Superstrate including body and layer, and method for forming and using the same

Abstract

To provide a superstrate that can be used for ink jet-based adaptive flattening.SOLUTION: A superstrate can include a body, a first layer, and a second layer, and the first layer is arranged between the body and the second layer. Each of the first and second layers has a proximal surface and a distal surface on the opposite side of the proximal surface, and the body is closer to the proximal surface than to the distal surface. The Ra of the distal surface of the second layer is smaller than the Ra of the distal surface of the first layer. In a method for manufacturing a superstrate, the relatively high Ra of the distal surface of the first layer may be related to a process or an apparatus used in forming the first layer. The second layer can be formed by using another superstrate, and the Ra of the distal surface of the second layer is substantially the same as a contact surface of the other superstrate.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] SUMMARY The present disclosure relates to a superstrate that includes a body and a layer, and methods of making and using the superstrate. [Background technology]

[0002] The superstrate can be used for inkjet-based adaptive planarization. The superstrate includes a body and a layer on the body, and the contact surface of the superstrate is located along the exposed surface of the layer. In theory, the superstrate used to form the planarization layer should have a perfectly flat contact surface. In practice, a perfectly flat contact surface cannot be achieved. It is desired to further improve the flatness of the contact surface of the superstrate. Summary of the Invention [Means for solving the problem]

[0003] In one aspect, a superstrate includes a superstrate body, a first layer, and a second layer. The first layer has a proximal surface and a distal surface opposite the proximal surface, the body being closer to the proximal surface of the first layer than the distal surface of the first layer. The second layer has a proximal surface and a distal surface opposite the proximal surface, the body being closer to the proximal surface of the second layer than the distal surface of the second layer. The first layer is disposed between the body and the second layer, and the distal surface of the second layer has a Ra smaller than the Ra of the distal surface of the first layer, where Ra is an arithmetic mean surface roughness.

[0004] In one embodiment, the superstrate further comprises a third layer, the third layer being disposed between the first layer and the second layer.

[0005] In another embodiment, the third layer has a proximal surface and a distal surface opposite the proximal surface, the body is closer to the proximal surface of the third layer than the distal surface of the third layer, and the Ra of the distal surface of the third layer is less than the Ra of the distal surface of the first layer.

[0006] In certain embodiments, the third layer comprises a polymerizable compound.

[0007] In yet another embodiment, the second layer comprises an oxide, a nitride, an oxynitride, or a fluoropolymer.

[0008] In yet another embodiment, the first layer comprises a spin-on carbon, polymer, chemical vapor deposition, or physical vapor deposition carbon film.

[0009] In a further embodiment, along the distal surface of the first layer, the first layer does not have an intentional pattern of recesses or protrusions.

[0010] In another embodiment, the Ra of the distal surface of the second layer is at most 0.20 nm.

[0011] In a further embodiment, the nanotopography of the distal surface of the second layer is smaller than the nanotopography of the distal surface of the first layer.

[0012] In certain embodiments, the nanotopography of the distal surface of the second layer is up to 5.9 nm on a lateral scale of 2 mm.

[0013] In another aspect, a method of manufacturing a first superstrate includes forming a first layer along a surface of a body of a first superstrate, the first layer having a proximal surface and a distal surface opposite the proximal surface, the body being closer to the proximal surface of the first layer than the distal surface of the first layer. The method further includes forming a second layer along the distal surface of the first layer, the second layer having a proximal surface and a distal surface opposite the proximal surface, the body being closer to the proximal surface of the second layer than to the distal surface of the second layer, the distal surface of the second layer having a Ra less than the Ra of the distal surface of the first layer, the Ra being an arithmetic mean surface roughness.

[0014] In one embodiment, forming the second layer comprises disposing a precursor of the second layer over the first layer, contacting the precursor with a second superstrate, and curing the precursor to form the second layer, wherein the second superstrate contacts the precursor during curing.

[0015] In another embodiment, forming the second layer comprises disposing a precursor of the second layer along a surface of a second superstrate, contacting the precursor with the first layer, and curing the precursor to form the second layer, wherein the second superstrate is in contact with the precursor during curing.

[0016] In yet another embodiment, forming the first layer comprises disposing a precursor of the first layer along the surface of the body, the precursor having an exposed surface opposite the body, and curing the precursor using a curing energy to form the first layer, wherein no solid object contacts the exposed surface of the precursor during curing.

[0017] In yet another embodiment, the method includes curing the precursor with a curing energy to form the first layer, wherein during curing, the precursor is not uniformly exposed to the curing energy.

[0018] In a further embodiment, the first superstrate has an ultraviolet transmittance of at least 70% and the second superstrate is a silicon wafer.

[0019] In another embodiment, the method further includes forming a third layer along the distal surface of the second layer, the third layer having a proximal surface and a distal surface opposite the proximal surface, the body being closer to the proximal surface of the third layer than the distal surface of the third layer, and the Ra of the distal surface of the third layer being less than the Ra of the distal surface of the first layer.

[0020] In certain embodiments, the Ra of the distal surface of the third layer is at most 0.20 microns.

[0021] In a further aspect, a method of manufacturing an article includes disposing a moldable material on a patterned layer of a workpiece, the workpiece including a substrate, the patterned layer overlying the substrate; contacting the moldable material with a superstrate of claim 1; exposing the moldable material to actinic radiation to form a planarizing layer while the distal surface of the second layer of the superstrate contacts the moldable material to form a planarizing layer; and processing the workpiece to complete formation of the article.

[0022] In an embodiment, the superstrate further includes a third layer, the third layer being disposed between the first layer and the second layer, the third layer having a proximal surface and a distal surface opposite the proximal surface, the body being closer to the proximal surface of the third layer than the distal surface of the third layer, and the Ra of the distal surface of the third layer being less than the Ra of the distal surface of the first layer. [Brief description of the drawings]

[0023] Embodiments are illustrated by way of example and not limitation in the accompanying figures. [Figure 1] FIG. 1 includes a side view of an embodiment of an apparatus, the apparatus including a superstrate. [Diagram 2] FIG. 2 includes a cross-sectional view of the workpiece after forming a buffer layer along a surface of the body of the superstrate. [Diagram 3] FIG. 3 includes a cross-sectional view of the workpiece of FIG. 2 after dispensing a precursor onto the buffer layer. [Figure 4] FIG. 4 includes a cross-sectional view of the workpiece of FIG. 3 during curing of the precursor to form the compensation layer. [Diagram 5] FIG. 5 includes a cross-sectional view of the workpiece of FIG. 4 after removal of the planarizing superstrate used in forming the compensation layer. [Figure 6] FIG. 6 includes a cross-sectional view of the workpiece of FIG. 5 after forming a protective layer over the compensation layer. [Figure 7] FIG. 7 includes a cross-sectional view of a planarized superstraight after dispensing a precursor onto an interface of the superstraight in another embodiment. [Figure 8] FIG. 8 includes a cross-sectional view of the workpiece of FIG. 7 during the process of rotating the workpiece in FIG. 2 so that the buffer layer faces down, contacting a precursor with the buffer layer, and curing the precursor to form a compensation layer. [Figure 9] FIG. 9 includes a cross-sectional view of the workpiece of FIG. 8 after removing the planarizing superstrate, rotating the workpiece in FIG. 2 so that the compensation layer faces up, and forming a protective layer over the compensation layer. [Figure 10] FIG. 10 includes a cross-sectional view of a portion of a workpiece during a formable material dispensing operation. [Figure 11] FIG. 11 includes a cross-sectional view of the workpiece of FIG. 10 during a planarization operation with a superstrate. [Figure 12] FIG. 12 includes a cross-sectional view of the workpiece of FIG. 11 during exposure of the formable material to actinic radiation. [Figure 13] Figure 13 includes a cross-sectional view of the workpiece of Figure 12 after the superstrate has been removed. Those skilled in the art will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve an understanding of embodiments of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] The following description in combination with the drawings is provided to aid in understanding the teachings disclosed herein. The following discussion focuses on specific embodiments and examples of the teachings. This focus is provided to help explain the teachings and should not be construed as a limitation on the scope or applicability of the teachings.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The materials, methods, and examples are illustrative only and are not intended to be limiting. To the extent not described herein, many details concerning specific materials and processing acts are conventional and can be found in texts and other sources in the art.

[0026] Microelectronic device manufacturers are designing physical structures with smaller dimensions on substrates with larger diameters. The shrinking dimensions and larger substrates increase the challenges for microelectronic device manufacturers in manufacturing devices to meet the expectations of microelectronic device manufacturers. Many skilled in the art assume that the surface roughness and nanotopography of the contact surface of the superstrate is substantially the same as the surface roughness and nanotopography of the surface of the body of the superstrate. For example, a superstrate includes a body and one or more layers on the body. The body has a surface that contacts a layer of the one or more layers. The body is made of a glass-based material, and the surface of the body has an arithmetic mean surface roughness Ra of 0.16 nm and a nanotopography of 3.8 nm on a lateral scale of 2 mm. The surface of the body has an acceptable surface roughness and nanotopography. The contact surface of the superstrate is a distal surface of the layer of the one or more layers. One skilled in the art would assume that because the surface of the body has an acceptable surface roughness and nanotopography, the contact surface of the superstrate, which is the distal surface of the layer, will have an acceptable surface roughness and nanotopography.

[0027] The inventors have found that the assumption that the contact surface of the superstrate has substantially the same surface roughness and nanotopography as the surface of the body of the superstrate is repeatedly inappropriate. The layer formed along the surface of the body has a proximal surface and an opposite distal surface, the proximal surface being closer to the body and the distal surface being opposite the proximal surface. The distal surface of the layer has a significantly reduced surface roughness and nanotopography compared to the surface of the body. When the buffer layer is polymethylmethacrylate (PMMA) and formed using a spin-coating and thermal curing process, the distal surface of the buffer layer has an Ra of 0.3 nm and a nanotopography ranging from 6 nm to 8 nm on a lateral scale of 2 mm. A protective layer formed along the distal surface of the buffer layer, the distal surface of the protective layer can be the contact surface of the superstrate. The distal surface of the protective layer has substantially the same Ra and nanotopography as the distal surface of the buffer layer, and may have a slightly higher Ra, e.g., 0.4 nm, where PMMA has an Ra of 0.3 nm. The distal surface of the protective layer has substantially the surface roughness and nanotopography of the distal surface of the buffer layer. Thus, the distal surface of the protective layer has significantly reduced surface roughness and nanotopography compared to the surface of the body of the superstrate.

[0028] To reduce problems with low surface roughness and nanotopography along the contact surface of the superstrate, another layer can be formed on the relatively rough and uneven surface of the underlying layer to improve the surface roughness, nanotopography, or both of the exposed surface of the superstrate. For example, a buffer layer can be formed on the body of the superstrate. The buffer layer has a proximal surface and a distal surface, the proximal surface being closer to the body and the distal surface being opposite the proximal surface. The distal surface of the buffer layer has a significantly reduced surface roughness and nanotopography than the surface of the body. A compensation layer can be formed on the buffer layer. The compensation layer has a proximal surface and a distal surface, the proximal surface being closer to the huffer layer and the distal surface being opposite the proximal surface. The distal surface of the compensation layer has a surface roughness, nanotopography, or both that is significantly better than the surface roughness and nanotopography of the distal surface of the buffer layer. The distal surface of the compensation layer has a surface roughness and nanotopography that is substantially the same as or better than the surface roughness and nanotopography of the body of the superstrate. For example, the distal surface of the compensation layer may have a Ra of 0.08 nm and a nanotopography of 3.0 nm on a lateral scale of 2 mm. The novel superstrate and methods of making and using such superstrate are described in more detail below.

[0029] 1, an apparatus 10 can be used to aid in forming a layer comprising a liquid precursor on a substrate 12. The substrate 12 can be coupled to a substrate chuck 14. As shown, the substrate chuck 14 is a vacuum chuck, but in other embodiments, the substrate chuck 14 can be any chuck, including vacuum, pin-type, groove-type, electrostatic, electromagnetic, etc. The substrate 12 and substrate chuck 14 can be further supported by a stage 16. The stage 16 can provide translational or rotational motion along the X, Y, or Z directions.

[0030] Spaced apart from the substrate 12 is a superstraight 18 that can be used to form a planarization layer over the substrate 12. Further details regarding the superstraight 18 are described later in this specification. The superstraight 18 can be coupled to a superstraight chuck 28. The superstraight chuck 28 can be configured as a vacuum, pin-type, groove-type, electrostatic, electromagnetic, or another similar chuck type. In one embodiment, the superstraight chuck 28 can be coupled to a head 26 such that the superstraight chuck 28 or head 26 can facilitate movement of the superstraight 18.

[0031] The apparatus 10 may further include a fluid dispensing system 32 that is used to place the formable material 112 on the substrate 12. For example, the formable material 112 may include a polymerizable material such as a photoresist (which may be a mixture of monomers and other components such as photoinitiators or thermal initiators). The formable material 112 is disposed on the substrate 12 and formed using techniques such as droplet dispensing, spin coating, dip coating, extrusion coating, or combinations thereof. The formable material 112 may be dispensed on the substrate 12 before or after the desired volume is defined between the superstrate 18 and the substrate 12, depending on design considerations. For example, the formable material 112 may include a monomer mixture that is cured using ultraviolet light, heat, or the like.

[0032] The apparatus 10 may further include an energy source 38, where energy from the energy source 38 is directed along a path 42 within the zone 40. The head 26 and stage 16 may be configured to position the superstrate 18 and the substrate 12 in overlapping relation with the path 42. The superstrate 18 includes a membrane portion 21 that is permeable to energy from the energy source 38. The apparatus 10 may be coordinated by a controller 54 in communication with the stage 16, the head 26, the fluid delivery system 32, or the energy source 38, and may operate on a computer readable program optionally stored in a memory 56. The controller 54 may include a processor (e.g., a central processing unit of a microprocessor or microcontroller), a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like. The controller 54 may be internal to the apparatus. In another embodiment (not shown), the controller 54 may be at least part of a computer external to the apparatus 10, where such computer is bidirectionally coupled to the apparatus 10.

[0033] Attention is now directed to a method of fabricating the superstrate 18. Such a method may include forming a buffer layer 240 along a surface 222 of a body 220 of a workpiece 200, as shown in FIGURE 2. The buffer layer 240 has a proximal surface 242 and a distal surface 244 opposite the proximal surface 242.

[0034] The body 220 provides mechanical support for the workpiece 200. The body 220 has a transmittance of at least 70%, at least 80%, at least 85%, or at least 90% to the actinic radiation used to cure the formable material 112 (in FIG. 1 ). The body 220 can include a glass-based material, silicon, an organic polymer, a siloxane polymer, a fluorocarbon polymer, sapphire, spinel, another similar material, or any combination thereof. The glass-based material can include soda-lime glass, borosilicate glass, alkali barium silicate glass, aluminosilicate glass, quartz, synthetic fused silica, and the like. The choice of material for the body 220 depends on the type of energy used to cure the formable material 112. In one embodiment, the energy can be ultraviolet radiation, and the body 220 has an ultraviolet transmittance of at least 70%. In such an embodiment, a glass-based material can be used for the body 220. The body 220 can have a thickness ranging from 30 microns to 2000 microns.

[0035] The surface 222 of the body 220 can have an area that is at least 90% of the area of ​​the substrate 12, and can have an area the same as or larger than the area of ​​the substrate 12. In one embodiment, the area of ​​the surface is at least 110 cm 2 , at least 300 cm 2 , at least 700 cm 2 or larger, in the same or another embodiment, the surface area is up to 32,000 cm 2 In terms of range, the surface area is 110 cm 2 From 22,000cm 2 , 300cm 2 From 9000cm 2 , or 800cm 2 From 1300cm 2 The range can be:

[0036] The surface 222 of the body has a two-dimensional shape including a circle, an ellipse, a rectangle (including a square), a hexagon, etc. The surface 222 is substantially planar, has no recesses or protrusions, and is referred to as a blank. The surface 222 can have an Ra determined by atomic force microscopy (AFM). To determine Ra according to the SEMI M40 standard, a 3 micron by 0.75 micron area with 512 points by 128 points measurements was used. The surface 222 can have a nanotopography that can be determined by using a Large Area_Zygo Verifire interferometer tool or a New View Zygo interferometer tool (available from Zygo Corporation, Middlefield, CT). The measurement settings are: 632.8 nm measurement wavelength, measurement type: surface, measurement mode: coherence scanning interferometry, fringe rejection: on, FDA resolution: High 2G, scan length: 20 micrometers, field of view: up to 50 mm x 50 mm for Large Area_Zygo Verifire, and up to 8.38 mm x 8.38 mm for New View Zygo. According to SEMI standard M49, nanotopography is measured as peak-valley (PV) values ​​on a lateral scale of 2 mm. We used 9 to 144 points along the surface of the body with an analysis area of ​​2 mm diameter to determine the nanotopography. For surface roughness, the AFM is used with an edge exclusion of 3 mm from the edge of the superstrate, since the measurement may not be accurate if it is too close to the edge of the superstrate 18. The same applies for the measurement of nanotopography. All 9 to 144 points for the measurement of nanotopography are located outside the exclusion area. In one embodiment, the Ra of the surface 222 of the body 220 can be up to 0.20 nm, or more specifically, in the range of 0.04 nm to 0.20 nm. In the same or further embodiment, the nanotopography of the surface 222 of the body 220 can be up to 5.9 nm, or more specifically, in the range of 1.7 nm to 5.9 nm or 2.0 nm to 4.0 nm, on a lateral scale of 2 mm.In one embodiment in which the body 220 is composed of synthetic fused silica, the surface 222 can have an Ra of 0.16 nm and a nanotopography of 3.8 nm on a lateral scale of 2 mm.

[0037] The buffer layer 240 helps reduce the likelihood of particles reaching the body 220 of the workpiece 200, and if the particles reach the surface 222, they may scratch the surface 222 of the body 220. The buffer layer 240 may be formed on the surface 222 of the body 220. The buffer layer 240 has a different composition compared to the body 220. Thus, the buffer layer 240 may be selectively removed compared to the body 220.

[0038] The buffer layer 240 may have a relatively low Young's modulus compared to the body 220 and may include an organic compound. In one embodiment, the buffer layer 240 includes spin-on carbon, polymer, chemical vapor deposition or physical vapor deposition carbon film, or the like. In a particular embodiment, the buffer layer 240 may include an acrylic polymer, such as PMMA. The buffer layer 240 may be formed by coating a precursor and curing the precursor with a curing energy. The curing energy may be ultraviolet, light or infrared, or heat. No solid object is in contact with the exposed surface of the precursor during curing. The buffer layer 240 may be coated and cured on the same chuck, or may be coated on a coater chuck and cured on a separate chuck.

[0039] The inventors have discovered that the distal surface 244 of the buffer layer 240 has a significantly reduced Ra and nanotopography compared to the Ra and nanotopography of the surface 222 of the body 220 of the superstrate 18. The points 280, 282, 284, 286, and 288 along the distal surface 244 can be located at different heights above the surface 222 of the body 220. The Ra along the distal surface 244 of the buffer layer 240 can be 0.32 nm, and the nanotopography along the distal surface 244 of the buffer layer 240 can range from 6 nm to 8 nm on a 2 mm lateral scale. The roughness Ra was measured using an Icon Dimension with a ScanAsyst AFM available from Bruker of Billerica, MA, with the following settings: The stylus was a D-TESPA-V2 coated with diamond-like carbon (DLC) material, the tip height was 10 to 15 microns, with a front angle of 25°, a back angle of 17.5°, and a side angle of 20°, the tip radius was 7 nm to 10 nm, the spring constant was 0.4 Newtons / meter, the sampling interval was 5.86 nm, the ScanAsyst noise threshold was set to 0.5 nm, the evaluation area was 3 microns by 0.75 microns, and a 2nd order flattening operation was performed to separate the nanotopography from the roughness.

[0040] Without being bound by theory, the inventors believe that the low surface roughness and nanotopography along the distal surface 244 of the buffer layer 240 is likely related to the apparatus used to form the buffer layer 240, the process to form the buffer layer 240, or both the apparatus and the process. During curing, the precursors cured to form the buffer layer 240 experience non-uniform curing energy along the surface 222 of the body 220 of the superstrate 240. The distal surface 244 of the buffer layer 240 exhibits a signature corresponding to the chuck used in forming the buffer layer 240, accounting for the thickness variations of the buffer layer 240. The thickness variations are caused by non-uniform evaporation of the solvent due to non-uniform temperature distribution along the body 220 as the buffer layer 240 is thermally cured. Another mechanism causes the thickness variations of the buffer layer 240, at least in part. A compensation layer can be formed on the buffer layer 240 to counter the effects of height variations along the distal surface 244 of the buffer layer 240.

[0041] In a non-limiting embodiment, the compensation layer can be formed using inkjet-based adaptive planarization (IAP). Such a method can include dispensing a precursor material 320 onto the distal surface 244 of the buffer layer 240, as shown in FIG. 3. The precursor material 320 can include a polymerizable compound and a photoinitiator. In a particular embodiment, the precursor material can include an acrylic compound. The precursor material 320 can include or can not include a non-polymerizable compound or a solvent. The non-polymerizable compound can include one or more of a sensitizer, a hydrogen donor, an internal release agent (e.g., a surfactant), an antioxidant, or a combination thereof. The precursor material 320 can include or can not include a surfactant. The surfactants can include non-ionic fluorine compounds such as release agents Captone FS-3100, FC-4432 (3M), S-222N and S-554-100 from Chemguard, Megaface DIC surfactants (F444, F470, F552, F554, F557, F563, etc.) and fluoroether compounds. The surfactants can also include non-fluorinated surfactants such as Si-containing compounds and hydrocarbon surfactants. When the precursor materials are used during the manufacture of semiconductor devices, such precursor materials may include 1% to 2% by weight of surfactant. The precursor material 320 may include the same volume of surfactant as compared to the precursor material used in forming the planarization layer in the manufacture of microelectronic devices. In another embodiment, the precursor material 320 includes no surfactant or up to 100 ppm of surfactant.

[0042] The precursor material 320 can be dispensed as droplets. Although the precursor material 320 is shown in FIG. 3 as droplets of substantially equal volume with substantially equal spacing, in practice the distribution of the precursor material 320 can be adapted to the distal surface 244 of the buffer layer 240. For example, a locally high areal density of droplets is formed where the distal surface 244 of the buffer layer 240 is at a relatively low elevation (e.g., at locations 282 and 284 in FIG. 2) and a locally low areal density of droplets is formed where the distal surface 244 of the buffer layer 240 is at a relatively high elevation (e.g., at locations 280, 286, and 288 in FIG. 2). The total volume of the precursor material 320 can be at least a sufficient amount such that the effective thickness of the precursor material 320 (the total volume of the dispensed precursor material 320 divided by the area of ​​the surface 222 of the body 220) is at least twice the Ra corresponding to the distal surface 244 of the buffer layer 240 plus the overburden thickness of the precursor material. In a typical embodiment, the overburden thickness ranges from 3 nm to 100 nm, while Ra is typically less than 1 nm. Thus, Ra only affects the amount of precursor material 320 used in extreme cases of high roughness. For example, if the Ra of the distal surface 244 is 0.32 nm, the effective thickness of the precursor material 320 is at least 0.32 nm. Also, the effective thickness of the precursor material 320 is at least the value of the nanotopography corresponding to the distal surface 244 of the buffer layer 240. For example, if the nanotopography of the distal surface 244 is 8 nm, the effective thickness of the precursor material 320 is at least 8 nm. The total volume of the precursor material 320 must be at least sufficient to ensure that the different superstrates used to form the compensation layer do not come into contact with the buffer layer 240.

[0043] 3 and 4, the method may further include contacting the precursor material 320 with a superstrate 480 and curing the precursor material 320 to form a compensation layer 460 from the precursor material 320. In one embodiment, the energy source 38 may be used to generate radiation to cure the precursor material 320. The superstrate 480 is different from the superstrate 18 produced from the workpiece 200. The superstrate 480 may include any of the materials as previously described with respect to the body 220. The superstrate 480 may have the same or a different composition compared to the body 220. The area relationship and area of ​​the contact surface 482 of the superstrate 480 may have the same or a different composition compared to the area relationship of the body to the body 220 and the substrate 12. The superstrate 480 has a transmittance of at least 70%, at least 80%, at least 85%, or at least 90% to the radiation used to cure the precursor material 320. In certain embodiments, ultraviolet radiation can be used to cure the precursor material 320 and the superstrate 480 can be composed of a glass-based material.

[0044] The contact surface 482 of the superstrate 480 can have a good Ra, nanotopography, or both Ra and nanotopography compared to the distal surface 244 of the buffer layer 240. The contact surface 482 of the superstrate 480 can have any of the Ra and nanotopography values ​​as described above for the surface 222 of the body 220. The contact surface 482 of the superstrate 480 can have the same or a different Ra compared to the surface 222 of the body 220. The contact surface 482 of the superstrate 480 can have the same or a different nanotopography compared to the surface 222 of the body 220. If the superstrate 480 is composed of synthetic fused silica, the contact surface 482 can have a Ra of 0.16 nm and a nanotopography of 3.8 nm on a lateral scale of 2 mm.

[0045] As the distance between the superstrate 480 and the superstrate 18 decreases, the precursor material 320 comes into contact with the contact surface 482 of the superstrate 480. The droplets of the precursor material 320 coalesce to form a continuous film on the distal surface 244 of the buffer layer 240. The precursor material 320 is cured by a curing energy to form a compensation layer 460 including a proximal surface 462 and a distal surface 464 opposite the proximal surface 462. The manufacturer of the precursor material 320 provides information regarding the specific type of energy used with the precursor material 320. The curing energy can include heat or actinic radiation having a wavelength in the range of 10 nm to 1000 nm. In one embodiment, the actinic radiation can be ultraviolet, visible, or infrared. The compensation layer 460 can be a polymer, for example, a polyacrylate.

[0046] The thickness of the compensation layer 460 is sufficient to fill the low elevations along the distal surface 244 of the buffer layer 240. The compensation layer 460 can have a thickness of at least 0.3 nm, at least 1.1 nm, or at least 20 nm. In the same or another embodiment, the thickness can be up to 2000 nm. In terms of ranges, the compensation layer 460 can have a thickness in the range of 0.3 nm to 2000 nm, 1.1 nm to 950 nm, or 20 nm to 500 nm. After forming the compensation layer 460, the superstrate 480 is removed, as shown in FIG. 5.

[0047] The distal surface 464 of the compensation layer 460 can have substantially the same Ra, nanotopography, or both Ra and nanotopography as the contact surface 482 of the superstrate 480. In one embodiment, the Ra of the distal surface 464 of the compensation layer 460 is at most 0.20 nm, or more specifically, in the range of 0.04 nm to 0.20 nm, and in the same or a different embodiment, the nanotopography of the distal surface 464 of the compensation layer 460 is at most 5.9 nm, or more specifically, in the range of 1.7 nm to 5.9 nm, or 2.0 nm to 4.0 nm, on a lateral scale of 2 mm.

[0048] As shown in FIG. 6, a protective layer 680 is formed along the distal surface 464 of the compensation layer 460. The protective layer has a proximal surface 682 and a distal surface 684 opposite the proximal surface 682. The protective layer 680 can include an oxide, a nitride, an oxynitride, a fluoropolymer, or the like. In certain embodiments, the protective layer 680 includes silicon dioxide, aluminum oxide, an amorphous fluoropolymer, or the like. In one embodiment, the fluoropolymer can include a perfluororodioxole tetrafluoroethylene copolymer. In the same or a different embodiment, the fluoropolymer can include a dioxolane ring. U.S. Pat. No. 10,892,167 is incorporated herein by reference with respect to the fluoropolymers described with respect to layer 210 in such patent. In certain embodiments, the fluoropolymer is a Cytop® brand fluoropolymer available from AGC Chemicals Americas, Inc. of Exton, Pennsylvania, USA.

[0049] Depending on the material selected for protective layer 680, protective layer 680 can be formed by chemical vapor deposition (with or without plasma assistance), atomic layer deposition, physical vapor deposition (e.g., sputtering), spin coating, and the like.

[0050] The protective layer 680 can have a thickness of at least 11 nm, at least 50 nm, or at least 200 nm, and in the same or another embodiment, the thickness is at most 10,000 nm, at most 3,000 nm, or at most 950 nm. In terms of ranges, the protective layer 680 can have a thickness in the range of 11 nm to 10,000 nm, 50 nm to 3,000 nm, or 200 nm to 950 nm.

[0051] Either or both of the surfaces 682 and 684 of the protective layer 680 can have a Ra and nanotopography that is substantially the same as the distal surface 464 of the compensation layer 460. In one embodiment, the Ra of each of the surfaces 682 and 684 of the protective layer 680 can range from 0.04 nm to 0.20 nm. In the same or a further embodiment, the nanotopography of the surfaces 682 and 684 of the protective layer 680 ranges from a maximum of 5.9 nm, or, more specifically, from 1.7 nm to 5.9 nm, or from 2.0 nm to 4.0 nm, on a lateral scale of 2 mm.

[0052] The protective layer 680 can be treated with a release compound (not shown) to facilitate separation of the superstrate 18 from the planarization layer formed with the superstrate 18. In one embodiment, an exemplary release compound is described in U.S. Patent Application Publication No. 2010 / 0109195, incorporated herein by reference for its teachings regarding release compounds. The release compound does not significantly increase the thickness of the protective layer 680, e.g., less than 10 nm. The release compound does not significantly affect the Ra and nanotopography of the interface of the superstrate 18.

[0053] The buffer layer 240, the compensating layer 460, and the protective layer 680 are permeable to process gases. The permeability helps remove gases that are trapped when the superstrate 18 comes into contact with the planarizing precursor material. The buffer layer 240, the compensating layer 460, and / or the protective layer 680 are more permeable to process gases than the body 220. In one embodiment, the process gas is helium.

[0054] The workpiece 200 at this point in the process is substantially the completed superstrate 18. The distal surface 684 of the protective layer 680, or the exposed surface of the release compound, if a release compound is used, is the contact surface of the superstrate 18. The contact surface of the superstrate 18 can have an Ra of up to 0.20 nm, or more specifically, in the range of 0.04 nm to 0.20 nm, and a nanotopography of up to 5.9 nm, or more specifically, in the range of 1.7 nm to 5.9 nm, or 2.0 nm to 4.0 nm, on a lateral scale of 2 mm.

[0055] 2, 7-9, another method of fabricating a superstrate 18 is described. In this embodiment, the precursor material 320 is formed along the interface of the different superstrates (not the superstrate to be fabricated) rather than the distal surface 244 of the buffer layer 240 as described in the previous embodiment. As described in more detail below, such a method allows for a wider selection of materials for the different superstrates, and the interface of the different superstrates has better Ra and nanotopography properties compared to the interface 482 of the superstrate 480.

[0056] The method may begin with a workpiece 200, as shown in Figure 2. The workpiece may include a body 220 and a buffer layer, as previously described.

[0057] The precursor material 320 is formed along the contact surface 782 of the superstrate 780, as shown in FIG. 7, and the precursor material 320 can be formed using any of the techniques and methods described above for forming the precursor material 320 along the distal surface 244 of the buffer layer 240.

[0058] The superstrate 780 can include any of the materials as described above with respect to the superstrate 480. The superstrate 780 can have the same or a different composition as compared to the body 220 of the superstrate 18. In one embodiment, the Ra of the contact surface 782 of the superstrate 780 can be the same or a different embodiment as compared to the surface 222 of the body 220, and in the same or a different embodiment, the nanotopography of the contact surface 782 of the superstrate 780 can be the same or a different embodiment as compared to the surface 222 of the body 220.

[0059] Unlike the previous embodiment, the superstrate 780 does not have a minimum transmittance of the curing radiation used to cure the precursor material 320. Thus, a greater variety of materials may be used for the superstrate 780 compared to the body 220. In a particular embodiment, the superstrate 780 is a silicon wafer. Compared to synthetic fused silica, the interface 782 of the superstrate 780 can have lower values ​​of Ra, nanotopography, or both Ra and nanotopography. In one embodiment, the interface 782 of the superstrate 780 has a Ra of 0.08 and a nanotopography of 3.8 nm on a lateral scale of 2 mm. Through active control in planarizing the interface 782, a Ra of 0.04 and a nanotopography of 1.7 nm on a lateral scale is achieved.

[0060] After forming the buffer layer 240 (FIG. 2), the workpiece 200 is rotated 180 degrees so that the distal surface 244 of the buffer layer 240 faces down. As the distance between the workpiece 200 and the superstrate 780 decreases, the precursor material 320 contacts the distal surface 244 of the buffer layer 240. The droplets of the precursor material 320 coalesce to form a continuous film on the contact surface 782 of the superstrate 780. The precursor material 320 is cured by the curing energy that penetrates the body 220 and the buffer layer 240 to form the compensating layer 860, as shown in FIG. 8. In one embodiment, the energy source 38 can be used to generate radiation to cure the precursor material 320. The compensating layer 860 has a proximal surface 862 and a distal surface 864 opposite the proximal surface 862. In one embodiment, the curing energy can be in the form of ultraviolet light. UV light is transmitted through body 220 and buffer layer 240, but not through superstrate 780. Compensation layer 860 can be a polymer, such as a polyacrylate. Compensation layer 860 can have any thickness and shape, as described above with respect to compensation layer 460.

[0061] The distal surface 864 of the compensation layer 860 can have substantially the same Ra, nanotopography, or both Ra and nanotopography as the contact surface 782 of the superstrate 780. In one embodiment, the Ra of the distal surface 864 of the compensation layer 860 is at most 0.20 nm, or more specifically, in the range of 0.04 nm to 0.20 nm, and in the same or a different embodiment, the nanotopography of the distal surface 864 of the compensation layer 860 is at most 5.9 nm, or more specifically, in the range of 1.7 nm to 5.9 nm, or 2.0 nm to 4.0 nm, on a lateral scale of 2 mm. In one embodiment, the superstrate 780 is composed of single crystal silicon, and the distal surface 864 of the compensation layer 860 can have a Ra of 0.08 nm and a nanotopography of 3.0 nm on a lateral scale. Thus, the distal surface 864 of the compensation layer 860 can have better Ra and nanotopography compared to the distal surface 464 of the compensation layer 460, which was formed using a superstrate 480 composed of fused silica.

[0062] After forming the compensation layer 860, the superstrate 780 is removed and the workpiece 200 including the compensation layer 860 is rotated 180 degrees so that the distal surface 864 faces upward. The rotation can occur before or after the superstrate 780 is removed.

[0063] A protective layer 980 is formed along the distal surface 864 of the compensation layer 860, as shown in FIG. 9. The protective layer 980 can have any material and thickness as described above with respect to the protective layer 680. The protective layer 980 has a proximal surface 982 and a distal surface 984 opposite the proximal surface 982. Compared to the distal surface 684 of the protective layer 680 in FIG. 6, the distal surface 984 of the protective layer 980 in FIG. 9 can have better Ra, nanopotography, or both Ra and nanopotography because the contact surface 782 of the superstrate 780 has better Ra and nanopotography compared to the contact surface 482 of the superstrate 480.

[0064] Similar to protective layer 680, protective layer 980 can be treated with a release compound (not shown) to facilitate release of superstrate 18 from the planarization layer formed with superstrate 18. The release compound can include any of the materials previously described with respect to protective layer 680. The release compound does not significantly increase the thickness of protective layer 980, e.g., less than 10 nm. The release compound does not significantly affect the Ra and nanotopography of the exposed surface of superstrate 18.

[0065] The workpiece 200 at this point in the process is substantially the completed superstrate 18. The distal surface 984 of the protective layer 980, or the exposed surface of the release compound if a release compound is used, is the contact surface of the superstrate 18. The contact surface of the superstrate 18 can have an Ra of up to 0.20 nm, or more specifically, in the range of 0.04 nm to 0.20 nm, and a nanotopography of up to 5.9 nm, or more specifically, in the range of 1.7 nm to 5.9 nm, or 2.0 nm to 4.0 nm, on a lateral scale of 2 mm.

[0066] In another embodiment, the precursor material 320 can be formed along the distal surface 244 of the buffer layer 240 as shown in FIG. 3. Referring to FIG. 4, the superstrate 480 is replaced by the superstrate 780. Unlike FIG. 4, the curing energy can be directed upward through the body 220 and the buffer layer 240 such that the curing energy is received by the precursor material 320 to form the compensation layer 860. Also, after the superstrate 780 contacts the precursor material 320, the structure can be rotated 180 degrees so that the body 220 is on top and the superstrate 780 is on the bottom. The curing energy can be provided along the top of the structure such that the curing energy is received by the precursor material 360 to form the compensation layer 860. After curing, the superstrate 780 is peeled off the compensation layer 860 of the workpiece 200. If the distal surface 864 of the compensation layer 860 is not facing up, the workpiece 200 can be rotated so that the distal surface 864 faces up. A protective layer 980 is formed along the distal surface 864 of the compensating layer 860, as described above with respect to Figure 9. The protective layer 980 may be treated with a release compound, as described above.

[0067] 10-13 show how the superstrate 18 can be used to form an adaptive planarization layer on a substrate. The planarization process can be integrated as part of a manufacturing method to produce an article. The article can be an electrical circuit element, an optical element, a microelectromechanical system (MEMS), a recording element, a sensor, a mold, etc. Examples of electrical circuit elements are semiconductor memories such as dynamic random access memories (DRAMs), static random access memories (SRAMs), flash memories, magnetoresistive memories (MRAMs), microprocessors, microcontrollers, graphics processing units, digital signal processors, field programmable gate arrays (FPGAs), or semiconductor elements, power transistors, charge coupled devices (CCDs), image sensors, etc.

[0068] The features in Figures 10-13 are exaggerated for ease of understanding. Figures 1 and 10 include cross-sectional views of a formable material 112 dispensed from a fluid dispensing system 32 onto a substrate 12 including a substrate 100, such as a semiconductor wafer, and a patterned layer 104. The substrate 100 has a surface 102 that is not perfectly flat. The patterned layer 104 overlies the surface 102 of the substrate 12. The patterned layer 104 may be a previously formed device layer or a resist layer. The patterned layer 104 may be defined using a mask such that, unlike the distal surface 244 of the buffer layer 240 of the superstrate 18, the patterned layer 104 is purposefully patterned and includes protrusions 106 and recesses 108.

[0069] The subsequently formed planarized layer has portions with a significantly greater thickness over portions of surface 102 located at lower elevations, such as recesses 108, and other portions with a significantly lesser thickness over other portions of surface 102 located at higher elevations, such as protrusions 106. Adaptive planarization allows for the formation of a layer whose top surface more closely conforms to the topology of surface 102. A relatively low areal density of droplets of moldable material 112 is distributed over protrusions 106, and a relatively high areal density of droplets of moldable material 112 is distributed in recesses 108.

[0070] 1 and 11, the superstrate 18 is brought into contact with a moldable material 112. The superstrate 18 can have any physical design and is formed by the methods previously described. When the superstrate 18 comes into contact with the moldable material 112, the moldable material 112 expands and fills the space between the superstrate 18 and the pattern layer 104.

[0071] 1 and 12, the moldable material 112 is cured using the energy source 38 to form the planarization layer 124. After the planarization layer 124 is formed, the superstrate 18 is separated from the planarization layer 124, as shown in FIG.

[0072] The distal surface 126 of the planarization layer 124 can have substantially the same Ra, nanotopography, or both Ra and nanotopography as the contact surface of the superstrate 18. With reference to Figures 6 and 9, the Ra and nanotopography along the distal surface 684 of the protective layer 680 (Figure 6) and the distal surface 984 of the protective layer 980 (Figure 9) are very good because the distal surface 464 of the compensation layer 460 (Figure 6) and the distal surface 864 of the compensation layer 860 (Figure 9) have significantly better Ra, nanotopography, or both Ra and nanotopography compared to the superstrate that includes the buffer layer 240 and the protective layer but does not include the compensation layer.

[0073] The embodiments as described herein are useful for forming a superstrate having a smoother and flatter contact surface compared to conventional superstrates. The compensation layer can be formed to have substantially the same surface roughness and nanotopography as the contact surface of another superstrate used to form the compensation layer. In this manner, the compensation layer can help reduce issues related to the relatively low surface roughness and nanotopography of the distal surface of the buffer layer. A protective layer can be formed on the distal surface of the compensation layer. The distal surface of the protective layer can be the contact surface of the superstrate to be fabricated. Thus, the contact surface of the superstrate can have the same or better surface roughness and nanotopography compared to the surface of the body of the superstrate.

[0074] It should be noted that not all of the activities described above in the general description or examples are required, some of the specific activities may not be required, and one or more additional activities may be performed in addition to those described. Furthermore, the order in which the activities are listed is not necessarily the order in which they will be performed.

[0075] Benefits, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, the benefits, advantages, solutions to problems, and any features that give rise to or make more noticeable any benefit, advantage, or solution should not be construed as critical, required, or essential features of any or all of the claims.

[0076] The specification and figures of the embodiments described herein are intended to provide a general understanding of the configuration of the various embodiments. The specification and figures are not intended to be exhaustive or comprehensive descriptions of all of the elements and features of apparatus and systems that use the configurations or methods described herein. Separate embodiments may also be provided in combination in a single embodiment, and conversely, various features that are described for brevity in the context of a single embodiment may also be provided separately or in any subcombination. Furthermore, references to values ​​described in ranges include each and every value within that range. Many other embodiments will be apparent to those skilled in the art after reading this specification. Other embodiments may be used and derived from the present disclosure, such that structural substitutions, logical substitutions, or other changes may be made without departing from the scope of the present disclosure. The present disclosure should therefore be considered illustrative, and not limiting.

Claims

1. It's a super straight, The Super Straight main body, A first layer having a proximal surface and a distal surface opposite to the proximal surface, wherein the body comprises a first layer that is closer to the proximal surface of the first layer than to the distal surface of the first layer, A second layer having a proximal surface and a distal surface opposite to the proximal surface, wherein the body comprises a second layer that is closer to the proximal surface of the second layer than to the distal surface of the second layer, A third layer having a proximal surface and a distal surface opposite to the proximal surface, wherein the body comprises a third layer that is closer to the proximal surface of the third layer than to the distal surface of the third layer, Equipped with, The first layer is disposed between the main body and the second layer, and the Ra of the distal surface of the second layer is smaller than the Ra of the distal surface of the first layer. The third layer is positioned between the first layer and the second layer, and the Ra of the distal surface of the third layer is smaller than the Ra of the distal surface of the first layer. The aforementioned Ra is the arithmetic mean surface roughness. A super straight pipe characterized by its design.

2. The superstraight according to claim 1, characterized in that the third layer comprises a polymerizable compound.

3. The Super Straight according to claim 1, characterized in that the second layer comprises an oxide, nitride, oxynitride, or fluoropolymer.

4. The Super Straight according to claim 1, characterized in that the first layer comprises a spin-on carbon, a polymer, a chemically deposited or physically deposited carbon film.

5. The superstraight according to claim 1, characterized in that the first layer does not have an intentional pattern of recesses or protrusions along the distal surface of the first layer.

6. The superstraight according to claim 1, characterized in that the Ra of the distal surface of the second layer is at most 0.20 nm.

7. The superstraight according to claim 1, characterized in that the nanotopography of the distal surface of the second layer is smaller than the nanotopography of the distal surface of the first layer.

8. The superstraight according to claim 7, characterized in that the nanotopography of the distal surface of the second layer is up to 5.9 nm on a 2 mm lateral scale.

9. A method for producing the first super straight, The first layer is formed along the surface of the body of the first superstraight, wherein the first layer has a proximal surface and a distal surface opposite to the proximal surface, and the body is closer to the proximal surface of the first layer than to the distal surface of the first layer. The second layer is formed along the distal surface of the first layer, wherein the second layer has a proximal surface and a distal surface opposite to the proximal surface, and the main body is closer to the proximal surface of the second layer than to the distal surface of the second layer. A third layer is formed along the distal surface of the second layer, wherein the third layer has a proximal surface and a distal surface opposite to the proximal surface, and the body is closer to the proximal surface of the second layer than to the distal surface of the third layer. Equipped with, The Ra of the distal surface of the second layer and the Ra of the distal surface of the third layer are smaller than the Ra of the distal surface of the first layer, and the Ra is the arithmetic mean surface roughness. A method characterized by the following:

10. Forming the aforementioned two layers is Placing the precursor of the second layer on top of the first layer, The precursor is brought into contact with the second superstraight, The precursor is cured to form the second layer, Equipped with, The second super straight comes into contact with the precursor during curing. The method according to feature 9.

11. Forming the aforementioned two layers is The precursor of the second layer is arranged along the surface of the second superstraight, The precursor is brought into contact with the first layer, The precursor is cured to form the second layer, Equipped with, The second super straight comes into contact with the precursor during curing. The method according to feature 9.

12. Forming the first layer means The first layer precursor is arranged along the surface of the main body, wherein the precursor has an exposed surface on the opposite side of the main body. The first layer is formed by curing the precursor using curing energy, wherein the solid object does not come into contact with the exposed surface of the precursor during curing. The method according to 9, characterized by comprising:

13. Forming the first layer means The precursor of the first layer is arranged along the surface of the main body, The first layer is formed by curing the precursor using curing energy, wherein during curing, the precursor is not uniformly exposed to the curing energy. The method according to 9, characterized by comprising:

14. The method according to 10, characterized in that the first superstraight has an ultraviolet transmittance of at least 70%, and the second superstraight is a silicon wafer.

15. The method according to 9, characterized in that the Ra of the distal surface of the third layer is at most 0.20 microns.

16. A method for manufacturing articles, Placing a moldable material on a pattern layer of a workpiece, wherein the workpiece includes a substrate and the pattern layer is located on the substrate, The moldable material is brought into contact with the superstraight described in claim 1, While the distal surface of the second layer of the superstraight is in contact with the moldable material to form a planar layer, the moldable material is exposed to chemical radiation to form a planar layer, To process the workpiece to complete the formation of the article, A method characterized by comprising:

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