Inspection apparatus, template manufacturing method, and template inspection method

Abstract

To perform a defect inspection of a plurality of patterns having a different height with high accuracy.SOLUTION: An inspection device of an embodiment, is an inspection device that performs a defect inspection of a sample having a plurality of patterns of which a height from a reference surface is different, and comprises: an imaging part that images the plurality of patterns; a focal point determination part that determines a plurality of focal positions for focusing a focal point of the imaging part in a height direction of the plurality of patterns; an image acquisition part that causes the imaging part to image a plurality of images obtained by imaging the plurality of patterns from the height direction, the plurality of images of which the focal point being focused in each of the plurality of focal positions; an image composition part that generates a composition image by extracting a region containing a pattern of which the focal point of the plurality of patterns is focused from each of the plurality of images; and a defect determination part that performs an inspection of a defect of the sample from the composite image.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to an inspection apparatus, a template manufacturing method, and an inspection method. [Background technology]

[0002] In manufacturing a semiconductor device, a defect inspection may be performed on a template having a plurality of patterns with different heights, or on a semiconductor device onto which the pattern of the template is transferred, etc. In the defect inspection, a method may be adopted in which a predetermined range of an inspection target is imaged from above and a plurality of patterns included in the image are compared with each other.

[0003] However, since multiple patterns have different heights, it may be difficult to focus on all the patterns in the image, and the inspection accuracy may decrease for patterns in the out-of-focus image portions. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2017-129385 A Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment is to provide an inspection apparatus, a template manufacturing method, and an inspection method that are capable of performing defect inspection of a plurality of patterns having different heights with high accuracy. [Means for solving the problem]

[0006] The inspection apparatus of the embodiment is an inspection apparatus that performs defect inspection on a sample having a plurality of patterns having different heights from a reference plane, and includes an imaging unit that images the plurality of patterns, a focus determination unit that determines a plurality of focal positions to focus the imaging unit in the height direction of the plurality of patterns, an image acquisition unit that causes the imaging unit to capture a plurality of images of the plurality of patterns imaged from the height direction, the images being focused at each of the plurality of focal positions, an image synthesis unit that extracts an area including a pattern that is in focus among the plurality of patterns from each of the plurality of images to generate a composite image, and a defect determination unit that inspects the sample for defects from the composite image. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing an example of a configuration of an inspection apparatus according to an embodiment. [Diagram 2] FIG. 4 is a block diagram showing an example of a functional configuration of a general control unit together with other configurations of an inspection apparatus according to an embodiment. [Diagram 3] FIG. 2 is a schematic diagram showing an example of a configuration of a template according to the embodiment. [Figure 4] 3A to 3C are explanatory diagrams illustrating examples of how a template is inspected by the inspection device according to the embodiment. [Diagram 5] 3A to 3C are explanatory diagrams illustrating examples of how a template is inspected by the inspection device according to the embodiment. [Figure 6] 3A to 3C are explanatory diagrams illustrating examples of how a template is inspected by the inspection device according to the embodiment. [Figure 7] 3A to 3C are explanatory diagrams illustrating examples of how a template is inspected by the inspection device according to the embodiment. [Figure 8] 3A to 3C are explanatory diagrams illustrating examples of how a template is inspected by the inspection device according to the embodiment. [Figure 9] 3A to 3C are explanatory diagrams illustrating examples of how a template is inspected by the inspection device according to the embodiment. [Figure 10] 1A to 1C are cross-sectional views illustrating a part of a procedure of a method for manufacturing a master template according to an embodiment. [Figure 11] 1A to 1C are cross-sectional views illustrating a part of a procedure of a method for manufacturing a template according to an embodiment. [Figure 12] 1A to 1C are cross-sectional views illustrating a part of a procedure of a method for manufacturing a template according to an embodiment. [Figure 13] 1A to 1C are cross-sectional views illustrating a part of a procedure of a method for manufacturing a template according to an embodiment. [Figure 14] 1A to 1C are cross-sectional views sequentially illustrating a part of a procedure of an imprint process using a template according to an embodiment. [Figure 15] 1A to 1C are cross-sectional views sequentially illustrating a part of a procedure of an imprint process using a template according to an embodiment. [Figure 16] 1A to 1C are cross-sectional views sequentially illustrating a part of a procedure of an imprint process using a template according to an embodiment. [Figure 17] 1 is a cross-sectional view showing an example of a configuration of a semiconductor device according to an embodiment; [Figure 18] FIG. 4 is a flow diagram showing an example of a procedure of an inspection method using the inspection device according to the embodiment. [Figure 19] FIG. 13 is a schematic diagram showing an example of a configuration of a template according to a modified example of the embodiment. [Figure 20] FIG. 11 is an explanatory diagram illustrating a state in which a template according to a modified example of the embodiment is inspected by an inspection device. [Figure 21] 10A to 10C are cross-sectional views illustrating a part of a procedure of a method for manufacturing a template according to a modified example of the embodiment. [Figure 22] 10A to 10C are cross-sectional views sequentially illustrating a part of a procedure of an imprint process using a template according to a modified example of the embodiment. [Figure 23] 10A to 10C are cross-sectional views sequentially illustrating a part of a procedure of an imprint process using a template according to a modified example of the embodiment. [Figure 24] 10A to 10C are cross-sectional views sequentially illustrating a part of a procedure of an imprint process using a template according to a modified example of the embodiment. [Diagram 25] FIG. 11 is a cross-sectional view showing an example of a configuration of a semiconductor device according to a modified example of the embodiment. [Figure 26]FIG. 13 is a block diagram showing an example of the functional configuration of a general control unit of an inspection apparatus according to another embodiment, together with other configurations of the inspection apparatus. [Figure 27] FIG. 13 is a block diagram showing another example of the functional configuration of the general control unit of an inspection apparatus according to another embodiment, together with another configuration of the inspection apparatus. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The present invention will be described in detail below with reference to the drawings. Note that the present invention is not limited to the following embodiments. In addition, the components in the following embodiments include those that a person skilled in the art can easily imagine or that are substantially the same.

[0009] [Embodiment] Hereinafter, the embodiments will be described in detail with reference to the drawings.

[0010] (Example of inspection device configuration) FIG. 1 is a schematic diagram showing an example of the configuration of an inspection device 1 according to an embodiment.

[0011] The inspection device 1 of the embodiment is configured as an optical inspection device that performs defect inspection of a sample such as a template TM having multiple patterns with different heights from a reference surface. The optical inspection device irradiates light onto the sample and detects defects and foreign matter of the sample from the reflected light.

[0012] The template TM is used, for example, in an imprint process for manufacturing a semiconductor device. In the imprint process, the pattern of the template TM is transferred onto a resist film or the like on a film to be processed, and is used to process the film to be processed.

[0013] As shown in FIG. 1, the inspection device 1 includes an inspection mechanism 10, a general control unit 20, an imaging control unit 21, a light source control unit 22, a stage control unit 23, a storage device 31, a display device 32, and an input device 33.

[0014] The inspection mechanism 10 is a physical and mechanical component of the inspection device 1, and includes an imaging unit 11, a light source 12, a stage 13, an illumination lens 14t, an imaging lens 14m, an objective lens 14j, a beam splitter 15, and a drive mechanism 16.

[0015] The stage 13 is configured so that a template TM, which is a sample to be inspected, can be placed on it. The driving mechanism 16 drives the stage 13 vertically, horizontally, and up and down under the control of the stage control unit 23. This changes the relative position of the template TM placed on the stage 13 with respect to the objective lens 14j.

[0016] The light source 12 is an argon ion laser oscillator or a mercury lamp, and irradiates light such as deep ultraviolet (DUV) light onto the template TM placed on the stage 13. A high-voltage power supply circuit (not shown) is connected to the light source 12. When a voltage is applied from the high-voltage power supply circuit, the light source 12 generates and irradiates light of a desired wavelength.

[0017] Light from the light source 12 passes through the illumination lens 14t and reaches the beam splitter 15. The beam splitter 15 has a reflective surface that is inclined at approximately 45° with respect to the illumination lens 14t. The reflective surface of the beam splitter 15 reflects light polarized in a specific direction and transmits light polarized in other directions.

[0018] As a result, the light emitted from the illumination lens 14t is reflected in the direction of the template TM on the stage 13. In addition, the light reflected from the template TM and returning to the beam splitter 15 is transmitted in the direction of the imaging unit 11.

[0019] The objective lens 14j is disposed on the template TM side on the stage 13, and focuses the light reflected by the beam splitter 15 on the observation surface of the template TM. The imaging lens 14m forms an image on the imaging unit 11 of the light reflected from the template TM and transmitted through the beam splitter 15.

[0020] The imaging unit 11 is, for example, a camera using a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor. The imaging unit 11 captures an image of the light from the template TM focused by the objective lens 14j. The image captured by the imaging unit 11 is transmitted to the general control unit 20 and stored in the storage device 31.

[0021] The overall control unit 20 is connected to the imaging control unit 21, the light source control unit 22, and the stage control unit 23, and generates and sends various control signals to these units. As a result, the overall control unit 20 controls the inspection mechanism 10 via the imaging control unit 21, the light source control unit 22, and the stage control unit 23, and also manages and controls the inspection apparatus 1 as a whole.

[0022] The imaging control unit 21 generates a control signal for operating the imaging unit 11 based on a command from the overall control unit 20, and causes the imaging unit 11 to capture an image including a predetermined range of the observation surface of the template TM. The light source control unit 22 generates a control signal for applying a voltage from a high-voltage power supply circuit (not shown) to the light source 12 based on a command from the overall control unit 20, and causes the light source 12 to emit light. The stage control unit 23 generates a control signal for driving the drive mechanism 16 based on a command from the overall control unit 20, and causes the stage 13 to be driven.

[0023] The storage device 31 is, for example, a hard disk drive (HDD) or a solid state drive (SSD), and functions as an auxiliary storage device for the general control unit 20. The storage device 31 stores, for example, an image captured by the imaging unit 11, pattern information of a template TM that is an object to be inspected, various inspection conditions, a threshold value for defect judgment, and the like.

[0024] The display device 32 is a monitor such as a liquid crystal display (LCD) or an organic EL (Electro-Luminescence) display, and displays, for example, the image captured by the imaging unit 11, pattern information of the template TM, various inspection conditions, and thresholds for defect judgment.

[0025] The input device 33 is an interface such as a keyboard, a mouse, or the like that enables a user of the inspection device 1 to input instructions to the general control unit 20. Through the input device 33, the user can input instructions to the inspection device 1, various inspection conditions, threshold values ​​for defect judgment, and the like.

[0026] (Example of the configuration of the general control unit) Next, a configuration example of the overall control unit 20 included in the inspection device 1 of the embodiment will be described with reference to Fig. 2. Fig. 2 is a block diagram showing an example of the functional configuration of the overall control unit 20 together with other configurations of the inspection device 1 according to the embodiment.

[0027] The overall control unit 20 of the embodiment is configured as a computer including, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU of the overall control unit 20 loads a control program stored in the ROM or the like into the RAM and executes it, thereby realizing the following functional units.

[0028] As shown in FIG. 2, the overall control unit 20 includes, as functional units, an inspection unit 201, an image management unit 202, a display control unit 203, an input reception unit 204, a design data acquisition unit 205, a focus determination unit 206, an image synthesis unit 207, and a defect determination unit 208.

[0029] The inspection unit 201 sends various control signals to, for example, the imaging control unit 21, light source control unit 22, and stage control unit 23 described above, and controls the inspection mechanism 10 via these to generate images required for defect inspection of the template TM.

[0030] At this time, the inspection unit 201 controls each part of the inspection mechanism 10 based on, for example, various inspection conditions input by a user and design data acquired by the design data acquisition unit 205 from the design device 50. As described later, the design data includes pattern information of the template TM, which is the object to be inspected. For example, as described above, the template TM has multiple patterns with different heights from the reference surface. For this reason, the inspection unit 201 causes the imaging unit 11 to capture multiple images while sequentially changing the focal position in the height direction based on, for example, the design data.

[0031] The inspection unit 201 acquires a plurality of images captured as described above from the imaging unit 11. In this manner, the inspection unit 201 functions as an image acquisition unit that acquires a plurality of images from the imaging unit 11, for example.

[0032] The image management unit 202 manages a plurality of images captured by the imaging unit 11, corrected images obtained by correcting these images by an image synthesis unit 207 described below, and a composite image obtained by synthesizing these corrected images by the image synthesis unit 207. Specifically, the image management unit 202 stores the plurality of images, the corrected image, the composite image, etc. in the storage device 31. The image management unit 202 also reads out the plurality of images, the corrected image, the composite image, etc. from the storage device 31.

[0033] The display control unit 203 controls various displays on the display device 32. Specifically, the display control unit 203 causes the display device 32 to display a plurality of images, a corrected image, a composite image, and the like, in accordance with, for example, an instruction from a user. In addition, the display control unit 203 causes the display device 32 to display pattern information of the template TM acquired from the design device 50, as well as various inspection conditions and defect judgment thresholds and the like inputted from the input device 33.

[0034] The input receiving unit 204 receives instructions to the inspection device 1, various inspection conditions, threshold values ​​for defect judgment, and the like, input from the input device 33.

[0035] The design data acquisition unit 205 acquires design data of the template TM from the design device 50. The design device 50 is a computer-aided design (CAD) device or the like capable of designing the template TM, and holds design data of the template TM that has been generated up to now. The design data of the template TM includes pattern information relating to, for example, the heights of multiple patterns formed on the template TM from a reference surface, and the arrangement of multiple patterns on the reference surface.

[0036] The focus determination unit 206 determines multiple focus positions in the height direction of multiple patterns based on pattern height information included in the design data. When the image of the template TM is captured by the imaging unit 11, multiple images are captured with the imaging unit 11 focused at each focus position.

[0037] The image synthesis unit 207 synthesizes a plurality of images to generate a synthetic image. When generating the synthetic image, the image synthesis unit 207 first corrects the brightness, magnification, and deviations in the vertical, horizontal, and rotational directions of the imaging position of the images captured by the imaging unit 11. Then, the image synthesis unit 207 synthesizes the plurality of corrected images to generate a synthetic image. Detailed functions of the image synthesis unit 207 will be described later.

[0038] The defect determination unit 208 determines whether or not a defect is included in the composite image based on a defect determination threshold value input by the user.

[0039] The functional configuration of the overall control unit 20 shown in FIG. 2 is merely an example, and the overall control unit 20 may have a functional configuration different from that described above.

[0040] For example, although the overall control unit 20 is described as acquiring design data of the template TM from the design device 50, the user may be able to input the design data or pattern information of the template TM from the input device 33. Furthermore, at least one of the storage device 31, the display device 32, and the input device 33 may be built into the overall control unit 20 configured as a computer.

[0041] In addition, as described above, the functions of the overall control unit 20 may be realized by a general-purpose computer executing a control program, or some or all of the functions of the overall control unit 20 may be realized by an application specific integrated circuit (ASIC: Application Specific Integrated circuit).

[0042] (Example of inspection equipment functions) Next, a detailed functional example of the inspection device 1 of the embodiment will be described with reference to Fig. 3 to Fig. 9. First, a detailed configuration example of the template TM to be inspected by the inspection device 1 will be described below.

[0043] Fig. 3 is a schematic diagram showing an example of the configuration of a template TM according to an embodiment. Fig. 3(a) is a perspective view of the template TM in a reference surface RP, Fig. 3(b) is a top view of the reference surface RP, and Fig. 3(c) is a cross-sectional view showing the overall configuration of the template TM.

[0044] As shown in Fig. 3(c), the template TM of the embodiment includes a transparent substrate BA made of, for example, quartz. The transparent substrate BA includes a mesa portion MS that protrudes from one surface of the transparent substrate BA, that is, the front surface side, and has a reference surface RP. A countersunk portion CN is formed on the rear surface side of the transparent substrate BA. As a result, the center of the rear surface of the transparent substrate BA is recessed.

[0045] A plurality of columnar patterns CL (CLa, CLb, CLc, etc.) of different heights protrude from the reference plane RP of the mesa portion MS. These columnar patterns CL are, for example, rectangular columns of different heights that occupy approximately the same area on the reference plane RP. The number of these columnar patterns CL is, for example, several tens to several hundred.

[0046] 3(a) and (b) show some of the above-mentioned multiple columnar patterns CL. As shown in Fig. 3(a) and (b), among the multiple columnar patterns CL, the columnar patterns CLa to CLd are arranged in a line so that the height from the reference plane RP increases sequentially, for example, in one direction. In these columnar patterns CLa to CLd, the difference in height between adjacent columnar patterns CL is, for example, about several nm to several tens of nm.

[0047] In a direction intersecting the arrangement of the columnar patterns CLa to CLd, columnar patterns CLe to CLh, whose height from the reference plane RP similarly increases, are arranged in a row adjacent to these columnar patterns CLa to CLd. The lowest columnar pattern CLe among the columnar patterns CLe to CLh protrudes higher from the reference plane RP than the highest columnar pattern CLd among the columnar patterns CLa to CLd. The difference in height between the columnar patterns CLd and CLe is, for example, several nm to several tens of nm.

[0048] In this way, on the reference surface RP of the template TM, multiple rows of columnar patterns CLa-CLd, CLe-CLh, CLi-CLl, CLm-CLp, etc., whose height sequentially increases in one direction, are arranged in a direction intersecting their arrangement direction.

[0049] However, the arrangement order and arrangement positions of the multiple columnar patterns CL shown in Figures 3(a) and (b) are merely examples, and the multiple columnar patterns CL of the template TM may have an arrangement order or arrangement different from those described above.

[0050] For example, an example of inspecting a template TM having such a plurality of columnar patterns CL by the inspection device 1 of the embodiment is shown in Fig. 4 to Fig. 9. Fig. 4 to Fig. 9 are explanatory diagrams sequentially illustrating the state of inspection of the template TM by the inspection device 1 according to the embodiment.

[0051] As shown in FIG. 4, the 16 columnar patterns CLa to CLp shown in FIG. 3(b) are assumed to fall within the range imaged by the imaging unit 11 in one shot, that is, within the frame FM of the imaging unit 11.

[0052] Here, in an optical defect inspection device such as the inspection device 1, the focal depth of light used for inspection is about 50 nm to 200 nm, for example, about 50 nm. That is, in the case of this focal depth, the height that can be focused in one imaging is within a range of, for example, 50 nm to 200 nm. For this reason, it may be difficult to focus on all of the columnar patterns CLa to CLp that fit within one image.

[0053] Therefore, the inspection device 1 captures images of the area including these columnar patterns CLa to CLp multiple times while changing the focal position in the height direction.

[0054] More specifically, when inspecting defects in the template TM, the focus determination unit 206 of the overall control unit 20 that controls the inspection apparatus 1 determines multiple focal positions in the height direction at which to focus the imaging unit 11, based on the height information contained in the design data acquired by the design data acquisition unit 205.

[0055] At this time, the focus determination unit 206 calculates the number of focus positions required to focus on the upper ends of the multiple columnar patterns CL. The required number of focus positions, that is, the number of times (the number of steps) to change the focus position in imaging the template TM, can be calculated, for example, from the focal depth of the light used during the inspection and the highest and lowest columnar patterns CL among the multiple columnar patterns CL.

[0056] By capturing multiple images while sequentially focusing at multiple focal positions in the height direction determined in this manner, all of the multiple columnar patterns CL are captured in focus in one of the multiple images.

[0057] In addition, when the design data is CAD data, etc., the height information may be indicated by the number of hierarchical levels (number of layers) of the multiple columnar patterns CL from the reference plane RP, etc. In this case, the focus determination unit 206 may calculate the height position of each of the multiple columnar patterns CL from the thickness of one level.

[0058] The inspection unit 201 sends a control signal for driving the driving mechanism 16 to a stage control unit 23 included in the inspection mechanism 10 based on information on a plurality of focal positions determined from the design data. The stage control unit 23 controls the driving mechanism 16 in accordance with a command from the inspection unit 201 to move the stage 13 up and down. This adjusts the focal position of the light incident on the template TM.

[0059] Furthermore, the inspection unit 201 sends a control signal to the stage control unit 23, and also sends a control signal to operate the imaging unit 11 to the imaging control unit 21 included in the inspection mechanism 10. The imaging control unit 21 operates the imaging unit 11 in accordance with the up and down movement of the stage 13 by the stage control unit 23 in accordance with a command from the inspection unit 201, and causes the imaging unit 11 to capture a plurality of images IM0 to IM8. As a result, a plurality of images IM0 to IM8 in focus at each of a plurality of focal positions are acquired.

[0060] Here, among the multiple images IM0 to IM8, image IM0 is an image captured with the focus adjusted to the vicinity of the height position of the reference plane RP. Therefore, none of the multiple columnar patterns CLa to CLp included in image IM0 is in focus. However, the arrangement positions of these columnar patterns CLa to CLp can be ascertained from image IM0.

[0061] Moreover, the image IM1 is an image captured by focusing on the vicinity of the height position of the upper ends of the columnar patterns CLa and CLb among the multiple columnar patterns CLa to CLp. That is, in the image IM1, the focus is on the columnar patterns CLa and CLb among the multiple columnar patterns CLa to CLp included therein.

[0062] Strictly speaking, the height positions at which the columnar patterns CLa and CLb are in focus are different, but if the difference in height between these columnar patterns CLa and CLb is within the specs of the focal depth of the light used for inspection, it can be considered that the columnar patterns CLa and CLb are in focus.

[0063] In other words, a state where a certain columnar pattern CL is in focus means that the focus is in focus to an extent that sufficient accuracy can be obtained for, for example, defect inspection. The sensitivity of an image that can obtain the accuracy required for inspection can be specified, for example, by the amount of change in contrast at the boundary portion of the columnar pattern CL in the image.

[0064] As described above, the focus determination unit 206 specifies the number of columnar patterns CL that can be focused in one imaging based on, for example, the performance of the imaging unit 11 and the focal depth of the light used in the inspection, and determines the number of focal positions required for the inspection. Therefore, the number of focused columnar patterns CL included in one image can vary depending on the performance of the imaging unit 11 and the focal depth of the light used in the inspection, regardless of the example in FIG. 4.

[0065] Like image IM1, images IM2 to IM8 are images captured by focusing on the vicinity of the height positions of the upper ends of columnar patterns CLc, CLd, columnar patterns CLe, CLf, columnar patterns CLg, CLh, columnar patterns CLi, CLj, columnar patterns CLk, CLl, and columnar patterns CLo, CLp among the multiple columnar patterns CLa to CLp.

[0066] As a result, all of the multiple columnar patterns CLa to CLp contained in one image are captured in focus in one of the images IM1 to IM8.

[0067] As shown in Fig. 5, the overall control unit 20 of the inspection device 1 synthesizes these images IM0 to IM8. At this time, the overall control unit 20 uses the image IM0, which is not focused on any of the columnar patterns CL, as a reference image and applies a part of each of the images IM1 to IM8 to it. More detailed explanatory diagrams are shown in Figs. 6 to 9.

[0068] 6, the image synthesis unit 207 of the overall control unit 20 corrects the brightness, magnification, and shifts in the vertical, horizontal, and rotational directions of the imaging position in the image IM1 as necessary. For example, changes in brightness between the images IM1 to IM8 may occur over time. The imaging position may shift due to, for example, vibration of the stage 13. The image synthesis unit 207 corrects the brightness, magnification, and shifts in the imaging position before synthesizing the images IM1 to IM8.

[0069] In the example of Fig. 6, it is assumed that the image IM1 has a misalignment in the imaging position in the rotation direction. Such a misalignment in the imaging position can be determined based on, for example, design data. The image synthesis unit 207 corrects the image IM1 by rotating it in the direction opposite to the misalignment.

[0070] Furthermore, the image synthesis unit 207 extracts an area including a columnar pattern CL focused on its upper end from among multiple columnar patterns CLa to CLp included in the corrected image IM1. The image IM1 is an image captured by focusing on the upper ends of the columnar patterns CLa and CLb. Therefore, the image synthesis unit 207 extracts an area including the columnar patterns CLa and CLb from the image IM1.

[0071] Which area in the image IM1 should be extracted can be determined based on, for example, the design data of the template TM. The design data includes, for example, the coordinates of the multiple columnar patterns CLa to CLp on the reference plane RP and height information associated with those coordinates. For this reason, the image synthesis unit 207 refers to which focal position in the height direction the image IM1 was captured at, and collates the height information corresponding to that focal position with the coordinates on the reference plane RP associated with the focal position to identify the area including the columnar patterns CLa and CLb to be extracted.

[0072] The image synthesis unit 207 fits the area including the columnar patterns CLa, CLb extracted from the image IM1 to the image IM0 which is the reference image. As described above, all the columnar patterns CLa to CLp are out of focus in the image IM0. However, since the arrangement positions of the individual columnar patterns CLa to CLp can be confirmed on the image IM0, it is possible to fit the area extracted from the image IM1 to the arrangement positions of the columnar patterns CLa, CLb on the image IM0.

[0073] As shown in Fig. 7, the image synthesis unit 207 corrects the brightness, magnification, and shifts in the vertical and horizontal directions and rotational direction of the imaging position in the image IM2. In the example of Fig. 7, it is assumed that the imaging position of the image IM2 has shifted in the vertical and horizontal directions. The image synthesis unit 207 determines such a shift in the imaging position based on, for example, design data, and corrects it by moving the image IM2 in the direction opposite to the direction of the position shift.

[0074] Furthermore, the image synthesis unit 207 extracts an area including columnar patterns CLc and CLd whose upper ends are in focus from among the multiple columnar patterns CLa to CLp included in the corrected image IM2 based on the focal position when the image IM2 was captured and the coordinates associated with the height information corresponding to the focal position. The image synthesis unit 207 fits the area extracted from the image IM2 to the arrangement positions of the columnar patterns CLc and CLd on the image IM0.

[0075] As shown in Fig. 8, the image synthesis unit 207 corrects the brightness, magnification, imaging position deviation, etc., of the image IM3. In the example of Fig. 8, it is assumed that the imaging position deviation occurs in the rotation direction of the image IM3. The image synthesis unit 207 determines such imaging position deviation based on, for example, design data, and corrects it by rotating the image IM3 in the direction opposite to the position deviation.

[0076] Furthermore, the image synthesis unit 207 extracts an area including columnar patterns CLe and CLf whose upper ends are in focus from among the multiple columnar patterns CLa to CLp included in the corrected image IM3 based on the focal position when the image IM3 was captured and the coordinates associated with the height information corresponding to the focal position. The image synthesis unit 207 fits the area extracted from the image IM3 to the arrangement positions of the columnar patterns CLe and CLf on the image IM0.

[0077] The image synthesis unit 207 performs the same process on the images IM4 to IM7. That is, it corrects the brightness, magnification, and imaging position shift in the images IM4 to IM7, extracts areas including the focused columnar patterns CL from the images IM4 to IM7, and fits them to the corresponding positions in the image IM0.

[0078] As shown in Fig. 9, the image synthesis unit 207 corrects the brightness, magnification, imaging position deviation, etc. of the image IM8. In the example of Fig. 9, it is assumed that no imaging position deviation occurs in the image IM8. The image synthesis unit 207 determines whether or not there is a deviation in the imaging position of the image IM8 based on, for example, design data, and if there is no position deviation, only other corrections such as brightness and magnification are made.

[0079] Furthermore, the image synthesis unit 207 extracts an area including columnar patterns CLo and CLp whose upper ends are in focus from among the multiple columnar patterns CLa to CLp included in the corrected image IM8 based on the focal position when the image IM8 was captured and the coordinates associated with the height information corresponding to the focal position. The image synthesis unit 207 fits the area extracted from the image IM8 to the arrangement positions of the columnar patterns CLo and CLp on the image IM0.

[0080] 6 to 9, a composite image in which all of the columnar patterns CLa to CLp are in focus is generated. When the images IM1 to IM8 are combined on the image IM0, the luminance, magnification, and imaging position shift of each of the images IM1 to IM8 are corrected as described above, so that differences in luminance and position shifts at the boundaries between the images IM1 to IM8 are suppressed.

[0081] In addition, in Figures 6 to 9, the multiple columnar patterns CLa to CLp are fitted to the image IM0, which is the reference image, in order from the lowest to the highest. However, the order in which the images IM1 to IM8 are fitted is not limited to the above example and may be arbitrary.

[0082] The defect determination unit 208 uses the generated composite image to determine the presence or absence of defects in the plurality of columnar patterns CLa to CLp.

[0083] At this time, the defect determination unit 208 determines whether or not there is a formation defect of any of the columnar patterns CL in the template TM, a foreign substance on the template TM, or other defects by, for example, comparing adjacent columnar patterns CL among the multiple columnar patterns CLa to CLp with each other, or comparing one columnar pattern CL with multiple columnar patterns CL around it.

[0084] This method of performing defect inspection by comparing multiple patterns within a single image is sometimes called cell-to-cell inspection.

[0085] (Template manufacturing method) The above-described defect inspection of the template TM by the inspection apparatus 1 of the embodiment is performed, for example, as part of a manufacturing process of the template TM in order to check the quality of the template TM in which a plurality of columnar patterns CL are formed. Hereinafter, the manufacturing method of the template TM to be inspected for defects and the master template TMm used in manufacturing the template TM will be described with reference to Figs. 10 to 13.

[0086] As an example, when manufacturing the template TM, first, a master template TMm that serves as an original version of the template TM is manufactured. A plurality of templates TM can be manufactured from one master template TMm.

[0087] 10A to 10C are cross-sectional views illustrating a part of a procedure of the method for manufacturing the master template TMm according to the embodiment, and show an enlarged cross-sectional view of a mesa portion MSm of the master template TMm in the middle of being manufactured.

[0088] 10(a), a mesa portion MSm protruding from the surface of a transparent substrate of a master template TMm is formed, the upper surface of the mesa portion MSm is covered with a mask film such as a chrome film, and a mask pattern 71p having a plurality of hole patterns 71h is formed. At this time, the upper surface of the transparent substrate excluding the mesa portion MSm may be covered with a mask film such as a chrome film (not shown).

[0089] The mesa portion MSm of the transparent substrate is formed, for example, by grinding the transparent substrate by mechanical processing. The hole patterns 71h are formed, for example, by processing a mask film by an electron drawing technique using an electron beam or the like.

[0090] 10(b), a resist pattern 81p that covers a part of the mask pattern 71p is formed on the upper surface of the mesa portion MSm. The resist pattern 81p is formed by applying a resist film, such as a photosensitive organic film, onto a transparent substrate and exposing a part of it to light.

[0091] Furthermore, the mesa portion MSm is processed through the mask pattern 71p exposed from the resist pattern 81p, to form a hole pattern HLk that reaches a predetermined depth of the mesa portion MSm.

[0092] 10(c), the resist pattern 81p is slimmed by oxygen plasma etc. As a result, the end of the resist pattern 81p on the mask pattern 71p is recessed, and the mask pattern 71p is further exposed.

[0093] Furthermore, the mesa portion MSm is processed through the mask pattern 71p exposed from the resist pattern 81p to form a hole pattern HLj that reaches a predetermined depth of the mesa portion MSm. At this time, the already formed hole pattern HLk is processed deeper. As a result, hole patterns HLj and HLk with different reaching depths in the mesa portion MRs are formed.

[0094] As shown in FIG. 10(d), the resist pattern 81p is slimmed by oxygen plasma or the like to further recess the ends of the resist pattern 81p and further expose the mask pattern 71p.

[0095] Furthermore, the mesa portion MSm is processed through the mask pattern 71p exposed from the resist pattern 81p to form a hole pattern HLi reaching a predetermined depth of the mesa portion MSm. At this time, the already formed hole patterns HLj and HLk are processed deeper to form hole patterns HLi, HLj, and HLk reaching successively deeper depths in the mesa portion MSm.

[0096] 10(e), the slimming of the resist pattern 81p and the processing of the mesa portion MSm are repeated to form a plurality of hole patterns HLa-HLk whose penetration depths in the mesa portion MSm gradually increase. In this way, the master template TMm is manufactured. After that, the remaining resist pattern 81p and mask pattern 71p are removed.

[0097] In FIG. 10, for ease of explanation, hole patterns HLa to HLk of increasing depth are shown in one cross section, but the number and arrangement of hole patterns HL formed in the master template TMm can be determined arbitrarily depending on the number and arrangement of columnar patterns CL formed in the template TM.

[0098] The master template TMm thus manufactured is used to perform the imprint process described below, thereby manufacturing the template TM of the embodiment.

[0099] 11 to 13 are cross-sectional views sequentially illustrating a part of the procedure of the method for manufacturing the template TM according to the embodiment. 11 to 13 show enlarged cross-sectional views of a mesa portion MS of the template TM in the middle of its manufacture.

[0100] 11(a), a mesa portion MS protruding from the surface of a transparent substrate BA (see FIG. 3(c)) of a template TM is formed, and the upper surface of the mesa portion MS is covered with a resist film 82. At this time, the upper surface of the transparent substrate BA excluding the mesa portion MS may be covered with a mask film such as a chromium film (not shown).

[0101] The mesa portion MS of the transparent substrate BA is formed, for example, by grinding the transparent substrate BA by mechanical processing, as in the case of the above-mentioned master template TMm. The resist film 82 is, for example, a photocurable resin film that is cured by irradiation with ultraviolet light or the like, and is formed by applying a resist material by spin coating or the like, or by dropping a resist material by an inkjet method or the like. At this point, the resist film 82 is in an uncured state.

[0102] In order to transfer the hole patterns HLa to HLk of the master template TMm to this resist film 82, the master template TMm is opposed to the resist film 82 with the surface on which the hole patterns HLa to HLk are formed facing the template TM side.

[0103] 11(b), the hole patterns HLa to HLk of the master template TMm are pressed against the resist film 82 on the mesa portion MS. At this time, a small gap is provided between the mesa portions MSm, MS so that the mesa portion MSm of the master template TMm does not come into contact with the mesa portion MS of the template TM.

[0104] As a result, the hole patterns HLa to HLk of the master template TMm are filled with a part of the resist film 82. In this state, when the resist film 82 is irradiated with light such as ultraviolet light that has been transmitted through the master template TMm while the master template TMm is pressed against the resist film 82, the resist film 82 is cured.

[0105] 12(a), when the master template TMm is released, a resist pattern 82p to which the hole patterns HLa to HLk of the master template TMm are transferred is formed. As described above, since the resist film 82 is cured with a gap provided between the mesa portion MSm of the master template TMm and the mesa portion MS of the template TM, the resist pattern 82p has a resist residual film 82r that connects the bottom of each transferred pattern.

[0106] 12(b), the remaining resist film 82r at the bottom of each pattern is removed using oxygen plasma or the like. The mesa portion MS is processed through the resist pattern 82p. As a result, the film thickness of the resist pattern 82p is reduced, and the upper surface of the mesa portion MS exposed from the resist pattern 82p is removed, forming a plurality of columnar patterns CLa-CLk to which the resist pattern 82p is transferred.

[0107] When the processing of the mesa portion MS through the resist pattern 82p is further continued, the resist pattern 82p having the thinnest film thickness on the columnar pattern CLa disappears.

[0108] As shown in FIG. 12(c), processing of the mesa portion MS through the resist pattern 82p is further continued. As a result, the upper surface of the mesa portion MS exposed from the resist pattern 82p is further removed, and the amount of protrusion of the plurality of columnar patterns CLb-CLk from the upper surface of the mesa portion MS relatively increases. Also, the resist pattern 82p on the columnar pattern CLb disappears.

[0109] On the other hand, in the columnar pattern CLa exposed when the resist pattern 82p has disappeared, the upper end portion is removed and the amount of protrusion from the upper surface of the mesa portion MS becomes smaller than those of the other columnar patterns CLb to CLk.

[0110] 13(a), the processing of the mesa portion MS through the resist pattern 82p is further continued. As a result, the upper surface of the mesa portion MS exposed from the resist pattern 82p is further removed, and the amount of protrusion of the plurality of columnar patterns CLc to CLk from the upper surface of the mesa portion MS relatively increases. Also, the resist pattern 82p on the columnar pattern CLc disappears.

[0111] On the other hand, in the columnar pattern CLb exposed after the resist pattern 82p is removed, the upper end portion is removed, so that the amount of protrusion from the upper surface of the mesa portion MS is smaller than that of the other columnar patterns CLc to CLk. Moreover, in the columnar pattern CLa, the upper end portion is further removed, so that the amount of protrusion from the upper surface of the mesa portion MS is smaller than that of the columnar pattern CLb.

[0112] 13(b), processing of the mesa portion MS is further continued through the resist pattern 82p. As a result, the amount of protrusion of the multiple columnar patterns CL from the upper surface of the mesa portion MS relatively increases, and the resist patterns 82p disappear in the order of thinnest film thickness, so that some more of the multiple columnar patterns CL are exposed.

[0113] 13(c), by continuing the above-mentioned processing, a plurality of columnar patterns CLa-CLk are formed, each of which has a gradually increasing protrusion amount from the top surface of the mesa portion MS, from the columnar pattern CLa to the columnar pattern CLk. The surface of the mesa portion MS exposed at this time corresponds to the above-mentioned reference plane RP.

[0114] Here, in Figures 11 to 13, for ease of explanation, columnar patterns CLa to CLk of increasing height are shown in one cross section, but the number and arrangement of columnar patterns CL formed in the template TM are arbitrary, and the template TM may have, for example, the configuration of Figure 3 described above, or some other configuration.

[0115] Thereafter, the completed columnar patterns CL are subjected to a defect inspection by the inspection device 1 of the embodiment using the inspection method shown in the above-mentioned Figs. 4 to 9. If a defect is detected in any of the columnar patterns CL in the defect inspection, the template TM is determined to be defective and is discarded or sent for rework. If no defect is detected in the defect inspection, the template TM is determined to be a non-defective product and is used in the manufacture of a semiconductor device, which will be described later.

[0116] In this manner, the template TM of the embodiment is manufactured.

[0117] The above-described method for manufacturing the template TM is merely an example, and the template TM of the embodiment may be manufactured by a method other than the above. For example, the template TM may be manufactured without using the master template TMm, without following the above-described example.

[0118] In this case, for example, the plurality of columnar patterns CL may be directly written on the upper surface of the mesa portion MS of the transparent substrate BA by an electron beam or the like. Alternatively, the plurality of columnar patterns CL may be formed by etching using a mask pattern using a chromium film or the like and a resist pattern using a resist film or the like.

[0119] (Example of using templates) Next, an example of use of the template TM according to the embodiment will be described with reference to Figures 14 to 16. As described above, the template TM is used, for example, when performing an imprint process in a manufacturing process of a semiconductor device. Therefore, the processes shown in Figures 14 to 16 described below are performed, for example, as part of a manufacturing method of a semiconductor device.

[0120] 14 to 16 are cross-sectional views sequentially illustrating a part of the procedure of the imprint process using the template TM according to the embodiment.

[0121] 14(a), a processed film PF is formed on a base film UF as an object of the imprint process. The base film UF may be a part of a silicon substrate, or may be an insulating film such as a silicon oxide film formed on a silicon substrate. The processed film PF may be a multilayer film in which insulating layers such as silicon oxide layers and insulating layers such as silicon nitride layers are alternately stacked.

[0122] A resist film 83 is further formed on the processed film PF. Like the above-mentioned resist film 82, the resist film 83 is, for example, a photocurable resin before hardening, and is formed by coating or dropping a resist material.

[0123] In order to transfer the plurality of columnar patterns CL of the template TM to this resist film 83, the template TM is opposed to the resist film 83 with the surface on which the columnar patterns CL are formed facing the processed film PF.

[0124] 14(b), the columnar pattern CL of the template TM is pressed against the resist film 83 on the processing target film PF. At this time, a small gap is provided between the columnar pattern CLk having the largest protrusion amount and the processing target film PF so that the mesa portion MS of the template TM does not come into contact with the processing target film PF.

[0125] In this state, while the template TM is pressed against the resist film 83, the resist film 83 is irradiated with light such as ultraviolet light that has been transmitted through the template TM, whereby the resist film 83 is cured.

[0126] 15(a), when the template TM is released, a resist pattern 83p to which the columnar pattern CL of the template TM is transferred is formed. As described above, since the resist film 83 is cured with a gap between the template TM and the processed film PF, the resist pattern 83p has a resist residual film 83r at the bottom of the deepest hole pattern among the transferred patterns.

[0127] Here, in the photolithography technique, it is difficult to simultaneously form a resist pattern having a plurality of patterns with different depths in a resist film, like the resist pattern 83p, and therefore, for example, a plurality of exposure and development processes are required.

[0128] As described above, according to the technique using the template TM, a plurality of patterns having different penetration depths in the resist film 83 are formed in the resist film 83 by one imprint process.

[0129] 15(b), the resist residual film 83r at the bottom of the pattern of the deepest hole is removed using oxygen plasma etc. As a result, the upper surface of the processed film PF is exposed at the bottom of the pattern of the deepest hole.

[0130] When the processing target film PF is processed through the resist pattern 83p, the processing target film PF exposed from the resist pattern 83p is removed, and a hole CHk to which the deepest hole resist pattern 83p is transferred is formed. Also, the film thickness of the resist pattern 83p is reduced, and the processing target film PF is newly exposed from the pattern bottom adjacent to the deepest hole pattern.

[0131] As shown in FIG. 16(a), processing of the processing target film PF via the resist pattern 83p is further continued. As a result, the upper surface of the processing target film PF newly exposed from the resist pattern 83p is removed, and a hole CHj is formed. The depth of the processing target film PF of the hole CHk further increases. In addition, the film thickness of the resist pattern 83p decreases, and the processing target film PF is newly exposed from the pattern bottom adjacent to the hole CHj.

[0132] 16(b), processing of the processing target film PF via the resist pattern 83p is further continued. As a result, the depth of the holes CH in the processing target film PF further increases, and the processing target film PF is newly exposed from the bottom of the pattern in order of the depth of the pattern transferred by the template TM, and new holes CH are formed.

[0133] 16(c), by continuing the above-mentioned processing, a plurality of holes CHa to CHk whose penetration depths are successively increased from hole CHa to hole CHk are formed in the processing target film PF. After that, the remaining resist pattern 83p is removed.

[0134] With the above, the imprint process using the template TM is completed.

[0135] In the above imprint process, for example, the angular columnar pattern CL of the template TM may be transferred to a shape having rounded corners when transferred to the resist film 83. In addition, when a plurality of holes CH are formed in the processing target film PF using the resist pattern 83p, the corners of the holes CH may be further processed to have a rounded shape.

[0136] (Example of the configuration of a semiconductor device) Next, an example of application of the above-mentioned hole CH formed using the template TM of the embodiment to a semiconductor device will be described with reference to FIG.

[0137] Fig. 17 is a cross-sectional view showing an example of the configuration of a semiconductor device MDV according to an embodiment. Fig. 17(a) is a cross-sectional view showing a schematic configuration of the semiconductor device MDV according to an embodiment, and Fig. 17(b) is an enlarged cross-sectional view of a pillar PL provided in the semiconductor device MDV. In Fig. 17(a), hatching is omitted to improve visibility of the drawing.

[0138] 17(a), the semiconductor device MDV includes a peripheral circuit CUA, a source line SL, and a stacked body LM in this order on a substrate SB such as a silicon substrate. The peripheral circuit CUA includes transistors TRT and the like formed on the substrate SB, and contributes to the electrical operation of memory cells described below. The peripheral circuit CUA is covered with an insulating film 51 such as a silicon oxide film. On the insulating film 51, a source line SL is formed, which is a conductive polysilicon layer or the like.

[0139] The laminate LM on the source line SL has a configuration in which a plurality of word lines WL are laminated. The word lines WL are, for example, tungsten layers or molybdenum layers. The number of laminated word lines WL is, for example, several tens to several hundred. Although not shown in FIG. 17(a), an insulating layer OL (see FIG. 17(b)), such as a silicon oxide layer, is interposed between each of the plurality of word lines WL.

[0140] The laminate LM includes a memory region MR, a contact region PR, and a through contact region TP, and each region includes a plurality of pillars PL and a plurality of contacts CC, C4. The laminate LM is entirely covered with an insulating film 52 such as a silicon oxide film.

[0141] Each of the pillars PL penetrates the laminate LM and reaches the source line SL. The detailed configuration of the pillar PL is shown in Figure 17(b).

[0142] As shown in Fig. 17(b), the pillar PL includes a memory layer ME and a channel layer CN in this order from the outer periphery of the pillar PL, and a core layer CR is filled further inside the channel layer CN. The memory layer ME has a multilayer structure in which a block insulating layer BK, a charge storage layer CT, and a tunnel insulating layer TN are stacked in this order from the outer periphery of the pillar PL. Note that the memory layer ME is not disposed at the lower end of the pillar PL, and the inner channel layer CN is connected to the source line SL.

[0143] The channel layer CN is a semiconductor layer such as a polysilicon layer or an amorphous silicon layer. The core layer CR, the tunnel insulating layer TN, and the block insulating layer BK are, for example, silicon oxide layers. The charge storage layer CT is, for example, a silicon nitride layer.

[0144] With this configuration, multiple memory cells MC are formed at the intersections of the pillars PL and the word lines WL, aligned in the height direction. By applying a predetermined voltage from the word lines WL to the memory cells MC at the same height, charges can be stored in the charge storage layers CT of the memory cells MC, or charges can be extracted from the charge storage layers CT, to write and read data to and from the memory cells MC. Data read from the memory cells MC is transmitted to a sense amplifier (not shown) via plugs and upper layer wiring above the pillars PL.

[0145] Each of the contacts CC reaches a depth position of one of the word lines WL included in the laminate LM and is connected to the word line WL. Also, each of the contacts CC is connected to the contacts C4 via upper wiring and plugs.

[0146] The contacts C4 penetrate the stack LM and the source line SL, and reach the insulating film 51 below the stack LM. In the insulating film 51, the lower end of each of the contacts C4 is connected to a transistor TRT of the peripheral circuit CUA through a lower layer wiring, a via, a contact, etc.

[0147] With this configuration, a predetermined voltage can be applied from the peripheral circuit CUA to each of the memory cells MC via the contacts C4 and CC, thereby electrically operating the memory cells MC.

[0148] In the semiconductor device MDV having the above configuration, the multiple contacts CC each reaching the word lines WL at different depths in the laminate LM can be formed by using, for example, the above-mentioned template TM.

[0149] As described above, a plurality of columnar patterns CL of the template TM are transferred to a resist film formed on the laminate LM, and the laminate LM is processed through the resist film, thereby forming a plurality of contact holes having different depths in the laminate LM, such as the above-mentioned holes CHa to CHk. Note that at this stage, the laminate LM may have a structure in which a plurality of silicon oxide layers and silicon nitride layers are stacked, such as the above-mentioned processed film PF.

[0150] Then, a replacement process is performed to replace the silicon nitride layer of the laminate LM with word lines WL such as a tungsten layer. In addition, the side walls of the multiple contact holes formed using the template TM are covered with an insulating layer, and the inside of the insulating layer is filled with a conductive layer. This forms multiple contacts CC that are respectively connected to the word lines WL at different depths in the laminate LM.

[0151] As described above, the contact holes formed in the laminate LM through the imprint process using the template TM have, for example, rounded corners. Therefore, when a conductive layer is embedded in the contact holes to function as contacts CC, it is possible to suppress power concentration and the like caused by the contacts CC having acute corners.

[0152] (Inspection method using inspection equipment) Next, an example of a defect inspection method using the inspection apparatus 1 of the embodiment will be described with reference to Fig. 18. Fig. 18 is a flow diagram showing an example of the procedure of the inspection method using the inspection apparatus 1 according to the embodiment. The inspection method of the embodiment is performed, for example, as part of the manufacture of a template TM, a master template TMm, or a semiconductor device MDV. Here, a case where the object to be inspected is a template TM will be described as an example.

[0153] As shown in FIG. 18, the design data acquisition unit 205 of the general control unit 20 that controls the inspection device 1 acquires design data of the template TM from the design device 50 (step S101).

[0154] Based on the design data, the focus determination unit 206 determines, as an imaging area, a predetermined area that fits within one frame of the imaging unit 11 from the entire inspection area of ​​the template TM (step S102). In addition, based on height information of the acquired design data, the focus determination unit 206 determines, within the determined imaging area, a plurality of focus positions required to focus on each of a plurality of columnar patterns CL of the template TM (step S103).

[0155] The inspection unit 201 controls the imaging unit 11 via the imaging control unit 21 to capture an image focused at a predetermined focal position among the determined focal positions. The image management unit 202 stores the image captured by the imaging unit 11 in the storage device 31 (step S104).

[0156] The inspection unit 201 determines whether or not a plurality of images focused at each of a plurality of focus positions have been acquired (step S105). If there is a focus position for which an image has not been acquired (step S105: No), the inspection unit 201 and the image management unit 202 repeat the processes from step S104 onward for the focus position for which an image has not been acquired.

[0157] When images are acquired for all focus positions (step S105: Yes), the image synthesis unit 207 corrects a predetermined image from among the multiple images excluding the image to be the reference image (step S106). The image synthesis unit 207 also specifies an area including a focused columnar pattern CL in the corrected image based on the layout information of the design data, and extracts the area (step S107). The image synthesis unit 207 also applies the extracted area to the corresponding area of ​​the reference image to synthesize them (step S108).

[0158] The image synthesis unit 207 determines whether the synthesis process is completed for all of the images other than the reference image (step S109). If an image remains to be synthesized (step S109: No), the image synthesis unit 207 repeats the process from step S106 onwards for the image to be synthesized.

[0159] When the synthesis process for all images is completed (step S109: Yes), the defect determination unit 208 performs a defect inspection based on the synthesized image in which all images are synthesized (step S110). The defect determination unit 208 also determines whether a defect is detected in the inspected synthesized image (step S111). If a defect is detected (step S111: Yes), the defect determination unit 208 determines that the template TM is defective (step S114) and ends the defect inspection process.

[0160] If no defect is detected (step S111: Yes), the defect determination unit 208 determines whether or not the defect inspection has been completed for the entire inspection target area of ​​the template TM (step S112). If there is an area that has not been inspected (step S112: No), the central control unit 20 repeats the process from step S102 for the uninspected area.

[0161] When the defect inspection of all the inspection target areas is completed without detecting any defect (step S112: Yes), the defect determination unit 208 determines that the template TM is non-defective (step S113).

[0162] With the above, the defect inspection by the inspection device 1 of the embodiment is completed.

[0163] It should be noted that the flow shown in FIG. 18 is merely an example, and the defect inspection may be carried out according to a flow different from the above.

[0164] For example, not limited to the example of Fig. 18, regions extracted from a plurality of images may be combined into a reference image all at once. That is, after in-focus regions are extracted from all of the images, the combining process of step S108 may be performed after the process of step S109. Also, for example, even after a defect is detected in one imaging region, the defect inspection may be continued until the inspection of all regions is completed.

[0165] Furthermore, the defect inspection method by the inspection apparatus 1 may include a process of repairing defects, such as by reworking the template TM in which a defect has been detected.

[0166] (Overview) In the manufacturing process of a semiconductor device, multiple structures having different arrival positions in the stacking direction of the semiconductor device may be formed. In photolithography technology, it is difficult to simultaneously form multiple patterns having different focal depths. For this reason, multiple processes may be performed to form multiple structures having different arrival positions in the stacking direction.

[0167] In such a case, if the imprint process is performed using a template having a plurality of patterns with different heights, the plurality of patterns with different heights can be formed in a single process on the resist film, thereby reducing the number of steps and the cost. However, the defect inspection of the plurality of patterns formed on the template has the following problems.

[0168] In the imprint process, the pattern of the template is transferred at the same magnification, so the height difference between multiple patterns is likely to become large. For example, in an optical inspection device, the focus can only be adjusted within a range of, for example, 50 nm to 200 nm in the height direction in one image capture. This makes it difficult to adjust the focus to all of the different height positions of multiple patterns included in one frame. If an out-of-focus pattern is included in the same image, the accuracy of defect detection will decrease, for example, in cell-to-cell inspection, which compares multiple patterns in one image.

[0169] For example, a confocal microscope can generate an all-in-focus image in which each of multiple patterns at different heights is in focus. In a confocal microscope, a laser is used to perform two-dimensional scanning in the planar direction of the sample to obtain cross-sectional images of microscopic areas in focus for each layer. These cross-sectional images are then combined to obtain an all-in-focus image in focus at all height positions.

[0170] However, confocal microscopes require large-scale mechanisms such as two-dimensional scanning lasers, which increases the cost of inspection. In addition, samples must be scanned two-dimensionally from various directions, which requires calculations based on a huge amount of data, and it takes a long time to generate an all-in-focus image, for example.

[0171] According to the inspection device 1 of the embodiment, a plurality of columnar patterns CLa to CLp are captured from the height direction, and a plurality of focused images IM1 to IM8 are captured at each of a plurality of focus positions, and a region including a focused columnar pattern CL among the plurality of columnar patterns CLa to CLp is extracted from each of the plurality of images IM1 to IM8 to generate a composite image.

[0172] By combining the images IM1 to IM8 in this way, a highly sensitive composite image can be generated. Also, by inspecting the plurality of columnar patterns CLa to CLp for defects from such a composite image, the plurality of columnar patterns CLa to CLp having different heights can be inspected for defects with high accuracy.

[0173] According to the embodiment of the inspection device 1, an image IM0 focused at the height position of the reference plane RP of the template TM is captured by the imaging unit 11, and a composite image is generated by arranging areas extracted from multiple images IM1 to IM8 in the corresponding areas of the image IM0.

[0174] In this way, by fitting areas extracted from multiple images IM1 to IM0 to the base image IM0, in which the positions of the multiple columnar patterns CLa to CLp can be identified, it is possible to position each of the columnar patterns CLa to CLp in a more accurate position, and a composite image can be easily generated.

[0175] According to the inspection apparatus 1 of the embodiment, a plurality of focal positions are determined based on height information regarding the respective heights of a plurality of columnar patterns CL from the reference plane RP, which is included in the design data.

[0176] In this way, by referring to the design data, it is possible to easily determine the heights of multiple columnar patterns CL from the reference plane RP and determine multiple focal positions accordingly, without having to two-dimensionally scan the template TM from various directions as with, for example, a confocal microscope.

[0177] According to the inspection device 1 of the embodiment, in-focus areas are extracted from the multiple images IM1 to IM8 based on arrangement information regarding the arrangement of the multiple patterns CL on the reference plane RP, which is included in the design data.

[0178] In this way, by referring to the design data, it is possible to easily identify the placement positions of multiple columnar patterns CL on the reference surface RP and extract in-focus areas from multiple images IM1 to IM8 without having to two-dimensionally scan the template TM from various directions as with, for example, a confocal microscope.

[0179] According to the manufacturing method of the template TM of the embodiment, a plurality of columnar patterns CL protruding at different heights from the reference plane RP are formed.

[0180] This allows patterns with different depths to be formed in the resist film 83 at the same time, and the semiconductor device MDV having a plurality of contacts CC respectively connected to the plurality of word lines WL can be easily manufactured. This allows the number of steps and the cost required for manufacturing the semiconductor device MDV to be reduced.

[0181] According to the manufacturing method of the master template TMm and the semiconductor device MDV of the embodiment, the same effects as those of the manufacturing method of the template TM of the embodiment are achieved.

[0182] (Modification) In the above embodiment, an example has been described in which a defect inspection is performed on a template TM having a plurality of columnar patterns CL. However, a template having a pattern different from the above-mentioned template TM can also be inspected by the inspection apparatus 1 of the embodiment.

[0183] 19 to 25, a modified template TMa that can be an inspection target of the inspection device 1 of the embodiment will be described below. In the following Figs. 19 to 25, the same reference numerals are given to the same configurations as those of the above-mentioned embodiment, and the description thereof will be omitted.

[0184] Fig. 19 is a schematic diagram showing an example of the configuration of a template TMa according to a modified example of the embodiment. Fig. 19(a) is a perspective view of the template TMa on the reference plane RP, and Fig. 19(b) is a top view of the staircase pattern PY provided on the template TMa. Fig. 19(c) is a cross-sectional view showing the overall configuration of the template TMa.

[0185] As shown in FIG. 19(c), the template TMa of the modified example includes a staircase pattern PY having a plurality of staircase shapes on a reference plane RP of a mesa portion MS protruding toward the front surface side of a transparent substrate BA.

[0186] As shown in Figures 19(a) and (b), the staircase pattern PY has a rectangular shape when viewed from above, and multiple staircase shapes, i.e., multiple steps SP, whose height increases from the outer periphery of the staircase pattern PY to the center are formed on the four sides of the staircase pattern PY.

[0187] These steps SP have different heights from the reference plane RP. The step height of each step SP is, for example, about several nm to several tens of nm. The number of steps SP from the bottom to the top of the staircase pattern PY is, for example, about several tens to several hundred.

[0188] An example of the case where a template TMa having such a staircase pattern PY is inspected by the inspection device 1 of the embodiment is shown in Fig. 20. Fig. 20 is an explanatory diagram illustrating a state where a template TMa according to a modified example of the embodiment is inspected by the inspection device 1.

[0189] 20, when the staircase pattern PY of the template TMa is imaged, the multiple steps SPa to SPl are assumed to fit within the range imaged in one shot, that is, within the frame of the imaging unit 11. Also, it is assumed that it is not possible to focus on all of the multiple steps SPa to SPl in one shot.

[0190] As in the above-described embodiment, the design data acquisition unit 205 of the integrated control unit 20 that controls the inspection apparatus 1 acquires the design data of the template TMa from the design device 50. The focus determination unit 206 determines a plurality of focus positions required to focus on each of a plurality of steps SP of the template TMa, based on height information of the design data.

[0191] The inspection unit 201 of the overall control unit 20 controls the imaging unit 11 via the imaging control unit 21 to capture a plurality of images IMa0 to IMa4 including a plurality of steps SPa to SPl by focusing on each of the determined focal positions.

[0192] Image IMa0 is a reference image focused on the vicinity of the height position of the reference surface RP of template TMa. Image IMa1 is captured with its focus on the vicinity of the height positions of steps SPa to SPc among the multiple steps SPa to SPl. Images IMa2 to IMa4 are captured with their focus on the vicinity of the height positions of steps SPd to SPf, SPg to SPi, and SPj to SPl, respectively.

[0193] After performing necessary corrections on the images IMa1 to IMa4, the image synthesis unit 207 of the general control unit 20 extracts areas including steps SPa to SPc, SPd to SPf, SPg to SPi, and SPj to SPl from the images IMa1 to IMa4, and applies them to the corresponding areas of the image IMa0. This generates a synthetic image in which all of the steps SPa to SPl are in focus.

[0194] The defect determination section 208 of the integrated control section 20 performs defect inspection for a plurality of steps SPa to SPl based on the generated composite image.

[0195] Next, a method for manufacturing the template TMa to be inspected by the inspection apparatus 1 will be described with reference to Fig. 21. Fig. 21 is a cross-sectional view illustrating a part of a procedure of the method for manufacturing the template TMa according to a modified example of the embodiment.

[0196] As shown in Fig. 21(a), a mesa portion MS is formed on the surface of a transparent substrate BA (see Fig. 19(c)) of the template TMa, and a resist pattern 84p is formed on the upper surface of the mesa portion MS by exposing the outer edge of the mesa portion MS. At this time, the upper surface of the transparent substrate BA excluding the mesa portion MS may be covered with a mask film such as a chromium film (not shown).

[0197] 21(b), the upper surface of the mesa portion MS exposed from the resist pattern 84p is processed, thereby forming a step SPa on the outer periphery of the mesa portion MS.

[0198] 21(c), the resist pattern 84p is slimmed with oxygen plasma or the like to recede the end of the resist pattern 84p on the mesa portion MS, thereby newly exposing the outer periphery of the mesa portion MS.

[0199] Furthermore, the upper surface of the mesa portion MS newly exposed from the resist pattern 84p is processed to form a step SPb on the outer periphery of the mesa portion MS. At this time, the upper surface of the step SPa that has already been formed is removed, and the step SPb is positioned below the step SPb.

[0200] As shown in Fig. 21(d), the slimming of the resist pattern 84p and the processing of the mesa portion MS are repeated to form a plurality of steps SPa-SPf whose positions are lowered stepwise from the upper surface of the mesa portion MS. At this time, the surface of the mesa portion MS exposed below the lowermost step SPf corresponds to the above-mentioned reference plane RP. After that, the remaining resist pattern 84p is removed.

[0201] Thereafter, the completed steps SP are subjected to a defect inspection by the inspection apparatus 1 of the embodiment using the inspection method shown in Fig. 20 described above. If a defect is detected in any of the steps SP in the defect inspection, the template TMa is determined to be defective. If no defect is detected in the defect inspection, the template TMa is determined to be a non-defective product and is used in the manufacture of semiconductor devices, which will be described later.

[0202] In this manner, the template TMa of the modified example is manufactured.

[0203] The above-mentioned method for manufacturing the template TMa is merely an example, and the template TMa of the modified example may be manufactured by a method other than the above. For example, the template TMa may be manufactured using a master template as in the above-mentioned embodiment. Alternatively, for example, a plurality of steps SP may be directly drawn on the upper surface of the mesa portion MS of the transparent substrate BA by an electron beam or the like.

[0204] Next, an example of using the modified template TMa will be described with reference to Figs. 22 to 24. The template TMa is also used when performing an imprint process in, for example, a manufacturing process of a semiconductor device. The processes in Figs. 22 to 24 described below are performed as, for example, a part of the manufacturing method of a semiconductor device.

[0205] 22 to 24 are cross-sectional views sequentially illustrating a part of the procedure of the imprint process using the template TMa according to the modified example of the embodiment.

[0206] As shown in FIG. 22(a), a processing target film PF is formed on a base film UF, and a resist film 85 is formed on the processing target film PF.

[0207] The base film UF is, for example, a part of a silicon substrate, or an insulating film on a silicon substrate, as in the case of Fig. 14(a) above. The processed film PF is, for example, a multilayer film in which multiple types of insulating layers are alternately stacked, as in the case of Fig. 14(a) above.

[0208] The resist film 85 is, like the resist film 83 in FIG. 14(a) described above, an uncured photocurable resin film formed by coating or dropping a resist material, for example.

[0209] In order to transfer the staircase pattern PY of the template TMa to this resist film 85, the template TMa is opposed to the resist film 85 with the surface on which the staircase pattern PY is formed facing the processed film PF.

[0210] 22(b), the staircase pattern PY of the template TMa is pressed against the resist film 85. At this time, a small gap is provided between the upper surface of the step SPf with the largest protrusion amount and the processed film PF so that the mesa portion MS of the template TMa does not contact the processed film PF.

[0211] In this state, when the resist film 85 is irradiated with light such as ultraviolet light that has been transmitted through the template TMa while the template TMa is kept pressed against the resist film 85, the resist film 85 is cured.

[0212] 23(a), when the template TMa is released, a resist pattern 85p to which the staircase pattern PY of the template TMa is transferred is formed. As described above, since the resist film 85 is cured with a gap provided between the template TMa and the processing target film PF, the resist pattern 85p has a resist residual film 85r at the bottom of the transferred staircase pattern.

[0213] Thus, according to the technique using the template TMa, unlike the case where the photolithography technique is used, a stepped pattern having different depths in the resist film 85 is formed in the resist film 85 by one imprint process.

[0214] 23(b), the remaining resist film 85r at the bottom of the stepped pattern is removed using oxygen plasma etc. As a result, the upper surface of the processed film PF is exposed at the bottom of the pattern.

[0215] In addition, when the processing target film PF is processed through the resist pattern 85p, the processing target film PF exposed from the resist pattern 85p is removed, and a terrace TRf to which the resist pattern 85p is transferred is formed. In addition, the film thickness of the resist pattern 85p is reduced, and the pattern at the bottom level disappears. As a result, the processing target film PF is newly exposed on the outer periphery of the terrace TRf.

[0216] As shown in FIG. 24(a), processing of the processing target film PF via the resist pattern 85p continues. As a result, the upper surface of the processing target film PF newly exposed from the resist pattern 85p is removed, and a terrace TRe is formed. The reach depth of the terrace TRf in the processing target film PF further increases. In addition, the film thickness of the resist pattern 85p decreases, the pattern of the second stage from the bottom disappears, and the processing target film PF is newly exposed on the outer periphery of the terrace TRe.

[0217] 24(b), processing of the processing target film PF via the resist pattern 85p is further continued. As a result, the stepped portions of the resist pattern 85p disappear in sequence from the inside to the outside of the pattern, new terraces TR are formed in the processing target film PF, and the depth of each terrace TR increases.

[0218] 24(c), as the processing of the processing target film PF via the resist pattern 85p continues, a plurality of terraces TRa to TRf whose depth increases stepwise are formed in the processing target film PF. Thereafter, the remaining resist pattern 85p is removed.

[0219] With the above, the imprint process using the template TMa is completed.

[0220] Next, an example of application of the above-mentioned terrace TR formed by using the modified template TMa to a semiconductor device will be described with reference to FIG.

[0221] Fig. 25 is a cross-sectional view showing an example of the configuration of a semiconductor device MDVa according to a modified example of the embodiment. Fig. 25(a) is a cross-sectional view showing a schematic configuration of the semiconductor device MDVa of the modified example, and Fig. 25(b) is an enlarged cross-sectional view of a pillar PL provided in the semiconductor device MDVa. In Fig. 25(a), hatching is omitted to improve visibility of the drawing.

[0222] As shown in Fig. 25(a), the semiconductor device MDVa includes a stacked body LMa in which a plurality of word lines WL are stacked, on a source line SL. Although not shown in Fig. 25(a), an insulating layer OL (see Fig. 25(b)) is interposed between each of the plurality of word lines WL.

[0223] The laminate LMa includes a staircase region SR instead of the contact region PR of the laminate LM of the above-described embodiment, and a plurality of contacts CC are provided in the staircase region SR.

[0224] In the staircase region SR, the word lines WL and the insulating layers OL of the laminate LMa are processed in a staircase shape to have a rectangular mortar-shaped configuration in top view. On one side of the mortar-shaped configuration, contacts CC are connected to the terraces of the word lines WL processed in a staircase shape.

[0225] The configuration of the pillars PL and the configuration of the memory cells MC formed in the pillars PL are similar to those of the semiconductor device MDV of the above-described embodiment, and therefore the description of FIG. 25(b) will be omitted.

[0226] In the semiconductor device MDVa having the above-mentioned configuration, the staircase shape in the staircase region SR of the stacked body LMa can be formed by using, for example, the above-mentioned template TMa.

[0227] As described above, the staircase pattern PY of the template TMa is transferred to a resist film formed on the laminate LMa, and the laminate LMa is processed through the resist film, thereby forming terraces on each of the multiple word lines WL having different depths in the laminate LMa, such as the above-mentioned terraces TRa to TRf.

[0228] In addition, similarly to the semiconductor device MDV of the above-mentioned embodiment, at this stage, the laminate LMa may have a structure in which a plurality of silicon oxide layers and silicon nitride layers are laminated, for example, as in the above-mentioned processed film PF. In this case, more precisely, a terrace is formed in each of the plurality of silicon nitride layers to be replaced by the above-mentioned imprint process.

[0229] Thereafter, a replacement process is performed to replace the silicon nitride layer of the laminate LMa with a word line WL such as a tungsten layer, and a plurality of contacts CC are formed to connect to the terraces of the plurality of word lines WL formed by the replacement.

[0230] According to the manufacturing method of the template TMa of the modified example, by applying the defect inspection using the inspection apparatus 1 of the above-mentioned embodiment, the same effects as those of the above-mentioned embodiment can be obtained.

[0231] According to the manufacturing method of the modified template TMa, a staircase pattern PY having a plurality of staircase shapes protruding from a reference surface RP is formed.

[0232] This allows patterns with different depths to be formed in the resist film 85 at the same time, and the semiconductor device MDVa in which the word lines WL are processed in a stepped shape can be easily manufactured. This allows the number of steps and the cost required for manufacturing the semiconductor device MDVa to be reduced.

[0233] [Other embodiments] In the above embodiment, the inspection apparatus 1 acquires the design data of the templates TM, TMa from the design apparatus 50, generates a plurality of images based on the design data, and synthesizes the images to generate a composite image.

[0234] However, the inspection apparatus may perform defect inspection using a method other than the above. Configuration examples of inspection apparatuses 2 and 3 that perform defect inspection without using design data are shown in Figures 26 and 27. In Figures 26 and 27, the same components as those in the above-mentioned embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0235] Fig. 26 is a block diagram showing an example of the functional configuration of the general control unit 120 of an inspection apparatus 2 according to another embodiment, together with other configurations of the inspection apparatus 2. The inspection apparatus 2 shown in Fig. 26 acquires measurement data of a template to be inspected, instead of design data, and performs defect inspection based on this measurement data.

[0236] 26, the general control unit 120 that controls the inspection apparatus 2 includes a measurement data acquisition unit 215 instead of the design data acquisition unit 205. The measurement data acquisition unit 215 acquires, from the measuring apparatus 60, measurement data obtained by measuring the template to be inspected.

[0237] The measuring device 60 is an atomic force microscope (AFM) that measures the height of each of the multiple patterns formed on the template from a reference plane, and a critical dimension-scanning electron microscope (CD-SEM) that measures the position of each of the multiple patterns on the reference plane, etc. The measuring device 60 holds measurement data including the height information and position information.

[0238] The focus determination unit 206 of the integrated control unit 120 determines multiple focus positions based on height information of multiple patterns included in the measurement data, as in the above-mentioned embodiment. The image synthesis unit 207 extracts in-focus areas from multiple captured images based on arrangement information of multiple patterns included in the measurement data, and generates a synthetic image.

[0239] Fig. 27 is a block diagram showing another example of the functional configuration of the general control unit 220 of the inspection apparatus 3 according to another embodiment, together with another configuration of the inspection apparatus 3. The inspection apparatus 3 shown in Fig. 27 performs defect inspection of a template without being based on data such as design data.

[0240] 27, the overall control unit 220 that controls the inspection device 3 does not have the above-mentioned design data acquisition unit 205 and measurement data acquisition unit 215. Moreover, the overall control unit 220 includes a focus determination unit 226 and an image synthesis unit 227 instead of the focus determination unit 206 and the image synthesis unit 207 of the above-mentioned embodiment.

[0241] The focal point determination unit 226 determines a plurality of focal points arranged at a predetermined interval in the height direction within a range where focusing is possible in the inspection device 3. The focal points can be spaced apart according to the focal depth of the light used for inspection, for example. In other words, if the focal depth of the inspection light is, for example, about 50 nm to 200 nm, the interval between the focal points can be set to about 50 nm to 200 nm.

[0242] These multiple focal positions are determined without being based on the height positions of the multiple patterns of the template. The focus determination unit 226 can determine these focal positions so as to include, for example, a range from the lowest height position to the highest height position at which the focus can be achieved in the inspection device 3. This makes it possible to capture multiple images focused on the respective height positions of the multiple patterns of the template.

[0243] The image synthesis unit 227 extracts an area including a focused pattern from among the multiple patterns from each of the multiple images determined as described above. At this time, the image synthesis unit 227 identifies the focused pattern using an image analysis technique. According to the image analysis, the focused pattern can be identified based on at least one of the brightness of each pattern, the brightness of the periphery of the pattern, the amount of change in contrast at the boundary of the pattern, which is the difference between these brightnesses, and the sharpness of the contour line of the pattern. The image synthesis unit 227 generates a synthetic image by combining the areas extracted from the multiple images.

[0244] According to the inspection devices 2 and 3 of the other embodiments, the same effects as those of the inspection device 1 of the above-mentioned embodiment are achieved.

[0245] Additionally, in the above-described embodiments, the inspection devices 1 to 3 perform defect inspection by capturing an image formed from light reflected by a sample such as the templates TM, TMa, etc. However, the inspection device may be equipped with, for example, a transmitted illumination optical system, and may perform defect inspection by capturing an image formed from light transmitted through the sample.

[0246] Furthermore, in the above-described embodiment, the inspection devices 1 to 3 are optical inspection devices, but the inspection devices may be charged particle beam inspection devices that use charged particles such as electron beams.

[0247] In the above-mentioned embodiments, the defect inspection of the templates TM and TMa has been described. However, the inspection device can also perform defect inspection of other samples such as a semiconductor device having a plurality of patterns with different heights from the reference surface. Examples of the patterns of such a semiconductor device include a plurality of holes CH shown in FIG. 16(c) and a plurality of terraces TR shown in FIG. 24(c).

[0248] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0249] 1-3...inspection apparatus, 10...inspection mechanism, 11...imaging unit, 12...light source, 13...stage, 20,120,220...general control unit, 21...imaging control unit, 22...light source control unit, 23...stage control unit, 201...inspection unit, 205...design data acquisition unit, 206,226...focus determination unit, 207,227...image synthesis unit, 208...defect judgment unit, 215...measurement data acquisition unit, CH...hole, CL...columnar pattern, IM,IMa...image, MDV,MDVa...semiconductor device, MS...mesa portion, PY...staircase pattern, RP...reference surface, TR...terrace.

Claims

1. An inspection apparatus for inspecting defects in a sample having an area including a plurality of patterns having different heights from a reference surface, the height being a distance from the reference surface in a first direction intersecting the reference surface, comprising: An imaging unit that images the area; Lenses and a focus determination unit that determines a plurality of target values ​​that define a relative position between the reference surface and the lens based on height information regarding the height; an image acquisition unit that causes the imaging unit to capture a plurality of images including the entire region from the first direction at each of the relative positions between the reference surface and the lens that are adjusted based on the plurality of target values; an image synthesis unit for generating a synthetic image from the plurality of images; a defect determination unit that determines whether or not there is a defect in the sample from the composite image, the plurality of patterns includes a first pattern and a second pattern having a height different from that of the first pattern; the image synthesis unit extracts a first portion including the first pattern from a first image among the plurality of images, extracts a second portion including the second pattern from a second image among the plurality of images, and generates a synthesis image including the first portion and the second portion; the first image is captured at the relative position adjusted based on a first target value among the plurality of target values; the second image is captured at the relative position adjusted based on a second target value among the plurality of target values; the first target value is determined based on first height information relating to the first pattern among the height information; the second target value is determined based on second height information relating to the second pattern among the height information. Inspection equipment.

2. The image synthesis unit generates the synthetic image by arranging the first part and the second part at corresponding positions of a third image, which is different from the first image and the second image among the plurality of images.

2. The inspection device according to claim 1.

3. The image synthesis unit, extracting the first portion and the second portion based on arrangement information regarding an arrangement of the plurality of patterns to generate the composite image; 2. The inspection device according to claim 1.

4. Further comprising a data acquisition unit that acquires CAD data including the height information and the arrangement information.

4. The inspection apparatus according to claim 3.

5. A method for manufacturing a template having an area including a plurality of patterns having different heights from a reference plane, the height being a distance from the reference plane in a first direction intersecting the reference plane, comprising: The manufacturing method includes: forming the plurality of patterns on a transparent substrate; determining a plurality of target values ​​defining a relative position between the reference surface and the lens based on the height information; capturing a first image including the entire area from the first direction in a state where a relative position between the reference surface and the lens is adjusted based on a first target value among the plurality of target values; capturing a second image including the entire area from the first direction in a state where a relative position between the reference surface and the lens is adjusted based on a second target value among the plurality of target values; the plurality of patterns includes a first pattern, extracting a first portion including the first pattern from the first image; the plurality of patterns includes a second pattern having a height different from that of the first pattern, extracting a second portion including the second pattern from the second image; generating a composite image including the first portion and the second portion; determining whether or not there is a defect in the transparent substrate from the composite image; When determining the plurality of target values, determining the first target value based on first height information relating to the first pattern among the height information; determining the second target value based on second height information relating to the second pattern among the height information; A method for manufacturing a template.

6. The manufacturing method comprises: capturing a third image including the entire area from the first direction in a state where a relative position between the reference surface and the lens is adjusted based on a third target value among the plurality of target values; When generating the composite image, generating the composite image by placing the first portion and the second portion in corresponding positions in the third image; A method for manufacturing the template according to claim 5 .

7. When extracting the first part and the second part, extracting the first portion and the second portion based on arrangement information regarding the arrangement of the plurality of patterns; A method for producing the template according to claim 6 .

8. The manufacturing method comprises: acquiring CAD data including the height information and the position information; A method for producing the template according to claim 7 .

9. A method for inspecting a template having an area including a plurality of patterns having different heights from a reference surface, the height being a distance from the reference surface in a first direction intersecting the reference surface, comprising: The inspection method includes: determining a plurality of target values ​​defining a relative position between the reference surface and the lens based on the height information; capturing a first image including the entire area from the first direction in a state where a relative position between the reference surface and the lens is adjusted based on a first target value among the plurality of target values; capturing a second image including the entire area from the first direction in a state where a relative position between the reference surface and the lens is adjusted based on a second target value among the plurality of target values; the plurality of patterns includes a first pattern, extracting a first portion including the first pattern from the first image; the plurality of patterns includes a second pattern having a height different from that of the first pattern, extracting a second portion including the second pattern from the second image; generating a composite image including the first portion and the second portion; determining whether or not there is a defect in the template from the composite image; When determining the plurality of target values, determining the first target value based on first height information relating to the first pattern among the height information; determining the second target value based on second height information relating to the second pattern among the height information; How to validate the template.

10. The inspection method comprises: capturing a third image including the entire area from the first direction in a state where a relative position between the reference surface and the lens is adjusted based on a third target value among the plurality of target values; generating the composite image by placing the first portion and the second portion in corresponding positions in the third image; The method for inspecting a template according to claim 9.

11. When extracting the first part and the second part, extracting the first portion and the second portion from the first image and the second image based on arrangement information regarding an arrangement of the plurality of patterns; The method for inspecting a template according to claim 10.

12. The inspection method comprises: acquiring CAD data including the height information and the position information; The method for inspecting a template according to claim 11.

Images