Crystal film, laminate structure, semiconductor device, electronic apparatus, and system

Abstract

To provide a crystal film having excellent crystalline properties useful for a semiconductor device or the like, and a laminate structure.SOLUTION: A crystal film contains, as a main component, a compound oxide containing germanium. The compound oxide includes at least one or more of metal elements of the group 4 of the periodic table, has a crystal structure of tetragonal, and an area of 100 mm2 or more. For example, a crystal film having the film thickness of 1 μm or more is used for an application of a semiconductor device.SELECTED DRAWING: Figure 1