Metasurface element and metasurface system

Abstract

Provided in the present disclosure is a metasurface element. The metasurface element comprises a radiation patch layer, which comprises a radiation patch, a first mode switching module and a second mode switching module, wherein the first mode switching module is located at the edge of the radiation patch, the second mode switching module is located in a slot in the radiation patch, and the state of the first mode switching module and the state of the second mode switching module are combined with each other to form a multi-bit control state. Further provided in the present disclosure is a metasurface system.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority from Chinese patent application No. 202310884171.4 filed on July 17, 2023, the entirety of which is incorporated hereby by reference.TECHNICAL FIELD

[0002] The present disclosure relates to the field of communications, and in particular, relates to a metasurface element and a metasurface system.BACKGROUND

[0003] The metasurface is widely researched due to the capability of regulating and controlling spatial electromagnetic waves with high efficiency and low cost. In particular, the metasurface may be combined with an adjustable device to form a reconfigurable metasurface, which can greatly improve the flexibility and be adapted to various different scenarios. Therefore, various reconfigurable metasurfaces, including high-frequency, low-frequency, multi-bit and multi-polarization reconfigurable metasurfaces and the like, have emerged in recent years.

[0004] Currently, adjustable devices which can be combined with the metasurface mainly include a separate-state adjustable device such as a PIN diode, and a continuous-state adjustable device such as a varactor. The PIN diode has lower loss and supports higher frequency bands, but has only two states, i.e., on and off. Therefore, a plurality of PIN diodes are needed to construct a multi-bit reconfigurable metasurface, and the larger the number of bits is, the more the PIN diodes needed are, so that higher loss is involved. Compared with the PIN diode, the varactor essentially has a multi-bit feature, but involves higher loss, and requires more complicated control especially in a multi-bit implementation.

[0005] In addition, for a transition from a single-polarized metasurface to a dual-polarized metasurface, the problems of polarization crosstalk, isolation between alternating current and direct current, surface waves and the like may occur, so that the problems of the loss being increased, control lines being increased, poor stability of performance and the like occur in the transition from the single-polarized metasurface to the dual-polarized metasurface.SUMMARY

[0006] The present disclosure provides a metasurface element, including a radiation patch layer, the radiation patch layer includes a radiation patch, a first mode switching module, and a second mode switching module, the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and a state of the first mode switching module is combined with a state of the second mode switching module to form a multi-bit control state.

[0007] The present disclosure provides a metasurface element, including a radiation patch layer, a radiation ground layer, a filter stub layer, a first ground layer, a control wiring layer, and a second ground layer which are sequentially stacked, the radiation patch layer includes a radiation patch, a first mode switching module, and a second mode switching module, the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and a state of the first mode switching module is combined with a state of the second mode switching module to form a multi-bit control state.

[0008] The present disclosure provides a metasurface system, including a plurality of metasurface elements as described above.BRIEF DESCRIPTION OF DRAWINGS

[0009] Accompanying drawings are provided for further understanding of the present disclosure and constitute a part of the specification. Hereinafter, the drawings are intended to explain the technical solutions of the present disclosure together with the following implementations, but should not be considered as a limitation to the present disclosure. In the drawings: FIG. 1A is a perspective view of a metasurface element according to an implementation of the present disclosure; FIG. 1B is a side view of a metasurface element according to an implementation of the present disclosure; FIG. 2 is an exploded perspective view of a metasurface element according to an implementation of the present disclosure; FIG. 3 is a top view of a radiation patch layer in a metasurface element according to an implementation of the present disclosure; FIG. 4 is a top view of a radiation ground layer in a metasurface element according to an implementation of the present disclosure; FIGs. 5 and 6 are top views of a filter stub layer in a metasurface element according to an implementation of the present disclosure; FIG. 7 is a top view of a control wiring layer in a metasurface element according to an implementation of the present disclosure; FIG. 8 is a logic topology of a metasurface element according to an implementation of the present disclosure; FIGs. 9 to 16 are equivalent circuit diagrams of metasurface elements according to implementations of the present disclosure; and FIG. 17 is a schematic diagram of a metasurface system according to an implementation of the present disclosure. DETAIL DESCRIPTION OF EMBODIMENTS

[0010] To improve understanding of the technical solutions of the present disclosure for those skilled in the art, example implementations will be described more sufficiently below with reference to the accompanying drawings, but may be implemented in different forms, and the present disclosure should not be construed as limited to the implementations set forth herein. These implementations are provided so that the present disclosure will be more thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art. It is to be understood that the figures are merely used to illustrate implementations of the present disclosure and that the dimensions of various elements or parts shown in the figures are not drawn to scale.

[0011] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0012] The terminology used herein is for the purpose of describing particular example implementations only, and is not intended to limit the claimed subject matter. As used herein, the singular forms "a", "an" and "the" also include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprise / include" and / or "comprising / including ...", used in this specification, specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0013] It will be understood that, although the terms "first", "second" and the like may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, a first element, component, region, layer or section discussed below may also be referred to as a second element, component, region, layer or section without departing from the teachings disclosed herein. In addition, the first element, component, region, layer or section in some implementations may be different from the first element, component, region, layer or section in other implementations.

[0014] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the presently disclosed subject matter belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meanings in the context of the relevant art and will not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.

[0015] It should also be understood that the description of features or aspects in each exemplary implementation should generally be considered applicable to other similar features or aspects in other exemplary implementations, unless the context clearly dictates otherwise. The various implementations of the present disclosure and various features therein may be combined with each other without conflict.

[0016] Chinese patent application with an application number of 202310074667.5 discloses a single-bit dual-polarized metasurface element and a metasurface system, and the disclosure of the application is incorporated by reference herein in its entirety.

[0017] To upgrade the single-bit dual-polarized metasurface to a multi-bit dual-polarized metasurface, according to the technical solution of the present disclosure, an operation mode of the radiation patch is to be changed by adding a short-circuit point at an edge of the radiation patch and slotting in the middle of the radiation patch, so that different phase responses may be made to incident electromagnetic waves, and the purpose of controlling space beamforming is achieved.

[0018] The present disclosure proposes a multi-bit dual-polarized reconfigurable smart metasurface for applications such as coverage hole filling and capacity supplementation in hotspot areas under a coverage of a wireless network.

[0019] An embodiment of the present disclosure provides a metasurface element. FIG. 1A is a perspective view of a metasurface element according to an implementation of the present disclosure, FIG. 1B is a side view of a metasurface element according to an implementation of the present disclosure, and FIG. 2 is an exploded perspective view of a metasurface element according to an implementation of the present disclosure.

[0020] Referring to FIGs. 1A, 1B and 2, the metasurface element according to an implementation of the present disclosure includes: a radiation patch layer 10, a radiation ground layer 20, a filter stub layer 30, a first ground layer 40, a control wiring layer 50, and a second ground layer 60.

[0021] The radiation patch layer 10 includes a radiation patch 101, a first mode switching module 110, and a second mode switching module 120.

[0022] The radiation patch 101, the first mode switching module 110 and the second mode switching module 120 together form a radiation structure of the metasurface element. By controlling on / off of adjustable devices (e.g., a first switch 103 and a second switch 107) in the mode switching modules, an operation mode of the radiation structure can be adjusted to adjust an electromagnetic response of the radiation structure. In other words, a state of the first mode switching module 110 may be combined with a state of the second mode switching module 120 to form a multi-bit control state. The radiation patch 101 may be in the form of a patch, a dipole, a slit, or the like, which is not particularly limited in the present disclosure.

[0023] FIG. 3 is a top view of a radiation patch layer in a metasurface element according to an implementation of the present disclosure, and FIG. 4 is a top view of a radiation ground layer in a metasurface element according to an implementation of the present disclosure.

[0024] Referring to FIGs. 2, 3 and 4, the first mode switching module 110 includes a first stub 102, a first switch 103, a second stub 104, and a first control channel 201.

[0025] As shown in FIGs. 2 and 3, the first stub 102 is connected to a side of the radiation patch 101, the second stub 104 is connected to the first control channel 201, and the first switch 103 is connected between the first stub 102 and the second stub 104. The state of the first mode switching module 110 may be changed by changing a first control loop jointly formed by the first control channel 201 and a third control channel 203 described later. The first control channel 201 may be selectively grounded or connected to a digital control interface at a back end as desired, so that the mode switching of the metasurface element can be implemented by controlling a short circuit and an open circuit of an edge current of the radiation patch 101. The structure of the first switch 103 is not particularly limited, may be a PIN diode, a switch, an MEMS transistor, a non-volatile device, or the like.

[0026] Referring to FIG. 3, the second mode switching module 120 includes a third stub 106, a second switch 107, a fourth stub 108, and a second control channel 202.

[0027] As shown in FIG. 3, a cross-shaped slot 109 is formed at a center of the radiation patch 101, and the second mode switching module 120 is located in the slot 109. The fourth stub 108 is connected to the radiation patch 101, the third stub 106 is connected to the second control channel 202, and the second switch 107 is connected between the third stub 106 and the fourth stub 108. The state of the second mode switching module 120 may be changed by changing a second control loop jointly formed by the second control channel 202 and a third control channel 203 described later. The second control channel 202 may be selectively grounded or connected to a digital control interface at a back end as desired, so that a path of a current on the radiation patch 101 may changed by controlling a short circuit and an open circuit of a current at the center of the radiation patch 101, to implement mode switching of the metasurface element. The structure of the second switch 107 is not limited, and may be a PIN diode, a switch, an MEMS transistor, a non-volatile device, or the like. The first mode switching module 110, the second mode switching module 120, and the slot 109 jointly form a mode adjustment structure of the metasurface element. The shape of the slot 109 is not limited to the cross shape shown in the drawings, but may include any shape such as an irregular polygon, a regular polygon, a circle, and the like, which is not particularly limited in the present disclosure.

[0028] The second switch 107 is introduced in the slot 109 located at the center of the radiation patch 101, and the flow path of the current is changed by turning on or off the second switch 107, thereby generating two modes. The first switch 103 is introduced at an edge of the radiation patch 101, and the current being maximum or minimum is enabled by turning on or off the first switch 103, thereby generating two modes. The multi-bit dual-polarization feature of the metasurface element may be realized by reasonably fine-tuning the modes. Hereinafter, the multi-bit dual-polarization feature of the metasurface element according to implementations of the present disclosure will be described in detail with reference to the accompanying drawings.

[0029] As shown in FIGs. 2 and 3, the radiation patch layer 10 further includes a microstrip frame 105, and conductive vias 205 are formed between the microstrip frame 105, and the radiation ground layer 20 and the first ground layer 40. The microstrip frame 105 and the conductive vias 205 jointly form a substrate back cavity surface wave suppression structure of the metasurface element, which is mainly configured to suppress surface waves in a metasurface array and improve the operation angle. The radiation patch 101 as a whole is arranged in a cavity jointly formed by the microstrip frame 105, the conductive vias 205 and the radiation ground layer 20, to suppress coupling among metasurface elements, and improve the large-angle scanning performance.

[0030] As shown in FIG. 4, a hole is formed in the radiation ground layer 20, through which the third control channel 203 and a fourth control channel 204 described later may pass, and the third control channel 203 may be connected to the radiation patch 101, to realize the dual-polarization feature of the metasurface element.

[0031] FIGs. 5 and 6 are top views of a filter stub layer in a metasurface element according to an implementation of the present disclosure.

[0032] In the implementation, the filter stub layer 30 includes a first filter stub layer and a second filter stub layer which are sequentially arranged. FIG. 5 shows a top view of the first filter stub layer, and FIG. 6 shows a top view of the second filter stub layer.

[0033] As shown in FIGs. 2 and 5, the first filter stub layer includes two rectangular first filter stubs 301 configured to isolate radio frequency signals from direct current signals (or digital signals) and reduce the radio frequency insertion loss. The two first filter stubs 301 are connected to two third control channels 203, respectively.

[0034] As shown in FIGs. 2 and 6, the second filter stub layer includes two sector-shaped second filter stubs 302 configured to further improve the isolation between radio frequency signals and direct current signals (or digital signals). The two sector-shaped second filter stubs 302 are connected to two third control channels 203, respectively.

[0035] The first filter stub 301 and the second filter stub 302 may be configured to reflect radio frequency waves in a same frequency band, or may be configured to reflect radio frequency waves in different bands. By providing multiple (e.g., two) layers of filter stubs, radio frequency waves can be better reflected to achieve better isolation between alternating current and direct current.

[0036] As shown in FIGs. 2, 5 and 6, in an implementation of the present disclosure, the first filter stub 301 is arranged in a rectangular shape, and the second filter stub 302 is arranged in a sector shape, but the present disclosure is not limited thereto, and the first filter stub 301 and the second filter stub 302 may have other shapes, for example, a polygonal shape or the like. The differences in shape and area of the filter stubs bring about a difference in frequency band to be reflected, and thus may be adjusted as desired. In addition, although, in the implementation of the present disclosure, the filter stub layer 30 is implemented as a first filter stub layer and a second filter stub layer, the present disclosure is not limited thereto, and the filter stub layer may include three or more layers.

[0037] As shown in FIGs. 2 and 6, the two third control channels 203 connected to the radiation patch 101 are combined through a combiner stub 303 to implement a co-control of dual polarization. The fourth control channel 204 is connected to the third control channel 203 through a control merging stub 304 (also referred to as a "remote stub").

[0038] The first filter stub layer, the second filter stub layer, the remote stub 304 and the fourth control channel 204 jointly form a double-layer remote alternating-current and direct-current isolation structure of the metasurface element, which is mainly configured to perform an isolation between alternating current and direct current and reduce radio frequency loss. In addition, the fourth control channel 204 may further assist the substrate back cavity surface wave suppression structure of the metasurface element to suppress surface waves.

[0039] FIG. 7 is a top view of a control wiring layer in a metasurface element according to an implementation of the present disclosure.

[0040] As shown in FIG. 7, the fourth control channel 204 may be connected to a control structure (not shown) in the control wiring layer 50 through a connection stub 501 in the control wiring layer 50.

[0041] According to the implementation of the present disclosure, a digital signal input to the radiation patch 101 through the control structure (not shown) in the control wiring layer 50 can enter the radiation patch 101 through the two third control channels 203, respectively; a dual-polarization radio frequency signal from the radiation patch 101 is split at the two third control channels 203, and reflected to the radiation patch 101 through two first filter stubs 301 and two second filter stubs 302, respectively, so as to avoid the mutual influence between the digital signal and the radio frequency signal, and prevent the radio frequency signal from being transmitted to the control structure to influence an operation of the control structure. In this way, an isolation between alternating current and direct current, i.e., an isolation between the digital signal and the radio frequency signal, can be achieved, and the problem of polarization crosstalk of the dual-polarized metasurface can be solved.

[0042] In addition, the control structure is connected to the two third control channels 203 through the fourth control channel 204, to extend the path from the control structure to the filter stub layer 30, and further reduce the remaining radio frequency signal after the radio frequency signal from the radiation patch 101 passes through the filter stub layer 30, thereby reducing the interference on the control structure.

[0043] In some implementations of the present disclosure, the two third control channels 203 are combined and then connected to the control structure (not shown) in the control wiring layer 50 via the fourth control channel 204, so that the control structure can be provided with only one port for controlling two polarizations, thereby reducing the number of ports to be provided. However, the present disclosure is not limited thereto. In other implementations of the present disclosure, the fourth control channel 204 may be omitted, and the two third control channels 203 may not be combined, but respectively connected to the control structure in the control wiring layer 50.

[0044] FIG. 8 is a logic topology of a metasurface element according to an implementation of the present disclosure.

[0045] As shown in FIG. 8, in the metasurface element according to an implementation of the present disclosure, a control mode in a form of total (control structure) - sub (two third control channels 203) - total (radiation patch 101) is adopted.

[0046] According to an implementation of the present disclosure, as shown in FIG. 2, a structure of the first ground layer 40 is substantially the same as that of the radiation ground layer 20, and therefore, is not repeatedly described in detail here. In addition, a structure of the second ground layer 60 is clearly shown in FIG. 2, and therefore, is not described in detail here.

[0047] The first control channel 201, the second control channel 202, the third control channel 203, the fourth control channel 204, the combiner stub 303 and the control merging stub 304 jointly form an integrated separation control structure of the metasurface element. Hereinafter, a detailed description of how to implement the multi-bit feature in the metasurface element according to implementations of the present disclosure particularly by the integrated separation control structure will be given with reference to the accompanying drawings.

[0048] FIGs. 9 to 16 are equivalent circuit diagrams of metasurface elements according to implementations of the present disclosure.

[0049] Referring to FIG. 9, the first switch 103 and the second switch 107 are in an opposite connection state, the first control channel 201 and the second control channel 202 may be both connected to the radiation ground layer 20, and a voltage of the radiation ground layer 20 is a first ground voltage greater than 0V.

[0050] In the context of the present application, the term "opposite connection state" means that the first switch 103 and the second switch 107 are connected to the radiation patch 101 in opposite directions. For example, as shown in FIG. 9, in response to the ground voltage connected to an end of the first switch 103 being higher than a voltage of the radiation patch 101 connected to another end of the first switch 103, the first switch 103 is turned on, and in response to the ground voltage connected to an end of the second switch 107 being higher than the voltage of the radiation patch 101 connected to another end of the second switch 107, the second switch 107 is turned off. In contrast, in response to the ground voltage connected to the end of the first switch 103 being lower than the voltage of the radiation patch 101 connected to the another end of the first switch 103, the first switch 103 is turned off, and in response to the ground voltage connected to the end of the second switch 107 being lower than the voltage of the radiation patch 101 connected to the another end of the second switch 107, the second switch 107 is turned on. In addition, a term "same connection state", that is to be mentioned below and is opposite to the term "opposite connection state", means that the first switch 103 and the second switch 107 are connected to the radiation patch 101 in a same direction.

[0051] As shown in FIG. 9, the first switch 103 and the second switch 107 are shown as diodes (e.g., PIN diodes), and assuming that the first switch 103 and the second switch 107 each are to be turned on under a voltage of 1.3V, then the first ground voltage is 1.3V. The first control channel 201 and the third control channel 203 form a first control loop to control a change of state of the first mode switching module 110; and the second control channel 202 and the third control channel 203 form a second control loop to control a change of state of the second mode switching module 120. The control structure in the control wiring layer 50 respectively outputs three states, i.e., 0V, 2.6V and a high impedance state (i.e., floating), to the radiation patch 101 through the third control channel 203. In response to the control structure outputting 0V, the voltage of the radiation patch 101 is 0V, the first switch 103 is turned on, and the second switch 107 is turned off, that is, the first control loop is conductive, and the second control loop is disconnected, which corresponds to the state of 10 of the metasurface element. In response to the control structure outputting 2.6V, the voltage of the radiation patch 101 is 2.6V, the first switch 103 is turned off, and the second switch 107 is turned on, that is, the first control loop is disconnected, and the second control loop is conductive, which corresponds to the state of 01 of the metasurface element. In response to the control structure outputting a high impedance state (i.e., the third control channel 203 is floating), no loop is formed through the first switch 103 and the second switch 107, and both the first switch 103 and the second switch 107 are turned off, that is, both the first control loop and the second control loop are disconnected, which corresponds to the state of 00 of the metasurface element. The three states 0V, 2.6V and the high impedance state output by the control structure respectively correspond to the three states of 10, 01 and 00 of the metasurface element, with a phase difference of 120° between every two states.

[0052] It should be appreciated that connection directions of the first switch 103 and the second switch 107 shown in FIG. 9 may be reversed as long as the first switch 103 and the second switch 107 are in an opposite connection state.

[0053] It should be further appreciated that, for the sake of clarity, due to the symmetry of the radiation patche, the control principle for only one polarization is shown in FIG. 9, i.e., only one third control channel 203, one first switch 103 and two second switches 107 are shown. The figures to be described below each show the control principle of only one polarization, which will not be explained again.

[0054] Referring to FIG. 10, the first switch 103 and the second switch 107 are in an opposite connection state, and the first control channel 201 and the second control channel 202 are connected to different ground voltages, respectively. For example, as shown in FIG. 10, the first switch 103 is connected to a second ground voltage greater than 0V, and the second switch 107 is connected to a ground voltage of 0V.

[0055] As shown in FIG. 10, the first switch 103 and the second switch 107 are shown as diodes (e.g., PIN diodes), and assuming that the first switch 103 and the second switch 107 each are to be turned on under a voltage of 1.3V, then the second ground voltage is 3.9V. The first control channel 201 and the third control channel 203 form a first control loop to control a change of state of the first mode switching module 110; and the second control channel 202 and the third control channel 203 form a second control loop to control a change of state of the second mode switching module 120. The control structure in the control wiring layer 50 respectively outputs three states, i.e., 0V, 3.9V and a high impedance state (i.e., floating), to the radiation patch 101 through the third control channel 203. In response to the control structure outputting 0V, the voltage of the radiation patch 101 is 0V, the first switch 103 is turned on, and the second switch 107 is turned off, that is, the first control loop is conductive, and the second control loop is disconnected, which corresponds to the state of 10 of the metasurface element. In response to the control structure outputting 3.9V, the voltage of the radiation patch 101 is 3.9V, the first switch 103 is turned off, and the second switch 107 is turned on, that is, the first control loop is disconnected, and the second control loop is conductive, which corresponds to the state of 01 of the metasurface element. In response to the control structure outputting a high impedance state (i.e., the third control channel 203 is floating), a loop is formed between the first switch 103 and the second switch 107, and both the first switch 103 and the second switch 107 are turned on, that is, both the first control loop and the second control loop are conductive, which corresponds to the state of 11 of the metasurface element. The three states 0V, 3.9V and the high impedance state output by the control structure respectively correspond to the three states of 10, 01 and 11 of the metasurface element, with a phase difference of 120° between every two states.

[0056] It should be appreciated that connection directions of the first switch 103 and the second switch 107 shown in FIG. 10 may be reversed as long as the first switch 103 and the second switch 107 are in an opposite connection state, and the ground voltages input are adjusted accordingly.

[0057] According to the implementations shown in FIGs. 9 and 10, a 1.5-bit feature of the metasurface element can be achieved, and only one control line (i.e., the combined third control channel 203) can enable the capability of regulating and controlling phases of the metasurface element, which results a low cost and a low power consumption.

[0058] Referring to FIG. 11, the first switch 103 and the second switch 107 are in a same connection state, and the first control channel 201 and the second control channel 202 are connected to two control ports in the control wiring layer 50, respectively.

[0059] As shown in FIG. 11, the first switch 103 and the second switch 107 are connected to the radiation patch 101 in a same direction. The first control channel 201 and the third control channel 203 form a first control loop to control a change of state of the first mode switching module 110; and the second control channel 202 and the third control channel 203 form a second control loop to control a change of state of the second mode switching module 120. By controlling voltages respectively connected to the first control channel 201, the second control channel 202 and the third control channel 203, both the first switch 103 and the second switch 107 may be turned off, i.e., both the first control loop and the second control loop are disconnected, which corresponds to the state of 00 of the metasurface element; the first switch 103 may be turned on, and the second switch 107 may be turned off, i.e., the first control loop is conductive, and the second control loop is disconnected, which corresponds to the state of 10 of the metasurface element; the first switch 103 may be turned off, and the second switch 107 may be turned on, i.e., the first control loop is disconnected, and the second control loop is conductive, which corresponds to the state of 01 of the metasurface element; and both the first switch 103 and the second switch 107 may be turned on, i.e., both the first control loop and the second control loop are conductive, which corresponds to the state of 11 of the metasurface element.

[0060] Referring to FIG. 12, the first switch 103 and the second switch 107 are in an opposite connection state, and the first control channel 201 and the second control channel 202 are connected to a ground voltage and a control port in the control wiring layer 50, respectively; or the first control channel 201 and the second control channel 202 are connected to two control ports in the control wiring layer 50, respectively.

[0061] It should be appreciated that FIG. 12 shows that the first control channel 201 and the second control channel 202 are connected to two control ports in the control wiring layer 50, respectively, but it is feasible that one of the first control channel 201 or the second control channel 202 receives a ground voltage, and the other of the first control channel 201 or the second control channel 202 is connected to a control port in the control wiring layer 50.

[0062] As shown in FIG. 12, the first switch 103 and the second switch 107 are connected to the radiation patch 101 in an opposite connection manner. The first control channel 201 and the third control channel 203 form a first control loop to control a change of state of the first mode switching module 110; and the second control channel 202 and the third control channel 203 form a second control loop to control a change of state of the second mode switching module 120. By controlling voltages respectively connected to the first control channel 201, the second control channel 202 and the third control channel 203, both the first switch 103 and the second switch 107 may be turned off, i.e., both the first control loop and the second control loop are disconnected, which corresponds to the state of 00 of the metasurface element; the first switch 103 may be turned on, and the second switch 107 may be turned off, i.e., the first control loop is conductive, and the second control loop is disconnected, which corresponds to the state of 10 of the metasurface element; the first switch 103 may be turned off, and the second switch 107 may be turned on, i.e., the first control loop is disconnected, and the second control loop is conductive, which corresponds to the state of 01 of the metasurface element; and both the first switch 103 and the second switch 107 may be turned on, i.e., both the first control loop and the second control loop are conductive, which corresponds to the state of 11 of the metasurface element.

[0063] It should be appreciated that connection directions of the first switch 103 and the second switch 107 shown in FIGs. 11 and 12 may be reversed.

[0064] According to the implementations shown in FIGs. 11 and 12, a 2-bit feature of the metasurface element can be achieved, and two (or more) control lines can enable a more powerful capability of regulating and controlling, which is adapted to application scenarios with higher expectations on performance.

[0065] The implementations shown in FIGs. 13 to 16 correspond to those shown in FIGs. 9 to 12, respectively, except that the two second switches 107 shown in FIGs. 9 to 12 are implemented as one second switch 107 in FIGs. 13 to 16, which can be implemented by replacing any adjacent two of four second switches 107 shown in FIG. 3 by a conductive structure (e.g., copper sheet), and reserving another two of the four second switches 107. In other respects, the implementations shown in FIGs. 13 to 16 are the same as, or correspond to, those shown in FIGs. 9 to 12, respectively, and thus are not repeated here.

[0066] According to the metasurface element of the present disclosure, the operation mode of the metasurface element can be changed by controlling the states of the switch devices or adjustable devices (such as the first switch 103 and the second switch 107), so that the phase response of the metasurface element to an electromagnetic field is changed, and the regulating and controlling on the spatial electromagnetic waves can be implemented. According to the metasurface element of the present disclosure, a multi-bit feature can be realized while ensuring stable performance without introducing any additional lamination layer or structure other than the radiation patch, and the loss of the metasurface element will not be deteriorated. The metasurface element of the present disclosure may be applied to capacity supplementation in hotspot areas and coverage hole filling, dynamic signal transmission and beamforming in a wireless network, and is a key technology of 6G communication technology. The metasurface element of the present disclosure can implement multi-bit dual-polarized regulation and control on spatial electromagnetic waves, and has a promising application prospect in the field of spatial channel regulation and control.

[0067] FIG. 17 is a schematic diagram of a metasurface system according to an implementation of the present disclosure.

[0068] An embodiment of the present disclosure provides a metasurface system, including a plurality of metasurface elements according to implementations of the present disclosure.

[0069] According to an implementation of the present disclosure, the plurality of metasurface elements are arranged in a matrix, but the present disclosure is not limited thereto. The arrangement mode of the plurality of metasurface elements may be set as desired, and the number of the plurality of metasurface elements are not limited in the present disclosure.

[0070] According to an implementation of the present disclosure, the plurality of metasurface elements may operate as an assembled array, and the assembled array may be controlled by one or more field programmable gate arrays (FPGAs), erasable programmable logic devices (EPLDs), digital signal processors (DSPs), or other logic chips.

[0071] According to the metasurface system of the present disclosure, the operation mode of each metasurface element can be changed by controlling the states of the switch devices or adjustable devices (such as the first switch 103 and the second switch 107) in the metasurface element, so that the phase response of the metasurface element to an electromagnetic field is changed, and the regulation and control on spatial electromagnetic waves can be implemented. According to the metasurface system of the present disclosure, a multi-bit feature can be realized while ensuring stable performance without introducing any additional lamination layer or structure other than the radiation patch in each metasurface element, and the loss of the metasurface element will not be deteriorated. The metasurface system of the present disclosure can be applied to capacity supplementation in hotspot areas and coverage hole filling, dynamic signal transmission and beamforming in a wireless network, and is a key technology of 6G communication technology. The metasurface system of the present disclosure can implement multi-bit dual-polarized regulation and control on spatial electromagnetic waves, and has a promising application prospect in the field of spatial channel regulation and control.

[0072] The present disclosure has disclosed exemplary implementations, and although particular terms are employed, they are used and should be interpreted merely in a generic and descriptive sense, not for purposes of limitating. In some instances, features, characteristics and / or elements described in connection with a particular implementation may be used alone, or may be used in combination with features, characteristics and / or elements described in connection with other implementations, unless expressly stated otherwise, as would be apparent to one skilled in the art. It will, therefore, be understood by those skilled in the art that various changes in form and details may be made without departing from the scope of the present disclosure as set forth in the appended claims.

Claims

1. A metasurface element, comprising a radiation patch layer, wherein the radiation patch layer comprises a radiation patch, a first mode switching module, and a second mode switching module, the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and wherein a state of the first mode switching module is combined with a state of the second mode switching module to form a multi-bit control state.

2. The metasurface element according to claim 1, wherein the first mode switching module comprises a first stub, a first switch, a second stub, and a first control channel, wherein the first stub is connected to a side of the radiation patch, the second stub is connected to the first control channel, and the first switch is connected between the first stub and the second stub.

3. The metasurface element according to claim 2, wherein the second mode switching module comprises a third stub, a second switch, a fourth stub, and a second control channel, wherein the fourth stub is connected to the radiation patch, the third stub is connected to the second control channel, and the second switch is connected between the third stub and the fourth stub.

4. The metasurface element according to claim 1, further comprising a radiation ground layer, wherein the radiation patch layer further comprises a microstrip frame, and a conductive via is formed between the microstrip frame and the radiation ground layer, and the radiation patch as a whole is arranged in a cavity jointly formed by the microstrip frame, the conductive via and the radiation ground layer.

5. The metasurface element according to claim 1, further comprising a filter stub layer, wherein the filter stub layer comprises a first filter stub layer and a second filter stub layer sequentially arranged.

6. The metasurface element according to claim 5, further comprising a control wiring layer and two third control channels, wherein the filter stub layer is disposed between the radiation patch layer and the control wiring layer, the radiation patch is connected to a control structure in the control wiring layer via the two third control channels, and the first filter stub layer and the second filter stub layer are connected to the two third control channels.

7. The metasurface element according to claim 6, wherein the first filter stub layer comprises two first filter stubs, the second filter stub layer comprises two second filter stubs, the two first filter stubs are connected to the two third control channels, respectively, and the two second filter stubs are connected to the two third control channels, respectively.

8. The metasurface element according to claim 7, wherein the two third control channels are combined into one third control channel at the filter stub layer, and the combined third control channel is connected to one port of the control structure in the control wiring layer.

9. The metasurface element according to claim 6, further comprising a fourth control channel, wherein the radiation patch is connected to the fourth control channel at the filter stub layer via the two third control channels, and the fourth control channel is connected to one port of the control structure in the control wiring layer.

10. The metasurface element according to claim 3, further comprising a radiation ground layer, wherein the first switch and the second switch are in an opposite connection state, the first control channel and the second control channel are both connected to the radiation ground layer, and a voltage of the radiation ground layer is a first ground voltage greater than 0V.

11. The metasurface element according to claim 3, wherein the first switch and the second switch are in an opposite connection state, one of the first control channel or the second control channel receives a ground voltage of 0V, and the other of the first control channel or the second control channel receives a second ground voltage greater than 0V.

12. The metasurface element according to claim 3, further comprising a control wiring layer, wherein the first switch and the second switch are in a same connection state, and the first control channel and the second control channel are connected to two control ports in the control wiring layer, respectively.

13. The metasurface element according to claim 3, further comprising a control wiring layer, wherein the first switch and the second switch are in an opposite connection state, one of the first control channel or the second control channel receives a ground voltage, and the other of the first control channel or the second control channel is connected to a control port in the control wiring layer; or, the first control channel and the second control channel are connected to two control ports in the control wiring layer, respectively.

14. A metasurface element, comprising a radiation patch layer, a radiation ground layer, a filter stub layer, a first ground layer, a control wiring layer, and a second ground layer sequentially stacked, wherein the radiation patch layer comprises a radiation patch, a first mode switching module, and a second mode switching module, the first mode switching module is located at an edge of the radiation patch, and the second mode switching module is located in a slot in the radiation patch, and wherein a state of the first mode switching module is combined with a state of the second mode switching module to form a multi-bit control state.

15. A metasurface system, comprising a plurality of metasurface elements according to any one of claims 1 to 14.

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