Manufacturing method of semiconductor composite device and manufacturing method of composite integrated film

Abstract

To easily eliminate defects while increasing packaging density.SOLUTION: A composite integrated film 1 comprises a film rear face 1B including a substrate rear face 2 and an electrode rear face 20B, formed in an extremely flat shape. A circuit board 70 comprises a substrate surface 70A including an insulation surface 73A and a pad surface 80A, formed in an extremely flat shape. An LED display indication part 61 allows, in a state where the electrode rear face 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 are bonded to each other by intermolecular force thereby physically and electrically connected, the characteristics of the composite integrated film 1 to be inspected while being operated and the composite integrated film 1 to be easily peeled off and replaced at an abnormal site. This enables the LED display indication part 61 to increase the packaging density while significantly improving the production yield.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor composite device and a method for manufacturing a composite integrated film, and is suitable for application to a display device of a micro-LED system configured by arranging a plurality of small-sized LEDs (Light Emitting Diodes), for example.

Background Art

[0002] In recent years, as display devices, those using liquid crystal panels have been widely popularized, and those using new types of displays such as organic EL (electro-luminescence) systems and micro-LED systems have been developed for the purpose of improving image quality and the like.

[0003] Among these, in a micro-LED display (hereinafter also referred to as a micro-LED display), for example, one pixel (also called a pixel or a dot) is constituted by three-color LED elements of red (R), green (G), and blue (B), and a large number of LED elements are arranged in a grid pattern on a circuit board. This micro-LED display can display a high-quality image by finely controlling the light emission intensity of each LED element individually.

[0004] Generally, when mounting an electronic component such as a minute LED element on a circuit board, flip-chip mounting is performed. In this flip-chip mounting, the electrodes of the electronic component and the electrodes on the circuit board are eutectically bonded to form an alloy, whereby they are physically fixed and electrically connected.

[0005] By the way, regarding a micro-LED display, reduction of the defect rate in the manufacturing process, so-called improvement of the yield, is a major issue. In particular, in flip-chip mounting, when an electronic component mounted on a substrate is determined to be defective, removing the electronic component from the circuit board will cause considerable damage to the electrodes, so it has been difficult to stably mount a new electronic component in the same place.

[0006] Therefore, various methods have been proposed mainly for micro-LED displays to improve the yield by eliminating defects. For example, Patent Document 1 proposes a method of pre-mounting redundant LED elements on a circuit board and selectively wiring according to the inspection results. Patent Document 2 proposes a method of providing a redundant space in which LED elements can be mounted within a pixel on a circuit board and mounting new LED elements in the vicinity of a location determined to be defective.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0008] However, although the above-described methods lead to an improvement in yield, they require space for mounting redundant LED elements on the circuit board, so it is impossible to improve the integration degree of display pixels (so-called pixels), that is, the mounting density and pixel density, and it is difficult to achieve high-definition display.

[0009] The present invention has been made in consideration of the above points, and proposes a method for manufacturing a semiconductor composite device and a method for manufacturing a composite integrated film that can easily eliminate defects and increase the mounting density.

Means for Solving the Problems

[0010] In order to solve such problems, in the method for manufacturing a semiconductor composite device of the present invention, there are a pickup step of picking up a composite integrated film from a forming substrate having a forming surface, and a first bonding step of bonding the composite integrated film to the substrate surface of a circuit board. The composite integrated film is provided on the forming substrate in advance, and has a base material thin film, one or more through holes penetrating the base material first surface and the base material second surface facing each other in the base material thin film, one or more electrodes having a planar electrode surface on the base material second surface side, and elements provided on the base material first surface. In the first bonding step, the base material second surface of the composite integrated film is bonded to the substrate surface.

[0011] Further, in the method for manufacturing a composite integrated film of the present invention, there are a forming surface forming step of forming a flat forming surface on a forming substrate, a base material thin film forming step of forming a base material thin film in close contact with the forming surface, a through hole forming step of forming one or more through holes penetrating the base material first surface and the base material second surface facing each other in the base material thin film, a step of depositing a metal material on the through holes to form an electrode surface on the base material second surface side closer to the forming surface than the base material first surface, and an electrode forming step of forming one or more electrodes provided so as to ride on the base material first surface around the through holes. It is configured to have.

[0012] In the present invention, since the electrode surface of the composite integrated film and the base material second surface form the same plane, when it is attached to a circuit board on which connection pads are formed in a planar shape, the electrode surface of the composite integrated film and the base material second surface around it, and the connection pads can be bonded by intermolecular forces, and the base material second surface and the surface of the circuit board can be bonded by intermolecular forces. Further, in the present invention, since the electrodes ride on the base material first surface of the base material thin film around the through holes, when peeling the composite integrated film from the forming substrate, it is possible to prevent the electrodes from falling out of the base material thin film, and the base material thin film and the electrodes can be peeled off from the forming substrate integrally.

Advantages of the Invention

[0013] According to the present invention, it is possible to realize a method for manufacturing a semiconductor composite device and a method for manufacturing a composite integrated film that can easily eliminate defects and increase the mounting density.

Brief Description of the Drawings

[0014]

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Mode for Carrying Out the Invention

[0015] Hereinafter, a mode for carrying out the invention (hereinafter referred to as the embodiment) will be described with reference to the drawings.

[0016] [1. Configuration of the Composite Integrated Film] As shown in the plan view in Fig. 1(A) and the cross-sectional view taken along the line A1 - A2 in Fig. 1(B), the composite integrated film according to this embodiment has a configuration in which a plurality of components are installed on one side of the base film 2. For convenience of explanation, hereinafter, in Fig. 1(A), the direction from left to right is defined as the X direction, the direction from top to bottom is defined as the Y direction, and the direction from the back to the front of the paper surface is defined as the Z direction.

[0017] The base film 2 is made of, for example, a polyimide-based resin and has insulating properties. This base film 2 is formed in a flat rectangular parallelepiped shape or a thin flat plate shape as a whole, and the length of the side along the Z direction is significantly shorter than the sides along the X direction and the Y direction, for example, 20 [μm] or less. Hereinafter, the surface on the Z direction side of the base film 2 is called the base surface 2A or the first surface of the base material, and the opposite surface is called the back surface 2B or the second surface of the base material. This back surface 2B of the base material is formed extremely flat, and its surface roughness (roughness) is 10 [nm] or less.

[0018] In addition, at three locations spaced apart from each other along the X direction at a location closer to the Y direction as a whole in the base film 2 (lower in Fig. 1(A)), base material through-holes 2V1, 2V2, and 2V3 are formed. Also, at one location at a location closer to the -Y direction as a whole in the base film 2 (upper in Fig. 1(A)), a base material through-hole 2V4 is formed. For convenience of explanation, hereinafter, the base material through-holes 2V1, 2V2, 2V3, and 2V4 are also collectively referred to as the base material through-hole 2V.

[0019] The substrate through-hole 2V as the through portion is a hole that penetrates the substrate thin film 2 in the Z direction, and corresponds to the portion equivalent to a via when the substrate thin film 2 is regarded as a circuit board. Among these, the substrate through-holes 2V1, 2V2, and 2V3 all have a shape that is nearly square when viewed from the Z direction, that is, the shape in Fig. 1(A). On the other hand, the substrate through-hole 2V4 has a rectangular shape that is long in the X direction when viewed from the Z direction. Incidentally, the substrate through-hole 2V4 is almost equivalent to the shape when the substrate through-holes 2V1, 2V2, and 2V3 are connected along the X direction.

[0020] On the substrate surface 2A of the substrate thin film 2, a red light-emitting element 11, a green light-emitting element 12, a blue light-emitting element 13, connection electrodes 21, 22, 23, and 24, interlayer insulating films 31 and 32, anode wiring materials 41, 42, and 43, and cathode wiring materials 44, 45, and 46 are provided.

[0021] The red light-emitting element 11, the green light-emitting element 12, and the blue light-emitting element 13 (hereinafter, these are collectively referred to as the light-emitting element group 10 and also simply referred to as elements) are arranged on the substrate surface 2A of the substrate thin film 2 at positions near the center in the Y direction, with a predetermined interval from each other along the X direction. The red light-emitting element 11, the green light-emitting element 12, and the blue light-emitting element 13 are all in the shape of a rectangular parallelepiped that is slightly long in the Y direction and slightly short in the X direction and the Z direction, and in the range of about 2 / 5 to about 1 / 3 on the -Y direction side, about 3 / 5 to about 2 / 3 of the portion on the Z direction side is missing.

[0022] The red light-emitting element 11 is an element made of, for example, a gallium arsenide (GaAs)-based material and constitutes a red light-emitting diode. The green light-emitting element 12 is an element made of, for example, a gallium nitride (GaN)-based material and constitutes a green light-emitting diode. The blue light-emitting element 13 is an element made of, for example, a gallium nitride (GaN)-based material and constitutes a blue light-emitting diode. That is, each light-emitting element constituting the light-emitting element group 10 is constituted by two or more different materials from each other.

[0023] In the red light-emitting element 11, among the surfaces on the Z-direction side, the portion near the center or occupying the Y-direction side serves as the anode terminal surface 11A, and the portion occupying the -Y direction side serves as the cathode terminal surface 11K. Similarly, in the green light-emitting element 12 and the blue light-emitting element 13, anode terminal surfaces 12A and 13A and cathode terminal surfaces 12K and 13K are respectively provided on the surfaces on the Z-direction side.

[0024] The connection electrode 21 is made of a metal material having conductivity such as Au, Al, Cu, Ti, and Pt. It fills the inside of the substrate through-hole 2V1 and climbs onto the substrate surface 2A side in the vicinity of its outer periphery. In other words, it is provided so as to block the substrate through-hole 2V1 and its surroundings from the Z-direction side (i.e., the substrate surface 2A side). The electrode back surface 21B, which is the surface on the -Z direction side of this connection electrode 21, is formed extremely flat like the substrate back surface 2B, and its surface roughness (roughness) is 10 [nm] or less.

[0025] The connection electrodes 22 and 23 have a configuration similar to that of the connection electrode 21. They are formed to fill the inside of the substrate through-holes 2V2 and 2V3 and climb onto the substrate surface 2A side in the vicinity of their outer peripheries. Also, for the connection electrodes 22 and 23, the electrode back surfaces 22B and 23B, which are the surfaces on the -Z direction side, are formed extremely flat like the electrode back surface 21B.

[0026] The connection electrode 24 has a configuration in which the connection electrode 21 is extended in the X direction. It is formed to fill the inside of the substrate through-hole 2V4 and climb onto the substrate surface 2A side in the vicinity of its outer periphery. Also, for the connection electrode 24, the electrode back surface 24B, which is the surface on the -Z direction side, is formed extremely flat like the electrode back surface 21B.

[0027] For convenience of explanation, hereinafter, the connection electrodes 21, 22, 23, and 24 are collectively referred to as the connection electrode 20 and also simply called electrodes. Further, hereinafter, the electrode back surfaces 21B, 22B, 23B, and 24B are collectively referred to as the electrode back surface 20B and also called the electrode surface.

[0028] Furthermore, in the composite integrated film 1, the back surface 2B of the base film 2 and the back surface 20B of the electrode form a substantially identical plane. Hereinafter, this plane is also referred to as the film back surface 1B. Specifically, in the composite integrated film 1, for example, regarding the connection electrode 24, as shown in FIG. 1(C) which is an enlarged view of a part B1 that is a part of FIG. 1(B), the distance in the Z direction (i.e., the normal direction of the back surface 2B of the base film) between the back surface 2B of the base film and the back surface 24B of the electrode, that is, the film step LD which is the "height of the step" is extremely small. Specifically, in the composite integrated film 1, this film step LD is 1 / 1000 or less compared to the shorter one of the distance L2X which is the length of the shortest side on the XY plane in the outer shape of the back surface 2B of the base film, that is, the side length along the X direction and the distance L2Y which is the side length along the Y direction.

[0029] Both the interlayer insulating films 31 and 32 are made of insulating materials. The interlayer insulating film 31 is provided in a range extending from a part on the Y - direction side to the Z - direction side of the surfaces on the Y - direction side of the red light - emitting element 11, the green light - emitting element 12, and the blue light - emitting element 13. Also, the interlayer insulating film 32 is provided in a range extending from a part on the - Y - direction side to the Z - direction side of the surfaces on the - Y - direction side of the red light - emitting element 11, the green light - emitting element 12, and the blue light - emitting element 13.

[0030] The anode wiring material 41 is made of a conductive metal material such as Au, Al, Cu, Ti, and Pt. The anode wiring material 41 is formed to continuously cover the surfaces of the red light - emitting element 11, the base film 2, and the connection electrode 21 generally along the Y direction from a part on the Y - direction side of the surface on the Z - direction side of the red light - emitting element 11 to a part closer to the - Y - direction on the surface on the Z - direction side of the connection electrode 21. That is, the anode wiring material 41 electrically connects the anode terminal surface 11A of the red light - emitting element 11 and the back surface 21B of the connection electrode 21.

[0031] The cathode wiring member 44 is made of a conductive metal material, similar to the anode wiring member 41. This cathode wiring member 44 is formed so as to continuously cover the surfaces of the red light-emitting element 11, the base film 2, and the connection electrode 24 along substantially the Y direction from a part on the -Y direction side of the surface on the Z direction side of the red light-emitting element 11 to a part on the -X direction side and Y direction side of the surface on the Z direction side of the connection electrode 24. That is, the cathode wiring member 44 electrically connects the cathode terminal surface 11K of the red light-emitting element 11 and the electrode back surface 24B of the connection electrode 24.

[0032] The anode wiring member 42 and the cathode wiring member 45 have configurations similar to those of the anode wiring member 41 and the cathode wiring member 44, respectively, and are connected to the green light-emitting element 12. That is, the anode wiring member 42 electrically connects the anode terminal surface 12A of the green light-emitting element 12 and the electrode back surface 22B of the connection electrode 22. Also, the cathode wiring member 45 electrically connects the cathode terminal surface 12K of the green light-emitting element 12 and the electrode back surface 24B of the connection electrode 24.

[0033] The anode wiring member 43 and the cathode wiring member 46 have configurations similar to those of the anode wiring member 41 and the cathode wiring member 44, respectively, and are connected to the blue light-emitting element 13. That is, the anode wiring member 43 electrically connects the anode terminal surface 13A of the blue light-emitting element 13 and the electrode back surface 23B of the connection electrode 23. Also, the cathode wiring member 46 electrically connects the cathode terminal surface 13K of the blue light-emitting element 13 and the electrode back surface 24B of the connection electrode 24.

[0034] For convenience of explanation, hereinafter, the anode wiring members 41, 42, and 43, and the cathode wiring members 44, 45, and 46 are also collectively referred to as the wiring member group 40.

[0035] Thus, in the composite integrated film 1, a light-emitting element group 10 for three colors is provided on the substrate surface 2A side of the base film 2, and the electrode back surfaces 20B of the connection electrodes 20 electrically connected thereto are exposed on the substrate back surface 2B side of the base film 2 and form a plane substantially the same as the substrate back surface 2B.

[0036] [Manufacture of Composite Integrated Film] Next, the manufacture of the composite integrated film 1 will be described. As shown by the flowchart in FIG. 2 and the schematic cross-sectional view in FIG. 3, the composite integrated film 1 is configured step by step on the formation substrate 51 according to various manufacturing processes similar to those for manufacturing a general semiconductor by a predetermined manufacturing apparatus 50. Incidentally, the formation substrate 51 is made of silicon like a so-called wafer, and an extremely flat formation surface 52 is formed on its surface. The surface roughness of this formation surface 52 is 10 [nm] or less.

[0037] Specifically, when the manufacturing apparatus 50 starts the composite integrated film manufacturing procedure RT1 (FIG. 2), it moves to the first step SP1 and, as shown in FIG. 3(B), forms a thin film layer 53 made of a polyimide-based resin on the formation surface 52 of the formation substrate 51 and then moves to the next step SP2. Specifically, the manufacturing apparatus 50 forms a thin film layer 53 having a thickness of, for example, 20 [μm] or less by using, for example, a spin coater (not shown). At this time, since the lower surface of the thin film layer 53 is formed in a state of being in close contact with the formation surface 52, it becomes extremely flat.

[0038] In step SP2, the manufacturing apparatus 50 performs a patterning process by a method such as lithography as shown in FIG. 3(C), removes unnecessary portions from the thin film layer 53, thereby forming the base material thin film 2, and then moves to the next step SP3. At this time, base material through holes 2V (base material through holes 2V1 and 2V4, etc.) are also formed in the base material thin film 2.

[0039] In step SP3, as shown in FIG. 3(D), the manufacturing apparatus 50 deposits a metal material by a method such as lithography and vapor deposition within a range that respectively covers the base material through-holes 2V, thereby forming connection electrodes 20 (connection electrodes 21, 24, etc.), and then proceeds to the next step SP4. At this time, the lower surface of the connection electrode 20 is formed in a state of being in close contact with the formation surface 52, similar to the case of the thin film layer 53. For this reason, the electrode back surface 20B (electrode back surfaces 21B, 24B, etc.), which is the lower surface of the connection electrode 20, becomes extremely flat and is positioned substantially on the same plane as the lower surface of the thin film layer 53, that is, the base material back surface 2B of the base material thin film 2.

[0040] In step SP4, as shown in FIG. 3(E), the manufacturing apparatus 50 transfers a light-emitting element group 10 (red light-emitting element 11, etc.) manufactured by a predetermined LED manufacturing apparatus (not shown) to a predetermined location on the base material surface 2A of the base material thin film 2, and then proceeds to the next step SP5. At this time, the manufacturing apparatus 50 can utilize a well-known transfer technique as disclosed in, for example, Patent Document 1.

[0041] In step SP5, as shown in FIG. 3(F), the manufacturing apparatus 50 forms interlayer insulating films 31 and 32 from a predetermined insulating material by a method such as photolithography and vapor deposition, and then forms a wiring material group 40 (anode wiring material 41, etc. and cathode wiring material 44, etc.) from a predetermined metal material. Thereafter, the manufacturing apparatus 50 proceeds to the next step SP6 and ends the composite integrated film manufacturing procedure RT1. The composite integrated film 1 thus manufactured is in a state where the base material back surface 2B and the electrode back surface 20B are in contact with the surface of the formation substrate 51 (i.e., the formation surface 52).

[0042] Incidentally, the manufacturing apparatus 50 manufactures a plurality of composite integrated films 1 together based on a single forming substrate 51 (corresponding to a so-called silicon wafer), in the same manner as when manufacturing a general semiconductor element. Specifically, as shown in a schematic plan view in FIG. 4 and a schematic cross-sectional view in FIG. 5, the manufacturing apparatus 50 simultaneously or sequentially performs each process for manufacturing a plurality of composite integrated films 1 on the forming substrate 51, thereby manufacturing the plurality of composite integrated films 1 in a state where they are aligned in a grid pattern, for example.

[0043] [3. Configuration of LED Display Device] Next, an LED display device 60 into which a plurality of composite integrated films 1 are incorporated will be described. As shown in a schematic perspective view in FIG. 6, the LED display device 60 as a semiconductor composite device includes an LED display display unit 61, a frame 62, a heat dissipation member 63, a connection cable 64, a connection terminal unit 65, a display driver 66, and the like. Incidentally, the LED display device 60 is also called a micro LED display, and is a display device in which a set of LED elements of red, green, and blue are associated with one pixel.

[0044] The LED display display unit 61 has a configuration in which a large number of composite integrated films 1 (FIG. 1) are mounted so as to be arranged in a grid pattern within a display area set on the surface on the Z-direction side of a flat circuit board (details will be described later). The frame 62 is formed in a rectangular frame shape from, for example, a predetermined steel material or the like, and is attached on the Z-direction side of the LED display display unit 61 so as to surround the outside of the display area.

[0045] The heat radiating member 63 is formed as a flat rectangular parallelepiped as a whole from a metal material having relatively high thermal conductivity such as aluminum. This heat radiating member 63 is installed so as to be in contact with the LED display section 61 on the -Z direction side of the LED display section 61, that is, on the opposite side of the surface on which an image or the like is displayed. The connection cable 64 is electrically connected to a predetermined control device (not shown) via the connection terminal section 65, and transmits the image signal supplied from the control device and supplies it to the display driver 66.

[0046] The display driver 66 as a drive circuit is electrically connected to the connection cable 64 and the LED display section 61, respectively. This display driver 66 generates drive signals for red, green, and blue respectively based on, for example, the image signal supplied via the connection cable 64, and supplies a drive current based on these drive signals to the LED display section 61. As a result, the LED display device 60 can display an image based on the image signal supplied from a control device (not shown) or the like in the display area of the LED display section 61.

[0047] Next, the configuration of the LED display section 61 will be described. As shown in a partial perspective view in FIG. 7 and a schematic cross-sectional view in FIG. 8, the LED display section 61 has a configuration in which the composite integrated film 1 is attached to the surface on the Z direction side of the circuit board 70. Incidentally, FIG. 7 shows an extraction of one composite integrated film 1 and a part of the circuit board 70 corresponding thereto in the LED display section 61. Further, FIG. 7 shows a state before the composite integrated film 1 is attached to the circuit board 70. On the other hand, FIG. 8 is a schematic cross-sectional view corresponding to FIG. 1(B).

[0048] The circuit board 70 is configured such that the surfaces on the -Z direction side and the opposite side of the base material portion 71 are respectively covered by the insulating layers 72 and 73. The base material portion 71 is, for example, a so-called glass epoxy resin, that is, a structure in which glass fibers are impregnated with an epoxy resin and thermally cured, and has sufficient strength, insulation properties, etc. The insulating layers 72 and 73 are, for example, thermosetting epoxy resins and have sufficient insulation properties.

[0049] Also, in the circuit board 70, a plurality of wiring materials are provided, such as vertical wiring materials 74 arranged mainly along the Y direction on the front and back surfaces of the base material portion 71, horizontal row common wiring materials 75 arranged mainly along the X direction, and internal wiring materials 76 arranged so as to penetrate the inside of the base material portion 71. Among these, the vertical wiring materials 74 and the horizontal row common wiring materials 75 form a generally grid-like wiring pattern. These wiring materials are made of a conductive material and are electrically connected to each other as appropriate. For convenience of explanation, hereinafter, the vertical wiring materials 74 and the horizontal row common wiring materials 75 will also be referred to as the first-direction wiring and the second-direction wiring, respectively.

[0050] Also, in the circuit board 70, in a region corresponding to one composite integrated film 1 (hereinafter referred to as the attachment region 77), three vertical wiring connection pads 81, 82, and 83 and one horizontal row common wiring connection pad 84 are provided. The vertical wiring connection pads 81, 82, and 83 are made of a conductive material, and pad surfaces 81A, 82A, and 83A are exposed on the surface on the Z direction side of the circuit board 70 (hereinafter referred to as the board surface 70A), and are also electrically connected to the vertical wiring material 74 inside the circuit board 70. The horizontal row common wiring connection pad 84 is made of a conductive material, and the pad surface 84A is exposed on the board surface 70A of the circuit board 70, and is also electrically connected to the horizontal row common wiring material 75 inside the circuit board 70.

[0051] For convenience of explanation, hereinafter, the vertical wiring connection pads 81, 82, and 83 and the horizontal row common wiring connection pad 84 will be collectively referred to as the connection pad 80, and the pad surfaces 81A, 82A, 83A, and 84A will be collectively referred to as the pad surface 80A.

[0052] Incidentally, in the circuit board 70, the positions of the pad surfaces 81A, 82A, 83A, and 84A in the attachment region 77 are in a mirror image relationship with the positions of the electrode back surfaces 21B, 22B, 23B, and 24B on the film back surface 1B of the composite integrated film 1. Also, in the circuit board 70, the sizes of the pad surfaces 81A, 82A, 83A, and 84A in the attachment region 77 are equal to or slightly larger than the sizes of the electrode back surfaces 21B, 22B, 23B, and 24B on the film back surface 1B of the composite integrated film 1.

[0053] Furthermore, in the circuit board 70, the board surface 70A is formed in an extremely flat planar shape. That is, in the circuit board 70, both the insulating surface 73A, which is the surface on the Z-direction side of the insulating layer 73, and the pad surface 80A are extremely flat, and both are parallel planes to each other. Furthermore, the distance (i.e., step) in the Z direction between the two is also extremely small.

[0054] [4. Manufacture of Circuit Board and LED Display Section] Next, the manufacture of the circuit board 70 and the LED display section 61 will be described respectively. First, the circuit board 70 is manufactured through a plurality of processes by a circuit board manufacturing apparatus 90 as shown by a plurality of schematic diagrams in stages in FIG. 9, for example. This circuit board manufacturing apparatus 90 is adapted to use well-known semiconductor manufacturing technologies, such as photolithography, vapor deposition, masking, etching, and other technologies, or various technologies related to the manufacture of circuit boards.

[0055] Specifically, as shown in FIG. 9(A), the circuit board manufacturing apparatus 90 first arranges each wiring material on the surface and inside of the base material portion 71 by means such as etching, and makes the respective surfaces of the base material portion 71 generally covered with the insulating layers 72 and 73. However, at this time, in the circuit board 70, at the location where the connection pads 80 are provided, a hole portion 73H is formed in a state where each wiring material is not covered by the insulating layer 73 and is exposed.

[0056] Next, as shown in FIG. 9(B), the circuit board manufacturing apparatus 90 fills the inside of the hole portion 73H with a material such as a conductive metal by depositing the material on the -Z direction side of the base material portion 71 in the hole portion 73H and its periphery.

[0057] Furthermore, the circuit board manufacturing apparatus 90 performs a process such as Chemical Mechanical Polishing so that the polishing line PL shown in FIG. 9(B) becomes the surface on the -Z direction side. As a result, as shown in FIG. 9(C), the circuit board manufacturing apparatus 90 can manufacture a circuit board 70 in which the substrate surface 70A is extremely flat, that is, both the insulating surface 73A and the pad surface 80A are extremely flat, and the step between the two is extremely small. Specifically, in the circuit board 70, the surface roughness (roughness) of both the insulating surface 73A and the pad surface 80A is 10 [nm] or less. Also, in the circuit board 70, the distance in the Z direction (that is, the normal direction of the insulating surface 73A) of the insulating surface 73A and the pad surface 80A, that is, the substrate step which is the "step height" is 1 / 1000 or less compared to the shorter one of the distance L2X and the distance L2Y in the composite integrated film 1 (FIG. 1(A)).

[0058] Incidentally, the circuit board 70 is provided with the same number of attachment regions 77 as the number of pixels constituting the image. For example, if the circuit board 70 has a resolution corresponding to so-called 4k (3840 × 2160 pixels), the attachment regions 77 (FIG. 7) are arranged in a grid pattern of 3840 in the X direction and 2160 in the Y direction.

[0059] Next, the manufacturing of the LED display unit 61 will be described. As shown in the flowchart of FIG. 10 and the schematic cross-sectional view of FIG. 11, the LED display unit 61 is manufactured step by step through a plurality of processes by a predetermined display manufacturing apparatus 100.

[0060] Incidentally, in the display manufacturing apparatus 100, a circuit board 70 (Figs. 7 and 8) is installed at a predetermined circuit board installation location with the surface of the insulating layer 73 facing upward, and a forming substrate 51 (Figs. 4 and 5) is installed at a predetermined forming substrate installation location with the surface of the forming surface 52 facing upward.

[0061] When the display manufacturing apparatus 100 starts the LED display unit manufacturing procedure RT2 (Fig. 10), it moves to the first step SP21. As shown in Fig. 11(A), the transfer stamp 101 picks up one composite integrated film 1 from the forming substrate 51 and then moves to the next step SP22.

[0062] In step SP22, as shown in Fig. 11(B), the display manufacturing apparatus 100 attaches the composite integrated film 1 to the circuit board 70 and then moves to the next step SP23. Specifically, the display manufacturing apparatus 100 first moves the transfer stamp 101 that has picked up one composite integrated film 1 above (in the Z - direction side) the attachment area 77 on the circuit board 70 where the composite integrated film 1 has not yet been attached. As a result, as shown in Fig. 7, the back surface of the base material 2B and the back surface of the electrode 20B are respectively opposed to the insulating surface 73A and the pad surface 80A of the circuit board 70.

[0063] Subsequently, the display manufacturing apparatus 100 moves the transfer stamp 101 downward. As shown in Fig. 8, the film back surface 1B of the composite integrated film 1 is brought into contact with the substrate surface 70A of the circuit board 70, and the back surface of the base material 2B and the back surface of the electrode 20B are respectively brought into contact with the insulating surface 73A and the pad surface 80A.

[0064] Furthermore, the display manufacturing apparatus 100 applies a predetermined pressure (pressurizes) to the composite integrated film 1 in the - Z direction (i.e., downward) by the transfer stamp 101. As a result, the composite integrated film 1 causes intermolecular forces to act between the back surface of the base material 2B and the back surface of the electrode 20B and the insulating surface 73A and the pad surface 80A, respectively, and is attached to the circuit board 70 by the intermolecular forces.

[0065] At this time, the back surface 20B of the electrode is electrically connected by bonding to the pad surface 80A by intermolecular force. That is, the connection electrodes 21, 22, and 23 are electrically connected to the vertical wiring connection pads 81, 82, and 83, respectively. Also, the connection electrode 24 is electrically connected to the horizontal common wiring connection pad 84.

[0066] In step SP23, the display manufacturing apparatus 100 determines whether or not the composite integrated film 1 has been pasted on all the pasting regions 77 on the circuit board 70. If a negative result is obtained here, the display manufacturing apparatus 100 returns to step SP21 and repeats a series of processes to sequentially paste the composite integrated film 1 on the remaining pasting regions 77.

[0067] On the other hand, if an affirmative result is obtained in step SP23, this indicates that the composite integrated film 1 has been completely pasted on all the pasting regions 77 on the circuit board 70. At this time, the display manufacturing apparatus 100 moves to the next step SP24 and, as shown in FIG. 11(C), connects the inspection control unit 103 to the circuit board 70 and supplies a predetermined image signal to the circuit board 70 to drive each composite integrated film 1, and then moves to the next step SP25.

[0068] In step SP25, the display manufacturing apparatus 100 inspects the characteristics of each composite integrated film 1 and moves to the next step SP26. Specifically, the display manufacturing apparatus 100 arranges the light receiving unit 104 at a position facing the circuit board 70, detects the amount of received light and the like obtained from each composite integrated film 1, and based on this, acquires the characteristics of each composite integrated film 1.

[0069] In step SP26, the display manufacturing apparatus 100 determines whether there are locations where normal characteristics could not be obtained, that is, abnormal locations (also referred to as defective locations), based on the characteristics obtained from each of the composite integrated films 1. Specifically, the display manufacturing apparatus 100, for example, regards the magnitude of the amount of light obtained with respect to the current supplied to the composite integrated film 1 as a characteristic, and also stores in advance a normal range for this characteristic. Then, the display manufacturing apparatus 100 determines the locations of the composite integrated film 1 with characteristics outside this normal range as abnormal locations.

[0070] If an affirmative result is obtained here, this indicates that repair work should be performed on the abnormal locations. Specifically, it means that the composite integrated film 1 at the abnormal locations should be replaced (i.e., exchanged). At this time, the display manufacturing apparatus 100 proceeds to the next step SP27.

[0071] In step SP27, the display manufacturing apparatus 100 peels the composite integrated film 1 at the abnormal locations from the circuit board 70 and proceeds to the next step SP28. Specifically, as shown in Fig. 11(D), the display manufacturing apparatus 100 first brings the peeling head 105 close to the abnormal locations and discharges a predetermined solvent onto the abnormal locations, thereby reducing the bonding force of the composite integrated film 1 to the circuit board 70. Subsequently, as shown in Fig. 11(E), the display manufacturing apparatus 100 moves the transfer stamp 101 to the abnormal locations and moves it in the -Z direction, adsorbs the composite integrated film 1 and moves it in the Z direction, thereby peeling the composite integrated film 1 from the circuit board 70.

[0072] At this time, although the bonding by intermolecular force between the substrate surface 70A of the circuit board 70 and the film back surface 1B of the composite integrated film 1 is released, the circuit board 70 is hardly damaged and maintains a good physical shape. That is, the circuit board 70 can maintain an extremely flat state at the abnormal locations, whether on the insulating surface 73A or the pad surface 80A. Thereafter, the display manufacturing apparatus 100 conveys the peeled composite integrated film 1 to a predetermined abnormal film integration location.

[0073] In step SP28, the display manufacturing apparatus 100 attaches a new composite integrated film 1 to the abnormal location of the circuit board 70, that is, the location where the composite integrated film 1 has peeled off, and moves to the next step SP29. Specifically, the display manufacturing apparatus 100 performs the same processes as in steps SP21 and SP22 to attach a new composite integrated film 1 to the abnormal location of the circuit board 70, and bonds the electrode back surface 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 by intermolecular force.

[0074] In step SP29, the display manufacturing apparatus 100 determines whether the repair work has been completed for all the detected abnormal locations. If a negative result is obtained here, the display manufacturing apparatus 100 returns to step SP27 and repeats a series of processes to replace (exchange) the composite integrated film 1 for the remaining abnormal locations as well.

[0075] On the other hand, if an affirmative result is obtained in step SP29, this indicates that since the replacement process of the composite integrated film 1 has been completed at all the abnormal locations, the characteristics should be inspected again. At this time, the display manufacturing apparatus 100 returns to step SP24 and repeats a series of processes. Incidentally, when the display manufacturing apparatus 100 performs the process of step SP25 for the second time and later, it inspects the characteristics only for the abnormal locations of the previous time.

[0076] On the other hand, if a negative result is obtained in step SP26, this indicates that the characteristics of all the composite integrated films 1 attached to the circuit board 70 are within the normal range and can operate normally as the LED display unit 61, that is, the LED display unit 61 is completed. At this time, the display manufacturing apparatus 100 moves to the next step SP30.

[0077] In step SP30, the display manufacturing apparatus 100 finishes the manufacturing procedure RT2 of the LED display unit. Incidentally, the display manufacturing apparatus 100 can sequentially manufacture the LED display units 61 by repeatedly executing this manufacturing procedure RT2 of the LED display unit.

[0078] [5. Effects, etc.] In the above configuration, the composite integrated film 1 according to the present embodiment forms the film back surface 1B, which is composed of the substrate back surface 2B and the electrode back surface 20B, extremely flat. Specifically, in the composite integrated film 1, the substrate back surface 2B and the electrode back surface 20B are formed in a planar shape parallel to each other, the surface roughness of each is set to 10 [nm] or less, and further, the step, which is the distance in the Z direction between the two, is set to 1 / 1000 or less of the short side on the XY plane of the outer shape of the substrate back surface 2B.

[0079] Also, the circuit board 70 according to the present embodiment forms the board surface 70A, which is composed of the insulating surface 73A and the pad surface 80A, extremely flat. Specifically, in the circuit board 70, by performing chemical mechanical polishing (FIG. 9(C)), the insulating surface 73A and the pad surface 80A are formed in a planar shape parallel to each other, the surface roughness of each is set to 10 [nm] or less, and the distance in the Z direction (i.e., the step) between the two is also made extremely small so as to form a substantially single flat plane.

[0080] Accordingly, in the LED display section 61 according to the present embodiment, by bringing the composite integrated film 1 into contact with the attachment area 77 of the circuit board 70 and applying a predetermined pressure, the electrode back surface 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 can be bonded by intermolecular forces and physically and electrically connected. In other words, the LED display section 61 can electrically connect the two simply by attaching the composite integrated film 1 to the circuit board 70, without performing wiring formation processing using bonding wires or lithography, and annealing processing for enhancing the contact property between the semiconductor surface and the wiring material. Therefore, the LED display section 61 does not need to apply high temperature to the circuit board 70 and can avoid causing significant damage.

[0081] At this time, in the LED display section 61, the boundary line between the base material back surface 2B and the electrode back surface 20B in the composite integrated film 1 may not necessarily coincide with the boundary line between the insulating surface 73A and the pad surface 80A in the circuit board 70. That is, in the LED display section 61, for example, the boundary line between the base material back surface 2B and the electrode back surface 20B may come into contact with the pad surface 80A. However, in the composite integrated film 1, the base material back surface 2B is extremely flat like the electrode back surface 20B, and the step difference between the two is extremely small. Therefore, in the LED display section 61, the bonding by intermolecular forces between the pad surface 80A and the electrode back surface 20B is not inhibited by the base material back surface 2B. On the contrary, intermolecular forces can be made to act between the pad surface 80A and the base material back surface 2B, and the bonding force between the composite integrated film 1 and the circuit board 70 can be enhanced.

[0082] Also, in the LED display section 61, intermolecular forces can be made to act between the base material back surface 2B of the composite integrated film 1 and other locations on the circuit board 70 except for the pad surface 80A, that is, on the insulating surface 73A. Thereby, in the LED display section 61, the state where the composite integrated film 1 is attached to the circuit board 70 can be maintained well.

[0083] Incidentally, when bonding two objects together, an adhesive may be used. Some adhesives exhibit an adhesive effect by utilizing intermolecular forces. Generally, an adhesive is in a liquid state and is cured in a state where it is applied to and sandwiched between the bonding surfaces of the two objects to achieve a bonded state. When using such an adhesive, to separate the once-bonded objects from each other, it is necessary to physically break the cured adhesive, and there is a risk of damaging the objects at that time.

[0084] Also, for example, in a place where an electrical connection is required, such as the connection between the electrodes of a circuit board and the electrodes of an element, in many cases, by bump connection, an alloy is formed by eutectic between the electrodes. In this case, for example, it is possible to eliminate the bump connection by a laser removal method or the like, but it will cause at least some damage to the electrodes of the circuit board.

[0085] In contrast, the LED display section 61 according to the present embodiment does not use such an adhesive, but directly abuts the film back surface 1B of the composite integrated film 1 against the substrate surface 70A of the circuit board 70, and directly applies intermolecular forces between the two to realize physical and electrical connections. Therefore, in the present embodiment, when an abnormal location (defective location) is detected in the manufacturing process of the LED display section 61, the composite integrated film 1 can be extremely easily peeled off with almost no damage to the circuit board 70, and a new composite integrated film 1 can be attached to the same location (FIGS. 10 and 11).

[0086] Furthermore, in the manufacturing process of the LED display unit 61, if no abnormal portion is detected, it becomes a finished product as it is (FIG. 10, step SP26). In other words, in the manufacturing process of the LED display unit 61, by bonding the composite integrated film 1 to the circuit board 70 by intermolecular force, the two are electrically connected and the bonded state can be maintained to a certain extent. In this state, the LED display unit 61 can supply current to each composite integrated film 1 to conduct an operation test and can replace each composite integrated film 1 with almost no damage to the circuit board 70. Also, for the portions where it is confirmed that there are no abnormal portions, since this temporarily fixed state has sufficient bonding strength, the LED display unit 61 can be in a completed state as it is, that is, a state without defective portions and with each composite integrated film 1 fixed with sufficient strength. As a result, the LED display unit 61 can significantly reduce the occurrence rate of defective products and significantly increase the proportion of non-defective products (so-called yield).

[0087] Also, in the LED display unit 61, if an abnormal portion is detected in the manufacturing process, the bonding by intermolecular force of the composite integrated film 1 at the abnormal portion is released and peeled off, and a new composite integrated film 1 is attached to the same portion, thereby eliminating the defect. Therefore, in the LED display unit 61, there is no need to provide redundant circuits or redundant elements as disclosed in Patent Document 1 and Patent Document 2, and the interval between the attachment regions 77 on the circuit board 70 can be minimized. As a result, in the LED display unit 61 and the LED display device 60 incorporating the same, the integration degree of display pixels, that is, the mounting density and pixel density, can be increased, and a high-definition image can be displayed.

[0088] By the way, regarding the composite integrated film 1, for example, a circuit for detecting defects or pads for abutting probes may be provided on the composite integrated film, and inspections may be carried out at a stage before being attached to the circuit board 70. However, in this method, since the area of the composite integrated film increases to provide circuits, pads, etc., the pixel density when attached to the LED display unit 61 will decrease. Also, in this method, since it is necessary to accurately abut the tester needle, etc. against the pads, etc. during inspection, there is a possibility of a significant increase in the number of man-hours.

[0089] In contrast, in the present embodiment, inspections are carried out in a state where the composite integrated film 1 is attached to the circuit board 70 used as an actual product, and since there is no replacement if it is normal, it can be manufactured extremely efficiently. Also, in the present embodiment, since there is no need to provide extra circuits, probes, etc., the area of the base film 2, that is, the area required for one pixel, can be minimized, and the pixel density can be increased in a state where it is attached to the LED display unit 61.

[0090] Furthermore, the composite integrated film 1 is manufactured in its manufacturing process such that each part is sequentially laminated on the extremely flat forming surface 52 (Figs. 2 and 3). For this reason, the composite integrated film 1 does not require a process for flattening the film back surface 1B again, and can be easily manufactured so that the film back surface 1B is in an extremely flat state, that is, both the base material back surface 2B and the electrode back surface 20B are extremely flat and the step difference between the two is extremely small.

[0091] According to the above configuration, the composite integrated film 1 forms an extremely flat film back surface 1B composed of the substrate back surface 2B and the electrode back surface 20B. Also, the circuit board 70 forms an extremely flat board surface 70A composed of the insulating surface 73A and the pad surface 80A. Therefore, the LED display section 61 can operate the composite integrated film 1 in a state where the electrode back surface 20B of the composite integrated film 1 and the pad surface 80A of the circuit board 70 are bonded by intermolecular forces and physically and electrically connected, and can inspect the characteristics. Also, at abnormal locations, the composite integrated film 1 can be easily replaced. As a result, the LED display section 61 can significantly increase the yield while increasing the mounting density.

[0092] [6. Other Embodiments] In the above-described embodiment, in the composite integrated film 1, the case where the connection electrodes 20 (connection electrodes 21, etc.) fill the entire area of the substrate through-holes 2V (substrate through-holes 2V1, etc.) provided in the substrate thin film 2 has been described (FIG. 1). However, the present invention is not limited to this. For example, like the composite integrated film 201 shown in FIGS. 12(A) and (B) corresponding to FIGS. 1(A) and (B) respectively, connection electrodes 221, 222, and 223 having a shape that fills only a part of the substrate through-holes 2V1, 2V2, and 2V3 may be formed. Incidentally, FIG. 12(B) shows a D1-D2 cross-section in FIG. 12(A). In short, as long as a part of the connection electrodes 21, etc. or the anode wiring member 41, etc. rides on the substrate thin film 2, the red light-emitting element 11, etc. from the inside of the substrate through-holes 2V1, etc., and the electrode back surface 21B, etc. to the anode terminal surface 11A, etc. are electrically connected. Moreover, when the composite integrated film 1 is attached to the circuit board 70, the electrode back surface 21B, etc., which is the -Z direction surface of the connection electrodes 21, etc., forms a flat and substantially the same plane as the substrate back surface 2B, and has a sufficient area. Thereby, as long as the connection electrodes 21, etc. can be joined to the vertical column wiring connection pads 81, etc. of the circuit board 70 (FIG. 7, etc.) by intermolecular forces of sufficient magnitude and maintain an electrically connected state between the two. The same applies to the connection electrode 24.

[0093] In the above-described embodiments, in the composite integrated film 1, the case where the base material through-holes 2V1, 2V2, and 2V3 are formed as independent through-holes in the base material thin film 2 has been described (FIG. 1). However, the present invention is not limited to this. For example, like the composite integrated film 301 shown in FIG. 13 corresponding to FIG. 1(A), a single through-hole 302V1 that is long in the X direction is provided in the base material thin film 302, and connection electrodes 321, 322, and 323 that fill a part of this through-hole 302V1 may be provided in a state of being spaced apart from each other in the X direction. In this case, the surfaces in the -Z direction of the connection electrodes 321, 322, and 323 may be flat and have a sufficient area, and they may be electrically isolated from each other.

[0094] Furthermore, in the above-described embodiments, in the composite integrated film 1, the case where the base material through-holes 2V1, 2V2, and 2V3 surrounded by the periphery are provided inside the base material thin film 2, and the connection electrodes 21, 22, and 23 that fill these are provided has been described (FIG. 1). However, the present invention is not limited to this. For example, like the composite integrated films 401 shown in FIGS. 14(A) and (B) corresponding to FIGS. 1(A) and (B), in the base material thin film 402, instead of the base material through-holes 2V1, 2V2, and 2V3, cutout portions 402C1, 402C2, and 402C3 that are cut out from the outer periphery to the inside may be provided. In this case, connection electrodes 421, 422, and 423 having a shape that fills only a part of the cutout portions 402C1, 402C2, and 402C3 can be provided respectively. Incidentally, FIG. 14(B) shows the cross-section taken along E1 - E2 in FIG. 14(A). The same applies to the connection electrode 24.

[0095] Furthermore, in the above-described embodiments, the case where connection pads 80 (vertical row wiring connection pads 81, 82, and 83 and horizontal row common wiring connection pads 84) are provided at positions corresponding to the connection electrodes 20 of the composite integrated film 1 on the substrate surface 70A of the circuit board 70 has been described. However, the present invention is not limited to this. For example, like the circuit board 570 shown in FIGS. 15 and 16 corresponding to FIGS. 7 and 8, in addition to the connection pads 80, sub-connection pads 591, 592, and 593 made of a conductive material may be provided at positions facing the back surface 2B of the base material of the composite integrated film 1. These sub-connection pads 591, etc. can contribute to maintaining the state where the composite integrated film 1 is attached to the circuit board 70 because the respective pad surfaces 591A, 592A, and 593A are joined to the back surface 2B of the base material of the composite integrated film 1 (that is, the portion other than the electrode back surface 20B) by intermolecular forces. Also, since the sub-connection pads 591, etc. are appropriately connected to the vertical row wiring members 74, etc. inside the circuit board 570, the heat generated in the composite integrated film 1 can be efficiently transmitted into the circuit board 570, that is, it can function as a heat dissipation member. Furthermore, since the sub-connection pads 591, etc. are appropriately connected to the vertical row wiring members 74, etc., for example, in the inspection of the circuit board 70, etc., it is also possible to bring a probe connected to a predetermined inspection jig into contact and use it for measuring and testing electrical characteristics.

[0096] Furthermore, in the above-described embodiments, the case where the base material thin film 2 is rectangular when viewed from the Z direction has been described. However, the present invention is not limited to this, and the base material thin film 2 may have various shapes such as a triangle, a hexagon, an octagon, or a circle. For example, it can have various shapes according to various purposes, such as a shape that can be efficiently manufactured on the formation substrate 51 during the manufacture of the composite integrated film 1, or a shape that can efficiently arrange a plurality of composite integrated films 1 on the circuit board 70.

[0097] Furthermore, in the above-described embodiment, the case where one red light-emitting element 11, one green light-emitting element 12, and one blue light-emitting element 13 are provided for one base material thin film 2 so that one composite integrated film 1 corresponds to one pixel has been described. However, the present invention is not limited to this. For example, for a base material thin film having a size and shape corresponding to two base material thin films 2, two red light-emitting elements 11, two green light-emitting elements 12, and two blue light-emitting elements 13 are provided so as to correspond to two pixels. That is, one composite integrated film may correspond to a plurality of pixels.

[0098] Furthermore, in the above-described embodiment, the case where three types of light-emitting elements (red light-emitting element 11, green light-emitting element 12, and blue light-emitting element 13) that emit light of three different colors (red, green, and blue) are provided on the base material surface 2A of the base material thin film 2 in the composite integrated film 1 has been described (FIG. 1). However, the present invention is not limited to this, and two or less or four or more types of light-emitting elements that emit light of different colors or the same color may be provided. Also, not limited to light-emitting elements, for example, electronic elements having various functions such as light-receiving elements may be provided. Furthermore, a plurality of types of elements may be provided in combination to constitute various devices using these. For example, an image sensor device may be configured by providing a pn junction photodiode on the base material surface 2A instead of the LED display device 60. Alternatively, for example, a contact area sensor device (so-called touch panel) may be configured by providing a capacitance device or the like on the base material surface 2A instead of the LED display device 60. Also, in these cases, the number of connection electrodes connected to each element is not limited to two, and may be three or more.

[0099] Furthermore, in the above-described embodiments, for example, regarding the red light-emitting element 11, the case where the anode wiring member 41 is directly connected to the anode terminal surface 11A and the connection electrode 21, respectively, and the cathode wiring member 44 is directly connected to the cathode terminal surface 11K and the connection electrode 24, respectively, was described (FIG. 1). However, the present invention is not limited to this. For example, a contact electrode may be provided between the anode terminal surface 11A and the anode wiring member 41, or between the cathode terminal surface 11K and the cathode wiring member 44. Thereby, the connection portion between the semiconductor and the metal becomes a so-called Schottky connection, and the occurrence of a non-linear resistance can be avoided. The same applies to the green light-emitting element 12 and the blue light-emitting element 13.

[0100] Furthermore, in the above-described embodiments, the case where the light-emitting element group 10, the connection electrodes 20, the interlayer insulating films 31 and 32, and the wiring member group 40 are provided on the base film 2 in the composite integrated film 1 was described (FIG. 1). However, the present invention is not limited to this. For example, various components and materials such as a surface protective film, a reflector, a heat dissipation material, or a combination thereof may be provided on the composite integrated film.

[0101] Furthermore, in the above-described embodiments, the case where the forming substrate 51 having an extremely flat forming surface 52 is used in the manufacturing process of the composite integrated film 1 was described (FIG. 3(A)). However, the present invention is not limited to this. For example, a forming substrate having a planarizing layer or a forming substrate that has been subjected to processing such as polishing may be used.

[0102] Furthermore, in the above-described embodiments, the case where the light-emitting element group 10 manufactured by a predetermined LED manufacturing apparatus or the like is transferred onto the base surface 2A of the base film 2 in the manufacturing process of the composite integrated film 1 was described (FIG. 2, step SP4). However, the present invention is not limited to this. For example, the light-emitting element group 10 may be formed by performing various manufacturing processes similar to those of various semiconductors on the base surface 2A.

[0103] Furthermore, in the above-described embodiment, in the manufacturing process of the composite integrated film 1, the case where the connection electrodes 20 and the wiring material group 40 are sequentially provided by independent processes has been described (FIG. 3). However, the present invention is not limited to this. For example, the connection electrodes 20 and the wiring material group 40 may be formed simultaneously with the same material, and for example, portions that are electrically connected to each other, such as the connection electrode 21 and the anode wiring material 41, may be integrated.

[0104] Furthermore, in the above-described embodiment, in the manufacturing process of the composite integrated film 1, the case where after the step SP3 of forming the connection electrodes 20, the step SP4 of transferring the light-emitting element group 10 is performed has been described. However, the present invention is not limited to this. For example, the connection electrodes 20 may be formed after transferring the light-emitting element group 10. Also, in this case, as described above, the connection electrodes 20 and the wiring material group 40 may be formed together.

[0105] Furthermore, in the above-described embodiment, in the manufacturing process of the LED display section 61, the case where one composite integrated film 1 is picked up from the forming substrate 51 by the transfer stamp 101 and attached to the circuit board 70 has been described (FIGS. 10, steps SP21 and SP22, and FIGS. 11(A) and (B)). However, the present invention is not limited to this. For example, a plurality of composite integrated films 1 may be picked up from the forming substrate 51 by a transfer stamp capable of picking up a plurality of composite integrated films 1 together and attached to the circuit board 70.

[0106] Furthermore, in the above-described embodiment, in the manufacturing process of the LED display section 61, the case where pressure is applied when attaching the composite integrated film 1 to the circuit board 70 by the transfer stamp 101 has been described (FIG. 10, step SP22). However, the present invention is not limited to this. For example, a certain amount of heat may be applied together with the pressure.

[0107] Furthermore, in the above-described embodiment, in the manufacturing process of the LED display unit 61, when an abnormal portion is detected, a predetermined solvent is discharged from the peeling head 105 to the abnormal portion to weaken the bond by intermolecular force, and then the composite integrated film 1 is peeled off from the circuit board 70 has been described (FIG. 10, step SP27). However, the present invention is not limited to this. For example, the composite integrated film 1 may be peeled off from the circuit board 70 by other methods after weakening the bond by intermolecular force or without weakening the bond by intermolecular force.

[0108] Furthermore, in the above-described embodiment, in the manufacturing process of the LED display unit 61, when no abnormal portion is detected, the connection electrode 20 of the composite integrated film 1 and the connection pad 80 of the circuit board 70 are bonded only by intermolecular force, and the LED display unit 61 is completed has been described (FIG. 10, step SP26). However, the present invention is not limited to this. For example, when no abnormal portion is detected (in the case of a negative result in step SP26), at least one of high pressure or heat may be applied to form a eutectic bond between the two to further increase the bonding strength between the two. In this case, the LED display unit 61 is in a "temporary fixing" state in which the two are bonded only by intermolecular force and are electrically connected and fixed with a relatively small force that allows easy replacement, and the state in which the eutectic bond is formed is a "permanent fixing" state in which the two are strongly fixed with a relatively large force that does not easily peel off.

[0109] Furthermore, in the above-described embodiment, the base material portion 71 of the circuit board 70 is made of glass epoxy resin, so that the circuit board 70 is flat and the LED display device 60 is a so-called flat panel display has been described. However, the present invention is not limited to this. For example, by using a flexible substrate having flexibility instead of the circuit board 70, an LED display device as a flexible display capable of bending and flexing may be configured.

[0110] Furthermore, the present invention is not limited to each of the above-described embodiments and other embodiments. That is, the present invention applies to embodiments that arbitrarily combine some or all of the above-described embodiments and other embodiments, and also to embodiments in which some are extracted.

[0111] Furthermore, in the above-described embodiments, the case where the composite integrated film 1 as a composite integrated film is configured by the base film 2 as a base film, the base film through hole 2V as a through hole, the connection electrode 20 as an electrode, and the light emitting element group 10 as an element has been described. However, the present invention is not limited to this, and a composite integrated film may be configured by a base film, a through hole, an electrode, and an element having various other configurations.

Industrial Applicability

[0112] The present invention can be used, for example, in an LED display in which a plurality of LEDs are arranged.

Explanation of Reference Numerals

[0113] 1... Composite integrated film, 1B... Back surface of the film, 2... Substrate thin film, 2A... Front surface of the substrate, 2B... Back surface of the substrate, 2V, 2V1, 2V2, 2V3, 2V4... Through holes in the substrate, 10... Light emitting element group, 11... Red light emitting element, 12... Green light emitting element, 13... Blue light emitting element, 11A, 12A, 13A... Anode terminal surface, 11K, 12K, 13K... Cathode terminal surface, 20, 21, 22, 23, 24... Connection electrodes, 20B, 21B, 22B, 23B, 24B... Back surface of the electrode, 40... Wiring material group, 41, 42, 43... Anode wiring materials, 44, 45, 46... Cathode wiring materials, 50... Manufacturing apparatus, 51... Forming substrate, 52... Forming surface, 53... Thin film layer, 60... LED display device, 61... LED display section, 66... Display driver, 70... Circuit board, 70A... Front surface of the board, 71... Substrate portion, 72, 73... Insulating layers, 73A... Insulating surface, 74... Vertical wiring material, 75... Horizontal common wiring material, 76... Internal wiring material, 77... Attachment area, 80... Connection pad, 80A, 81A, 82A, 83A, 84A, 591A, 592A, 593A... Pad surface, 81, 82, 83... Vertical wiring connection pads, 84... Horizontal common wiring connection pad, 90... Circuit board manufacturing apparatus, 402C1, 402C2, 402C3... Notches, 591, 592, 593... Sub-connection pads.

Claims

1. a pick-up step of picking up the composite integrated film from a forming substrate having a forming surface; a first bonding step of bonding the composite integrated film to a substrate surface of a circuit board; having The composite integrated film is provided in advance on the formation substrate, and includes a base thin film, one or more through-holes penetrating a base first surface and a base second surface opposed to each other in the base thin film, one or more electrodes having a planar electrode surface on the base second surface side, and an element provided on the base first surface, In the first bonding step, the second surface of the base material of the composite integrated film is bonded to the surface of the substrate.

4. A method for manufacturing a semiconductor composite device comprising the steps of:

2. the first joining step includes a pressurizing step of applying a predetermined pressure from the composite integrated film toward the circuit board, In the pressurizing step, the circuit board and the electrode surface are bonded together by intermolecular forces.

2. The method for manufacturing a semiconductor composite device according to claim 1.

3. an inspection step of inspecting the circuit board to which the composite integrated film is bonded; a peeling step of peeling off the abnormal portion determined by the inspection; a step of attaching a new composite integrated film to the peeled portion; a second bonding step of bonding the circuit board by applying at least one of a pressure equal to or greater than the predetermined pressure or heat when no abnormal portion is detected in the inspection of the circuit board; 3. The method for manufacturing a semiconductor composite device according to claim 1, further comprising:

4. The peeling step includes a step of discharging a predetermined solvent onto the abnormal portion determined by the inspection, thereby reducing the bonding strength of the composite integrated film to the circuit board.

4. The method for manufacturing a semiconductor composite device according to claim 3.

5. forming a flat forming surface on the forming substrate; forming the base thin film on the formation surface; a through-portion forming step of forming the through-portion; an electrode surface forming step of depositing a metal material in the through-hole to form the electrode surface on the second surface side of the substrate closer to the formation surface than the first surface of the substrate; and In the pick-up step, the second surface of the base material is peeled off from the formation substrate.

5. The method for manufacturing a semiconductor composite device according to claim 1.

6. The circuit board includes: a wiring forming step of forming a plurality of first direction wirings and a plurality of second direction wirings; forming an insulating layer on the first directional wiring and the second directional wiring; a hole forming step of forming a hole in the insulating layer to expose either the first directional wiring or the second directional wiring; a connection pad forming step of forming a plurality of connection pads by depositing a conductive metal material around the hole; a planarization step of planarizing the connection pads and the insulating layer so as to form the same plane; 6. The method for producing the semiconductor composite device according to claim 1, wherein the semiconductor composite device is produced by a method comprising the steps of:

7. an inspection step of inspecting the circuit board to which the composite integrated film is bonded; a second bonding step of bonding the circuit board by applying at least one of a pressure equal to or greater than the predetermined pressure or heat when no abnormal portion is detected in the inspection of the circuit board; and In the first bonding step, the electrode surface is bonded to a plurality of connection pads of the circuit board by intermolecular forces, and the base thin film is bonded to the insulating layer by intermolecular forces; In the second bonding step, the electrode surface is bonded to the connection pad by forming a eutectic bond.

7. The method for manufacturing a semiconductor composite device according to claim 6.

8. The formation surface, the second surface of the base material, the electrode surface, and the substrate surface all have a surface roughness of 10 nm or less.

8. The method for manufacturing a semiconductor composite device according to claim 1, wherein the semiconductor composite device is a semiconductor substrate.

9. A film step, which is a distance between the second surface of the substrate and the electrode surface in a normal direction of the second surface of the substrate, is 1 / 1000 or less of the shortest side of the outer shape of the thin substrate film.

9. The method for manufacturing a semiconductor composite device according to claim 1, wherein the semiconductor composite device is a semiconductor substrate.

10. A film step, which is a distance by which the electrode surface protrudes from the second surface of the substrate in a normal direction to the second surface of the substrate, is 1 / 1000 or less of the shortest side of the outer shape of the thin substrate film.

9. The method for manufacturing a semiconductor composite device according to claim 1, wherein the semiconductor composite device is a semiconductor substrate.

11. The electrode is provided so as to extend over the first surface of the substrate.

11. The method for manufacturing a semiconductor composite device according to claim 1.

12. The electrode is provided so as to cover the through-hole and its surroundings from the first surface side of the base material. The method for manufacturing a semiconductor composite device according to claim 11.

13. forming a flat forming surface on a forming substrate; forming a base thin film on the formation surface; a through-portion forming step of forming one or more through-portions penetrating the first substrate surface and the second substrate surface opposed to each other in the substrate thin film; an electrode forming step of depositing a metal material in the through-hole to form an electrode surface on the second surface of the substrate closer to the formation surface than the first surface of the substrate, and forming one or more electrodes provided so as to ride on the first surface of the substrate around the through-hole; A method for producing a composite integrated film, comprising the steps of:

14. An element disposing step of providing one or more elements on the first surface of the substrate. The method for producing a composite integrated film according to claim 13, further comprising:

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