Processing device, method for processing a melt, and method for processing a carrier fluid

Abstract

Different embodiments relate to a processing device, to a method for processing a melt, and to a method for processing a carrier fluid. The method for processing the melt can have the steps of: converting a solid starting material which is arranged in a crucible and has a parent nucleotide, into a melt of the starting material, said melt having a product of a nuclear transformation process of the parent nucleotide (810); forming a heterogenous mixture of the melt and a carrier fluid in order to dispense a chemical compound of the product, the gas transition temperature of which is lower than the temperature of the melt, from the melt into the carrier fluid, wherein the heterogenous mixture (820) is preferably formed within the crucible; and preferably separating the chemical compound from the carrier fluid (830).

Description

[0001] Processing device, method for processing a melt and method for processing a carrier fluid

[0002] Various embodiments relate to a processing device, a method for processing a melt and a method for processing a carrier fluid.

[0003] In general, radioactive nuclides are used in a wide variety of technical fields, one of which focuses on the utilization of the ionizing radiation produced by the radioactive decay of the nuclides. In addition to purely technical applications, such as quality assurance, radioactive nuclides are also finding increasing importance in medicine, including for diagnostic and / or therapeutic purposes.

[0004] In many applications, preparations containing short-lived radioactive nuclides are preferred. These are radioactive only during the actual application, or at least decay quickly afterward. Such radioactive nuclides have a short half-life, meaning they no longer emit any significant ionizing radiation after a short time. However, maintaining a stockpile of such preparations is difficult due to their short half-life (but also for radiation protection reasons), which is why such preparations are only manufactured shortly before their use.

[0005] The established manufacturing process takes advantage of the fact that a more stable parent nuclide (also referred to as the starting nuclide) of the radioactive nuclide often exists, which has a longer half-life than the radioactive nuclide, thus facilitating stockpiling. The parent nuclide steadily decays into the desired nuclide, so that the required quantities of the radioactive nuclide can be regularly extracted from it. Such parent nuclides are typically provided by nuclear reactors. According to various embodiments, it has been recognized that this manufacturing process could face supply problems in the future, as the current trend toward a reduction in active nuclear reactors also steadily reduces the production of suitable parent nuclides.

[0006] According to various embodiments, a method and a device are provided which facilitate the obtaining of a product of a nuclear transformation of a starting nuclide. It has been clearly recognized, among other things, that it can be technically very complex to separate the product of the nuclear transformation (also referred to as the transformation product) from the reaction mixture in which the transformation product is formed. If the reaction mixture is present as a solid, for example, the transformation product is generally difficult to release from the interior of the solid. This obstacle also exists, to a lesser extent, if the reaction mixture is present as a melt.

[0007] In this context, it was recognized that a heterogeneous mixture can be formed from the melt, which contains the conversion product and the starting nuclide, and a carrier fluid, which promotes the release of the conversion product from the melt. Among other things, the heterogeneous mixture increases the surface area at which the conversion product can be released. Furthermore, the formation of the heterogeneous mixture can stimulate mixing, so that the conversion product is more evenly distributed. To further promote this process, a chemical compound of the conversion product (e.g., a target nuclide compound), whose melting temperature (e.g., its gas transition temperature) is lower than a temperature of the melt, is released from the melt into the carrier fluid.

[0008] According to various embodiments, technetium is referred to as a transformation product (i.e., a product of the nuclear transformation process), for which there is a need in diagnostics and therapy, among other things. However, it can be understood that what is described with regard to technetium can also apply to a transformation product of a different type.

[0009] For the exemplary case of technetium (e.g. technetium-99, e.g. technetium-99m) as target nuclide and molybdenum (e.g. molybdenum-98, molybdenum-99 and / or molybdenum-100) as parent nuclide, it was recognized that their oxides not only differ in their evaporation temperatures, but also that the evaporation temperatures are such that they can be separated more easily from each other starting from a melt. The melt, which contains a homogeneous mixture of technetium oxide (e.g. ditechnetium heptooxide, TC2O7) as target nuclide compound and molybdenum oxide (e.g. molybdenum trioxide, MoOs) as starting nuclide compound, can be converted into a gas phase which contains a larger proportion of technetium oxide than the melt, so that technetium oxide can be enriched in the gas phase and further enriched therefrom by deposition.

[0010] Embodiments are shown in the figures and are explained in more detail below.

[0011] Figures 1 A to 1 F each schematically show different aspects of a crucible of a processing device according to different aspects in a schematic construction diagram.

[0012] Figures 2A and 2B each schematically show different aspects of a mixture formation device of a processing device according to different aspects in a schematic structural diagram.

[0013] Figures 3A to 3E each schematically show different aspects of a temperature control device of a processing device according to different aspects in a schematic structural diagram.

[0014] Figures 4A to 4D each schematically show different aspects of a separating device of a processing device according to different aspects in a schematic structural diagram.

[0015] Figures 5A to 5C each schematically show different aspects of a fluid transport device of a processing device according to different aspects in a schematic structural diagram.

[0016] Figures 6A to 6F each schematically show a processing device according to various aspects in a schematic construction diagram.

[0017] Figures 7A to 7C each schematically show a processing device according to various aspects in a schematic construction diagram.

[0018] Figure 7D schematically shows a bubble reactor according to various aspects. Figure 8 schematically shows a method for processing a melt according to various aspects in a schematic flow diagram.

[0019] Figure 9 schematically shows a method for processing a carrier fluid according to various aspects in a schematic flow diagram.

[0020] Figures 10 and 11 each schematically show a processing device in a working example according to different aspects in a schematic structure diagram.

[0021] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top," "bottom," "front," "back," "fore," "rear," etc., will be used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0022] The term "melt" herein refers to the liquid state (i.e., the liquid phase) of a material (starting material). To form the melt of the material (also referred to as melting), the material can be heated to a temperature above its melting temperature.

[0023] Heating (by supplying thermal energy) can be carried out, for example, using an electron beam, an ion beam, and / or heating elements. Melting can generally be understood as the conversion of a solid state (i.e., the solid phase) into a liquid state (i.e., the liquid phase).

[0024] The term “evaporation” herein refers to the conversion of a material into a gaseous state (i.e. into the gas phase), e.g. into a gas or vapor. In some embodiments, the evaporation may also comprise sublimation, for example when the material changes directly from the solid state (e.g. present as a solid) into the gas phase without assuming a liquid state (e.g. present as a liquid). To evaporate the material, the material may be heated to a temperature above a gas transition temperature (e.g. evaporation temperature or sublimation temperature). For example, the one or more evaporated constituents of the melt may be present in the form of gas bubbles within the melt and / or rise therein. For example, the gas bubbles may rise within the melt.

[0025] If the melt is a (e.g. homogeneous) liquid mixture, evaporation can result in the liquid mixture being converted into a gaseous mixture. This process depends on many parameters, including the composition of the melt and the associated gas transition temperature of the melt, the temperature of the melt, the gas transition temperature of the individual components of the melt, and the vapor pressure of the individual components of the melt. In general, the components of the mixture differ in their properties, such as gas transition temperature and vapor pressure. This favors the liquid mixture and the gaseous mixture, which are coexisting and converted into one another, differing in their chemical composition (provided they do not form an azeotrope). This difference can be exploited to separate these components from one another by evaporation.For example, of several components that differ from one another in their gas transition temperature, at least one component can evaporate from the melt if its gas transition temperature is lower than the temperature of the melt (also referred to as the melting temperature). For example, the gaseous mixture has a larger proportion of a component (e.g., one with a lower gas transition temperature) than the liquid mixture, so that the gaseous mixture is enriched with the component, while the proportion of the component in the liquid mixture decreases.

[0026] A crucible is understood here to be a vessel in which melting takes place. The crucible can, for example, have a crucible trough which has a hollow space (the so-called crucible interior) in which the (e.g. solid and / or liquid) starting material (then also referred to as evaporation material) can be accommodated. The upper opening of the crucible trough, which exposes the crucible interior, can also be referred to as the crucible outlet opening. The evaporation material evaporated in the crucible interior can flow out of the crucible outlet opening as a gas phase. Optionally, the crucible can have a shield surrounding the crucible trough, which inhibits the radiation of thermal energy from the crucible trough.

[0027] The crucible, or at least the crucible walls delimiting the crucible interior (e.g. also the crucible lid), can comprise or be formed from a material that is high-temperature resistant and / or chemically inert with respect to the starting material (also referred to as crucible material). The high-temperature resistant crucible material can, for example, have a transformation range (e.g. melting temperature or glass transition temperature) into a viscous (e.g. fluid) state of more than approximately 1000°C, e.g. more than approximately 1500°C. With regard to the evaporation material, the transformation range can be at least greater than the gas transition temperature of the evaporation material. Examples of the (e.g. high-temperature resistant) crucible material include: a dielectric, such as quartz glass or ceramic (e.g. comprising an oxide, a nitride and / or a carbide), graphite, metal (e.g. tungsten or steel). Examples of the ceramic include: porcelain, chamotte, alumina, zirconium oxide.Several different high-temperature-resistant materials can also be used. Optionally, the high-temperature-resistant material can be chemically inert, e.g., toward oxygen and / or the melt.

[0028] The term "fluid" can be understood as a material that continuously deforms under the influence of shear forces, for example, adapting to the shape of a vessel. For example, a fluid may offer no resistance to shear or only flow resistance (i.e., have a finite viscosity). For example, a fluid may be subject to the flow law above the yield point (current DIN 1342 as of February 2023). A fluid may be a gas and / or a liquid, or consist of both.

[0029] The term “carrier fluid” is used herein for a fluid that serves as a carrier (e.g. for transport) of another fluid, e.g. one or more components that are released from the melt into the carrier fluid. The carrier fluid can be configured such that it does not form a homogeneous mixture (e.g. no homogeneous phase) with the melt, e.g. it does not dissolve in the melt. For example, the carrier fluid can be inert towards the melt, but this does not necessarily have to be the case. For example, the carrier fluid can have a lower density than the melt. For example, the carrier fluid can rise in the melt. For example, the carrier fluid can float on the melt.

[0030] The carrier fluid can, for example, be gaseous (e.g. comprising a carrier gas) and / or liquid (e.g. comprising a carrier liquid). For example, the carrier fluid can comprise a gaseous chemical compound or more than one gaseous chemical compound (e.g. in the form of a gas mixture). Alternatively or additionally, the carrier fluid can comprise a liquid chemical compound or more than one liquid chemical compound (e.g. in the form of a liquid mixture). The carrier fluid can, for example, comprise or consist of molecular oxygen. The carrier fluid can, for example, comprise or consist of molecular nitrogen. The carrier fluid can, for example, comprise or consist of an inert gas.

[0031] The term "chemical compound" refers to a pure substance consisting of a combination of atoms of different chemical elements (also referred to as atomic species) (bonded together by chemical bonds). In contrast to a mixture, the atomic species of the chemical compound are in a fixed stoichiometric ratio. A substance consisting of different chemical compounds can also be referred to as a "mixture of substances" (or simply "mixture"). For example, the mixture can contain several different pure substances.

[0032] A mixture can, for example, be homogeneous or heterogeneous. In a homogeneous mixture, pure substances contained therein (e.g. a substance from a chemical compound or from an element) can exist in (the same) phase, e.g. by being mixed with one another at the molecular level or by being present uniformly within a crystalline structure. For example, the pure substances contained in a homogeneous mixture can have the same concentration at every location within a volume occupied by the homogeneous mixture. A homogeneous mixture can, for example, comprise (e.g. be) (among other things): a solution, an alloy, and / or a gas mixture.

[0033] Mixtures that are not homogeneous can be referred to as heterogeneous mixtures. The pure substances in a heterogeneous mixture can exist in coexisting phases.

[0034] For example, the coexisting phases of the heterogeneous mixture may be immiscible with each other, e.g., if they differ in their physical state. The heterogeneous mixture may comprise (e.g., be): a mixture, an emulsion, a suspension, an aerosol (e.g., smoke and / or mist).

[0035] The term “temperature control” in relation to an object, such as a substance (i.e. a pure substance and / or a mixture of substances) or a body, refers here to a process by means of which thermal energy is supplied to the object (also referred to as heating) or removed (also referred to as cooling), for example according to a specification and / or by means of a so-called temperature control device. The specification can, for example, be a desired temperature (also referred to as target temperature) of the object to which the actual temperature of the object is to be brought. For example, the object can be brought from an initial temperature to the target temperature. For example, the object can change its state of aggregation during temperature control.For example, the temperature control can be carried out by means of a control loop which converts the actual temperature detected by the sensor as an input variable into a control signal according to the target temperature to control the temperature control device.

[0036] For example, the substance can melt when heated from a temperature below its melting temperature to a temperature above its melting temperature. For example, the substance can solidify when cooled from a temperature above its solidification temperature to a temperature below its solidification temperature. The melting temperature can, but does not necessarily, correspond to the solidification temperature at which the material transitions into the solid phase.

[0037] For example, if a substance is heated from a temperature below its gas transition temperature (e.g., vaporization temperature) to a temperature above the gas transition temperature, the substance can become gaseous (e.g., evaporate). For example, if a substance is cooled from a temperature above its condensation temperature to a temperature below its gas transition temperature, the substance can condense. The vaporization temperature may, but does not necessarily, correspond to the condensation temperature at which the material transitions into the liquid phase.

[0038] The information explained here on temperatures, such as evaporation temperature, condensation temperature, melting temperature, solidification temperature can, unless otherwise stated, be understood as relating to the same pressure, e.g. the pressure under standard conditions (1.01325 bar). A nuclear transformation is understood here to be the transformation of an atomic nucleus (then also referred to as the parent nuclide) into one or more other atomic nuclei (then also referred to as daughter nuclides). The nuclear transformation can, for example, occur spontaneously (e.g. without external influences) and can then also be referred to as a spontaneous nuclear transformation. A spontaneous nuclear transformation is, for example, a transition of an atomic nucleus from a metastable state to a stable state and / or a radioactive decay of the atomic nucleus. The nuclear transformation can, for example, occur as a result of external influences, such as nuclear fission and / or nuclear fusion.The external influences may include (e.g. be) the collision of the atomic nucleus with another nucleus, a nuclear fragment, and / or a nucleon, and / or the absorption (or collision) with a photon.

[0039] In this context, the term "nuclear transformation process" refers to a single nuclear transformation or a series of consecutive nuclear transformations (e.g., a decay series), each of which uses a daughter nuclide to provide the parent nuclide for the subsequent nuclear transformation. In this context, the parent nuclide that forms the starting point of the nuclear transformation process is also called the parent nuclide, and the daughter nuclide of the nuclear transformation process, which is the product of the nuclear transformation process, is called the target nuclide. For example, technetium-99m (99mTc) can be produced from a nuclear transformation process using molybdenum as the parent nuclide (also called the molybdenum parent nuclide).

[0040] For example, the starting nuclide can be molybdenum-98. In this case, the nuclear conversion process can involve neutron capture of molybdenum-98 to molybdenum-99 and radioactive decay of molybdenum-99 (99Mo) with emission of an electron to technetium-99m. The captured neutron can, for example, be provided by a nuclear conversion process (e.g., radioactive decay) of a nuclide of the starting material. For example, the starting nuclide can be molybdenum-99. In this case, the nuclear conversion process can involve radioactive decay of molybdenum-99 to technetium-99m. For example, the starting nuclide can be molybdenum-100 (1000Mo). In this case, the nuclear transformation process may involve gamma capture (e.g., excitation) of molybdenum-100 to molybdenum-99, emitting a neutron, and radioactive decay of molybdenum-99 to technetium-99m.For example, the neutron emitted can stimulate the nuclear transformation process of molybdenum-98 to technetium-99m.

[0041] The term "mixture formation device" herein refers to a device configured to form a mixture. For this purpose, the mixture formation device can be configured to bring two or more substances (e.g., fluids) to which the mixture formation device is exposed or which are fed to the mixture formation device into contact with one another and thereby combine them to form a mixture, e.g., mixing them thoroughly. The mixture formation device can, for example, have one or more connections on the inlet side, by means of which a substance can be fed. Example implementations of the mixture formation device include: an injection pipe in a crucible, a perforated base plate of a crucible, a nozzle, a sprinkler.

[0042] By way of example, reference is made here to a mixture formation device by means of which a gas is introduced into a liquid (e.g., a melt) so that the gas bubbles through the liquid, thereby creating a phase interface between gas and liquid. It can be understood that what has been described here can apply analogously to the introduction of the liquid into the gas (e.g., by means of a sprinkler) to form an aerosol or the introduction of the liquid into another liquid. For example, the combination of the crucible and the mixture formation device can be configured as a bubble reactor. The bubble reactor is a robust design that can be constructed and scaled with little effort.

[0043] Fig. 1A schematically illustrates various aspects of a processing device 100, according to which the processing device 100 comprises a crucible 110. The crucible 110 can be configured to receive a starting material (also referred to as reaction material) and / or its melt 10.

[0044] Fig. 1B schematically illustrates various aspects of the processing device 100, according to which the starting material and / or a melt 10 of the starting material is arranged in the crucible 110. The starting material, e.g. its melt 10, can, for example, comprise a starting nuclide and / or a target nuclide. The target nuclide can, for example, arise and / or have arisen due to a nuclear transformation process of the starting nuclide. For example, the nuclear transformation process can be stimulated during the formation of the melt and / or thermal energy can be supplied to the melt. For example, the nuclear transformation process can take place in the starting material when it is solid and / or molten.

[0045] For example, the starting material, e.g., its melt 10, may comprise (e.g., consist of) one or more chemical compounds, of which at least one chemical compound comprises the starting nuclide (then also referred to as the starting nuclide compound) and / or at least one chemical compound 15 comprises the target nuclide (then also referred to as the target nuclide compound 15). In some cases, the starting material may be free of the target nuclide in a still unused state, e.g., if the nuclear transformation process does not occur spontaneously.

[0046] For example, the starting material may have a radioactive isotope as the starting nuclide.

[0047] For example, the starting material may comprise at least (e.g., enriched) molybdenum as the starting nuclide, e.g., molybdenum-98, molybdenum-99, and / or molybdenum-100. For example, the starting material may comprise (e.g., be) an oxide as the starting nuclide compound, e.g., molybdenum oxide (e.g., molybdenum trioxide, MoO2). For example, in the enriched molybdenum oxide, a proportion (e.g., a weight fraction, a volume fraction) of the molybdenum oxide comprising a specific molybdenum nuclide (e.g., molybdenum-98, molybdenum-99, and / or molybdenum-100) may be greater than 10% of the molybdenum oxide.

[0048] For example, a larger proportion (e.g., greater than 10%) may result in a larger production rate of the target nuclide.

[0049] For example, the target nuclide (i.e., the product of the nuclear transformation process) can be a stable or radioactive nuclide. For example, the target nuclide compound can comprise (e.g., be) technetium-15 and / or an oxide, e.g., technetium oxide (e.g., ditechnetium heptooxide, TC2O7). For example, the target nuclide can be technetium, e.g., technetium-99, e.g., technetium-99m. If the target nuclide is technetium-99 in its ground state instead of the metastable technetium-99m, the respective nuclear transformation process of the starting nuclide to the target nuclide also includes a de-excitation reaction of the metastable technetium-99m to its ground state, technetium-99, with the emission of a photon (also known as a gamma quantum).

[0050] Fig. 1C schematically illustrates various aspects of the processing device 100, according to which a carrier fluid can flow through the crucible and thereby absorb the target nuclide compound 15 released from the melt into the carrier fluid. The carrier fluid then flows into the crucible in a first state (also referred to as initial state 20) and flows out of the crucible in a second state (also referred to as enriched state 25 or loaded carrier fluid 25), in which the carrier fluid comprises a larger proportion of the target nuclide compound 15 and / or starting nuclide compound than in the initial state 20. The carrier fluid can be used, for example, to extract (separate) the target nuclide, e.g., as part of the target nuclide compound 15, from the melt 10. For example, the carrier fluid can flow through the melt 10 within the crucible 110 and thereby pick up the target nuclide compound, e.g., carry it along.It is understood that the carrier fluid in the initial state 20 may already comprise the target nuclide compound 15, e.g., if the carrier fluid flows in a circuit.

[0051] As it flows through the melt 10, the carrier fluid can entrain the target nuclide compound and / or parent nuclide compound. For example, the carrier fluid can entrain the target nuclide compound 15, e.g., individual molecules of the target nuclide compound 15 and / or parent nuclide compound, as it flows through the melt 10. Optionally, the target nuclide can chemically react with the carrier fluid to form the target nuclide compound. For example, the target nuclide compound can be formed due to a chemical reaction of the carrier fluid.

[0052] The loaded carrier fluid 25, after flowing through the melt 10, may comprise a larger proportion of the and / or starting nuclide compound and / or the target nuclide compound 15 than in the initial state 20. The processing device 100, e.g., the crucible 110, may, for example, be configured such that the carrier fluid, e.g., the loaded carrier fluid 25, can flow out of the crucible 110.

[0053] After the carrier fluid, e.g., the loaded carrier fluid 25, has left the crucible 110, it can be passed on to another component of the processing device 100, as described in detail herein. For example, the carrier fluid can be passed back into the crucible 110, and / or to a mixture formation device 120, and / or to a temperature control device 130, and / or to a separation device 140. For example, the carrier fluid can be conveyed within the processing device by means of a fluid transport device 150.

[0054] Fig. 1D schematically illustrates various aspects of the processing device 100, according to which the carrier fluid flows through the melt 10 and, e.g., as loaded carrier fluid 25, flows out of the crucible 110. The carrier fluid can, for example, be introduced into the melt 10 in a first section of the crucible 110, e.g., by means of a mixture formation device 120. For example, the carrier fluid can leave the crucible 110 again in a second section of the crucible 110, e.g., through an outlet opening. For example, the carrier fluid can flow within the crucible from the first section to the second section and, in the process, flow through the melt 10.

[0055] For example, the first section of the crucible 110 can be arranged below the second section of the crucible 110 (relative to a direction of gravity). This allows the carrier fluid to flow through the melt 10 from bottom to top, e.g., by the carrier fluid having a lower density than the melt 10 and / or due to a pressure with which the carrier fluid is forced into the melt 10.

[0056] According to various aspects, the carrier fluid can flow through the melt 10 and thereby stimulate convection of the melt 10, thereby mixing the material. For example, due to the flow, one or more components of the melt 10 can be extracted from the melt 10, e.g., absorbed into the carrier fluid, e.g., entrained by the carrier fluid. One of the one or more components can, for example, comprise the target nuclide compound. The mixing increases the efficiency with which the target nuclide is obtained.

[0057] For example, thorough mixing enables the extraction of even those parts of the target nuclide compound 15 from the melt 10 that are difficult to separate due to insufficient intrinsic motion of the melt 10. For example, the buoyancy of the target nuclide compound 15 within the melt 10 may be too low to allow it to rise efficiently. For example, the diffusion rate of the target nuclide compound 15 within the melt 10 may be too low to be efficiently separated from the melt 10 within a technically usable period of time. Flowing through the melt 15 promotes the absorption of the target nuclide compound 15 into the carrier fluid and thus its extraction from the melt 10.

[0058] In a first exemplary implementation, the target nuclide compound 15 can be present in dissolved form within the melt 10, e.g., when a melting temperature of the target nuclide compound 15 is lower than a temperature of the melt 10 (i.e., a melting temperature). For example, the target nuclide compound 15 can be entrained by the carrier fluid (e.g., in the form of drops or gaseous), e.g., absorbed thereby. Alternatively or additionally, the target nuclide compound 15 can be in the form of a gas that is released by and / or enclosed by the melt 10, e.g., when a gas transition temperature of the target nuclide compound 15 is lower than the melting temperature. For example, the gaseous target nuclide compound 15 can be entrained by the carrier fluid (e.g., in the form of gas bubbles), e.g., absorbed therein.

[0059] As a result of the carrier fluid flowing through the melt 10, the heterogeneous mixture 30 can form from the melt 10 and the carrier fluid. Exemplary implementations of the heterogeneous mixture 30 include: a mixture of melt and bubbles of the carrier fluid enclosed by the melt; a mixture (e.g., aerosol) of carrier fluid and droplets of the melt enclosed by the carrier fluid. The carrier fluid rising in the melt can, for example, rise in the form of bubbles. The carrier fluid emerging from the melt can, for example, entrain droplets of the melt (also referred to as ejecta). In an exemplary implementation of the heterogeneous mixture 30, it has a first volume fraction of melt and a second volume fraction of carrier fluid, which together, for example, amount to 100%. The first volume fraction can, for example, be less than 1% and / or greater than 20%.

[0060] An exemplary implementation of flow through the melt is explained below, in which the starting material comprises at least molybdenum oxide, e.g., molybdenum trioxide. Molybdenum oxide can have a melting temperature of 795°C (e.g., at 1.01325 bar ambient pressure) and a vaporization temperature of 1155°C (e.g., at 1.01325 bar ambient pressure). For example, the target nuclide compound 15 can be a technetium oxide, e.g., ditechnetium heptooxide. Technetium oxide can have a vaporization temperature of 310°C (e.g., at 1.01325 bar ambient pressure) and a melting temperature of 119°C (e.g., at 1.01325 bar ambient pressure). The vaporization temperature of the technetium oxide is thus lower than the vaporization temperature (and thus also the melting temperature) of the molybdenum oxide. As a result, technetium oxide can escape from the melt as a gas.It is understood that the melt temperature is set such that it is below the gas transition temperature of the molybdenum oxide, so that evaporation of the molybdenum oxide from the melt 10 is inhibited. The carrier fluid can, for example, comprise a gas such as an inert gas and / or oxygen. As the carrier fluid flows through the melt 10, it can (among other things) absorb (e.g., entrain) the gaseous technetium oxide. The carrier fluid, e.g., the loaded carrier fluid 25, can continue to flow to a surface of the melt 10. At the surface of the melt 10, the carrier fluid, e.g., the loaded carrier fluid, can separate from the melt 10 (illustratively, for example, by bubbling out).

[0061] According to various aspects, the crucible 110 can be configured so that the carrier fluid, e.g., the loaded carrier fluid 25, leaves the crucible 110. For example, the carrier fluid can leave the crucible 110 after it has flowed through the melt 10. Alternatively or additionally, the carrier fluid, e.g., the loaded carrier fluid 25, which has left the crucible 110, can be reintroduced into the melt 10 to flow through the melt (again). This allows, for example, a carrier fluid circuit 150 to be implemented, which allows the carrier fluid to be reused.

[0062] Fig. 1 E schematically illustrates various aspects of the processing device 100, according to which the crucible 110 has an outlet 111 through which the carrier fluid, e.g., the loaded carrier fluid 25, can flow out of the crucible 110. The outlet 111 (also referred to as the crucible outlet opening) can, for example, be arranged in the second section of the crucible 110 through which the carrier fluid leaves the crucible, cf. description of Fig. 1 C.

[0063] Optionally, the outlet 111 can implement a separation stage for separating the heterogeneous mixture (e.g., separating the liquid phase from the gaseous phase), for example, when gravity alone is not sufficient to separate the heterogeneous mixture. For example, the separation stage of the outlet 111 can comprise a filter, e.g., a droplet filter, a semipermeable membrane, an ion filter, etc. For example, the filter can be configured in the form of a grid, through which melt droplets are prevented from passing.

[0064] Fig.l F schematically illustrates various aspects of the processing device 100, according to which the crucible 110 has a plurality of outlets 111 through which the loaded carrier fluid can exit.

[0065] Fig. 2A shows various aspects of the processing device 100, according to which the processing device 100 comprises a mixture formation device 120. The mixture formation device 120 can be coupled to the crucible 110 and / or extend into it. Alternatively or additionally, the mixture formation device 120 can be integrated into the crucible 110 and / or arranged within the crucible 110. The mixture formation device 120 can be configured to stimulate the formation of the heterogeneous mixture 30, which comprises the carrier fluid and the melt (e.g., comprising the target nuclide compound 15).

[0066] The mixture formation device 120 can be configured to guide the carrier fluid into the crucible 110, e.g., into the melt 10, and / or to distribute it therein. As a result, the heterogeneous mixture 30 can form, for example. The mixture formation device 120 can be configured to additionally support the formation of the heterogeneous mixture 30, e.g., to support it mechanically. Optionally, the mixture formation device 120 can have a circulating element configured to circulate the melt. For example, the circulating element can be configured to circulate the melt mechanically. For example, the circulating element can have a blade, e.g., a paddle wheel.

[0067] Fig. 2B shows various aspects of the processing device 100, according to which the processing device 100 includes the mixture formation device 120. The mixture formation device 120 can, for example, be arranged on and / or in a wall of the crucible 110.

[0068] The mixture formation device 120 can, for example, have an inlet opening through which the carrier fluid can flow into the mixture formation device 120. For example, the carrier fluid can come into the mixture formation device 120 from a temperature control device 130, and / or a separation device 140, and / or a fluid transport device 150.

[0069] According to various aspects, the mixture formation device 120 can have one or more outlet openings through which the carrier fluid can flow out of the mixture formation device 120 into the crucible. For example, the plurality of outlet openings can be spatially distributed such that the carrier fluid can flow through them in different directions into the melt 10. Thus, for example, a thorough mixing of the melt 10 and / or a formation of the heterogeneous mixture 30 can be promoted. For example, the one or more outlet openings can be arranged within a cross-sectional area of ​​the crucible that is parallel to a surface of the melt 10. For example, the one or more outlet openings can be arranged laterally on the mixture formation device 120. For example, the one or more outlet openings can be arranged on the mixture formation device such that the carrier fluid flows laterally (e.g.relative to a direction of gravity) can flow out of the mixture formation device 120.

[0070] In some implementations, the carrier fluid, if it has a lower density than the melt 10, can rise within the melt 10. Alternatively or additionally, the carrier fluid can be pressed out of the mixture formation device 120 at a pressure (also referred to as mixture formation pressure) that promotes distribution of the carrier fluid within the melt 10. The mixture formation pressure can be, for example, between 0.5 bar and 2.0 bar. The mixture formation pressure can be, for example, a function of the absolute pressure of the carrier fluid above the melt (e.g., forming a helium atmosphere), a hydrostatic pressure of the melt, and / or a surface tension of the melt. For example, a helium atmosphere can be formed in a volume above the melt, which, for example, has a pressure between 100 mbar and 1 bar. For example, the hydrostatic pressure of the melt can be approximately 100 mbar (e.g.,for a MoO3 melt with a height of 300 mm).

[0071] According to various aspects, the carrier fluid can be used for material and / or thermal mixing of the melt 10. For example, an arrangement of the one or more outlet openings of the mixture formation device 120 can promote the material and / or thermal mixing of the melt by means of the carrier fluid.

[0072] Fig.3A schematically illustrates various aspects of a processing device 100, according to which the processing device 100 has a tempering device 130 which is configured to temper the melt 10, e.g. to influence a temperature of the melt (the so-called melt temperature) according to a target temperature.

[0073] For example, the temperature control device 130 can be configured to form the melt 10 and / or to maintain, increase, and / or reduce a temperature of the melt 10. For example, the temperature control device 130 can be configured to increase a temperature of the solid starting material arranged in the crucible to or above a melting temperature of the solid starting material, thereby melting it.

[0074] In an exemplary implementation, the temperature control device 130 is conductively and / or inductively coupled to the crucible 110, for example, if the temperature control device 130 is configured to supply the thermal energy to the melt by means of conduction and / or induction through the crucible. For example, the temperature control device 130 can be configured to change a temperature (e.g., an internal temperature) of the crucible 110. For example, the temperature of the crucible can be directly related to the melt temperature. This makes it possible, for example, to temperature-control the melt 10 using the temperature of the crucible 110. For example, a reduction in the temperature of the crucible 110 can lead to a reduction in the melt temperature. For example, an increase in the temperature of the crucible 110 can lead to an increase in the melt temperature.In another exemplary implementation, the tempering device 130 alternatively or in addition to the inductive and / or conductive coupling to the crucible 110 comprises an electron beam gun and / or is configured to bring the carrier gas to a temperature at which it flows into the melt, as will be explained in more detail later.

[0075] Fig. 3B schematically illustrates various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110 and the tempering device 130. The tempering device 130 can be configured to supply energy 40, e.g., thermal energy, to and / or remove energy from the melt 10 and / or the crucible 110. The energy 40 can be used to keep a temperature of the melt 10, ie, the melt temperature, constant, to increase it, and / or to decrease it.

[0076] For example, the melt temperature can be increased by increasing the thermal energy supplied to the melt. Thus, for example, the melt temperature can be brought to a temperature above the gas transition temperature of the target nuclide compound and / or the melting temperature of the starting material. Alternatively or additionally, the melt temperature can be reduced by reducing the thermal energy supplied to the melt. Thus, for example, the melt temperature can be brought to a temperature below a gas transition temperature of the starting material (e.g., the melt) and / or a component of the starting material (e.g., if it is a material mixture).

[0077] According to various aspects, the components of the temperature control device 130 discussed herein may be provided in a modular manner (i.e., in the form of one or more modules). Some exemplary modules of the temperature control device 130 are described below.

[0078] Fig. 3C schematically illustrates various aspects of the processing device 100, according to which the processing device 100 comprises the crucible 110 and a first module 131 of the tempering device 130. The first module 131 can be configured to temper the crucible 110 and / or the melt 10 by means of conduction and / or induction. For example, the first module 131 can be configured to transfer thermal energy 41 by means of induction and / or conduction to the melt 10 and / or directly to the crucible 110 (and thereby indirectly to the melt 10). For example, the first module 131 can have a resistive converter as a heating element and / or a heat exchanger as a cooling element (also referred to as a cooler). The converter can be arranged on the crucible 110 and / or within the crucible 110. This allows, for example, thermal energy to be transferred to the melt 10 for heating the melt 10 (directly and / or indirectly), e.g.for forming and / or heating the melt 10. The heat exchanger can be arranged on the crucible 110 and / or within the crucible 110. This allows, for example, thermal energy to be dissipated from the melt 10 (directly and / or indirectly), e.g., for cooling the melt 10.

[0079] Fig. 3D schematically illustrates various aspects of the processing device 100, according to which the processing device 100 comprises the crucible 110 and a second module 132 of the tempering device 130. The second module 132 can be configured to irradiate the melt 10 with ionizing radiation 42. For example, the melt 10 can be heated due to an interaction of a material of the melt with the ionizing radiation 42. For example, the melt 10 can be formed due to an interaction of the starting material with the ionizing radiation 42. For example, cooling of the melt 10 can be achieved by interrupting the irradiation with the ionizing radiation 42 as soon as the melt temperature exceeds a predetermined temperature.

[0080] According to various aspects, the ionizing radiation 42 may, for example, comprise electrons, ions, and / or photons having an energy (e.g., a maximum kinetic energy) of more than 1 MeV, e.g., more than 5 MeV, e.g., more than 10 MeV, e.g., more than 15 MeV, e.g., more than 20 MeV, e.g., more than 25 MeV, and / or between approximately 30 MeV and approximately 80 MeV (e.g., between approximately 40 MeV and approximately 80 MeV). For example, the ionizing radiation 42 may comprise electrons in the form of an electron beam. For example, in an energy spectrum of the electron beam, a number of electrons may be represented as a function of their respective kinetic energy. For example, a maximum of the energy spectrum of the electron beam may be between 30 MeV and 80 MeV (e.g., between 40 MeV and 80 MeV). For example, an optimal photon energy for an excitation (e.g.,Although the bremsstrahlung power (e.g., gamma absorption) of molybdenum-100 may be below 20 MeV, the bremsstrahlung power emitted by the electrons slowed down in molybdenum-100 can increase with approximately the sixth power of the electron energy. Thus, a higher electron energy (e.g., a maximum electron energy between 30 MeV and 80 MeV (e.g., between 40 MeV and 80 MeV)) can lead to a higher rate of nuclear transformation processes.

[0081] For example, the electrons of the electron beam may have an average electron energy. For example, an energy associated with the maximum of the energy spectrum may be the average electron energy. For example, an average value (e.g., harmonic mean, geometric mean, arithmetic mean) of the electron energies may be the average electron energy.

[0082] The ionizing radiation 42, e.g. the electron beam, can, for example, stimulate the nuclear transformation process of the starting nuclide, by which the target nuclide is formed.

[0083] In a preferred implementation, the second module 132 is configured to irradiate the starting material (e.g., the solid starting material and / or the melt of the starting material) with an electron beam. The electron beam can be decelerated in the starting material, generating thermal energy and the photons. The thermal energy can heat the starting material. This can, for example, melt the solid starting material and / or heat the melt. The resulting photons can, for example, excite the nuclear conversion process of the starting nuclide to the target nuclide. For example, the nuclear conversion process can include excitation (also referred to as "gamma capture"), in which the starting nuclide captures one of the photons, is excited thereby, and subsequently decays into one or more daughter nuclides.For example, the target nuclide may be one of the one or more daughter nuclides or may be produced by one or more nuclear transformation processes of one of the one or more daughter nuclides. In the preferred implementation, the second module 132 may, for example, comprise an electron beam gun. The electron beam (e.g., with a beam power of more than 10 kilowatts, e.g., with a beam power in a range of approximately 10 kW to approximately 100 kW) may be generated by means of the electron beam gun, e.g., with approximately 50 kW. For example, the electron beam may accelerate the electrons with a beam current of 1.25 mA to a maximum kinetic energy of between 30 MeV (resulting in a beam power of approximately 38 kW) and 80 MeV (resulting in a beam power of approximately 100 kW).The electron beam can be deflected transversely to its propagation direction, for example, by means of controlled and / or regulated magnetic and / or electric fields.

[0084] According to various aspects, the electron beam gun may comprise an electron beam source and an optional deflection device. The electron beam source may, for example, be configured to generate and / or emit the (e.g., directed) electron beam. The electron beam source may comprise an electron source configured to generate and / or emit electrons. The electron source, e.g., a thermal electron source, may, for example, comprise a cathode (e.g., made of tungsten or another temperature-resistant material) from which the electrons emerge (into free space, e.g., into a vacuum). For example, the cathode may comprise, or be made of, a ceramic, e.g., lanthanum hexaboride (Laße). For example, the ceramic may have a low work function for electrons, so that, for example, a higher electron beam density can be provided than with tungsten.

[0085] Furthermore, the electron beam source can comprise an electron beam accelerator that accelerates the electrons emitted by the cathode to higher energies. The electron beam accelerator has, for example, the configuration of a radio-frequency accelerator (e.g., a linear accelerator). The radio-frequency accelerator can, for example, comprise a combination of radio-frequency cavity resonators for accelerating the electrons and magnets for deflecting (e.g., for focusing and / or aligning) the electron beam. A supplied alternating voltage (e.g., an alternating voltage supplied by a power supply) can be adapted to the required beam power. For example, the beam-forming unit can comprise a collimator that is configured to laterally limit, i.e., collimate, the beam.

[0086] The electron beam source can be configured to generate an electron beam with a diameter (beam diameter) in a range from approximately 1 mm to approximately 6 mm and / or with a power between 10 kW and 100 kW (kilowatts). The beam diameter can, for example, describe the cylindrical region of the electron beam 23 in which 90% of the radiation flux is concentrated.

[0087] For example, the electron beam source can provide a beam power of more than 10 kW (e.g., more than approximately 20 kW, e.g., more than approximately 30 kW, e.g., more than approximately 40 kW), e.g., in a range from approximately 10 kW to approximately 100 kW. The electron beam gun can have a power supply coupled to the electron beam source. The power supply can supply electrical power to the electron beam source, e.g., according to the beam power or more. Alternatively or additionally, the power supply can be configured to provide an alternating electrical voltage in the form of a high voltage (accelerating voltage) of several thousand volts (V), e.g., in the kV range, and a high frequency in the megahertz and / or gigahertz range. For example, the high frequency and the high voltage can be adapted to a geometric dimension of the high-frequency cavity resonators.The power supply can supply the alternating voltage to the electron beam source, e.g., its beam-shaping unit, for accelerating the electrons. The electrical current and / or the electrical voltage provided by the power supply can define an electrical power that the power supply supplies to the electron beam source or that the electron beam source consumes. For example, the power supply can be configured to provide and supply to the electron beam source an electrical power that is equal to or greater than the beam power.

[0088] The deflection device can be configured to deflect the electron beam by an angle (also referred to as the deflection angle), for example, according to a deflection signal generated by a control device. By deflecting an electron beam, the power of the electron beam can be distributed.

[0089] It is understood that the principle of the electron beam gun can also be transferred analogously to an ion gun for generating an ion beam.

[0090] In an exemplary implementation, the second module 132 may, alternatively or in addition to the electron beam gun, comprise a photon source configured to irradiate the starting material (e.g., the solid starting material and / or the melt of the starting material) with photons (e.g., in the form of a photon beam). The photons of the photon beam may, for example, excite the nuclear conversion process of the starting nuclide to the target nuclide. For example, the nuclear conversion process may comprise excitation (also referred to as "gamma capture"), in which the starting nuclide captures one of the photons, is excited thereby, and subsequently decays into one or more daughter nuclides. For example, the target nuclide may be one of the one or more daughter nuclides or may be formed by one or more (other) nuclear conversion processes of one of the one or more daughter nuclides.

[0091] The photon source can, for example, be implemented by means of a braking device that is irradiated with the electron beam (or an ion beam). The braking device can be configured to slow down the electrons of the electron beam and to release the energy released thereby, at least partially, in the form of photons. When the electron beam is slowed down, photons can be generated that form the photon beam. The braking device can optionally comprise a collimator to collimate the photon beam. The braking device can, for example, be configured to deflect the electron beam, whereby photons are emitted (e.g., in the form of bremsstrahlung, e.g., in the form of synchrotron radiation). The braking device can, for example, be configured to completely slow down the electron beam. For example, the braking device can comprise a braking element in which the electron beam is completely absorbed.For example, the braking element may comprise (e.g. consist of) tungsten.

[0092] In a preferred embodiment, the melt, e.g., the MoO3 melt, is directly irradiated with the electron beam, which achieves higher efficiency in generating the target nuclide compound, e.g., containing technetium-99m, than irradiating the melt with photons (e.g., if the electrons are previously converted in a tungsten target by decelerating the electrons). For example, irradiation with electrons can promote the nuclear conversion process from the starting nuclide to the target nuclide more efficiently than irradiation with photons.

[0093] Fig. 3E schematically illustrates various aspects of the processing device 100, according to which the processing device 100 comprises the crucible 110 and a third module 133 of the tempering device 130. The third module 133 can be configured to convectively temper the melt 10 (e.g., by means of the carrier fluid). For example, the third module 133 can be configured to bring the carrier fluid to a temperature at which it flows into the melt 10. For example, the carrier fluid can be tempered (e.g., cooled or heated) according to a specification before it is fed into the melt 10 by means of the mixture formation device 120.

[0094] According to various aspects, the temperature-controlled carrier fluid can flow through the melt 10 and thus thermally mix it. While flowing through the melt 10, the carrier fluid can absorb thermal energy from the melt 10 and thereby cool the melt 10. Alternatively or additionally, the carrier fluid can transfer thermal energy to the melt 10 while flowing through the melt 10 and thereby heat the melt 10. This can, for example, reduce a thermal gradient within the melt. For example, this can homogenize a temperature distribution within the melt. This enables, among other things, the uniform temperature control of the melt 10.

[0095] For example, the third module 133 can have a resistive converter as a heating element for heating the carrier fluid. For example, the carrier fluid can flow around the heating element to thereby absorb thermal energy 43 from the heating element. The heated carrier fluid can then flow through the melt 10 and thereby transfer thermal energy 44 to the melt 10, thereby heating the melt 10.

[0096] Alternatively or additionally, the third module 133 can have a heat exchanger as a cooling element for cooling the carrier fluid (not shown). For example, the carrier fluid can flow around the cooling element to thereby transfer thermal energy to the cooling element. The cooled carrier fluid can then flow through the melt 10 and absorb thermal energy from the melt 10 to thereby cool the melt 10. According to various aspects, the third module 133 of the temperature control device 130 can be integrated into the mixture formation device 120. Alternatively, the third module 133 of the temperature control device 130 can be arranged upstream of the mixture formation device 120, so that the carrier fluid is temperature-controlled in the third module 133 before being distributed within the melt by means of the mixture formation device 120.

[0097] Fig. 4A schematically shows various aspects of the processing device 100, according to which the processing device 100 has one or more than one separation device 140. The separation device 140 can be configured to receive the carrier fluid, e.g., the loaded carrier fluid 25. The separation device 140 can be configured to (at least partially) separate the target nuclide compound 15 from the carrier fluid (also referred to as extraction), thereby reducing the proportion of the target nuclide compound 15 in the carrier fluid. The separation device 140 can further be configured to separate the target nuclide compound 15 separated from the carrier fluid from the remaining carrier fluid and to output them separately from one another.

[0098] Fig. 4B schematically shows various aspects of the processing device 100, according to which the or each separation device 140 of the processing device 100 comprises a separation stage 142. The or each separation stage 142 may be configured to separate a chemical compound associated with the separation stage 142, such as the target nuclide compound 15, from the carrier fluid. For example, the separation stage 142 may be specifically adapted to the chemical compound associated with the separation stage 142.

[0099] In a preferred implementation, the separation stage 142 has a cold trap (also referred to as a trap) which is configured to extract thermal energy from the carrier fluid. The cold trap can be arranged, for example, within a section and / or adjacent to a section of a flow channel through which the carrier fluid flows through the separation device 140. The cold trap can be configured to cool the carrier fluid to a temperature below a separation temperature. For example, the separation temperature can be the condensation temperature of the chemical compound assigned to the separation stage 142. As a result, the chemical compound can condense in the section and thus be separated, for example, from the (gaseous) carrier fluid. For example, the predetermined temperature can be lower than a solidification temperature of the predetermined chemical compound.This allows the predetermined chemical compound to solidify in the cold trap section and thus be separated from the carrier fluid, for example. This prevents, for example, a condensate of the chemical compound from being re-entrained by the (gaseous) carrier fluid.

[0100] For example, the target nuclide compound 15 can be separated (e.g., separated) from the carrier fluid at the cold trap, e.g., by condensing or solidifying at the cold trap. For example, the separation stage 142 can further comprise a collecting container in which the separated target nuclide compound 15 is collected. According to various aspects, it has been recognized that it may happen that the carrier fluid can also receive the starting nuclide compound 11 from the melt 10 in addition to the target nuclide compound 15. In this case, the separation device 140 can be configured to separate the starting nuclide compound 11 from the carrier fluid, as explained in more detail below.

[0101] Fig. 4C schematically shows various aspects of the processing device 100, according to which the processing device 100 comprises the separation device 140. The separation device 140 can sequentially separate several chemical compounds from the carrier fluid, e.g., first the starting nuclide compound 11 and then the target nuclide compound 15. The separation device 140 can, for example, be configured to collect and / or dispense the several chemical compounds separately from one another. The (remaining) carrier fluid can flow out of the separation device 140 after the separation of the several chemical compounds.

[0102] In an exemplary implementation, each of the plurality of chemical compounds can be separated from the carrier fluid by means of a separation stage configured for this purpose. The separation stages of the separation device 140 can be configured analogously to the separation stage according to the description of Fig. 3B, with each of the plurality of separation stages being configured specifically for the starting nuclide compound 11 or specifically for the target nuclide compound 15. This will be briefly described below using two separation stages as examples.

[0103] Fig. 4D schematically shows various aspects of the processing device 100, according to which the processing device 100 comprises a first separation stage 141 and a second separation stage 142. For example, the first separation stage 141 and the second separation stage 142 can be arranged one after the other (also referred to as downstream) with respect to a transport path along which the carrier fluid flows through the separation device 140. For example, the carrier fluid can first flow around and / or through the first separation stage 141 and then the second separation stage 142.

[0104] In an exemplary implementation, the first separation stage 141 and / or the second separation stage 142 can each have a cold trap. It is understood that successively arranged cold traps each cool the carrier fluid to a predetermined separation temperature. The separation temperature of the first separation stage 141 can be higher than the separation temperature of the second separation stage 142.

[0105] In the exemplary implementation, the first separation stage 141 can, for example, be configured to cool the carrier fluid to a first separation temperature which is lower than the condensation temperature of the starting nuclide compound 11, for example lower than the solidification temperature of the starting nuclide compound 11. As a result, for example, the starting nuclide compound 11 can be separated from the carrier fluid, e.g., the loaded carrier fluid 25, in the first separation stage 141, so that contamination of the subsequently separated target nuclide compound with the starting nuclide compound 11 can be reduced (e.g., prevented). For example, the first separation stage 141 can be connected on the output side to the crucible 110 by means of a return line, so that the separated starting nuclide compound 11 can be returned to the melt 10.In an exemplary implementation, the second separation stage 142 may, for example, be configured to cool the carrier fluid to a second separation temperature that is lower than the first separation temperature and / or than a condensation temperature of the target nuclide compound 15, e.g., lower than a solidification temperature of the target nuclide compound 15.

[0106] According to various aspects, the processing device 100 may further comprise a fluid transport device 150, which is explained below. Reference is made to the transport path along which the carrier fluid flows.

[0107] In an exemplary implementation, the fluid transport device 150 can have a plurality of lines (e.g. in the form of a pipe, a hose, or the like) through which the transport path runs, each line of which fluidically connects two components of the processing device 100 to one another. Furthermore, the fluid transport device 150 can have a pump configured to drive a flow of the carrier fluid along the transport path in order to transport it. Optionally, the fluid transport device 150, e.g. its lines, can implement at least one fluid circuit, as will be explained in more detail later. Each fluid circuit can be implemented by means of a self-contained partial path of the transport path. For example, the transport path can have two self-contained partial paths, such that two fluid circuits are implemented.

[0108] FIG.5A schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the fluid transport device 150.

[0109] In an exemplary implementation, the fluid transport device 150 can be fluidly coupled to the crucible 110, for example, to an inlet of the crucible 110 and / or the outlet 111 of the crucible. For example, the fluid transport device 150 can be configured to guide the loaded carrier fluid 25 from the outlet 111 of the crucible 110 to the separation device.

[0110] In the exemplary implementation, the fluid transport device 150 can be coupled to the inlet of the crucible 110, for example, via the mixture formation device 120. This simplifies the design.

[0111] In an exemplary implementation, a first fluid circuit 155 can provide a transport path that passes through the temperature control device 130, e.g., the third module 133 of the temperature control device 130. Alternatively or additionally, the transport path provided by the first fluid circuit 155 can pass through the mixture formation device 120.

[0112] Optionally, the fluid transport device 150 can have the transport fluid source 151s on the input side and the transport fluid storage 151d on the output side, which are spatially separated from each other. Alternatively or additionally, the fluid transport device 150 can be configured to supply at least a portion of the carrier fluid discharged by the separation device to the crucible 110, the melt 10. For this purpose, the fluid transport device 150 can, for example, implement a first fluid circuit 155.

[0113] In an exemplary implementation, the fluid transport device 150 may alternatively or additionally comprise the transport fluid source 151s (e.g., a container therefor) into which one end of the transport path opens. The transport fluid source 151s may be configured to provide the transport fluid in compressed form (e.g., liquid) and / or free of the target nuclide compound, which flows into the crucible. Alternatively or additionally, the fluid transport device 150 may comprise the transport fluid storage 151d, into which one end of the transport path opens. The transport fluid storage 151d may be configured to receive the transport fluid flowing out of the crucible 110.

[0114] FIG.5B schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the fluid transport device 150, which is further fluidly coupled to the separation device 140, so that the transport path runs through the separation device 140, e.g., through each separation stage thereof.

[0115] For example, the transport path provided by the fluid transport device 150, which exits the separation device 140 on the output side, can lead to the transport fluid storage 151d and / or to the crucible 110 (e.g., through the mixture formation device 120). For this purpose, the fluid transport device 150 can, for example, implement a second fluid circuit 156, by means of which the transport path runs from the crucible 110 to the separation device and then back to the crucible 110. Optionally, the transport path provided by the second fluid circuit 156 can run through the mixture formation device 120. For example, the transport path can lead through the third module 133, which makes it possible to temperature-control the carrier fluid before or while it flows into the crucible 110 and / or into the mixture formation device 120.

[0116] FIG.5C schematically shows various aspects of a processing device 100, according to which the fluid-conducting device 150 implements multiple fluid circuits, e.g., a first fluid circuit 155 and / or a second fluid circuit 156. For example, each of the fluid circuits can be configured to supply the carrier fluid to the crucible (e.g., flowing into the melt 10). This allows the heterogeneous mixture 30 to form, e.g., by means of the mixture-forming device 120, which promotes the carrier fluid's absorption of the target nuclide compound 15. The thus-loaded carrier fluid 25 can flow out of the crucible 110 after flowing through the melt 10.

[0117] The first fluid circuit 155 can be configured (analogously to Fig. 5A) to provide one or more self-contained sub-paths of the transport path, each sub-path passing through the crucible and optionally through the third module. A first sub-path can, for example, lead through the mixture formation device 120 and / or past the mixture formation device 120.

[0118] The second fluid circuit 156 can be configured to provide one or more self-contained sub-paths of the transport path, each sub-path passing through the crucible and the separation device 140. A first sub-path can, for example, pass through the mixture formation device 120 and / or a second sub-path can pass past the mixture formation device 120.

[0119] FIG.6A schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110 and the mixture formation device 120, which may each be configured and / or coupled to one another as described herein.

[0120] FIG.6B schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110 and the tempering device 130, which may each be configured and / or coupled to one another as described herein.

[0121] FIG.6C schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110 and the separating device 140, which may each be configured and / or coupled to one another as described herein.

[0122] FIG.6D schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110, the tempering device 130 and the mixture formation device 120, which may each be configured and / or coupled to one another as described herein.

[0123] FIG.6E schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110, the tempering device 130 and the separating device 140, which may each be configured and / or coupled to one another as described herein.

[0124] FIG.6F schematically shows various aspects of a processing device 100, according to which the processing device 100 comprises the crucible 110, the mixture formation device 120, the tempering device 130 and the separation device 140, which can each be configured and / or coupled to one another as described herein.

[0125] According to various aspects, the processing device 100 may optionally further comprise the fluid transport device 150, which provides a transport path or at least a partial path thereof through the crucible 110, the mixture formation device 120, the tempering device 130, and / or the separation device 140.

[0126] Fig. 7A shows various aspects of the processing device 100, according to which the processing device 100 comprises the crucible 110, the mixture formation device 120, the separation device 140, and the fluid transport device 150. During operation of the processing device 100, a melt 10 can be located in the crucible, through which a carrier fluid flows, so that the heterogeneous mixture 30 is formed within the crucible. The fluid transport device 150 can, for example, have a plurality of lines 152 that provide the transport path. A first of the plurality of lines 152 can implement the first fluid circuit 155, which provides a self-contained transport path through the crucible 110 and the mixture formation device 120. A first of the plurality of lines 152 can implement the second fluid circuit 156, which provides a self-contained transport path through the crucible 110 and the separation device 140.The separation device may have several separation stages, such as the first separation stage 141 and the second separation stage 142, which is arranged downstream of the first separation stage 141 (with respect to the transport path).

[0127] Fig.7B shows various aspects of the processing device 100, according to which the processing device is configured as explained in Fig.7A and additionally comprises the tempering device 130.

[0128] The temperature control device 130 can have the first module 131, the second module 132 and / or one or more than one third module 133 (also referred to as a pre-temperature control module), as described herein. The first module 132 can, for example, directly temperature control the melt 10, e.g., by means of a heating element and / or by means of a cooling element. The second module 132 can irradiate the melt 10 with ionizing radiation 42, e.g., with electrons, photons and / or ions. Depending on the type of ionizing radiation 42, the melt 10 can thus be heated and / or the nuclear transformation process for forming the target nuclide can be stimulated. The third module 133 can be configured to temperature control the carrier fluid before it flows into the crucible 110, e.g., into the melt 10.

[0129] For example, a first pre-tempering module 133-1 can be connected upstream of the mixture formation device 120 (relative to the transport path) so that the carrier fluid is tempered before it flows into the mixture formation device 120. For example, a second pre-tempering module 133-2 can be connected upstream of the crucible in parallel to the mixture formation device 120.

[0130] Fig.7C shows various aspects of the processing device 100, according to which the processing device 100 comprises a crucible 110, a mixture formation device 120, a tempering device 130, a separation device 140 and a fluid transport device 150.

[0131] The crucible 110 can be arranged, for example, in a housing 160 (e.g., a vacuum chamber). The housing 160 can be, for example, a vacuum housing, so that the crucible 110 can be operated within a vacuum. Optionally, the housing 160 can be cooled.

[0132] By way of example, it is shown how the carrier fluid flows through the melt 10 arranged in the crucible 110. The carrier fluid can be supplied to the melt 10 in a flowing manner from the mixture formation device 120. In this case, for example, the entire melt 10 in the crucible can be used to form the heterogeneous mixture 30. The carrier fluid can rise upwards and separate there from the heterogeneous mixture 30. For example, the fluid transport device 150 can have a pump 153, e.g., a hot air pump, and a line 152, by means of which the return of the carrier fluid from the crucible 110 to the mixture formation device 120 can be implemented. Thus, the fluid transport device 150 can implement the first fluid circuit 155, for example, by means of the line 152 and the pump 153, due to which the carrier fluid can flow through the melt 10, e.g., the heterogeneous mixture 30, again.For example, a device comprising or consisting of the crucible 110 and the mixture formation device 120 may be configured as a bubble reactor 700 (also referred to as a bubble column reactor 700) (see also Fig. 7D).

[0133] For example, the fluid transport device 150 can have an additional pump 153 and an additional line 152, by means of which the carrier fluid, e.g., the loaded carrier fluid 25, can be transported from the crucible 110 to the separation device 140 and / or through the separation device 140. Within the separation device 140, the carrier fluid, e.g., the loaded carrier fluid, can pass through a first separation stage 141 and a second separation stage 142. In the first separation stage 141, the carrier fluid can be separated from the starting nuclide compound 11, which can then, for example, be transported back into the crucible 110. In the second separation stage 142, the carrier fluid can be separated from the target nuclide compound 15.

[0134] After the carrier fluid has left the separation device 140, it can be passed through the third module 133 of the temperature control device 130 via the additional line 152. During this time, the carrier fluid can be temperature-controlled. The carrier fluid can then be fed back to the first fluid circuit 155. Thus, the additional line 152 and the additional pump 153 can implement the second fluid circuit 156.

[0135] For example, the temperature control device 130 can comprise the first module 131, which can be configured to temperature-control the crucible 110 (e.g., directly). The first module 131 can comprise, for example, a heating element and / or cooling element, which can be arranged around the crucible, e.g., helically or annularly. This is schematically illustrated by the circles, which represent a cross-section through the heating element and / or the cooling element.

[0136] For example, the temperature control device can comprise the second module 132, which can be configured to irradiate the melt 10 with ionizing radiation 42. Figure 7C shows, by way of example, that the second module 132 has an electron beam gun 132e, which provides an electron beam as ionizing radiation 42. The electron beam 42e can be stopped in the melt 10, thereby emitting photons and heating the melt 10. The photons can, for example, stimulate the nuclear transformation process of the starting nuclide.

[0137] The electron beam gun 132e may, for example, include an electron beam source 132e-1 that emits an electron beam 42e. The electron beam gun 132 may further include one or more optical elements for the electron beam 42e. Examples of an optical element include: a protective element 132e-2 that is transparent to the electron beam 42e, for example, a beryllium window; a diaphragm that is opaque to the electron beam 42e and has a through-opening that defines a desired beam cross-section.

[0138] Optionally, the electron beam gun 132e can have a deflection device 132e-3, by means of which the electron beam 42e can be deflected, e.g., in the direction of the melt 10. The deflection device 132e-3 reduces the contamination of the protective element transparent to the electron beam, e.g., a beryllium window, with gaseous material from the crucible and thus extends its service life.

[0139] Fig.7D shows schematically in a sectional view various aspects of a device which has the crucible 110 and the mixture formation device 120 and is configured as a bubble reactor 700, according to which the mixture formation device 120 is arranged (at least partially) within the crucible 120 or at least adjoins the crucible interior.

[0140] The bubble reactor 700 (e.g., its mixture formation device 120) may have a fluid inlet 122 (e.g., a gas inlet) that opens into the crucible interior. During operation of the bubble reactor 700, the carrier fluid 20 can be supplied to the crucible via the fluid inlet 122 (e.g., through it), so that it flows into the crucible 110. The fluid inlet 122 may, for example, be arranged in a bottom wall of the crucible or at least be adjacent to it.

[0141] The exemplary implementation of the fluid inlet 122 shown here can, for example, have a diffuser 123 (also referred to as a fluid distributor) which borders the crucible interior and / or fluidically connects an inlet of the fluid inlet 122 to the crucible interior. The diffuser 123 can have a plurality of outlet openings on the output side, which border the crucible interior. More generally, the diffuser 123 can be configured to convert a flow of the carrier fluid 20 into a plurality of separate sub-flows, which are fed to the crucible interior (e.g., to the melt 10 arranged therein). This can, for example, achieve better mixing of the carrier fluid 20 and the melt 10.

[0142] For example, each of the partial streams exiting the diffuser 123 can flow into the melt in the form of bubbles. For example, the diffuser 123 can have a plurality of outlet openings by means of which the flow of carrier fluid is dispersed.

[0143] The bubble reactor 700 can optionally have a separation channel 121w, which is arranged in the crucible interior (e.g., inserted into the crucible). The separation channel 121w can be penetrated by a first region 121 (also referred to as the channel interior 121) of the crucible interior along a direction 124 (also referred to as the ascent direction) away from the mixture formation device 120 (e.g., its fluid inlet 122) and surrounded by a second region of the crucible interior (also referred to as the backflow region). During operation of the bubble reactor 700, the ascent direction 124 can, for example, be counter to the direction of gravity. The separation channel can, for example, be tubular (also referred to as a column).

[0144] Within the channel interior 121, the heterogeneous mixture 30 (represented by dot hatching) can flow along the ascent direction 124, which promotes mixing. The separation channel 121w has one or more walls that laterally delimit the channel interior 121. The separation channel 121w promotes the heterogeneous mixture 30 flowing within the channel interior 121 along the ascent direction 124, and the melt 10 separated from the loaded carrier fluid 25 flows back to the mixture formation device. For example, the carrier fluid 20 can flow from the diffuser 123 toward 124 of the channel interior 121. In this case, the carrier fluid 20 can entrain a part of the melt 10, which is adjacent to the diffuser 123 or at least arranged between the diffuser 123 and the channel interior 121, into the channel interior 121 and thus support a flow within the crucible 110 (e.g. see flow along 124 and 125).The carrier fluid can flow through the separation channel 121w, whereby the heterogeneous mixture 30 is thoroughly mixed within the separation channel 121w, which promotes the transfer of the target nuclide compound 15 into the carrier fluid. As a result, the carrier fluid 20 can be enriched with the target nuclide compound 15 (not explicitly shown), as already described above. Thus, due to the resulting flow (e.g., in addition to the carrier fluid 20), the heterogeneous mixture 30 can also flow through the separation channel 121w, e.g., along direction 124.

[0145] Above the channel interior 121, the heterogeneous mixture 30 can flow out of the separation channel 121w. Furthermore, the carrier fluid can escape from the melt 10 and / or from the heterogeneous mixture 30, e.g., into an upper portion of the crucible interior, and subsequently flow out of the crucible 110, e.g., in an enriched state. The melt 10 can flow into the return flow region, which is arranged outside the separation channel 121w. For example, the return flow region can be arranged between the separation channel 121w (or at least one wall thereof) and a crucible wall. Within the return flow region, the melt 10 can flow back 125, e.g., toward the diffuser 123.

[0146] During operation, the melt 10 and / or the heterogeneous mixture 30 can be irradiated by ionizing radiation 42, e.g., by means of an electron beam. The ionizing radiation can, for example, interact with the melt 10 and / or the heterogeneous mixture 30 in a target region 42-t, thereby stimulating the nuclear transformation process of the starting nuclide.

[0147] Alternatively or additionally, the bubble reactor 700 can be coupled to the temperature control device 130 (e.g., its first module 131). For example, the bubble reactor 700, e.g., the crucible 110, can be coupled to one or more heating elements of the first module 131 (e.g., inductively) and / or the one or more heating elements can be at least partially integrated into the crucible. Alternatively or additionally, the bubble reactor 700, e.g., the crucible 110, can be coupled to one or more cooling elements of the first module 131 (e.g., conductively) and / or the one or more cooling elements can be at least partially integrated into the crucible. By way of example, Fig. 7D shows a plurality of cooling elements 131c integrated into the crucible wall in order to cool the crucible 110 and / or the melt 10.

[0148] Fig. 8 schematically shows a method 800 for processing a melt according to various aspects. The method comprises, in 810, converting a solid starting material arranged in a crucible and comprising a starting nuclide into a melt of the starting material. For example, the melt may comprise a product of a nuclear transformation process of the starting nuclide. Furthermore, the method 800 comprises, in 820, forming a heterogeneous mixture from the melt and a carrier fluid in order to release a chemical compound of the product, e.g., the target nuclide compound, from the melt into the carrier fluid. For example, a gas transition temperature of the chemical compound may be lower than a temperature of the melt. For example, the heterogeneous mixture may be formed within the crucible.

[0149] Furthermore, the method 800 comprises, in 830, separating the chemical compound from the carrier fluid.

[0150] Fig. 9 schematically shows a method 900 for processing a carrier fluid according to various aspects. The carrier fluid may comprise a chemical compound of a product of a nuclear transformation process, e.g., a target nuclide compound. The method may comprise, in 910, first separating a starting material from the carrier fluid. The starting material may comprise a starting nuclide of the nuclear transformation process. The first separation may be carried out, for example, by cooling the carrier fluid to a first temperature. For example, the first temperature may be lower than a solidification temperature of the starting material and higher than a gas transition temperature and / or a solidification temperature of the chemical compound.

[0151] The method 900 further comprises, at 920, a second separation step, in which the chemical compound is separated from a chemical composition of the carrier fluid resulting from the first separation step. For example, the second separation step can be performed by cooling the carrier fluid to a second temperature. The second temperature can be lower than a gas transition temperature and / or a solidification temperature of the chemical compound. The second temperature can also be lower than the first temperature.

[0152] Below (see Figures 10 and 11), various exemplary working examples are explained, which relate to what is described and illustrated herein, according to various aspects in which the direct production of 99mTc by photocleavage occurs. An enriched molybdenum trioxide melt is arranged in a columnar bubble reactor (also referred to as a bubble column reactor), is brought to a temperature in a range of approximately 850°C to approximately 950°C during operation, and is irradiated with an electron beam, e.g., a high-power electron beam (30 MeV to 80 MeV, approximately 38 kW to 100 kW).

[0153] The upper part of the bubble column reactor forms the crucible, and the lower part of the bubble column reactor forms the mixture formation device, by means of which the melt is gassed through a perforated base plate of the mixture formation device. The melt can be fed in cocurrent or countercurrent flow. The crucible is coupled to a cooling coil as a heat exchanger, through which helium is pumped at 1000 L / min at 50 bar. The upper part of the melt is subjected to a negative pressure of 200 mbar, which is generated by a hot gas pump acting as a fluid pump. The bubble column reactor is arranged in a water-cooled chamber. Within the melt, 99Mo is generated by photoproduction from 100Mo, which accumulates in the melt and decomposes into 99mTc. Technetium is oxidized to TC2O7, which is continuously evaporated from the melt and extracted by means of the gas cycle flowing through the bubble column reactor.

[0154] For a maximum ΔT of 100 K (850°C - 950°C), the MoO s melt can be circulated through a heat exchanger as a heating element at a flow rate of 7.25 liters per minute (l / min). The heat exchanger can, for example, have a capacity for 560 grams per second (g / s) of MoO s melt. The flow velocity in the melt is approximately 35-40 millimeters per second (mm / s).

[0155] For example, the electron beam can have an energy between 30 MeV (megaelectronvolts) and 80 MeV (e.g., between 40 MeV and 80 MeV) to achieve optimal efficiency for 99Mo production within the giant dipole resonance (GDR). However, higher energies could also be advantageous to increase the power density inside the reaction material. The GDR cross section of the molybdenum nuclei is about 50 times larger than that of oxygen nuclei in MoOs. GDR absorption is thus dominated by the molybdenum nuclei. An electron beam of 20 MeV (or 30 MeV, or 40 MeV) and the generated y-beam are completely absorbed in a 300 mm deep MoOs melt:

[0156] « 10 Radiation length e- in MoOs, and

[0157] « 5 Absorption length y in MoOs.

[0158] Oxygen has an approximately 30% influence on y-generation and / or y-absorption in MoOs compared to molybdenum alone and thus favors this process.

[0159] The production rate of Mo-99 by irradiation with an electron beam of 40 MeV is an order of magnitude lower when using natural Mo oxide (approximately 9% Mo-100 content) than when using pure Molybdenum-100 oxide.

[0160] Direct irradiation of the 100Mo oxide melt is significantly more efficient than indirect conversion in a converter (by a factor of 2 or more than 2).

[0161] A 50-kW plant could produce 99mTc with an activity of approximately 5 to 6 curies per hour. There is a high potential for the distillation process to remove any byproducts that may occur during irradiation of natural molybdenum targets. Natural molybdenum could be sufficient for the supply of medical-grade 99mTc.

[0162] Some examples are described below which relate to what is described herein and shown in the figures.

[0163] Example 1 is a method for processing a melt, the method may comprise: transferring a solid starting material arranged in a crucible and comprising a starting nuclide into a melt of the starting material (which is subjected to, for example, a negative pressure), the melt comprising a product of a nuclear transformation process of the starting nuclide (e.g., a product of one or more nuclear transformations originating from the starting nuclide); and forming a heterogeneous mixture from the melt and a carrier fluid in order to release a chemical compound of the product (e.g., a target nuclide compound), whose melting temperature (e.g., its gas transition temperature) is lower than a temperature of the melt, from the melt into the carrier fluid, the heterogeneous mixture being formed, for example, within the crucible.

[0164] Example 2 is a method according to Example 1 and / or Example 43, additionally comprising: separating the chemical compound from the carrier fluid, e.g. under vacuum.

[0165] Example 3 is a method according to Example 1 or 2 and / or Example 43, wherein the nuclear transformation process comprises at least one beta decay and / or is excited by means of gamma capture.

[0166] Example 4 is a method according to any one of Examples 1 to 3 and / or Example 43, which additionally comprises: exciting the nuclear transformation process using an electron beam. For example, the nuclear transformation process can be excited by irradiating the melt with the electron beam. Alternatively or additionally, the nuclear transformation process can be excited by slowing down the electron beam and irradiating the melt with the resulting photons.

[0167] Example 5 is a process according to any one of Examples 1 to 4 and / or Example 43, wherein the conversion of the solid starting material into the melt of the starting material is carried out by irradiating the solid starting material with an electron beam. For example, the solid starting material may melt due to the irradiation with the electron beam.

[0168] Example 6 is a method according to Example 4 or 5 and / or Example 43, wherein an acceleration voltage by means of which the electron beam is formed is less than 24 MV; and / or wherein an average electron energy of the electron beam is less than 24 MeV.

[0169] Example 7 is a process according to any one of Examples 1 to 6 and / or Example 43, wherein the starting nuclide is a nuclide of molybdenum (e.g., molybdenum-100, molybdenum-99, molybdenum-98) and / or wherein the product comprises technetium (e.g., technetium-99m, technetium-99).

[0170] Example 8 is a process according to any one of Examples 1 to 7 and / or Example 43, wherein the separation of the chemical compound from the carrier fluid is carried out by means of a cold trap.

[0171] Example 9 is a process according to any one of Examples 1 to 8 and / or Example 43, wherein the solid starting material and / or the melt comprises a chemical compound (e.g., an oxide of molybdenum, e.g., molybdenum trioxide) comprising the starting nuclide; and / or wherein the chemical compound of the product is an oxide, e.g., of technetium (e.g., ditechnetium heptooxide).

[0172] Example 10 is a method according to any one of Examples 1 to 9 and / or Example 43, wherein the carrier fluid comprises a gas, for example an inert gas and / or (e.g., molecular) oxygen, and / or a liquid. Example 11 is a method according to any one of Examples 1 to 10 and / or Example 43, wherein the carrier fluid comprises oxygen, for example, molecular oxygen.

[0173] Example 12 is a process according to any one of Examples 1 to 11 and / or Example 43, wherein the carrier fluid is gaseous.

[0174] Example 13 is a process according to any one of Examples 1 to 12 and / or Example 43, wherein the formation of the heterogeneous mixture occurs by introducing the carrier fluid, for example in the form of bubbles, into the melt (e.g., into the crucible). For example, the carrier fluid can be introduced into the melt in such a way that the carrier fluid is passed (e.g., flows) through the melt (e.g., through the crucible).

[0175] Example 14 is a process according to any one of Examples 1 to 13 and / or Example 43, wherein the separation of the chemical compound from the carrier fluid is carried out: by cooling the carrier fluid to a temperature which is less than or equal to the gas transition temperature (e.g., less than a solidification temperature) of the chemical compound of the product.

[0176] Example 15 is a process according to any one of Examples 1 to 14 and / or Example 43, wherein the separation of the chemical compound from the carrier fluid is carried out: by means of a (second) separation stage (e.g. a cold trap).

[0177] Example 16 is a process according to any one of Examples 1 to 15 and / or Example 43, which may optionally additionally comprise: separating the starting material from the carrier fluid.

[0178] Example 17 is a process according to Example 16 and / or Example 43, wherein the separation of the starting material from the carrier fluid is effected by cooling the carrier fluid to a temperature which is less than or equal to the solidification temperature of the starting material.

[0179] Example 18 is a process according to any one of Examples 1 to 17 and / or Example 43, wherein the separation of the starting material from the carrier fluid is carried out by means of an additional (e.g., first) separation stage (e.g., cold trap). For example, the additional (first) separation stage can be arranged upstream of the (second) separation stage.

[0180] Example 19 is a method according to any one of Examples 16 to 18 and / or Example 43, wherein a chemical composition of the carrier fluid resulting from the separation of the starting nuclide from the carrier fluid is fed to a separation stage by means of which the separation of the chemical compound from the carrier fluid is carried out.

[0181] Example 20 is a process according to any one of Examples 1 to 19 and / or Example 43, which may optionally additionally comprise: transporting starting material and / or the product by means of the carrier fluid, which is separated from the heterogeneous mixture, through a plurality of separation stages (e.g. cold traps), of which a first separation stage carries out the separation of the starting material from the carrier fluid and a second separation stage downstream of the first separation stage carries out the separation of the chemical compound from the carrier fluid.

[0182] Example 21 is using a mixture formation device (e.g., according to any one of Examples 1 to 20) to form a heterogeneous mixture of a carrier fluid and a melt arranged in a crucible, which melt comprises a starting nuclide of a nuclear transformation process, to release a chemical compound of a product of the nuclear transformation process, whose gas transition temperature is lower than a temperature of the melt, from the melt into the carrier fluid, wherein the heterogeneous mixture is formed, for example, within the crucible.

[0183] Example 22 is a processing device (e.g., operated according to any one of Examples 1 to 21) that may include: a crucible for receiving a melt of a starting material comprising a starting nuclide of a nuclear transformation process; a mixture formation device configured to form a heterogeneous mixture of the melt and a carrier fluid (e.g., within the crucible) to release a chemical compound of a product of the nuclear transformation process from the melt into the carrier fluid; and a temperature control device configured to bring the melt, during the formation of the heterogeneous mixture, to a temperature that is greater than an aggregate state transition temperature (e.g., melting temperature) of the starting material and / or greater than a gas transition temperature of the chemical compound. For example, the combination of the crucible and the mixture formation device may be configured as a bubble reactor.

[0184] Example 23 is a processing device according to Example 22 and / or Example 44, wherein the temperature control device is configured to temperature-control the melt using the carrier fluid and / or by induction. For example, the temperature control device can be configured to extract thermal energy from the carrier fluid and / or to supply thermal energy to the carrier fluid.

[0185] Example 24 is a processing device according to Example 22 or 23 and / or Example 44, which may optionally additionally comprise: a separation device configured to separate the chemical compound of the product of the nuclear conversion process from the carrier fluid, for example by cooling the carrier fluid to a temperature below a gas transition temperature (e.g. below a solidification temperature) of the chemical compound.

[0186] Example 25 is a processing device according to any one of Examples 22 to 24 and / or Example 44, which may optionally additionally comprise: a fluid transport device (e.g., which may comprise a fluid pump and / or fluid line) configured to transport the carrier fluid (e.g., within the processing device), for example, through the separation device, the temperature control device, and / or the mixture formation device. Example 26 is a processing device according to Example 25 and / or Example 44, wherein the fluid transport device is configured to transport the carrier fluid separated from the heterogeneous mixture through the separation device.

[0187] Example 27 is a processing device according to Example 25 or 26 and / or Example 44, wherein the fluid transport device is optionally further configured to supply the carrier fluid separated from the heterogeneous mixture and / or the carrier fluid transported through the separation device to the mixture formation device and / or the crucible.

[0188] Example 28 is a processing device according to any one of Examples 25 to 27 and / or Example 44, wherein the fluid transport device implements a first fluid circuit passing through the crucible.

[0189] Example 29 is a processing device according to Example 28 and / or Example 44, wherein the fluid transport device optionally further implements a second fluid circuit branching off from the first fluid circuit and passing through the separation device to the crucible and / or the mixture formation device.

[0190] Example 30 is a processing device according to any one of Examples 25 to 29 and / or Example 44, wherein the fluid transport device can implement a first fluid circuit configured to transport the carrier fluid (e.g., by means of the mixture formation device) through the crucible such that the melt and the carrier fluid form the heterogeneous mixture, wherein the carrier fluid is supplied to the crucible, for example, by means of the mixture formation device.

[0191] Example 31 is a processing device according to any one of Examples 24 to 30 and / or Example 44, wherein the separation device may comprise: a first separation stage configured to separate the starting material from the carrier fluid; and a second separation stage downstream of the first separation stage configured to separate the chemical compound of a product of the nuclear conversion process from the carrier fluid, wherein the chemical compound has a lower gas transition temperature than the starting material.

[0192] Example 32 is a processing device according to Example 31 and / or Example 44, wherein the first separation stage (e.g., a first cold trap) is configured to cool the carrier fluid to a first temperature that is less than a solidification temperature of the starting material and greater than a solidification temperature and / or a gas transition temperature of the chemical compound.

[0193] Example 33 is a processing device according to Example 31 or 32 and / or Example 44, wherein the second separation stage (e.g., a second cold trap) is configured to cool the carrier fluid to a second temperature that is less than a gas transition temperature and / or a solidification temperature of the chemical compound; and wherein the second temperature is less than the first temperature. Example 34 is a processing device according to any one of Examples 22 to 33 and / or Example 44, which may optionally additionally comprise: an electron beam source (e.g., an electron beam gun) configured to provide an electron beam for irradiating the crucible.

[0194] Example 35 is a processing device according to Example 34 and / or Example 44, wherein an acceleration voltage by means of which the electron beam is formed is less than 24 MV; and / or wherein an average electron energy of the electron beam is less than 24 MeV.

[0195] Example 36 is a processing device according to Example 34 or 35 and / or Example 44, wherein an average electron energy of the electron beam is configured to excite the nuclear conversion process, for example by means of gamma capture.

[0196] Example 37 is a processing device according to any one of Examples 22 to 36 and / or Example 44, wherein the crucible is columnar and / or has a plurality of columnar crucibles arranged one inside the other.

[0197] Example 38 is a processing device according to any one of Examples 22 to 37 and / or Example 44, wherein the mixture formation device comprises a fluid line and / or an opening opening into the crucible for supplying the carrier fluid into the crucible via the fluid line and / or the opening; and wherein the mixture formation device comprises, for example, a fluid pump configured to supply the carrier fluid to the fluid line.

[0198] Example 39 is a processing device according to any one of Examples 22 to 38 and / or Example 44, which may optionally additionally comprise: a control device configured to control the separation device and / or to control the temperature control device and / or to control the fluid transport device.

[0199] Example 40 is a processing device according to Example 39 and / or Example 44, wherein the control device is configured to control a temperature of the first separation stage and / or a temperature of the second separation stage, and / or wherein the control device is configured to control a temperature of the melt (e.g., by means of the tempering device).

[0200] Example 41 is a processing device according to Example 39 or 40 and / or Example 44, wherein the control device is configured to control a fluid pressure within the fluid transport device.

[0201] Example 42 is using the processing apparatus according to any one of Examples 22 to 41 to form the heterogeneous mixture of the carrier fluid and the melt comprising molybdenum as the starting nuclide and technetium as the product of the nuclear transformation process.

[0202] Example 43 is a method for processing a carrier fluid in which (e.g., in the carrier fluid) a chemical compound of a product of a nuclear transformation process is incorporated, the method may comprise: first separating a starting material comprising a starting nuclide of the nuclear transformation process from the carrier fluid by cooling the carrier fluid to a first temperature that is less than a solidification temperature of the starting material and greater than a gas transition temperature of the chemical compound, and second separating the chemical compound (e.g., the target nuclide compound) from a chemical composition of the carrier fluid resulting from the first separation by cooling the carrier fluid to a second temperature that is less than a gas transition temperature and / or less than a solidification temperature of the chemical compound and less than the first temperature.

[0203] The aspects of the embodiments described herein, in particular the exemplary embodiments of the methods according to any of Examples 1 to 25 (or at least the additional aspects thereof), may apply analogously to the method of Example 43.

[0204] Example 44 is a processing device that may comprise: a crucible for receiving a melt of a starting material comprising a starting nuclide of a nuclear transformation process; a mixture forming device that is configured to form a heterogeneous mixture of the melt and a carrier fluid, for example within the crucible; a plurality of separation stages (e.g.cold traps); and a fluid transport device configured to transport carrier fluid removed from the heterogeneous mixture through each of the plurality of separation stages, of which: a first separation stage of the plurality of separation stages is configured to separate the starting material from the carrier fluid; and a second separation stage of the plurality of separation stages, downstream of the first separation stage, is configured to separate a chemical compound of a product of the nuclear conversion process from the carrier fluid, wherein the chemical compound has a lower gas transition temperature than the starting material. For example, the combination of the crucible and the mixture formation device can be configured as a bubble reactor.

[0205] The aspects of the embodiments described herein, in particular the exemplary embodiments of the processing device according to any one of Examples 26 to 42 (or at least the additional aspects thereof), may apply analogously to the processing device of Example 44.

[0206] Example 45 is configured as any one of Examples 1 to 44, further comprising: a bubble reactor comprising the crucible and the mixture formation device, wherein the mixture formation device (e.g., a diffuser thereof) is preferably adjacent to an interior of the crucible (e.g., a bottom thereof), wherein preferably the bubble reactor has a (e.g., tubular) channel arranged within the crucible and extending (or at least the channel interior) away from the mixture formation device (e.g., toward an exit of the crucible).

Claims

Patent claims 1. A method (800) for processing a melt, comprising: • Transferring a solid starting material arranged in a crucible and comprising a starting nuclide into a melt of the starting material, the melt comprising a product of a nuclear transformation process of the starting nuclide (810); • forming a heterogeneous mixture of the melt and a carrier fluid to release a chemical compound of the product, whose gas transition temperature is lower than a temperature of the melt, from the melt into the carrier fluid, wherein the heterogeneous mixture (820) is preferably formed within the crucible; and • preferably separating the chemical compound from the carrier fluid (830).

2. The method (800) according to claim 1, wherein the nuclear transformation process comprises at least one beta decay and / or is excited by means of gamma capture.

3. The method (800) according to claim 1 or 2, further comprising: Stimulating the nuclear transformation process by means of an electron beam, preferably by irradiating the melt with the electron beam.

4. The method (800) according to any one of claims 1 to 3, wherein the formation of the heterogeneous mixture is carried out by means of: Introducing the carrier fluid, preferably in the form of bubbles, into the melt, preferably in such a way that the carrier fluid is passed through the melt.

5. The method (800) according to any one of claims 1 to 4, wherein the separation of the chemical compound from the carrier fluid is carried out: • by cooling the carrier fluid to a temperature which is less than or equal to the gas transition temperature of the chemical compound of the product.

6. The method (800) according to any one of claims 1 to 5, further comprising: • Separating a quantity of the starting material from the carrier fluid, preferably by cooling the carrier fluid to a temperature which is less than or equal to the solidification temperature of the starting material; • wherein preferably a chemical composition of the carrier fluid resulting from the separation of the starting nuclide from the carrier fluid is fed to a separation stage by means of which the separation of the chemical compound from the carrier fluid is carried out.

7. The method (800) according to any one of claims 1 to 6, further comprising: • Transporting starting material and / or the product by means of the carrier fluid, which is separated from the heterogeneous mixture, through several separation stages, of those: • a first separation stage separates the starting material from the carrier fluid, and • a second separation stage arranged downstream of the first separation stage separates the chemical compound from the carrier fluid.

8. Using a mixture formation device for forming a heterogeneous mixture of a carrier fluid and a melt arranged in a crucible, which melt comprises a starting nuclide of a nuclear transformation process, in order to release a chemical compound of a product of the nuclear transformation process, the gas transition temperature of which is lower than a temperature of the melt, from the melt into the carrier fluid, wherein the heterogeneous mixture is preferably formed within the crucible.

9. Processing device (100), comprising: • a crucible (110) for receiving a melt (10) of a starting material comprising a starting nuclide of a nuclear transformation process; • a mixture formation device (120) which is arranged to form a heterogeneous mixture (30) of the melt (10) and a carrier fluid (20), preferably within the crucible (110), in order to release a chemical compound (15) of a product of the nuclear transformation process from the melt (10) into the carrier fluid (20); and • a tempering device (130) which is configured to bring the melt (10) to a temperature which is greater than a melting temperature of the starting material when forming the heterogeneous mixture (30); • wherein preferably a combination of the crucible (110) and the mixture formation device (120) is configured as a bubble reactor (700).

10. Processing device (100) according to claim 9, further comprising: a separation device (140) configured to separate the chemical compound (15) from the carrier fluid (20), preferably by cooling the carrier fluid (20) below a gas transition temperature of the chemical compound (15).

11. Processing device (100) according to claim 10, further comprising: • a fluid transport device (150) which is arranged to transport the carrier fluid separated from the heterogeneous mixture through the separation device (140); and wherein preferably: • the fluid transport device (150) is further configured to supply the carrier fluid (20) separated from the heterogeneous mixture (30) and / or the carrier fluid (20) transported through the separation device (140) to the mixture formation device (120) and / or the crucible (110); and / or • the fluid transport device (150) implements a first fluid circuit (155) which passes through the crucible (110), from which a second fluid circuit (156) branches off, which through the separating device (140) to the crucible (110) and / or to the mixture forming device (120).

12. Processing device (100) according to one of claims 9 to 11, wherein the fluid transport device (150) implements a first fluid circuit (155) which is configured to transport the carrier fluid (20) through the crucible (110) by means of the mixture formation device (120) such that the melt (10) and the carrier fluid (20) form the heterogeneous mixture (30).

13. Using the processing device (100) according to one of claims 9 to 12 for forming the heterogeneous mixture (30) from the carrier fluid (20) and the melt (10) which comprises molybdenum as the starting nuclide and technetium as the product of the nuclear transformation process.

14. A method (900) for processing a carrier fluid in which a chemical compound of a product of a nuclear transformation process is incorporated, the method comprising: • first separation of a starting material which is a starting nuclide of the nuclear transformation process, from the carrier fluid by cooling the carrier fluid to a first temperature which is lower than a solidification temperature of the starting material and higher than a gas transition temperature of the chemical compound (910), and • second separation of the chemical compound from a chemical composition of the carrier fluid resulting from the first separation by cooling the carrier fluid to a second temperature which is lower than a gas transition temperature of the chemical compound and lower than the first temperature (920).

15. Processing device (100), comprising: • a crucible (110) for receiving a melt (10) of a starting material comprising a starting nuclide of a nuclear transformation process; • a mixture formation device (120) which is arranged to form a heterogeneous mixture (30) of the melt (10) and a carrier fluid (20), preferably within the crucible (110); • several separation stages; and • a fluid transport device (150) which is arranged to transport carrier fluid (20, 25) extracted from the heterogeneous mixture (30) through each of the plurality of separation stages, of which: • a first separation stage (141) of the plurality of separation stages is arranged to separate the starting material from the carrier fluid (20); and • a second separation stage (142) arranged downstream of the first separation stage (141) and configured to separate a chemical compound (15) of a product of the nuclear transformation process from the carrier fluid (20), wherein the chemical compound (15) has a lower gas transition temperature than the starting material.

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