Method for manufacturing laminate and laminate
The method enhances bonding and conductivity between silicon substrates with conductive regions by using an adhesive layer derived from an organic material reacting with activation regions, addressing adhesion and conductivity challenges in silicon substrate bonding.
JP2025155970AActive Publication Date: 2025-10-14DAIKIN INDUSTRIES LTD
4 Cites 0 Cited by
Patent Information
- Application Number
- JP2025034457
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-03-29
- Filing Date
- 2025-03-05
- Publication Date
- 2025-10-14
- Estimated Expiration
- 2045-03-05
AI Technical Summary
Technical Problem
Existing methods for bonding silicon substrates lack effective adhesion and conductivity, particularly when using conductive regions with small distances and thin adhesive layers.
Method used
A method involving the use of activated silicon substrates with conductive regions and an adhesive layer formed from a reaction product of an organic material, which reacts with activation regions on the substrates to create a laminate with conductive properties.
Benefits of technology
The method achieves improved adhesive strength and conductivity between silicon substrates with conductive regions, even at small distances, while minimizing voids and insulation issues.
✦ Generated by Eureka AI based on patent content.
Abstract
To provide a new laminate and a method for manufacturing the same.SOLUTION: A method for manufacturing a conductive laminate containing two silicon substrates includes: (a) preparing a first silicon substrate having a first conductive region on at least a portion of its surface and a second silicon substrate; (b) bonding a surface of the first silicon substrate containing the first conductive region to the second silicon substrate using an adhesive layer, and the adhesive layer comprises a first reaction product derived from a first organic material capable of reacting with a first activated region, formed on the first activated region provided by activating at least a portion of the surface of the first silicon substrate containing the first conductive region.SELECTED DRAWING: Figure 1A
Need to check novelty before this filing date? Find Prior Art