Neutron semiconductor detector and method of manufacturing neutron semiconductor detector

Abstract

To improve spatial resolution.SOLUTION: A neutron semiconductor detector 1 comprises: a first electrode 31; a P layer 32 including a principal surface formed in contact with the first electrode 31, electrically connected to the first electrode 31, and including a boron gallium nitride (BGaN) obtained by mixing gallium nitride (GaN)or GaN as p-type semiconductor and boron nitride (BN); an I layer 33 formed in contact with a back surface of the P layer 32 opposite the principal surface and including BGaN as intrinsic semiconductor; an N layer 34 formed on the I layer 33 and including GaN or aluminum nitride gallium (AlGaN) as N-type semiconductor; and a plurality of second electrodes 35 electrically connected to the N layer 34 and arrayed on the N layer 34.SELECTED DRAWING: Figure 1

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