Display device

Abstract

To provide a display device that has a high display quality and can perform desired display without image data conversion.SOLUTION: A display device includes a first pixel. The first pixel has a first light-emitting element, a color conversion layer, and a first memory circuit. The first light-emitting element exhibits blue light. The color conversion layer has a function of converting light emitted by the first light-emitting element into light having a longer wavelength. A first image signal and a first correction signal are supplied to the first pixel. The first memory circuit has a function of retaining the first correction signal and a function of adding the first correction signal to the first image signal. The first pixel has a function of displaying an image using the first image signal and the first correction signal.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, there has been a demand for larger display devices. For example, in home television devices, The majority of screen sizes are over 50 inches diagonally. This allows for a larger amount of information to be displayed at once, making it possible to create even larger screens for digital signage, etc. is required.

[0004] There is also a demand for high-resolution display devices. For example, full high-definition (19 pixels) 20 x 1080), 4K (pixel count 3840 x 2160 or 4096 x 2160, etc.), Furthermore, resolutions such as 8K (7680 x 4320 or 8192 x 4320) A large number of display devices are being actively developed.

[0005] Electroluminescence (hereinafter referred to as EL) Light-emitting elements (also referred to as EL elements) that utilize the phenomenon are easy to make thin and lightweight. It has the features of being able to respond quickly to the Application to display devices is being considered. For example, Patent Document 1 discloses a display device in which an organic EL element is applied. , a flexible light emitting device is disclosed.

[0006] In addition, the use of quantum dots as color conversion (wavelength conversion) materials in EL devices is being considered. Quantum dots are semiconductor nanocrystals with a diameter of several nanometers, and the size of the dots is 1×10 3 Pieces to 1×10 6 Quantum dots are composed of approximately 100 atoms. Electrons, holes, and excitons are trapped inside the dot. As a result of being packed into the particles, their energy states become discrete and the energy distribution varies depending on the size. In other words, even if quantum dots are made of the same material, there is an energy shift. Therefore, the emission wavelengths are different, so it is easy to change the size of the quantum dots used. The emission wavelength can be adjusted.

[0007] Silicon is mainly used as the semiconductor material for the transistors that make up display devices, but recently In recent years, technology has been developed that uses transistors using metal oxides in the pixels of display devices. Patent Documents 2 and 3 describe a technique for using metal oxides as semiconductor materials for transistors. It has been disclosed. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-123861 [Patent Document 3] Japanese Patent Application Laid-Open No. 2007-96055 Summary of the Invention [Problem to be solved by the invention]

[0009] To display the image properly on a display device, the image data must be adjusted to the resolution of the display device. For example, if the resolution of the display device is 8K and the image data is for 4K, If the number of pixels is not converted to four times the original size, full screen display is not possible. If the image data is for 4K and 8K, the amount of data must be reduced to 1 / 4. In addition, HDR (High Dynamic Range) display technology is used to improve image quality by adjusting brightness. The introduction of technology is also progressing. Specialized technology is being used to convert the amount of data and generate image data using HDR processing. This requires a dedicated circuit, which increases power consumption. It is preferable that the signal can be input to the pixels of the display device without any distortion.

[0010] An object of one embodiment of the present invention is to increase the size of a display device. An object of one embodiment of the present invention is to provide a highly reliable display device. An object of one embodiment of the present invention is to provide a display device with low power consumption. One object of one embodiment of the present invention is to reduce the thickness and weight of a display device. Let's say.

[0011] Another aspect of the present invention is to provide a display device that can appropriately display image data without converting the image data. An object of one embodiment of the present invention is to provide a display device capable of HDR display. An object of one embodiment of the present invention is to provide a display device capable of performing an up-conversion operation. One object of the present invention is to provide a display device that can improve the luminance of a display image. An object of one embodiment of the present invention is to provide a display device that can display two or more images. An object of the present invention is to provide a display device that can display images in a superimposed manner. One of the objects of the present invention is to provide a display device capable of applying a voltage to a pixel that is equal to or greater than the output voltage of a driving circuit. do.

[0012] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0013] A display device according to one embodiment of the present invention includes a first pixel. The first pixel includes a first light-emitting element, a color The color conversion layer includes a first memory circuit and a first light-emitting element that emits blue light. The first pixel has a function of converting light emitted by the first light-emitting element into light with a longer wavelength. The first image signal and the first correction signal are supplied to the first memory circuit. The first image signal is stored in the memory, and the second image signal is added to the memory. The first pixel has a function of displaying an image using the first image signal and the first correction signal. .

[0014] The first light-emitting element includes a first light-emitting unit and a second light-emitting unit, each of which emits blue light. Alternatively, the first light emitting element may each emit blue light. The first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are stacked to form a Each light-emitting unit preferably emits fluorescence.

[0015] The color conversion layer preferably contains quantum dots.

[0016] The first pixel preferably further comprises a transistor, the transistor being a channel It is preferable to have a metal oxide in the hole-forming region.

[0017] The display device preferably further comprises a second pixel. The second pixel comprises a second light-emitting element. The second pixel has a second memory circuit and a second light-emitting element that emits blue light. , a second image signal and a second correction signal are supplied to the second memory circuit. and a function of adding a second correction signal to the second image signal. The pixel has a function of displaying an image using the second image signal and the second correction signal. The first pixel is a pixel that exhibits a different color from the second pixel. The second pixel emits blue light. It is a pixel that exhibits

[0018] The second light-emitting element includes a first light-emitting unit and a second light-emitting unit, each of which emits blue light. Alternatively, the second light emitting elements each emit blue light. The first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are stacked to form a It is preferable to have

[0019] The first pixel may further be supplied with a third correction signal. The circuit has a function of holding the third correction signal and a function of adding the third correction signal to the first image signal. The first pixel receives a first image signal, a first correction signal, and a third correction signal. It has the function of displaying images using the above.

[0020] A display device according to one embodiment of the present invention includes a first pixel. The first pixel includes a first light-emitting element, a color The first light-emitting element emits blue light. The device includes a first light-emitting unit that emits blue light, a second light-emitting unit that emits blue light, and The color conversion layer has a first light-emitting element and a third light-emitting unit that emits blue light stacked thereon. The first pixel has a function of converting light emitted by the first pixel into light of a longer wavelength. , a first correction signal, and a second correction signal are supplied to the first memory circuit. a function of adding a first correction signal to the first image signal; a function of adding a second correction signal to the first image signal; The second correction signal is added to the first image signal. The pixel 1 displays an image using the first image signal, the first correction signal, and the second correction signal. Each light-emitting unit preferably emits fluorescence.

[0021] The display device preferably further comprises a second pixel. The second pixel comprises a second light-emitting element. The first light-emitting element has a first memory circuit and a second memory circuit. The second light-emitting element emits blue light. a first light-emitting unit that emits blue light, a second light-emitting unit that emits blue light, and The second pixel has a third light-emitting unit that emits blue light stacked thereon. The second memory circuit is supplied with the third correction signal, the third correction signal, and the fourth correction signal. a function of retaining the signal, a function of adding a third correction signal to the second image signal, and a function of adding a fourth correction signal to the second image signal; The fourth correction signal is stored in the second image signal. The second pixel uses the second image signal, the third correction signal, and the fourth correction signal to generate an image. The first pixel has a function of displaying a different color from the second pixel. Pixel 2 is a pixel that emits blue light.

[0022] One aspect of the present invention is a display device having any of the above configurations, board (Flexible printed circuit, hereafter referred to as FPC) or is equipped with a connector such as TCP (Tape Carrier Package) Module, or COG (Chip On Glass) or COF (Chi Modules such as modules on which integrated circuits (ICs) are mounted using the "p On Film" method, etc. It is a rule.

[0023] One aspect of the present invention is a device including the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. [Effects of the Invention]

[0024] According to one embodiment of the present invention, a display device can be enlarged. According to one embodiment of the present invention, a highly reliable display device can be provided. According to one embodiment of the present invention, a display device with low power consumption can be provided. In this manner, the display device can be made thinner and lighter.

[0025] According to one aspect of the present invention, a display device capable of appropriately displaying image data without converting the image data can be provided. According to one embodiment of the present invention, a display device capable of performing HDR display can be provided. According to one embodiment of the present invention, a display device capable of performing an up-conversion operation can be provided. In this way, a display device capable of increasing the luminance of a displayed image can be provided. This makes it possible to provide a display device that can display two or more images in an overlapping manner. This makes it possible to provide a display device that can apply a voltage to pixels that is equal to or greater than the output voltage of the drive circuit.

[0026] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0027] [Figure 1] 1A and 1B are block diagrams showing an example of a pixel. [Figure 2] 2A and 2B are cross-sectional views showing an example of a pixel. [Figure 3] 3(A) to 3(C) are cross-sectional views showing an example of a pixel. [Figure 4] 4(A) to 4(D) are cross-sectional views showing an example of a light-emitting device. [Figure 5] 5A is a top view showing an example of a display device, and FIG. 5B is a cross-sectional view showing an example of a display device. [Figure 6] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 7] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 8] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 9] 9A and 9B are cross-sectional views illustrating an example of a transistor. [Figure 10] 10A and 10B are block diagrams showing an example of a pixel, and circuit diagrams showing an example of a pixel, respectively. [Figure 11] 11(A) and 11(B) are timing charts showing an example of pixel operation. [Figure 12] 12(A) and 12(B) are circuit diagrams showing an example of a pixel. [Figure 13] 13(A) to 13(C) are timing charts showing an example of pixel operation. [Figure 14] 14(A) to 14(C) are timing charts showing an example of pixel operation. [Figure 15] 15(A) to 15(C) are circuit diagrams showing examples of circuit blocks. [Figure 16] 16A and 16B are diagrams for explaining image data correction and image synthesis. [Figure 17] 17(A) to 17(D) are diagrams showing examples of electronic devices. [Figure 18] 18(A) to 18(F) are diagrams showing examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0028] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0029] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0030] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0031] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be replaced with "conductive film." Alternatively, for example, the term "insulating film" can be changed to The term can be changed to "insulating layer."

[0032] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0033] A display device according to one embodiment of the present invention includes a first pixel and a second pixel. The second pixel has a second light-emitting element, a color conversion layer, and a first memory circuit. and a second memory circuit.

[0034] The second pixel is a pixel that emits blue light. The second light-emitting element emits blue light.

[0035] The first pixel is a pixel that exhibits a different color than the second pixel. For example, the first pixel is red. The first light-emitting element emits blue light. The color conversion layer has a function of converting the light emitted by the first light emitting element into light of a longer wavelength.

[0036] Since the light emitting elements of each pixel emit blue light, the light emitting elements that emit white light are Compared to fabricating a thin film, the number of layers and types of materials to be formed can be reduced, and the manufacturing equipment and process can be simplified. In addition, since each pixel has a light emitting element with the same configuration, it is possible to create multiple types of light emitting elements. Compared to the case where the light is divided into two parts (e.g., when light-emitting elements that emit red, green, and blue light are fabricated separately), In general, high alignment accuracy and suppression of bending of the metal mask are not required. Therefore, such a pixel configuration can be easily applied to a large display device.

[0037] In addition, when organic EL elements are used as light-emitting elements, it becomes easier to make the display device thinner and lighter. In particular, it is preferable to use an organic EL element having a tandem structure in which a plurality of light-emitting units are stacked. By doing so, it is possible to extend the life of the light emitting element, and to provide a highly reliable display device. For example, the light-emitting element may have two or three light-emitting units that each emit blue light. It is preferable that:

[0038] It is also preferable to use quantum dots (QD) as the color conversion layer. Quantum dots have a narrow peak width in the emission spectrum, and can emit light with good color purity. This makes it possible to improve the display quality of the display device.

[0039] The first pixel is supplied with a first image signal and a first correction signal. a function of storing a first correction signal; and a function of adding the first correction signal to a first image signal; The first pixel displays an image using the first image signal and the first correction signal. It has a function.

[0040] The second pixel is supplied with a second image signal and a second correction signal. a function of storing the second correction signal; and a function of adding the second correction signal to the second image signal; The second pixel displays an image using the second image signal and the second correction signal. It has a function.

[0041] In the display device according to one embodiment of the present invention, correction data is generated in addition to an image signal corresponding to image data. This allows the pixel to receive a signal (correction signal) corresponding to the image data. The desired display can be achieved even if the image data is supplied to the pixel without conversion. This makes it possible to reduce the circuitry required and power consumption. For example, HDR display, up-conversion operation, and improved brightness of displayed images are possible. By using a correction signal that is different from the image signal, two or more images can be displayed superimposed. It is possible.

[0042] The number of correction signals supplied to one pixel may be one or more (for example, two). It is also possible.

[0043] Furthermore, when a transistor included in a pixel has a metal oxide in a channel formation region, the off-state current This is preferable because the correction signal can be maintained for a long time.

[0044] [Pixels] 1A and 1B are block diagrams of pixels included in a display device of one embodiment of the present invention. .

[0045] As shown in FIG. 1A, a pixel included in a display device of one embodiment of the present invention has a switching transistor. Transistor (Switching Tr), Driving Transistor (Driving Tr), In addition to the light emitting element, ory).

[0046] The memory is supplied with data DATA_W. In addition to image data DATA, data D When ATA_W is supplied to the pixel, the current flowing through the light emitting element increases, and the display device High brightness can be expressed.

[0047] By supplying data DATA_W to the pixel, in the display device of one embodiment of the present invention, for example, Image upconversion, HDR table to correct partial or entire image in the display area It is also possible to perform image correction such as displaying multiple images or improving the brightness of the displayed image. It is also possible to display two or more pixels by overlapping them, or to supply a voltage to the pixels that is higher than the output voltage of the driver circuit. can.

[0048] Note that a pixel can have multiple memories. This allows storing data other than image data DATA. Therefore, the above image correction and the multiple image data can be It is now possible to perform multiple processes such as overlay processing, and to perform these processes with high precision. do.

[0049] FIG. 1B shows an example of a pixel having two memories. Memory_A has: Data DATA_W1 is supplied to memory Memory_B, and data DATA_W2 For example, one memory is used to perform image correction on the image data DATA, and the other Using one memory, another image can be superimposed on the image data DATA.

[0050] A configuration example of the pixel circuit will be described in detail in the second embodiment.

[0051] 2A and 2B are cross-sectional views of a pixel of a display device according to one embodiment of the present invention.

[0052] The display device shown in FIG. 2(A) has a top emission structure, and the display device shown in FIG. 2(B) The display device shown in FIG. 1 has a bottom emission structure.

[0053] In Figure 2(A) and Figure 2(B), one color is represented by three pixels of R (red), G (green), and B (blue). Specifically, in Fig. 2(A) and Fig. 2(B), a pixel 1100R that exhibits green light, a pixel 1100G that exhibits blue light, Note that the display device of one embodiment of the present invention is not limited to the color elements. It is not recommended to use colors other than RGB (for example, white, yellow, cyan, or magenta). That's fine.

[0054] In this specification, a pixel refers to, for example, one element whose brightness can be controlled. Therefore, as an example, one pixel indicates one color element, and one color element It expresses brightness. In the case of a color display device consisting of the color elements R (red), G (green), and B (blue), The minimum unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel. In this case, each pixel of RGB can be called a sub-pixel, and R The three sub-pixels of the GB can be collectively called a pixel.

[0055] The pixels 1100R, 1100G, and 1100B each include a light-emitting element 1100 that emits blue light. It has 05B.

[0056] The pixel 1100R further includes a color conversion layer 1104R. The color conversion layer 1104R is a blue light can be converted into red light.

[0057] In pixel 1100R, blue light emitted from light emitting element 1105B is incident on color conversion layer 11. The red light 1106R is converted into red light by 04R, and the red light 1106R is extracted to the outside.

[0058] The pixel 1100G further includes a color conversion layer 1104G. The color conversion layer 1104G is blue. It can convert light into green light.

[0059] In the pixel 1100G, the wavelength of the blue light emitted from the light emitting element 1105B is converted into The layer 1104G converts the light into green light, and the green light 1106G is extracted to the outside. can be.

[0060] Since pixel 1100B does not have a color conversion layer, the light emitted from light-emitting element 1105B The blue light 1106B is extracted to the outside.

[0061] The color conversion layer may be made of a phosphor or quantum dots.

[0062] It is preferable to use quantum dots as the color conversion layer. The conversion layer can emit light with a narrow half-width and vivid color. It can improve sexuality.

[0063] The color conversion layer can be formed by a droplet ejection method (for example, an inkjet method), a coating method, an imprint method, or various methods. It can be formed by using a printing method (screen printing, offset printing, etc.). A color conversion film such as a dot film may also be used.

[0064] The material for forming the quantum dots is not particularly limited, and examples thereof include elements of Group 14, Group 15, and the like. Elements, Group 16 elements, compounds consisting of multiple Group 14 elements, and elements belonging to Groups 4 to 14 Compounds of Group 16 elements and Group 2 elements, compounds of Group 16 elements and Group 13 elements Compounds with Group 15 elements, compounds with Group 13 elements and Group 17 elements, compounds with Group 14 elements and Group 1 Compounds with Group 5 elements, compounds with Group 11 and Group 17 elements, iron oxides, titanium oxides , chalcogenide spinels, semiconductor clusters, etc.

[0065] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide , zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Sodium, indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium arsenic telluride, arsenic sulfide, antimony selenide, antimony telluride, sulfur Bismuth oxide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium , tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Calcium, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, Beryllium telluride, beryllium sulfide, magnesium selenide, sulfur Germanium oxide, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, oxide Nickel, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide Vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide , silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc and cadmium compounds, indium, arsenic and phosphorus compounds, cadmium, selenium and sulfur compounds Compounds, compounds of cadmium, selenium and tellurium, compounds of indium, gallium and arsenic, Compounds of indium, gallium and selenium, compounds of indium, selenium and sulfur, compounds of copper and indium Examples include compounds of sodium and sulfur, and combinations thereof. So-called alloy quantum dots expressed in a ratio may also be used.

[0066] Quantum dot structures include core type, core-shell type, and core-multishell type. In addition, quantum dots have a high proportion of surface atoms, which makes them highly reactive and prone to aggregation. Therefore, a protective agent or a protective group is attached to the surface of the quantum dots. It is preferable that the protecting agent is attached or the protecting group is provided. This prevents aggregation and increases solubility in solvents. It is also possible to improve electrical stability.

[0067] As quantum dots become smaller, their band gaps become larger, so they can emit light at the desired wavelength. The size of the crystal is adjusted accordingly to obtain the light. , quantum dots emit light that is shifted to the blue side, i.e., to higher energy side, so quantum dots By changing the size of the The emission wavelength can be adjusted over a wide range. For example, it is 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The narrower the dot size distribution, the narrower the emission spectrum, resulting in emission with good color purity. The shape of the quantum dot is not particularly limited, and may be spherical, rod-shaped, or disk-shaped. Quantum rods, which are rod-shaped quantum dots, have directionality. It has the function of emitting light.

[0068] The light-emitting element 1105B includes a first electrode 1101, an EL layer 1103B that emits blue light, and It has a second electrode 1102 .

[0069] One of the first electrode 1101 and the second electrode 1102 functions as an anode, and the other functions as a cathode. In this embodiment, the first electrode 1101 functions as an anode, and the second electrode The electrode 1102 functions as the cathode.

[0070] A voltage higher than the threshold voltage of the light-emitting element is applied between the first electrode 1101 and the second electrode 1102. When a voltage is applied, holes are injected into the EL layer 1103B from the anode (first electrode 1101) side, and the cathode Electrons are injected from the electrode (second electrode 1102) side. The injected electrons and holes are transported to the EL layer 11 The electrons recombine in EL layer 1103B, causing the luminescent material contained in EL layer 1103B to emit light.

[0071] Although not shown in FIGS. 2A and 2B, the light emitting element 1105B controls light emission. It is electrically connected to the transistor.

[0072] The EL layer 1103B has at least a light-emitting layer containing a light-emitting material that emits blue light.

[0073] The luminescent material is not particularly limited, and may be a fluorescent material or a phosphorescent material. (phosphorescent materials), materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence activated delayed fluorescence (TADF) material), Inorganic compounds (such as quantum dot materials) can be used.

[0074] The EL layer 1103B may further include layers having functions such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. In addition, when a structure in which multiple EL layers are stacked is used, a charge is generated between the EL layers. The EL layer 1103B may be made of either a low molecular weight compound or a high molecular weight compound. The inorganic compound may also be contained.

[0075] The EL layer 1103B may have multiple light-emitting units. Each light-emitting unit may be blue. Each light-emitting unit further comprises a light-emitting layer containing a light-emitting material that emits light of the positive polarity. It has functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. A charge generating layer is sandwiched between the layers.

[0076] The display device according to one embodiment of the present invention is not limited to a configuration in which one color is displayed using three color pixels. For example, a display device has four pixels of red (R), green (G), blue (B), and white (W) that represent one color. Specifically, in FIG. 3A, a pixel 11 that emits red light may be applied. 00R, a pixel 1100G that exhibits green light, a pixel 1100B that exhibits blue light, and a white Pixel 1100W exhibiting color light is shown.

[0077] The pixel 1100W that emits white light shown in FIG. 3A includes a light emitting element 11 that emits blue light. The color conversion layer 1104W converts blue light into white light. can be converted.

[0078] In pixel 1100W, blue light emitted from light emitting element 1105B is incident on color conversion layer 11. By converting it into white light using 0.04W, 1106W of white light is extracted to the outside.

[0079] As shown in FIGS. 3B and 3C, in order to enhance only the blue light, the first electrode 110 The first electrode 1101 is a reflective electrode, and the second electrode 1102 is a semi-transparent and semi-reflective electrode. The structure may be a micro-optical resonator (microcavity). By using this structure, light emitted from the light-emitting layer included in the EL layer 1103B is By causing resonance, the light emitted through the second electrode 1102 can be strengthened.

[0080] In FIG. 3B and FIG. 3C, an optical adjustment is performed between the first electrode 1101 and the second electrode 1102. A layer 1107 is provided.

[0081] FIG. 3(B) shows an example in which a microcavity structure is applied to pixels that emit light of each color. FIG. 3C shows a case where a microcavity structure is applied only to the pixel 1100B that emits blue light. Here is an example.

[0082] The optical adjustment layer 1107 is made of a conductive film having light transmission properties (transparent conductive film). Optical adjustment can be performed by controlling the film thickness. For example, a laminated structure of a reflective electrode and an optical adjustment layer can be considered as an electrode of the light-emitting element. may be applied to the first electrode 1101.

[0083] In addition, one or more of the functional layers included in the EL layer 1103B may be used to form the first electrode 110 The optical distance between the first electrode and the second electrode 1102 may be adjusted.

[0084] Specifically, the wavelength λ of the light obtained from the light emitting layer is The distance between the electrode 1102 and the electrode is adjusted to be approximately mλ / 2 (where m is a natural number). It is preferable that:

[0085] In addition, in order to amplify the desired light (wavelength: λ) obtained from the light emitting layer, the first electrode 110 The optical distance from the second electrode 11 to the region (light-emitting region) of the light-emitting layer where desired light is obtained, 02 to the area (light-emitting area) where the desired light of the light-emitting layer is obtained, and the optical distance ( It is preferable to adjust it to be close to 2m'+1)λ / 4 (where m' is a natural number). The light-emitting region here refers to the recombination region of holes and electrons in the light-emitting layer. show.

[0086] By performing such optical adjustment, a specific monochromatic light (in this embodiment) is obtained from the light-emitting layer. In this case, the spectrum of the light (blue light) can be narrowed, resulting in light emission with good color purity.

[0087] However, in the above case, strictly speaking, the optical distance between the first electrode 1101 and the second electrode 1102 is The total distance from the reflective area of ​​the first electrode 1101 to the reflective area of ​​the second electrode 1102 is However, the reflection of the first electrode 1101 and the second electrode 1102 Since it is difficult to precisely determine the area, the first electrode 1101 and the second electrode 1102 It is assumed that the above-mentioned effect can be obtained by assuming any position of the reflection area. In addition, strictly speaking, the optical distance between the first electrode 1101 and the light-emitting layer from which the desired light is obtained is A reflective region in the first electrode 1101 and a light-emitting region in the light-emitting layer from which desired light is obtained. However, the reflective area of ​​the first electrode 1101 and However, since it is difficult to precisely determine the light-emitting region in the light-emitting layer from which desired light can be obtained, Any position on the first electrode 1101 is a reflective region, and any position on the light-emitting layer from which desired light can be obtained is a By assuming it to be a light-emitting region, the above-mentioned effects can be sufficiently obtained.

[0088] The microcavity structure makes it possible to increase the intensity of blue light emitted in the front direction. This allows for lower power consumption.

[0089] One or both of the first electrode 1101 and the second electrode 1102 is a light-transmitting electrode. The first electrode 1101 or the second electrode The other electrode 1102 is preferably a reflective electrode. The visible light transmittance of the transparent electrode is 40%. The reflectance of the semi-transmissive / semi-reflective electrode for visible light is preferably 20% or more and 80% or less. The reflectance of the reflective electrode for visible light is preferably 40% or more and 70% or less. % or less, preferably 70% or more and 100% or less.

[0090] [Light-emitting element] FIG. 4(A) shows a specific example of a light emitting element with a single structure.

[0091] The light-emitting element shown in FIG. 4A has an EL layer between a first electrode 1101 and a second electrode 1102. The EL layer 1103B includes a hole injection layer 1111, a hole transport layer 1112, The light-emitting layer 1113, the electron transport layer 1114, and the electron injection layer 1115 are connected to the first electrode 1101. The EL layer 1103B emits blue light.

[0092] 4(B) to 4(D) show specific examples of light-emitting devices with a tandem structure. The light-emitting element shown in (D) has a plurality of light-emitting elements between a first electrode 1101 and a second electrode 1102. A charge generating layer 1109 is preferably provided between the two light emitting units. Preferably, each light-emitting unit emits blue light. It may have a material and may have a different luminescent material.

[0093] For example, the EL layer 1103B shown in FIG. 4(B) includes a light-emitting unit 1123B(1) and a light-emitting unit 1123B(2). Between the knit 1123B(2) is a charge generating layer 1109.

[0094] When a voltage is applied between the first electrode 1101 and the second electrode 1102, the charge generating layer 1109 Then, one of the light emitting units 1123B(1) and 1123B(2) is turned on. In FIG. 4(B), the electrons are injected into one side and the holes are injected into the other side. Then, a voltage is applied to the first electrode 1101 so that the potential is higher than that of the second electrode 1102. When this occurs, electrons are injected from the charge generating layer 1109 into the light emitting unit 1123B(1), Holes are injected into unit 1123B(2).

[0095] The charge generating layer 1109 transmits visible light (specifically, It is preferable that the visible light transmittance of the charge generating layer 1109 is 40% or more. The charge generating layer 1109 has a lower conductivity than the first electrode 1101 and the second electrode 1102. It still works.

[0096] The EL layer 1103B shown in FIG. 4(C) comprises a first light-emitting unit 1123B(1) and a second light-emitting unit 1123B(2). The charge generating layer 1109 is disposed between the second light emitting unit 1123B(2) and the second light emitting unit 1123B(3). The charge generation layer 1109 is disposed between the third EL layer 1103B(2) and the third EL layer 1103B(3). The light-emitting element shown in FIG. 4(D) has n EL layers (n is a natural number of 2 or more), and each Between the EL layers, a charge generating layer 1109 is provided.

[0097] A power supply provided between the light-emitting unit 1123B(m) and the light-emitting unit 1123B(m+1) The behavior of electrons and holes in the charge generating layer 1109 will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the electrodes 1102 of the charge generating layer 1 and the charge generating layer 2, Holes and electrons are generated in the second electrode 1102. The electrons move to the light-emitting unit 1123B(m+1) on the first electrode 1101 side. The hole injected into the light-emitting unit 1123B(m+1) moves to the light-emitting unit 1123B(m). recombines with the electrons injected from the second electrode 1102 side, and emits light in the light-emitting unit 1123B (m The luminescent material contained in the luminescent unit 1123B(m) emits light. The electrons are recombined with holes injected from the first electrode 1101 side, and emitted to the light-emitting unit 1123. The luminescent material contained in B(m) emits light. The holes and electrons each lead to emission in different light-emitting units.

[0098] By providing the light-emitting units in contact with each other, a charge generating layer and a charge generating layer are formed between the light-emitting units. When the same structure is formed, the light-emitting units are provided in contact with each other without a charge generating layer therebetween. For example, when a charge generating region is formed on one surface of the light emitting unit, A light emitting unit can be provided in contact with the surface.

[0099] Tandem-structured light-emitting devices have higher current efficiency than single-structured light-emitting devices, and The current required to make it glow at a certain brightness is small. Therefore, the life of the light-emitting element is long, and the display This can improve the reliability of the system.

[0100] The luminescent material of each luminescent unit is not particularly limited. It is preferable that a plurality of units are laminated. One or more of each of the light-emitting units may be laminated.

[0101] [Display device] Specific examples of the display device according to one embodiment of the present invention will be described with reference to FIGS.

[0102] 5A shows a top view of the display device 10A. FIG. 5B shows the display device 10A along the dashed line shown in FIG. A cross-sectional view between A1 and A2 is shown.

[0103] The display device 10A shown in FIG. 5A includes a display unit 71 and a driver circuit 78. FPC74 is connected to 0A.

[0104] The display device 10A is a display device with a top emission structure.

[0105] As shown in FIG. 5B, the display device 10A includes a substrate 361, an insulating layer 367, a transistor 301, 303, wiring 307, insulating layer 314, light emitting element 110B, insulating layer 104, protective layer 117, the partition wall 107, the color conversion layer CCMR, the color conversion layer CCMG, the adhesive layer 318, and the substrate 3 He has 71 etc.

[0106] The light emitting element 110B emits blue light. The light emitting element 110B includes a pixel electrode 111, an EL layer The pixel electrode 111 is connected to the source of the transistor 303. or drain. These may be directly connected or connected through other conductive layers. The EL layer 113 and the common electrode 115 are provided across the plurality of light-emitting elements. It is being done.

[0107] The light emitting element 110B is covered with a protective layer 117.

[0108] In the pixel that emits red light, the light emitting element 110B is connected to the color conversion layer 111 via the protective layer 117. The blue light emitted from the light emitting element 110B is converted by the color conversion layer CCMR. The red light 106R is then converted into red light, and the red light 106R is extracted to the outside.

[0109] In the pixel that emits green light, the light emitting element 110B is connected to the color conversion layer 111 via the protective layer 117. The blue light emitted from the light emitting element 110B is converted by the color conversion layer CCMG. The green light 106G is then converted into green light, and the green light 106G is extracted to the outside.

[0110] Since the pixel that emits blue light does not have a color conversion layer, the blue light emitted from the light emitting element 110B The blue light 106B is extracted to the outside through the protective layer 117.

[0111] For example, the color conversion layers CCMR and CCMG are formed by ink jet printing after the partition walls 107 are formed. This makes it easy to form the color conversion layer in a desired area. become.

[0112] The insulating layer 104 covers the ends of the pixel electrodes 111. , and are electrically insulated by an insulating layer 104.

[0113] The protective layer 117 is provided on the light emitting element 110B, covers the edge of the common electrode 115, and The outer ends of the pole 115 are in contact with the insulating layer 104 and the insulating layer 313. In particular, the protective layer 117 and the insulating layer 118 can be prevented from being infiltrated into the transistor and the light emitting element. It is preferable to use an inorganic film (or an inorganic insulating film) with high barrier properties for the insulating layer 313. In addition, it is preferable to use an inorganic insulating film with high barrier properties for the insulating layer 104. By laminating multiple inorganic films (or inorganic insulating films) in contact with each other in the area and its vicinity, This makes it difficult for impurities to enter from the outside, and suppresses deterioration of the transistor and the light-emitting element. This can be done.

[0114] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 318. The space 121 sealed by the substrate 371 and adhesive layer 318 is filled with an inert gas such as nitrogen or argon. It is preferably filled with a gas or a resin.

[0115] The substrate 361 and the substrate 371 are made of a material such as glass, quartz, resin, metal, alloy, or semiconductor. The substrate 371 on the side where light from the light emitting element is extracted is made of a material that transmits the light. It is preferable to use a flexible substrate as the substrate 361 and the substrate 371. It's nice.

[0116] The adhesive layer can be made of a variety of adhesives, including UV-curable and other light-curable adhesives, reactive-curable adhesives, heat-curable adhesives, and adhesives containing Various curing adhesives such as vapor-curing adhesives can be used. Good too.

[0117] The driver circuit 78 includes a transistor 301. The display unit 71 includes a transistor 303. .

[0118] Each transistor includes a gate, a gate insulating layer 311, a semiconductor layer, a back gate, a source, and a The gate (lower gate) and the semiconductor layer are connected via a gate insulating layer 311. The back gate (upper gate) and the semiconductor layer are overlapped by the insulating layer 312 and the insulating layer 313. The two gates are preferably electrically connected to each other.

[0119] The transistor structures may be different between the drive circuit 78 and the display unit 71. The display unit 8 and the display unit 71 may each have multiple types of transistors.

[0120] The transistors and wirings are arranged so as to overlap the light-emitting region of the light-emitting element 110B. The aperture ratio of the portion 71 can be increased.

[0121] At least one of the insulating layers 312, 313, and 314 is impregnated with water or It is preferable to use a material that is difficult for impurities such as hydrogen to diffuse. This effectively prevents diffusion of the oxide into the transistor, improving the reliability of the display device. The insulating layer 314 functions as a planarization layer.

[0122] The insulating layer 367 functions as a base film. It is preferable to use a material that is difficult for impurities to diffuse.

[0123] The connection section 306 has a wiring 307. The wiring 307 is connected to the source and drain of the transistor. The wiring 307 can be formed using the same material and process as the driver circuit 78. The external input terminal is electrically connected to the external input terminal, which transmits signals and potentials from the outside. 3 shows an example in which an FPC 74 is provided as an input terminal. Wire 307 provides the electrical connection.

[0124] The connector 319 may be made of various anisotropic conductive films (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) Pic Conductive Paste) can be used.

[0125] The protective layer 117 preferably has at least one inorganic film (or inorganic insulating film). It is more preferable that the protective film has one or more inorganic films and one or more organic films. The layer 117 includes a first inorganic film on the common electrode 115, an organic film on the first inorganic film, and a and a second inorganic film.

[0126] It is preferable that the inorganic film (or inorganic insulating film) has high moisture resistance and is resistant to water diffusion and penetration. Furthermore, the inorganic film (or inorganic insulating film) allows the diffusion and permeation of either or both hydrogen and oxygen. This makes it possible to make the inorganic film (or inorganic insulating film) function as a barrier film. In addition, it is possible to effectively prevent impurities from diffusing into the light emitting element from the outside. This effectively suppresses the noise, thereby realizing a highly reliable display device.

[0127] The protective layer 117 may be formed of an insulating oxide film, an insulating nitride film, an insulating oxynitride film, an insulating nitride oxide film, or the like. Examples of the oxide insulating film include a silicon oxide film, an aluminum oxide film, and an oxide film. Gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, laminar oxide film Examples of the thin film include a tantalum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film. Examples of the nitride insulating film include a silicon oxynitride film. Examples of the film include a silicon oxide film.

[0128] In this specification and elsewhere, an oxynitride is a compound containing more oxygen than nitrogen. Nitrogen oxide refers to a material that contains more nitrogen than oxygen. Refers to the material.

[0129] In particular, the silicon nitride film, the silicon nitride oxide film, and the aluminum oxide film each have moisture-proof properties. It is suitable as the protective layer 117 because of its high thermal conductivity.

[0130] The protective layer 117 may be made of ITO, Ga—Zn oxide, Al—Zn oxide, or In- An inorganic film containing Ga-Zn oxide or the like can also be used. The inorganic film has high resistance. It is preferable that the resistance of the common electrode 115 is higher than that of the common electrode 115. The inorganic film may further contain nitrogen.

[0131] For example, a conductive film that transmits visible light used for the common electrode 115 and a conductive film that transmits visible light used for the protective layer 117 may be used. The light-transmitting inorganic film may have a common metal element. The presence of a metal element can improve the adhesion between the common electrode 115 and the protective layer 117, This can prevent film peeling and the intrusion of impurities from the interface.

[0132] The protective layer 117 is made of acrylic resin, epoxy resin, polyimide resin, or polyamide resin. , polyimide amide resin, polysiloxane resin, benzocyclobutene resin, and pheno The insulating film may have an organic insulating film made of a vinyl resin or the like.

[0133] The protective layer 117 has a specific resistance of 10 10 It is preferable that the resistivity is Ωcm or more.

[0134] The protective layer 117 is formed by chemical vapor deposition (CVD). Plasma Enhanced Chemical Vapor Deposition (PECVD) Chemical Vapor Deposition), sputtering ( DC sputtering, RF sputtering, ion beam sputtering, etc.) Using atomic layer deposition (ALD) method, etc. It can be formed.

[0135] The sputtering method and the ALD method allow for film formation at low temperatures. The layer 113 has low heat resistance. Therefore, the protective layer 117 formed after fabricating the light-emitting element is It is preferable to form the film at a relatively low temperature, typically 100° C. or less, by sputtering or the like. The ALD method is suitable.

[0136] The protective layer 117 is formed by stacking two or more insulating films formed by different film forming methods. You may do so.

[0137] In addition, the insulating layer 104 may be an inorganic insulating film or an organic insulating film that can be used for the protective layer 117. may also be used.

[0138] The insulating layer 104 formed before the light emitting element is fabricated can be formed at a high temperature. By setting the substrate temperature to a high temperature (for example, 100°C or higher and 350°C or lower), a dense and barrier-resistant The insulating layer 104 can be formed by a sputtering method and an ALD method. In addition to the above-mentioned method, the CVD method is also suitable. The CVD method is preferred because of its high film formation speed.

[0139] The substrate 361 and the substrate 371 may be made of a material such as glass, quartz, organic resin, metal, alloy, or semiconductor. Fees can be used.

[0140] The partition wall 107 may have a light-shielding property. The partition wall 107 blocks light from the pixel or color conversion layer, thereby suppressing color mixing between adjacent pixels. For example, it can be formed using a metal material, or a resin material containing a pigment or dye. In addition, when the partition wall 107 has a light-shielding property, it is provided in an area other than the display area such as a driving circuit. This is preferable because it is possible to suppress unintended light leakage due to guided light or the like.

[0141] FIG. 6 shows a cross-sectional view of the display device 10B, FIG. 7 shows a cross-sectional view of the display device 10C, and FIG. 10B, 10C, and 10D are cross-sectional views of the display device 10B, 10C, and 10D, respectively. 6 to 8 are the same as the display device 10A shown in FIG. 5(A). It should be noted that the same parts as those of the display device 10A are In some cases, explanations may be omitted.

[0142] The display device 10B shown in FIG. 6 is a display device with a top emission structure.

[0143] The display device 10B includes a substrate 361, an adhesive layer 363, an insulating layer 365, transistors 301, 3 03, wiring 307, insulating layer 314, light emitting element 110B, insulating layer 104, protective layer 117, color It includes a conversion layer CCMR, a color conversion layer CCMG, an adhesive layer 317, a substrate 371, and the like.

[0144] In the display device 10A shown in FIG. 5B, the color conversion layers CCMR and CCMG are disposed on the substrate Specifically, in FIG. 5B, the light emitting element 110B and the color conversion layer The CCMR or the color conversion layer CCMG is connected to each other via the protective layer 117 and the space 121. On the other hand, in the display device 10B shown in FIG. 6, the color conversion layer CCMR and the color conversion layer C The CMG is provided on and in contact with the protective layer 117. Specifically, in FIG. 10B and the color conversion layer CCMR or CCMG are mutually connected via a protective layer 117. The color conversion layer CCMR or CCMG and the substrate 371 are overlapped with each other by the adhesive layer 31. Overlap each other through 7.

[0145] When the color conversion layer is formed directly on the protective layer 117, or when the color conversion layer is formed on the substrate 371, This is preferable because it is easier to align the color conversion layer with the light emitting region of the light emitting element. When the color conversion layer is formed on the protective layer 117, the formation method and the This is preferable because it widens the range of selection of forming conditions.

[0146] The substrate 361 and the substrate 371 are bonded together by an adhesive layer 317. 61 and the insulating layer 365 are bonded together by an adhesive layer 363 .

[0147] The display device 10B is a device in which transistors, light emitting elements, etc. formed on a fabrication substrate are mounted on a substrate 361. The substrate 361 and the substrate 371 are each flexible. This makes it possible to improve the flexibility of the display device 10B.

[0148] The display device 10B differs from the display device 10A in the structure of the transistors 301 and 303.

[0149] The transistors 301 and 303 shown in FIG. 6 include a back gate, a gate insulating layer 311, a semiconductor The semiconductor layer includes a gate insulating layer, a gate, an insulating layer 315, a source, and a drain. The back gate (lower gate) and the channel forming region are connected to each other. The channel forming region overlaps with the gate insulating layer 311. The channel forming region overlaps with the gate insulating layer. The source and drain are respectively formed by insulating layers. An opening in layer 315 provides electrical contact with the low resistance region.

[0150] The display device 10C shown in FIG. 7 is a display device with a bottom emission structure.

[0151] The display device 10C includes a substrate 361, an insulating layer 367, transistors 301 and 303, and wiring 30. 7, conductive layer 355, insulating layer 314, light emitting element 110B, insulating layer 104, protective layer 117, color It includes a conversion layer CCMG, an adhesive layer 317, and a substrate 371, etc.

[0152] In the pixel that emits green light, the light emitting element 110B is connected to the color conversion layer 314 via the insulating layer 314. The blue light emitted from the light emitting element 110B is converted by the color conversion layer CCMG. The green light 106G is then converted into green light, and the green light 106G is extracted to the outside.

[0153] Since the pixel that emits blue light does not have a color conversion layer, the blue light emitted from the light emitting element 110B The blue light 106B is extracted to the outside via the insulating layer 314.

[0154] The color conversion layer CCMG is a layer of a plurality of insulating layers provided between the light emitting element 110B and the substrate 361. The color conversion layer CCMG can be provided on the insulating layer. In this case, the color conversion layer CCMG provided on another substrate is bonded to the light emitting element. This is preferable because it makes it easier to align with the light-emitting region.

[0155] Since the display device 10C has a bottom emission structure, the transistor 303 is connected to the light emitting element 1. The transistor 303 is disposed at a position that does not overlap with the light-emitting region of the insulating layer 104. It is provided at a position overlapping with.

[0156] The connection portion 306 includes a wiring 307 and a conductive layer 355. The wiring 307 is The conductive layer 35 can be formed using the same material and in the same process as the source and drain. The wiring 30 can be formed using the same material and in the same process as the pixel electrode 111. 7 is electrically connected to an external input terminal that transmits signals and potentials from the outside to the drive circuit 78. Here, an example is shown in which an FPC 74 is provided as an external input terminal. The FPC 74 and the wiring 307 are electrically connected via the connector 319 .

[0157] A display device 10D shown in FIG. 8 is a display device with a bottom emission structure.

[0158] The display device 10D includes a substrate 361, an adhesive layer 363, an insulating layer 365, transistors 301, 3 03, wiring 307, conductive layer 355, insulating layer 314, light emitting element 110B, insulating layer 104, The insulating film 100 includes a protective layer 117, a color conversion layer CCMG, a partition wall 107, an adhesive layer 317, and a substrate 371. .

[0159] The display device 10D is a device in which transistors, light emitting elements, etc. formed on a fabrication substrate are mounted on a substrate 361. The color conversion layer is formed by transposing the Alternatively, a color conversion layer may be formed on the substrate 361 in advance, and then the color conversion layer may be formed on the substrate 361. The substrate may be peeled off and a color conversion layer may be attached to the exposed surface. The structure of the device 10D is such that the color conversion layer 363 is attached to the insulating layer 365 exposed by peeling. It can be formed by bonding a substrate 361 having the layer CCMG and the partition wall 107 together.

[0160] When the color conversion layer is formed on the substrate 361, the layout, structure, and characteristics of the transistors and light-emitting elements are determined. Since the color conversion layer does not affect the properties of the substrate, it is easier to This is preferable because it widens the range of options for the formation method and formation conditions.

[0161] In the pixel that emits green light, the light emitting element 110B is made up of an insulating layer 314, an adhesive layer 363, etc. The blue light emitted from the light emitting element 110B is The conversion layer CCMG converts it into green light, and the green light 106G is extracted to the outside. can be.

[0162] Since the pixel that emits blue light does not have a color conversion layer, the blue light emitted from the light emitting element 110B The blue light 106B is extracted to the outside through the insulating layer 314 and the adhesive layer 363. can be.

[0163] [Transistor] Next, a transistor that can be used in a display device will be described.

[0164] The structure of the transistor included in the display device is not particularly limited. It may be a staggered transistor, or an inverse staggered transistor. In addition, the transistor may be of either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0165] The transistor included in the display device may be, for example, a transistor using a metal oxide in a channel formation region. This allows for the realization of a transistor with extremely low off-state current. It can be realized.

[0166] Alternatively, the transistors included in the display device may include transistors having silicon in their channel formation regions. As the transistor, for example, a transistor having amorphous silicon may be used. a transistor having crystalline silicon (typically, low-temperature polysilicon) Examples of such a transistor include a transistor having single crystal silicon and a transistor having a silicon nitride layer.

[0167] 9(A) and 9(B) show examples of the structure of transistors. Each transistor has an insulating layer 1 The insulating layer 141 is provided between the insulating layer 141 and the insulating layer 208. The insulating layer 141 functions as a base film. The insulating layer 208 preferably functions as a planarization film.

[0168] The transistor 220 shown in FIG. 9A has a bottom semiconductor layer 204 including a metal oxide. The metal oxide can function as an oxide semiconductor. Cut.

[0169] It is preferable to use an oxide semiconductor as the semiconductor of a transistor. By using semiconductor materials with a wide band gap and low carrier density, This is preferable because it can reduce the current in the OFF state.

[0170] The transistor 220 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. The insulating layer 202 and the semiconductor layer 204 are formed on the insulating layer 202. The conductive layer 201 functions as a gate. The semiconductor layer 204 is connected to the conductive layer 204 via the insulating layer 202. The conductive layer 203a and the conductive layer 203b are electrically connected to the semiconductor layer 204. The transistor 220 is covered by an insulating layer 211 and an insulating layer 212. The insulating layer 211 and the insulating layer 212 can be formed using various inorganic insulating films. In particular, an oxide insulating film is suitable for the insulating layer 211, and a nitride insulating film is suitable for the insulating layer 212. A solid insulating film is preferred.

[0171] The transistor 230 shown in FIG. 9B is a top-gate transistor having polysilicon in the semiconductor layer. It is a transistor with a gate structure.

[0172] The transistor 230 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. , a semiconductor layer, and an insulating layer 213. The conductive layer 201 functions as a gate. The layer 202 functions as a gate insulating layer. The semiconductor layer includes a channel forming region 214a and The semiconductor layer further includes a pair of low resistance regions 214b. In FIG. 9B, the channel forming region 214 2 shows an example in which an LDD region 214c is provided between the channel forming region a and the low resistance region 214b. The conductive layer 203a overlaps with the conductive layer 201 through the insulating layer 202. 202 and one of the pair of low resistance regions 214b through an opening provided in the insulating layer 213. Similarly, the conductive layer 203b is electrically connected to the other of the pair of low resistance regions 214b. The insulating layer 213 can be made of various inorganic insulating films. The border layer 213 is preferably a nitride insulating film.

[0173] [Metal oxides] The semiconductor layer is preferably made of a metal oxide that functions as an oxide semiconductor. describes metal oxides that can be applied to the semiconductor layer.

[0174] The metal oxide preferably contains at least indium or zinc. In addition to these, aluminum, gallium, iridium, It is preferable that tritium or tin is contained. Also, boron, titanium, iron, niobium, etc. Nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, one selected from fluorine, tantalum, tungsten, or magnesium, or Multiple types may be included.

[0175] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Here, the element M is aluminum, gallium, yttrium, or Other elements that can be used for element M include boron, titanium, iron, and nickel. Kel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium However, the element M is In some cases, a combination of the above elements may be used.

[0176] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). For example, zinc oxynitride (ZnON) Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0177] In this specification and the like, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. Represents.

[0178] For example, the semiconductor layer is made of CAC (Cloud-Aligned Composite)-O S can be used.

[0179] CAC-OS or CAC-metal oxide is a material that has the function of conductivity in some parts. The material has an insulating function in part and a semiconductor function in the whole. In addition, CAC-OS or CAC-metal oxide is used as the light-emitting layer of the transistor. When used in a material, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making these functions work in a complementary manner, the switching function (On / Off) The function of making the CAC-OS or CAC-metal oxide In CAC-OS or CAC-metal oxide, the respective functions By separating the two, the functions of both can be maximized.

[0180] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0181] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0182] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0183] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0184] Oxide semiconductors (metal oxides) are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and amorphous and oxide semiconductors.

[0185] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. Indicates the point where the direction is changing.

[0186] Nanocrystals are basically hexagonal, but they are not limited to regular hexagonal shapes and may be non-regular hexagonal. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the grain boundary due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high SiO2 content in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by, for example, adjusting the distortion.

[0187] The CAAC-OS also includes a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element M , zinc, and oxygen layers (hereinafter referred to as (M, Zn) layers) are stacked. It is also called a layered structure. Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer and Also, when indium in the In layer is replaced with element M, the (In,M) layer It can also be expressed as:

[0188] CAAC-OS is a metal oxide with high crystallinity. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS has impurities and defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of cations such as cations. Metal oxides with OS have stable physical properties. Metal oxides are heat resistant and highly reliable.

[0189] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range (nm or less). There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be distinguished from a-like OS or amorphous oxide semiconductor. It may be difficult to distinguish between the two.

[0190] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Small crystals (e.g., crystals of a few mm or a few cm) are more likely to be formed than large crystals (here, crystals of a few mm or a few cm). , the nanocrystals mentioned above) may be structurally more stable.

[0191] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. A-like OS has voids or low density areas. The e-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0192] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik The crystalline structure may have two or more of e-OS, nc-OS, and CAAC-OS.

[0193] The metal oxide film functioning as a semiconductor layer is heated by either an inert gas or an oxygen gas. The metal oxide film can be formed by using both of the oxygen flow rate ratio and the oxygen flow rate ratio. However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate ratio (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0194] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the energy is 3 eV or more, and even more preferable that the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0195] The metal oxide film can be formed by a sputtering method. PECVD, thermal CVD, ALD, vacuum deposition, etc. may also be used.

[0196] Materials that can be used for various conductive layers that constitute the display device include aluminum. , titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tungsten Examples include metals such as aluminum or tungsten, or alloys containing these as the main components. In addition, films containing these materials can be used as a single layer or as a laminated structure. For example, a single layer structure of an aluminum film containing silicon, or a structure in which an aluminum film is laminated on a titanium film, Two-layer structure: Two-layer structure with aluminum film laminated on tungsten film, copper-magnesium- Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film , a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film, and An aluminum film or copper film is laminated on top of the aluminum film, and then a titanium film or titanium nitride film is laminated on top of that. Three-layer structure that forms a film: molybdenum film or molybdenum nitride film, and aluminum layer on top of it. A tungsten film or copper film is laminated, and then a molybdenum film or molybdenum nitride film is formed on top of that. There are three-layer structures, etc., which are made up of oxides such as indium oxide, tin oxide, or zinc oxide. Furthermore, when copper containing manganese is used, the controllability of the shape by etching is improved. This is preferable.

[0197] Materials that can be used for the various insulating layers that make up the display device include acrylic, polycarbonate, and the like. Resins such as polyimide, epoxy, and silicone, silicon oxide, silicon oxynitride, and silicon nitride Examples of suitable insulating materials include inorganic insulating materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0198] As described above, the display device of this embodiment is a combination of a blue light emitting element and a color conversion layer. In addition, the number of layers constituting the light-emitting element can be reduced, The manufacturing equipment and process can be simplified. In addition to the image signal to be output, a signal corresponding to the correction data (correction signal) is supplied to the pixel. This allows the desired display to be performed without converting the image data.

[0199] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0200] (Embodiment 2) In this embodiment, a pixel circuit included in a display device according to one embodiment of the present invention will be described with reference to FIGS. 10 to 1. 6 will be used to explain.

[0201] [Display device] 10A shows a block diagram of the display device 15. The display device 15 has a plurality of pixels PIX The display unit 11 has a gate driver 13 and a source driver 14.

[0202] The pixel PIX has at least one memory circuit MEM. The memory circuit MEM can hold the potential of at least one memory node. It may be possible to hold the potential of a plurality of memory nodes connected to the column. Although not shown in the figure, the pixel PIX includes a display element (a light-emitting element in this embodiment) and a display The pixel PIX has a transistor for driving a display element. Signals are given from the pixel PIX via a plurality of wirings GL, and the driving of the pixel PIX is controlled. Signals are given from the source driver 14 via a plurality of wirings DL, and the pixels PIX are driven. is controlled.

[0203] The multiple wirings GL function as scanning lines. The signals transmitted by the wirings GL are scanning signals ( The scanning signal acts as a switch within the pixel PIX. To control the conducting or non-conducting state (on or off) of a functioning transistor The signal transmitted through the wiring GL is output from the gate driver 13.

[0204] The multiple wirings DL function as data lines. The signals transmitted by the wirings DL are data signals. The data signal is also called data, image data, or image signal. The data signal is a signal for displaying an image. The data signal is input to the memory circuit MEM In addition to the signal held in the memory circuit MEM, the signal given later The wiring DL is a wiring for applying a voltage required to drive the pixel PIX, for example, a reference voltage. The signal transmitted through the wiring DL is output from the source driver 14. .

[0205] The memory circuit MEM includes a capacitor and a transistor. The memory circuit has a function of storing a signal given via the memory circuit as a charge (potential) in a capacitor. MEM can later change the potential it holds by applying another signal through the wiring DL. It has the function of holding the voltage obtained by adding up the potentials of the written signals. Capacitive coupling in the elements can be used to add up the signals. The operation of the MEM to store the signal given via the wiring DL as a charge in the capacitance element is called "signal It is also called "holding the number."

[0206] In the display device of this embodiment, since the pixel PIX has a memory circuit MEM, The image data can be corrected.

[0207] [Pixel circuit configuration example 1] The pixel 100 shown in FIG. 10B includes a transistor M1, a transistor M2, a transistor M3, a transistor M4, a transistor M5, a capacitance element C1, a capacitance element C2, and a light-emitting element It has a child 110.

[0208] One of the source and drain of the transistor M1 is electrically connected to one electrode of the capacitance element C2. The other electrode of the capacitance element C2 is connected to the source or drain of the transistor M4. One of the source and drain of the transistor M4 is electrically connected to the The gate of the transistor M2 is electrically connected to the gate of the capacitance element C The other electrode of the capacitance element C1 is electrically connected to one electrode of the transistor M2. The source or drain of the transistor M1 is electrically connected to the source or drain of the transistor M2. One of the drains is electrically connected to one of the source or drain of the transistor M5. The source or drain of the transistor M5 is connected to the source or drain of the transistor M3. is electrically connected to one of the drains of the transistor M5. The other electrode is electrically connected to one electrode of the light emitting element 110. The transistor has a back gate electrically connected to the gate. In this device, the presence or absence of a back gate of a transistor and the connection of the back gate are not particularly limited. Not determined.

[0209] Here, the other electrode of the capacitance element C2, one of the source and drain of the transistor M4, The node to which the gate of the transistor M2 and one electrode of the capacitance element C1 are connected is called a node The other of the source and drain of the transistor M5 and the light emitting element 11 The node to which one electrode of 0 is connected is designated as node ND2.

[0210] The gate of the transistor M1 is electrically connected to the wiring GL1. The gate of the transistor M4 is electrically connected to the wiring GL2. The gate of the transistor M5 is electrically connected to the wiring GL3. The other of the source and the drain of the transistor M1 is electrically connected to a wiring DL1. The other of the source and the drain of the transistor M3 is electrically connected to the wiring V0. The other of the source and the drain of the transistor M4 is electrically connected to the wiring DLW1.

[0211] The other of the source and drain of the transistor M2 is electrically connected to the power supply line 187 (high potential). The other electrode of the light emitting element 110 is electrically connected to the common wiring 189. The common wiring 189 can be supplied with any potential.

[0212] The wiring GL1, GL2, and GL3 function as signal lines to control the operation of the transistors. The wiring DL1 functions as a signal line that supplies an image signal to the pixel. The wiring DLW1 can be used to write data to the memory circuit MEM. The wiring DLW1 can function as a signal line for supplying a correction signal to the pixel. The wiring V0 can function as a signal line for controlling the electrical characteristics of the transistor M4. It also functions as a monitor line to acquire the voltage from the wiring V0 to the transistor M3 By supplying a specific potential to one electrode of the capacitance element C1 via It can also stabilize the load.

[0213] The transistor M2, the transistor M4, and the capacitive element C2 constitute a memory circuit MEM. The node ND1 is a storage node, and by making the transistor M4 conductive, the wiring DLW The signal supplied to node ND1 can be written to node ND1. By using a transistor with low off-state current, the potential of the node ND1 can be held for a long time. can be done.

[0214] The transistor M4 is, for example, a transistor ( Hereinafter, an OS transistor (OS transistor) can be used. The current can be made extremely low, and the potential of the node ND1 can be maintained for a long period of time. In this case, OS transistors can also be used for other transistors that make up the pixel. For specific examples of the metal oxide, see Embodiment 1. CAAC-OS has a crystal structure. The constituent atoms are stable, making it suitable for transistors where reliability is important. -OS exhibits high mobility characteristics, making it suitable for transistors that operate at high speeds.

[0215] OS transistors have a large energy gap and therefore exhibit extremely low off-state current. In addition, OS transistors have the following drawbacks: impact ionization, avalanche breakdown, and short-channel effects. The transistors that have Si in the channel formation region (hereinafter referred to as Si transistors) do not produce any effects. It has different characteristics from the conventional resistors and can form highly reliable circuits.

[0216] In addition, a Si transistor may be used for the transistor M4. It is also preferable to use Si transistors for the other transistors used.

[0217] Si transistors include transistors with amorphous silicon and crystalline silicon. transistors having a silicon (typically low-temperature polysilicon), Examples include transistors.

[0218] Furthermore, one pixel may have both an OS transistor and a Si transistor. .

[0219] In the pixel, the signal written to the node ND1 is converted into the image signal supplied from the line DL1. The transistor M1 is capacitively coupled to the pixel and can be output to the node ND2. The transistor M5 can have a function of selecting the light emitting element 110. It can function as a switch that controls the

[0220] For example, when a signal written to the node ND1 from the wiring DLW1 is Pressure (V th ), the transistor M2 becomes conductive before the image signal is written. Therefore, the transistor M5 is provided, and the node ND1 After the potential of the transistor M5 is established, the transistor M5 is turned on to cause the light emitting element 110 to emit light. is preferred.

[0221] That is, if a desired correction signal is stored in the node ND1, the correction signal is applied to the supplied image signal. A positive signal can be added. Note that the correction signal may be attenuated by elements on the transmission path. Therefore, it is preferable to generate the signal taking this attenuation into consideration.

[0222] Using the timing charts shown in FIGS. 11(A) and 11(B), the image shown in FIG. 10(B) The operation of the element 100 will be described in detail. The correction signal (Vp) supplied to the wiring DLW1 is Any positive or negative signal can be used, but the case where a positive signal is supplied will be described here. In the following explanation and timing chart, high potential is referred to as "H" and low potential is referred to as " In this embodiment, an ideal operation is explained, and potential distribution, coupling, or Regarding losses, detailed changes in potential due to circuit configuration, operation timing, etc. must be taken into consideration. stomach.

[0223] First, the operation of writing the correction signal (Vp) to the node ND1 will be explained using FIG. 11(A). This operation may be performed for each frame, and is performed at least once before supplying the image signal. Also, a refresh operation is performed as needed, and the same correction signal is written to the node ND1. You can rewrite it.

[0224] At time T1, the potential of the wiring GL1 is set to "H", the potential of the wiring GL2 is set to "L", and the potential of the wiring GL3 is set to When the potential of the wiring DL1 is set to "L", the transistor M1 is turned on and the capacitance element C2 The potential of the other electrode becomes "L".

[0225] This operation is a reset operation for performing a subsequent capacitive coupling operation. The light emitting element 110 in the previous frame is still emitting light, but the reset operation Therefore, the potential of the node ND1 changes, and the current flowing through the light emitting element 110 changes. It is preferable to make the resistor M5 non-conductive and stop the light emitting element 110 from emitting light.

[0226] At time T2, the potential of the wiring GL1 is set to "H", the potential of the wiring GL2 is set to "H", and the potential of the wiring GL3 is set to When the potential of the wiring DLW1 is set to "L", the transistor M4 is turned on and the wiring DLW1 The potential (correction signal (Vp)) is written to the node ND1.

[0227] At time T3, the potential of the wiring GL1 is set to "H", the potential of the wiring GL2 is set to "L", and the potential of the wiring GL3 is set to When the potential of the wiring DL1 is set to "L", the transistor M4 is turned off and the node The correction signal (Vp) is held in ND1.

[0228] At time T4, the potential of the wiring GL1 is set to "L", the potential of the wiring GL2 is set to "L", and the potential of the wiring GL3 is set to "L". When the potential of the wiring DL1 is set to "L", the transistor M1 is turned off and the correction signal The write operation of the signal (Vp) is completed.

[0229] Next, referring to FIG. 11B, the correction operation of the image signal (Vs) and the operation of making the light emitting element 110 emit light are performed. The operation will be explained below.

[0230] At time T11, the potential of the wiring GL1 is set to "H", the potential of the wiring GL2 is set to "L", and the potential of the wiring GL3 is set to "L". When the potential of the wiring DLW1 is set to "L", the transistor M1 is turned on and the capacitance element The potential of the wiring DL1 is added to the potential of the node ND1 by the capacitive coupling of C2. The node ND1 has a potential (Vs+Vp) obtained by adding a correction signal (Vp) to the image signal (Vs). This becomes:

[0231] At time T12, the potential of the wiring GL1 is set to "L", the potential of the wiring GL2 is set to "L", and the potential of the wiring GL3 is set to "L". When the potential of the wiring DLW1 is set to "L", the transistor M1 is turned off and the The potential of the node ND1 is determined to be Vs+Vp.

[0232] At time T13, the potential of the wiring GL1 is set to "L", the potential of the wiring GL2 is set to "L", and the potential of the wiring GL3 is set to "L". When the potential of the wiring DLW1 is set to "H" and the potential of the wiring DLW2 is set to "L", the transistor M5 is turned on and the node The potential of ND2 becomes Vs+Vp, and the light emitting element 110 emits light. The potential of D2 is Vs+Vp to the threshold voltage of transistor M2 (V th ) is lower than the However, here we will use V th is set to a value that is small enough to be ignored.

[0233] The above is the operation of correcting the image signal (Vs) and the operation of making the light emitting element 110 emit light. The write operation of the correction signal (Vp) and the input operation of the image signal (Vs) are performed consecutively. However, it is better to write the correction signal (Vp) to all pixels and then write the image signal (Vs) to the pixels. In one embodiment of the present invention, the same image signal is input to a plurality of pixels simultaneously. Therefore, the correction signal (Vp) can be written to all pixels first. Speed ​​can be improved.

[0234] [Pixel circuit configuration example 2] Next, a pixel circuit in which a plurality of storage nodes are connected in series will be described. can operate the light emitting element according to the sum of a plurality of input data.

[0235] The pixel 101 shown in FIG. 12A has two capacitance elements, and can be connected to a maximum of three devices by capacitive coupling. It is possible to display according to the sum of the data.

[0236] FIG. 12(A) shows a configuration in which two capacitance elements are connected in series, but FIG. 12(B) shows a configuration in which two capacitance elements are connected in series. As a result, more capacitance elements C1 to C n In this case, the capacitance element Each time a transistor is added, a transistor is also added. One of the drains is electrically connected to the wiring that connects one capacitance element and the other capacitance element. In other words, the number of nodes such as node ND12 increases.

[0237] The number n of capacitance elements connected in series is preferably 2 or more and 8 or less, more preferably 2 or more and 6 or less. The greater the number of capacitors, the greater the effect of one embodiment of the present invention. However, as the number of capacitance elements increases, the number of transistors and signal lines also increases. This increases the pixel aperture ratio, reduces resolution, and makes it difficult to ensure signal input time. Therefore, the number of capacitance elements connected in series, n, should be set to the value specified above depending on the application. It is preferable to select from a range.

[0238] The pixel 101 shown in FIG. 12A includes a transistor M11, a transistor M12, and a transistor The circuit includes a capacitor M13, a capacitor C11, a capacitor C12, and a circuit block 150. The block 150 may include a transistor, a capacitor, a light emitting element, and the like. The circuit block 150 will be described in detail later.

[0239] One of the source and drain of the transistor M11 is connected to one electrode of the capacitance element C11. One electrode of the capacitance element C11 is electrically connected to the circuit block 150. The other electrode of the capacitance element C11 is connected to the source or drain of the transistor M12. One of the source and drain of the transistor M12 is electrically connected to the capacitor The other electrode of the capacitance element C12 is electrically connected to one electrode of the capacitance element C12. It is electrically connected to either the source or the drain of transistor M13.

[0240] Here, the voltage at either the source or drain of the transistor M11 and the voltage at either end of the capacitance element C11 are The wiring to which the pole and the circuit block 150 are connected is referred to as a node ND13. The element of the circuit block 150 connected to D13 makes the node ND13 floating. The other electrode of the capacitance element C11, the source of the transistor M12, or The wiring to which one of the drain electrodes and one of the electrodes of the capacitance element C12 are connected is referred to as a node ND12. In addition, one of the source and drain of the transistor M13 and the other of the capacitance element C12 The wiring to which one electrode is connected is designated as node ND11.

[0241] The gate of the transistor M11 is electrically connected to the wiring GL11. The gate of the transistor M2 is electrically connected to the wiring GL12. The other of the source and drain of the transistor M11 is electrically connected to the line GL13. , and is electrically connected to the wiring DL11. The source or drain of the transistor M13 is electrically connected to the wiring DL12. The other end is electrically connected to the wiring DL13.

[0242] Wires GL11, GL12, and GL13 are used as signal lines to control the operation of the transistors. The wiring DL11 can function as a signal line for supplying the first data. The wiring DL12 can have the function of serving as a signal line for supplying second data. The wiring DL13 can function as a signal line for supplying third data. It can have the ability.

[0243] The nodes ND11, ND12, and ND13 are storage nodes. By making the node M11 conductive, the first data supplied to the wiring DL11 is transferred to the node ND13 By making the transistor M11 non-conductive, the first data can be written to the The voltage can be held in the node ND13. Also, by turning on the transistor M12, The second data supplied to the line DL12 can be written to the node ND12. By making the transistor M12 non-conductive, the second data can be held in the node ND12. Moreover, by making the transistor M13 conductive, the third voltage supplied to the wiring DL13 can be The data can be written to the node ND11. The transistor M13 is turned off. This allows the third data to be stored in the node ND11.

[0244] Transistors M11, M12, and M13 have extremely low off-state current. Therefore, it is possible to hold the potentials of the nodes ND13 and ND12 for a long time. The transistor can be an OS transistor.

[0245] Note that an OS transistor may be used as another transistor included in the pixel. A silicon transistor may be used as the transistor in the pixel. Both Si and GaN transistors may be used.

[0246] Using the timing charts shown in FIGS. 13(A), 13(B), and 13(C), An example of the operation of the pixel 101 for adding the second data and the third data to the data will be described. In the following description, the first data is referred to as “V data1 ", the second data "V d ata2 ", the third data "V data3 ". Also, one of the reference potentials (for example, 0 V, GND potential, or a specific potential) to “V ref ". The first data, the second data, The first data and the third data may each be a negative value, and may also be subjected to subtraction of data. Respond.

[0247] First, the first data “V data1 " to node ND13 The operation will be explained.

[0248] At time T1, the potential of the wiring GL11 is set to "H", the potential of the wiring GL12 is set to "H", and the potential of the wiring DL11 is set to "H". The potential is “V data1 ", and the potential of the wiring DL12 is set to "V ref ", then transistor M 12 is conductive, and the potential of node ND12 becomes “V ref This operation is called the capacitive coupling. This is a reset operation to perform the operation.

[0249] Also, the transistor M11 is turned on, and the potential of the wiring DL11 (first data Ta “V data1 ") is written.

[0250] At time T2, the potential of the wiring GL11 is set to "L" and the potential of the wiring GL12 is set to "L." The transistors M11 and M12 become non-conductive, and the first data " V data1 " is held in the capacitance element C11. data1 -V ref ” is maintained.

[0251] This is the first data “V data1 This is a write operation of ". If you do not want to display the first data, data1 " as "V ref " the same All you need to do is supply the position.

[0252] Next, using FIG. 13(B), the second data “V data2 " to node ND12. The operation of inserting the data will be described below.

[0253] At time T11, the potential of the wiring GL12 is set to "H", the potential of the wiring GL13 is set to "H", and the potential of the wiring DL12 is set to "H". The potential of "V data2 ", and the potential of the wiring DL13 is set to "V ref ", then the transistor M13 is conductive, and the potential of node ND11 is “V ref This operation is This is a reset operation for performing a matching operation.

[0254] Furthermore, the transistor M12 is turned on, and the potential of the wiring DL12 (second data Ta “V data2 ") is written.

[0255] At this time, the potential of the node ND13 is increased by the potential of the node ND12 due to the capacitive coupling of the capacitive element C11. Therefore, the potential of the node ND13 is "V data1 -V ref +V d ata2 " and "V ref If "=0, the potential of the node ND13 is "V data1 +V data2 "

[0256] At time T12, when the potential of the wiring GL12 is set to "L" and the potential of the wiring GL13 is set to "L", The transistor M12 becomes non-conductive, and the second data “V data2 " is held In addition, the node ND13 receives "V data 1+V data2 " is held in the capacitance element C12. data2 -V ref " is retained.

[0257] This is the second data “V data2 This is a write operation of ". If you do not want to display it, use the second data "V data2 " as "V ref " the same All you need to do is supply the position.

[0258] Next, using FIG. 13(C), the third data “V data3 This explains the operation of writing do.

[0259] At time T21, the potential of the wiring GL13 is set to “H” and the potential of the wiring DL13 is set to “V data3 " When this occurs, the transistor M13 becomes conductive, and the potential of the node ND11 becomes "V data3 "

[0260] At this time, the potential of the node ND12 is increased by the capacitive coupling of the capacitive element C12. Therefore, the potential of the node ND12 is "V data2 -V ref +V d ata3 " and "V ref If "=0, the potential of node ND12 is "V data2 +V data3 "

[0261] Furthermore, the potential of the node ND12 is connected to the potential of the node ND13 by capacitive coupling of the capacitor C11. Therefore, the potential of the node ND12 is "V data1 +V data2 +V d ata3 "

[0262] At time T22, when the potential of the wiring GL13 is set to "L", the transistor M13 becomes non-conductive. The potential of node ND13 is “V data1 +V data2 +V data3 " is held in .

[0263] As a result, the first data “V data1 ", the second data "V data2 ", and the third Data of "V data3The writing operation of " is completed. The third data is reflected in the display. If you do not want to data3 " as "V ref " and supply the same potential. Alternatively, the third data write operation may be omitted.

[0264] After that, in the light emitting element included in the circuit block 150, Depending on the configuration of the circuit block, the display operation is performed from time T1 or time T11. A display operation may also be performed.

[0265] As shown in FIGS. 14(A), 14(B), and 14(C), the movement shown in FIG. 13(A) The order of the operations shown in FIG. 13(B) may be reversed.

[0266] Using FIG. 14(A), the first data “V data2 " to node ND12. explain.

[0267] At time T1, the potential of the wiring GL12 is set to "H", the potential of the wiring GL13 is set to "H", and the potential of the wiring DL12 is set to "H". The potential is “V data2 ", and the potential of the wiring DL13 is set to "V ref ", then transistor M 13 is conductive, and the potential of node ND11 becomes “V ref " Also, transistor M12 is turned on, and the potential of the wiring DL12 (the second data “V data2 ") is written Get sucked in.

[0268] At time T2, if the potential of the wiring GL12 is set to "L" and the potential of the wiring GL13 is set to "L", The transistors M12 and M13 become non-conductive, and the node ND12 receives the second data " V data2 " is held in the capacitance element C12.data2 -V ref ” is maintained.

[0269] Next, using FIG. 14(B), the first data “V data1 " to node ND13 The operation of inserting the data will be described below.

[0270] At time T11, the potential of the wiring GL11 is set to "H", the potential of the wiring GL12 is set to "H", and the potential of the wiring DL11 is set to "H". The potential of "V data1 ", and the potential of the wiring DL12 is set to "V ref ", then the transistor M12 is conductive, and the potential of node ND12 is “V ref " Also, transistor M1 1 is turned on, and the potential of the wiring DL11 (first data “V data1 ")but It will be written.

[0271] At time T12, the potential of the wiring GL11 is set to "L" and the potential of the wiring GL12 is set to "L." Transistor M12 becomes non-conductive, and node ND12 is set to "V ref " is maintained. The first data “V data1 " is held. Also, the capacitance element C12 "V" data2 -V ref " is held, so "V ref If "=0, The potential of the board ND11 is "-V data2 "

[0272] Next, using FIG. 14(C), the third data “V data3 This explains the operation of writing do.

[0273] At time T21, the potential of the wiring GL13 is set to “H” and the potential of the wiring DL13 is set to “V data3 " When this occurs, the transistor M13 becomes conductive, and the potential of the node ND11 becomes "V data3 "

[0274] At this time, the potential of the node ND12 is increased by the capacitive coupling of the capacitive element C12. Therefore, the potential of the node ND12 is "V data3 -(-V data 2)+V ref " and "V ref If "=0, the potential of node ND12 is "V da ta2 +V data3 "

[0275] Furthermore, the potential of the node ND12 is connected to the potential of the node ND13 by capacitive coupling of the capacitor C11. Therefore, the potential of the node ND13 is "V data1 +V data2 +V d ata3 "

[0276] At time T22, when the potential of the wiring GL13 is set to "L", the transistor M13 becomes non-conductive. The potential of node ND13 is “V data1 +V data2 +V data3 " is held in .

[0277] As a result, the first data “V data1 ", the second data "V data2 ", and the third Data of "V data3 The write operation of " is completed.

[0278] The operations in Figures 13(A), 13(B), and 13(C) are performed consecutively within one horizontal period. Alternatively, the operation of FIG. 13(A) can be performed in the k-th frame (k is a natural number), The operations of FIG. 13(B) and FIG. 13(C) may be performed in the (k+1)th frame. 3(A) and 13(B) are performed in the k-th frame, and the operation of FIG. 13(C) is performed in the k+1-th frame. Alternatively, the operations shown in Figs. 13(A), 13(B), and 13(C) may be performed in the frame. Alternatively, the operation of FIG. 13(A) may be performed in different consecutive frames. 13(B) and 13(C) are repeated from the k+1th frame onwards. Alternatively, the operations in Fig. 13(A) and Fig. 13(B) may be performed in the k-th frame. Alternatively, the operation of FIG. 13(C) may be repeated from the k+1th frame onwards. The operations of Fig. 14(A), Fig. 14(B), and Fig. 14(C) can be performed in the same manner.

[0279] 15(A) to 15(C) show specific examples of the circuit block 150. FIG.

[0280] The circuit block 150 shown in FIG. 15A includes a transistor 171, a capacitor 173, and The transistor 171 has a light-emitting element 110. One of the source and the drain of the transistor 171 is connected to the light-emitting element 110. One electrode of the light emitting element 110 is electrically connected to one electrode of the capacitor element 110. The other electrode of the capacitor 173 is electrically connected to one electrode of the transistor 174. The gate of the transistor 171 is electrically connected to the node ND1. 3 is electrically connected to

[0281] The other of the source and drain of the transistor 171 is electrically connected to the power supply line 187 (high potential). The other electrode of the light emitting element 110 is electrically connected to a common wiring 189. The common wiring 189 can be supplied with any potential (for example, a low potential).

[0282] In the configuration shown in FIG. 15A, the potential of the node ND13 is equal to the threshold voltage of the transistor 171. When the voltage exceeds the threshold voltage, a current flows through the light emitting element 110. 4(A), the light emitting element 110 starts emitting light at time T1. In some cases, the use may be limited.

[0283] FIG. 15B shows a configuration in which a transistor 172 is added to the configuration of FIG. 15A. One of the source or drain of transistor 172 is connected to the source or drain of transistor 171. The other of the source and drain of the transistor 172 is electrically connected to the other of the source and drain of the transistor 172. The gate of the transistor 172 is electrically connected to the wiring 186. The wiring 186 serves as a signal line for controlling the conduction of the transistor 172. It can have all the functions.

[0284] In this configuration, the potential of the node ND13 is equal to or higher than the threshold voltage of the transistor 171. When the transistor 172 is turned on, a current flows through the light emitting element 110. 13(C), the light emitting element 110 after time T22 in the timing chart shown in FIG. 14(C). This allows for the start of light emission and is suitable for operations involving correction.

[0285] FIG. 15C shows a configuration in which a transistor 175 is added to the configuration of FIG. 15B. One of the source or drain of transistor 175 is connected to the source or drain of transistor 171. The other of the source and drain of the transistor 175 is electrically connected to the other of the source and drain of the transistor 175. The gate of the transistor 175 is electrically connected to a wiring 191. The wiring 191 serves as a signal line for controlling the conduction of the transistor 175. The gate of the transistor 175 is electrically connected to the wiring GL13. may be connected indirectly.

[0286] The wiring 190 can be electrically connected to a source of a particular potential, such as a reference potential. A specific potential is applied to either the source or drain of transistor 171 from line 190. This also makes it possible to stabilize the writing of image data.

[0287] The wiring 190 can be connected to the circuit 120 and can function as a monitor line. The circuit 120 has the function of supplying the specific potential, the electric potential of the transistor 171, and the like. The device may have one or more functions of acquiring characteristics and generating correction data.

[0288] When the wiring 190 is made to function as a monitor line, for example, the data to be written to the node ND13 is The potential for correcting the threshold voltage of the transistor 171 can be generated by the circuit 120. can.

[0289] Next, the image data correction operation will be described with reference to FIGS. 16(A) and 16(B).

[0290] FIG. 16(A) shows inputs to four pixels (P1 to P4) arranged in a 2×2 matrix. The generated image data is the first data (+A1 , +A2, -A1, A0), the second data (+B1, B0, B0, -B1), the third data The sum of the first to third data (+C3, C2, C2, +C1) is used for each pixel. The image data can be displayed according to the image data, and the original image data can be corrected.

[0291] For example, the first data and the second data may be correction data. The third data may be the original image data.

[0292] By combining this correction data with image data, up-conversion, HDR Display, correction of display irregularities inherent to display devices, correction of threshold voltage of transistors in pixels Alternatively, these can be combined.

[0293] In up-conversion, for example, the same image data is supplied to all four pixels, and correction data is This allows each pixel to display a different image. For example, 8K4K pixel count Image data applied to one specific pixel of 4K2K data for specific four pixels of a display device having the The image is then displayed by inputting correction data to each pixel, improving the resolution. It is possible.

[0294] In addition, by using the same image data as the first to third data, the brightness of the displayed image can be adjusted. In this operation, the voltage exceeding the maximum output value of the drive circuit is displayed. This not only improves image quality but also reduces power consumption and allows for cheaper drivers. It is also possible to reduce product costs by using driver IC chips, etc.

[0295] In a broad sense, it is a correction of image data, but it can also be used to display different images superimposed on each other. FIG. 16(B) shows an image on the entire display unit, and shows the first image made up of the first data. , a second image composed of the second data, a third image composed of the third data, and a first image. 1 shows an image obtained by combining the first, second, and third images.

[0296] Such a combination of different image data can be used, for example, to insert text or to create an AR (Augmented Reality) image. This can be applied to displays such as Virtual Reality.

[0297] As described above, the light emitting element is controlled by using the image signal (image data) and the correction signal (data for correction). By emitting light, the current flowing through the light-emitting element can be increased, resulting in high brightness. This allows for up-conversion of images, partial or full image resolution in the display area, It can perform image correction such as HDR display that corrects the image quality or improving the brightness of the displayed image. In addition, multiple images can be displayed overlapping each other. Since a voltage equal to or higher than the source driver voltage can be applied as the gate voltage of the drive transistor, This can reduce power consumption.

[0298] This embodiment mode can be combined with other embodiment modes as appropriate.

[0299] (Embodiment 3) In this embodiment mode, materials that can be used for a light-emitting element will be described.

[0300] [Light-emitting element materials] Examples of materials that can be used for each layer of the light-emitting element shown in FIG. 4 are listed below. The layer is not limited to a single layer, but may be a laminate of two or more layers.

[0301] <First electrode and second electrode> The materials for forming the first electrode 1101 and the second electrode 1102 are the same as those for the above-mentioned electrodes. If the required function can be met, the following materials can be used in combination. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, In-Sn oxide (also called ITO), In-Si-Sn oxide (IT SO), In-Zn oxide, and In-W-Zn oxide. Aluminum (Al), Titanium (Ti), Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni), Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten Tin (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium It uses metals such as yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations. Other elements not listed above that belong to Group 1 or Group 2 of the periodic table can also be used. (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and other rare earth metals and their An alloy containing an appropriate combination of these, graphene, etc. can be used.

[0302] <Light-emitting layer> The light-emitting layer 1113 is a layer containing a light-emitting substance. For example, fluorescent materials, phosphorescent materials, TADF materials, quantum dot materials, metal halide materials, Genperovskites can be used as luminescent materials.

[0303] Pyrene derivatives have a high luminescence quantum yield and are suitable as fluorescent materials that emit blue light. Specific examples of the phenyl derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[ 3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine N,N'-diphenyl-N,N'-bis[ 4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine N,N'-bis(dibenzofuran-2-yl)-N ,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N' -Bis(dibenzothiophen-2-yl)-N,N'-diphenylpyrene-1,6-diazo amine (abbreviation: 1,6ThAPrn), N,N'-(pyren-1,6-diyl)bis[(N -phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6B nfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[ b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02 ), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]na 1,6BnfAPrn-03, etc. Examples include:

[0304] Furthermore, a polymer compound can also be used for the light-emitting layer 1113. For example, The material is poly(9,9-dioctylfluorene-2,7-diyl) (abbreviation: POF). , poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,5-dimethacrylate] dimethylaminobenzoate-1,4-diyl)] (abbreviation: PF-DMOP), poly{(9,9-dioxo- N,N'-di-(p-butylphenyl)- 1,4-diaminobenzene]} (abbreviation: TAB-PFH), etc.

[0305] It has a blue or green color and the peak wavelength of the emission spectrum is between 450 nm and 570 nm. Some phosphorescent materials include the following:

[0306] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrp)] tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl [Ir(iPr5 btz)3]), organometallic complexes with a 4H-triazole skeleton, such as tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato ]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl Iridium(II) I) (abbreviation: [Ir(Prtz1-Me)3]) Organometallic complexes containing fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl]propanol [phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Ir(dmpimpt-Me)3 organometallic complexes with imidazole skeletons, such as bis[2-(4',6'-difluoromethyl] (O-phenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazoline) aryl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pi Lysinato-N,C 2’ ] Iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’ }Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]) , bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium (III) Acetylacetonate (abbreviation: FIr(acac)) Examples of suitable organometallic complexes include those having phenylpyridine derivatives as ligands.

[0307] In addition, blue luminescent materials are those with a photoluminescence peak wavelength of 430 nm or more. Materials with a wavelength of 70 nm or less are preferred, and materials with a wavelength of 430 nm to 460 nm are more preferred. Photoluminescence measurement may be performed on either a solution or a thin film.

[0308] By using such compounds in combination with the microcavity effect, the above-mentioned colors can be more easily obtained. At this time, the semi-transparent film required to obtain the microcavity effect can be obtained. The thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm or more and 40 nm or less. The thickness is greater than 25 nm and less than 40 nm. However, if the thickness exceeds 40 nm, the efficiency will decrease. There is a possibility that this may happen.

[0309] The light-emitting layer 1113 contains one or more organic compounds ( The organic compound may contain a light-emitting material (host material, assist material). Materials with larger energy gaps can be used. In addition, the one or more organic compounds may be compounds that readily accept holes (hole transport The material is a compound that easily accepts electrons (electron transport material), or both. It is possible.

[0310] When the light-emitting substance is a fluorescent material, the host material should have an energy level of 0.05 to 0.15 in the singlet excited state. It is preferable to use an organic compound having a large energy level and a small energy level in the triplet excited state. For example, it is preferable to use an anthracene derivative or a tetracene derivative. -phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carba PCzPA (abbreviation: PCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl -9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthraquinone] 7-[4-(10-phenyl)phenyl]-9H-carbazole (abbreviation: CzPA), [c,g]carbazole (abbreviation: c gDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl- 10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl} Anthracene (abbreviation: FLPPA), 5,12-diphenyltetracene, 5,12-bis (biphenyl-2-yl)tetracene.

[0311] When the light-emitting material is a phosphorescent material, the host material is a material that has triplet excitation energy of the light-emitting material. (energy difference between the ground state and the triplet excited state) In this case, zinc-based metal complexes, aluminum-based metal complexes, etc. Complexes, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quino dibenzoquinoxaline derivatives, dibenzothiophene derivatives, ... Orchid derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives , phenanthroline derivatives, aromatic amines, carbazole derivatives, etc. can be used. .

[0312] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (BeBq 2) Bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq ), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPB O), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBT Z), 2-(4-biphenylyl)-5-(4-tert-butylphenyl) )-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-ter t-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: O XD-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl) phenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3, 5-benzenetriyl)-tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), bathophenanthroline (abbreviated as BPhen), bathocuproine (abbreviated as B CP), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenyl Nanthroline (abbreviation: NBphen), 9-[4-(5-phenyl-1,3,4-oxa Diazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11) and other heterocyclic Examples of suitable amine compounds include aromatic amine compounds such as cyclic compounds, NPB, TPD, and BSPB.

[0313] In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, di Condensed polycyclic aromatic compounds such as benzo[g,p]chrysene derivatives are included. ,10-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[ 4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (Abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4 -(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3 -amine (abbreviation: PCAPBA), 9,10-diphenyl-2-[N-phenyl-N-( 9-phenyl-9H-carbazol-3-yl)amino]anthracene (abbreviation: 2PCA PA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N', N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2 ,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9 -anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 3,6-diphenyl Phenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo (abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene DPPA), 9,10-di(2-naphthyl)anthracene (DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuD NA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3 '-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4' -diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) Benzene (abbreviation: TPB3) and the like can be used.

[0314] In addition, when a plurality of organic compounds are used in the light-emitting layer 1113, it is preferable to use a compound that forms an exciplex. It is preferable to use it in a mixture with an optical substance. In this case, various organic compounds are appropriately combined. However, in order to efficiently form an exciplex, a hole transport material and an electron transport material are required. It is particularly preferable to combine it with a molecular transporting material.

[0315] TADF materials are materials that convert triplet excited states into singlet excited states using a small amount of thermal energy. It is possible to convert the electrons into electrons (reverse intersystem crossing) and efficiently emit light (fluorescence) from the singlet excited state. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are three The energy difference between the doublet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably The delayed fluorescence in TADF materials is between 0 eV and 0.1 eV. The light is an emission that has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. The lifespan of -6 seconds or more, preferably 10 -3 More than a second.

[0316] TADF materials include, for example, fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include metal-containing porphyrins containing Pd, etc. For example, protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)) , mesoporphyrin-tin fluoride complex (abbreviated as SnF2(Meso IX)), hematopoietin Hematoxyl tin fluoride complex (abbreviated as SnF2 (Hemato IX)), coproporf Fluorine tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III- 4Me), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)) , etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), octaethene Examples include thylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0317] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-T RZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-3-yl] 4,6-diphenyl-1,3,5-triazine (abbreviated as '4,6-diphenyl-1,3,5-triazine- ...') Name: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl ]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4 -(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5- Diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-diphenyl Methyl-9H-acridin-10-yl)-9H-xanthen-9-one (Acr XTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl] Sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[a π-electron permeation of clidin-9,9'-anthracene]-10'-one (abbreviation: ACRSA) Heterocyclic compounds having a π-electron-deficient heteroaromatic ring and a π-electron-deficient heteroaromatic ring can be used. In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is called a π The electron-rich heteroaromatic ring has strong donor properties, while the π-electron-deficient heteroaromatic ring has strong acceptor properties. This is particularly preferable because the energy difference between the singlet excited state and the triplet excited state is small. .

[0318] When using a TADF material, it can also be used in combination with other organic compounds.

[0319] <Hole injection layer and hole transport layer> The hole injection layer 1111 is connected to the first electrode 1101, which is the anode, or the charge generation layer 1109. This is a layer that injects holes into the L layer 1103B or the light-emitting unit 1123B. This layer contains a material with high hole injection properties.

[0320] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples of oxides of transition metals include oxides of tungsten, manganese, and the like. Phthalocyanine (abbreviated as HPc) and copper phthalocyanine (abbreviated as CuPc) The 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenyl N,N'-bis[4-[bis(3-methylphenyl)amino]biphenyl (abbreviation: DPAB), (phenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4, Aromatic amine compounds such as 4'-diamine (abbreviated as DNTPD) or poly(3,4-ene) PEDOT / PSS ) and other polymers can be used.

[0321] In addition, materials with high hole injection properties include hole transport materials and acceptor materials (electron acceptor materials). In this case, a composite material containing an acceptor material can be used. Electrons are extracted from the hole transport material, generating holes in the hole injection layer 1111, and the hole transport layer 1 Holes are injected into the light-emitting layer 1113 through the hole injection layer 1112. Formed from a single layer of a composite material containing a transport material and an acceptor material (electron-accepting material) However, the hole transport material and the acceptor material (electron acceptor material) may be separately used. The layer may be formed by laminating the above layers.

[0322] The hole transport layer 1112 is formed by the hole injection layer 1111. The hole transport layer 1112 is a layer that transports the holes to the light emitting layer 1113. The hole transport material used for the hole transport layer 1112 is a layer containing a material. It is preferable to use a material having a HOMO level that is the same as or close to the HOMO level of 111. I wish.

[0323] The acceptor material used for the hole injection layer 1111 is a material of Group 4 of the periodic table. Oxides of metals belonging to Groups 1 to 8 can be used. Specifically, molybdenum oxide, oxide Vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere. It is preferred because it has low hygroscopicity and is easy to handle. Other examples include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used. Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano -1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) You can be there.

[0324] The hole transporting material used for the hole injection layer 1111 and the hole transport layer 1112 is 10 -6 cm 2 A material having a hole mobility of / Vs or more is preferred. Any other substance with a high conductivity may be used.

[0325] As hole transport materials, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, Indole derivatives) and aromatic amine compounds are preferred, and specific examples include 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-N PD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'- Biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro- 9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSP B), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl) Triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl- 9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 3-[ 4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene- 2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N -(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-2-yl)] 9,9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole -3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)- 4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: P CBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carba (3-phenyl-2-azol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N -phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl] Fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl -9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluorene-2-a PCBASF (abbreviation: PCBASF), 4,4',4''-tris(carbazol-9-yl)trimethylsilyl Triphenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N-diphenyl) amino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-( 3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA ), compounds with aromatic amine skeletons such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3 ,6-Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzT P), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 3- [N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenyl Carbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole [N-phenyl-3-yl]-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPC A2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)a amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris[4 -(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-furan (phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), etc. Compounds with a carbazole skeleton, 4,4',4''-(benzene-1,3,5-trimethylsilyl) yl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl- 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene DBTFLP-III, 4-[4-(9-phenyl-9H-fluorene-9 -yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Which compound has a thiophene skeleton, 4,4',4''-(benzene-1,3,5-trimethylsilyl) 4-[3-[3-(9-furanyl)tri(dibenzofuran)(abbreviation: DBF3P-II) (phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: m Examples include compounds with a furan skeleton such as mDBFFLBi-II).

[0326] Furthermore, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenyl ether) Nylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis (phenyl)benzidine (abbreviated as Poly-TPD) It is also possible.

[0327] However, the hole transport material is not limited to the above, and one or more of various known materials may be used. The hole-transporting material is used in combination in the hole injection layer 1111 and the hole transport layer 1112. It is possible.

[0328] <Electron transport layer> The electron transport layer 1114 is formed by the electron injection layer 1115, which receives electrons injected from the second electrode 1102. The electron transport layer 1114 is a layer that transports the electrons to the light emitting layer 1113. The electron transporting material used for the electron transporting layer 1114 is a layer containing a 1×10 -6 cm 2 It is preferable that the material has an electron mobility of 1 / Vs or more. Any other suitable substance may be used.

[0329] Electron transporting materials include quinoline ligands, benzoquinoline ligands, and oxazole ligands. or metal complexes having thiazole ligands, oxadiazole derivatives, triazoles derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, etc. In addition, π-electron deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds can be used. It is also possible.

[0330] Specifically, Alq3, tris(4-methyl-8-quinolinolato)aluminum(III ) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (II) (abbreviation: BeBq2), BAlq, Zn(BOX)2, bis[2-(2-hydrogen Metal complexes such as [(2-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)2), -(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxa Diazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)- 1,3,4-Oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4' -tert-butylphenyl)-4-phenyl-5-(4''-biphenyl)-1,2, 4-Triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4 -ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p -EtTAZ), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: :BCP), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene ( Heteroaromatic compounds such as 2-[3-(dibenzothiophen-4-yl)-2-( ... )phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2 -[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h ]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl (9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated :2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl] Dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzo[f,h]quinoxaline Benzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6m Using quinoxaline or dibenzoquinoxaline derivatives such as DBTPDBq-II It is possible.

[0331] In addition, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexyl fluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF- Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2' -bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) You can also be there.

[0332] <Electron injection layer> The electron injection layer 1115 is a layer containing a substance with high electron injection properties. , lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2 ), lithium oxide (LiO x ) and the like, alkaline metals, alkaline earth metals, or the like These compounds can also be used. In addition, an electride can be used for the electron injection layer 1115. The electride may be, for example, a mixed oxide of calcium and aluminum. The electron transport layer 1114 may be formed of a material containing a high concentration of electrons. It is also possible to use a material that

[0333] The electron injection layer 1115 is made of a composite material obtained by mixing an organic compound and an electron donor (donor). Such composite materials may be formed by electron donors giving electrons to organic compounds. In this case, the organic compound is: It is preferable that the material has excellent transport properties for the generated electrons. Specifically, for example, the above-mentioned The electron transport layer 1114 is made of an electron transport material (metal complex, heteroaromatic compound, etc.). The electron donor can be any substance that exhibits electron donating properties to organic compounds. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferred, and lithium, cerium, Examples include sodium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides and alkaline earth metal oxides are preferred, and lithium oxide, calcium oxide, Examples of the oxides include magnesium oxide, barium oxide, etc. It is also possible to use organic compounds such as tetrathiafulvalene (abbreviation: TTF). It can also be used.

[0334] <Charge generation layer> The charge generation layer 1109 is made of a hole transport material to which an electron acceptor is added. Alternatively, an electron donor may be added to the electron transporting material. In addition, both of these structures may be laminated. By forming the generating layer 1109, the driving voltage increases when an EL layer is laminated. can be suppressed.

[0335] In the charge generating layer 1109, when an electron acceptor is added to a hole transporting material As the hole transporting material, the materials shown in this embodiment mode can be used. The acceptor is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroethane. Examples of suitable cations include benzodimethanone (abbreviation: F4-TCNQ), chloranil, etc. Examples include oxides of metals belonging to groups 4 to 8 in the periodic table. , vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tantalum oxide Examples of suitable oxides include rhenium oxide, manganese oxide, and rhenium oxide.

[0336] In the charge generating layer 1109, when an electron donor is added to an electron transporting material, As the electron transporting material, the materials shown in this embodiment mode can be used. The donor may be an alkali metal, an alkaline earth metal, a rare earth metal, or an elemental Metals belonging to Groups 2 and 13 of the periodic table, as well as their oxides and carbonates, can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium Ca, Yb, In, Lithium oxide, Cesium carbonate It is preferable to use an organic compound such as tetrathianaphthacene. It may also be used as a donor.

[0337] Note that the light-emitting element shown in this embodiment mode can be manufactured by a vacuum process such as evaporation or a spin-coil method. Solution processes such as the ink jet method and the ink jet method can be used. In this case, sputtering, ion plating, ion beam deposition, molecular beam deposition, Physical vapor deposition (PVD) methods such as vacuum deposition and chemical vapor deposition (CVD) methods can be used. In particular, the functional layers (hole injection layer, hole transport layer, light-emitting layer, electron The deposition method (vacuum deposition method, etc.) and coating method (deposition method) are used for the charge generation layer. (dip coating, die coating, bar coating, spin coating, spray coating, etc.) , printing methods (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, Formed by methods such as flexography (relief printing), gravure, and microcontact It is possible.

[0338] Note that each functional layer (hole injection layer, hole transport layer, etc.) constituting the EL layer of the light-emitting element shown in this embodiment The materials for the charge generation layer (electron transport layer, light emitting layer, electron transport layer, electron injection layer) and the charge generation layer are limited to the materials mentioned above. However, other materials can be used in combination as long as they can fulfill the functions of each layer. Examples include polymer compounds (oligomers, dendrimers, polymers, etc.) ), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), Organic compounds (quantum dot materials, etc.) can be used. , colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, Core-type quantum dot materials and the like can be used.

[0339] This embodiment mode can be combined with other embodiment modes as appropriate.

[0340] (Fourth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 17 and 18. do.

[0341] The electronic devices of this embodiment each include a display device according to one embodiment of the present invention in a display portion. Such a display device can be easily enlarged. Furthermore, the display device of one embodiment of the present invention has high reliability. Therefore, the display device of one embodiment of the present invention can be used in various electronic devices. It can be used in the display unit of the device.

[0342] The display unit of the electronic device of this embodiment can display, for example, full high definition, 4K2K, 8K4K, It is possible to display images with a resolution of 16K8K or higher. The display screen size is 20 inches or more diagonally, 30 inches or more diagonally, or 50 inches diagonally. or more, 60 inches or more diagonally, or 70 inches or more diagonally.

[0343] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include audio equipment, sound reproduction devices, etc.

[0344] The electronic device of this embodiment is mounted on the inner or outer wall of a house or building, or the interior of a car. It can be incorporated along the curved surface of the interior or exterior.

[0345] The electronic device of this embodiment may have an antenna. This allows the display of images, information, etc. on the display unit. If a secondary battery is included, the antenna may be used for contactless power transmission.

[0346] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may be possible.

[0347] The electronic device of this embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar - Functions to display date or time, etc., and to run various software (programs) Functions, wireless communication functions, and functions for reading programs or data recorded on recording media etc.

[0348] FIG. 17A shows an example of a television device. The television device 7100 includes a housing 71 The display unit 7000 is built into the housing 71. This shows a configuration that supports 01.

[0349] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0350] The television device 7100 shown in FIG. 17A is operated by an operation switch provided in the housing 7101. This can be done by a separate remote control 7111 or the display unit 700. The display unit 7000 may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the remote control operator 7100. The remote control device 7111 may have a display unit that displays information output from the remote control device 7111. The channel and volume can be controlled using the operation keys or touch panel. , the image displayed on the display unit 7000 can be manipulated.

[0351] The television device 7100 includes a receiver, a modem, and the like. It is possible to receive general television broadcasts through a modem. By connecting the device 7100 to a wired or wireless communication network, one-way ( Information from sender to receiver) or in both directions (between sender and receiver, or between receivers) It is also possible to carry out notification and communication.

[0352] FIG. 17(B) shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and a 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being eaten.

[0353] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0354] 17(C) and 17(D) show examples of digital signage.

[0355] The digital signage 7300 shown in FIG. 17C includes a housing 7301, a display unit 7000, and and a speaker 7303. In addition, LED lamps, operation keys (power switch, It may have a control switch, connection terminals, various sensors, a microphone, etc. do.

[0356] FIG. 17(D) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 is a display unit 7000 provided along the curved surface of a pillar 7401. It has.

[0357] 17C and 17D, the display device of one embodiment of the present invention is used in the display portion 7000. can be applied.

[0358] The larger the display unit 7000, the more information can be displayed at once. The wider the part 7000, the more noticeable it is, and for example, the more effective the advertisement. Cut.

[0359] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows route information but also allows users to operate it intuitively. When used to provide information such as traffic information, intuitive operation is required. Usability can be improved.

[0360] Also, as shown in FIG. 17(C) and FIG. 17(D), a digital signage 7300 or Digital Signage 7400 is an information terminal device 7311 such as a smartphone owned by the user. It is also preferable that the information terminal 7411 can be linked by wireless communication. The advertisement information displayed on the display unit 7000 is transmitted to the information terminal 7311 or the information terminal 7411. It can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the buttons, the display on the display unit 7000 can be switched.

[0361] In addition, the digital signage 7300 or the digital signage 7400 is equipped with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and enjoy it. It is possible.

[0362] The electronic devices shown in FIGS. 18A to 18F include a housing 9000, a display portion 9001, a speaker 9002, and a touch panel 9003. 9003, operation keys 9005 (including the power switch or operation switch), connection terminal Child 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, Light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, (including the ability to measure flow, humidity, gradient, vibration, odor or infrared), It has models such as 9008.

[0363] The electronic devices shown in FIGS. 18A to 18F have various functions. Functions for displaying information (still images, videos, text images, etc.) on the display, touch panel function, Functions that display calendars, dates, or times, etc., and various software (programs) Therefore, the function of controlling the processing, the wireless communication function, the program recorded on the recording medium, or The electronic device can have the function of reading and processing data. The electronic device may have a variety of functions, but is not limited to these. Also, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external or built into the camera), and the function of displaying the captured image on the display unit. It may be possible.

[0364] The electronic devices shown in FIGS. 18A to 18F will be described in detail below.

[0365] 18A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is For example, it can be used as a smartphone. A portable information terminal 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. 9 shows an example in which three icons 9050 are displayed. 51 can also be displayed on another surface of the display unit 9001. An example of the information 9051 is Notifications of incoming emails, SNS messages, phone calls, etc., email and SNS subject lines, sender names , date and time, remaining battery power, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where is displayed.

[0366] 18B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 includes: The display unit 9001 has a function of displaying information on three or more surfaces. 9 shows an example in which information 9053 and information 9054 are displayed on different surfaces. When the mobile information terminal 9102 is stored in the breast pocket of the clothes, The user can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can, for example, receive a call. You can determine whether or not it is possible.

[0367] FIG. 18C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 also has a connection terminal 9006 allows data transmission between other information terminals and charging. Charging may be performed by wireless power supply.

[0368] 18(D), 18(E), and 18(F) show a foldable portable information terminal 9201. 18(D) is a perspective view showing the portable information terminal 9201 in an unfolded state, and FIG. (F) is the folded state, and Figure 18(E) is the state of Figure 18(D) and Figure 18(F) from one side to the other. The portable information terminal 9201 is portable in the folded state. When unfolded, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the portable information terminal 9201 has three hinges 9055. For example, the display unit 9001 has a curvature radius of 0.1 mm or more. It can be bent to less than 150mm.

[0369] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0370] CCMG: color conversion layer, CCMR: color conversion layer, C1: capacitance element, C2: capacitance element, C11: Capacitance element, C12: Capacitance element, DATA: Image data, DATA_W: Data, DATA _W1: Data, DATA_W2: Data, DL: Wiring, DL1: Wiring, DL11: Wiring ,DL12: Wiring, DL13: Wiring, DLW1: Wiring, GL: Wiring, GL1: Wiring, GL 2: Wiring, GL3: Wiring, GL11: Wiring, GL12: Wiring, GL13: Wiring, MEM: Memory circuit, M1: transistor, M2: transistor, M3: transistor, M4: transistor M5: Transistor, M11: Transistor, M12: Transistor, M13 : transistor, ND1: node, ND2: node, ND11: node, ND12: node ND13: node, PIX: pixel, V0: wiring, 10A: display device, 10B: display device 10C: display device; 10D: display device; 11: display unit; 13: gate driver; 14 : source driver, 15: display device, 71: display unit, 74: FPC, 78: drive circuit, 1 00: pixel, 101: pixel, 104: insulating layer, 107: partition wall, 110: light emitting element, 110 B: Light emitting element, 111: pixel electrode, 113: EL layer, 115: common electrode, 117: protective layer 120: Circuit, 121: Space, 141: Insulation layer, 150: Circuit block, 171: Transistor 172: transistor, 173: capacitance element, 175: transistor, 186: Wiring, 187: power line, 189: common wiring, 190: wiring, 191: wiring, 201: conductor layer, 202: insulating layer, 203a: conductive layer, 203b: conductive layer, 204: semiconductor layer, 208 : insulating layer, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214a: channel formation region, 214b: low resistance region, 214c: LDD region, 220: transistor, 230: Transistor, 301: transistor, 303: transistor, 306: connection portion, 307 : wiring, 311: gate insulating layer, 312: insulating layer, 313: insulating layer, 314: insulating layer, 3 15: insulating layer, 317: adhesive layer, 318: adhesive layer, 319: connector, 355: conductive layer, 3 61: substrate, 363: adhesive layer, 365: insulating layer, 367: insulating layer, 371: substrate, 110 0B: pixel, 1100G: pixel, 1100R: pixel, 1100W: pixel, 1101: electrode 1102: electrode, 1103B: EL layer, 1104G: color conversion layer, 1104R: color conversion layer , 1104W: color conversion layer, 1105B: light emitting element, 1106B: light, 1106G: light, 1 106R: light, 1106W: light, 1107: optical adjustment layer, 1109: charge generation layer, 111 1: hole injection layer, 1112: hole transport layer, 1113: light emitting layer, 1114: electron transport layer, 1 115: electron injection layer, 1123B: light-emitting unit, 4000: molecular weight, 7000: display unit , 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote Controller, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300 :Digital signage, 7301:Housing, 7303:Speaker, 7311:Information terminal, 7400: Digital signage, 7401: Pillars, 7411: Information terminals, 9000: Housings 9001: display unit, 9003: speaker, 9005: operation keys, 9006: connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Mobile Information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal

Claims

1. a first pixel and a second pixel; the first pixel has a first light-emitting element, a color conversion layer, and a first memory circuit; the first light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the second pixel has a second light-emitting element and a second memory circuit; the second light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the color conversion layer has a function of converting light emitted by the first light-emitting element into light with a longer wavelength, a first image signal and a first correction signal are supplied to the first pixel; the first memory circuit has a function of holding the first correction signal and a function of adding the first correction signal to the first image signal; the first pixel has a function of displaying an image using the first image signal and the first correction signal; a second image signal and a second correction signal are supplied to the second pixel; the second memory circuit has a function of holding the second correction signal and a function of adding the second correction signal to the second image signal; the second pixel has a function of displaying an image using the second image signal and the second correction signal; the first pixel is a pixel that exhibits a color different from that of the second pixel, The display device, wherein the second pixel is a pixel that emits blue light.

2. a first pixel and a second pixel; the first pixel has a first light-emitting element, a first color conversion layer, and a first memory circuit; the first light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the second pixel has a second light-emitting element, a second color conversion layer, and a second memory circuit; the second light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the first color conversion layer has a function of converting light emitted by the first light-emitting element into light with a longer wavelength, the second color conversion layer has a function of converting light emitted by the second light-emitting element into light with a longer wavelength, a first image signal and a first correction signal are supplied to the first pixel; the first memory circuit has a function of holding the first correction signal and a function of adding the first correction signal to the first image signal; the first pixel has a function of displaying an image using the first image signal and the first correction signal; a second image signal and a second correction signal are supplied to the second pixel; the second memory circuit has a function of holding the second correction signal and a function of adding the second correction signal to the second image signal; the second pixel has a function of displaying an image using the second image signal and the second correction signal; The display device, wherein the first pixel is a pixel that exhibits a different color from the second pixel.

3. a first pixel, a second pixel, and a third pixel; the first pixel has a first light-emitting element, a first color conversion layer, and a first memory circuit; the first light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the second pixel has a second light-emitting element, a second color conversion layer, and a second memory circuit; the second light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the third pixel includes a third light-emitting element and a third memory circuit; the third light-emitting element has at least a light-emitting layer containing a light-emitting substance that emits blue light, the first color conversion layer has a function of converting light emitted by the first light-emitting element into light with a longer wavelength, the second color conversion layer has a function of converting light emitted by the second light-emitting element into light with a longer wavelength, a first image signal and a first correction signal are supplied to the first pixel; the first memory circuit has a function of holding the first correction signal and a function of adding the first correction signal to the first image signal; the first pixel has a function of displaying an image using the first image signal and the first correction signal; a second image signal and a second correction signal are supplied to the second pixel; the second memory circuit has a function of holding the second correction signal and a function of adding the second correction signal to the second image signal; the second pixel has a function of displaying an image using the second image signal and the second correction signal; a third image signal and a third correction signal are supplied to the third pixel; the third memory circuit has a function of holding the third correction signal and a function of adding the third correction signal to the third image signal; the third pixel has a function of displaying an image by using the third image signal and the third correction signal; the first pixel is a pixel that exhibits a color different from that of the second pixel, The display device, wherein the third pixel is a pixel that emits blue light.

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