Semiconductor device, receiver module, and receiver

Abstract

To further downsize a receiver used in wireless power transmission and reduce the cost of the receiver.SOLUTION: A semiconductor device 210 has a semiconductor chip 220 and a semiconductor package 230. The semiconductor chip includes a first rectifier circuit 223-1, a second rectifier circuit 223-2 provided in a direction substantially orthogonal to the first rectifier circuit, a first bonding pad 224-1 connected to the first rectifier circuit, and a second bonding pad 224-3 connected to the second rectifier circuit. The semiconductor package includes a first pad 231-1 connected to the first bonding pad by a first bonding wire, and a second pad 231-3 connected to the second bonding pad by a second bonding wire.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device, a receiving module, and a receiver. [Background technology]

[0002] In recent years, wireless power transfer (WPT) has been used in various fields. By utilizing WPT, problems such as strain on wiring, breakage, and maintenance can be avoided compared to wired power transfer.

[0003] Patent Document 1 proposes a technique for suppressing a drop in the receiving power level and a deterioration in transmission efficiency when linearly polarized or circularly polarized radio waves are received. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2022-024292 A Summary of the Invention [Problem to be solved by the invention]

[0005] The antenna element section of the power receiving antenna device described in Patent Document 1 has a first polarized dipole antenna and a second polarized dipole antenna. The first polarized dipole antenna and the second polarized dipole antenna are arranged orthogonal to each other at 90 degrees, and each receives radio waves of orthogonal polarization planes. A first AC voltage received and output by the first polarized dipole antenna is converted to a first DC voltage by a first rectifier. A second AC voltage received and output by the second polarized dipole antenna is converted to a second DC voltage by a second rectifier.

[0006] Patent Document 1 describes suppressing deterioration of transmission efficiency, but makes no mention of reducing the size and cost of the power receiving antenna device.

[0007] An object of the present disclosure is to further reduce the size and cost of receivers used in wireless power transmission. [Means for solving the problem]

[0008] The semiconductor device includes a semiconductor chip and a semiconductor package. The semiconductor chip includes a first rectifier circuit, a second rectifier circuit provided in a direction substantially perpendicular to the first rectifier circuit, a first bonding pad connected to the first rectifier circuit, and a second bonding pad connected to the second rectifier circuit. The semiconductor package includes a first pad connected to the first bonding pad by a first bonding wire, and a second pad connected to the second bonding pad by a second bonding wire. Effect of the Invention

[0009] According to the present disclosure, it is possible to further reduce the size and cost of receivers used in wireless power transmission. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a diagram showing the overall configuration of a WPT system 1 according to an embodiment of the present invention. [Diagram 2] 2 is a block diagram showing an example of the configuration of a transmitter 100 and a receiver 200 shown in FIG. [Diagram 3] 2 is a schematic diagram illustrating an example of the internal configuration of a semiconductor device 210. FIG. [Figure 4] 4 is a schematic diagram illustrating a configuration example when an antenna is attached to the semiconductor device 210 illustrated in FIG. 3. [Diagram 5] 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. FIG. [Figure 6] 6 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in FIG. 5. FIG. [Figure 7] 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. FIG. [Figure 8]8 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in FIG. 7. FIG. [Figure 9] 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. FIG. [Figure 10] 10 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in FIG. 9. FIG. [Figure 11] 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. FIG. [Figure 12] 12 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in FIG. 11. FIG. [Figure 13] 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. FIG. [Figure 14] 14 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in FIG. 13. FIG. [Figure 15] 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. FIG. [Figure 16] FIG. 2 is a block diagram showing the basic hardware configuration of a computer 90. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In all the drawings explaining the embodiment, the same reference numerals are given to common components, and repeated explanations are omitted. Note that the following embodiment does not unduly limit the contents of the present disclosure described in the claims. In addition, not all of the components shown in the embodiment are essential components of the present disclosure. In addition, each figure is a schematic diagram and is not necessarily illustrated strictly.

[0012] <Summary> In a WPT system, a transmitter that wirelessly supplies power and a receiver that wirelessly receives the power are installed. The receiver has an antenna for receiving wireless signals and a rectifier circuit that rectifies the received wireless signals. In this embodiment, two rectifier circuits are formed in one semiconductor device, and a pair of antennas (for example, linearly polarized antennas) can be connected. The semiconductor device has an internal circuit configured so that the connected antennas are orthogonal. Specifically, for example, at least two rectifier circuits are formed orthogonal to each other within the semiconductor device. Then, simple wiring is formed from each rectifier circuit to a connection terminal provided in the semiconductor device, so that the directions of the connection terminals connected to the rectifier circuits are orthogonal to each other.

[0013] Also, for example, at least two rectifier circuits are formed in a semiconductor chip in the semiconductor device, and bonding pads in the semiconductor chip connected to the rectifier circuits are connected to pads formed in the semiconductor package by bonding wires. At this time, the bonding pads in the semiconductor chip and the pads in the semiconductor package are selected so that the bonding wires associated with each rectifier circuit are approximately perpendicular to each other. As a result, the directions of the connection terminals connected to the rectifier circuits are perpendicular to each other, and the antennas connected to the semiconductor device are perpendicular to each other.

[0014] <1 Overall system configuration> FIG. 1 is a diagram showing the overall configuration of a WPT system 1 according to this embodiment.

[0015] The WPT system 1 shown in Fig. 1 includes, for example, a transmitter 100, a receiver 200, a first information processing device 300, and a second information processing device 400. The WPT system 1 shown in Fig. 1 is used, for example, in a building or a factory. Note that the connection between the transmitter 100 and the first information processing device 300, and the connection between the first information processing device 300 and the second information processing device 400 may be wired or wireless.

[0016] 1 shows an example in which the WPT system 1 includes three transmitters 100, but the number of transmitters 100 included in the WPT system 1 is not limited to three. The number of transmitters 100 included in the WPT system 1 may be two or less, or may be four or more.

[0017] 1 shows an example in which the WPT system 1 includes seven receivers 200, but the number of receivers 200 included in the WPT system 1 is not limited to seven. The number of receivers 200 included in the WPT system 1 may be six or less, or eight or more.

[0018] In this specification, the transmitter 100 is a (power) transmitter 100 in the sense of wirelessly transmitting power, and similarly, the receiver 200 is a (power) receiver 200 in the sense of wirelessly receiving power. As described later, the receiver 200 may transmit, for example, information on the state of the receiver 200 or information on a measurement result by a sensor to the transmitter 100 as a data signal, and the transmitter 100 may receive such a data signal. In this case, the transmitter 100 is a receiver that receives a data signal, and the receiver 200 functions as a transmitter that transmits a data signal.

[0019] 1 shows an example in which the WPT system 1 includes two first information processing devices 300, but the number of first information processing devices 300 included in the WPT system 1 is not limited to two. The number of first information processing devices 300 included in the WPT system 1 may be one, or three or more.

[0020] The transmitter 100 transmits, for example, a power supply signal or a data signal to the receiver 200. The transmitter 100 transmits the power supply signal to the receiver 200 by radio waves in the 920 MHz band, for example. The transmitter 100 transmits the data signal to the receiver 200 by radio waves in the 2.4 GHz band, for example. The transmitter 100 may transmit the data signal by radio waves in the 920 MHz band.

[0021] The transmitter 100 may, for example, feed power to one receiver 200 or to multiple receivers 200. The transmitter 100 may, for example, transmit a data signal to one receiver 200 or to multiple receivers 200. The transmitter 100 may, for example, transmit the same data signal as another transmitter 100, or may transmit a data signal different from that of the other transmitters 100. The transmitter 100 may, for example, transmit a predetermined command signal as a data signal to the receiver 200, or may transmit a preset signal as a data signal to the receiver 200.

[0022] The transmitter 100 receives, for example, a data signal transmitted from the receiver 200. The transmitter 100 may receive, for example, a data signal transmitted from one receiver 200, or may receive data signals transmitted from a plurality of receivers 200. The transmitter 100 transmits the data signal transmitted from the receiver 200 to the first information processing device 300. The transmitter 100 transmits information related to the state of the transmitter 100 to the first information processing device 300.

[0023] The receiver 200 receives, for example, a power supply signal or a data signal transmitted from the transmitter 100. For example, if the receiver 200 has a power storage unit, the receiver 200 converts the power supply signal transmitted from the transmitter 100 into electric power and stores the converted electric power in the power storage unit. For example, if the receiver 200 has a predetermined sensor, the receiver 200 converts the power supply signal transmitted from the transmitter 100 into electric power and drives the sensor with the converted electric power.

[0024] The receiver 200 transmits, for example, information relating to the state of the receiver 200 or information relating to the measurement results of a sensor to the transmitter 100 as a data signal.

[0025] The first information processing device 300 is an information processing device that monitors the operation of the transmitter 100 and the receiver 200 housed in the WPT system 1. For example, the first information processing device 300 determines whether the transmitter 100 or the receiver 200 is in a preset state based on information about the state of the transmitter 100 and the receiver 200 transmitted from the transmitter 100. If it is determined that the transmitter 100 or the receiver 200 is in a preset state, the first information processing device 300 transmits predetermined information to the second information processing device 400.

[0026] In addition, the first information processing device 300 accumulates information about the transmitter 100 and the receiver 200 accommodated in the WPT system 1. For example, the first information processing device 300 stores information about the states of the transmitter 100 and the receiver 200 transmitted from the transmitter 100 in a storage unit provided in the first information processing device 300.

[0027] Moreover, the first information processing device 300 controls the operation of the transmitter 100 accommodated in the WPT system 1. For example, the first information processing device 300 transmits a predetermined instruction or information to the transmitter 100.

[0028] In addition, the first information processing device 300 controls the operation of the second information processing device 400 .

[0029] The second information processing device 400 is, for example, an information processing device operated by an administrator of the WPT system 1. When the second information processing device 400 receives a notification from the first information processing device 300 that the transmitter 100, the receiver 200, or both of them housed in the WPT system 1 are in a predetermined state, the second information processing device 400 presents to the user that the transmitter 100, the receiver 200, or both of them are in the predetermined state.

[0030] Moreover, the second information processing device 400 analyzes information on the status of the transmitter 100 and the receiver 200 stored in the first information processing device 300, and presents predetermined information to the user. The predetermined information is, for example, the following. Information regarding placement of transmitter 100 Information regarding the placement of the receiver 200 Power consumption information Information on power consumption

[0031] <1.1 Transmitter and receiver configuration> FIG. 2 is a block diagram showing an example of the configuration of the transmitter 100 and the receiver 200 shown in FIG. 1. As shown in FIG. 2, the transmitter 100 and the receiver 200 are, for example, spaced apart from each other at a predetermined interval. For example, the transmitter 100 and the receiver 200 are installed at a distance of about several meters. Specifically, for example, the transmitter 100 is fixedly installed at a predetermined high position provided in a high place indoors, for example, on a ceiling or a wall. The receiver 200 is installed in a predetermined device indoors, or placed near a device that requires power supply. The receiver 200 may also be carried by a user. The transmitter 100 transmits a power supply signal to the receiver 200 by radio waves of a predetermined frequency, for example, 920 MHz band. The receiver 200 converts the power supply signal transmitted from the transmitter 100 into power, and charges the device with the converted power, or supplies the converted power to the predetermined device.

[0032] The transmitter 100 includes, for example, an oscillator 101, a transmitting antenna 102, a microcomputer (controller) 103, a data transceiver 104, and a data transmitting / receiving antenna 105. The oscillator 101, the microcomputer 103, the data transceiver 104, and the data transmitting / receiving antenna 105, or at least any combination of these, may be mounted on, for example, a PCB (printed circuit board).

[0033] The oscillator 101 oscillates a signal in a predetermined frequency band, for example, the 920 MHz band. The oscillated signal may be amplified and unnecessary frequency components may be removed, if necessary.

[0034] The transmitting antenna 102 is formed so as to be capable of efficiently transmitting radio waves in the 920 MHz band, for example. The transmitting antenna 102 radiates a signal oscillated by an oscillator 101 as a power supply signal.

[0035] The microcomputer 103 controls the operation of the transmitter 100. The microcomputer 103 is realized by, for example, a semiconductor device equipped with an ARM processor. The microcomputer 103 controls, for example, the transmission of radio waves by the transmission antenna 102.

[0036] The data transceiver 104 performs processes such as converting digital data to analog data, modulating analog data, etc. The data transceiver 104 also performs processes such as demodulating a data signal received by the data transceiver antenna 105, and digitizing the demodulated data. For example, the data transceiver 104 extracts a predetermined signal from the data signal received by the data transceiver antenna 105, converts it into digital data, and transmits it to the microcomputer 103.

[0037] The data transmission / reception antenna 105 is formed to be capable of efficiently transmitting and receiving radio waves in the 2.4 GHz band, for example. The data transmission / reception antenna 105 radiates a data signal supplied from the data transceiver 104. In addition, the data transmission / reception antenna 105 receives a data signal transmitted from the receiver 200.

[0038] The receiver 200 includes, for example, a receiving antenna 201, a rectifier 202, a power management unit 203, a power storage unit 204, a microcomputer 205, a data transceiver 206, and a data transmitting / receiving antenna 207. The receiving antenna 201, the rectifier 202, the power management unit 203, the power storage unit 204, the microcomputer 205, the data transceiver 206, and the data transmitting / receiving antenna 207, or at least any combination of these, may be mounted on, for example, a PCB or an FPC (flexible printed circuit board).

[0039] The receiving antenna 201 is formed so as to be able to efficiently receive radio waves in the 920 MHz band, for example. The receiving antenna 201 receives the power supply signal radiated from the transmitting antenna 102.

[0040] The rectifier 202 rectifies the radio waves received as a power supply signal and converts them into a DC voltage.

[0041] The power management unit 203 manages the DC voltage. For example, the power management unit 203 controls a charging voltage based on the DC voltage. The power management unit 203 charges the power storage unit 204 by controlling the charging voltage. In addition, for example, when the power storage unit 204 stores power equal to or greater than a predetermined capacity, the power management unit 203 supplies the DC voltage to a connected member.

[0042] Further, the power management unit 203 releases the power stored in the power storage unit 204 in response to control from the microcomputer 205 .

[0043] The power storage unit 204 stores power in response to an instruction from the power management unit 203. The power storage unit 204 is realized by, for example, a battery or a capacitor. Furthermore, the power storage unit 204 releases the stored power in response to an instruction from the power management unit 203.

[0044] The microcomputer 205 controls the operation of the receiver 200. The microcomputer 205 is driven by a DC voltage supplied from the power management unit 203 or by power stored in the power storage unit 204. The microcomputer 205 controls the power management unit 203 to cause the power storage unit 204 to release the power stored therein.

[0045] For example, various sensors can be connected to the receiver 200. For example, a heat sensor, a temperature sensor, a light sensor, a humidity sensor, a vibration sensor, and the like are connected to the receiver 200. The sensors connected to the receiver 200 are driven by, for example, a direct current voltage supplied from the power management unit 203 or power discharged from the power storage unit 204. The microcomputer 205 continuously or intermittently monitors the voltage value at a predetermined portion of the receiver 200, the status of the sensor connected to the receiver 200, information detected by the sensor, and the like. The microcomputer 205 transmits the voltage value at a predetermined portion of the receiver 200, the status of the sensor connected to the receiver 200, information detected by the sensor, and the like as digital data to the data transceiver 206. The sensor may be built into the receiver 200.

[0046] The data transceiver 206 performs processes such as converting digital data supplied from the microcomputer 205 into analog data and modulating the analog data. The data transceiver 206 also performs processes such as demodulating a data signal received by a data transceiver antenna 207 and digitizing the demodulated data. The data transceiver 206 is driven by, for example, a DC voltage supplied from the power management unit 203 or power discharged from the power storage unit 204.

[0047] The data transmission / reception antenna 207 is formed to be capable of efficiently transmitting and receiving radio waves in the 2.4 GHz band, for example. The data transmission / reception antenna 207 radiates a data signal supplied from the data transceiver 206. In addition, the data transmission / reception antenna 207 receives a data signal transmitted from the transmitter 100. For example, the data transmission / reception antenna 207 is driven by a DC voltage supplied from the power management unit 203 or power discharged from the power storage unit 204.

[0048] <2. Configuration of semiconductor device installed in receiver> Example 1 FIG. 3 is a schematic diagram showing an example of the internal configuration of the semiconductor device 210. The semiconductor device 210 shown in FIG. 3 has, for example, a semiconductor chip 220 and a semiconductor package 230. The semiconductor package 230, for example, protects the semiconductor chip 220 from the external environment and plays a role of providing an external connection wiring terminal when mounting the semiconductor chip 220 on a printed wiring board. The semiconductor package 230 is made of, for example, resin. In FIG. 3, the top surface of the semiconductor chip 220 is visible, but in reality, for example, the semiconductor package 230 is formed so as to cover the semiconductor chip 220. The size of the semiconductor chip 220 in the x-axis direction is, for example, about 1 to several mm, and the size of the semiconductor chip 220 in the y-axis direction is, for example, about 1 to several mm.

[0049] The semiconductor device 210 includes, for example, the rectifier 202 of the receiver 200 and a part of the configuration of the power management unit 203. The semiconductor device 210 is mounted on, for example, a PCB or an FPC (flexible printed circuit board).

[0050] The semiconductor chip 220 has an LDO (Low Drop Out) 221-1, an LDO 221-2, a reference 222, a rectifier circuit 223-1, and a rectifier circuit 223-2 integrated into one chip. The semiconductor chip 220 may have circuits other than those shown in Fig. 3. The semiconductor chip 220 may not have any of the circuits shown in Fig. 3.

[0051] The LDOs 221-1 and 221-2 are a type of linear regulator. The LDO 221-1 is connected to, for example, a rectifier circuit 223-1. The LDO 221-2 is connected to, for example, a rectifier circuit 223-2.

[0052] The reference 222 generates a reference voltage.

[0053] The rectifier circuits 223-1 and 223-2 rectify the radio waves received as the power supply signal and convert them into a direct current voltage. The rectifier circuits 223-1 and 223-2 are realized by, for example, a capacitor and a diode formed on a multilayer substrate. The rectifier circuit 223-1 is disposed in a direction perpendicular to the rectifier circuit 223-2. Specifically, for example, in FIG. 3, the rectifier circuit 223-1 is disposed at a position where it can be connected to a predetermined side of the semiconductor chip 220 at the shortest distance. Also, the rectifier circuit 223-2 is disposed at a position where it can be connected to a side adjacent to the side where the rectifier circuit 223-1 is disposed nearby at the shortest distance. That is, in FIG. 3, the rectifier circuit 223-1 is disposed at a position where it can be connected to the lower side in the y-axis direction of the semiconductor chip 220 by wiring at the shortest distance. Also, the rectifier circuit 223-2 is disposed at a position where it can be connected to the left side in the x-axis direction of the semiconductor chip 220 by wiring at the shortest distance.

[0054] The semiconductor chip 220 has a plurality of bonding pads. In FIG. 3, for example, the bonding pads are formed so as to surround the chip.

[0055] The rectifier circuit 223-1 is connected to a bonding pad formed nearby by wiring. Specifically, for example, the rectifier circuit 223-1 is connected to the nearest bonding pads 224-1 and 224-2 formed on one side nearby by wiring. In other words, the rectifier circuit 223-1 is connected to the bonding pads 224-1 and 224-2 that can be connected by the shortest wiring distance by wiring, for example. According to FIG. 3, the rectifier circuit 223-1 is connected to the bonding pads 224-1 and 224-2 by wiring formed along the y-axis direction.

[0056] The rectifier circuit 223-2 is connected to a bonding pad formed nearby by wiring. Specifically, for example, the rectifier circuit 223-2 is connected to the nearest bonding pads 224-3 and 224-4 formed on one side nearby by wiring. In other words, the rectifier circuit 223-2 is connected to the bonding pads 224-3 and 224-4 that can be connected by the shortest wiring distance by wiring, for example. According to FIG. 3, the rectifier circuit 223-2 is connected to the bonding pads 224-3 and 224-4 by wiring formed along the x-axis direction.

[0057] Semiconductor package 230 has a plurality of pads. The pads serve to connect to external connection wiring terminals when mounting on a printed wiring board, for example. In Fig. 3, for example, pads 231-1 to 231-4 are formed in semiconductor package 230. The pads formed in semiconductor package 230 are not limited to these.

[0058] The bonding pad 224-1 is connected to the pad 231-1 by a bonding wire 225-1. The bonding pad 224-1 is connected to, for example, the pad 231-1 formed closest to the bonding pad 224-1. In other words, the bonding pad 224-1 is connected to, for example, the pad 231-1 that is substantially opposed to the bonding pad 224-1. According to Fig. 3, the bonding pad 224-1 is connected to the pad 231-1 that is formed to face the bonding pad 224-1 along the y-axis direction. Thus, for example, the bonding wire 225-1 is formed along the y-axis direction in Fig. 3.

[0059] The bonding pad 224-2 is connected to the pad 231-2 by a bonding wire 225-2. The bonding pad 224-2 is connected to, for example, the pad 231-2 formed closest to the bonding pad 224-2. In other words, the bonding pad 224-2 is connected to, for example, the pad 231-2 that is substantially opposed to the bonding pad 224-2. According to Fig. 3, the bonding pad 224-2 is connected to the pad 231-2 that is formed to face the bonding pad 224-2 along the y-axis direction. Thus, for example, the bonding wire 225-2 is formed along the y-axis direction in Fig. 3.

[0060] The bonding pad 224-3 is connected to the pad 231-3 by a bonding wire 225-3. The bonding pad 224-3 is connected to, for example, the pad 231-3 formed closest to the bonding pad 224-3. In other words, the bonding pad 224-3 is connected to, for example, the pad 231-3 that is substantially opposed to the bonding pad 224-3. According to Fig. 3, the bonding pad 224-3 is connected to the pad 231-3 that is formed to face the bonding pad 224-3 along the x-axis direction. Thus, for example, the bonding wire 225-3 is formed along the x-axis direction in Fig. 3.

[0061] The bonding pad 224-4 is connected to the pad 231-4 by a bonding wire 225-4. The bonding pad 224-4 is connected to, for example, the pad 231-4 formed closest to the bonding pad 224-4. In other words, the bonding pad 224-4 is connected to, for example, the pad 231-4 that is substantially opposed to the bonding pad 224-4. According to Fig. 3, the bonding pad 224-4 is connected to the pad 231-4 that is formed to face the pad 231-4 along the x-axis direction. Thus, for example, the bonding wire 225-4 is formed along the x-axis direction in Fig. 3.

[0062] By arranging the rectifier circuit 223-1, the bonding pads 224-1 and 224-2, the pads 231-1 and 231-2, and arranging the rectifier circuit 223-2, the bonding pads 224-3 and 224-4, and the pads 231-3 and 231-4 as described above, the forming direction of the bonding wires 225-1 and 225-2 and the forming direction of the bonding wires 225-3 and 225-4 become substantially perpendicular to each other. Also, the forming direction of the pads 231-1 and 231-2 and the forming direction of the pads 231-3 and 231-4 become substantially perpendicular to each other.

[0063] Fig. 4 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in Fig. 3. The semiconductor device 210 to which the antenna is attached may be called a receiving module. In the example shown in Fig. 4, a dipole antenna 240-1, which is a linearly polarized antenna, is connected to pads 231-1 and 231-2, and a dipole antenna 240-2 is connected to pads 231-3 and 231-4. The dipole antenna 240-1 is formed along the x-axis direction. The dipole antenna 240-2 is formed along the y-axis direction. In other words, the dipole antenna 240-1 and the dipole antenna 240-2 are approximately perpendicular to each other.

[0064] The antenna formed by the rectifier circuit 223-1 and the rectifier circuit 223-2 is not limited to a dipole antenna. A monopole antenna may be formed by the rectifier circuit 223-1 and the rectifier circuit 223-2. The monopole antenna formed by the rectifier circuit 223-1 and the rectifier circuit 223-2 is formed in a direction substantially perpendicular to each other. Also, an inverted F antenna may be formed by the rectifier circuit 223-1 and the rectifier circuit 223-2. The inverted F antenna formed by the rectifier circuit 223-1 and the rectifier circuit 223-2 is formed in a direction substantially perpendicular to each other.

[0065] Example 2 Fig. 5 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. The semiconductor chip 220 shown in Fig. 5 has an LDO 221-1, an LDO 221-2, a reference 222, a rectifier circuit 223-1, and a rectifier circuit 223-2 integrated into one chip. The semiconductor chip 220 may have circuits other than those shown in Fig. 5. The semiconductor chip 220 may not have any of the circuits shown in Fig. 5.

[0066] The rectifier circuits 223-1 and 223-2 rectify the radio waves received as the power supply signal and convert them into a direct current voltage. The rectifier circuits 223-1 and 223-2 are realized by, for example, a capacitor and a diode formed on a multilayer substrate. The rectifier circuit 223-1 is disposed in a direction perpendicular to the rectifier circuit 223-2. Specifically, for example, in FIG. 5, the rectifier circuit 223-1 is disposed at a position where it can be connected to a predetermined corner of the semiconductor chip 220 at the shortest distance. Also, the rectifier circuit 223-2 is disposed at a position where it can be connected to a corner adjacent to the corner where the rectifier circuit 223-1 is disposed nearby at the shortest distance. That is, in FIG. 5, the rectifier circuit 223-1 is disposed at a position where it can be connected to the right corner of the semiconductor chip 220 at the lower side in the y-axis direction by wiring at the shortest distance. Also, the rectifier circuit 223-2 is disposed at a position where it can be connected to the left corner of the semiconductor chip 220 at the lower side in the y-axis direction by wiring at the shortest distance.

[0067] The semiconductor chip 220 has a plurality of bonding pads. In Fig. 5, for example, the bonding pads are formed so as to surround the chip.

[0068] The rectifier circuit 223-1 is connected by wiring to a bonding pad formed at a nearby corner. Specifically, for example, the rectifier circuit 223-1 is connected by wiring to the bonding pads 224-1 and 224-2 formed at the nearest corner. In other words, the rectifier circuit 223-1 is connected by wiring to the bonding pads 224-1 and 224-2 formed at the corner that can be connected with the shortest wiring distance, for example. According to FIG. 5, the rectifier circuit 223-1 is connected to the bonding pads 224-1 and 224-2 located at 45 degrees clockwise with respect to the x-axis direction.

[0069] The rectifier circuit 223-2 is connected by wiring to a bonding pad formed at a nearby corner. Specifically, for example, the rectifier circuit 223-2 is connected by wiring to the bonding pads 224-3 and 224-4 formed at the nearest corner. In other words, the rectifier circuit 223-2 is connected by wiring to the bonding pads 224-3 and 224-4 formed at the corner that can be connected with the shortest wiring distance, for example. According to FIG. 5, the rectifier circuit 223-2 is connected to the bonding pads 224-3 and 224-4 located at a direction of 135 degrees clockwise with respect to the x-axis direction.

[0070] Semiconductor package 230 has a plurality of pads. The pads serve as external connection wiring terminals when mounted on a printed wiring board, for example. In Fig. 5, for example, pads 231-1 to 231-4 are formed in semiconductor package 230. The pads formed in semiconductor package 230 are not limited to these.

[0071] The bonding pad 224-1 is connected to the pad 231-1 by a bonding wire 225-1. The bonding pad 224-1 is connected to, for example, the pad 231-1 formed closest to the bonding pad 224-1. In other words, the bonding pad 224-1 is connected to, for example, the pad 231-1 that is substantially opposed to the bonding pad 224-1. According to Fig. 5, the bonding pad 224-1 is connected to the pad 231-1 that is formed to face the bonding pad 224-1 along the x-axis direction. Thus, for example, the bonding wire 225-1 is formed along the x-axis direction in Fig. 5.

[0072] The bonding pad 224-2 is connected to the pad 231-2 by a bonding wire 225-2. The bonding pad 224-2 is connected to, for example, the pad 231-2 formed closest to the bonding pad 224-2. In other words, the bonding pad 224-2 is connected to, for example, the pad 231-2 that is substantially opposed to the bonding pad 224-2. According to Fig. 5, the bonding pad 224-2 is connected to the pad 231-2 that is formed to face the bonding pad 224-2 along the y-axis direction. Thus, for example, the bonding wire 225-2 is formed along the y-axis direction in Fig. 5.

[0073] The bonding pad 224-3 is connected to the pad 231-3 by a bonding wire 225-3. The bonding pad 224-3 is connected to, for example, the pad 231-3 formed closest to the bonding pad 224-3. In other words, the bonding pad 224-3 is connected to, for example, the pad 231-3 that is substantially opposed to the bonding pad 224-3. According to Fig. 5, the bonding pad 224-3 is connected to the pad 231-3 that is formed to face the bonding pad 224-3 along the y-axis direction. As a result, for example, the bonding wire 225-3 is formed along the y-axis direction in Fig. 5.

[0074] The bonding pad 224-4 is connected to the pad 231-4 by a bonding wire 225-4. The bonding pad 224-4 is connected to, for example, the pad 231-4 formed closest to the bonding pad 224-4. In other words, the bonding pad 224-4 is connected to, for example, the pad 231-4 that is substantially opposed to the bonding pad 224-4. According to Fig. 5, the bonding pad 224-4 is connected to the pad 231-4 that is formed to face the bonding pad 224-4 along the x-axis direction. Thus, for example, the bonding wire 225-4 is formed along the x-axis direction in Fig. 5.

[0075] By arranging the rectifier circuit 223-1, the bonding pads 224-1 and 224-2, the pads 231-1 and 231-2, and arranging the rectifier circuit 223-2, the bonding pads 224-3 and 224-4, and the pads 231-3 and 231-4 as described above, the forming direction of the bonding wires 225-1 and 225-2 and the forming direction of the bonding wires 225-3 and 225-4 become substantially perpendicular to each other. Also, the forming direction of the pads 231-1 and 231-2 and the forming direction of the pads 231-3 and 231-4 become substantially perpendicular to each other.

[0076] Fig. 6 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in Fig. 5. In the example shown in Fig. 6, a dipole antenna 240-1, which is a linearly polarized antenna, is connected to pads 231-1 and 231-2, and a dipole antenna 240-2 is connected to pads 231-3 and 231-4. The dipole antenna 240-1 is formed along a direction of 45 degrees counterclockwise with respect to the x-axis direction. The dipole antenna 240-2 is formed along a direction of 45 degrees clockwise with respect to the x-axis direction. In other words, the dipole antenna 240-1 and the dipole antenna 240-2 are approximately perpendicular to each other.

[0077] Example 3 Fig. 7 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. In the semiconductor chip 220 shown in Fig. 7, the LDO 221-1, the LDO 221-2, and the reference 222 are omitted.

[0078] In FIG. 7, the rectifier circuit 223-1 is disposed in a direction perpendicular to the rectifier circuit 223-2. Specifically, for example, in FIG. 7, the rectifier circuit 223-1 is disposed at a position where it can be connected to a predetermined corner of the semiconductor chip 220 at the shortest distance. Also, the rectifier circuit 223-2 is disposed at a position where it can be connected to a corner adjacent to the corner where the rectifier circuit 223-1 is disposed nearby at the shortest distance. That is, in FIG. 7, the rectifier circuit 223-1 is disposed at a position where it can be connected to the right corner on the lower side in the y-axis direction of the semiconductor chip 220 by wiring at the shortest distance. Also, the rectifier circuit 223-2 is disposed at a position where it can be connected to the right corner on the upper side in the y-axis direction of the semiconductor chip 220 by wiring at the shortest distance. In the third embodiment, the rectifier circuits 223-1 and 223-2 are disposed at a predetermined angle inclined to the rectifier circuits 223-1 and 223-2 described in the second embodiment. Specifically, in the third embodiment, the rectifier circuits 223-1 and 223-2 are arranged at an angle of 45 degrees to the rectifier circuits 223-1 and 223-2 described in the second embodiment.

[0079] The rectifier circuits 223-1 and 223-2 are connected by wiring to bonding pads formed at nearby corners. Specifically, for example, the rectifier circuit 223-1 is connected by wiring to bonding pads 224-1 and 224-2 formed at the nearest corner. According to FIG. 7, the rectifier circuit 223-1 is connected to the bonding pads 224-1 and 224-2 located at a 45-degree clockwise angle with respect to the x-axis direction. Also, for example, the rectifier circuit 223-2 is connected by wiring to bonding pads 224-3 and 224-4 formed at the nearest corner. According to FIG. 7, the rectifier circuit 223-2 is connected to the bonding pads 224-3 and 224-4 located at a 45-degree counterclockwise angle with respect to the x-axis direction.

[0080] The bonding pad 224-1 is connected to the pad 231-1 by a bonding wire 225-1. As shown in Fig. 7, the bonding pad 224-1 is connected to the pad 231-1 formed opposite to the pad 224-1 along the x-axis direction. As a result, for example, the bonding wire 225-1 is formed along the x-axis direction in Fig. 7.

[0081] The bonding pad 224-2 is connected to the pad 231-2 by a bonding wire 225-2. As shown in Fig. 7, the bonding pad 224-2 is connected to the pad 231-2 formed opposite to the pad 224-2 along the y-axis direction. As a result, for example, the bonding wire 225-2 is formed along the y-axis direction in Fig. 7.

[0082] The bonding pad 224-3 is connected to the pad 231-3 by a bonding wire 225-3. As shown in Fig. 7, the bonding pad 224-3 is connected to the pad 231-3 formed opposite to the pad 224-3 along the y-axis direction. As a result, for example, the bonding wire 225-3 is formed along the y-axis direction in Fig. 7.

[0083] The bonding pad 224-4 is connected to the pad 231-4 by a bonding wire 225-4. As shown in Fig. 7, the bonding pad 224-4 is connected to the pad 231-4 formed opposite to it along the x-axis direction. As a result, for example, the bonding wire 225-4 is formed along the x-axis direction in Fig. 7.

[0084] By arranging the rectifier circuit 223-1, the bonding pads 224-1 and 224-2, the pads 231-1 and 231-2, and arranging the rectifier circuit 223-2, the bonding pads 224-3 and 224-4, and the pads 231-3 and 231-4 as described above, the forming direction of the bonding wires 225-1 and 225-2 and the forming direction of the bonding wires 225-3 and 225-4 become substantially perpendicular to each other. Also, the forming direction of the pads 231-1 and 231-2 and the forming direction of the pads 231-3 and 231-4 become substantially perpendicular to each other.

[0085] Fig. 8 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in Fig. 7. In the example shown in Fig. 8, a dipole antenna 240-1, which is a linearly polarized antenna, is connected to pads 231-1 and 231-2, and a dipole antenna 240-2 is connected to pads 231-3 and 231-4. The dipole antenna 240-1 is formed along a direction of 45 degrees counterclockwise with respect to the x-axis direction. The dipole antenna 240-2 is formed along a direction of 45 degrees clockwise with respect to the x-axis direction. In other words, the dipole antenna 240-1 and the dipole antenna 240-2 are approximately perpendicular to each other.

[0086] Example 4 Fig. 9 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. In the semiconductor chip 220 shown in Fig. 9, the LDO 221-1, the LDO 221-2, and the reference 222 are omitted.

[0087] 9, a plurality of sets of rectifier circuits are arranged on the semiconductor chip 220. For example, the semiconductor chip 220 has a set of a rectifier circuit 223-1 and a rectifier circuit 223-2, and a set of a rectifier circuit 223-3 and a rectifier circuit 223-4. The rectifier circuit 223-1 is arranged in a direction perpendicular to the rectifier circuit 223-2. The rectifier circuit 223-3 is arranged in a direction perpendicular to the rectifier circuit 223-4.

[0088] Specifically, for example, in FIG. 9, the rectifier circuits 223-1 and 223-2 are arranged in the same manner as in the first embodiment.

[0089] The rectifier circuit 223-3 is disposed at a position where it can be connected to the side opposite to the side where the rectifier circuit 223-1 is disposed nearby at the shortest distance. The rectifier circuit 223-4 is disposed at a position where it can be connected to the side opposite to the side where the rectifier circuit 223-2 is disposed nearby at the shortest distance. That is, in FIG. 9, the rectifier circuit 223-3 is disposed at a position where it can be connected to the upper side in the y-axis direction of the semiconductor chip 220 by wiring at the shortest distance. The rectifier circuit 223-4 is disposed at a position where it can be connected to the right side in the x-axis direction of the semiconductor chip 220 by wiring at the shortest distance. The pair of the rectifier circuit 223-1 and the rectifier circuit 223-2 and the pair of the rectifier circuit 223-3 and the rectifier circuit 223-4 are, for example, in a point-symmetrical positional relationship.

[0090] The rectifier circuit 223-3 is connected to the bonding pads formed nearby by wiring. Specifically, for example, the rectifier circuit 223-3 is connected to the nearest bonding pads 224-5 and 224-6 formed on one side nearby by wiring. In other words, the rectifier circuit 223-3 is connected to the bonding pads 224-5 and 224-6 that can be connected by the shortest wiring distance by wiring, for example. According to FIG. 9, the rectifier circuit 223-3 is connected to the bonding pads 224-5 and 224-6 by wiring formed along the y-axis direction.

[0091] The rectifier circuit 223-4 is connected to a bonding pad formed nearby by wiring. Specifically, for example, the rectifier circuit 223-4 is connected to the nearest bonding pads 224-7 and 224-8 formed on one side nearby by wiring. In other words, the rectifier circuit 223-4 is connected to the bonding pads 224-7 and 224-8 that can be connected by the shortest wiring distance by wiring, for example. According to Fig. 9, the rectifier circuit 223-4 is connected to the bonding pads 224-7 and 224-8 by wiring formed along the x-axis direction.

[0092] The semiconductor package 230 has a plurality of pads. In Fig. 9, for example, pads 231-1 to 231-8 are formed in the semiconductor package 230. The pads formed in the semiconductor package 230 are not limited to these.

[0093] The bonding pad 224-5 is connected to the pad 231-5 by a bonding wire 225-5. The bonding pad 224-5 is connected to, for example, the pad 231-5 formed closest to the bonding pad 224-5. In other words, the bonding pad 224-5 is connected to, for example, the pad 231-5 that is substantially opposed to the bonding pad 224-5. According to Fig. 9, the bonding pad 224-5 is connected to the pad 231-5 that is formed to face the bonding pad 224-5 along the y-axis direction. Thus, for example, the bonding wire 225-5 is formed along the y-axis direction in Fig. 9.

[0094] The bonding pad 224-6 is connected to the pad 231-6 by a bonding wire 225-6. The bonding pad 224-6 is connected to, for example, the pad 231-6 formed closest to the bonding pad 224-6. In other words, the bonding pad 224-6 is connected to, for example, the pad 231-6 that is substantially opposed to the bonding pad 224-6. According to Fig. 9, the bonding pad 224-6 is connected to the pad 231-6 that is formed to face the bonding pad 224-6 along the y-axis direction. As a result, for example, the bonding wire 225-6 is formed along the y-axis direction in Fig. 9.

[0095] The bonding pad 224-7 is connected to the pad 231-7 by a bonding wire 225-7. The bonding pad 224-7 is connected to, for example, the pad 231-7 formed closest to the bonding pad 224-7. In other words, the bonding pad 224-7 is connected to, for example, the pad 231-7 that is substantially opposed to the bonding pad 224-7. According to Fig. 9, the bonding pad 224-7 is connected to the pad 231-7 that is formed to face the bonding pad 224-7 along the x-axis direction. Thus, for example, the bonding wire 225-7 is formed along the x-axis direction in Fig. 9.

[0096] The bonding pad 224-8 is connected to the pad 231-8 by a bonding wire 225-8. The bonding pad 224-8 is connected to, for example, the pad 231-8 formed closest to the bonding pad 224-8. In other words, the bonding pad 224-8 is connected to, for example, the pad 231-8 that is substantially opposed to the bonding pad 224-8. According to Fig. 9, the bonding pad 224-8 is connected to the pad 231-8 that is formed to face the bonding pad 224-8 along the x-axis direction. Thus, for example, the bonding wire 225-8 is formed along the x-axis direction in Fig. 9.

[0097] By arranging the rectifier circuit 223-1, the bonding pads 224-1 and 224-2, the pads 231-1 and 231-2, and arranging the rectifier circuit 223-2, the bonding pads 224-3 and 224-4, and the pads 231-3 and 231-4 as described above, the forming direction of the bonding wires 225-1 and 225-2 and the forming direction of the bonding wires 225-3 and 225-4 become substantially perpendicular to each other. Also, the forming direction of the pads 231-1 and 231-2 and the forming direction of the pads 231-3 and 231-4 become substantially perpendicular to each other.

[0098] In addition, by arranging the rectifier circuit 223-3, the bonding pads 224-5 and 224-6, and the pads 231-5 and 231-6, and arranging the rectifier circuit 223-4, the bonding pads 224-7 and 224-8, and the pads 231-7 and 231-8, the forming direction of the bonding wires 225-5 and 225-6 is approximately perpendicular to the forming direction of the bonding wires 225-7 and 225-8. In addition, the forming direction of the pads 231-5 and 231-6 is approximately perpendicular to the forming direction of the pads 231-7 and 231-8.

[0099] Fig. 10 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in Fig. 9. In the example shown in Fig. 10, a dipole antenna 240-1, which is a linearly polarized antenna, is connected to pads 231-1 and 231-2, and a dipole antenna 240-2 is connected to pads 231-3 and 231-4. The dipole antenna 240-1 is formed along the x-axis direction. The dipole antenna 240-2 is formed along the y-axis direction. In other words, the dipole antenna 240-1 and the dipole antenna 240-2 are approximately perpendicular to each other.

[0100] 10, a dipole antenna 240-3 is formed on pads 231-5 and 231-6, and a dipole antenna 240-4 is formed on pads 231-7 and 231-8. The dipole antenna 240-3 is formed along the x-axis direction. The dipole antenna 240-4 is formed along the y-axis direction. In other words, the dipole antenna 240-3 and the dipole antenna 240-4 are substantially perpendicular to each other.

[0101] The antenna formed by the rectifier circuit 223-3 and the rectifier circuit 223-4 is not limited to a dipole antenna. A monopole antenna may be formed by the rectifier circuit 223-3 and the rectifier circuit 223-4. The monopole antenna formed by the rectifier circuit 223-3 and the rectifier circuit 223-4 is formed in a direction substantially perpendicular to each other. Also, an inverted F antenna may be formed by the rectifier circuit 223-3 and the rectifier circuit 223-4. The inverted F antenna formed by the rectifier circuit 223-3 and the rectifier circuit 223-4 is formed in a direction substantially perpendicular to each other.

[0102] Example 5 Fig. 11 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. In the semiconductor chip 220 shown in Fig. 11, the LDO 221-1, the LDO 221-2, and the reference 222 are omitted.

[0103] 11, a plurality of sets of rectifier circuits are arranged on the semiconductor chip 220. For example, the semiconductor chip 220 has a set of a rectifier circuit 223-1 and a rectifier circuit 223-2, and a set of a rectifier circuit 223-3 and a rectifier circuit 223-4. The rectifier circuit 223-1 is arranged in a direction perpendicular to the rectifier circuit 223-2. The rectifier circuit 223-3 is arranged in a direction perpendicular to the rectifier circuit 223-4.

[0104] 11, the rectifier circuits 223-1 and 223-2 are arranged in the same manner as in Example 3. In addition, in FIG 11, the rectifier circuits 223-3 and 223-4 are arranged in positions that are line-symmetric or point-symmetric to the rectifier circuits 223-1 and 223-2.

[0105] By arranging the rectifier circuit 223-1, the bonding pads 224-1 and 224-2, the pads 231-1 and 231-2, and arranging the rectifier circuit 223-2, the bonding pads 224-3 and 224-4, and the pads 231-3 and 231-4 as described above, the forming direction of the bonding wires 225-1 and 225-2 and the forming direction of the bonding wires 225-3 and 225-4 become substantially perpendicular to each other. Also, the forming direction of the pads 231-1 and 231-2 and the forming direction of the pads 231-3 and 231-4 become substantially perpendicular to each other.

[0106] In addition, by arranging the rectifier circuit 223-3, the bonding pads 224-5 and 224-6, and the pads 231-5 and 231-6, and arranging the rectifier circuit 223-4, the bonding pads 224-7 and 224-8, and the pads 231-7 and 231-8, the forming direction of the bonding wires 225-5 and 225-6 is approximately perpendicular to the forming direction of the bonding wires 225-7 and 225-8. In addition, the forming direction of the pads 231-5 and 231-6 is approximately perpendicular to the forming direction of the pads 231-7 and 231-8.

[0107] Fig. 12 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in Fig. 11. In the example shown in Fig. 12, a dipole antenna 240-1, which is a linearly polarized antenna, is connected to pads 231-1 and 231-2, and a dipole antenna 240-2 is connected to pads 231-3 and 231-4. The dipole antenna 240-1 is formed along a direction of 45 degrees counterclockwise with respect to the x-axis direction. The dipole antenna 240-2 is formed along a direction of 45 degrees clockwise with respect to the x-axis direction. In other words, the dipole antenna 240-1 and the dipole antenna 240-2 are approximately perpendicular to each other.

[0108] 12, the dipole antenna 240-3 is formed on the pads 231-5 and 231-6, and the dipole antenna 240-4 is formed on the pads 231-7 and 231-8. The dipole antenna 240-3 is formed along a direction of 45 degrees clockwise with respect to the x-axis direction. The dipole antenna 240-4 is formed along a direction of 45 degrees counterclockwise with respect to the x-axis direction. In other words, the dipole antenna 240-3 and the dipole antenna 240-4 are approximately perpendicular to each other.

[0109] Example 6 13 is a schematic diagram showing another example of the internal configuration of the semiconductor device 210. In the semiconductor chip 220 shown in FIG.

[0110] 13, a plurality of sets of rectifier circuits are arranged on the semiconductor chip 220. For example, the semiconductor chip 220 has a set of a rectifier circuit 223-1 and a rectifier circuit 223-2, and a set of a rectifier circuit 223-3 and a rectifier circuit 223-4. The rectifier circuit 223-1 is arranged in a direction perpendicular to the rectifier circuit 223-2. The rectifier circuit 223-3 is arranged in a direction perpendicular to the rectifier circuit 223-4.

[0111] 13, the rectifier circuits 223-1 and 223-2 are arranged in the same manner as in the third embodiment. Also, in FIG. 13, the rectifier circuits 223-3 and 223-4 are arranged in the same manner as in the first embodiment.

[0112] By arranging the rectifier circuit 223-1, the bonding pads 224-1 and 224-2, the pads 231-1 and 231-2, and arranging the rectifier circuit 223-2, the bonding pads 224-3 and 224-4, and the pads 231-3 and 231-4 as described above, the forming direction of the bonding wires 225-1 and 225-2 and the forming direction of the bonding wires 225-3 and 225-4 become substantially perpendicular to each other. Also, the forming direction of the pads 231-1 and 231-2 and the forming direction of the pads 231-3 and 231-4 become substantially perpendicular to each other.

[0113] In addition, by arranging the rectifier circuit 223-3, the bonding pads 224-5 and 224-6, and the pads 231-5 and 231-6, and arranging the rectifier circuit 223-4, the bonding pads 224-7 and 224-8, and the pads 231-7 and 231-8, the forming direction of the bonding wires 225-5 and 225-6 is approximately perpendicular to the forming direction of the bonding wires 225-7 and 225-8. In addition, the forming direction of the pads 231-5 and 231-6 is approximately perpendicular to the forming direction of the pads 231-7 and 231-8.

[0114] Fig. 14 is a schematic diagram showing a configuration example when an antenna is attached to the semiconductor device 210 shown in Fig. 13. In the example shown in Fig. 14, a dipole antenna 240-1, which is a linearly polarized antenna, is connected to pads 231-1 and 231-2, and a dipole antenna 240-2 is connected to pads 231-3 and 231-4. The dipole antenna 240-1 is formed along a direction of 45 degrees counterclockwise with respect to the x-axis direction. The dipole antenna 240-2 is formed along a direction of 45 degrees clockwise with respect to the x-axis direction. In other words, the dipole antenna 240-1 and the dipole antenna 240-2 are approximately perpendicular to each other.

[0115] 14, a dipole antenna 240-3 is formed on pads 231-5 and 231-6, and a dipole antenna 240-4 is formed on pads 231-7 and 231-8. The dipole antenna 240-3 is formed along the y-axis direction. The dipole antenna 240-4 is formed along the x-axis direction. In other words, the dipole antenna 240-3 and the dipole antenna 240-4 are substantially perpendicular to each other.

[0116] As described above, in this embodiment, the semiconductor device 210 has the semiconductor chip 220 and the semiconductor package 230 that covers the semiconductor chip 220. The semiconductor chip 220 has the first rectifier circuit 223-1. The semiconductor chip 220 has the second rectifier circuit 223-2 provided in a direction substantially perpendicular to the first rectifier circuit 223-1. The semiconductor chip 220 has the first bonding pad 224-1 that is connected to the first rectifier circuit 223-1. The semiconductor chip 220 has the second bonding pad 224-3 that is connected to the second rectifier circuit 223-2. The semiconductor package 230 has the first bonding pad 224-1 and the first pad 231-1 that is connected by the first bonding wire 225-1. The semiconductor package 230 has the second bonding pad 224-3 and the second pad 231-3 that is connected by the second bonding wire 225-3. As a result, the directions in which the first pad 231-1 and the second pad 231-3 are formed are approximately perpendicular to each other, and even if multiple antennas are connected to one semiconductor device 210, the directions in which the antennas are formed are approximately perpendicular to each other, making it possible to reduce antenna loss.

[0117] Therefore, the semiconductor device 210 according to this embodiment can achieve further miniaturization and cost reduction of a receiver used in wireless power transmission.

[0118] In the above embodiment, the first bonding pads 224-1 and 224-2, the second bonding pads 224-3 and 224-4, the first pads 231-1 and 231-2, and the second pads 231-3 and 231-4 are each formed in a plurality of numbers. By forming a plurality of bonding pads and pads, the degree of freedom of the connection of an antenna to the semiconductor device 210 increases. In addition, the degree of freedom of the external connection to the semiconductor device 210 also increases.

[0119] In the above embodiment, the semiconductor device 210 includes a plurality of first rectifier circuits 223-1 and a plurality of second rectifier circuits 223-2. That is, the semiconductor device 210 includes a plurality of sets of rectifier circuits. This allows the semiconductor device 210 to be connected to a plurality of antennas.

[0120] In the above embodiment, the semiconductor device 210 has a semiconductor chip 220 and a semiconductor package 230 that covers the semiconductor chip 220. The semiconductor chip 220 has a first rectifier circuit 223-1. The semiconductor chip 220 has a second rectifier circuit 223-2. The semiconductor chip 220 has a first bonding pad 224-1 that is connected to the first rectifier circuit 223-1. The semiconductor chip 220 has a second bonding pad 224-3 that is connected to the second rectifier circuit 223-2. The semiconductor package 230 has a first pad 231-1 that is connected to the first bonding pad 224-1 by a first bonding wire 225-1. The semiconductor package 230 has a second bonding pad 224-3 that is connected to the second pad 231-3 by a second bonding wire 225-3. The first bonding wire 225-1 and the second bonding wire 225-3 are substantially perpendicular to each other. As a result, the directions in which the first pad 231-1 and the second pad 231-3 are formed are substantially perpendicular to each other, and even if multiple antennas are connected to one semiconductor device 210, the directions in which the antennas are formed are substantially perpendicular to each other, making it possible to suppress antenna loss.

[0121] (Modification) In the above embodiment, the rectifier circuits 223-1 and 223-2 are arranged on the chip so as to be orthogonal to each other. However, the rectifier circuits 223-1 and 223-2 do not necessarily have to be orthogonal to each other. If the bonding wires 225-1 and 225-2 and the bonding wires 225-3 and 225-4 are in a substantially orthogonal relationship, the rectifier circuits 223-1 and 223-2 do not have to be orthogonal to each other. Also, if the directions in which the pads 231-1 and 231-2 and the pads 231-3 and 231-4 are arranged are in a substantially orthogonal relationship, the rectifier circuits 223-1 and 223-2 do not have to be orthogonal to each other.

[0122] FIG. 15 is a schematic diagram showing another internal configuration example of the semiconductor device 210. In the example shown in FIG. 15, the rectifier circuits 223-1 and 223-2 are formed in the same direction. The rectifier circuit 223-1 is not disposed at a position that allows connection to a predetermined side of the semiconductor chip 220 at the shortest distance. The rectifier circuit 223-1 is connected to a bonding pad formed on a nearby side by bending a wiring. Specifically, for example, the rectifier circuit 223-1 is connected to the bonding pads 224-1 and 224-2 formed on a nearby side by bending the wiring. According to FIG. 15, the rectifier circuit 223-1 is connected to the bonding pads 224-1 and 224-2 by a wiring formed by extending in the negative direction of the x-axis and extending in the negative direction of the y-axis.

[0123] In this way, the bonding wires 225-1 and 225-2 are approximately orthogonal to the bonding wires 225-3 and 225-4. Also, the directions in which the pads 231-1 and 231-2 are provided are approximately orthogonal to the directions in which the pads 231-3 and 231-4 are provided. Therefore, even if multiple antennas are connected to one semiconductor device 210, the directions in which the antennas are provided are approximately orthogonal to each other, making it possible to suppress antenna loss.

[0124] In the above embodiment, a case has been described in which one rectifier circuit 223 is connected to one or two bonding pads 224. However, the number of bonding pads 224 to which the rectifier circuit 223 is connected is not limited to one or two. The number of bonding pads 224 to which the rectifier circuit 223 is connected may be three or more.

[0125] In the above embodiment, the case where the number of sets of the rectifier circuits 223 is one or two has been described. However, the number of sets of the rectifier circuits 223 is not limited to one or two. The number of sets of the rectifier circuits 223 may be three or more.

[0126] In the above embodiment, the case where the pad 231 is provided on the semiconductor package 230 has been described. However, the pad does not have to be provided on the semiconductor package 230. For example, when the semiconductor device 210 is attached to a substrate of a receiver or a receiving module, the pad may be provided on the substrate. That is, the pad may be provided around the semiconductor chip 220 and connected to the first bonding pad by the first bonding wire. In this case, the semiconductor device 210 does not have to have the semiconductor package 230.

[0127] In addition, in each of the above-mentioned embodiments, the application to the so-called WPT system 1 in which the transmission power consisting of an AC signal is wirelessly transmitted from the transmitter 100 to the receiver 200 has been described, but it is naturally possible to apply it to a system that provides power to the receiver 200 by other methods. Since such systems are known, detailed description will be omitted. As an example, there is a system that transmits power generated by solar power generation to the receiver 200 regardless of whether it is wired or wireless, and further, a system that transmits power to the receiver 200 by laser light regardless of whether it is wired or wireless. In addition, it is also applicable to a configuration in which vibration or sound is given to the receiver 200 and the receiver 200 converts the power of the vibration or the like into power. In addition, it is naturally applicable to a system that uses a known non-contact power supply technology other than the system that wirelessly receives the transmission power consisting of an AC signal, for example, a non-contact power supply technology using a magnetic field coupling method.

[0128] <3 Basic computer hardware configuration> 16 is a block diagram showing the basic hardware configuration of a computer 90. The computer 90 includes at least a processor 91, a main storage device 92, an auxiliary storage device 93, and a communication IF (interface) 99. These are electrically connected to each other by a bus.

[0129] The processor 91 is hardware for executing an instruction set written in a program, and is composed of an arithmetic unit, a register, a peripheral circuit, and the like.

[0130] The main storage device 92 is for temporarily storing programs, data to be processed by the programs, etc. For example, it is a volatile memory such as a DRAM (Dynamic Random Access Memory).

[0131] The auxiliary storage device 93 is a storage device for saving data and programs, such as a flash memory, a hard disk drive (HDD), a magneto-optical disk, a CD-ROM, a DVD-ROM, or a semiconductor memory.

[0132] The communication IF 99 is an interface for inputting and outputting signals for communicating with other computers via a network using a wired or wireless communication standard. The network is composed of the Internet, a LAN, various mobile communication systems constructed by wireless base stations, etc. For example, the network includes 3G, 4G, 5G mobile communication systems, LTE (Long Term Evolution), wireless networks that can connect to the Internet via a specified access point (e.g., Wi-Fi (registered trademark)), etc. In the case of wireless connection, communication protocols include, for example, Z-Wave (registered trademark), ZigBee (registered trademark), Bluetooth (registered trademark), etc. In the case of wired connection, the network also includes a network that is directly connected by a USB (Universal Serial Bus) cable or the like.

[0133] It should be noted that the computer 90 can be virtually realized by distributing all or part of each hardware configuration among multiple computers 90 and connecting them together via a network. In this way, the computer 90 is a concept that includes not only a computer 90 housed in a single housing or case, but also a virtualized computer system.

[0134] <Basic functional configuration of computer 90> A description will now be given of the functional configuration of a computer realized by the basic hardware configuration of a computer 90 shown in Fig. 16. The computer includes at least the functional units of a control unit, a storage unit, and a communication unit.

[0135] The functional units of the computer 90 can also be realized by distributing all or part of the functional units among multiple computers 90 connected to each other via a network. The computer 90 is a concept that includes not only a single computer 90 but also a virtualized computer system.

[0136] The control unit is realized by the processor 91 reading out various programs stored in the auxiliary storage device 93, expanding the programs in the main storage device 92, and executing processes according to the programs. The control unit can realize functional units that perform various information processing depending on the type of program. In this way, the computer is realized as an information processing device that performs information processing.

[0137] The storage unit is realized by a main storage device 92 and an auxiliary storage device 93. The storage unit stores data, various programs, and various databases. Furthermore, the processor 91 can secure a storage area corresponding to the storage unit in the main storage device 92 or the auxiliary storage device 93 in accordance with a program. Furthermore, the control unit can cause the processor 91 to execute processes of adding, updating, and deleting data stored in the storage unit in accordance with the various programs.

[0138] A database refers to a relational database, which is used to manage data sets called tables, which are structured according to rows and columns, by relating them to each other. In a database, a table is called a table, a column in a table is called a column, and a row in a table is called a record. In a relational database, it is possible to set relationships between tables and associate them. Usually, a column is set in each table as a key for uniquely identifying a record, but setting a key in the column is not essential. The control unit can cause the processor 91 to add, delete, or update records in a specific table stored in the storage unit according to various programs.

[0139] The communication unit is realized by the communication IF 99. The communication unit realizes a function of communicating with other computers 90 via a network. The communication unit can receive information transmitted from other computers 90 and input the information to the control unit. The control unit can cause the processor 91 to execute information processing on the received information in accordance with various programs. In addition, the communication unit can transmit information output from the control unit to other computers 90.

[0140] Although several embodiments of the present disclosure have been described above, these embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and modifications are within the scope of the invention and its equivalents as described in the claims, as well as the scope and spirit of the invention.

[0141] In the above description, a "processor" refers to one or more processors. The at least one processor is typically a microprocessor such as a CPU (Central Processing Unit), but may be another type of processor such as a GPU (Graphics Processing Unit). The at least one processor may be a single-core or multi-core.

[0142] Furthermore, the at least one processor may be a processor in the broad sense, such as a hardware circuit (for example, a field-programmable gate array (FPGA) or an application specific integrated circuit (ASIC)) that performs part or all of the processing.

[0143] In the above explanation, information that gives an output for an input is sometimes explained using expressions such as "xxx table", but this information may be data of any structure, or may be a learning model such as a neural network that generates an output for an input. Therefore, "xxx table" can be called "xxx information".

[0144] Furthermore, in the above description, the configuration of each table is an example, and one table may be divided into two or more tables, or all or part of two or more tables may be one table.

[0145] In addition, in the above explanation, the processing may be explained using the "program" as the subject, but since the program is executed by a processor to perform a specified processing step by appropriately using a memory unit and / or an interface unit, etc., the subject of the processing may be the processor (or a device such as a controller having the processor, or a microcomputer).

[0146] The program may be installed in a device such as a computer, or may be, for example, in a program distribution server or a computer-readable (e.g., non-transitory) recording medium. In the following description, two or more programs may be realized as one program, or one program may be realized as two or more programs.

[0147] Furthermore, in the above description, identification numbers are used as identification information for various objects, but other types of identification information (for example, identifiers including alphabetic characters or symbols) other than identification numbers may also be used.

[0148] In addition, in the above description, when describing elements of the same type without distinguishing between them, reference signs (or common signs among the reference signs) may be used, and when describing elements of the same type with distinction between them, the identification numbers (or reference signs) of the elements may be used.

[0149] In the following description, the control lines and information lines are those that are considered necessary for the description, and not all control lines and information lines in the product are necessarily shown. All components may be connected to each other.

[0150] <Additional Notes> The matters described in the above embodiments will be supplemented below. (Appendix 1) A semiconductor device comprising: a first rectifier circuit provided on a semiconductor chip; a second rectifier circuit provided on the semiconductor chip in a direction approximately perpendicular to the first rectifier circuit; a first bonding pad provided on the semiconductor chip and connected to the first rectifier circuit; a second bonding pad provided on the semiconductor chip and connected to the second rectifier circuit; a first pad provided on a substrate to which the semiconductor chip is attached or on a semiconductor package covering the semiconductor chip, and connected to the first bonding pad by a first bonding wire; and a second pad provided on the substrate or the semiconductor package, and connected to the second bonding pad by a second bonding wire. (Appendix 2) A semiconductor device described in Appendix 1, wherein a first bonding pad is formed on a specific side of a semiconductor chip, and a second bonding pad is formed on an adjacent side of the semiconductor chip, the first pad is formed at a position generally opposite the first bonding pad, and the second pad is formed at a position generally opposite the second bonding pad. (Appendix 3) A semiconductor device described in Appendix 1, wherein a first bonding pad is formed at a specific corner of a semiconductor chip, and a second bonding pad is formed at an adjacent corner of the semiconductor chip, the first pad is formed at a position generally opposite the first bonding pad, and the second pad is formed at a position generally opposite the second bonding pad. (Appendix 4) The semiconductor device according to any one of (Supplementary Note 1) to (Supplementary Note 3), wherein a plurality of first bonding pads, a plurality of second bonding pads, a plurality of first pads, and a plurality of second pads are formed. (Appendix 5) The semiconductor device according to any one of (Supplementary Note 1) to (Supplementary Note 4), comprising a plurality of first rectifier circuits and a plurality of second rectifier circuits. (Appendix 6) A receiver module having a semiconductor device, a first linearly polarized antenna connected to the semiconductor device, and a second linearly polarized antenna connected to the semiconductor, wherein the semiconductor device has a first rectifier circuit provided on a semiconductor chip, a second rectifier circuit provided on the semiconductor chip in a direction approximately perpendicular to the first rectifier circuit, a first bonding pad provided on the semiconductor chip and connected to the first rectifier circuit, a second bonding pad provided on the semiconductor chip and connected to the second rectifier circuit, a first pad provided on a substrate to which the semiconductor chip is attached or a semiconductor package covering the semiconductor chip and connected to the first bonding pad by a first bonding wire, and a second pad provided on the substrate or semiconductor package and connected to the second bonding pad by a second bonding wire, and the first linearly polarized antenna is connected to the first pad, and the second linearly polarized antenna is connected to the second pad. (Appendix 7) A receiver having a power storage unit, a semiconductor device, a first linearly polarized antenna connected to the semiconductor device, and a second linearly polarized antenna connected to the semiconductor device, wherein the semiconductor device has a first rectifier circuit provided on a semiconductor chip, a second rectifier circuit provided on the semiconductor chip in a direction approximately perpendicular to the first rectifier circuit, a first bonding pad provided on the semiconductor chip and connected to the first rectifier circuit, a second bonding pad provided on the semiconductor chip and connected to the second rectifier circuit, a first pad provided on a substrate to which the semiconductor chip is attached or a semiconductor package covering the semiconductor chip and connected to the first bonding pad by a first bonding wire, and a second bonding pad provided on the substrate or semiconductor package and connected to the second bonding wire, wherein the first linearly polarized antenna is connected to the first pad, and the second linearly polarized antenna is connected to the second pad. (Appendix 8) A semiconductor device comprising: a first rectifier circuit provided on a semiconductor chip; a second rectifier circuit provided on the semiconductor chip; a first bonding pad provided on the semiconductor chip and connected to the first rectifier circuit; a second bonding pad provided on the semiconductor chip and connected to the second rectifier circuit; a first pad provided on a substrate for mounting the semiconductor chip or a semiconductor package covering the semiconductor chip, and connected to the first bonding pad by a first bonding wire; and a second pad provided on the substrate or the semiconductor package, and connected to the second bonding pad by a second bonding wire, wherein the first bonding wire and the second bonding wire are approximately perpendicular to each other. (Appendix 9) A semiconductor device described in Appendix 8, wherein a first bonding pad is formed on a predetermined side of a semiconductor chip, and a second bonding pad is formed on an adjacent side of the semiconductor chip, the first pad is formed at a position approximately opposite to the first bonding pad, and the second pad is formed at a position approximately opposite to the second bonding pad. (Appendix 10) A semiconductor device described in Appendix 8, wherein a first bonding pad is formed at a specific corner of a semiconductor chip, and a second bonding pad is formed at an adjacent corner of the semiconductor chip, the first pad is formed at a position generally opposite the first bonding pad, and the second pad is formed at a position generally opposite the second bonding pad. (Appendix 11) The semiconductor device according to any one of (Supplementary Note 8) to (Supplementary Note 10), wherein a plurality of first bonding pads, a plurality of second bonding pads, a plurality of first pads, and a plurality of second pads are formed. (Appendix 12) The semiconductor device according to any one of (Supplementary Note 1) to (Supplementary Note 11), comprising a plurality of first rectifier circuits and a plurality of second rectifier circuits. (Appendix 13) a first bonding pad provided on the semiconductor chip and connected to the first rectifier circuit; a second bonding pad provided on the semiconductor chip and connected to the second rectifier circuit; a first pad provided on a substrate for mounting the semiconductor chip or a semiconductor package covering the semiconductor chip and connected to the first bonding pad by a first bonding wire; a second pad provided on the substrate or the semiconductor package and connected to the second bonding wire; a first bonding pad provided on a first bonding pad and connected to the first bonding wire; (Appendix 14) a first bonding pad provided on the semiconductor chip and connected to the first rectifier circuit; a second bonding pad provided on the semiconductor chip and connected to the second rectifier circuit; a first pad provided on a substrate for mounting the semiconductor chip or a semiconductor package covering the semiconductor chip and connected to the first bonding pad by a first bonding wire; a second pad provided on the substrate or the semiconductor package and connected to the second bonding wire; [Explanation of symbols]

[0151] 1. WPT system 100...Transmitter 101...Oscillator 102...Transmitting antenna 103...Microcomputer 104...Data transmitter / receiver 105…Data transmission / reception antenna 200…Receiver 201…Receiving antenna 202…Rectifier 203…Power management department 204…Electricity storage unit 205…Microcomputer 206...Data transmitter / receiver 207…Data transmission / reception antenna 210...Semiconductor device 220…Semiconductor chip 230...Semiconductor packages 300...First information processing device 400...Second information processing device

Claims

[Claim 1] A first rectifier circuit provided on a semiconductor chip, The semiconductor chip includes a second rectifier circuit provided in a direction substantially perpendicular to the first rectifier circuit, A first bonding pad is provided on the semiconductor chip and connected to the first rectifier circuit, A second bonding pad is provided on the semiconductor chip and connected to the second rectifier circuit, A first bonding pad is provided on a substrate on which the semiconductor chip is mounted, or on a semiconductor package covering the semiconductor chip, and is connected by a first bonding wire. The substrate or the semiconductor package is provided with the second bonding pad and the second pad connected by the second bonding wire. A semiconductor device equipped with a semiconductor device.

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