Substrate treatment apparatus

Abstract

To provide a substrate treatment apparatus which can increase a thickness of a film of a process liquid formed on a substrate.SOLUTION: A first nozzle block 150 has a substrate opposite surface 11a. A slit-like discharge port 15a, which extends in a first direction parallel to a substrate W held by a substrate holding part, is formed on the substrate opposite surface 11a. The first nozzle block 150 is moved relatively to the substrate W by a relative movement part during coating treatment of the substrate W by capillary coating method. The first nozzle block 150 has a back slope 11c which extends diagonally upward from a rear end part of the substrate opposite surface 11a. A substrate treatment apparatus further comprises a pressure control part. The pressure control part adjusts a pressure in a rear space SP, to which the back slope 11c of the first nozzle block 150 is opposed, so as to become lower than a pressure in other space.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus that forms a film of a processing liquid on the upper surface of a substrate. [Background technology]

[0002] Substrate processing apparatuses are used to perform various processes on substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0003] As an example of a substrate processing apparatus, Patent Document 1 describes a rotary substrate processing apparatus that forms a resist film on a substrate. In this substrate processing apparatus, a resist liquid is supplied to the center of a substrate that is held in a horizontal position and rotates. The supplied resist liquid spreads toward the peripheral edge of the substrate, forming a film of the resist liquid over the entire upper surface of the substrate. The substrate with the resist liquid film formed thereon is subjected to a predetermined process such as a drying process. As a result, a resist film is formed on the upper surface of the substrate.

[0004] As described above, the method of forming a film of processing liquid (resist film) on the upper surface of a substrate by supplying the processing liquid (resist liquid) to the upper surface of the substrate is called spin coating. In spin coating, the processing liquid is spread over the entire upper surface of the rotating substrate, so some of the processing liquid supplied to the substrate splashes outward from the substrate. Therefore, spin coating has limitations on the efficiency of processing liquid utilization.

[0005] In addition to the spin coating method described above, there is also a method called capillary coating, which uses a nozzle with a slit-shaped outlet to form a film of the treatment liquid on a substrate. The capillary coating method forms a gap between the nozzle and the substrate, and the treatment liquid fills the gap, causing capillary action to occur, which draws the treatment liquid from the slit-shaped outlet onto the substrate (see, for example, Patent Document 2).

[0006] In the capillary coating method, the processing liquid is drawn onto the substrate from the discharge port under the condition that capillary action occurs, and therefore the capillary coating method has a higher utilization efficiency of the processing liquid than the spin coating method. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2019-046850 [Patent Document 2] Japanese Patent Application Laid-Open No. 2017-148769 Summary of the Invention [Problem to be solved by the invention]

[0008] However, in the capillary coating method, the amount of processing liquid that can be drawn onto the substrate from the discharge port is limited to a range that can utilize capillary action.

[0009] An object of the present invention is to provide a substrate processing apparatus that can increase the thickness of a film of a processing liquid formed on a substrate. [Means for solving the problem]

[0010] A substrate processing apparatus according to one aspect of the present invention includes a substrate holding unit that holds a substrate, a first nozzle that has a first substrate-facing surface formed with a slit-shaped first outlet that extends in a first direction parallel to the substrate held by the substrate holding unit and that discharges a processing liquid from the first outlet, a relative movement unit that supports the substrate holding unit and the first nozzle and is configured to be able to move at least one of the substrate holding unit and the first nozzle, and a first gap that is formed between an upper surface of the substrate and the first substrate-facing surface of the first nozzle and that generates a processing liquid in the first gap. a control unit that performs first relative movement control to control the relative movement unit so that the first nozzle moves through a space above the substrate in a second direction that is parallel to the substrate and intersects with the first direction while the processing liquid is drawn out from the first discharge port onto the substrate by capillary action caused by the capillary action; and a pressure adjustment unit, wherein the first nozzle has a first rear end surface that extends upward or obliquely upward from a rear end of the first substrate-facing surface in the second direction, and the pressure adjustment unit adjusts the pressure in a first rear space that the first rear end surface of the first nozzle faces to be lower than the pressure in other spaces. [Effects of the Invention]

[0011] According to the present invention, it is possible to increase the thickness of the film of the processing liquid formed on the substrate. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a schematic perspective view of an external appearance of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is an external perspective view of a first nozzle block and an intake guide block shown in FIG. 1. [Figure 3] 3 is a bottom view of the first nozzle block and the intake guide block of FIG. 2, seen from a position below them. FIG. [Figure 4] 3 is a vertical cross-sectional view of the first nozzle block and the intake guide block of FIG. 2 cut along a virtual plane in FIG. 2. [Figure 5]FIG. 4 is a vertical cross-sectional view illustrating the dimensions of the lower end portions of the first nozzle block and the intake guide block and their neighboring portions. [Figure 6] 2A to 2C are diagrams for explaining the state of a processing liquid during a coating process on a substrate by the coating apparatus of FIG. [Figure 7] 2 is a block diagram showing the configuration of a control system of the substrate processing apparatus of FIG. 1. FIG. [Figure 8] FIG. 10 is a schematic perspective view of an external appearance of a substrate processing apparatus according to a second embodiment. [Figure 9] FIG. 9 is a perspective view showing the appearance of the first nozzle block, the intake guide block, and the second nozzle block shown in FIG. 8. [Figure 10] 10 is a longitudinal cross-sectional view of the first nozzle block, the intake guide block, and the second nozzle block of FIG. 9 cut along a virtual plane of FIG. 9. FIG. [Figure 11] 9 is a diagram for explaining the state of a processing liquid during a coating process on a substrate by the coating apparatus of FIG. 8. FIG. [Figure 12] FIG. 4 is a diagram showing the results of a simulation of a coating process on a substrate using the coating apparatuses of the first and second embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0013] A substrate processing apparatus according to one embodiment of the present invention will be described below with reference to the drawings. In the following description, the term "substrate" refers to a substrate for a flat panel display (FPD) used in a liquid crystal display device or an organic electroluminescence (EL) display device, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate. The substrate described below has a circular shape in plan view, excluding the portion where a notch is formed.

[0014] 1. First embodiment <1> Schematic configuration of substrate processing apparatus Fig. 1 is a schematic perspective view of the exterior of a substrate processing apparatus according to a first embodiment. As shown in Fig. 1, the substrate processing apparatus 1 according to this embodiment includes a coating apparatus 100, a control unit 110, a processing liquid supply system 170, and a liquid adjustment intake system 180, and is housed in a housing (not shown). In Fig. 1 and certain subsequent figures, arrows indicating mutually orthogonal X, Y, and Z directions are used to clarify the positional relationships. The X and Y directions are orthogonal to each other in a horizontal plane, and the Z direction corresponds to the up-down direction (vertical direction).

[0015] The coating apparatus 100 is configured to enable a coating process for forming a film of a processing liquid on a substrate W, and includes two stage supports 120, a stage device 130, two nozzle supports 140, a first nozzle block 150, and an intake guide block 160. In this embodiment, the processing liquid used in the coating apparatus 100 is a coating liquid for a resist film (resist liquid) or a coating liquid for an anti-reflection film (anti-reflection liquid). The substrate W to be coated in the coating apparatus 100 of this example has a diameter of approximately 300 mm.

[0016] Each of the two stage supports 120 of the coating apparatus 100 has a generally rectangular parallelepiped shape extending in one direction and is provided on the bottom surface of a housing (not shown) so as to extend along the X direction. The two stage supports 120 are arranged side by side in the Y direction. A guide rail 121 extending along the longitudinal direction of the stage support 120 is provided on the upper surface of each stage support 120. In the following description, the direction from one end ta of the stage support 120 to the other end tb thereof will be referred to as the front of the coating apparatus 100, and the direction from the other end tb of the stage support 120 to the one end ta thereof will be referred to as the rear of the coating apparatus 100.

[0017] The stage device 130 is located between the two stage supports 120 in the Y direction and is supported by the two stage supports 120. The stage device 130 includes a plate member 131, an absorption chuck 132, a plurality of (three in this example) support pins 133, a pin lifting / lowering drive unit 134, and a suction drive unit 135.

[0018] The plate member 131 is formed of, for example, a rectangular flat plate-like member, and constitutes the upper surface portion of the stage device 130. A disk-shaped suction chuck 132 is provided in the center of the plate member 131 so as to protrude a predetermined distance (height) upward from the plate member 131. The suction chuck 132 has an upper surface formed so that the substrate W can be placed thereon.

[0019] A plurality of pin insertion holes (not shown) are formed in a plurality of portions of the plate member 131 that are near the suction chuck 132 and surround the suction chuck 132 in a plan view, so as to penetrate the plate member 131 in the Z direction.

[0020] The pin lifting / lowering drive unit 134 and the suction drive unit 135 are provided below the plate member 131. The multiple support pins 133 are supported by the pin lifting / lowering drive unit 134 so as to extend in the Z direction and overlap with the multiple pin insertion holes in a plan view. The pin lifting / lowering drive unit 134 moves the multiple support pins 133 in the Z direction under the control of the control unit 110. As a result, the upper ends of the multiple support pins 133 move through the multiple pin insertion holes between a pin-up position above the suction chuck 132 and a pin-down position below the plate member 131.

[0021] When the substrate W is carried into the substrate processing apparatus 1, the upper ends of the plurality of support pins 133 are held in the pin up position. In this state, an unprocessed substrate W is placed on the plurality of support pins 133. On the other hand, when the substrate W is carried out of the substrate processing apparatus 1, the upper ends of the plurality of support pins 133 are in the pin up position, and the processed substrate W supported on the plurality of support pins 133 is received by a transport device (not shown). Furthermore, when the substrate W is subjected to a coating process in the substrate processing apparatus 1, the upper ends of the plurality of support pins 133 are held in the pin down position.

[0022] A plurality of air intake holes (not shown) are formed on the upper surface of the suction chuck 132. The plurality of air intake holes are connected to exhaust equipment in the factory through a suction drive unit 135 and an air intake system (not shown). The suction drive unit 135 switches the air intake path formed between the plurality of air intake holes and the air intake system between an open state and a closed state under the control of the control unit 110. With this configuration, the suction drive unit 135 opens the air intake path when the substrate W is placed on the suction chuck 132. This allows the substrate W to be sucked and held on the suction chuck 132. Furthermore, the suction drive unit 135 closes the air intake path when the substrate W is sucked and held on the suction chuck 132. This allows the substrate W to be released from the suction chuck 132.

[0023] Two nozzle supports 140 are provided on the upper surfaces of the two stage supports 120, respectively. The two nozzle supports 140 are arranged side by side in the Y direction. Each of the two nozzle supports 140 is movable in the X direction (the front-to-rear direction of the coating apparatus 100) along a guide rail 121 of the stage support 120 on which the nozzle support 140 is provided.

[0024] The first nozzle block 150 and the intake guide block 160 are located between the two nozzle supports 140 in the Y direction and are supported by the two nozzle supports 140. At least one of the two nozzle supports 140 has an X-direction drive unit 141 and a Z-direction drive unit 142 built in.

[0025] The first nozzle block 150 is made of metal or resin and has a generally rectangular parallelepiped shape that extends in one direction. The intake guide block 160 is also made of metal or resin and has a generally rectangular parallelepiped shape that extends in one direction. The first nozzle block 150 and the intake guide block 160 are connected in this order so as to be aligned from the front to the rear of the coating device 100.

[0026] A pipe 171 constituting a part of the processing liquid supply system 170 is connected to the first nozzle block 150. A pipe 181 constituting a part of the liquid adjustment intake system 180 is connected to the intake guide block 160. A discharge port 15a (FIG. 3) for discharging the processing liquid onto the substrate W is formed at the lower end of the first nozzle block 150. A intake port 25a (FIG. 3) for sucking the atmosphere in a space located behind the lower end of the first nozzle block 150 (a rear space SP (FIG. 5) described later) is formed near the lower end of the intake guide block 160. The first nozzle block 150 and the intake guide block 160 will be described in detail later.

[0027] The X-direction driving unit 141 includes an actuator such as a motor, and moves the nozzle support 140 in the X direction on the guide rails 121 of the stage support 120. The Z-direction driving unit 142 includes an actuator such as a motor, and moves the first nozzle block 150 and the intake guide block 160, which are supported by the nozzle support 140, in the Z direction.

[0028] The processing liquid supply system 170 includes a liquid supply device 172 in addition to the above-described piping 171. The processing liquid supply system 170 further includes fluid-related devices (not shown) including a processing liquid supply source, one or more pipes, joints, valves, etc. The liquid supply device 172 is, for example, a pump, and supplies processing liquid from a processing liquid supply source (not shown) to the first nozzle block 150 through the piping 171.

[0029] The liquid adjustment intake system 180 includes an intake device 182 in addition to the above-mentioned piping 181. Furthermore, the liquid adjustment intake system 180 includes fluid-related equipment (not shown) including an exhaust facility, one or more pipes, joints, valves, etc. The intake device 182 is composed of an aspirator, an ejector, etc., and sucks the atmosphere in a rear space SP (FIG. 5) described later through an intake guide block 160. The control unit 110 controls the operation of each unit of the substrate processing apparatus 1. The control unit 110 will be described in detail later.

[0030] In the substrate processing apparatus 1 having the above configuration, during coating processing of the substrate W, the first nozzle block 150 is brought close to the upper surface of the substrate W while the substrate W is held by suction on the suction chuck 132. In this state, the first nozzle block 150 moves in the X direction from rear to front in the space above the substrate W. At this time, the position in the Z direction (height position) of the first nozzle block 150 is adjusted so that the processing liquid in the first nozzle block 150 is drawn (discharged) from the discharge port 15a (FIG. 3) into the gap between the first nozzle block 150 and the substrate W by capillary action. This method of supplying the coating liquid from the discharge port of the nozzle onto the substrate W by utilizing capillary action is called a capillary coating method.

[0031] <2> Details of the first nozzle block 150 and the intake guide block 160 Figure 2 is an external perspective view of the first nozzle block 150 and intake guide block 160 of Figure 1. Figure 3 is a bottom view of the first nozzle block 150 and intake guide block 160 of Figure 2 as seen from a position below them. Also, Figure 4 is a vertical cross-sectional view of the first nozzle block 150 and intake guide block 160 of Figure 2 taken along imaginary plane VS1 of Figure 2.

[0032] 2, the first nozzle block 150 has a front surface 13 and a rear surface 14 extending in the Y direction. The front surface 13 is a rectangular flat surface facing the front of the coating apparatus 100, and the rear surface 14 is a rectangular flat surface facing the rear of the coating apparatus 100. The first nozzle block 150 also has an upper end surface 12 connecting the upper ends of the front surface 13 and the rear surface 14. The first nozzle block 150 also has a substrate-facing surface 11a, a front inclined surface 11b, and a rear inclined surface 11c.

[0033] As shown in Fig. 4, the front inclined surface 11b extends rearward and diagonally downward from the lower end of the front surface 13 when viewing the first nozzle block 150 in the Y direction. On the other hand, the rear inclined surface 11c extends forward and diagonally downward from the lower end of the rear surface 14 when viewing the first nozzle block 150 in the Y direction. The substrate-facing surface 11a is the lower end surface of the first nozzle block 150, and connects the lower end of the front inclined surface 11b and the lower end of the rear inclined surface 11c so as to be parallel to the horizontal plane. A slit-shaped discharge port 15a is formed in the substrate-facing surface 11a.

[0034] As shown in FIG. 2, the intake guide block 160 has a front surface 23 and a rear surface 24 extending in the Y direction. The intake guide block 160 is connected to the rear portion of the first nozzle block 150. The front surface 23 of the intake guide block 160 is a rectangular, curved surface that faces the front of the coating device 100 and is partially curved when the intake guide block 160 is viewed in the Y direction. The front surface 23 is formed so as to contact the front surface 23 of the first nozzle block 150 and the upper half of the rear inclined surface 11c when the first nozzle block 150 and the intake guide block 160 are connected. The rear surface 24 of the intake guide block 160 is a rectangular, flat surface that faces the rear of the coating device 100.

[0035] The intake guide block 160 also has an upper end surface 22 that connects the upper ends of the front surface 23 and the rear surface 24. The intake guide block 160 also has a substrate-facing surface 21a, a front inclined surface 21b, and a rear inclined surface 21c.

[0036] As shown in Figure 4, when viewing the intake guide block 160 in the Y direction, the front inclined surface 21b extends rearward and diagonally downward from the lower end of the front surface 23. On the other hand, when viewing the intake guide block 160 in the Y direction, the rear inclined surface 21c extends forward and diagonally downward from the lower end of the rear surface 24. The board-facing surface 21a is the lower end surface of the intake guide block 160 and connects the lower end of the front inclined surface 21b and the lower end of the rear inclined surface 21c so as to be parallel to the horizontal plane. A slit-shaped intake port 25a is formed in the front inclined surface 21b.

[0037] As shown in Figure 3, the first nozzle block 150 and the intake guide block 160 have the same or approximately the same length in the Y direction. Furthermore, the outlet 15a of the first nozzle block 150 and the intake 25a of the intake guide block 160 also have the same or approximately the same length in the Y direction. The outlet 15a extends parallel to the Y direction from near one end of the first nozzle block 150 to near the other end. The intake 25a extends parallel to the Y direction from near one end of the intake guide block 160 to near the other end. Furthermore, each of the outlet 15a and the intake 25a has a constant width in the X direction.

[0038] As shown in Fig. 4, a liquid discharge flow path 15b and a storage section 15c are formed inside the first nozzle block 150. The storage section 15c is formed so as to be able to store a certain amount of the processing liquid supplied through the piping 171 of Fig. 1. A liquid discharge flow path 15b is formed from the storage section 15c to the discharge port 15a. As a result, the internal space of the storage section 15c communicates with the space below the first nozzle block 150 (the external space of the first nozzle block 150) through the liquid discharge flow path 15b and the discharge port 15a.

[0039] An intake path 25b is formed inside the intake guide block 160. When the intake guide block 160 is viewed in the Y direction, the intake path 25b is formed so as to bend from the intake port 25a and extend to the vicinity of the upper end of the intake guide block 160. As shown in Figures 2 and 4, a through-hole 29 is formed in the approximate center of the upper end surface 22, which connects the space inside the intake path 25b with the space above the intake guide block 160.

[0040] 1 is connected to a portion of the upper end surface 22 of the intake guide block 160 where the through-hole 29 is formed. As a result, when the intake device 182 of FIG. 1 is operating, the atmosphere in a rear space SP (FIG. 5), which will be described later, is sucked into the intake device 182 through the intake port 25a, the intake path 25b, and the through-hole 29.

[0041] 2 and 3, a pressure sensor 159 is provided at the center in the Y direction of the rear inclined surface 11c of the first nozzle block 150. The pressure sensor 159 detects and outputs the pressure in a rear space SP (FIG. 5), which will be described later, during coating processing of the substrate W. Note that the pressure sensor 159 is not shown in FIG.

[0042] <3> Dimensions of each part of the first nozzle block 150 and the intake guide block 160 Figure 5 is a vertical cross-sectional view for explaining the dimensions of the lower ends and the vicinity thereof of the first nozzle block 150 and the intake guide block 160. Like the vertical cross-sectional view of Figure 4, the vertical cross-sectional view of Figure 5 is a cross-sectional view of the first nozzle block 150 and the intake guide block 160 of Figure 2 taken along the imaginary plane VS1 of Figure 2. As with the example of Figure 4, the pressure sensor 159 is not shown in Figure 5 either.

[0043] Here, the width of the discharge port 15a in the X direction is referred to as the discharge width G11, and the width of the intake port 25a in a direction parallel to the front inclined surface 21b of the intake guide block 160 and perpendicular to the Y direction is referred to as the intake width G21. Furthermore, the size of the gap formed between the substrate W and the substrate facing surface 11a of the first nozzle block 150 during the coating process of the substrate W is referred to as the gap G01. In Figure 5, part of the outline of the substrate W during the coating process is indicated by a dashed line.

[0044] As described above, in the substrate processing apparatus 1 according to this embodiment, the coating process of the substrate W is performed by the capillary coating method. Therefore, the discharge width G11 is determined so that the processing liquid stored in the storage portion 15c does not leak out of the discharge port 15a when the storage portion 15c is not pressurized (for example, when the storage portion 15c is maintained at atmospheric pressure). The discharge width G11 is, for example, 40 μm or more and 100 μm or less.

[0045] During the coating process on the substrate W, the gap G01 is adjusted so that a capillary force is generated that draws the treatment liquid in the reservoir 15c into the gap between the substrate facing surface 11a and the substrate W. The gap G01 for generating the capillary force can be calculated in advance depending on the type, density, viscosity, and temperature of the treatment liquid.

[0046] In this embodiment, the rear inclined surface 11c of the first nozzle block 150 is formed so as to be inclined, for example, within a range of 30° to 60° with respect to the horizontal plane. Furthermore, the length of the rear inclined surface 11c in the inclined direction when viewed in the Y direction is, for example, 3 mm to 9 mm.

[0047] On the other hand, the front inclined surface 21b of the intake guide block 160 is formed to be inclined, for example, within a range of 30° to 45° with respect to the horizontal plane. Furthermore, the length of the inclined direction of the front inclined surface 21b when viewed in the Y direction is, for example, 3 mm to 9 mm.

[0048] The substrate-facing surface 11a of the first nozzle block 150 and the substrate-facing surface 21a of the intake guide block 160 are formed to be at the same height position when supported by the two nozzle supports 140 of FIG.

[0049] During coating processing of the substrate W, a space separated from other spaces is formed, as viewed in the Y direction, between the rear inclined surface 11c of the first nozzle block 150, the front inclined surface 21b of the intake guide block 160, and the upper surface of the substrate W. In other words, during coating processing of the substrate W, the space facing the rear inclined surface 11c of the first nozzle block 150 is separated from the space in front of the first nozzle block 150 by the lower end of the first nozzle block 150 and its vicinity. Furthermore, as viewed in the Y direction, the space facing the rear inclined surface 11c of the first nozzle block 150 is separated from the space behind the intake guide block 160 by the lower end of the intake guide block 160 and its vicinity.

[0050] In the following description, the space separated from the space in front of the first nozzle block 150 and the space behind the intake guide block 160 will be referred to as the rear space SP. The rear space SP can be said to be the space above the substrate W, facing the rear inclined surface 11c of the first nozzle block 150, and facing the rear inclined surface 21c of the intake guide block 160.

[0051] The intake port 25a of the intake guide block 160 opens toward the rear space SP, and its intake width G21 is, for example, not less than 40 μm and not more than 100 μm.

[0052] <4> State of processing liquid during coating processing of substrate W 6 is a diagram for explaining the state of the processing liquid during coating processing of the substrate W by the coating apparatus 100 of FIG. 1. During coating processing of the substrate W in the coating apparatus 100, the substrate W is sucked and held on the suction chuck 132. Furthermore, the positions of the first nozzle block 150 and the intake guide block 160 in the Z direction are adjusted at positions behind and near the substrate W. Specifically, the gap G01 in FIG. 5 is adjusted to a size corresponding to the coating processing of the substrate W.

[0053] 6, the first nozzle block 150 and the intake guide block 160 move in the X direction from rear to front in the space above the substrate W. At this time, the processing liquid in the first nozzle block 150 comes into contact with the substrate W, and capillary action occurs in the gap between the first nozzle block 150 and the substrate W. As a result, the processing liquid is drawn out onto the substrate W from the discharge ports 15a of the first nozzle block 150, and the processing liquid is spread over the upper surface of the substrate W.

[0054] During coating processing of the substrate W, the atmosphere in the rear space SP is sucked through the intake port 25a of the intake guide block 160 so that the rear space SP is maintained at a predetermined pressure (hereinafter referred to as the target pressure). The target pressure is a pressure lower than the pressure in spaces other than the rear space SP, and in this embodiment, is a pressure lower than atmospheric pressure, for example.

[0055] The middle part of Fig. 6 shows an enlarged vertical cross-sectional view of the state of the processing liquid during a coating process using the first nozzle block 150 and the intake guide block 160 as an example of a coating process according to the first embodiment. The lower part of Fig. 6 shows an enlarged vertical cross-sectional view of the state of the processing liquid during a coating process using only the first nozzle block 150 as an example of a coating process according to a reference embodiment. The vertical cross-sectional views in the middle and lower parts of Fig. 6 correspond to, for example, a portion of a vertical cross-sectional view of the coating apparatus 100 in Fig. 1 cut along a vertical plane passing through the center of the substrate W and extending in the X direction.

[0056] 6, in order to make it easier to understand the state of the processing liquid, the hatching indicating the cross sections of the two blocks (150, 160) and the substrate W is omitted, and a dot pattern is applied only to the processing liquid. Also, the dimensions of the gaps between each block (150, 160) and the substrate W are exaggerated.

[0057] 6, during the coating process on the substrate W using the first nozzle block 150 and the intake guide block 160, the atmosphere in the rear space SP is sucked in through the intake port 25a and the intake path 25b, thereby adjusting the pressure in the rear space SP to the target pressure.

[0058] In this case, in the X direction, the rear space SP and the space in front of the first nozzle block 150 are blocked by the processing liquid discharged from the first nozzle block 150. In addition, in the X direction, the rear space SP and the space behind the intake guide block 160 are in communication with each other through the gap between the intake guide block 160 and the substrate W, but this gap is so small that capillary action can occur.

[0059] As a result, when the atmosphere in the rear space SP is sucked as described above, the surface of the processing liquid exposed in the rear space SP is sucked closer to the intake port 25a, which results in a larger amount of processing liquid being drawn onto the substrate W from the discharge port 15a of the first nozzle block 150 than when the intake guide block 160 is not used, as shown in the lower part of Figure 6.

[0060] As a result, when coating a substrate W using the first nozzle block 150 and the intake guide block 160, the thickness of the film of processing liquid formed on the substrate W is greater than when coating a substrate W using only the first nozzle block 150.

[0061] <5> Control system of substrate processing apparatus 1 7 is a block diagram showing the configuration of a control system of the substrate processing apparatus 1 of FIG. 1. As described above, the substrate processing apparatus 1 includes a control unit 110. The control unit 110 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and a storage device. The RAM is used as a working area for the CPU. The ROM stores a system program. The storage device stores a coating processing program for performing a coating process on a substrate W.

[0062] 7, the control unit 110 includes, as functional units for controlling the operation of each unit of the substrate processing apparatus 1, a nozzle movement control unit 111, a discharge control unit 112, a stage control unit 113, a suction control unit 114, and a condition setting unit 115. The functional units of the control unit 110 are realized by a CPU executing a coating processing program stored in a storage device on a RAM. Some or all of the functional units of the control unit 110 may be realized by hardware such as an electronic circuit.

[0063] One or more predetermined processing conditions are stored in the condition setting unit 115. In this embodiment, the one or more processing conditions include a "movement speed of the nozzle block," a "movement direction of the nozzle block," a "gap distance between the nozzle block and the substrate," and a "target pressure."

[0064] The "movement speed of the nozzle block" is the movement speed at which the first nozzle block 150 moves in the front-to-rear direction of the coating apparatus 100 relative to the substrate W during the coating process. This movement speed is set to, for example, 0.02 m / sec. The "movement direction of the nozzle block" is the direction in which the first nozzle block 150 moves relative to the substrate processing apparatus 1 during the coating process, and in this embodiment, is the direction from the rear of the coating apparatus 100 to the front of the coating apparatus 100.

[0065] The "gap distance between the nozzle block and the substrate" is the distance G01 in FIG. 5 that should be adjusted during the coating process. This distance G01 is set to, for example, 70 μm. The "target pressure" is the pressure in the rear space SP in FIG. 5 that should be adjusted during the coating process of the substrate W, as described above, and is set to, for example, a pressure that is lower than -400 Pa and not lower than 0 Pa.

[0066] The substrate processing apparatus 1 further includes an operation unit 190. The operation unit 190 includes, for example, a keyboard and a pointing device, and is configured to be operable by a user. The user can input one or more processing conditions for the coating processing of the substrate W by operating the operation unit 190. When the processing conditions are input, the condition setting unit 115 updates the processing conditions previously stored with the input processing conditions.

[0067] The nozzle movement control unit 111 controls the X-direction driving unit 141 and the Z-direction driving unit 142 based on various processing conditions set by the condition setting unit 115 during coating processing of the substrate W. For example, the nozzle movement control unit 111 controls the Z-direction driving unit 142 so that a gap of a set distance G01 is formed between the first nozzle block 150 and the substrate W during coating processing of the substrate W. Furthermore, the nozzle movement control unit 111 controls the X-direction driving unit 141 so that the first nozzle block 150 moves in a set movement direction at a set movement speed during coating processing of the substrate W.

[0068] The discharge control unit 112 controls the processing liquid supply system 170 so that the processing liquid is supplied to the first nozzle block 150 during coating processing of the substrate W. The stage control unit 113 controls the pin lifting / lowering drive unit 134 and the suction drive unit 135. As a result, the pin lifting / lowering drive unit 134 moves the multiple support pins 133 up and down, for example, when the substrate W is carried in and out of the coating apparatus 100. The suction drive unit 135 suction-holds the substrate W on the suction chuck 132. In addition, the suction drive unit 135 releases the substrate W suction-held on the suction chuck 132.

[0069] The suction control unit 114 controls the liquid adjustment suction system 180. More specifically, during the coating process on the substrate W, the suction control unit 114 controls the suction device 182 (FIG. 1) based on the detection result of the pressure output from the pressure sensor 159 so that the pressure in the rear space SP becomes the target pressure.

[0070] <6> effect (a) In the substrate processing apparatus 1, during coating processing of the substrate W, the processing liquid is efficiently supplied from the first nozzle block 150 to the upper surface of the substrate W by the capillary coating method. Therefore, compared to the spin coating method, wasteful consumption of the processing liquid is suppressed.

[0071] During coating processing of the substrate W, the liquid adjustment intake system 180 sucks in the atmosphere in the rear space SP through the intake guide block 160, and the pressure in the rear space SP is adjusted to a target pressure. The target pressure is lower than the pressure in spaces other than the rear space SP. As a result, the processing liquid drawn into the gap between the first nozzle block 150 and the substrate W is drawn into the rear space SP. Therefore, compared to the case where the processing liquid is supplied to the top surface of the substrate W only by capillary force generated in the gap between the first nozzle block 150 and the substrate W (the example in the lower part of Figure 6), the amount of processing liquid drawn onto the substrate W from the first nozzle block 150 increases.

[0072] As a result, the thickness of the film of the processing liquid formed on the substrate W can be increased.

[0073] (b) As described above, the pressure in the rear space SP is adjusted based on the detection result of the pressure sensor 159. This prevents the pressure in the rear space SP from fluctuating significantly during coating processing of the substrate W. As a result, the thickness of the film of the processing liquid formed on the substrate W is prevented from being disturbed.

[0074] (c) The intake guide block 160 is connected to the rear of the first nozzle block 150. In this state, the rear space SP is separated from the space behind the intake guide block 160 by the lower end of the intake guide block 160 and its vicinity, as viewed in the Y direction, except for a small gap. This allows the atmosphere in the rear space SP to be efficiently sucked in by the liquid adjustment intake system 180. Furthermore, the pressure in the rear space SP can be easily adjusted.

[0075] (d) The intake port 25a of the intake guide block 160 is formed to extend in the Y direction parallel to the discharge port 15a of the first nozzle block 150. Furthermore, the intake path 25b of the intake guide block 160 is formed to extend upward from the intake port 25a inside the intake guide block 160. This makes it possible to suck in the atmosphere of the rear space SP uniformly in the Y direction when sucking in the atmosphere of the rear space SP. Therefore, large variations in pressure in multiple parts of the rear space SP are suppressed.

[0076] 2. Second embodiment The substrate processing apparatus 1 according to the second embodiment will be described with respect to differences from the substrate processing apparatus 1 according to the first embodiment. Fig. 8 is a schematic perspective view of the exterior of the substrate processing apparatus 1 according to the second embodiment. As shown in Fig. 8, in the substrate processing apparatus 1 according to the present embodiment, the coating apparatus 100 includes a second nozzle block 250 in addition to the components of the coating apparatus 100 of Fig. 1 according to the first embodiment.

[0077] The second nozzle block 250 basically has the same configuration as the first nozzle block 150. Similarly to the first nozzle block 150 and the intake guide block 160, the second nozzle block 250 is located between the two nozzle supports 140 in the Y direction and is supported by the two nozzle supports 140. Furthermore, the second nozzle block 250 is located forward of the first nozzle block 150 in the front-rear direction of the coating apparatus 100. Similar to the first nozzle block 150, a pipe 171 is connected to the second nozzle block 250. As a result, in this embodiment, a common processing liquid is supplied from the processing liquid supply system 170 to the first nozzle block 150 and the second nozzle block 250.

[0078] Figure 9 is an external perspective view of the first nozzle block 150, the intake guide block 160, and the second nozzle block 250 of Figure 8. Figure 10 is a vertical cross-sectional view of the first nozzle block 150, the intake guide block 160, and the second nozzle block 250 of Figure 9 taken along imaginary plane VS2 of Figure 9.

[0079] 9, like the first nozzle block 150, the second nozzle block 250 has a front surface 33 and a rear surface 34 that extend in the Y direction. The second nozzle block 250 also has an upper end surface 32 that connects the upper ends of the front surface 33 and the rear surface 34. The second nozzle block 250 also has a substrate-facing surface 31a, a front inclined surface 31b, and a rear inclined surface 31c.

[0080] As shown in FIG. 10, the front inclined surface 31b extends rearward and diagonally downward from the lower end of the front surface 33 when viewing the second nozzle block 250 in the Y direction. Meanwhile, the rear inclined surface 31c extends forward and diagonally downward from the lower end of the rear surface 34 when viewing the second nozzle block 250 in the Y direction. The substrate-facing surface 31a is the lower end surface of the second nozzle block 250 and connects the lower end of the front inclined surface 31b with the lower end of the rear inclined surface 31c so as to be parallel to the horizontal plane. A slit-shaped discharge port 35a is formed in the substrate-facing surface 31a. Although not shown, the discharge port 35a is formed in the substrate-facing surface 31a so as to extend in the Y direction, similar to the intake port 25a in FIG. 3. A discharge liquid flow path 35b and a reservoir 35c are formed inside the second nozzle block 250.

[0081] In this embodiment, the second nozzle block 250 is supported by the nozzle support 140 at a position spaced a predetermined distance forward from the first nozzle block 150. In this state, the substrate-facing surface 31a of the second nozzle block 250 is parallel to and at the same height as the substrate-facing surface 11a of the first nozzle block 150. As a result, during the coating process on the substrate W, a gap of the same size as the gap between the first nozzle block 150 and the substrate W is formed between the second nozzle block 250 and the substrate W.

[0082] 11 is a diagram for explaining the state of the processing liquid during coating processing of the substrate W by the coating apparatus 100 of FIG. 8. As in the example of the first embodiment, during coating processing of the substrate W in the coating apparatus 100, the substrate W is sucked and held on the suction chuck 132. Furthermore, at positions behind and near the substrate W, adjustment of the positions in the Z direction of the first nozzle block 150, the intake guide block 160, and the second nozzle block 250 is performed. Specifically, the gap G01 in FIG. 5 is adjusted to a size corresponding to the coating processing of the substrate W.

[0083] 11, the first nozzle block 150, the intake guide block 160, and the second nozzle block 250 move in the X direction from rear to front in the space above the substrate W. As a result, a film of the processing liquid is formed on the entire upper surface of the substrate W.

[0084] 11 shows an enlarged vertical cross-sectional view of the state of the processing liquid on the substrate W during coating processing using the first nozzle block 150, the intake guide block 160, and the second nozzle block 250. The vertical cross-sectional view in the balloon in Fig. 11 corresponds to, for example, a part of a vertical cross-sectional view of the coating apparatus 100 in Fig. 8 taken along a vertical plane that passes through the center of the substrate W and extends in the X direction.

[0085] 11, in order to make it easier to understand the state of the processing liquid, the hatching indicating the cross sections of the three blocks (150, 160, 250) and the substrate W is omitted, and a dot pattern is applied only to the processing liquid. Also, the dimensions of the gaps between each block (150, 160, 250) and the substrate W are exaggerated.

[0086] 11, during coating processing of the substrate W, the processing liquid in the second nozzle block 250 first comes into contact with the substrate W, and capillary action occurs in the gap between the second nozzle block 250 and the substrate W. As a result, the processing liquid is drawn onto the substrate W from the outlet 35a of the second nozzle block 250, and the processing liquid is spread over the upper surface of the substrate W.

[0087] Furthermore, at a position behind the second nozzle block 250, the processing liquid in the first nozzle block 150 comes into contact with the processing liquid on the substrate W, and capillary action occurs in the gap between the first nozzle block 150 and the substrate W. As a result, the processing liquid is drawn onto the substrate W from the discharge ports 15a of the first nozzle block 150, and additional processing liquid is supplied so as to be layered on the film of processing liquid formed on the substrate W.

[0088] As described above, in the coating process of the substrate W according to this embodiment, the first nozzle block 150 supplies additional processing liquid onto the film of processing liquid formed on the substrate W by the second nozzle block 250. In other words, the two nozzle blocks (150, 250) use capillary action to form two layers of processing liquid on the substrate W. This makes it possible to increase the thickness of the film of processing liquid formed on the substrate W.

[0089] Also in this embodiment, during the coating process on the substrate W, the atmosphere in the rear space SP of the first nozzle block 150 is sucked through the intake port 25a and the intake path 25b, as indicated by the thick dotted arrow in the blowout in Fig. 11. That is, the pressure in the rear space SP is adjusted to the target pressure. As a result, the amount of processing liquid drawn onto the substrate W from the first nozzle block 150 is increased compared to when the intake guide block 160 is not provided. That is, it is possible to form a thicker film of processing liquid on the substrate W compared to when the intake guide block 160 is not provided.

[0090] 8, the first nozzle block 150, the intake guide block 160, and the second nozzle block 250 are integrally supported by two nozzle supports 140. In this embodiment, the distance between the first nozzle block 150 and the second nozzle block 250 in the X direction is set to be relatively small (for example, about 10 mm). In this case, the time required to apply the treatment liquid using the two nozzle blocks (150, 250) is reduced.

[0091] 8, the second nozzle block 250, which is located at the front of the two nozzle blocks (150, 250), does not have an intake guide block 160 attached. Therefore, the atmosphere is not suctioned from the space between the first nozzle block 150 and the second nozzle block 250 in the X direction. In this case, the pressure in the space around the second nozzle block 250 is less affected by the pressure adjustment in the rear space SP of the first nozzle block 150. This prevents the processing liquid ejected onto the substrate W from the first nozzle block 150 and the second nozzle block 250 from being disturbed by changes in pressure in the space ahead of the first nozzle block 150. As a result, large variations in the thickness of the processing liquid film formed on the substrate W by the coating process are suppressed.

[0092] 3. Simulation of coating process on substrate W It is preferable that the thickness of the film of processing liquid formed on the substrate W by the coating process of the substrate W is adjustable. As described above, in the coating apparatus 100 of FIGS. 1 and 8, the pressure in the rear space SP is adjusted to a target pressure. This increases the amount of processing liquid drawn from the first nozzle block 150. In consideration of this, it is considered that the amount of processing liquid drawn from the first nozzle block 150 increases as the pressure in the rear space SP decreases. This is considered to enable the thickness of the film of processing liquid formed on the substrate W to be increased.

[0093] Therefore, the inventors performed a simulation of the coating process of the substrate W using the coating apparatuses of the first and second embodiments to confirm whether the thickness of the film of processing liquid formed on the substrate W changes depending on the target pressure of the rear space SP.

[0094] Specifically, the inventors designated a coating apparatus having the same configuration as the coating apparatus 100 according to the first embodiment as the coating apparatus of the first example. The inventors also designated a coating apparatus having the same configuration as the coating apparatus 100 according to the second embodiment as the coating apparatus of the second example. Then, the inventors simulated the thicknesses of the film of the processing liquid formed on the substrate W corresponding to each of a plurality of target pressures for the coating apparatus of the first example. The inventors also simulated the thicknesses of the film of the processing liquid formed on the substrate W corresponding to each of a plurality of target pressures for the coating apparatus of the second example.

[0095] 12 is a diagram showing the simulation results of the coating process of the substrate W using the coating apparatuses of the first and second embodiments. In FIG. 12, the simulation results of the coating process using the coating apparatuses of the first and second embodiments are shown in a graph. In the graph of FIG. 12, the vertical axis represents the thickness of the film of processing liquid formed on the substrate W, and the horizontal axis represents the target pressure of the rear space SP. In addition, in the graph of FIG. 12, the dotted line and white square marks represent the simulation results corresponding to the first embodiment, and the solid line and white circle marks represent the simulation results corresponding to the second embodiment.

[0096] 12, in the simulation results corresponding to the first embodiment, the thickness of the film of the processing liquid formed on the substrate W gradually increases from about 5 μm to about 7 μm as the target pressure increases from 0 Pa to −400 Pa. In addition, in the simulation results corresponding to the second embodiment, the thickness of the film of the processing liquid formed on the substrate W gradually increases from about 7.5 μm to about 11 μm as the target pressure increases from 0 Pa to −400 Pa.

[0097] As a result, it was confirmed that the thickness of the film of the processing liquid formed on the substrate W increases as the set value of the target pressure decreases. Therefore, in the coating apparatus 100 of Figures 1 and 8, the thickness of the film of the processing liquid formed on the substrate W can be easily adjusted by changing the value of the target pressure. In this case, by providing each coating apparatus 100 with a device for measuring the film thickness of the processing liquid, feedback control for changing the target pressure based on the measurement results becomes possible.

[0098] 4. Other embodiments (a) In the substrate processing apparatus 1 according to the first and second embodiments, the first nozzle block 150 and the intake guide block 160 are connected to each other, but the present invention is not limited to this.

[0099] The first nozzle block 150 and the intake guide block 160 may be configured as a single member, or the first nozzle block 150 and the intake guide block 160 may be supported by two nozzle supports 140 while being separated from each other.

[0100] (b) In the substrate processing apparatus 1 according to the second embodiment, an intake guide block 160 may be attached to the second nozzle block 250. In this case, by adjusting the pressure in the space facing the rear inclined surface 21c of the second nozzle block 250, the amount of processing liquid drawn out from the second nozzle block 250 onto the substrate W can be increased. Therefore, the thickness of the processing liquid film formed on the substrate W can be further increased.

[0101] (c) In the substrate processing apparatus 1 according to the second embodiment, the second nozzle block 250 is provided so as to be spaced apart from the first nozzle block 150 in the X direction, but the present invention is not limited to this. The second nozzle block 250 may be connected to the front of the first nozzle block 150.

[0102] (d) In the substrate processing apparatus 1 according to the first and second embodiments, the substrate facing surface 21a of the intake guide block 160 is at the same height as the substrate facing surface 11a of the first nozzle block 150, but the present invention is not limited to this. The height position of the substrate facing surface 21a of the intake guide block 160 may be different from the height position of the substrate facing surface 11a of the first nozzle block 150. In this case, the height position of the substrate facing surface 21a needs to be set so that it does not come into contact with the film of processing liquid formed on the substrate W.

[0103] (e) In the substrate processing apparatus 1 according to the first and second embodiments, the first nozzle block 150 has the rear inclined surface 11c, but the present invention is not limited to this. The first nozzle block 150 does not have to have the rear inclined surface 11c. For example, the first nozzle block 150 may be formed so that the lower end of the rear surface 14 of the first nozzle block 150 is connected to the rear end of the substrate facing surface 11a when viewed in the Y direction. In this case, the space facing the vicinity of the lower end of the rear surface 14 becomes the rear space SP.

[0104] (f) In the substrate processing apparatus 1 according to the first and second embodiments, the intake guide block 160 has the front inclined surface 21b, but the present invention is not limited to this. The intake guide block 160 may have a vertical surface extending upward from the front end of the substrate-facing surface 21a, instead of the front inclined surface 21b. In this case, the intake port 25a is formed in the vertical surface.

[0105] (g) In the substrate processing apparatus 1 according to the first and second embodiments, the intake guide block 160 has slit-shaped intake ports 25a and intake paths 25b for sucking the atmosphere in the rear space SP, but the present invention is not limited to this. The intake guide block 160 may have multiple linear intake paths communicating with multiple portions of the rear space SP and multiple intake ports corresponding to the multiple intake paths, respectively. In this case, the atmosphere in multiple portions of the rear space SP can be sucked into the liquid adjustment intake system 180 through the multiple intake ports and multiple intake paths.

[0106] (h) In the substrate processing apparatus 1 according to the first and second embodiments, the substrate W to be subjected to the coating process has a circular shape except for the portion where the notch is formed, but the present invention is not limited to this. The substrate W to be subjected to the coating process is not limited to a circular shape, and may also have a rectangular shape.

[0107] (i) In the coating apparatus 100 according to the first and second embodiments, a film of processing liquid is formed on the substrate W by moving the first nozzle block 150 back and forth relative to the substrate W on the fixed suction chuck 132, but the present invention is not limited to this.

[0108] The coating apparatus 100 may be configured such that the suction chuck 132 is movable in the forward and backward directions. In this case, the suction chuck 132 may move in the forward and backward directions relative to the fixed first nozzle block 150, thereby forming a film of the processing liquid on the substrate W held by suction on the suction chuck 132. Alternatively, the first nozzle block 150 may move forward (or backward) while the suction chuck 132 moves backward (or forward), thereby forming a film of the processing liquid on the substrate W.

[0109] (j) In the substrate processing apparatus 1 according to the second embodiment, an additional nozzle block having the same configuration as the second nozzle block 250 may be provided in front of the second nozzle block 250. In this case, the film of the processing liquid formed on the substrate W can be made even larger.

[0110] (k) In the substrate processing apparatus 1 according to the second embodiment, the coating apparatus 100 may be configured such that the first nozzle block 150 and the second nozzle block 250 are supported movably and independently by two different sets of nozzle supports. In this case, the coating process of the substrate W by the second nozzle block 250 and the coating process of the substrate W by the first nozzle block 150 can be performed independently.

[0111] 5. Correspondence between each element of the claims and each part of the embodiment Below, examples of correspondence between each element of the claims and each element of the embodiments will be described, but the present invention is not limited to the following examples. Various other elements having the configuration or function described in the claims can also be used as each element of the claims.

[0112] In the above embodiment, the substrate processing apparatus 1 is an example of a substrate processing apparatus, the suction chuck 132 is an example of a substrate holding unit, the Y direction is an example of a first direction, the outlet 15a is an example of a first outlet, the substrate facing surface 11a is an example of a first substrate facing surface, the first nozzle block 150 is an example of a first nozzle, and the two nozzle supports 140, the X-direction drive unit 141 and the Z-direction drive unit 142 are examples of relative movement units.

[0113] Furthermore, the gap between the first nozzle block 150 and the substrate W during coating processing of the substrate W is an example of a first gap, the direction in the X direction from the rear to the front of the coating device 100 is an example of a second direction, the control unit 110 is an example of a control unit, the liquid adjustment intake system 180 is an example of a pressure adjustment unit, the rear inclined surface 11c is an example of a first rear end surface, and the rear space SP is an example of a first rear space.

[0114] Furthermore, the outlet 35a is an example of a second outlet, the substrate facing surface 31a is an example of a second substrate facing surface, the second nozzle block 250 is an example of a second nozzle, the gap between the second nozzle block 250 and the substrate W during coating processing of the substrate W is an example of a second gap, the rear inclined surface 31c is an example of a second rear end surface, and the space opposite the rear inclined surface 31c is an example of a second rear space.

[0115] Furthermore, pressure sensor 159 is an example of a pressure detection unit, intake device 182 is an example of an intake device, intake guide block 160 is an example of an intake guide, the lower end of intake guide block 160 and its surrounding area are examples of a space partition unit, and intake port 25a is an example of an intake port.

[0116] 6. Summary of the embodiment (Item 1) The substrate processing apparatus according to item 1 comprises: a substrate holder for holding a substrate; a first nozzle having a first substrate-facing surface formed with a slit-shaped first discharge port extending in a first direction parallel to the substrate held by the substrate holding part, the first nozzle discharging a processing liquid from the first discharge port; a relative movement unit configured to support the substrate holding unit and the first nozzle, respectively, and to be capable of moving at least one of the substrate holding unit and the first nozzle; a control unit that performs first relative movement control to control the relative movement unit so that a first gap is formed between an upper surface of the substrate and the first substrate-facing surface of the first nozzle, and the first nozzle moves through a space above the substrate in a second direction that is parallel to the substrate and intersects with the first direction while a processing liquid is drawn from the first discharge port onto the substrate by capillary action occurring in the first gap; a pressure adjusting unit, the first nozzle has a first rear end surface extending upward or obliquely upward from a rear end of the first substrate-facing surface in the second direction; The pressure adjusting unit adjusts the pressure in a first rear space that faces the first rear end surface of the first nozzle so that the pressure is lower than the pressure in other spaces.

[0117] In the substrate processing apparatus, during the first relative movement control, the processing liquid is supplied from the first nozzle to the upper surface of the substrate by capillary action occurring in the first gap, forming a film of the processing liquid. Furthermore, the pressure adjustment unit lowers the pressure in the first rear space compared to the pressure in the other spaces. In this case, a suction force that draws the processing liquid into the first rear space is generated. As a result, during the first relative movement control, the processing liquid present in the first gap is sucked into the first rear space. Therefore, compared to when the processing liquid is supplied to the upper surface of the substrate by only the capillary force occurring in the first gap, the amount of processing liquid drawn from the first nozzle onto the substrate is increased.

[0118] As a result, it is possible to increase the thickness of the film of the processing liquid formed on the substrate.

[0119] (Item 2) In the substrate processing apparatus according to item 1, The substrate processing apparatus includes: a second nozzle having a second substrate-facing surface formed with a slit-shaped second discharge port extending in a first direction parallel to the substrate held by the substrate holding unit, the second nozzle discharging the processing liquid from the second discharge port; the relative movement unit is configured to further support the second nozzle and to be able to move at least one of the substrate holding unit and the second nozzle; The control unit may further perform second relative movement control to control the relative movement unit so that a second gap is formed between the upper surface of the substrate and the second substrate-facing surface of the second nozzle, and the second nozzle moves in the second direction while the processing liquid is drawn from the second outlet onto the substrate by capillary action occurring in the second gap.

[0120] In this case, during the second relative movement control, the processing liquid is supplied from the second nozzle to the upper surface of the substrate by capillary action occurring in the second gap, and a film of the processing liquid is formed. By performing the first relative movement control and the second relative movement control, a film of the processing liquid is formed on the upper surface of the substrate in layers each time the nozzle passes.

[0121] As a result, it is possible to form a thicker film of the processing liquid on the substrate.

[0122] (Item 3) In the substrate processing apparatus according to item 2, The relative moving portion may integrally support the first nozzle and the second nozzle.

[0123] In this case, by shortening the distance between the first nozzle and the second nozzle in the second direction, the first relative movement control and the second relative movement control can be performed simultaneously or almost simultaneously, thereby shortening the time required for the first relative movement control and the second relative movement control.

[0124] (Item 4) In the substrate processing apparatus according to item 3, the second nozzle and the first nozzle are integrally supported so as to be aligned in this order from front to rear in the second direction, The control unit may perform the first relative movement control and the second relative movement control so that the processing liquid is ejected from the first nozzle onto the upper surface of the substrate after a film of the processing liquid has been formed by the second nozzle.

[0125] In this case, since the second nozzle is positioned further forward than the first nozzle in the second direction, the pressure in the space around the second nozzle is less affected by the pressure adjustment in the first rear space, thereby suppressing variations in the thickness of the treatment liquid film formed on the upper surface of the substrate.

[0126] (Item 5) In the substrate processing apparatus according to item 4, the second nozzle has a second rear end surface extending upward or obliquely upward from a rear end of the second substrate-facing surface in the second direction, The pressure adjusting section may not adjust the pressure in a second rear space that faces the second rear end surface of the second nozzle.

[0127] In this case, even when the second rear space is close to the first nozzle, the pressure in the second rear space is not adjusted. This prevents the amount of processing liquid ejected onto the substrate from the first nozzle from being disturbed by changes in the pressure in the second rear space. As a result, large variations in the thickness of the processing liquid film are suppressed.

[0128] (Item 6) In the substrate processing apparatus according to any one of Items 1 to 5, The substrate processing apparatus includes: Further, a pressure detection unit that detects the pressure in the first rear space is provided. the pressure adjusting unit includes an intake device that draws in the atmosphere of the first rear space, The control unit may control the operation of the intake device based on the detection result of the pressure detection unit so that the pressure in the first rear space is maintained at a predetermined pressure.

[0129] In this case, the pressure in the first rear space is maintained at a predetermined pressure, thereby suppressing large fluctuations in the pressure in the first rear space during the first relative movement control, thereby suppressing fluctuations in the thickness of the treatment liquid film formed on the substrate.

[0130] (Item 7) In the substrate processing apparatus according to item 6, The substrate processing apparatus includes: an intake guide provided in the first nozzle and configured to guide the atmosphere in the first rear space to the intake device; the intake guide has a space partitioning portion provided at a position rearward of the first rear end surface in the second direction so as to partition the first rear space from a space further rearward than the first rear space, The space partition may be formed with an air intake port for drawing in the atmosphere in the first rear space.

[0131] In this case, the space dividing portion of the intake guide divides the first rear space from the space behind the first rear space. This allows the atmosphere in the first rear space to be efficiently sucked in through the intake port of the space dividing portion. Also, the pressure in the first rear space can be easily adjusted.

[0132] (Item 8) In the substrate processing apparatus according to item 7, The intake port may be formed as a slit extending in the first direction. In this case, the atmosphere in the first rear space can be uniformly sucked in in the first direction. This prevents large variations in pressure in multiple parts of the first rear space.

[0133] The substrate processing apparatus according to the above embodiment reduces wasteful consumption of the processing liquid compared to spin coating, eliminating the need to generate a large amount of the processing liquid, thereby contributing to reducing pollution of the global environment caused by the processing liquid. [Explanation of symbols]

[0134] 1...substrate processing apparatus, 11a, 21a, 31a...substrate facing surface, 11b, 21b, 31b...front inclined surface, 11c, 21c, 31c...rear inclined surface, 12, 22, 32...upper end surface, 13, 23, 33...front surface, 14, 24, 34...rear surface, 15a, 35a...discharge port, 15b, 35b...discharge liquid flow path, 15c, 35c...storage section, 25a...air intake port, 25b...air intake path, 29...through hole, 100...coating device, 110...control section, 111...nozzle movement control section, 112...discharge control section, 113...stage control section, 114...air intake control section, 115...condition setting section, 120...stage support, 121...guide rail, 130...stage Stage device, 131...plate member, 132...suction chuck, 133...support pin, 134...pin lifting drive unit, 135...suction drive unit, 140...nozzle support, 141...X-direction drive unit, 142...Z-direction drive unit, 150...first nozzle block, 159...pressure sensor, 160...suction guide block, 170...processing liquid supply system, 171, 181...piping, 172...liquid supply device, 180...liquid adjustment suction system, 182...suction device, 190...operation unit, 250...second nozzle block, G11...discharge width, G21...suction width, SP...rear space, VS1, VS2...imaginary surface, W...substrate, ta...one end, tb...other end

Claims

1. a substrate holder for holding a substrate; a first nozzle having a first substrate-facing surface formed with a slit-shaped first discharge port extending in a first direction parallel to the substrate held by the substrate holding part, the first nozzle discharging a processing liquid from the first discharge port; a relative movement unit configured to support the substrate holding unit and the first nozzle, respectively, and to be capable of moving at least one of the substrate holding unit and the first nozzle; a control unit that performs first relative movement control to control the relative movement unit so that a first gap is formed between an upper surface of the substrate and the first substrate-facing surface of the first nozzle, and the first nozzle moves through a space above the substrate in a second direction that is parallel to the substrate and intersects with the first direction while a processing liquid is drawn from the first discharge port onto the substrate by capillary action occurring in the first gap; a pressure adjusting unit, the first nozzle has a first rear end surface extending upward or obliquely upward from a rear end of the first substrate-facing surface in the second direction; The pressure adjusting unit adjusts the pressure in a first rear space opposed to the first rear end surface of the first nozzle so that the pressure is lower than the pressure in other spaces.

2. a second nozzle having a second substrate-facing surface formed with a slit-shaped second discharge port extending in a first direction parallel to the substrate held by the substrate holding part, the second nozzle discharging the processing liquid from the second discharge port; the relative moving unit is configured to further support the second nozzle and to be able to move at least one of the substrate holding unit and the second nozzle; 2. The substrate processing apparatus of claim 1, wherein the control unit further performs second relative movement control to control the relative movement unit so that a second gap is formed between the upper surface of the substrate and the second substrate-facing surface of the second nozzle, and the second nozzle advances in the second direction while processing liquid is drawn from the second outlet onto the substrate by capillary action occurring in the second gap.

3. The substrate processing apparatus according to claim 2 , wherein the relative moving part integrally supports the first nozzle and the second nozzle.

4. the second nozzle and the first nozzle are integrally supported so as to be aligned in this order from front to rear in the second direction, 4. The substrate processing apparatus according to claim 3, wherein the control unit performs the first relative movement control and the second relative movement control so that processing liquid is ejected from the first nozzle onto the upper surface of the substrate after a film of processing liquid has been formed by the second nozzle.

5. the second nozzle has a second rear end surface extending upward or obliquely upward from a rear end of the second substrate-facing surface in the second direction, The substrate processing apparatus according to claim 4 , wherein the pressure adjusting unit does not adjust the pressure in a second rear space that faces the second rear end surface of the second nozzle.

6. a pressure detection unit that detects the pressure in the first rear space; the pressure adjusting unit includes an intake device that draws in the atmosphere of the first rear space, The substrate processing apparatus according to any one of claims 1 to 5, wherein the control unit controls the operation of the intake device based on the detection result of the pressure detection unit so that the pressure in the first rear space is maintained at a predetermined pressure.

7. an intake guide provided in the first nozzle and configured to guide the atmosphere in the first rear space to the intake device; the intake guide has a space partitioning portion provided at a position rearward of the first rear end surface in the second direction so as to partition the first rear space from a space further rearward than the first rear space, The substrate processing apparatus according to claim 6 , wherein the space partition is formed with an intake port for sucking in the atmosphere in the first rear space.

8. The substrate processing apparatus according to claim 7 , wherein the intake port is formed in a slit shape extending in the first direction.

Images