Semiconductor device and manufacturing method thereof

The semiconductor device addresses the challenge of forming contact plugs on electrode layers by using a laminated film structure with a concave-shaped plug, which reduces short circuits and improves pressure resistance, resulting in a more reliable and efficient semiconductor device.

JP2025040883APending Publication Date: 2025-03-25KIOXIA CORP
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Patent Information

Application Number
JP2023147955
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-09-12
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

The existing semiconductor devices face challenges in forming contact plugs on electrode layers without short circuits, due to the complexity of the step structure and the need for precise placement and shape of the contact plugs.

Method used

The semiconductor device includes a first laminated film with alternately stacked insulating films and electrode layers, and a first plug with a concave shape at its lower end, which is designed to extend in the first direction and suitably placed on the top-level electrode layer, enhancing the distance between the plug and adjacent electrode layers to prevent short circuits.

Benefits of technology

This configuration allows for the effective formation of contact plugs on electrode layers, reducing the risk of short circuits and improving the pressure resistance between the contact plug and unconnected word lines, thereby enhancing the reliability and efficiency of the semiconductor device.

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Abstract

To provide a semiconductor device and a manufacturing method thereof capable of suitably forming a contact plug on an electrode layer.SOLUTION: A semiconductor device according to an embodiment includes a first laminated film and a first plug. The first laminated film has a plurality of first insulating films and a plurality of electrode layers alternately laminated in a first direction. The first plug is provided on a top first electrode layer of the plurality of electrode layers and extends in the first direction. A central portion of a lower end of the first plug has a concave shape.SELECTED DRAWING: Figure 1
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