Display device

By employing transparent unipolar transistors with a capacitive element and a gate electrode on the back channel region, the semiconductor display devices achieve higher pixel aperture ratios and reduced power consumption while maintaining image quality and reliability.

JP2025000770AActive Publication Date: 2025-01-07SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2024166483
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2013-06-05
Filing Date
2024-09-25
Publication Date
2025-01-07
Estimated Expiration
2034-05-26

AI Technical Summary

Technical Problem

Semiconductor display devices face challenges in achieving higher pixel aperture ratios to reduce power consumption while maintaining image quality and reliability, particularly due to issues with transistor threshold voltage shifts and capacitance values affecting liquid crystal alignment.

Method used

The use of transparent unipolar transistors with a capacitive element featuring a nitride insulating film and a pixel electrode, along with a gate electrode on the back channel region to stabilize threshold voltage and maintain capacitance, is implemented to enhance pixel aperture ratio and reduce power consumption.

Benefits of technology

This configuration increases the pixel aperture ratio, stabilizes threshold voltage, and reduces power consumption while ensuring high image quality and reliability in semiconductor display devices.

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Abstract

To provide a semiconductor device which has high reliability, and with which it is possible to realize a narrowed frame.SOLUTION: A drive circuit includes a first transistor having a first gate and a second gate electrically connected via a semiconductor film that is held therebetween, and a second transistor of which one of the source and the drain is electrically connected to one of the source and the drain of the first transistor. A pixel unit includes a third transistor, a liquid crystal element, and a capacitive element, and the liquid crystal element has a light-transmissive first conductive film electrically connected to one of the source and the drain of the third transistor, a second conductive film, a liquid crystal layer to which an electrical field generated between the first and the second conductive films is applied. The capacitive element includes a first conductive film, a light-transmissive third conductive film, and a nitride insulating film located between the first and the third conductive films, the nitride insulting film being located between the semiconductor film and the second gate of the first transistor.SELECTED DRAWING: Figure 1
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