emitting regions within the layer. Light in a blue band of greater than or equal to 430 nm and less than or equal to 500 nm can be extracted from each of the active layers 112 (112A, 112B). For example, light with a wavelength corresponding to an ultraviolet region (ultraviolet light) can be extracted from each of the active layers 112 (112A, 112B). Each of the second composite semiconductor layers 113 (113A, 113B) contains, for example, a p-GaN-based semiconductor material.In the light emission element 11 (11A, 11B) there is an upper surface of the second composite semiconductor layer 113 (113A, 113B), i.e. the surface of the light emission element 11 (11A, 11B) facing away from the active layer 112 (112A, 112B), a light extraction surface S11 (S11A, S11B) of the light emission element 11 (11A, 11B).

[0020] Each of the first electrodes 114 (114A, 114B) is, for example, in ohmic contact with the corresponding one of the first composite semiconductor layers 111 (111A, 111B) and contains, for example, a transparent conductive material, such as a multilayer film (Ni / Au) of nickel (Ni) and gold (Au) or ITO.

[0021] The wiring layer 12 (12A, 12B), the electrode plug 13 (13A, 13B), and the insulating layer 18 are located in a layer between the layer containing the multiple light-emitting elements 11 (11A, 11B) and the base 20. The insulating layer 18 occupies the periphery of the wiring layers 12 (12A, 12B) and the electrode plug 13 (13A, 13B). The insulating layer 18 contains, for example, an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN), or silicon oxynitride (SiON).

[0022] It is possible for each of the wiring layers 12 (12A, 12B) to supply a predetermined voltage to the corresponding one of the electrode plugs 13 (13A, 13B) via the corresponding electrode plugs 13 (13A, 13B), for example, based on the control of the control circuit 30, to the corresponding one of the light-emitting elements 11 (11A, 11B). The magnitude of the voltage applied to each of the light-emitting elements 11 (11A, 11B) can be the same or can be partially or completely different. Each of the wiring layers 12 (12A, 12B) has a stacked structure in which, for example, a light-blocking film 122 (122A, 122B) and a light-absorbing film 121 (121A, 121B) are stacked in that order.

[0023] Each of the light-absorbing films 121 (121A, 121B) absorbs light that escapes between, for example, the light-reflecting film 15 (15A, 15B) and the electrode plug 13 (13A, 13B). The light-absorbing film 121 (121A, 121B) contains a conductive material. The light-absorbing film 121 (121A, 121B) contains, for example, a monolayer film. The monolayer film can contain, for example, a metal or a metal compound that mainly contains titanium nitride (TiN) and / or cobalt (Co) and / or nitrogen-doped titanium oxide (TiON) and / or tantalum nitride (TaN) and / or amorphous carbon (aC).

[0024] The light-blocking film 122 (122A, 122B) is arranged on the opposite side of the light-absorbing film 121 (121A, 121B) from the light-emitting element 11 (11A, 11B). The surface of the light-blocking film 122 (122A, 122B) facing away from the light-absorbing film 121 (121A, 121B) is electrically coupled to the corresponding terminals 24A and 24B of the base 20. The light-blocking film 122 (122A, 122B) is an optical film that blocks leakage light emitted by the light-emitting element 11 (11A, 11B) and also serves as a path through which electricity flows. This means that the light-blocking film 122 (122A, 122B) electrically couples the electrode plug 13 (13A, 13B) and the corresponding one of the terminals 24A and 24B. The light-blocking film 122 (122A, 122B) comprises, for example, a monolayer film made of a metal that mainly contains aluminum (Al) and / or copper (Cu) and / or tungsten (W) and / or titanium (Ti).

[0025] The electrode plug 13 (13A, 13B) electrically couples the first electrode 114 (114A, 114B) and the light-absorbing film 121 (121A, 121B). The electrode plug 13 (13A, 13B) contains, for example, tungsten (W).

[0026] The transparent electrode layer 14 is arranged on the light extraction surface S11 (S11A, S11B), which is the surface of the second composite semiconductor layer 113 (113A, 113B). The transparent electrode layer 14 is provided such that it is shared by the multiple light emission elements 11 (11A, 11B).

[0027] The light-reflecting film 15 (15A, 15B) is provided such that it surrounds the periphery of the light-emitting element 11 (11A, 11B). In particular, the light-reflecting film 15 (15A, 15B) is provided along a side surface of the first composite semiconductor layer 111 (111A, 111B), a side surface of the active layer 112 (112A, 112B), a side surface of the second composite semiconductor layer 113 (113A, 113B), and a surface of the first electrode 114 (114A, 114B) opposite the wiring layer 12. The insulating layer 17 is provided between the light-emitting element 11 (11A, 11B) and the light-reflecting film 15 (15A, 15B). The light-reflecting film 15 (15A, 15B) is not provided at a position corresponding to the light extraction surface S11 (S11A, S11B).Each of the light-reflecting films 15 (15A, 15B) reflects the light emitted by the corresponding light-emitting element 11 (11A, 11B) and improves the light extraction efficiency of the light-emitting element 11 (11A, 11B). The light-reflecting films 15 (15A, 15B) contain, for example, a metal such as aluminum (Al) or tungsten (W), or a metal compound.

[0028] The buried layer 16 is provided such that it fills a space between the adjacent light-emitting elements 11 (11A, 11B). The buried layer 16 has a thermal conductivity that is higher than the thermal conductivity of the base 20 (a thermal conductivity of the substrate 21 and a thermal conductivity of the wiring layer 22). The buried layer 16 preferably comprises a metal and / or a resin containing a metal filler. Examples of the metal or metal filler contained in the buried layer 16 include aluminum (Al), cobalt (Co), tungsten (W), copper (Cu), silver (Ag), and gold (Au). The buried layer 16 preferably includes a portion with a length of half or more of the distance between two adjacent light-emitting elements 11 in one arrangement direction of the multiple light-emitting elements 11. For example, as shown in Fig. Figure 1 illustrates that the buried layer 16, in an X-axis direction in which the light-emitting element 11A and the light-emitting element 11B are arranged, has a portion with a length L16 of half or more of the distance D11 between the light-emitting element 11A and the light-emitting element 11B. That is, it is desirable that the length L16 of the buried layer 16 be at most greater than half the distance D11.

[0029] The insulating layer 17 is provided such that it surrounds the periphery of the light-emitting elements 11 (11A and 11B). In particular, the insulating layer 17 is provided along the side surface of the first composite semiconductor layer 111 (111A, 111B), the side surface of the active layer 112 (112A, 112B), the side surface of the second composite semiconductor layer 113 (113A, 113B), and the surface of the first electrode 114 (114A, 114B) opposite the wiring layer 12. The insulating layer 17 comprises, for example, an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN), or silicon oxynitride (SiON). The insulation layer 19, for example, occupies a different area than the area between the multiple light-emitting elements 11 in the layer in which the multiple light-emitting elements 11 (11A, 11B) are provided.The insulation layer 19 also includes, for example, an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN) or silicon oxynitride (SiON). [1-2. Method for manufacturing the light emission device]

[0030] The light emission device 1 of the present embodiment can be manufactured, for example, as follows. Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. Figure 7 illustrates an example of the manufacturing steps of the light emission device 1.

[0031] First, the second composite semiconductor layer 113, the active layer 112, and the first composite semiconductor layer 111 are epitaxially grown on a growth substrate, such as a sapphire substrate. Then, for example, an electrically conductive film is formed on the first composite semiconductor layer 111 by a process such as vapor deposition, and subsequently, the electrically conductive film is selectively removed by lift-off. In this way, the multiple first electrodes 114 with a predetermined planar shape are formed.

[0032] Subsequently, after detachment of the growth substrate, the transparent electrode layer 14 is formed in such a way that it is in contact with the second composite semiconductor layer 113. The transparent electrode layer 14 can be obtained by forming indium tin oxide, for example, by a sputtering process or a vapor deposition process. The formed transparent electrode layer 14 can be processed into a predetermined shape by a wet etching process.

[0033] Then, as in Fig. As illustrated in Figure 2, the first composite semiconductor layer 111, the active layer 112, and the second composite semiconductor layer 113 are removed in a predetermined area, for example, by dry etching for selective etching to form several depressions U. This allows the multiple light-emitting elements 11 to be obtained.

[0034] Then, as in Fig. As illustrated in Figure 3, the insulating layer 17 is formed such that it covers the light-emitting element 11, i.e., it covers the side surface of the first composite semiconductor layer 111, the side surface of the active layer 112, the side surface of the second composite semiconductor layer 113, the surface of the first electrode 114, and the surface of the transparent electrode layer 14. After the insulating layer 17 has been formed, the light-reflecting film 15 is formed such that it overlaps the insulating layer 17. The light-reflecting film 15 can be formed, for example, by a chemical vapor deposition process or an atomic layer deposition process.

[0035] Then, as in Fig. Figure 4 illustrates that the recesses U are filled with the insulating layer 19, which is in contact with the light-reflecting film 15. Subsequently, a surface of the insulating layer 19 is planarized, for example by chemical-mechanical polishing (CMP), to expose the light-reflecting film 15. The insulating layer 19 contains, for example, an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN), or silicon oxynitride (SiON).

[0036] Then, as in Fig. Figure 5 illustrates a mask layer M that covers the insulating layer 19 and the surface of the light-emitting element 11, which is covered with the light-reflecting film 15. The mask layer M is, for example, a hard mask containing a metal silicide, such as polysilicon or tungsten silicide, a metal, a metal compound, or the like. Alternatively, the mask layer M can be formed, for example, by ion implantation or the like using a photoresist. The mask layer M has openings MK at predetermined locations that correspond to a portion of the wells U. The openings MK are formed, for example, by dry etching. Subsequently, portions of the insulating layer 19 are selectively removed by dry etching using the mask layer M as a mask, thereby exposing the light-reflecting film 15 of a portion of the wells U.

[0037] The mask layer M is then removed, after which the buried layer 16 is formed such that it covers the insulation layer 19 and the light-emitting element 11 covered with the light-reflecting film 15, as shown in Fig. Figure 6 illustrates this. Here, the buried layer 16 is formed in such a way that it fills the exposed depressions U.

[0038] Then, as in Fig. Figure 7 illustrates how a portion of the buried layer 16, except for the portions filling the depressions U, is removed. Then, a portion of the light-reflecting film 15 in contact with the first electrode 114 is selectively removed. The electrode plug 13 is positioned so that it is in contact with the exposed first electrode 114 and is coupled to the wiring layer 12. Thus, the Fig. 1 illustrated light emission device 1 completed. [1-3. [Functions and effects of the light emission device]

[0039] In the light emission device 1 of the present embodiment, light generated in each of the light emission elements 11 is emitted from the light extraction surface S11 based on the control of the control circuit 30 provided in the base 20. When light is generated in each of the light emission elements 11, heat is generated by the light emission elements 11. Heat accumulation in the light emission device 1 can potentially lead to malfunctions and impair the reliability of the control circuit 30. Therefore, in the light emission device 1 of the present embodiment, the buried layer 16, with a thermal conductivity higher than that of the base 20, is embedded at least partially between the adjacent light emission elements 11. Consequently, heat generated in the light emission elements 11 is efficiently transferred to the buried layer 16.As a result, in the light emission device 1 of the present embodiment, heat generated at the time of light emission by the light emission elements 11 is efficiently dissipated to the environment of the light emission device 1.

[0040] Therefore, according to the light emission device 1 of the present embodiment, stable light emission operation can be carried out and excellent operational reliability ensured even when the several highly integrated light emission elements 11 are provided. <2. Modification Examples>

[0041] Next, modification examples 1 to 3 and application examples of the present disclosure are described. It should be noted that components corresponding to those of the light emission device 1 according to the embodiment described above are identified by the same reference numerals and their description is omitted. [2-1. Modification example 1]

[0042] Fig. Figure 8 is a cross-sectional diagram that schematically illustrates an example of a cross-sectional configuration of a light emission device (a light emission device 2) according to modification example 1 of the present disclosure.

[0043] In the light emission device 2, a dummy electrode plug 43 and a dummy wiring layer 42 are additionally provided. The buried layer 16 is coupled to the dummy wiring layer 42 via the dummy electrode plug 43. Apart from this, the configuration of the light emission device 2 is essentially the same as the configuration of the light emission device 1 of the embodiment described above. The dummy electrode plug 43 preferably comprises the same component material as the electrode plug 13, and the dummy wiring layer 42 preferably comprises the same component material as the wiring layer 12. Furthermore, the periphery of the dummy electrode plug 43 and the dummy wiring layer 42 is preferably filled with the insulating layer 18. The wiring layer 12 of the light emission element 11 and the dummy wiring layer 42 are preferably provided in the same layer.

[0044] Here, the dummy wiring layer 42 corresponds to a specific example of a “dummy wiring layer” according to one aspect of the present disclosure. Furthermore, the dummy electrode plug 43 corresponds to a specific example of a “dummy electrode plug” according to one aspect of the present disclosure.

[0045] The provision of the dummy electrode plug 43 and the dummy wiring layer 42 makes it possible to dissipate heat transferred from the light emission element 11 to the buried layer 16 more efficiently to the environment of the light emission device 2. [2-2. Modification example 2]

[0046] Fig. Figure 9 is a cross-sectional diagram that schematically illustrates an example of a cross-sectional configuration of a light emission device (a light emission device 3) according to modification example 2 of the present disclosure.

[0047] In the light-emitting device 3, the buried layer 16 comprises an insulating film 161 and an electrically conductive film 162. Apart from this, the configuration of the light-emitting device 3 is essentially the same as the configuration of the light-emitting device 1 of the embodiment described above. In the light-emitting device 3, a first region R1 with a first width W1 in the X-axis direction and a second region R2 with a second width W2, which is wider than the first width W1, are located in the X-axis direction between the light-emitting element 11A and the light-emitting element 11B. Here, the insulating film 161 occupies the first region R1, and the electrically conductive film 162 occupies the second region R2.

[0048] The insulating film 161, for example, contains an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN) or silicon oxynitride (SiON).

[0049] The electrically conductive film 162 contains a metal and / or a resin containing a metal filler. For example, the electrically conductive film 162 contains a metal such as aluminum (Al), cobalt (Co), tungsten (W), copper (Cu), silver (Ag), and gold (Au), or a resin material containing a metal filler.

[0050] The light emission device 3 can be manufactured up to the step of forming the mask layer M by the same procedure as the light emission device 1. As in Fig. As illustrated in Figure 10, a portion of the insulating layer 19 is selectively removed using the masking layer M to form a depression UA. The insulating layer 19 remaining in the depression U is referred to as the insulating film 161. After forming the electrically conductive film 162 to fill the depression UA ​​and obtaining the buried layer 16, the light-emitting device 3 is formed by a similar procedure to that used for the light-emitting device 1. [2-3. Modification example 3]

[0051] Fig. Figure 11 is a cross-sectional diagram that schematically illustrates an example of a cross-sectional configuration of a light emission device (a light emission device 4) according to modification example 3 of the present disclosure.

[0052] In the light emission device 4, an insulating film 51 and a light-absorbing film 50 are additionally provided between the light-reflecting film 15 and the buried layer 16. Apart from this, the configuration of the light emission device 4 is essentially the same as the configuration of the light emission device 1 of the embodiment described above.

[0053] The insulating film 51 is positioned along and overlaps the light-reflecting film 15. The insulating film 51 includes, for example, an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN), or silicon oxynitride (SiON).

[0054] The light-absorbing film 50 is provided between the insulating film 51 and the buried layer 16 along the insulating film 51. The light-absorbing film 50 contains a light-absorbing material. For example, the light-absorbing film 50 can contain an insulating material such as silicon dioxide (SiOx), silicon nitride (SiN), or silicon oxynitride (SiON). Alternatively, the light-absorbing film 50 can contain a resin material. <3. Application Examples>(Application Example 1)

[0055] Fig. Figure 12 is a perspective diagram illustrating an example of the appearance of a picture display device (the head-mounted display 100) that uses the light-emitting device (for example, the light-emitting device 1) of the present disclosure. The head-mounted display 100 includes, for example, a spectacle-shaped display 120 and temples 122 on both sides of the spectacle-shaped display 120. The temples 122 are used to wear the head-mounted display 100 on a user's head. The light-emitting device (for example, the light-emitting device 1) of the present disclosure can be used for the display 120. (Application example 2)

[0056] Fig.Figure 13 is a perspective diagram illustrating another example of the appearance of an image display device (a head-mounted display 200) that uses the light-emitting device (for example, the light-emitting device 1) of the present disclosure. The head-mounted display 200 is a so-called see-through head-mounted display and includes a main body 221, an arm 222, and a lens tube 223. The head-mounted display 200 is, for example, attached to a pair of glasses 224. The main body 221 includes a control board that controls the operation of the head-mounted display 200 and a display. The display emits image light of a display image, and the light-emitting device (for example, the light-emitting device 1) of the present disclosure can be used. The arm 222 couples the main body 221 and the lens tube 223 and supports the lens tube 223.The lens tube 223 projects the image light supplied by the main body 221 via the arm 222 through lenses 225 of the glasses 224 to the eyes of the user.

[0057] Although the present disclosure has been described above with reference to the embodiment, modification examples 1 to 3, and application examples, the present disclosure is not limited to the embodiment and the like described above and can be modified in various ways. For example, an example has been described in the embodiment and the like described above in which the light emitted by the light-emitting element 11 is blue light or ultraviolet light, but it is not limited thereto. For example, a light-emitting element can also be used in the light-emitting device 1 in which two or more types of light, such as blue light and green light or ultraviolet light and green light, are emitted.

[0058] Furthermore, in the embodiments described above and the like, specific elements that configure the light emission device 1 and the like have been described; however, not all of these elements need to be included, and other elements may also be provided.

[0059] Furthermore, the modification examples 1 to 3 described above can optionally be combined with each other.

[0060] A light emission device according to one embodiment of the present disclosure comprises a base, a first light emission element and a second light emission element arranged on the base in such a manner that they are adjacent to one another, and a buried layer embedded in at least part between the first and second light emission elements, the layer having a thermal conductivity higher than that of the base. As a result, heat generated in the light emission elements is efficiently transferred to the buried layer. Therefore, stable light emission operation is possible.

[0061] It should be noted that the effects described here are merely examples and their description is not exhaustive; other effects may be provided.

[0062] The present disclosure may have any of the following configurations. (1) A light emission device comprising: a base; a first light-emitting element and a second light-emitting element, which are provided on the base in such a way that they are adjacent to each other; and a buried layer that is embedded in at least one part between the first light-emitting element and the second light-emitting element and has a thermal conductivity that is higher than the thermal conductivity of the base. (2) The light emission device according to (1), wherein in an arrangement direction in which the first light emission element and the second light emission element are arranged, the buried layer includes a portion with a length of half or more of the distance between the first light-emitting element and the second light-emitting element. (3) The light emission device according to (1) or (2), wherein the buried layer contains a metal and / or a resin containing a metal filler. (4) The light emission device according to any of (1) to (3), wherein the first light emission element and the second light emission element each have a stacked structure in which a first composite semiconductor layer of a first conductivity type, an active layer and a second composite semiconductor layer of a second conductivity type are stacked in that order. (5) The light emission device according to (4), which further comprises: a first electrode plug coupled to the first light emission element; a first wiring layer that is coupled to the first electrode plug and supplies a first voltage across the first electrode plug; a second electrode plug coupled to the second light-emitting element; and a second wiring layer that is coupled to the second electrode plug and supplies a second voltage across the second electrode plug. (6) The light emission device according to (5), which further comprises: a first light-reflecting film and a second light-reflecting film, wherein the first light-reflecting film in the first light-emitting element extends along a side surface of the first composite semiconductor layer, a side surface of the active layer, a side surface of the second composite semiconductor layer, and a surface of the second composite semiconductor layer opposite the first wiring layer, and reflects light emitted by the first light-emitting element, and The second light-reflecting film in the second light-emitting element extends along a side surface of the first composite semiconductor layer, a side surface of the active layer, a side surface of the second composite semiconductor layer, and a surface of the second composite semiconductor layer opposite the first wiring layer, and reflects light emitted by the second light-emitting element. (7) The light emission device according to any one of (1) to (6), wherein a metal contained in the buried layer comprises aluminium (Al) and / or cobalt (Co) and / or tungsten (W) and / or copper (Cu) and / or silver (Ag) and / or gold (Au). (8) The light emission device according to (5), which further comprises: a dummy electrode plug and a dummy wiring layer, wherein the buried layer is coupled to the dummy wiring layer above the dummy electrode plug. (9) The light emission device according to (8) wherein the first wiring layer, the second wiring layer and the dummy wiring layer are provided in the same layer. (10) The light emission device according to one of (1) to (9), wherein The buried layer contains an insulating film and an electrically conductive film. a first region with a first width in the arrangement direction in which the first light-emitting element and the second light-emitting element are arranged, and a second region with a second width that is wider than the first width, in the arrangement direction between the first light-emitting element and the second light-emitting element, and The insulating film occupies the first area and the electrically conductive film occupies the second area. (11) A picture display device comprising the following: a light emission device, the light emission device includes the following: a base; a first light-emitting element and a second light-emitting element, which are provided adjacent to each other on the base; and a buried layer that is embedded in at least one part between the first light-emitting element and the second light-emitting element and has a thermal conductivity that is higher than the thermal conductivity of the base.

[0063] The present application claims the benefits of the Japanese priority patent application JP 2023-129911, filed with the Japanese Patent Office on August 9, 2023, the entire contents of which are incorporated herein by reference.

[0064] Experts understand that various modifications, combinations, partial combinations and changes can be made depending on design requirements and other factors, provided that these are within the scope of protection of the attached claims or their equivalents. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] WO 2022 / 185976

[0003] JP 2023-129911

[0063]

Claims

Light emission device comprising: a base; a first light emission element and a second light emission element provided on the base such that they are adjacent to each other; and a buried layer embedded in at least one part between the first light emission element and the second light emission element, having a thermal conductivity higher than the thermal conductivity of the base. Light emission device according to claim 1, wherein in an arrangement direction in which the first light emission element and the second light emission element are arranged, the buried layer includes a portion having a length of half or more of a distance between the first light emission element and the second light emission element. Light emission device according to claim 1, wherein the buried layer includes a metal and / or a resin containing a metal filler. Light emission device according to claim 1, wherein the first light emission element and the second light emission element each have a stacked structure in which a first composite semiconductor layer of a first conductivity type, an active layer and a second composite semiconductor layer of a second conductivity type are stacked in that order. Light emission device according to claim 4, further comprising: a first electrode plug coupled to the first light emission element; a first wiring layer coupled to the first electrode plug and supplying a first voltage across the first electrode plug; a second electrode plug coupled to the second light emission element; and a second wiring layer coupled to the second electrode plug and supplying a second voltage across the second electrode plug. A light emission device according to claim 5, further comprising: a first light-reflecting film and a second light-reflecting film, wherein the first light-reflecting film extends in the first light emission element along a side surface of the first composite semiconductor layer, a side surface of the active layer, a side surface of the second composite semiconductor layer and a surface of the second composite semiconductor layer opposite the first wiring layer and reflects light emitted by the first light emission element, and wherein the second light-reflecting film extends in the second light emission element along a side surface of the first composite semiconductor layer, a side surface of the active layer, a side surface of the second composite semiconductor layer and a surface of the second composite semiconductor layer opposite the first wiring layer and reflects light.which is emitted by the second light-emitting element. Light emission device according to claim 1, wherein a metal contained in the buried layer comprises aluminium (Al) and / or cobalt (Co) and / or tungsten (W) and / or copper (Cu) and / or silver (Ag) and / or gold (Au). Light emission device according to claim 5, further comprising: a dummy electrode plug and a dummy wiring layer, wherein the buried layer is coupled to the dummy wiring layer via the dummy electrode plug. Light emission device according to claim 8, wherein the first wiring layer, the second wiring layer and the dummy wiring layer are provided in the same layer. Light emission device according to claim 1, wherein the buried layer comprises an insulating film and an electrically conductive film, a first region with a first width in an arrangement direction in which the first light emission element and the second light emission element are arranged, and a second region with a second width wider than the first width is present in the arrangement direction between the first light emission element and the second light emission element, and the insulating film occupies the first region and the electrically conductive film occupies the second region. Image display device comprising: a light emission device, wherein the light emission device comprises: a base; a first light emission element and a second light emission element provided adjacent to each other on the base; and a buried layer embedded in at least a portion between the first light emission element and the second light emission element, having a thermal conductivity higher than the thermal conductivity of the base.

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