Image sensor

Abstract

Image Sensor This description relates to an image sensor comprising a plurality of pixels (100), each pixel having an unpinched photodiode (101) connected, by a metallic connecting element (103), to a pinched area (105) formed in a first semiconductor substrate. Figure for the abbreviation: Fig. 1

Claims

the thickness of the first substrate (201) from its upper face.

11. The sensor of claim 10, wherein the first semiconductor region (203) penetrates into the third semiconductor region (207).

12. A sensor according to any one of claims 1 to 10, wherein each pixel (700) further comprises a transistor (701) connected between the metal connection element (103) and the pinched area (105).

13. Sensor according to any one of claims 1 to 12, wherein the pixel (600) further comprises: - at least one first photosensitive zone (603) formed in the first substrate (601) and adapted to capture light in a first wavelength range; - a fourth semiconductor region (605) formed in the first substrate directly above said at least one photosensitive zone, in which the pinched zone (105) is formed; - at least one charge collection zone (613) arranged on the side (601T) of the second substrate opposite said at least one first photosensitive zone; - at least one transfer region extending from said at least one first photosensitive zone to said at least one charge collection zone; and - at least one transfer gate (610) extending vertically between said at least one transfer region and the fourth semiconductor region and laterally bordering said at least one transfer region.

14. A sensor according to claim 13, wherein the unpinched photodiode (101) is adapted to sense light in a second wavelength range, different from the first wavelength range.

15. Sensor according to claim 13 or 14, wherein the pixel (600) further comprises at least one other transfer gate (621) extending laterally on said side (601T) of the first substrate (601) opposite said at least one first photosensitive zone (603) and at least one other charge collection zone (619).

16. A sensor according to any one of claims 1 to 15, wherein the pinched area (105) is not intended to be subjected to incident light radiation. [Fig. 2] [Fig. 3] Fig 1 [Fig. 4A] Fig 4A [Fig. 4B] 401 ô b o TG | [RST| 0“ Vp i IPH i O O O o o — 75 O"O'----------- O O O a o o o o o 401 O O O G O O —-o o o ~^o o oj VPH / S i ! j ! I ----------> | ! ----------------i o i S î ! ! i 1 1 1 ! 1 ! 1 i ! ï ! ! i ! i --) ! i ! i i ! i ! f ! S i O ! i L / b"""" SN' ! Hg4B [Fig. 4C] 401 .A 6 bo | IPH | TG x____________ RST| Vp *oooooooo O Ô Ô ooooooooooooo 401 ooo V" 'O oo ~>oo oj 5 0 0 0 0 1 ( OOOOO 1 / XO 0 0 0-7 ! ii S ! î ! i 1 ! ! i VPH i / SN Fig. 4C [Fig. 4D] [Fig. 6A] [Fig. 6B] Fig. 6A Fig. 6B

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